WO2010093062A1 - Dispositif d'électroluminescence organique, et son procédé de production - Google Patents

Dispositif d'électroluminescence organique, et son procédé de production Download PDF

Info

Publication number
WO2010093062A1
WO2010093062A1 PCT/JP2010/052577 JP2010052577W WO2010093062A1 WO 2010093062 A1 WO2010093062 A1 WO 2010093062A1 JP 2010052577 W JP2010052577 W JP 2010052577W WO 2010093062 A1 WO2010093062 A1 WO 2010093062A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
organic
light
light extraction
ligands
Prior art date
Application number
PCT/JP2010/052577
Other languages
English (en)
Inventor
Manabu Tobise
Yoshihisa Usami
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Publication of WO2010093062A1 publication Critical patent/WO2010093062A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present invention relates to an organic electroluminescence device having improved light extraction efficiency and a method for producing the organic electroluminescence device.
  • exterior members such as a transparent lens, a protective film or a glass tube, etc. are formed, and light is emitted outward from surfaces of these exterior members.
  • These exterior members have a refractive index higher than that of air, and when light is outgoing from these exterior members, reflection takes place at the interface. The light reflected at the interface is sometimes unable to leak outward from these exterior members, depending on the angle of light reflection, to be dissipated as heat consequently.
  • organic electroluminescence device otherwise, referred to as “organic EL device”
  • organic EL device The light extraction efficiency of the organic electroluminescence device degrades due to the light reflection at the interface, and the temperature of the organic EL device increases, which undesirably leads to a reduction of life of the organic EL device.
  • Patent Literature 1 discloses a method of forming minute concaves-convexes on a surface (a light emitting surface) of an exterior member, in which a die preliminarily provided with a minute concave-convex configuration on its surface is produced, and the minute concave -convex configuration of the die is formed on a light emitting surface by injection molding or transfer, and a method of grinding the light emitting surface in a random direction by a grinder.
  • the former method however, has drawbacks in that it requires a complicated process for producing a die, hence incurring high cost.
  • the latter method is disadvantageous in improving display performance because it is difficult to constantly produce a uniformly roughened surface.
  • Patent Literature 2 discloses a method in which a line-and-space pattern having a triangular- shaped cross-section is formed in an electric current- diffusion layer, and the electric current-diffusion layer is subjected to hydrochloric acid treatment at high temperature to thereby form irregularities of submicron size, and a method in which a line-and-space pattern is formed using a photo-resist, and minute irregularities are further formed by reactive ion etching (RIE).
  • RIE reactive ion etching
  • Patent Literature 3 discloses a method of forming concave portions by irradiating light to a heat mode recording material layer which is deformable. The method however has a problem in that an organic layer in the organic EL element degrades by the irradiation of light.
  • an object of the present invention is to provide an organic electroluminescence device capable of improving the light extraction efficiency and preventing an organic layer in an organic EL element from degrading, and a method for producing the organic electroluminescence device.
  • ⁇ 1 > A method for producing an organic electroluminescence device, including : forming an organic electroluminescence element which includes a pair of electrodes, and an organic layer disposed between the pair of electrodes, forming, on the organic electroluminescence element, a protective layer which shields 40% or more of exposure light having a predetermined wavelength, forming, on the protective layer, a light extraction layer for extracting light emitted from the organic layer, and forming, on the light extraction layer, a plurality of concave portions by irradiating the light extraction layer with the exposure light having a predetermined wavelength.
  • An organic electroluminescence device including: an organic electroluminescence element which includes a pair of electrodes, and an organic layer disposed between the pair of electrodes, a protective layer which is disposed on the organic electroluminescence element and shields 40% or more of exposure light having a predetermined wavelength, and a light extraction layer for extracting light emitted from the organic layer, the light extraction layer being disposed on the protective layer and deformable by being irradiated with the exposure light having a predetermined wavelength.
  • ⁇ 4 > The organic electroluminescence device according to ⁇ 3 >, wherein the protective layer transmits 80% or more of the light emitted from the organic layer.
  • ⁇ 5 > The organic electroluminescence device according to one of ⁇ 3 > and ⁇ 4 >, wherein the protective layer includes an inorganic material layer.
  • ⁇ 6 > The organic electroluminescence device according to ⁇ 5 >, wherein the inorganic material layer is at least one of a SiON layer and a SiN layer.
  • ⁇ 7 > The organic electroluminescence device according to one of ⁇ 5 > and ⁇ 6 >, wherein the protective layer further includes an organic material layer.
  • ⁇ 8 > The organic electroluminescence device according to one of ⁇ 3 > and ⁇ 4 >, wherein the protective layer is a dielectric multilayer film.
  • an organic electroluminescence device capable of improving the light extraction efficiency and preventing an organic layer in an organic EL element from degrading, and a method for producing the organic electroluminescence device.
  • FIG. IA is a plan view illustrating one example of a light extraction layer in an organic EL device according to the present invention.
  • FIG. IB is a plan view illustrating another example of a light extraction layer in an organic EL device according to the present invention.
  • FIG. 2A is a view illustrating a relationship between a diameter of concave portions in a light extraction layer and a pitch of the concave portions.
  • FIG. 2B is a view illustrating a relationship between a light emission time period of a laser light beam and one frame cycle.
  • FIG. 3A is a view illustrating one example of a forming step for a light extraction layer and concave portions in a production method of an organic EL device according to the present invention (first step).
  • FIG. 3B is a view illustrating one example of a forming step for a light extraction layer and concave portions in a production method of an organic EL device according to the present invention (second step).
  • FIG. 3C is a view illustrating one example of a forming step for a light extraction layer and concave portions in a production method of an organic EL device according to the present invention (third step).
  • FIG. 4 is an illustration of an organic EL device produced in Example 1.
  • FIG. 5 is an illustration of an organic EL device produced in Example 2.
  • FIG. 6 is an illustration of an organic EL device produced in Example 3.
  • FIG. 7 is an illustration of an organic EL device produced in Example 4.
  • FIG. 8 is a graph illustrating a light transmittance (%) of a protective layer (SiON layer) in the organic EL device produced in Example 1.
  • FIG. 9 is a graph illustrating a light transmittance (%) of a protective layer (SiN layer/SiON layer/SiN layer) in the organic EL device produced in Example 2.
  • FIG. 10 is a graph illustrating a light transmittance (%) of a protective layer (AIq layer/SiN layer) in the organic EL device produced in Example 3.
  • FIG. 11 is a graph illustrating a light transmittance (%) of a dielectric multilayered film of an organic EL device produced in Example 4.
  • FIG. 12 is an illustration of an organic EL device produced in Comparative Example 1.
  • An organic electroluminescence device includes at least an organic electroluminescence element (otherwise referred to as "organic EL element", a protective layer, and a light extraction layer, and further includes other members as required.
  • organic electroluminescence element otherwise referred to as "organic EL element”
  • a protective layer a protective layer
  • a light extraction layer a light extraction layer
  • the organic electroluminescence element includes a pair of electrodes
  • At least one of the anode and the cathode is preferably transparent.
  • a configuration of the laminated organic layer an aspect is preferable in which a hole transporting layer, an organic light emitting layer, and an electron transporting layer are stacked in this order as viewed from the anode side.
  • the laminated organic layer further includes a hole injection layer between the hole transporting layer and the anode, and/or an electron transporting intermediate layer between the organic light emitting layer and the electron transporting layer.
  • a hole transporting intermediate layer may be provided between the organic light emitting layer and the hole transporting layer.
  • an electron injection layer may be provided between the cathode and the electron transporting layer.
  • each of these layers may have a plurality of secondary layers. « Anode »
  • the anode is generally sufficient to have the function of an electrode to supply holes to the organic layer.
  • the shape, structure, and size of the anode are not particularly limited, and these may be arbitrarily selected from known materials of electrode in accordance with the intended use and purpose of the light emitting element. As described above, the anode is provided as the transparent anode.
  • Preferred examples of the material of the anode include metals, alloys, electrically conductive compounds and mixtures of these materials.
  • Specific examples of the material of the anode include tin oxides doped with antimony, fluorine, etc. (ATO, FTO); electrically conductive metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); metals such as gold, silver, chromium, and nickel, mixtures and laminates of these metals with electrically conductive metal oxides; inorganic electrically conductive materials such as copper iodide, and copper sulfide," organic electrically conductive materials such as polyaniline, polythiophene, and polypyrrole, and laminates of these organic electrically conductive materials with ITO, etc.
  • ITO inorganic electrically conductive materials
  • ITO is especially preferred from the viewpoint of productivity, high-conductivity, transparency and the like.
  • the anode can be formed on the substrate by a method arbitrarily selected from among wet-process methods such as a printing method, and a coating method; physical methods such as a vacuum vapor deposition method, a sputtering method, and an ion-plating method; and chemical methods such as a CVD method, and a plasma CVD method, taking the suitability with the material constituting the anode into consideration.
  • wet-process methods such as a printing method, and a coating method
  • physical methods such as a vacuum vapor deposition method, a sputtering method, and an ion-plating method
  • chemical methods such as a CVD method, and a plasma CVD method, taking the suitability with the material constituting the anode into consideration.
  • ITO is selected as the material of the anode
  • the anode can be formed according to a direct current or high-frequency sputtering method, a vacuum vapor deposition method, an ion-plating method, etc.
  • the position of the anode to be formed is not particularly limited, and the anode can be formed anywhere in accordance with the intended use and purpose of the light emitting element.
  • the anode is however preferably formed on the substrate. In this case, the anode may be formed on the entire surface of one side of the substrate or may be formed at a part of the substrate.
  • patterning of the anode may be carried out by chemical etching such as photo-lithography, may be carried out by physical etching with use of a laser, etc., may be carried out by vacuum vapor deposition or sputtering on a superposed mask, or a lift-off method or a printing method may be used.
  • the thickness of the anode can be optionally selected depending on the material constituting the anode, and cannot be unequivocally defined.
  • the value of resistance of the anode is preferably 10 3 ⁇ /square or lower, more preferably 10 2 ⁇ /square or lower.
  • the transmittance of the anode is preferably 60% or higher, more preferably 70% or higher.
  • the cathode is generally sufficient to have the function as an electrode to inject electrons to the organic layer.
  • the shape, structure and size of the cathode are not particularly limited, and these can be arbitrarily selected from known materials of electrode in accordance with the intended use and purpose of the light emitting element.
  • Preferred examples of the material constituting the cathode include metals, alloys, metal oxides, electrically conductive compounds and mixtures of these materials.
  • Specific examples of the material of the cathode include alkali metals (e.g. Li, Na, K, Cs, etc.), alkaline earth metals (e.g. Mg, Ca, etc.), and rare earth metals such as gold, silver, lead, aluminum, sodium-potassium alloy, lithium- aluminum alloy, magnesium- silver alloy, indium, and ytterbium. These materials may be used alone, however, from the viewpoint of simultaneous achievement of stability and electron injection property, two or more materials can be preferably used in combination.
  • alkali metals and alkaline earth metals are preferred in terms of the electron injecting property, and materials mainly containing aluminum are preferred for their excellent storage stability.
  • the materials mainly containing aluminum mean aluminum alone, alloys of aluminum with 0.01% by mass to 10% by mass of alkali metal or alkaline earth metal, or mixtures of these (e.g., lithium -aluminum alloy, magnesium-aluminum alloy, etc.).
  • the materials of the cathode are disclosed in detail in Japanese Patent
  • JP-A Application Laid-Open (JP-A) Nos. 2-15595, and 5-121172, and the materials described therein can also be used in the present invention.
  • the cathode can be formed by known methods with no particular limitation.
  • the cathode can be formed according to a method arbitrarily selected from among wet-process methods such as a printing method, and a coating method; physical methods such as a vacuum vapor deposition method, a sputtering method, and an ion-plating method; and chemical methods such as a CVD method, and a plasma CVD method, taking the suitability with the material constituting the cathode in consideration.
  • the cathode can be formed with one or two or more kinds of the materials at the same time or in order by a sputtering method, etc.
  • patterning of the cathode may be carried out by chemical etching such as photo-lithography, may be carried out by physical etching with use of a laser, etc., may be carried out by vacuum vapor deposition or sputtering on a superposed mask, or a lift-off method or a printing method may be used.
  • the position of the cathode to be formed is not especially limited and the cathode can be formed anywhere in the present invention.
  • the cathode may be formed on the entire surface of the organic layer, or may be formed at a part thereof.
  • a dielectric layer composed of fluoride or oxide of alkali metal or alkaline earth metal may be inserted between the cathode and the organic layer in a thickness of from 0.1 nm to 5 nm.
  • the dielectric layer can be regarded as a kind of an electron-injecting layer.
  • the dielectric layer can be formed by, for example, a vacuum deposition method, a sputtering method, an ion plating method, etc.
  • the thickness of the cathode can be arbitrarily selected depending on the material constituting the cathode, and cannot be unequivocally defined. However, it is usually about 10 nm to about 5 ⁇ m, and preferably 50 nm to 1 ⁇ m.
  • the cathode may be transparent or opaque.
  • the transparent cathode can be formed by forming a film of the material of the cathode in a thickness of 1 nm to 10 nm, and further laminating a transparent conductive material such as ITO and IZO thereon.
  • the organic EL element has at least one organic layer including an organic light emitting layer.
  • each layer constituting the organic layer(s) can be suitably formed by any of a dry film-forming method such as a vapor deposition method, and a sputtering method; a wet-process coating method, a transfer method, a printing method, and an inkjet method.
  • the light emitting layer is a layer having functions to receive, at the time of electric field application, holes from the anode, hole injecting layer or hole transporting layer, and to receive electrons from the cathode, electron injection layer or electron transporting layer, and offer the field of recombination of holes and electrons to emit light.
  • the organic light emitting layer may be composed of luminescent materials alone or may be composed of a mixed layer containing a host material and a luminescent dopant.
  • the luminescent dopant may be a fluorescent luminescent material or a phosphorescent luminescent material, or may be two or more kinds thereof.
  • the host material is preferably a charge transporting material.
  • the host material may be one or two or more kinds thereof, and for example, it may be a mixed layer composed of an electron-transporting host material with a hole-transporting host material.
