TWI344228B - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- TWI344228B TWI344228B TW098123458A TW98123458A TWI344228B TW I344228 B TWI344228 B TW I344228B TW 098123458 A TW098123458 A TW 098123458A TW 98123458 A TW98123458 A TW 98123458A TW I344228 B TWI344228 B TW I344228B
- Authority
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- Taiwan
- Prior art keywords
- light
- copper
- emitting diode
- lead
- disposed
- Prior art date
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- 239000010949 copper Substances 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 150000004645 aluminates Chemical class 0.000 claims abstract description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 98
- 239000002253 acid Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 7
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 150000001879 copper Chemical class 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims description 2
- 239000003566 sealing material Substances 0.000 claims description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 2
- 229910001431 copper ion Inorganic materials 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- XHGGEBRKUWZHEK-UHFFFAOYSA-L tellurate Chemical compound [O-][Te]([O-])(=O)=O XHGGEBRKUWZHEK-UHFFFAOYSA-L 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 26
- 150000004760 silicates Chemical class 0.000 abstract description 2
- 235000021317 phosphate Nutrition 0.000 abstract 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 abstract 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 31
- 239000002994 raw material Substances 0.000 description 23
- 230000005284 excitation Effects 0.000 description 22
- 239000000203 mixture Substances 0.000 description 19
- 238000002360 preparation method Methods 0.000 description 15
- 230000004907 flux Effects 0.000 description 14
- 239000011572 manganese Substances 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 11
- 238000002485 combustion reaction Methods 0.000 description 9
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 9
- -1 phosphate compound Chemical class 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910000018 strontium carbonate Inorganic materials 0.000 description 9
- 229910052693 Europium Inorganic materials 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052712 strontium Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 6
- 229910052692 Dysprosium Inorganic materials 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- 229910052790 beryllium Inorganic materials 0.000 description 5
- 229910052791 calcium Inorganic materials 0.000 description 5
- 229910052745 lead Inorganic materials 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052684 Cerium Inorganic materials 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 229910052771 Terbium Inorganic materials 0.000 description 4
