TWI570879B - 半導體總成及晶粒堆疊總成 - Google Patents

半導體總成及晶粒堆疊總成 Download PDF

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TWI570879B
TWI570879B TW099120462A TW99120462A TWI570879B TW I570879 B TWI570879 B TW I570879B TW 099120462 A TW099120462 A TW 099120462A TW 99120462 A TW99120462 A TW 99120462A TW I570879 B TWI570879 B TW I570879B
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雷納度 高
格蘭特 維拉芬森席歐
傑佛瑞 李爾
西門 麥克艾瑞爾
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英維瑟斯公司
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Description

半導體總成及晶粒堆疊總成
本申請案根據R.公司等於2009年6月26日所提出名稱為“用於以鋸齒組態堆疊之晶粒之電連接”之美國暫時申請案61/220,986，且併提於此以供參考。
本發明係有關積體電路晶片之電連接，特別是堆疊晶粒之電互連。
典型的半導體晶粒具有形成積體電路之前(主動)側、背側及側壁。側壁與前側相接於前緣，並與後側相接於後緣。半導體晶粒通常設有互連墊(晶粒墊)，其位於晶粒上電路之電互連前側，裝置中另一電路佈設晶粒。通常，晶粒墊包含諸如銅或鋁之導電或金屬化之金屬。
所提供某些晶粒在沿一或更多晶粒邊緣之前側具有晶粒墊，且此等均稱為周緣墊晶粒。所提供其他晶粒墊在接近晶粒中央之前側上配置成一行或兩行，且此等均稱為中央墊晶粒。某些晶粒具有配置成區域陣列之墊。然而，晶粒墊可如所提供，配置於晶粒中，該晶粒可“重選路”以提供適當的互連墊配置於晶粒之一或更多邊緣。
曾提議多種方法來增加積體電路晶片封裝中之主動半導體電路之密度，惟將封裝尺寸(封裝映罩表面、封裝厚度)減至最小。於製造具有較小映罩表面之高密度封裝之方法中，互疊及安裝相同或不同功能之二或更多半導體晶粒於封裝基板上。
S. McElrea等人於2008年五月20日提出申請，名稱為“電連接堆疊總成”之美國申請案12/124,077說明一種堆疊晶粒組態，其中晶粒上之互連墊藉導電互連材料之引線電連接。於某些組態中，堆疊中之相鄰晶粒設有沿晶粒邊緣配置於前側之互連墊，且上方晶粒之邊緣之緣相對於其下方之晶粒之邊緣錯位。該錯位顯示下晶粒上互連墊區域之至少一部分，俾下晶粒上之墊可用來與位於上方之晶粒之墊電連接。導電互連材料係就像例如可固化導電環氧樹脂之導電聚合物。較大堆疊總成可藉由於模組設計中建構錯位堆疊晶粒單元及接著堆疊此等單元製造。一個此種模組單元可藉對齊及連接之個別模組單元之互連端反轉及互疊安裝；所形成兩層總成提供鋸齒組態。
T. Caskey等人於2008年五月20日提出申請，名稱為“藉由脈衝調配形成之電互連”之美國申請案12/124,097說明一種堆疊中晶粒電互連方法，及藉由於一系列脈衝中原位沉積電互連材料以形成連續電互連之具有基板之堆疊晶粒。互連材料可為可固化材料，其可在未固化或局部固化狀態下沉積；且該材料可於調配後之中間步驟局部或額外固化；且可在完成調配時，完全固化。適當互連材料包含充填粒子形式之導電材料之聚合物，就像例如充填金屬聚合物，其例如包含金屬充填環氧樹脂、金屬充填熱固聚合物、金屬充填熱塑聚合物或導電油墨。
於本發明之一般態樣中，特點在於安裝並隆起於支撐上方，以及電連接於支撐中之電路之晶粒(或晶粒堆疊)。導電材料柱形成於支撐之安裝側之一組接合墊上，且隆起晶粒(隆起晶粒堆疊之至少一晶粒)藉使晶粒上互連墊接觸柱之導電材料之引線電連接於支撐，並透過此等柱電連接於該支撐。
於某些實施例中，下晶粒或下晶粒堆疊或半導體封裝位於支撐與隆起晶粒間；且於某些實施例中，下晶粒或下晶粒堆疊或半導體封裝電連接於支撐。於某些實施例中，下晶粒堆疊係下成層錯位堆疊晶粒總成，且第一層中之晶粒以晶粒對晶粒方式電連接，又，下層藉使晶粒上互連墊接觸柱之導電材料之引線以及一組支撐上之接合墊，電連接於支撐。