  • the organic light emitting layer may further contain a no-light emitting material having no charge transportability.
  • the organic light emitting layer may be a single layer or may be composed of two or more layers, and each layer may emit light in different luminescent color.
  • both of a phosphorescent luminescent material and a fluorescent luminescent material can be used as the dopant (phosphorescent luminescent dopant, fluorescent luminescent dopant).
  • the organic light emitting layer may contain two or more kinds of luminescent dopants for improving the color purity and for expanding a light-emitting wavelength range.
  • the luminescent dopant is preferably, in reference to a difference in ionization potential ( ⁇ Ip) with respect to the host compound and a difference in electron affinity ( ⁇ Ea) with respect to the host compound, a dopant which further satisfies relationships of 1.2eV > ⁇ Ip > 0.2eV, and/or 1.2eV > ⁇ Ea > 0.2eV, from the viewpoint of driving durability.
  • the phosphorescent luminescent dopant is not particularly limited and may be suitably selected in accordance with the intended use.
  • complexes containing a transition metal atom or a lanthanoid atom are exemplified.
  • the transition metal atom is not particularly limited and may be suitably selected in accordance with the intended use, however, preferred transition metals are ruthenium, rhodium, palladium, tungsten, rhenium, osmium, iridium, gold, silver, copper, and platinum; more preferred are rhenium, iridium, and platinum, with particular preference being given to iridium, and platinum.
  • the lanthanoid atom is not particularly limited and may be suitably selected in accordance with the intended use.
  • Examples thereof include lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.
  • preferred are neodymium, europium, and gadolinium.
  • the ligands include halogen ligands (preferably chlorine ligands); aromatic carbon ring ligands (e.g., cyclopentadienyl anions, benzene anions, or naphthyl anions and the like, these ligands preferably have 5 to 30 carbon atoms, more preferably have 6 to 30 carbon atoms, still more preferably 6 to 20 carbon atoms, particularly preferably have 6 to 12 carbon atoms); nitrogen- containing heterocyclic ligands (e.g., phenylpyridine, benzoquinoline, quinolinol, bipyridyl, phenanthroline and the like, these ligands preferably have 5 to 30 carbon atoms, more preferably have 6 to 30 carbon atoms, still more preferably have 6 to 20 carbon atoms, particularly preferably have 6 to 12 carbon atoms); diketone ligands (e.g., acetylacetone and the like), carboxylic acid
  • the complexes may have one transition metal atom in the compound or may have two or more transition metal atoms, that is, may be a so-called dinuclear complex.
  • the complexes may concurrently contain different two or more kinds of metal atoms.
  • phosphorescent luminescent compounds described in US 6303238B1, US 6097147, WO00/57676, WOOO/70655, WO01/08230, WO01/39234A2, WO01/41512A1, WO02/02714A2, WO02/15645A1, WO02/44189A1, WO05/19373A2, Japanese Patent Application LaidOpen (JP-A) Nos. 2001-247859, 2002-302671, 2002-117978, 2003-133074, 2002-235076, 2003-123982, 2002-170684, EP 1211257, Japanese Patent Application Laid-Open (JP-A) Nos.
  • Ir complexes preferred are Ir complexes, Pt complexes, Cu complexes, Re complexes, W complexes, Rh complexes, Ru complexes, Pd complexes, Os complexes, Eu complexes, Tb complexes, Gd complexes, Dy complexes, and Ce complexes; and more preferred are Ir complexes, Pt complexes, and Re complexes.
  • Ir complexes, Pt complexes, and Re complexes each having at least one ligand forming a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, or a metal-sulfur bond.
  • Ir complexes, Pt complexes, and Re complexes each including tridentate or higher multidentate ligands.
  • the fluorescent light-emitting dopant is not particularly limited and may be suitably selected in accordance with the intended use.
  • examples thereof include benzoxazole, benzimidazole, benzothiazole, styrylbenzene, polyphenyl, diphenyl butadiene, tetraphenylbutadiene, naphthalimide, coumarin, pyrane, perinone, oxadiazole, aldazine, pyralizine, cyclopentadiene, bis-styryl anthracene, quinacridone, pyrrolopyridine, thiadiazolopyridine, styryl amine, aromatic dimethylidyne compounds, aromatic condensed polycyclic compounds (anthracene, phenanthroline, pyrene, perylene, rubrene, pentacene, etc.), a variety of metal complexes typified by metal complexes of 8-quinolinol, pyr
  • the luminescent dopant in the organic light emitting layer is generally contained in an amount of 0.1% by mass to 50% by mass with respect to the total mass of the compound forming the organic light emitting layer. From the viewpoint of durability and external quantum efficiency, it is however preferably contained in an amount of 1% by mass to 50% by mass, more preferably contained in an amount of 2% by mass to 40% by mass.
  • the thickness of the organic light emitting layer is not particularly limited, but, generally, it is preferably 2 nm to 500 nm. From the viewpoint of external quantum efficiency, it is more preferably 3 nm to 200 nm, particularly preferably 5 nm to 100 nm.
  • hole-transporting host materials (otherwise, may be referred to as “hole transporting hosts”) superior in hole transportability
  • electron-transporting host compounds (otherwise, may be referred to as
  • electron transporting hosts superior in electron transportability can be used.
  • the hole transporting hosts in the organic light emitting layer include the following materials: pyrrole, indole, carbazole, azaindole, azacarbazole, triazole, oxazole, oxadiazole, pyrazole, imidazole, thiophene, polyarylalkane, pyrazoline, pyrazolone, phenylenediamine, arylamine, amino-substituted chalcone, styrylanthracene, fluorenone, hydrazone, stilbene, silazane, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidine compounds, porphyrin compounds, polysilane compounds, poly(N-vinylcarbazole), aniline copolymers, electrically conductive high-molecular oligomers such as thiophene oligomers, polythiophenes and the like, organic silanes, carbon films, derivatives thereof.
  • the hole transporting hosts preferably indole derivatives, carbazole derivatives, aromatic tertiary amine compounds or thiophene derivatives, more preferably compounds having a carbazole group in their molecules, particularly preferably compounds having a t-butyl-substituted carbazole group in their molecules.
  • the electron transporting hosts in the organic light emitting layer preferably have an electron affinity Ea, from the viewpoint of improvement of durability and reduction in driving electric voltage, of 2.5 eV to 3.5 eV, more preferably 2.6 eV to 3.4 eV, particularly preferably 2.8 eV to 3.3 eV, and preferably have an ionization potential Ip, from the viewpoint of improvement of durability and reduction in driving electric voltage, of 5.7 eV to 7.5 eV, more preferably 5.8 eV to 7.0 eV, particularly preferably 5.9 eV to 6.5 eV.
  • Ea electron affinity
  • Ip ionization potential
  • electron transporting hosts include pyridine, pyrimidine, triazine, imidazole, pyrazole, triazole, oxazole, oxadiazole, fluorenone, anthraquinodimethane, anthrone, diphenylquinone, thiopyrandioxide, carbodiimide, fluorenylidenemethane, distyrylpyrazine, fluorine -substituted aromatic compounds, heterocyclic tetraearboxylic anhydrides of naphthalene, perylene or the like, phthalocyanine, derivatives thereof (which may form a condensed ring with another ring), and a variety of metal complexes typified by metal complexes of 8-quinolinol derivatives, metal phthalocyanine, and metal complexes having benzoxazole or benzothiazole as the ligand.
  • Preferred examples of the electron transporting hosts are metal complexes, azole derivatives (benzimidazole derivatives, imidazopyridine derivatives etc.), and azine derivatives (pyridine derivatives, pyrimidine derivatives, triazine derivatives etc.).
  • metal complex compounds more preferred are metal complex compounds, from the viewpoint of durability.
  • a metal complex containing a ligand having at least one nitrogen atom, oxygen atom, or sulfur atom to be coordinated with the metal is more preferable.
  • a metal ion in the metal complex is not particularly limited, a beryllium ion, a magnesium ion, an aluminum ion, a gallium ion, a zinc ion, an indium ion, a tin ion, a platinum ion, or a palladium ion is preferred; more preferred is a beryllium ion, an aluminum ion, a gallium ion, a zinc ion, a platinum ion, or a palladium ion; and further preferred is an aluminum ion, a zinc ion, a platinum ion or a palladium ion.
  • nitrogen-containing heterocyclic ligands preferably having 1 to 30 carbon atoms, more preferably having 2 to 20 carbon atoms, particularly preferably having 3 to 15 carbon atoms.
  • the ligands may be monodentate ligands or bidentate or higher ligands, but are preferably from bidentate ligands to hexadentate ligands, and mixed ligands of a monodentate ligand with a bidentate to hexadentate ligand are also preferable.
  • ligands include azine ligands (e.g. pyridine ligands, bipyridyl ligands, terpyridine ligands, etc.); hydroxyphenylazole ligands (e.g. hydroxyphenylbenzimidazole ligands, hydroxyphenylbenzoxazole ligands, hydroxyphenylimidazole ligands, hydroxyphenylimidazopyridine ligands, etc.); alkoxy ligands (e.g.
  • ligands methoxy, ethoxy, butoxy and 2-ethylhexyloxy ligands, and these ligands preferably have 1 to 30 carbon atoms, more preferably have 1 to 20 carbon atoms, particularly preferably have 1 to 10 carbon atoms); aryloxy ligands (e.g. phenyloxy, 1- naphthyloxy, 2-naphthyloxy, 2,4,6-trimethylphenyloxy, and 4-biphenyloxy ligands, and these ligands preferably have 6 to 30 carbon atoms, more preferably have 6 to 20 carbon atoms, particularly preferably have 6 to 12).
  • aryloxy ligands e.g. phenyloxy, 1- naphthyloxy, 2-naphthyloxy, 2,4,6-trimethylphenyloxy, and 4-biphenyloxy ligands, and these ligands preferably have 6 to 30 carbon atoms, more preferably have
  • heteroaryloxy ligands e.g. pyridyloxy, pyrazyloxy, pyrimidyloxy, quinolyloxy ligands and the like, and those having preferably 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 12 carbon atoms
  • alkylthio ligands e.g. methylthio, ethylthio ligands and the like, and those having preferably 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 12 carbon atoms
  • arylthio ligands e.g.
  • phenylthio ligands and the like and those having preferably 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms, and particularly preferably 6 to 12 carbon atoms); heteroarylthio ligands (e.g. pyridylthio, 2-benzimidazolylthio, 2-benzoxazolylthio, 2-benzothiazolylthio ligands and the like, and those having preferably 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, and particularly preferably 1 to 12 carbon atoms); siloxy ligands (e.g.
  • a triphenylsiloxy group a trie thoxy siloxy group, a triisopropylsiloxy group and the like, and those having preferably 1 to 30 carbon atoms, more preferably 3 to 25 carbon atoms, and particularly preferably 6 to 20 carbon atoms
  • aromatic hydrocarbon anion ligands e.g. a phenyl anion, a naphthyl anion, an anthranyl anion and the like, and those having preferably 6 to 30 carbon atoms, more preferably 6 to 25 carbon atoms, and particularly preferably 6 to 20 carbon atoms
  • aromatic heterocyclic anion ligands e.g.
  • nitrogen-containing heterocyclic ligands, aryloxy ligands, heteroaryloxy groups, siloxy ligands are preferable. Nitrogen-containing aromatic heterocyclic ligands, aryloxy ligands, siloxy ligands, aromatic hydrocarbon anion ligands, and aromatic heterocyclic anion ligands are more preferable.
  • metal complex electron transporting hosts examples include compounds described, for example, in Japanese Patent Application Laid-Open (JP-A) Nos. 2002-235076, 2004-214179, 2004-221062, 2004-221065, 2004-221068, and 2004-327313.
  • the lowest triplet excitation energy (Tl) value in the host materials is preferably higher than the Tl value of the phosphorescent luminescent materials, in view of color purity, external quantum efficiency, and driving durability.
  • the amount of the host compound is not particularly limited, however, it is preferably 2% by mass to 95% by mass with respect to the total mass of the compound forming the light emitting layer, from the viewpoint of the luminescence efficiency and driving voltage.
  • the hole injection layer and the hole transporting layer are layers functioning to receive holes from an anode or from an anode side and to transport the holes to a cathode side.
  • a hole injection material and a hole transporting material for use in these layers may be low-molecular weight compounds or high-molecular weight compounds.
  • the injection layer and the hole transporting layer are preferably layers containing, for example, pyrrole derivatives, carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazolone derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidyne compounds, phthalocyanine compounds, porphyrin compounds, thiophene compounds, organic silane derivatives, carbon, or the like.
  • An electron" accepting dopant may be introduced into the hole injection layer or the hole transport layer in the organic EL element of the present invention.
  • the electron- accepting dopant to be introduced into a hole injection layer or a hole transport layer either or both of an inorganic compound or an organic compound may be used as long as the compound has electron accepting property and a property for oxidizing an organic compound.
  • the inorganic compound include metal halides, such as iron (II) chloride, aluminum chloride, gallium chloride, indium chloride and antimony pentachloride, and metal oxides, such as vanadium pentaoxide, and molybdenum trioxide.
  • metal halides such as iron (II) chloride, aluminum chloride, gallium chloride, indium chloride and antimony pentachloride
  • metal oxides such as vanadium pentaoxide, and molybdenum trioxide.
  • compounds having a substituent such as a nitro group, a halogen, a cyano group, a trifluoromethyl group or the like; qui ⁇ one compounds; acid anhydride compounds! fullerenes; and the like may be preferably applied.
  • JP-A Japanese Patent Application LaidOpen
  • hexacyanobutadiene hexacyanobenzene
  • tetracyanoethylene tetracyanoquinodimethane
  • tetrafluorotetracyanoquinodimethane p-fluoranil
  • p-chloranil p-bromanil
  • p-benzoquinone 2,6-dichlorobenzoquinone
  • 2,5-dichlorobenzoquinone 1,2,4,5 -tetracyanobenzene
  • 1,4-dicyanotetrafluorobenzene 1,4-dicyanotetrafluorobenzene
  • These electron- accepting dopants may be used alone or in a combination. Although an applied amount of these electron- accepting dopants depends on the type of material, 0.01% by mass to 50% by mass is preferred with respect to a hole transporting layer material, 0.05% by mass to 40% by mass is more preferable, and 0.1% by mass to 30% by mass is particularly preferred.
  • the thickness of the hole injection layer and the thickness of the hole transporting layer are each preferably 500 nm or less, from the viewpoint of reducing driving voltage.
  • the thickness of the hole transporting layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, still more preferably 10 nm to 100 nm.
  • the thickness of the hole injection layer is preferably 0.1 nm to 200 nm, more preferably 0.5 nm to 100 nm, still more preferably 1 nm to 100 nm.
  • the hole injection layer and the hole transporting layer may take a single-layer structure containing one or two or more of the above-mentioned materials, or a multilayer structure composed of plural layers of a homogeneous composition or a heterogeneous composition.
  • Electron Injection Layer and Electron Transporting Layer are layers having functions for receiving electrons from a cathode or from a cathode side, and transporting electrons to an anode side.
  • An electron injection material and an electron transporting material for use in these layers may be lowmolecular weight compounds or high- molecular weight compounds.
  • hole injection layer and the hole transporting layer are preferably layers containing, for example, pyridine derivatives, quinoline derivatives, pyrimidine derivatives, pyrazine derivatives, phthalazine derivatives, phenanthroline derivatives, triazine derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, fluorenone derivatives, anthraquinodimethane derivatives, anthrone derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, aromatic cyclic tetracarboxylic anhydrides of perylene, naphthalene or the like, phthalocyanine derivatives, metal complexes typified by metal complexes of 8-quinolinol derivatives, metal phthalocyanine, and metal complexes
  • the electron injection layer or the electron transporting layer in the organic EL element of the present invention may contain an electron donating dopant.
  • the electron donating dopant introduced in the electron injection layer or the electron transporting layer any material may be used as long as it has an electron- donating property and a property for reducing an organic compound, and alkaline metals such as Li, alkaline earth metals such as Mg, transition metals including rare-earth metals, and reducing organic compounds are preferably used.
  • alkaline metals such as Li, alkaline earth metals such as Mg, transition metals including rare-earth metals, and reducing organic compounds are preferably used.
  • metals having a work function of 4.2 eV or less are preferably used, and specific examples thereof include Li, Na, K, Be, Mg, Ca, Sr, Ba, Y, Cs, La, Sm, Gd, Yb, and the like.
  • Specific examples of the reducing organic compounds include nitrogen- containing compounds, sulfur -containing compounds,