- 229910052775 Thulium Inorganic materials 0.000 description 4
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 229910052792 caesium Inorganic materials 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052701 rubidium Inorganic materials 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 102000004160 Phosphoric Monoester Hydrolases Human genes 0.000 description 2
- 108090000608 Phosphoric Monoester Hydrolases Proteins 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229940037003 alum Drugs 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 150000001860 citric acid derivatives Chemical class 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 101100004392 Arabidopsis thaliana BHLH147 gene Proteins 0.000 description 1
- 241000282817 Bovidae Species 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910001679 gibbsite Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000391 tricalcium phosphate Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Description
15788-Dpif.doc 光體3例如係藉由硬化材料 resin)進行密封。 如環氧樹脂或石夕樹脂(silicon 燈體型態之發光元件60可具 在本發明一實施例中 有一對以上的接腳。 ㈣輕縣料1關^力輕統件封裝 向剖面圖。散熱器71係配置於高功率發光元件70 、成73内’且散熱II 71係部分暴露於外界。一對導線 架74係從殼體73突出。 一個或多個發光二極體係配置於其中—導線架74,且 發光二極體6的電極例如係藉由導線與另—導線架%連 ,導I變色二極體與導^線架74之間。鱗 光體3則係、配置於發光二極體6的頂面與側面上。 圖5繪示為依照本發明另一實施例高功率發光元件封 裝體的側向剖面圖。 尚力率發光元件80具有殼體63,以容納發光二極體 6 7 ’配置於發光二極體6、7之頂面與側面的燐光體3、 一個或多個散熱器6卜62,以及一個或多個導線架64。導 線架64可用以接收電源供應器所提供的電源且導線架 64係從殼體63突出。 、 在圖4與圖5之高功率發光元件70、8〇中,燐光體3 可添加至配置於散熱器與發光元件之間的膠體中。此外, 本發明可將透鏡與殼體63、73結合。 在本發明之高功率發光元件中可選擇性地使用一個 或多個發光二極體’且燐光體可依照發光二極體而進行調 1344228 15788-Dpif.doc 整。以下將進行更詳細之說明’燐光體包括鉛及/或銅摻雜 之化合物。 本發明之高功率發光元件例如可具有冷卻器(未繪 示)及/或散熱器。本發明可使用空氣或風扇對冷卻此冷卻 器。 本發明之發光元件並不限定於前述之結構,這些結構 可根據發光二極體的特性、燐光體的特性,以及光線的波 長作適當的修改。此外,尚可增加新的部件於前述之結構 〇 本發明中,用以舉例之燐光體係說明如下。 (燐光體) 本發明之燐光體包括鉛及/或銅摻雜之化合物。燐光體 可藉由紫外光及/或可見光,例如藍光,來激發。化合物包 括鋁酸鹽、矽酸鹽、銻酸鹽、鍺酸鹽、鍺酸鹽-矽酸鹽,或 磷酸鹽型態之化合物。 鋁酸鹽型態之化合物可包括具有分子式(1)、分子式 (2),及/或分子式(5)之化合物。 a(M10)-b(M22O)-c(M2X)^Al2〇>,e(M30)*f(M42〇3)-g(M50Op)· h(M6x〇y) ……⑴ 其中’ Μ1可為Pb、Cu ’及/或前述材料之任意組合: Μ可為一個或多個一價元素(m〇n〇vaient eiements),如 Li、Na、K、Rb、Cs、Au、Ag,及/或前述材料之任意組 1344228 15788-Dpif.doc s ’ Μ可為一個或多個二價元素(divalent elements),如 Be、Mg、Ca、Sr、Ba、Zn、Cd、Μη,及/或前述材料之任 思組&,Μ可為一個或多個三價元素(trivaien〖 eiements), 如Sc、I、公、In,及/或前述材料之任意組合;M5可為 £、Ge、Ti、Zr、Mn、v、Nb、Ta、w、M〇,及/或前述 材料之任意組合;M6可為Bi、Sn、Sb、Sc、Y、La、Ce、
Pr、Nd、Pm、Sm、Eu、Gd、Tb ' Dy、Ho、Er、Tm、Yb、
Lu ’及/或前述材料之任意組合;χ可為F、a、工, 及/或前述材料之任意組合;〇<Μ2;〇 〇<d,S;〇<e,4;〇,f_<3;〇,g,8';〇-<h^-:^; $2, l$p$5; lSx$2;以及 l£ys5。 其/ ’ Ml可為此、CU,及/或前述材料之任意組合; 可為一個或多個一價元素,如Li、Na、K、Rb、Cs、
Au、Ag,及/或前述材料之任意組合;m3可為―個或多個 二=疋素,如 Be、Mg、Ca、Sr、Ba、Zn、以、,及/ 或前述材料之任意組合;M4可為Bi、Sn、Sb、Se、Y、La、 In、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、%、h〇、扮、
Tm、Yb、Lu ’及前述材料之任意組合;X可為F、c卜 Br、I,及前述材料之任意組合; ^ 〇 < d < 1 ; 0 < e < 1 ; 0 < f < 1 ; 〇 < g < 2 Γ 11 1344228 157S8-Dpif.doc - ,_ y j 乂 久 4-a-b-c > ο ο 銅與錯摻雜發光材料的製備例如為— 材(伽ng喊nals),例如鐵M壬何 = ,為氧,'材皆可用以形成富氧之鱗光體(= dominated phosphors) a 1 製備的例子: 具有:子式(3)之發光材料的製備方法。