於某些實施例中，隆起晶粒堆疊係成層錯位堆疊晶粒總成，其中晶粒層之互連緣面對第一方向，且互連晶粒墊緣對準柱。
於本發明各個實施例中，特點在於以鋸齒組態成層錯位堆疊晶粒總成，其中第一(下)層之互連緣面對第一方向，且堆疊於第一層之第二(上)層之互連緣面對異於第一方向之第二方向。第二層互連緣方向可正對或正交第一層互連緣方向。第一層中之晶粒以晶粒對晶粒方式電連接，又，該層藉使晶粒上互連墊接觸之導電材料之引線以及一組支撐上之接合墊，電連接於支撐。導電材料柱形成於第二組接合墊上，且第二層之晶粒以晶粒對晶粒方式電互連，又該層藉使晶粒上互連墊接觸柱之導電材料之引線電連接於支撐，並透過多數柱電連接於基板。
導電材料包含於聚合物基質中的金屬粒子。適當材料包含能以可流動形式沉積且之後硬化或容許硬化以形成導體之材料。互連材料可為可固化材料，且可沉積成未固化或局部固化狀態；且該材料可於沉積後之中間階段局部或額外固化，並可在沉積完成時完全固化。適當的互連材料包含充填粒子形式之導電材料之聚合物，例如金屬充填聚合物，其例如包含金屬充填環氧樹脂、金屬充填熱固化聚合物、金屬充填熱塑聚合物以及導電油墨。
互連材料可藉適於特定材料之任何技術沉積。於某些實施例中，材料可使用噴嘴或針調配或噴灑成霧，或網版印刷或噴墨印刷；材料可透過噴射或噴嘴連續調配或脈動調配例如成滴狀。
於本發明之另一一般態樣中，特點在於一種藉由以下步驟將安裝並隆起於支撐上方之晶粒(或一疊晶粒)電連接於支撐中之電路之方法：於支撐之安裝側之一組接合墊上形成多數導電材料柱；以及形成導電材料之引線，各該引線與隆起晶粒(或在隆起疊之晶粒的至少一晶粒)上之互連晶粒墊及柱接觸。於某些實施例中，引線跨柱與互連晶粒墊間之間隙。於某些實施例中，形成柱包括沉積可固化導電柱材料於接合墊上及固化沉積之引線材料。於某些實施例中，形成引線包括沉積與柱接觸之可固化導電引線材料，以及固化沉積之引線材料。
於本發明之一般態樣中，特點在於一種藉由以下步驟製造以鋸齒組態成層錯位堆疊之晶粒總成之方法：堆疊或安裝第一(下)層於支撐上，配置成第一(下)層之互連緣面對第一方向，俾第一層中至少最下方晶粒上之互連墊與該支撐上之第一組接合墊對齊；晶粒對晶粒電互連該第一層中之晶粒，並藉由形成第一層導電材料引線，電連接該層於該支撐，該第一層導電材料引線之每一者與該晶粒上之至少一互連墊以及該等第一組接合墊接觸；堆疊或安裝第二(上)層於該第一層上方，配置成第二(上)層之互連緣面對第二方向；形成導電材料柱於該支撐上之第二組接合墊上；以及形成導電材料之第二(上)層引線，各該引線與該第二(上)層中至少一晶粒上之互連晶粒墊及該柱接觸。於某些實施例中，形成第一層導電材料引線包括沉積可固化導電引線材料，該導電引線材料與至少一下層晶粒上之晶粒墊接觸，以及固化沉積之引線材料。於某些實施例中，形成第二層引線包括跨該柱與該互連晶粒墊間之間隙形成引線。於某些實施例中，形成柱包括沉積可固化導電柱材料於接合墊及固化沉積之引線材料。於某些實施例中，形成第二層導電材料引線包括沉積可固化導電引線材料，該導電引線材料與至少一上層晶粒上之晶粒墊接觸及固化沉積之引線材料。柱、第一層引線及第二層引線可由相同或不同材料形成。
於某些實施例中，製造成層錯位堆疊之晶粒總成之方法包括於堆疊或安裝第一層之後及形成第一層引線之前，以保形介電塗層塗布該總成，並形成多數開口於待與該等第一層引線接觸之至少經選擇之晶粒墊及接合墊。於某些實施例中，製造成層錯位堆疊之晶粒總成之方法包括於堆疊或安裝第二層之後及形成該等柱之前，以保形介電塗層塗布該總成，並形成多數開口於待與該等柱接觸之至少經選擇之第二層晶粒墊及接合墊。
現在參考說明本發明之選擇性實施例之圖式，進一步說明本發明。此等圖式顯示本發明之特點及其與其他特點和構造間之關係，惟其未按比例繪製。為改進顯示之清晰度，於圖式中顯示本發明之實施例，對應於其他圖式之元件的元件並未全部特別另標元件符號，雖則其在所有圖式中均可馬上辨識。亦為顯示之清晰度，於圖式中未顯示某些特點，畢竟其等對本發明瞭解不必要。於說明中的某些點，可參考圖式中諸視點之位向，使用“上方”、“下方”、“上”、“下”、“頂部”、“底部”等，此等用辭不擬限制使用中裝置之位向。