  • JP-A Japanese Patent Application Laid-Open Nos. 6-212153, 2000-196140, 2003-68468, 2003-229278, 2004-342614, and the like.
  • electron donating dopants may be used alone or in combination.
  • An applied amount of the electron donating dopants differs dependent on the types of the materials, but it is preferably from 0.1% by mass to 99% by mass with respect to an electron transporting layer material, more preferably from 1.0% by mass to 80% by mass, and particularly preferably from 2.0% by mass to 70% by mass.
  • the thickness of the electron injection layer and the thickness of the electron transporting layer are each preferably 500 nm or less from the viewpoint of reducing driving voltage.
  • the thickness of the electron transporting layer is preferably from 1 nm to 500 nm, more preferably from 5 nm to 200 nm, particularly preferably 10 nm to 100 nm.
  • the thickness of the electron injection layer is preferably from 0.1 nm to 200 nm, more preferably from 0.2 nm to 100 nm, particularly preferably from 0.5 nm to 50 nm.
  • the electron injection layer and the electron transporting layer may take a single layer structure containing one or two or more of the above-mentioned materials, or a multilayer structure composed of plural layers of a homogeneous composition or a heterogeneous composition. ⁇ « Hole Blocking Layer »>
  • the hole blocking layer is a layer having a function to prevent holes transported from the anode side to the light emitting layer from passing through the cathode side.
  • the hole blocking layer can be provided as an organic layer contiguous to the light emitting layer on the cathode side.
  • a compound constituting the hole blocking layer for example, aluminum complexes such as BAIq, triazole derivatives, and phenanthroline derivatives such as BCP are exemplified.
  • the thickness of the hole blocking layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, particularly preferably 10 nm to 100 nm.
  • the hole blocking layer may take a single-layer structure containing one or two or more of the above-mentioned materials, or a multilayer structure composed of plural layers of a homogeneous composition or a heterogeneous composition.
  • the electron blocking layer is a layer having a function to prevent electrons transported from the cathode side to the light emitting layer from passing through the anode side.
  • the electron blocking layer can be provided as an organic layer contiguous to the light emitting layer on the anode side.
  • the electron blocking layer for example, those exemplified as hole transporting materials above can be used.
  • the thickness of the electron blocking layer is preferably 1 nm to 500 nm, more preferably 5 nm to 200 nm, particularly preferably 10 nm to 100 nm.
  • the hole blocking layer may take a single -layer structure containing one or two or more of the above-mentioned materials, or a multilayer structure composed of plural layers of a homogeneous composition or a heterogeneous composition. « Driving »
  • JP-A Japanese Patent Application Laid-Open
  • JP-B Japanese Patent No. 2784615
  • U.S. Patent Nos. 5828429, and 6023308 can be applied to the present invention.
  • the organic EL element of the invention can take a structure in which a charge generating layer is provided between a plurality of light emitting layers for improving luminous efficiency.
  • the charge generating layer has functions of generating charge (holes and electrons) at the time of application of electric field and injecting the generated charge to the layer contiguous to the charge -generating layer.
  • the material for forming the charge generating layer any material can be used so long as it has the above functions, and the charge generating layer may contain a single compound or a plurality of compounds.
  • the material may be a material having conductivity, may be a material having semi-conductivity such as a doped organic layer, or may be a material having an electric insulating property, and examples of the materials include disclosed in Japanese Patent Application Laid-Open (JP-A) Nos. 11-329748, 2003-272860, and 2004-39617.
  • JP-A Japanese Patent Application Laid-Open
  • transparent conductive materials such as ITO and IZO (indium zinc oxide), Fullerenes such as C60, conductive organic materials such as oligothiophene, conductive organic materials such as metallic phthalocyanines, metal-free phthalocyanines, metallic porphyrins, and metal-free porphyrins, metallic materials such as Ca, Ag, Al, Mg : Ag alloy, Al ; Li alloy, and Mg'- ⁇ A alloy, hole -conductive materials, electron-conductive materials, and mixtures of these materials may be used.
  • ITO and IZO indium zinc oxide
  • Fullerenes such as C60
  • conductive organic materials such as oligothiophene
  • conductive organic materials such as metallic phthalocyanines, metal-free phthalocyanines, metallic porphyrins, and metal-free porphyrins
  • metallic materials such as Ca, Ag, Al, Mg : Ag alloy, Al ; Li alloy, and Mg'- ⁇ A alloy, hole -conductive materials, electron-
  • hole -conductive materials for example, materials obtained by doping oxidants having an electron- withdrawing property such as F4-TCNQ,
  • TCNQ FeCl3 to hole-transporting organic materials such as 2-TNATA and NPD, P-type conductive polymers, and P-type semiconductors are exemplified.
  • the electron-conductive materials for example, materials obtained by doping metals or metallic compounds having a work function of less than 4.OeV to electron-transporting organic materials, N-type conductive polymers, and
  • N-type semiconductors are exemplified.
  • N-type Si, N-type CdS, and N-type ZnS are exemplified
  • P-type semiconductors, P-type Si, P-type CdTb 3 and P-type CuO are exemplified.
  • an electrically insulating material such as V2O5 can also be used as the charge-generating layer.
  • the charge generating layer may be a single layer, or a laminate of a plurality of layers.
  • a layer having a structure of the lamination of a material having conductivity such as a transparent conductive material or a metallic material and a hole- conductive material or an electron-conductive material
  • a layer having a structure of the lamination of the hole -conductive material and the electron-conductive material are exemplified.
  • the film thickness and materials of the charge generating layer so that a visible light transmittance is 50% or higher.
  • the film thickness is not particularly limited and may be suitably selected in accordance with the intended use. It is preferably 0.5 nm to 200 nm, more preferably 1 nm 100 nm, still more preferably 3 nm to 50 nm, particularly preferably 5 nm to 30 nm.
  • the forming method of the charge generating layer is not particularly limited, and the forming method of the organic layers can be used.
  • the charge generating layer is formed between each two layers of a plurality of light emitting layers, and the anode side and the cathode side of the charge generating layer may contain materials having a function of injecting charge to the contiguous layers.
  • electron injecting compounds such as BaO, SrO, Li 2 O, LiCl, LiF, MgF 2 , MgO, CaF 2 may be laminated on the anode side of the charge generating layer.
  • the materials of the charge generating layer can be selected with reference to Japanese Patent Application Laid-Open (JP-A) No. 2003-45676, U.S. Patent Nos. 6337492, 6107734, and 6872472.
  • the organic EL element may have a resonator structure.
  • the organic EL element has a multilayer film mirror including a plurality of laminated films different in refractive index, a transparent or translucent electrode, a light emitting layer, and a metal electrode by superposition on a transparent substrate.
  • the light generated from the light emitting layer repeats reflection and resonates between the multilayer film mirror and the metal electrode as reflectors.
  • a transparent or translucent electrode and a metal electrode respectively function as reflectors on a transparent substrate, and light generated from the light emitting layer repeats reflection and resonates between them.
  • effective refractive indices of two reflectors, optical path determined by the refractive index and thickness of each layer between the reflectors are adjusted to be optimal values to obtain a desired resonance wavelength.
  • the protective layer is not particularly limited as long as it can shield 40% or more of exposure light having a predetermined wavelength, irradiated for forming concave portions in the after-mentioned light extraction layer, and may be suitably selected in accordance with the intended use.
  • the protective layer preferably allows light emitted from the organic layer to pass 80% or higher is preferable.
  • the protective layer With 40% or more of the exposure light having a predetermined wavelength, preferably 50% or more of the exposure light, being shielded by the protective layer, it is possible to prevent the light irradiated for forming concave portions in the light extraction layer from passing through the protective layer to degrade an organic layer(s) in the organic EL element.
  • the light- shielding is not particularly limited and may be suitably selected in accordance with the intended use.
  • absorptive light shielding, and reflective light- shielding are exemplified.
  • the light extraction efficiency can be further improved.
  • a structure of the protective layer for example, a single-layer structure of only an inorganic material layer, a multilayer structure of only an inorganic material layer, a multilayer structure of an inorganic material layer and an organic material layer, and a dielectric multilayer film structure are exemplified.
  • the inorganic material layer is not particularly limited and may be suitably selected in accordance with the intended use.
  • the inorganic material layer is not particularly limited and may be suitably selected in accordance with the intended use.
  • any suitable material layer may be suitably selected in accordance with the intended use.
  • SiON-layer, and SiN-layer are exemplified.
  • SiON-layer is preferred in terms of high resistance to solvent (e.g. TFP (tetrafluoropropanol) solvent) to be used in the formation of the after- mentioned light extraction layer.
  • solvent e.g. TFP (tetrafluoropropanol) solvent
  • the organic layer in the organic EL element can be prevented from being dissolved in the formation of the light extraction layer, thereby preventing the organic layer from not emitting light.
  • the organic material layer is not particularly limited and may be suitably selected in accordance with the intended use.
  • AIq is not particularly limited and may be suitably selected in accordance with the intended use.
  • AIq is not particularly limited and may be suitably selected in accordance with the intended use.
  • AIq is not particularly limited and may be suitably selected in accordance with the intended use.
  • AIq is not particularly limited and may be suitably selected in accordance with the intended use.
  • AIq is not particularly limited and may be suitably selected in accordance with the intended use.
  • AIq amino acids
  • the dielectric multilayer film is not particularly limited and may be suitably selected in accordance with the intended use.
  • a dielectric multilayer film composed of a Ti ⁇ 3 film, and a Si ⁇ 2 film etc. is exemplified.
  • the thickness of the protective layer is not particularly limited and may be suitably selected in accordance with the intended use. It is however preferably 0.7 ⁇ m to 20 ⁇ m, more preferably 1 ⁇ m to 10 ⁇ m, particularly preferably 1.5 ⁇ m to 7 ⁇ m.
  • the thickness of the protective layer is less than 0.7 ⁇ m, gas, moisture and the like enter the protective layer, which may damage the electrodes. When the thickness is more than 20 ⁇ m, the protective layer may be peeled off by external stress and thermal shrinkage.
  • a method of forming the protective layer is not particularly limited and may be suitably selected in accordance with the intended use.
  • a vacuum deposition method sputtering method, reactive sputtering method, MBE (Molecular Beam epitaxy) method, cluster ion beam method, ion plating method, plasma polymerization method (high-frequency excited ion [plating method], plasma CVD method, laser CVD method, thermal
  • the light extraction layer is not particularly limited as long as it is a layer which can be deformed by being exposed to the exposure light having a predetermined wavelength, and may be suitably selected in accordance with the intended use.
  • a light extraction layer heat mode light extraction layer
  • a light extraction layer which is deformable by heat generated through irradiation of light to allow concave portions to be formed
  • a light extraction layer which is deformable by irradiation of ultraviolet ray to allow concave portions to be formed.
  • the material of the light extraction layer is not particularly limited and may be suitably selected in accordance with the intended use.
  • examples thereof include organic materials, inorganic materials, and composite materials of an inorganic material with an organic material.
  • organic materials are preferred in terms of ease of film formation by spin-coating and availability of materials having low transition temperature.
  • the organic materials are preferably dyes whose light absorption amount can be controlled by molecular design. Specific examples of the materials include cyanine-based, phthalocyanine-based, quinone-based, squaryliunvbased, azulenium-based, thiol-complex salt-based, melocyanine-based recording materials.
  • the light extraction layer preferably contains a dye.
  • the dye is not particularly limited and may be suitably selected in accordance with the intended use.
  • examples of the dye include methine dyes (e.g. cyanine dye, hemicyanine dye, styryl dye, oxonol dye, and merocyanine dye), macrocyclic dyes (e.g. phthalocyanine dye, naphthalocyanine dye, and porphyrin dye), azo dyes (including azo metal chelate dyes), arylidene dye, complex dye, coumarin dye, azole derivatives, triazine derivatives, 1-aminobutadiene derivatives, cinnamic derivatives, and quinophthalone dyes.
  • methine dyes e.g. cyanine dye, hemicyanine dye, styryl dye, oxonol dye, and merocyanine dye
  • macrocyclic dyes e.g. phthalocyanine dye,
  • a dye-based light extraction layer in which one-time information can be recorded is preferable in terms of ease of formation of a film by dissolving an organic recording material in a solvent and applying the coating solution by spin-coating or spray coating, and its superiority in productivity.
  • the dye-based light extraction layer preferably contains a dye having absorption in a recording wavelength range.
  • An extinction coefficient k representing a light absorption amount of the dye is preferably 10 or lower, more preferably 5 or lower, particularly preferably 3 or lower, most preferably 1 or lower. When the extinction coefficient k is excessively high, light does not arrive from the light incident side of the light extraction layer to the opposite side, and nonuniform holes may be formed in the light extraction layer.
  • the extinction coefficient k is preferably 0.0001 or higher, more preferably 0.001 or higher, particularly preferably 0.1 or higher.
  • the extinction coefficient is excessively low, the light absorption amount of the dye is reduced, and a large laser power is required to compensate for it, which may lead to a reduction in processing speed.
  • the light extraction layer is required to have light absorption in a wavelength of light irradiated, and from this viewpoint, a dye can be selected and its layer structure can be changed according to the wavelength of the laser light source.
  • the dye is preferably selected from pentamethine dyes, heptamethineoxonol dyes, phthalocyanine dyes, and naphthalocyanine dyes, etc.
  • the dye is preferably selected from trimethinecyanine dyes, pentamethineoxonol dyes, azo dyes, azo metal complex dyes, pyrromethene complex dyes, etc.
  • monomethinecyanine dyes monomethineoxonol dyes, zeromethinemerocyanine dyes, phthalocyanine dyes, azo dyes, azo metal complex dyes, porphyrin dyes, arylidene dyes, complex dyes, coumarine dyes, azole derivatives, triazine derivatives, benzotriazole derivatives, 1-aminobutadiene derivatives, quinophthalone dyes, etc.
  • preferred light extraction layer compounds in the case of the oscillation wavelength of the laser light source being near 780 nm, in the case of near 660 nm, and in the case of near 405 nm, respectively, are exemplified, by way of example.
  • the following compounds (1-1 to I- 10) are compounds in the case of the oscillation wavelength of the laser light source being near 780 nm>"
  • the following compounds (IPl to IP8) are compounds in the case of the oscillation wavelength of the laser light source being near 660 nm!
  • the following compounds (HPl to III- 14) are compounds in the case of the oscillation wavelength of the laser light source being near 405 nm.
  • the above dye-based light extraction layer can be formed in the following manner. Specifically, a dye is dissolved together with a binder and the like in an appropriate solvent to prepare a coating liquid, and subsequently,, the coating liquid is applied onto a protective layer to form a coating film, followed by drying, so that a dye-based light extraction layer can be formed.
  • the temperature of a surface of the protective layer to be coated with the coating liquid is preferably 10°C to 40°C.
  • the temperature of the coated surface is preferably 15°C or higher, more preferably 20°C or higher, particularly preferably 23°C or higher.
  • the temperature of the coated surface is preferably 35°C or lower, more preferably 30 0 C or lower, particularly preferably 27 0 C or lower.
