CN101075554A - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
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- CN101075554A CN101075554A CNA200710104155XA CN200710104155A CN101075554A CN 101075554 A CN101075554 A CN 101075554A CN A200710104155X A CNA200710104155X A CN A200710104155XA CN 200710104155 A CN200710104155 A CN 200710104155A CN 101075554 A CN101075554 A CN 101075554A
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- semiconductor substrate
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP139693/06 | 2006-05-19 | ||
JP2006139693A JP4812512B2 (ja) | 2006-05-19 | 2006-05-19 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101075554A true CN101075554A (zh) | 2007-11-21 |
CN101075554B CN101075554B (zh) | 2010-06-16 |
Family
ID=38420530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710104155XA Expired - Fee Related CN101075554B (zh) | 2006-05-19 | 2007-05-21 | 半导体装置的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8669183B2 (zh) |
EP (1) | EP1858063A3 (zh) |
JP (1) | JP4812512B2 (zh) |
KR (1) | KR100864777B1 (zh) |
CN (1) | CN101075554B (zh) |
TW (1) | TWI365508B (zh) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101459066B (zh) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 栅极、浅沟槽隔离区形成方法及硅基材刻蚀表面的平坦化方法 |
CN102036907A (zh) * | 2008-05-23 | 2011-04-27 | 罗伯特.博世有限公司 | 用于制造分离地设置在硅基底上的微机械结构部件的方法和由此制造的结构部件 |
CN102130045A (zh) * | 2010-12-31 | 2011-07-20 | 上海集成电路研发中心有限公司 | 通孔加工方法 |
CN102315157A (zh) * | 2010-08-11 | 2012-01-11 | 上海集成电路研发中心有限公司 | 一种tsv通孔形成方法和tsv通孔修正方法 |
CN101911257B (zh) * | 2008-01-23 | 2012-03-07 | 日矿金属株式会社 | 在阻挡层上具有钌电镀层的ulsi微细配线构件 |
CN102403217A (zh) * | 2011-11-11 | 2012-04-04 | 华中科技大学 | 一种超薄芯片的制备方法 |
US8173543B2 (en) | 2006-07-27 | 2012-05-08 | Sanyo Semiconductor Co., Ltd. | Method of forming hole in semiconductor device using mask |
CN102610560A (zh) * | 2012-03-21 | 2012-07-25 | 中微半导体设备(上海)有限公司 | 通孔侧壁形貌修饰方法 |
CN102738074A (zh) * | 2012-07-05 | 2012-10-17 | 中微半导体设备(上海)有限公司 | 半导体结构的形成方法 |
CN103050434A (zh) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | 硅通孔的刻蚀方法 |
CN103117203A (zh) * | 2013-03-08 | 2013-05-22 | 中微半导体设备(上海)有限公司 | 一种等离子体刻蚀工艺的处理装置及方法 |
CN103681616A (zh) * | 2012-08-29 | 2014-03-26 | 瑞萨电子株式会社 | 半导体器件及其制造方法 |
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US8132321B2 (en) * | 2008-08-13 | 2012-03-13 | Unimicron Technology Corp. | Method for making embedded circuit structure |
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US8039402B2 (en) | 2007-12-13 | 2011-10-18 | Semiconductor Manufacturing International (Shanghai) Corporation | Methods for forming a gate and a shallow trench isolation region and for planarizating an etched surface of silicon substrate |
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Also Published As
Publication number | Publication date |
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KR20070112059A (ko) | 2007-11-22 |
KR100864777B1 (ko) | 2008-10-22 |
TWI365508B (en) | 2012-06-01 |
US20070281474A1 (en) | 2007-12-06 |
JP2007311584A (ja) | 2007-11-29 |
EP1858063A3 (en) | 2010-04-28 |
US8669183B2 (en) | 2014-03-11 |
JP4812512B2 (ja) | 2011-11-09 |
TW200802713A (en) | 2008-01-01 |
CN101075554B (zh) | 2010-06-16 |
EP1858063A2 (en) | 2007-11-21 |
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