第1A圖以俯視圖顯示安裝於支撐上之錯位堆疊晶粒10之配置之圖式，各晶粒具有互連墊，其配置在鄰接前晶粒緣之一邊緣；且第1B圖如第1A圖中1B-1B所示，俯視顯示安裝於支撐上之堆疊。於此例子中，堆疊包含七個晶粒141,142,143,144,145,146,147，各安裝成晶粒之主動側背離支撐17。參考堆疊中之最上方晶粒147，例如，互連墊148位在沿前晶粒緣149之一行142中。此例子中之晶粒147藉電絕緣保形塗層144覆蓋於所有表面(背表面、前表面及側壁)上，該電絕緣保形塗層144設有露出互連墊148之開口145。如於此等例子中，堆疊中之連續塗佈直接靠在另一個上，俾上晶粒之背側上之塗層可接觸下晶粒之前側上之塗層。於其他例子中，保形塗層可覆蓋較所有晶粒表面小，或者其可僅覆蓋一或更多晶粒表面之一部分；一般而言，電絕緣保形塗層可至少形成於須要與其他特點或表面電絕緣之表面或特點，此等其他特點或表面可與完成之總成接觸。任選地或額外地，晶粒附接膜可層疊於一或更多晶粒之背側。
於第1A及1B圖所示例子中，各晶粒具有位於沿一前晶粒緣(“互連”緣)之邊緣之互連墊，且堆疊中之連續晶粒配置成其個別互連緣面朝堆疊之相同面。堆疊中之連續晶粒沿正交晶粒緣之方向位移(錯位)，多數墊沿晶粒緣，且於在此所示之例子中，此錯位使諸墊在各下晶粒中完全露出。該組態提供梯狀晶粒堆疊，且電連接形成於此等梯級上方。
堆疊安裝在支撐17(例如封裝基板)上，該支撐17具有一行露出於晶粒安裝表面171之接合位置172之行173。接合位置連接於(或構成一部分)支撐中之電路(未圖示)。該晶粒附著於基板之晶粒安裝表面171，並配置成第一(最下方)晶粒141之前側壁沿接合位置172之行173對齊。於在此所示例子中，最下方晶粒之前側壁重疊接合位置至很小程度；於其他例子中，最下方晶粒之前側壁可從接合位置之行後退，或可重疊接合位置至較大程度。如於此等例子中，第一晶粒之塗佈背側可直接接觸晶粒安裝表面171，並可用來附著該堆疊於支撐。任選地，晶粒附接膜可層疊於第一晶粒之背側，以附著該堆疊於支撐。
如第1C圖所示，於堆疊中，晶粒電連接(晶粒對晶粒)，且堆疊藉配設成與例如墊148及接合墊172接觸之互連材料之引線174，電連接於支撐。互連材料可為導電聚合物，就像包含導電材料之粒子之聚合物基質。該材料可為諸如可固化聚合物之可固化材料，例如就像是導電環氧樹脂(例如充填銀之環氧樹脂)；且互連可藉由將未固化之材料形成為預定圖案，且此後固化材料以獲得與接合墊及接合位置之電接觸，並確保其間引線之完整性來形成。該材料可為導電油墨，其可於載體中包含導電粒子，且其可或不可包含聚合物基質。
如於美國申請案12/124,097中所說明，可藉由於模組設計中建構錯位晶粒堆疊單元，並接著堆疊這些單元，製成較大堆疊晶粒總成。可藉對齊及連接之個別模組單元，反轉及互疊安裝一個此種模組單元；例如依第2A,2B圖所示，形成之二層總成提供鋸齒組態。第一錯位晶粒堆疊構成第一模組單元(第一層)210，其可安裝於及電連接於支撐217上之接合墊272；且可藉對齊及連接之互連214,224之端部，反轉及安裝第二模組單元(第二層)212於第一層210上方。於第2A圖中舉例顯示形成之總成。一隔件(於第2A圖中未圖示)可設在第一與第二層間。如可理解，在第一與第二模組單元相同情況下，當第二單元反轉時，互接端之個別墊行反平行；亦即，現在，第一單元上之第一互連對齊第二晶粒上之最後互連。於此種組態中，可能需要重選路電路來將適當的個別特點連接於晶粒上。重選路電路可設在第一單元上之頂部晶粒之主動層；或者，在包含隔件情況下，該隔件可構成一插入件(於第2A圖中未圖示)，其包含一或更多介電層及一或更多導電重選路層。第2B圖顯示第二層安裝於第一層上方惟未翻轉之組態。在此，第二層220之互連224之端部接近第一層210中頂部晶粒之相對緣。包含至少一介電層216(就像例如玻璃)及至少一圖型化導電層244之插入件位於諸模組單元間，以提供從第一層210之一緣上之互連214之端部至第二層220之一(相對)緣上之互連224之端部之重選路。
可利用特定互連材料之流變性質(就像例如黏度或觸變性)來提供具有控制形狀之沉積。特別是，對某些材料而言，在調配脈衝完成後的一段時間內，沉積團塊之一部分可保持與沉積工具接觸，且可在分離完成前移動該工具。在未固化狀態下，具有較高黏度及觸變性之導電聚合物材料可在沉積期間，藉由於調配脈衝完成後不久移動沉積工具，予以成形，以沿選擇方向拉出材料之“尾部”，形成具有選擇形狀之互連。結果，可藉工具之方向及移動速率及材料之流變性質判定沉積團塊之形狀。
如以上所述，第1A,1B,1C,2A及2B圖所示例子中之錯位晶粒堆疊如圖示具有七個晶粒。考慮具有其他數目之晶粒之錯位堆疊，且通常較常見的是偶數晶粒(例如每一錯位堆疊有四個晶粒或八個晶粒)。