  • the light extraction layer may be a single layer or a multilayer. In the case of a multilayer structure, a multilayered light extraction layer can be formed by repeating the coating process plural times.
  • the concentration of the dye in the coating liquid is 0.01% by mass to 15% by mass, preferably 0.1% by mass to 10% by mass, more preferably 0.5% by mass to 5% by mass, particularly preferably 0.5% by mass to 3% by mass.
  • the solvent for use in the coating liquid is not particularly limited and may be suitably selected in accordance with the intended use.
  • examples thereof include esters such as butyl acetate, ethyl lactate, and cellosolve acetate; ketones such as methylethylketone, cyclohexanone, and methylisobutylketone; chlorinated hydrocarbons such as dichlorome thane, 1,2-dichloroethane, and chloroform; amides such as dimethylformamide; hydrocarbons such as methylcyclohexane; ethers such as tetrahydrofuran, ethyl ether, and dioxane; alcohols such as ethanol, n-propanol, isopropanol, n-butanol, and diacetone alcohol; fluorine -containing solvents such as 2,2,3,3-tetrafluoropropanol; and glycol ethers such as ethylene glycol monommethylether, ethylene
  • solvents may be used alone or in combination, in consideration of the solubility of the dye used.
  • various additives such as an antioxidant, UV absorbent, plasticizer and lubricant, may further be added according to the purpose.
  • the method of coating the coating liquid is not particularly limited and may be suitably selected in accordance with the intended use.
  • spray coating method, spin-coating method, dipping method, roll coating method, blade coating method, doctor roll method, doctor blade method, and screen printing method are exemplified.
  • spin-coating method is preferable in terms of superiority of productivity and ease of controlling film thickness.
  • the amount of the light extraction layer compound dissolved in the organic solvent is preferably 0.3% by weight to 30% by weight, more preferably 1% by weight to 20% by weight.
  • the light extraction layer compound is preferably dissolved in tetrafluoropropanol (TFP) in an amount of 1% by weight to 20% by weight.
  • the heat decomposition temperature of the light extraction layer compound is preferably 150°C to 500 0 C, more preferably 200°C to 400°C.
  • the coating temperature of the coating liquid is preferably 23°C to 50°C, more preferably 24°C to 40 0 C, particularly preferably 25°C to 30°C.
  • the binder contained in the coating liquid is not particularly limited and may be suitably selected in accordance with the intended use.
  • examples thereof include natural organic high-molecular materials such as gelatin, cellulose derivatives, dextrin, rosin, and rubber; hydrocarbon resins such as polyethylene, polypropylene, polystyrene, and polyisobutylene; vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl chloride -polyvinyl acetate copolymers!
  • acrylic resins such as polymethyl acrylate, and polymethyl methacrylate
  • synthetic organic polymers of initial condensates of thermosetting resins such as polyvinyl alcohol, chlorinated polyethylene, epoxy resin, butyral resins, rubber derivatives, and phenol formaldehyde.
  • the amount of the binder resin used to the dye is preferably 0.01 times to 50 times (mass ratio), preferably 0.1 times to 5 times (mass ratio).
  • a discoloration inhibitor can be incorporated into the light extraction layer.
  • the discoloration inhibitor is not particularly limited and may be suitably selected in accordance with the intended use.
  • a singlet oxygen quencher is exemplified.
  • the singlet oxygen quencher is not particularly limited and may be suitably selected in accordance with the intended use.
  • those described in publications such as known patent specifications are exemplified.
  • JP-A Japanese Patent Application Laid-Open
  • 58-175693 Japanese Patent Application Laid-Open
  • 59-81194 60-18387, 60-19586, 60-19587, 60-35054, 60-36190, 60-36191, 60-44554, 60-44555, 60-44389, 60-44390, 60-54892, 60-47069, 63-209995, 4-25492
  • the amount of the discoloration inhibitor used to the amount of the dye is 0.1% by- mass to 50% by mass, preferably 0.5% by mass to 45% by mass, more preferably 3% by mass to 40% by mass, particularly preferably 5% by mass to 25% by mass.
  • the solvent coating method in the case where the light extraction layer is a dye-based recording layer has been described, however, the light extraction layer can also be formed by film forming method such as vapor deposition, sputtering, CVD, or the like.
  • the dye in a wavelength of the laser light beam used for processing the after-mentioned concave portions, a dye having a light absorption rate higher than those of other wavelengths is used.
  • the dye desirably has a higher light absorption rate than that of the light emitting wavelength of the organic EL element.
  • a light absorption wavelength peak of the dye is not necessarily limited to those in a visible light wavelength range, and the dye may have a light absorption wavelength peak in an ultraviolet radiation wavelength or in an infrared radiation wavelength.
  • the refractive index of the light extraction layer constituting the concave portions is preferably high.
  • a dye absorption wavelength ⁇ a is preferably shorter than a center wavelength ⁇ c of the organic EL element ( ⁇ a ⁇ ⁇ c).
  • a difference in wavelength of ⁇ a from ⁇ c is preferably 10 nm or greater, more preferably 25 nm or greater, particularly preferably 50 nm or greater.
  • the difference between ⁇ a and ⁇ c is preferably 500 nm or smaller, more preferably 300 nm or smaller, particularly preferably 200 nm or smaller. This is because when the difference between ⁇ a and ⁇ c is excessively large, the refractive index of the light extraction layer will be excessively low with respect to the light emitted from the organic EL element.
  • the wavelength ⁇ w used for recording concave portions with a laser satisfies a relationship ⁇ a ⁇ ⁇ w. This is because when this relationship is satisfied, the light absorption amount of the dye will be in an appropriate range, the recording efficiency will be improved, and concaves and convexes can be neatly formed. Further, it is preferable that a relationship ⁇ w ⁇ ⁇ c be satisfied.
  • the wavelength ⁇ w should be a wavelength of light absorbed by the dye, and thus with the center wavelength ⁇ c of the light emitting element being present on the longer wavelength side than the wavelength ⁇ w, light emitted from the light emitting element will have increased transmittance without being absorbed by the dye, making it possible to improve the light extraction efficiency.
  • the wavelength ⁇ w of the laser light beam for forming the concave portions is not particularly limited, as long as it is a wavelength by which a great laser power can be obtained, and may be suitably selected in accordance with the intended use.
  • wavelengths lower than 1,000 nm are exemplified, such as 193 nm, 210 nm, 266 nm, 365 nm, 405 nm, 488 nm, 532 nm, 633 nm, 650 nm, 680 nm, 780 nm, and
  • the type of the laser light beam is not particularly limited and may be suitably selected in accordance with the intended use.
  • a gas laser, a solid laser, and a semiconductor laser are exemplified.
  • solid laser and semiconductor laser are preferred.
  • the laser light beam may be a continuous laser or a pulse beam, but a laser light beam whose light emitting interval is be freely changeable, for example, a semiconductor laser is preferable.
  • the laser cannot not be directly on/off modulated, it may be modified with an external modulation element. Further, from the viewpoint of processing speed, the laser power is preferably high.
  • the scanning speed (a speed of scanning the light extraction layer with the laser light beam, for example, the number of revolutions of the after-mentioned optical disk drive) must be increased. Therefore, from the viewpoint of the scanning speed, the laser power is preferably 100 W or lower, more preferably 10 W or lower, particularly preferably 5 W or lower, most preferably 1 W or lower. And, the laser power is preferably 0.1 mW or higher, more preferably 0.5 mW or higher, particularly preferably 1 mW or higher.
  • the laser light beam is preferably a light beam which is superior in oscillation wavelength width and coherence and whose spot size can be focused to a spot size as small as its wavelength.
  • a recording strategy optical pulse irradiation conditions for forming concave portions properly
  • the thickness of the light extraction layer is desirably selected so as to correspond to the depth of the after-mentioned concave portions.
  • the thickness of the light extraction layer is not particularly limited and may be suitably selected in accordance with the intended use. For example, it is 1 nm to 10,000 nm.
  • the thickness of the light extraction layer is preferably 10 nm or more, more preferably 30 nm or more. This is because with the thickness of the light extraction layer being excessively thin, concave portions are formed in a relatively shallow depth, and appropriate optical effects cannot be obtained.
  • the thickness of the light extraction layer is preferably 1,000 nm or less, more preferably 500 nm or less. This is because with the thickness of the light extraction layer being excessively thick, a large laser power is required, it is difficult to form deep holes, and further the processing speed decreases, undesirably.
  • a thickness t of the light extraction layer and a diameter d of concave portions preferably satisfy the following relationship.
  • the thickness t of the light extraction layer preferably a value satisfying t ⁇ 1Od, more preferably a value satisfying t ⁇ 5d, particularly preferably a value satisfying t ⁇ 3d.
  • the thickness t of the light extraction layer preferably a value satisfying t > d/100, more preferably a value satisfying t > d/10, particularly preferably a value satisfying t > d/5.
  • the coating liquid is applied to the protective layer by a coating method, such as spin-coating, dip coating, extraction coating, thereby forming a light extraction layer.
  • the barrier layer is formed to prevent the light extraction layer from receiving impact, and is optionally provided.
  • the material of the barrier layer is not particularly limited, as long as it is a transparent material, and may be suitably selected in accordance with the intended use. It is, however, preferably polycarbonate, cellulose triacetate or the like. More preferred is a material having a moisture absorption coefficient of 5% or lower at 23°C and a relative humidity of 50%.
  • As the material of the barrier layer an oxide or sulfide of Si ⁇ 2, ZnS, and GaO, etc. can also be used.
  • transparent means that the material is so transparent as to transmit the light emitted from the organic EL element (transmittance: 80% or higher).
  • the barrier layer is formed, for example, in the following manner.
  • a photocurable resin constituting an adhesive layer is dissolved in an appropriate solvent to prepare a coating liquid, the coating liquid is applied onto the light extraction layer at a predetermined temperature to form a coating film, subsequently, the coating film is laminated with for example, a cellulose triacetate film (TAC film) obtained by extrusion of plastic, and the laminated TAC film is irradiated with light, from above to cure the coating film.
  • TAC film preferably contain san ultraviolet absorber.
  • the thickness of the barrier layer is not particularly limited and may be suitably selected in accordance with the intended use. It is, however, 0.01 mm to 0.2 mm, preferably 0.03 mm to 0.1 mm, more preferably 0.05 mm to 0.095 mm.
  • a plurality of concave portions are periodically formed.
  • the concave portions are formed by irradiating the light extraction layer and the barrier layer with a focused light beam so as to the irradiate portions are deformed (including deformed portions caused by extinction of the light beam).
  • the principle of formation of the concave portions is as follows.
  • the light extraction layer (light extraction layer compound) is irradiated with a laser light beam having a wavelength of light absorption of the material (a wavelength of light absorbed by the material)
  • the laser light beam is absorbed by the light extraction layer, the absorbed light is converted into heat, and thereby the temperature of the portion irradiated with the laser light beam is increased.
  • chemical and/or physical changes such as softening, liquefaction, vaporization, sublimation and decomposition, take place in the light extraction layer.
  • the material inducing the changes moves and/or disappears, and thereby concave portions are formed.
  • the barrier layer is an extremely thin film, it moves and/or disappears together with the moving and/or disappearing of the light extraction layer.
  • a forming method of pits which is known in write-once optical disks and recordable optical disks, can be applied thereto. More specifically, it is possible to employ, for example, a known running OPC technique (e.g. disclosed in Japanese Patent (JP-B) No. 3096239), in which the intensity of reflected light of a laser varying according to a pit size is detected, and the laser output power is corrected so that the reflected light has a constant intensity, thereby forming uniform pits. Further, in the vaporization, sublimation or decomposition of the light extraction layer (light extraction layer compound), it is preferred that the rate of change thereof be high and steep.
  • a weight decrease rate measured by a differential thermal scale (TG-DTA) in the vaporization, sublimation or decomposition of the light extraction compound is preferably 5% or higher, more preferably 10% or higher, particularly preferably 20% or higher.
  • a weight decrease gradient (weight decrease rate per degree of temperature rise) measured by a differential thermal scale (TG-DTA) in the vaporization, sublimation or decomposition of the light extraction compound is preferably 0.1%/°C or greater, more preferably 0.2%/°C or greater, particularly preferably 0.4%/°C or greater.
  • the transition temperature of chemical and/or physical changes is preferably 2,000°C or lower, more preferably l,000°C or lower, particularly preferably 500°C or lower.
  • the transition temperature is preferably 50°C or higher, more preferably 100°C or higher, particularly preferably 150°C or higher.
  • the transition temperature is excessively low, a clear hole edge shape may not be formed due to the small temperature gradient, as compared to the peripheral portions. 5
  • FIG. IA is a plan view illustrating one example of a light extraction layer in an organic EL device according to the present invention, and FIG.
  • FIG. 2A is a view illustrating a relationship between a diameter of concave portions in a light o extraction layer and a pitch of the concave portions
  • FIG. 2B is a view illustrating a relationship between a light emission time period of a laser light beam and one frame period.
  • concave portions 16 are formed in a dot shape, a light extraction layer with the dots being arranged in a lattice pattern can be employed.
  • the concave5 portions 16 are each formed in a long slender groove, and may be concave portions intermittently connected to one another. Further, although illustration is omitted, the concave portions 16 may be formed in a pattern of continuous grooves.
  • the length of a pitch P between adjacent concave portions 16 is from 0.01 times to 100 times a center wavelength ⁇ c of light emitted from the organic EL element serving as a luminous element.
  • the pitch P of the concave portions 16 is preferably from 0.05 times to 20 times the center wavelength ⁇ c, more preferably from 0.1 times to 5 times, particularly preferably from 0.5 times to 2 times. More specifically, the pitch P is preferably 0.01 times of more the center wavelength ⁇ c, more preferably 0.05 times or more, particularly preferably 0.1 times or more, most preferably 0.2 times or more. Also, the pitch P is preferably 100 times or less the center wavelength ⁇ c, more preferably 50 times or less, particularly preferably 10 times or less, most preferably 5 times or less.
  • the diameter or groove width of the concave portions 16 is from 0.005 times to 25 times the center wavelength ⁇ c, preferably from 0.025 times to 10 times, more preferably from 0.05 times to 2.5 times, particularly preferably 0.25 times to 2 times.
  • the diameter or groove width described here is a size corresponding to a half depth of the concave portions 16, a so-called half-value width.
  • the diameter or groove width of the concave portions 16 can be suitably set in the above range, but it is desired that the diameter be controlled according to the size of the pitch P so that macroscopically, the refractive index is gradually lower as the concave portions 16 are away from the organic EL element.
  • the diameter or groove width of the concave portions 16 is preferably also made larger, and if the pitch P is small, the diameter or groove width of the concave portions 16 is preferably also made smaller.
  • the diameter or groove width is preferably, for example, 20% to 80% of the pitch P, more preferably 30% to 70%, particularly preferably 40% to 60%. That is, the diameter or groove width of the concave portions 16 is as large in size as one half of the pitch P.
  • the depth of the concave portions 16 is preferably from 0.01 times to 20 times the center wavelength ⁇ c, more preferably from 0.05 times to 10 times, particularly preferably from 0.1 times to 5 times, most preferably from 0.2 times to 2 times.
  • the following describes forming steps of a light extraction layer and concave portions in a production method of an organic EL device having the above configuration.
