TWI360865B - Semiconductor device and manufacturing method of s - Google Patents

Semiconductor device and manufacturing method of s Download PDF

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Publication number
TWI360865B
TWI360865B TW094120881A TW94120881A TWI360865B TW I360865 B TWI360865 B TW I360865B TW 094120881 A TW094120881 A TW 094120881A TW 94120881 A TW94120881 A TW 94120881A TW I360865 B TWI360865 B TW I360865B
Authority
TW
Taiwan
Prior art keywords
gate
electrode
region
oxide film
diffusion layer
Prior art date
Application number
TW094120881A
Other languages
English (en)
Chinese (zh)
Other versions
TW200625553A (en
Inventor
Digh Hisamoto
Kan Yasui
Shinichiro Kimura
Tetsuya Ishimaru
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200625553A publication Critical patent/TW200625553A/zh
Application granted granted Critical
Publication of TWI360865B publication Critical patent/TWI360865B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H10D64/0133—Aspects related to lithography, isolation or planarisation of the conductor at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW094120881A 2004-07-29 2005-06-22 Semiconductor device and manufacturing method of s TWI360865B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004221764A JP2006041354A (ja) 2004-07-29 2004-07-29 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200625553A TW200625553A (en) 2006-07-16
TWI360865B true TWI360865B (en) 2012-03-21

Family

ID=35731149

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120881A TWI360865B (en) 2004-07-29 2005-06-22 Semiconductor device and manufacturing method of s

Country Status (5)

Country Link
US (2) US7504689B2 (https=)
JP (1) JP2006041354A (https=)
KR (1) KR20060050209A (https=)
CN (1) CN1728401B (https=)
TW (1) TWI360865B (https=)

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JP4601316B2 (ja) * 2004-03-31 2010-12-22 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4659527B2 (ja) * 2005-06-20 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5086558B2 (ja) * 2006-04-04 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR100762262B1 (ko) * 2006-10-23 2007-10-01 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
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JP2008263034A (ja) * 2007-04-11 2008-10-30 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
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JP5404149B2 (ja) * 2009-04-16 2014-01-29 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5554973B2 (ja) * 2009-12-01 2014-07-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP5214700B2 (ja) * 2010-10-18 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置
US8598646B2 (en) 2011-01-13 2013-12-03 Spansion Llc Non-volatile FINFET memory array and manufacturing method thereof
JP5951374B2 (ja) * 2012-07-09 2016-07-13 ルネサスエレクトロニクス株式会社 半導体装置
US20140167220A1 (en) 2012-12-14 2014-06-19 Spansion Llc Three dimensional capacitor
US8836006B2 (en) 2012-12-14 2014-09-16 Spansion Llc Integrated circuits with non-volatile memory and methods for manufacture
US9368606B2 (en) 2012-12-14 2016-06-14 Cypress Semiconductor Corporation Memory first process flow and device
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US20140167141A1 (en) 2012-12-14 2014-06-19 Spansion Llc Charge Trapping Split Gate Embedded Flash Memory and Associated Methods
US10014380B2 (en) 2012-12-14 2018-07-03 Cypress Semiconductor Corporation Memory first process flow and device
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JP6274826B2 (ja) 2013-11-14 2018-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9368644B2 (en) * 2013-12-20 2016-06-14 Cypress Semiconductor Corporation Gate formation memory by planarization
JP6238235B2 (ja) * 2014-06-13 2017-11-29 ルネサスエレクトロニクス株式会社 半導体装置
JP6375181B2 (ja) * 2014-08-28 2018-08-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN106158637B (zh) * 2015-03-31 2019-04-26 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN106158638B (zh) * 2015-04-01 2019-03-29 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
CN105120143B (zh) * 2015-07-28 2019-03-29 深圳市理邦精密仪器股份有限公司 电子阴道镜消除图像光斑的方法及装置
JP6557095B2 (ja) 2015-08-26 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP2017045947A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6578172B2 (ja) 2015-09-18 2019-09-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
JP6594198B2 (ja) 2015-12-28 2019-10-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6718248B2 (ja) 2016-02-17 2020-07-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6620034B2 (ja) 2016-02-24 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6591311B2 (ja) 2016-02-24 2019-10-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6629142B2 (ja) 2016-06-03 2020-01-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6652451B2 (ja) 2016-06-14 2020-02-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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JP6750994B2 (ja) * 2016-09-29 2020-09-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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JP7053388B2 (ja) 2018-06-28 2022-04-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7117223B2 (ja) 2018-11-08 2022-08-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7200054B2 (ja) 2019-06-24 2023-01-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
US7504689B2 (en) 2009-03-17
JP2006041354A (ja) 2006-02-09
CN1728401B (zh) 2011-05-25
CN1728401A (zh) 2006-02-01
US20060022260A1 (en) 2006-02-02
TW200625553A (en) 2006-07-16
US7847343B2 (en) 2010-12-07
KR20060050209A (ko) 2006-05-19
US20090152619A1 (en) 2009-06-18

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