參考第3A圖，例如依圖示附接液滴304於支撐320(諸如晶粒上之墊，或基板上之接合墊)上之電接觸328。於圖示例子中，在液滴形成期間，使工具梢朝向電接觸328，並調配材料團塊於接觸。接著，當材料團塊仍與工具梢接觸時，垂直移動離開目標以向上拉出材料“尾巴”。最後，液滴團塊與工具梢分離，且形成之液滴304具有大致錐形。適於形成成形液滴之材料包含導電環氧樹脂(充填金屬之環氧樹脂)，其在未固化狀態下，具有約30000cps或更大的黏度及/或約6.5或更大的觸變指數。如可瞭解，黏度及/或觸變度不得太高，否則，材料沒有用，否則其無法與互接端子良好接觸。
以上參考及併提於此供參考之美國申請案12/124,097說明形成一系列此種大致錐形之自由立起液滴，此等液滴於晶粒堆疊面上相互鄰接，提供接觸互連端子之材料柱。此種柱組態可在垂直相鄰之晶粒間有很大空隙，以致互連引線須在無側面支撐下垂直越過該間時特別有用。如以上參考及併提於此供參考之美國申請案12/124,097所說明，這可提供於具有相互安裝及藉隔件分隔之多數晶粒堆疊中；或藉晶粒之交錯配置(亦即，在待連接晶粒間之間隙大約等於(或略微超過)夾裝之錯位晶粒之厚度情況下)提供；或於具有長形堆疊晶粒之晶粒堆疊中，各晶粒在位向上相對於下方之晶粒成90°。
如於美國申請案12/124,097中進一步說明，工具可在異於垂直遠離目標之其他方向中移動，且可形成各種有用液滴。例如參考第3B圖，如圖所示，晶粒錯位堆疊341,342,343,344安裝於基板317上，該基板317在堆疊安裝側具有電連接位置(諸如接合墊)372。此例中的所有晶粒具有例如周緣墊348，其沿晶粒之邊緣，配置於互接緣。堆疊中的每一晶粒可相對於下方之晶粒位移，露出墊區域之至少一部分(於圖示例子中露出墊的全部)。如圖示，第一互接液滴314將第一晶粒341上之晶粒墊348連接至基板317中的接合墊372。為形成液滴，使工具朝向第一目標接合墊，並將材料團塊調配於接合墊。接著，當材料團塊仍與工具梢部接觸時，該工具移動，首先向上，側面離開第一目標，接著向下，側面朝晶粒墊348(如斷箭所示)，以成弧形朝第二墊拉出材料“尾部”。可同樣形成第二及後續液滴以連接連續晶粒上之墊，形成晶粒對晶粒互連。
根據第4A、4B及4C圖所示發明實施例，以鋸齒組態成層錯位堆疊之晶粒總成安裝及電連接於支撐。於此例子中，包含各具有四個錯位堆疊晶粒之二層之堆疊晶粒總成428安裝於支撐(諸如封裝基板)447。於本例子中，下層包含晶粒441,442,443,444；且上層包含晶粒445,446,447,448。且各晶粒之後側層疊晶粒附接膜(分別為431,432,433,434,435,436,437,438)。互接晶粒墊(例如548；648)配置於接近各晶粒之互接緣之晶粒緣。互接材料之引線404形成於第一層之互接面，其接觸互接晶粒墊(例如548)以形成晶粒對晶粒互連，並接觸支撐上第一行之接合墊472，以形成層對支撐電連接。互連材料之柱502形成接觸支撐上第二行之接合墊474；且互連材料之引線504形成於第二層之互連面上方，接觸互接晶粒墊(例如648)以形成晶粒對晶粒互連，並接觸柱502，以形成層對支撐電連接。
基板477於面對堆疊安裝面之表面包含焊墊476，其用來將總成二級電連接(例如作為焊墊格柵陣列或球形格柵陣列或標記陣列)於裝置中的下層電路(未顯示於此等圖中)，其中佈置總成供使用。接合墊472,474及焊墊476連接於圖案化之導電層，並於基板中為一或更多介電層所分隔，且基板中之圖案化導電層藉貫穿單一或多數介電層之通孔連接。
如第4A、4B及4C圖所示，用來建構以鋸齒組態成層錯位堆疊之晶粒總成安裝及電連接於支撐之程序例子之步驟顯示於第5A、5B及5C圖；第6A、6B及6C圖；第7A、7B及7C圖；第8A、8B及8C圖；以及第9A、9B及9C圖。以下係此種程序之說明。
用於晶粒陣列之習知半導體電路形成於半導體晶圓之主動側(前側)。通常藉由背部硏磨薄化，且晶粒附接膜安裝於薄化晶圓之背側。接著，晶粒藉由沿陣列中之晶粒間之切割道切割(鋸割)單一化。
使用諸如拾取及安置工具，將單一化的晶粒堆疊於錯位配置中。於在此顯示之例子中，將構成第一層420之第一錯位晶粒堆疊(於此例子中為四個)安裝於基板477之堆疊安裝表面。第一層定位成最下方晶粒441之晶粒附接側璧對齊(鄰接或局部重疊於)基板上第一接合墊行中的接合墊472。此後，該總成塗以介電塗層544。介電塗層之材料可為多種材料的任一種，並可使用適於特定材料之多種技術之任一種形成。適當的材料包含有機聚合物，且特別適當之材料包含聚對二甲苯，其藉由蒸汽形式之先驅分子之原位聚合物化形成。塗層覆蓋在塗佈期間暴露於材料之所有表面，包含待形成電連接之區域。因此，開口例如藉由選擇性雷射磨滅形成於選擇區域上方。例如，開口545透過塗層形成以露出基板上第一行之互連晶粒墊(例如548)及接合墊(例如472)。完成之架構顯示於第5A圖中，並局部放大於第5B,5C圖。