  • FIGS. 3 A to 3 C are views each illustrating one example of a forming step for a light extraction layer and concave portions in a production method of an organic EL device according to the present invention. As illustrated in FIG. 3A, firstly, a light emitting a light emitting section
  • a protective layer 14, a light extraction layer 15, and a barrier layer 15a are formed in this order on the light emitting section 21.
  • An appartus for forming the concave portions 16 can use the same configuration as that of a conventionally known optical disk drive.
  • the configuration of such an optical disk drive is described, for example, in Japanese Patent Application Laid-Open (JP-A) No. 2003-203348.
  • JP-A Japanese Patent Application Laid-Open
  • a silicon wafer, in which organic EL elements are formed in a matrix form is formed into the same shape as an optical disk or attached to a dummy optical disk, and then is inserted in the optical disk drive.
  • a light extraction layer 15 is irradiated with a laser light beam at an appropriate output power to deform the light extraction layer 15.
  • a pulse signal or a continuous signal is input in the laser light source so as to match a pattern of dots or grooves as exemplarily illustrated in FIGS. IA and IB.
  • a duty ratio of the laser light beam emitted at a predetermined cycle ( ⁇ /T, light emitting time ⁇ /cycle T) is preferably set to be lower than a duty ratio (d/P, length of the concave portions 16 in a scanning direction of the laser light beam d/pitch P, see FIG. 2A) actually formed concave portions 16.
  • ⁇ /T light emitting time ⁇ /cycle T
  • d/P length of the concave portions 16 in a scanning direction of the laser light beam d/pitch P, see FIG. 2A
  • the laser light beam can be irradiated at a duty ratio lower than 50%.
  • the duty ratio of the laser light beam is preferably less than 50%, more preferably less than 40%, particularly preferably less than 35%.
  • the duty ratio of the laser light beam is preferably 1% or more, more preferably 5% or more, particularly preferably 10% or more.
  • the laser light beam can be easily focused on a surface of the light emitting section 21, even if the light emitting section 21 partially swell or warps.
  • the laser light beam is focused and irradiated, from the extraction layer 15, by an optical system 30 of the disk drive.
  • an optical system 30 of the disk drive By moving the optical system 30 while rotating the light emitting section 21 in the same manner as in the case of recording information on an optical recording disk, concave portions 16 can be formed the entire surface of the light extraction layer 15.
  • the processing conditions used in producing the concave portions 16 are as follows.
  • the numerical aperture NA of the optical system 30 is preferably 0.4 or higher, more preferably 0.5 or higher, particularly preferably 0.6 or higher. Also, the numerical aperture NA is preferably 2 or lower, more preferably 1 or lower, particularly preferably 0.9 or lower. When the numerical aperture NA is excessively small, fine processing cannot be carried out, and when the NA is excessively large, a margin to the angle in the recording undesirably decreases.
  • the wavelength of the optical system 30 is not particularly limited and may be suitably selected in accordance with the intended use. For example, 405 nm ⁇ 30 nm, 532 nm ⁇ 30 nm, 650 nm ⁇ 30 nm, and 780 nm + 30 nm are exemplified.
  • the output power of the optical system 30 is 0.1 mW or higher, preferably 1 mW or higher, more preferably 5 mW or higher, particularly preferably 20 mW or higher. Also, the output power of the optical system 30 is 1,000 mW or lower, preferably 500 mW or lower, more preferably 200 mW or lower. This is because when the output power of the optical system 30 is excessively low, it takes time in the processing, and when the output power of the optical system 30 is excessively high, the durability of members constituting the optical system 30 degrades.
  • a linear velocity while relatively moving the optical system 30 with respect to the light extraction layer 15 is 0.1 m/s or higher, preferably 1 m/s or higher, more preferably 5 m/s or higher, particularly preferably 20 m/s or higher.
  • the linear velocity is 500 m/s or lower, preferably 200 m/s or lower, more preferably 100 m/s or lower, particularly preferably 50m/s or lower. This is because when the linear velocity is excessively high, it is difficult to increase the processing accuracy, and when the linear velocity is excessively slow, it takes time in the processing and concave portions cannot be made in favorable shape.
  • NE0500 manufactured by Pulstec Industrial Co., Ltd. is exemplified.
  • the other members are not particularly limited and may be suitably selected in accordance with the intended use.
  • a substrate is exemplified. « Substrate »
  • the substrate is not particularly limited and may be suitably selected in accordance with the intended use. It is however preferably a substrate that does not scatter or attenuate the light emitted from the organic layer(s).
  • materials of the substrate include inorganic materials, e.g., yttria stabilized zirconia (YSZ), glass, etc., and organic materials, such as polyester, e.g., polyethylene terephthalate, polybutylene phthalate, polyethylene naphthalate, etc., polystyrene, polycarbonate, polyether sulfone, polyallylate, polyimide, polycycloolefin, norbornene resin, poly(chlorotrifluoroethylene), etc.
  • alkali-free glass is preferably used as the material for reducing elution of ions from the glass.
  • soda lime glass it is preferred to provide a barrier coat such as silica.
  • materials excellent in heat resistance, dimensional stability, solvent resistance, electrical insulating properties and processability are preferably used.
  • the shape, structure and size of the substrate are not especially restricted, and these can be arbitrarily selected in accordance with the intended use and purpose of the light emitting element.
  • the substrate is preferably plate-shaped.
  • the structure of the substrate may be a single layer structure or may be a lamination structure, and may consist of a single member or may be formed of two or more members.
  • the substrate may be colorless and transparent, or may be colored and transparent, but from the viewpoint of not scattering or attenuating the light emitted from the organic light emitting layer, a colorless and transparent substrate is preferably used.
  • the substrate can be provided with a moisture permeation preventing layer (a gas barrier layer) on the front surface or rear surface.
  • a moisture permeation preventing layer a gas barrier layer
  • the materials of the moisture permeation-preventing layer (the gas barrier layer) inorganic materials such as silicon nitride and silicon oxide are preferably used.
  • the moisture permeation-preventing layer (the gas barrier layer) can be formed, for example, by a high frequency sputtering method.
  • thermoplastic substrate When a thermoplastic substrate is used, if necessary, a hard coat layer and an undercoat layer may further be provided.
  • the method for producing an organic electroluminescence device of the present invention includes at least an organic electroluminescence element forming step, a protective layer forming step, a light extraction layer forming step, and a concave portion forming step, and further includes other steps as required.
  • Organic Electroluminescence Element Forming Step >
  • the organic electroluminescence element forming step is a step of forming an organic electroluminescence element (organic EL element) having a pair of electrodes, and an organic layer disposed between the pair of electrodes.
  • the protective layer forming step is a step of forming, on the organic EL element, a protective layer which shields 40% or more of exposure light having a predetermined wavelength, irradiated in the after-mentioned concave portion forming step.
  • the light extraction layer forming step is a step of forming, on the protective layer, a light extraction layer for extracting light emitted from the organic layer.
  • the concave portion forming step is a step of forming a plurality of concave portions in the light extraction layer by irradiating the light extraction layer with the exposure light beam having a predetermined wavelength.
  • Example 1 Hereinafter, a production process of an organic EL device 100 illustrated in FIG. 4 will be described in detail.
  • 2-TNATA(4,4',4"-tris(2-naphthylamino) triphenylamine) was codeposited with MoO3 by a vacuum evaporation method, using a Ta boat and a Mo boat so as to have a Mo ⁇ 3 doped concentration of 30% by mass and a thickness of 20 nm, to thereby form a first hole injection layer.
  • 2-TNATA was formed in a thickness of 150 nm using a Ta boat to thereby form a second hole injection layer.
  • NPD(N,N'-dinaphthyl-N,N'-diphenyl-[l,l'-biphenyl]-4,4'-diamine) was formed in a thickness of 10 nm using a Ta boat to there by form a first hole transporting layer.
  • CBP hole transporting host
  • Ir (ppy)3 tris(2-phenylpyridine)iridium (III)
  • a vacuum evaporation method using a Ta boat, so as to have an Ir(ppy)3 doped concentration of 10% by mass and a thickness of 30 nm to thereby form a light emitting layer.
  • BAlq bis(2-methyl-8-quinolinolato)(p-phenyl -phenolato) aluminum
  • BAlq bis(2-methyl-8-quinolinolato)(p-phenyl -phenolato) aluminum
  • LiF was formed in a thickness of 1 nm by a vacuum evaporation method using a Mo boat
  • Al was formed in a thickness of 1.5 nm by a vacuum evaporation method using a W filament to thereby form an electron injection layer.
  • first hole injection layer, the second hole injection layer, the first hole transporting layer, the light emitting layer, the hole blocking layer and the electron injection layer constitute an organic layer 10.
  • SiON was formed by ion plating to form a protective layer 14 of 5 ⁇ r ⁇ in thickness. Further, on the protective layer (SiON layer) 14, a light extraction layer
  • the forming method of the light extraction layer 15 is as follows.
  • a die material (2 g) represented by the following Chemical Formula was dissolved in 100 mL of tetrafluoropropanol (TFP) solvent to prepare a coating liquid, and the coating liquid was spin-coated on the protective layer.
  • the coating liquid was dispensed to inner circumferential part of the protective layer (SiON layer) 14 at the coating-start number of revolutions of 500 rpm and the coating-end number of revolutions 1,000 rpm, and then the number of revolutions was increased gradually to 2,200 rpm.
  • the dye material was found to have a refractive index n of 1.986, and an extinction coefficient k of 0.0418.
  • the conditions for forming the concave portions 16 are as follows : Apparatus used.: NE0500 (wavelength: 405 nm, NA 0.65) manufactured by Pulstec Industrial Co., Ltd. Laser output power: 2 mW Linear velocity: 5 m/s Recording signal: rectangular wave of 5 MHz
  • the protective layer (SiON layer) 14 absorbed about 40% of leakage of exposure light (405 nm) irradiated to the light extraction layer 15 using NE0500 manufactured by
  • the protective layer 14 transmitted 80% or more of light having a wavelength of 520 nm and was able to extract light emitted from the organic layer 10 efficiently.
  • the light extraction efficiency of the organic EL device 100 of Example 1 was 1.2 times the light extraction efficiency of the organic EL device where the light extraction layer 15 was not provided.
  • Example 2 An organic EL device 200 was produced in the same manner as in
  • Example 1 except that SiN and SiON were formed by a CVD method to form a protective layer 14 (FIG. 5) composed of a SiN layer 14a (1 ⁇ m)/a SiON layer 14b (4 ⁇ m)/a SiN layer 14c (l ⁇ m) instead of forming the SiON in a thickness of 5 ⁇ m by ion plating so as to form a protective layer 14; and a light extraction layer 15 in a thickness of 100 nm and a barrier layer (not illustrated) were formed over the protective layer 14 instead of forming only a light extraction layer 15 in a thickness of 100 nm on the protective layer 14 in Example 1.
  • a thin film of ZnO-Ga2 ⁇ 3 (ZnO 95% by weight, Ga2 ⁇ 3 5% by weight) was formed by DC magnetron sputtering.
  • the forming conditions are as follows. Thickness- about 5 nm Output power: 1 kW Film formation time: 2 seconds Atmosphere ' • Ar (flow rate: 50 seem)
  • a film composed of a SiN layer (l ⁇ m)/a SiON layer (4 ⁇ m)/a SiN layer (l ⁇ m) was produced by a CVD method, and the light transmittance of the produced film was measured using a spectrophotometer (manufactured by Hitachi Ltd.). The result is illustrated in FIG. 9.
  • the protective layer (SiN layer/SiON layer/SiN layer) 14 absorbed about 45% of leakage of exposure light (405 nm) irradiated to the light extraction layer 15 using NE0500 manufactured by Pulstec Industrial Co., Ltd. to form the concave portions 16, and thus damage on the organic layer 10 in the organic EL element 20 was reduced. Also, since the SiON layer has resistance to the TFP (tetrafluoropropanol) solvent used in the formation of the light extraction layer 15, it was able to protect the organic EL element 20 from the TFP (tetrafluoropropanol) solvent.
  • TFP tetrafluoropropanol
  • the protective layer 14 transmitted 80% or more of light having a wavelength of 520 nm and was able to extract light emitted from the organic layer 10 efficiently.
  • the light extraction efficiency of the organic EL device 200 of Example 2 was 1.2 times the light extraction efficiency of the organic EL device 200 where the light extraction layer 15 was not provided. (Example 3)
  • An organic EL device 300 was produced in the same manner as in Example 1 except that AIq (aluminum quinolyl) was formed in a thickness of 0.2 ⁇ m by ion plating, SiON was formed in a thickness of 2 ⁇ m by ion plating to form a protective layer 14 (FIG. 6) composed of an AIq layer 14d (0.2 ⁇ m)/a SiON layer 14e (2 ⁇ m) instead of forming the SiON in a thickness of 5 ⁇ m by ion plating so as to form a protective layer 14.
  • AIq aluminum quinolyl
  • a film composed of an AIq layer (0.2 ⁇ m)/a SiON layer (2 ⁇ m) was produced by ion plating, and the light transmittance of the produced film was measured.
  • the result was illustrated in FIG. 10.
  • the protective layer (AIq . layer /SiON layer) 14 absorbed about 65% of leakage of exposure light (405 nm) irradiated to the light extraction layer 15 using NE0500 manufactured by Pulstec Industrial Co., Ltd. to form the concave portions 16, and thus damage on the organic layer 10 in the organic EL element 20 was reduced.
  • the SiON layer has resistance to the TFP (tetrafluoropropanol) solvent used in the formation of the light extraction layer 15, it was able to protect the organic EL element 20 from the TFP (tetrafluoropropanol) solvent. Further, the protective layer 14 transmitted 80% or more of light having a wavelength of 520 nm and was able to extract light emitted from the organic layer 10 efficiently.
  • the light extraction efficiency of the organic EL device 300 of Example 3 was 1.2 times the light extraction efficiency of the organic EL device 300 where the light extraction layer 15 was not provided. (Example 4)
  • An organic EL device 400 was produced in the same manner as in
  • a dielectric multilayer film was produced by sputtering according the above manner, and the light transmittance of the produced dielectric multilayer film was measured using a spectrophotometer (manufactured by Hitachi Ltd.). The result is illustrated in FIG. 11.
  • the protective layer 14 reflected about 90% of leakage of exposure light (405 nm) which was irradiated to the light extraction layer 15 using NE0500 manufactured by Pulstec Industrial Co., Ltd. in the formation of the concave portions 16, and thus damage on the organic layer 10 in the organic EL element 20 was reduced. Further, the protective layer 14 transmitted 90% or more of light having a wavelength of 520 nm and was able to extract light emitted from the organic layer 10 efficiently.
  • the light extraction efficiency of the organic EL device 400 of Example 4 was 1.2 times the light extraction efficiency of the organic EL device where the light extraction layer 15 was not provided.
  • An organic EL device 900 (FIG.
  • Example 12 was produced in the same manner as in Example 1 except that SiON was formed in a thickness of 1 ⁇ m by ion plating to form a protective layer (not illustrated) instead of forming the SiON in a thickness of 5 ⁇ m by ion plating so as to form a protective layer 14.
  • SiON was formed in a thickness of 1 ⁇ m by ion plating to form a protective layer (not illustrated) instead of forming the SiON in a thickness of 5 ⁇ m by ion plating so as to form a protective layer 14.
  • 85% or more of exposure light (405 nm) which was irradiated to the light extraction layer 15 using NE0500 manufactured by Pulstec Industrial Co., Ltd. to form the concave portions 16 was transmitted to the protective layer (not illustrated), and therefore the organic layer 10 in the organic EL element 20 was damaged.
  • the light emission efficiency decreased about 20% as compared to the organic layer in the organic EL device where no exposure light (405 nm) was not irradiated.
  • the organic EL device of the present invention is capable of improving the light extraction efficiency and preventing an organic layer in an organic EL element from degrading, it is favorably used, for example, in display elements, displays, backlight, electrophotography, light sources for illumination, recording light sources, exposure light sources, reading light sources, indicators or signs, sign-boards, interiors, optical communications, and the like.