此後，藉由形成與互連晶粒墊以及與接合墊472接觸之引線404，形成於第一層420中晶粒之互連以及第一層與基板之連接。於第6A圖中顯示並於第6B,6C圖中局部放大顯示完成之建構。介電塗層用來將可藉導電引線接觸，惟不欲電接觸之特點絕緣，此等特點像是邊緣，晶粒墊沿其安置，以及相鄰晶粒緣和側壁。如以上所述，導電材料包含可以流動形式沉積且此後硬化或容許硬化以形成導體之材料。導電材料可為可固化材料，且可沉積成未固化或局部固化狀態；且該材料可於沉積後之中間階段局部或額外固化，並可在沉積完成時完全固化。適當的互連材料包含充填粒子形式之導電材料之聚合物，就像例如金屬充填聚合物，其例如包含金屬充填環氧樹脂、金屬充填熱固化聚合物、金屬充填熱塑聚合物以及導電油墨。
互接材料可藉由適於特定材料之任何技術沉積。於某些實施例中，材料可使用噴嘴或針調配或噴灑成霧，或網版印刷或噴墨印刷；材料可透過噴射或噴嘴連續調配或脈動調配例如成滴狀。在調配後，固化材料以完成互連。
此後，將構成第二層422之第二錯位晶粒堆疊(於本例子中為四個)安裝於第一層420之上表面。於此例子中，第二層定位成最下方晶粒445之晶粒附接側壁懸於第一層上，且相對於基板上第二接合墊行中之接合墊474垂直對齊。此後，所形成之總成塗以第二介電塗層644。第二介電塗層之材料可為多種材料之任一種，且可使用適於特定材料之多種技術之任一種形成。第二塗層材料可與第一塗層材料相同或不同。適當材料包含有機聚合物，且特別是適當材料包含聚對二甲苯，其藉由蒸汽形式之先驅分子之原位聚合物化形成。塗層覆蓋在塗佈期間暴露於材料之所有表面，包含待形成電連接之區域。因此，開口例如藉由選擇性雷射磨滅形成於選擇區域上方。例如，開口645透過塗層形成以露出基板上第一行之互連晶粒墊(例如648)及接合墊(例如474)。完成之架構顯示於第7A圖中，並局部放大於第7B,7C圖。
此後，導電材料之柱502形成與基板上第二行中之接合墊474接觸。完成之架構顯示於第8A圖中，並局部放大於第8B,8C圖。如以上所述，導電材料包含可以可流動方式沉積，且此後硬化或容許硬化以形成導體之材料。導電材料可為可固化材料，且可沉積成未固化或局部固化狀態；且該材料可於沉積後之中間階段局部或額外固化，並可在沉積完成時完全固化。適當的導電材料包含充填粒子形式之導電材料之聚合物，就像例如金屬充填聚合物，其例如包含金屬充填環氧樹脂、金屬充填熱固化聚合物、金屬充填熱塑聚合物以及導電油墨。在調配時及最後固化以前，選擇具有適於維持柱高度及一般形狀之適當材料。於特定實施例中，柱具有大致錐形，範圍約在190-310μm間之高度，且基底半徑範圍例如約在160-180μm間。依材料之性質而定，可製成具有較大的高度對半徑比例。在沉積及固化程序期間可形成如第8B圖中512所示，圍繞基底之環氧樹脂“印流”；惟於某些實施例中，這可能不是理想的特點。
用於導電柱之適當材料之特定例子包含OrmetCircuits公司以“800,700,500,400,200系列油墨”銷售之導電糊。此等材料包含5-15 wt%之環氧樹脂混合物以及高達5 wt%之丁基乙甘醇；其餘包含各種Cu,Bi,Sn及Ag粒子之比率。
用於導電柱之適當材料之其他特定例子包含Lord公司以諸如“Thermoset MD-141”“晶粒附接黏著劑”銷售之導電糊。此等材料包含約10 wt%之酚醛清漆樹脂、約5 wt%之乙醇乙醚、約5 wt%之環氧樹脂以及約80 wt%之銀。
用於柱之互接材料可藉由適於特定材料及柱形狀之任何技術沉積。於某些實施例中，材料可使用噴嘴或針調配或噴灑成霧，或網版印刷或噴墨印刷；材料可透過噴射或噴嘴連續調配或脈動調配例如成滴狀。在調配後，固化柱材料以完成柱之機械完整性。