Abstract

La présente invention concerne un procédé pour la production d'un dispositif d'électroluminescence organique, comprenant : la formation d'un élément d'électroluminescence organique comportant une paire d'électrodes, et une couche organique disposée entre la paire d'électrodes; la formation, sur l'élément d'électroluminescence organique, d'une couche de protection qui protège au moins 40% d'une lumière d'exposition ayant une longueur d'onde prédéterminée; la formation, sur la couche protectrice, d'une couche d'extraction de lumière pour l'extraction de la lumière émise depuis la couche organique; et la formation sur la couche d'extraction de lumière, d'une pluralité de parties concaves par irradiation de la couche d'extraction de lumière avec la lumière d'exposition ayant une longueur d'onde prédéterminée.
PCT/JP2010/052577 2009-02-13 2010-02-15 Dispositif d'électroluminescence organique, et son procédé de production WO2010093062A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-031896 2009-02-13
JP2009031896A JP2010186723A (ja) 2009-02-13 2009-02-13 有機ｅｌ装置及びその製造方法

Publications (1)

Publication Number Publication Date
WO2010093062A1 true WO2010093062A1 (fr) 2010-08-19

Family

ID=42133754

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/052577 WO2010093062A1 (fr) 2009-02-13 2010-02-15 Dispositif d'électroluminescence organique, et son procédé de production

Country Status (2)

Country Link
JP (1) JP2010186723A (fr)
WO (1) WO2010093062A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9880296B2 (en) 2009-06-17 2018-01-30 Regents Of The University Of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111341934A (zh) * 2020-03-05 2020-06-26 武汉华星光电半导体显示技术有限公司 显示面板及显示面板的制备方法