此後，藉由形成與互連晶粒墊以及與柱502接觸之引線504，形成於第二層422中晶粒之互連以及第二層與基板之連接(藉柱502)。於第9A圖中顯示並於第9B,9C圖中局部放大顯示完成之建構。介電塗層用來將可藉導電引線接觸，惟不欲電接觸之特點絕緣，此等特點像是邊緣，晶粒墊沿其安置，以及相鄰晶粒緣和側壁。如以上所述，導電材料包含可以流動形式沉積且此後硬化或容許硬化以形成導體之材料。導電材料可為可固化材料，且可沉積成未固化或局部固化狀態；且該材料可於沉積後之中間階段局部或額外固化，並可在沉積完成時完全固化。適當的互連材料包含充填粒子形式之導電材料之聚合物，就像例如金屬充填聚合物，其例如包含金屬充填環氧樹脂、金屬充填熱固化聚合物、金屬充填熱塑聚合物以及導電油墨。在調配之後，最後固化以前，選擇具有適於維持其跨晶粒445之側壁與柱梢間之間隙之形狀之適當流變性質的適當材料。
互接材料可藉由適於特定材料之任何技術沉積。於某些實施例中，材料可使用噴嘴或針調配或噴灑成霧，或網版印刷或噴墨印刷；材料可透過噴射或噴嘴連續調配或脈動調配例如成滴狀。
第10A及10B圖係顯示於第一層420中進行晶粒對晶粒互連及第一層420對基板上接合墊472之導電引線404之部分視圖。
第11A及11B圖係顯示於第二層422中進行晶粒對晶粒互連及第二層422對基板上柱502之連接之導電引線504之部分視圖。
第12A、12B、12C圖係顯示於第二層422中進行晶粒對晶粒互連及第一層422對基板上接合墊474上之柱502之導電引線504之形成步驟之部分視圖。
其他實施例在本發明之範圍內。
例如，圖式顯示總成，其中，成層晶粒堆疊(於此等例子中，上錯位晶粒堆疊)隆起於支撐上方；且佈設柱以用來電連接隆起之錯位晶粒堆疊於支撐上之接合墊。於所考慮其他實施例中，佈設柱以用來電連接隆起之晶粒或晶粒堆疊(錯位或非錯位)於支撐上之接合墊。且例如，圖式顯示總成，其中，下錯位晶粒堆疊位於上堆疊與支撐間。特別是，於圖示之例子中，下錯位晶粒堆疊安裝於支撐，且上堆疊安裝於下堆疊，俾上堆疊之隆起藉下堆疊之高度強施於基板表面(或下堆疊之高度)上方。於所考慮其他實施例中，上堆疊可安裝在異於下堆疊之某些特點上方，就像例如下晶粒或下非錯位晶粒堆疊或封裝上方。
例如，圖示之鋸齒狀成層錯位晶粒堆疊總成亦具有兩層(下層及上層)，且各層如圖示具有四個晶粒。考慮兩層以上之總成，並考慮具有其他數目之晶粒之層。例如，一或更多的額外層可被堆疊在第二層上。例如，一或更多層可具有四個以上或以下之晶粒，且於某些實施例中，一或更多層可例如具有八個晶粒。
如圖所示，上及下層中之晶粒亦具有相同長度。此種情況可例如適用於所有晶粒具有相同類型或相同功能情況下。成層堆疊之每一者例如包含同型之記憶晶粒。考慮其他晶粒型。例如，具有不同功能之晶粒可包含於一層內；或者，例如，一層中之晶粒可具有相同功能，而其他層中之晶粒則具有一或更多不同功能。結果，於所考慮之某些實施例中，晶粒可大小不同；或一層中之晶粒可大小相同，而其他層中之晶粒則具有不同尺寸。
於如圖示例子中，上層中之最下方晶粒之互接緣亦向外延伸超過下特點之下緣(亦即於圖示之例子中，超過下層中最上方晶粒之下晶粒緣)。於另一考慮之例子中，上堆疊中之互連緣可垂直對齊或可從下特點之下緣向內。
於例如圖示例子中，介電塗層亦自堆疊中所有晶粒上之互連墊移除。這容許所有墊接觸後續形成之引線。可能較佳係形成僅與墊之選擇者連接之電連接。如於以上參考且併提於此供參考之美國申請案12/124,077中所圖示及討論，開口可形成於任何晶粒中所選墊的上方，或對應堆疊中連續晶粒上之墊選擇，留下為介電塗層所覆蓋且對電連接無用之墊。且，例如，塗層如說明形成於多數相中，各相出現在層之每一者建構後。於某些所考慮之實施例中，塗層應用於形成兩個(或更多)以後之單一相中。在上層位於下層上方俾下層中之互連晶粒墊可便於用來移除(例如藉由雷射磨滅)情況下，這可能特別理想。
於例如圖示例子中，說明在二調配操作中進行柱之形成，及連接隆起(上)晶粒或晶粒堆疊於柱之引線之形成。於某些實施例中，可於連續操作中，藉由調配及調配工具之適當控制，形成各柱及對應引線。
10．．．錯位堆疊晶粒
141．．．最下方晶粒
143,144,146．．．晶粒
142,173．．．行
145．．．開口
147．．．最上方晶粒
148．．．互連墊
149．．．前晶粒緣
17,217,320,447．．．支撐
171．．．晶粒安裝表面
172．．．接合位置
174．．．引線
210．．．第一模組單元(第一層)
212．．．第二模組單元(第二層)
214,224．．．互連
220．．．第二層
244．．．導電層
272．．．接合墊
304．．．液滴
317．．．基板
328．．．接觸
341,342,343,344．．．晶粒
348．．．周緣墊
372．．．接合墊
404．．．引線