Citations (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE350399C (de) 1919-09-19 1922-03-20 Qu Bernd Ziemert Projektionsschirm
JPS58175693A (ja) 1982-04-08 1983-10-14 Ricoh Co Ltd 高密度光情報記録媒体
JPS5981194A (ja) 1982-11-01 1984-05-10 Tdk Corp 光記録媒体
JPS6018387A (ja) 1983-07-11 1985-01-30 Tdk Corp 光記録媒体
JPS6019587A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6019586A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6035054A (ja) 1983-08-05 1985-02-22 Tdk Corp 光記録媒体
JPS6036190A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6036191A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6044555A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044554A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044389A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6044390A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6047069A (ja) 1983-08-24 1985-03-14 Tdk Corp 光記録媒体
JPS6054892A (ja) 1983-09-05 1985-03-29 Tdk Corp 光記録媒体
JPS63209995A (ja) 1987-02-27 1988-08-31 Fuji Photo Film Co Ltd 光学的情報記録媒体
JPS6438680A (en) 1987-02-26 1989-02-08 Mitsubishi Electric Corp Apparatus for judging frequency agility signal
JPH0215595A (ja) 1987-02-11 1990-01-19 Eastman Kodak Co カソードを改善した電界発光デバイス
JPH02148687A (ja) 1988-10-20 1990-06-07 Eastman Kodak Co Ｅｌストレージディスプレイ装置
JPH03153758A (ja) 1989-10-27 1991-07-01 Phillips Petroleum Co 熱可塑性樹脂配合物
JPH0425492A (ja) 1990-05-21 1992-01-29 Tdk Corp 光記録媒体
JPH0474690A (ja) 1990-07-17 1992-03-10 Ricoh Co Ltd 光情報記録媒体
JPH0529080A (ja) 1990-11-28 1993-02-05 Idemitsu Kosan Co Ltd 有機エレクトロルミネツセンス素子および該素子を用いた発光装置
JPH05121172A (ja) 1991-01-29 1993-05-18 Pioneer Electron Corp 有機エレクトロルミネツセンス素子
JPH0626028A (ja) 1992-06-22 1994-02-01 Kowa Kikai Sekkei Kogyo Kk 表層液吸出装置
JPH06212153A (ja) 1993-01-14 1994-08-02 Toyo Ink Mfg Co Ltd 有機エレクトロルミネッセンス素子
JPH06301356A (ja) 1993-04-16 1994-10-28 Hitachi Ltd 液晶表示装置の駆動回路
JPH07134568A (ja) 1993-11-10 1995-05-23 Kokusai Electric Co Ltd インジケータ付きの表示法及び表示装置
JPH08127174A (ja) 1994-10-31 1996-05-21 Sony Corp 光記録媒体
JPH08234685A (ja) 1995-01-03 1996-09-13 Xerox Corp 光源から画像を生成するための装置
JPH08241047A (ja) 1994-12-14 1996-09-17 Eastman Kodak Co Ｔｆｔ−ｅｌ画素製造方法
JPH09180883A (ja) 1995-10-27 1997-07-11 Toyota Central Res & Dev Lab Inc 微小光共振器型有機電界発光素子
JP2784615B2 (ja) 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
JPH11111463A (ja) 1997-09-30 1999-04-23 Sumitomo Chem Co Ltd 有機エレクトロルミネッセンス素子
JPH11251067A (ja) 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JPH11329748A (ja) 1998-05-20 1999-11-30 Idemitsu Kosan Co Ltd 有機ｅｌ発光素子およびそれを用いた発光装置
JPH11334204A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334205A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334206A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334207A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JP2000043423A (ja) 1998-05-27 2000-02-15 Mitsubishi Chemicals Corp 光学記録媒体
JP2000108513A (ja) 1998-10-05 2000-04-18 Mitsui Chemicals Inc 光記録媒体
JP2000158818A (ja) 1998-12-01 2000-06-13 Mitsui Chemicals Inc 光記録媒体
JP2000196140A (ja) 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
WO2000057676A1 (fr) 1999-03-23 2000-09-28 The University Of Southern California Complexes metalliques cyclometallises en tant que dopants phosphorescents dans des dispositifs electroluminescents organiques
JP3096239B2 (ja) 1996-04-01 2000-10-10 太陽誘電株式会社 光ディスクのランニングｏｐｃ方法及び光ディスク記録再生装置
JP2000286054A (ja) 1999-04-01 2000-10-13 Dainippon Printing Co Ltd Ｅｌ素子
JP2000315580A (ja) 1999-04-30 2000-11-14 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
WO2000070655A2 (fr) 1999-05-13 2000-11-23 The Trustees Of Princeton University Dispositifs electroluminescents organiques a tres haute performance utilisant l'electrophosphorescence
WO2001008230A1 (fr) 1999-07-21 2001-02-01 The Trustees Of Princeton University Agents de croisement intersysteme permettant l'utilisation efficace d'excitons dans des dispositifs luminescents organiques
JP2001102175A (ja) 1999-09-29 2001-04-13 Junji Kido 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの制御方法
WO2001039234A2 (fr) 1999-11-24 2001-05-31 The Trustees Of Princeton University Diode electroluminescente organique comprenant une molecule phosphorescente bleue faisant office d'emetteur
WO2001041512A1 (fr) 1999-12-01 2001-06-07 The Trustees Of Princeton University Complexes de forme l2mx en tant que dopants phosphorescents pour del organiques
JP2001160493A (ja) 1999-12-02 2001-06-12 Junji Kido 電界発光素子
JP2001247859A (ja) 1999-12-27 2001-09-14 Fuji Photo Film Co Ltd オルトメタル化イリジウム錯体からなる発光素子材料、発光素子および新規イリジウム錯体
US6303238B1 (en) 1997-12-01 2001-10-16 The Trustees Of Princeton University OLEDs doped with phosphorescent compounds
JP2001298470A (ja) 2000-04-11 2001-10-26 Dx Antenna Co Ltd データ伝送システム
US6337492B1 (en) 1997-07-11 2002-01-08 Emagin Corporation Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
WO2002002714A2 (fr) 2000-06-30 2002-01-10 E.I. Du Pont De Nemours And Company Composes d'iridium electroluminescents contenant des phenylpyridines fluores, des phenylpyrimidines et des phenylquinolines, et dispositifs fabriques avec ces composes
WO2002015645A1 (fr) 2000-08-11 2002-02-21 The Trustees Of Princeton University Composes organometalliques et electrophosphorescence organique presentant un deplacement d'emission
JP2002056985A (ja) 2000-05-29 2002-02-22 Mitsubishi Chemicals Corp 有機電界発光素子及びその製造方法
JP2002117978A (ja) 2000-07-17 2002-04-19 Fuji Photo Film Co Ltd 発光素子及びイリジウム錯体
EP1211257A2 (fr) 2000-12-01 2002-06-05 Canon Kabushiki Kaisha Composé de coordination métallique, dispositif luminescent et dispositif d'affichage
WO2002044189A1 (fr) 2000-11-30 2002-06-06 Canon Kabushiki Kaisha Element luminescent et afficheur
JP2002170684A (ja) 2000-09-21 2002-06-14 Fuji Photo Film Co Ltd 発光素子及びイリジウム錯体
JP2002173674A (ja) 2000-09-21 2002-06-21 Fuji Photo Film Co Ltd 発光素子および新規レニウム錯体
JP2002203678A (ja) 2000-12-27 2002-07-19 Fuji Photo Film Co Ltd 発光素子
JP2002203679A (ja) 2000-12-27 2002-07-19 Fuji Photo Film Co Ltd 発光素子
JP2002226495A (ja) 2000-11-29 2002-08-14 Canon Inc 金属配位化合物、発光素子及び表示装置
JP2002235076A (ja) 2001-02-09 2002-08-23 Fuji Photo Film Co Ltd 遷移金属錯体及びそれからなる発光素子用材料、並びに発光素子
JP2002234894A (ja) 2000-11-29 2002-08-23 Canon Inc 金属配位化合物、発光素子及び表示装置
JP2002252085A (ja) 2001-02-26 2002-09-06 Junji Kido 有機電界発光素子
JP2002302671A (ja) 2000-02-10 2002-10-18 Fuji Photo Film Co Ltd イリジウム錯体からなる発光素子材料及び発光素子
JP2003045676A (ja) 2001-07-26 2003-02-14 Junji Kido 有機エレクトロルミネッセント素子
JP2003068468A (ja) 2001-08-28 2003-03-07 Matsushita Electric Works Ltd 有機電界発光素子
JP2003123982A (ja) 2001-08-07 2003-04-25 Fuji Photo Film Co Ltd 発光素子及び新規イリジウム錯体
JP2003133074A (ja) 2001-02-01 2003-05-09 Fuji Photo Film Co Ltd 遷移金属錯体及び発光素子
JP2003157981A (ja) 2001-11-22 2003-05-30 Toyota Industries Corp 有機エレクトロルミネッセンスディスプレイパネル及びそのドーパント層の形成方法
JP2003174191A (ja) 2001-06-25 2003-06-20 Toshiba Corp 半導体発光素子及びその製造方法
JP2003203348A (ja) 2001-10-31 2003-07-18 Yamaha Corp 光ディスク記録装置および画像形成方法
JP2003209283A (ja) 2002-01-15 2003-07-25 Toshiba Corp 半導体発光素子及びその製造方法
JP2003217862A (ja) 2002-01-18 2003-07-31 Honda Motor Co Ltd 有機エレクトロルミネッセンス素子
JP2003229278A (ja) 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 発光装置
US20030164679A1 (en) * 2002-02-27 2003-09-04 Takafumi Hamano Organic electroluminescence element and image forming apparatus or portable terminal unit using thereof
US20030164677A1 (en) * 1999-01-29 2003-09-04 Satoshi Miyaguchi Organic electroluminescence (El) cell and a method for producing the same
JP2003272860A (ja) 2002-03-26 2003-09-26 Junji Kido 有機エレクトロルミネッセント素子
JP2004039617A (ja) 2002-02-15 2004-02-05 Eastman Kodak Co スタック型有機電場発光デバイス
JP2004127795A (ja) 2002-10-04 2004-04-22 Sony Corp 表示素子およびこれを用いた表示装置
JP2004214179A (ja) 2002-12-17 2004-07-29 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004221062A (ja) 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004221065A (ja) 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004221068A (ja) 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004327318A (ja) 2003-04-25 2004-11-18 Sumitomo Wiring Syst Ltd コネクタ
JP2004342614A (ja) 2003-05-13 2004-12-02 Eastman Kodak Co カスケード式有機電場発光デバイス
JP2004357791A (ja) 2003-06-02 2004-12-24 Sea Shell:Kk 履物
WO2005019373A2 (fr) 2003-08-19 2005-03-03 Basf Aktiengesellschaft Complexes de metal de transition comportant des ligands de carbene faisant office d'emetteurs pour diodes electroluminescentes organiques (delo)
JP2005072012A (ja) 2003-08-27 2005-03-17 Novaled Gmbh 発光素子とその製造方法
JP2005166637A (ja) 2003-11-10 2005-06-23 Junji Kido 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP2005209643A (ja) 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 発光素子
JP2006256999A (ja) 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd 有機電界発光素子
JP2007019462A (ja) 2005-03-16 2007-01-25 Fujifilm Corp 有機電界発光素子
JP2007084635A (ja) 2005-09-21 2007-04-05 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子用材料、有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2007096259A (ja) 2005-04-25 2007-04-12 Fujifilm Corp 有機電界発光素子
JP2008252056A (ja) 2007-03-05 2008-10-16 Fujifilm Corp 発光素子およびその製造方法ならびに光学素子およびその製造方法