420．．．第一層
428．．．堆疊晶粒總成
431,432,433,434,435,436,437,438．．．晶粒附接膜
441,442,443,444．．．晶粒
445,446,447,448．．．晶粒
472,474．．．接合墊
476．．．焊墊
477．．．基板
502．．．柱
504．．．引線
544,644．．．介電塗層
545,645．．．開口
548,648．．．互連晶粒墊
第1A及1B圖係以俯視圖(第1A圖)及剖視圖(第1B圖)顯示安裝於支撐上之錯位晶粒堆疊之圖式。
第1C圖係如第1B圖剖視顯示安裝於支撐上之錯位晶片堆疊之圖式，其中晶粒以晶粒對晶粒方式電連接，且晶粒堆疊電連接於支撐。
第2A及2B圖係剖視顯示以鋸齒組態相互安裝之二堆疊晶粒單元之圖式。
第3A圖係顯示可固化互連材料之自由立起液滴之圖式，第3B圖係顯示於晶粒與支撐間形成電連接之步驟之圖式。
第4A、4B及4C圖係剖視顯示以鋸齒組態成層錯位堆疊之晶粒總成，其安裝及電連接於支撐。
第5A、5B及5C圖；第6A、6B及6C圖；第7A、7B及7C圖；第8A、8B及8C圖；以及第9A、9B及9C圖係如第4A、4B及4C圖剖視顯示以鋸齒組態建構成層錯位堆疊之晶粒總成之步驟的圖式，第4B,5B,6B,7B,8B及9B圖分別係如於4A,5A,6A,7A,8A及9A圖中B所示部分剖視之圖式，且第4C,5C,6C,7C,8C及9C圖分別係如於4A,5A,6A,7A,8A及9A圖中C所示部分剖視之圖式。
第10A圖係安裝於支撐上之成層錯位堆疊之晶粒總成一部分之正視圖，其顯示下層對支撐之電連接。
第10B圖係安裝於支撐上之成層錯位堆疊之晶粒總成一部分之俯視圖，其顯示下層對支撐之電連接。
第11A圖係安裝於支撐上之成層錯位堆疊之晶粒總成一部分之正視圖，其顯示上層對支撐之電連接。
第11B圖係安裝於支撐上之成層錯位堆疊之晶粒總成一部分之俯視圖，其顯示上層對支撐之電連接。
第12A圖係安裝於支撐上之成層錯位堆疊之晶粒總成一部分之正視圖，其顯示形成上層對支撐之電連接之步驟。
第12B圖係如第12A圖安裝於支撐上之成層錯位堆疊之晶粒總成一部分之俯視圖，其顯示上層對支撐之電連接。
第12C圖係如第12A圖安裝於支撐上之成層錯位堆疊之晶粒總成一部分之俯視圖，其顯示形成上層對支撐之電連接之步驟。
404．．．引線
428．．．堆疊晶粒總成
472,474．．．接合墊
476．．．焊墊
477．．．基板
502．．．柱
504．．．引線

Claims (31)

  1. 一種半導體總成，其包括安裝並隆起於支撐上方之隆起晶粒，該隆起晶粒於其前側具有複數個互連墊，該支撐具有第一導電材料的柱，每一個柱設置在該支撐的安裝側上的個別接合墊上，其中，藉由第二導電材料的引線，該隆起晶粒電連接於該支撐，每一引線分別接觸該複數個互連墊中的至少兩個互連墊以及對應的該接合墊上之對應的該柱，其中該第二導電材料包括於聚合物基質中之粒子形式之導電材料。
  2. 如申請專利範圍第1項之總成，其中，該第一導電材料及該第二導電材料包括相同材料。
  3. 如申請專利範圍第1項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括部分經固化材料。
  4. 如申請專利範圍第1項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括可固化材料。
  5. 如申請專利範圍第1項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括充填金屬之聚合物。
  6. 如申請專利範圍第5項之總成，其中，該充填金屬之聚合物包括充填金屬之環氧樹脂。
  7. 如申請專利範圍第5項之總成，其中，該充填金屬之聚合物包括充填金屬之熱固聚合物。
  8. 如申請專利範圍第5項之總成，其中，該充填金屬之聚合物包括充填金屬之熱塑聚合物。
  9. 如申請專利範圍第1項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括於載體中之粒子形式之導電材料。
  10. 如申請專利範圍第9項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括導電墨。