Patent Citations (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE350399C (de) 1919-09-19 1922-03-20 Qu Bernd Ziemert Projektionsschirm
JPS58175693A (ja) 1982-04-08 1983-10-14 Ricoh Co Ltd 高密度光情報記録媒体
JPS5981194A (ja) 1982-11-01 1984-05-10 Tdk Corp 光記録媒体
JPS6018387A (ja) 1983-07-11 1985-01-30 Tdk Corp 光記録媒体
JPS6019587A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6019586A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6035054A (ja) 1983-08-05 1985-02-22 Tdk Corp 光記録媒体
JPS6036190A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6036191A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6044555A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044554A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044389A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6044390A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6047069A (ja) 1983-08-24 1985-03-14 Tdk Corp 光記録媒体
JPS6054892A (ja) 1983-09-05 1985-03-29 Tdk Corp 光記録媒体
JPH0215595A (ja) 1987-02-11 1990-01-19 Eastman Kodak Co カソードを改善した電界発光デバイス
JPS6438680A (en) 1987-02-26 1989-02-08 Mitsubishi Electric Corp Apparatus for judging frequency agility signal
JPS63209995A (ja) 1987-02-27 1988-08-31 Fuji Photo Film Co Ltd 光学的情報記録媒体
JPH02148687A (ja) 1988-10-20 1990-06-07 Eastman Kodak Co Ｅｌストレージディスプレイ装置
JPH03153758A (ja) 1989-10-27 1991-07-01 Phillips Petroleum Co 熱可塑性樹脂配合物
JPH0425492A (ja) 1990-05-21 1992-01-29 Tdk Corp 光記録媒体
JPH0474690A (ja) 1990-07-17 1992-03-10 Ricoh Co Ltd 光情報記録媒体
JPH0529080A (ja) 1990-11-28 1993-02-05 Idemitsu Kosan Co Ltd 有機エレクトロルミネツセンス素子および該素子を用いた発光装置
JPH05121172A (ja) 1991-01-29 1993-05-18 Pioneer Electron Corp 有機エレクトロルミネツセンス素子
JP2784615B2 (ja) 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US6023308A (en) 1991-10-16 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Active matrix device with two TFT's per pixel driven by a third TFT with a crystalline silicon channel
US5828429A (en) 1991-10-16 1998-10-27 Semiconductor Energy Laboratory Co., Lt.D Electro-optical device and method of driving with voltage supply lines parallel to gate lines and two transistors per pixel
JPH0626028A (ja) 1992-06-22 1994-02-01 Kowa Kikai Sekkei Kogyo Kk 表層液吸出装置
JPH06212153A (ja) 1993-01-14 1994-08-02 Toyo Ink Mfg Co Ltd 有機エレクトロルミネッセンス素子
JPH06301356A (ja) 1993-04-16 1994-10-28 Hitachi Ltd 液晶表示装置の駆動回路
JPH07134568A (ja) 1993-11-10 1995-05-23 Kokusai Electric Co Ltd インジケータ付きの表示法及び表示装置
JPH08127174A (ja) 1994-10-31 1996-05-21 Sony Corp 光記録媒体
JPH08241047A (ja) 1994-12-14 1996-09-17 Eastman Kodak Co Ｔｆｔ−ｅｌ画素製造方法
JPH08234685A (ja) 1995-01-03 1996-09-13 Xerox Corp 光源から画像を生成するための装置
JPH09180883A (ja) 1995-10-27 1997-07-11 Toyota Central Res & Dev Lab Inc 微小光共振器型有機電界発光素子
JP3096239B2 (ja) 1996-04-01 2000-10-10 太陽誘電株式会社 光ディスクのランニングｏｐｃ方法及び光ディスク記録再生装置
US6337492B1 (en) 1997-07-11 2002-01-08 Emagin Corporation Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
JPH11111463A (ja) 1997-09-30 1999-04-23 Sumitomo Chem Co Ltd 有機エレクトロルミネッセンス素子
US6303238B1 (en) 1997-12-01 2001-10-16 The Trustees Of Princeton University OLEDs doped with phosphorescent compounds
JPH11251067A (ja) 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JPH11329748A (ja) 1998-05-20 1999-11-30 Idemitsu Kosan Co Ltd 有機ｅｌ発光素子およびそれを用いた発光装置
US6107734A (en) 1998-05-20 2000-08-22 Idemitsu Kosan Co., Ltd. Organic EL light emitting element with light emitting layers and intermediate conductive layer
JPH11334207A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JP2000043423A (ja) 1998-05-27 2000-02-15 Mitsubishi Chemicals Corp 光学記録媒体
JPH11334206A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334205A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334204A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
JP2000108513A (ja) 1998-10-05 2000-04-18 Mitsui Chemicals Inc 光記録媒体
JP2000158818A (ja) 1998-12-01 2000-06-13 Mitsui Chemicals Inc 光記録媒体
JP2000196140A (ja) 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
US20030164677A1 (en) * 1999-01-29 2003-09-04 Satoshi Miyaguchi Organic electroluminescence (El) cell and a method for producing the same
WO2000057676A1 (fr) 1999-03-23 2000-09-28 The University Of Southern California Complexes metalliques cyclometallises en tant que dopants phosphorescents dans des dispositifs electroluminescents organiques
JP2000286054A (ja) 1999-04-01 2000-10-13 Dainippon Printing Co Ltd Ｅｌ素子
JP2000315580A (ja) 1999-04-30 2000-11-14 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
WO2000070655A2 (fr) 1999-05-13 2000-11-23 The Trustees Of Princeton University Dispositifs electroluminescents organiques a tres haute performance utilisant l'electrophosphorescence
WO2001008230A1 (fr) 1999-07-21 2001-02-01 The Trustees Of Princeton University Agents de croisement intersysteme permettant l'utilisation efficace d'excitons dans des dispositifs luminescents organiques
JP2001102175A (ja) 1999-09-29 2001-04-13 Junji Kido 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの制御方法
WO2001039234A2 (fr) 1999-11-24 2001-05-31 The Trustees Of Princeton University Diode electroluminescente organique comprenant une molecule phosphorescente bleue faisant office d'emetteur
WO2001041512A1 (fr) 1999-12-01 2001-06-07 The Trustees Of Princeton University Complexes de forme l2mx en tant que dopants phosphorescents pour del organiques
JP2001160493A (ja) 1999-12-02 2001-06-12 Junji Kido 電界発光素子
JP2001247859A (ja) 1999-12-27 2001-09-14 Fuji Photo Film Co Ltd オルトメタル化イリジウム錯体からなる発光素子材料、発光素子および新規イリジウム錯体
JP2002302671A (ja) 2000-02-10 2002-10-18 Fuji Photo Film Co Ltd イリジウム錯体からなる発光素子材料及び発光素子
JP2001298470A (ja) 2000-04-11 2001-10-26 Dx Antenna Co Ltd データ伝送システム
JP2002056985A (ja) 2000-05-29 2002-02-22 Mitsubishi Chemicals Corp 有機電界発光素子及びその製造方法
WO2002002714A2 (fr) 2000-06-30 2002-01-10 E.I. Du Pont De Nemours And Company Composes d'iridium electroluminescents contenant des phenylpyridines fluores, des phenylpyrimidines et des phenylquinolines, et dispositifs fabriques avec ces composes
JP2002117978A (ja) 2000-07-17 2002-04-19 Fuji Photo Film Co Ltd 発光素子及びイリジウム錯体
WO2002015645A1 (fr) 2000-08-11 2002-02-21 The Trustees Of Princeton University Composes organometalliques et electrophosphorescence organique presentant un deplacement d'emission
JP2002170684A (ja) 2000-09-21 2002-06-14 Fuji Photo Film Co Ltd 発光素子及びイリジウム錯体
JP2002173674A (ja) 2000-09-21 2002-06-21 Fuji Photo Film Co Ltd 発光素子および新規レニウム錯体
JP2002226495A (ja) 2000-11-29 2002-08-14 Canon Inc 金属配位化合物、発光素子及び表示装置
JP2002234894A (ja) 2000-11-29 2002-08-23 Canon Inc 金属配位化合物、発光素子及び表示装置
WO2002044189A1 (fr) 2000-11-30 2002-06-06 Canon Kabushiki Kaisha Element luminescent et afficheur
EP1211257A2 (fr) 2000-12-01 2002-06-05 Canon Kabushiki Kaisha Composé de coordination métallique, dispositif luminescent et dispositif d'affichage
JP2002203678A (ja) 2000-12-27 2002-07-19 Fuji Photo Film Co Ltd 発光素子
JP2002203679A (ja) 2000-12-27 2002-07-19 Fuji Photo Film Co Ltd 発光素子
JP2003133074A (ja) 2001-02-01 2003-05-09 Fuji Photo Film Co Ltd 遷移金属錯体及び発光素子
JP2002235076A (ja) 2001-02-09 2002-08-23 Fuji Photo Film Co Ltd 遷移金属錯体及びそれからなる発光素子用材料、並びに発光素子
JP2002252085A (ja) 2001-02-26 2002-09-06 Junji Kido 有機電界発光素子
JP2003174191A (ja) 2001-06-25 2003-06-20 Toshiba Corp 半導体発光素子及びその製造方法
JP2003045676A (ja) 2001-07-26 2003-02-14 Junji Kido 有機エレクトロルミネッセント素子
JP2003123982A (ja) 2001-08-07 2003-04-25 Fuji Photo Film Co Ltd 発光素子及び新規イリジウム錯体
JP2003068468A (ja) 2001-08-28 2003-03-07 Matsushita Electric Works Ltd 有機電界発光素子
JP2003203348A (ja) 2001-10-31 2003-07-18 Yamaha Corp 光ディスク記録装置および画像形成方法
JP2003157981A (ja) 2001-11-22 2003-05-30 Toyota Industries Corp 有機エレクトロルミネッセンスディスプレイパネル及びそのドーパント層の形成方法
JP2003229278A (ja) 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 発光装置
JP2003209283A (ja) 2002-01-15 2003-07-25 Toshiba Corp 半導体発光素子及びその製造方法
JP2003217862A (ja) 2002-01-18 2003-07-31 Honda Motor Co Ltd 有機エレクトロルミネッセンス素子
JP2004039617A (ja) 2002-02-15 2004-02-05 Eastman Kodak Co スタック型有機電場発光デバイス
US6872472B2 (en) 2002-02-15 2005-03-29 Eastman Kodak Company Providing an organic electroluminescent device having stacked electroluminescent units
US20030164679A1 (en) * 2002-02-27 2003-09-04 Takafumi Hamano Organic electroluminescence element and image forming apparatus or portable terminal unit using thereof
JP2003272860A (ja) 2002-03-26 2003-09-26 Junji Kido 有機エレクトロルミネッセント素子
JP2004127795A (ja) 2002-10-04 2004-04-22 Sony Corp 表示素子およびこれを用いた表示装置
JP2004214179A (ja) 2002-12-17 2004-07-29 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004221062A (ja) 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004221065A (ja) 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004221068A (ja) 2002-12-27 2004-08-05 Fuji Photo Film Co Ltd 有機電界発光素子
JP2004327318A (ja) 2003-04-25 2004-11-18 Sumitomo Wiring Syst Ltd コネクタ
JP2004342614A (ja) 2003-05-13 2004-12-02 Eastman Kodak Co カスケード式有機電場発光デバイス
JP2004357791A (ja) 2003-06-02 2004-12-24 Sea Shell:Kk 履物
WO2005019373A2 (fr) 2003-08-19 2005-03-03 Basf Aktiengesellschaft Complexes de metal de transition comportant des ligands de carbene faisant office d'emetteurs pour diodes electroluminescentes organiques (delo)
JP2005072012A (ja) 2003-08-27 2005-03-17 Novaled Gmbh 発光素子とその製造方法
JP2005166637A (ja) 2003-11-10 2005-06-23 Junji Kido 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP2005209643A (ja) 2003-12-26 2005-08-04 Semiconductor Energy Lab Co Ltd 発光素子
JP2006256999A (ja) 2005-03-16 2006-09-28 Fuji Photo Film Co Ltd 有機電界発光素子
JP2007019462A (ja) 2005-03-16 2007-01-25 Fujifilm Corp 有機電界発光素子
JP2007096259A (ja) 2005-04-25 2007-04-12 Fujifilm Corp 有機電界発光素子
JP2007084635A (ja) 2005-09-21 2007-04-05 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子用材料、有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2008252056A (ja) 2007-03-05 2008-10-16 Fujifilm Corp 発光素子およびその製造方法ならびに光学素子およびその製造方法

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
"Comprehensive. Coordination Chemistry", 1987, PERGAMON PRESS LTD.
"Photochemistry and Photophysics of Coordination Compounds", 1987, SPRINGER-VERLAG CO.
"YUHKI KINZOKU KAGAKU-KISO TO OUYGU", 1982, SHOKABO PUBLISHING CO.
"Yuhki Kinzoku Kagaku-Kiso To Ouyou", 1982, SHOKABOPUBLISHING CO.
JOURNAL OF CHEMICAL SOCIETY OF JAPAN, October 1992 (1992-10-01), pages 1,141
YUTAKA SAWADA: "Tomei Denkyoku-Maku no Shintenksi (New Developments of Transparent Electroconductive Films )", 1999, CMC PUBLISHING CO.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9880296B2 (en) 2009-06-17 2018-01-30 Regents Of The University Of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics

Also Published As

Publication number Publication date
JP2010186723A (ja) 2010-08-26

Similar Documents

Publication Publication Date Title
US8288763B2 (en) Organic electroluminescence device
JP5288967B2 (ja) 発光素子及びその製造方法、並びに該発光素子を備えるディスプレイ
JP5530087B2 (ja) 発光素子
JP5427528B2 (ja) 光学部材
US8018145B2 (en) Organic electroluminescence device
JP5288966B2 (ja) 発光素子及びその製造方法、並びに該発光素子を備えるディスプレイ
WO2010058716A1 (fr) Élément électroluminescent organique
US20110062476A1 (en) Light-extraction member, organic el element, and method for producing the organic el element
JP5063007B2 (ja) 有機電界発光素子
JP2011060549A (ja) 有機ｅｌ装置用光学部材及び有機ｅｌ装置
JP2010230714A (ja) 光学シート及びその製造方法
JP5473506B2 (ja) カラーフィルタ及び発光表示素子
JP4855286B2 (ja) 有機電界発光素子の製造方法
WO2010093062A1 (fr) Dispositif d'électroluminescence organique, et son procédé de production
JP5898398B2 (ja) 有機エレクトロルミネッセンス発光装置の製造方法
JP5427527B2 (ja) 有機発光表示装置及び有機発光表示装置の製造方法
JP2008108709A (ja) 有機発光素子
JP2010277956A (ja) 有機電界発光表示装置
JP2010078813A (ja) 発光素子、該発光素子を備えるディスプレイ、及びその製造方法
JP2008311076A (ja) 有機電界発光素子およびその製造方法
JP2008108712A (ja) 有機発光素子
JP2011060552A (ja) 有機ｅｌ素子
WO2012161154A1 (fr) Élément électroluminescent organique et procédé de fabrication correspondant

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10706787

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10706787

Country of ref document: EP

Kind code of ref document: A1