  11. 一種半導體總成，其包括安裝於支撐上方之晶粒堆疊之複數個晶粒，至少該複數個晶粒中之第一晶粒隆起於該支撐上，該第一晶粒於其前側具有互連墊，該支撐於其安裝側接合墊上具有第一導電材料的柱，其中，藉由第二導電材料的引線，該第一晶粒電連接於該支撐，該第二導電材料的引線使該晶粒上的該互連墊接觸該接合墊上的該柱，其中該第二導電材料包括於聚合物基質中之粒子形式之導電材料，其中，藉由第三導電材料的引線，至少該複數個晶粒中之第二晶粒電連接至該第一晶粒，該第三導電材料的引線使該第一晶粒上的該互連墊接觸該第二晶粒上的互連墊。
  12. 如申請專利範圍第11項之總成，其中，該第一導電材料及該第二導電材料包括相同材料。
  13. 如申請專利範圍第11項之總成，其中，該第三導電材料及該第二導電材料包括相同材料。
  14. 如申請專利範圍第11項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括部分經固化材料。
  15. 如申請專利範圍第11項之總成，其中，該第一導 電材料及該第二導電材料之至少一者包括可固化材料。
  16. 如申請專利範圍第11項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括充填金屬之聚合物。
  17. 如申請專利範圍第16項之總成，其中，該充填金屬之聚合物包括充填金屬之環氧樹脂。
  18. 如申請專利範圍第16項之總成，其中，該充填金屬之聚合物包括充填金屬之熱固聚合物。
  19. 如申請專利範圍第16項之總成，其中，該充填金屬之聚合物包括充填金屬之熱塑聚合物。
  20. 如申請專利範圍第11項之總成，其中，該第一導電材料及該第二導電材料之至少一者包括於載體中之粒子形式之導電材料。
  21. 如申請專利範圍第20項之總成，其中，該導電材料包括導電墨。
  22. 一種半導體總成，其包括安裝於並隆起於支撐上方之上晶粒堆疊中之複數個晶粒，該上晶粒堆疊中之至少第一晶粒於其前側具有互連墊，該支撐於其安裝側接合墊上具有第一導電材料的柱，其中，藉由第二導電材料的引線，該上晶粒堆疊中之該第一晶粒電連接於該支撐，該第二導電材料的引線使該第一晶粒上的該互連墊接觸該接合墊上的該柱，其中該第二導電材料包括於聚合物基質中之粒子形式之導電材料，其中，藉由第三導電材料的引線，至少該上晶粒堆疊中之第二晶粒電連接至該第一晶粒，該 第三導電材料的引線使該第一晶粒上的該互連墊接觸該第二晶粒上的互連墊。
  23. 如申請專利範圍第22項之半導體總成，進一步包括位於該支撐與該上晶粒堆疊間之下晶粒。
  24. 如申請專利範圍第22項之半導體總成，進一步包括位於該支撐與該上晶粒堆疊間之下晶粒堆疊。
  25. 如申請專利範圍第24項之半導體總成，其中，該下晶粒堆疊包括成層錯位堆疊的晶粒總成，且其中，該下晶粒堆疊中之晶粒以晶粒對晶粒方式電互連，且該下晶粒堆疊藉使該下晶粒堆疊之該晶粒上的互連墊及該支撐上之一組接合墊接觸之導電材料之引線電連接於該支撐。
  26. 如申請專利範圍第22項之半導體總成，進一步包括位於該支撐與該上晶粒堆疊間之半導體封裝。
  27. 如申請專利範圍第22項之半導體總成，其中，該上晶粒堆疊包括成層錯位堆疊的晶粒總成，其中，該上晶粒堆疊中之該晶粒之互連緣面對第一方向，且該互連晶粒墊對準該柱。
  28. 一種晶粒堆疊總成，包括：以鋸齒組態堆疊的成層錯位的第一晶粒堆疊及第二晶粒堆疊；支撐，具有第一組接合墊及第二組接合墊；以及複數個柱，突出於該第二組接合墊上方並與該第二組接合墊電連接，其中藉由導電材料的第一引線，該第一晶粒堆疊中之晶粒以晶粒對晶粒方式電互連，該第一引線接觸該第一晶粒堆疊的晶粒上的互連墊，而且導電材料的該第一引線將該第 一晶粒堆疊中之該晶粒與該第一組接合墊電連接；並且藉由導電材料的第二引線，該第二晶粒堆疊中之晶粒以晶粒對晶粒方式電互連，該第二引線接觸該第二晶粒堆疊的晶粒上的互連墊，而且導電材料的該第二引線將該第二晶粒堆疊中之該晶粒與該複數個柱電連接，其中該導電材料包括於聚合物基質中之粒子形式之導電材料。
  29. 如申請專利範圍第28項之晶粒堆疊總成，其中，該第一晶粒堆疊中之該晶粒之互連緣面對第一方向，且該第二晶粒堆疊中之該晶粒之互連緣面對異於第一方向之第二方向。
  30. 如申請專利範圍第28項之晶粒堆疊總成，其中，該第一方向與該第二方向相對。
  31. 如申請專利範圍第28項之晶粒堆疊總成，其中，該第一方向與該第二方向正交。
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