….,(3) 、Eu203,及/或前述材料
Cu〇.〇2Sr3.98Al14〇25 : Eu 原材:CuO、SrC03、Α1(〇ίΙ;)3 之任意組合。
氧化物(〇xldes)、氫氧化物(hydroxides),及/或碳酸鹽 (carbonates)型態之原材可藉由少量的助焊劑⑴ux),例如 H3B〇3等’並以化學當量比例(伽丨也〇〇^士 pr0p0rti0ns) 處合在一起。此混合物可在明礬坩堝(alumina crucible)内進 行第一階段燒製約1小時,其係於溫度約為1,2〇〇〇(:的條 件下進行。在授拌預燒製材料(pre-fire(jmateriais)之後,接 著進行第二階段燒製約4小時,其係於減壓環境以及溫度 約為】,450 DC的條件下進行。之後,此材料可被攪拌、洗 蘇,乾燥,以及篩選=此最終的發光材料之發光波長約為 494奈米。 12 1344228 15788-Dpif.doc 表1 ·在激發波長約為400奈米的情況下,銅摻雜之
Eu2 ·活化鋁酸鹽與未經銅摻雜之Eu2'活化鋁酸鹽的比較。 表1
具有分子式(4)之發光材料的製備方法。
Pb〇,〇5 Sr3.95Ali4〇25 : Eu 原材,PbO、SrC〇3、Α1ζ〇3、Eu2〇3 ’及/或前述材料 之任意組合。 純氧化物(oxides)、碳酸鹽(carb〇nates)等型態之原材, 或其他能夠熱分解為氧化物之組成物可藉由少量的助焊劑 (flux) ’例如H3B〇3等’並以化學當量比例(st〇ichi〇metric proportions)混合在一起。此混合物可在明礬坩堝(alumina crucible)内進行第一階段燒製約1小時,其係於空氣中以 及溫度約為1,200 °C的條件下進行。在授拌預燒製材料 (pre-fired materials)之後,接著進行第二階段燒製,其係於 λ氣中以及溫度約為1,450 C的條件下燒製約2小時,再 於減壓環境下燒製約2小時。之後,此材料可被攪拌、洗 滌、乾燥,以及篩選。此最終的發光材料之發光波長約為 494.5奈米。 表2 :在激發波長約為400奈米的情況下,錯推雜之 Eu2+-活化鋁酸鹽與未經鉛摻雜之Eu'活化鋁酸鹽的比較。 13 1344228 15788-Dpif.doc 表2 捧雜化合物_ 無鉛化合物^-- Q5Ali4〇?s : Eu Sr^AluO” : Fi)、 — 發光密度(%) inn ^ 波長(奈米) 4943 493 ' - 表3 :在激發波長約為400奈米的情況下,〜些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之鋁酸 鹽之光學特性’及其發光密度百分比的比較。 表3 在激發波長為400 f米的情況下,與 耒摻雜銅/鉛之化 合物的發光密度比 較(%) 101.2 1 1 r--- 組成 Cu〇5Sr3 5Ali4〇7^: Eu Cu〇〇2Sr3.98AliaO?<: Eu liiU 360-430 - 4^n 〶/鉛摻雜之化 會私岛波長沒 峰(奈米) 495 — AC\A 秃豐拳鋼/錯之 波嗥(¾繁产長 493~~- Pb〇〇5Sr3 95A1u〇,s : Eu ^llO.OlSr3>99Ali3 995SI0 005O25 : Eu 360-430 360-430 1U3.1 101.4 103 朽4 494.5 494 493 493 492 ^uO,OlSr3.395Ba〇,595Ali4〇25 Eu, Dy 360-430 100.8 494 493 ^*>0.05^3.95^! 3t95(Ja〇.〇5〇25 : Eu 360-430 — 101.5 494 494 a(M!0) · b(M20) · c(A1203) · d(M32〇3) · e(M402) · f (M5xOy) ......(5) 其中,M1可為Pb、Cu,及/或前述材料之任意組合; Μ2 可為 Be、Mg、Ca、Sr、Ba、Zn、Cd、Μη,及/或前述 材料之任意組合;M3可為B、Ga、In,及/或前述材料之 任意組合;M4可為Si、Ge、Ti、Zr、Hf,及/或前述材料 之任思組合,Μ5 可為 Bi、Sn、Sb、Sc、γ、La、Ce、Pr、
Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu, 及/或前述材料之任意組合;〇<a$l ;〇<b$2;0<c$8; 14 15788-Dpif.doc 15788-Dpif.doc f$2 ’ 1 ;以及 1 〇<d<l;〇<e<l;〇 1A的例子:' 具有分子式(6)之發光材料的製備方法 ⑹
Cu〇.〇5Sr〇.95Al 1.9997¾.〇〇。3〇4 : Eu 原材.CuO、SrC03、Al2〇3、Si〇2、Eu2〇3,及/或前 述材料之任意組合。 純氧化物(oxides)及/或碳酸鹽(carb〇nates)型態之原材 可藉由少量的助焊劑(flux),例如A1F3等,並以化學當量 比例(stoichiometric proportions)混合在一起。此混合物^在 明礬襲(alumina crucible)内進行燒製約3小時,其係於減 壓環境以及溫度約為1,250 〇C的條件下進行。之後,此材 料可被猜、洗滌、乾燥,以及_。此最終的發光材料 之發光波長約為521.5奈米。 +表4 :在激發波長約為4〇〇奈米的情況下,銅摻雜之
Eu2 -活化鋁酸鹽與未經銅摻雜之Eu2+活化鋁酸鹽的比較。 表4 發光密度(%) 波長(奈米) 釦摻雜化合物 一 Cu〇.〇5Sr〇 9sA1i 9997Si〇 onn^Qa : Ell 106 521.5 無銅化合物
SrAl2〇4 : Eu 100 519 具有分子式(7)之發光材料的製備方法
Cu〇.12BaMg,.88Al16〇27 : Eu ......⑺ 原材:CuO、MgO、BaC03、ai(〇h)3、Eu203,及/或 15 1344228 15788-Dpif.doc 前述材料之任意組合。 純氧化物(oxides)、氫氧化物(hydroxides),及/或碳酸 鹽(carbonates)型態之原材可藉由少量的助焊劑(flux),例如 AIF3等,並以化學當量比例(st〇ichi〇metric pr〇p〇rti〇ns)昆合 在一起。此混合物可在明礬坩堝(alumina crucible)内進行燒 製約2小時,其係於減壓環境以及溫度約為142〇〇c的條 件下進行。之後,此材料可被攪拌、洗滌、乾燥,以及篩 選。此最終的發光材料之發光波長約為452奈米。 表5 :在激發波長約為4〇〇奈米的情況下,鉛摻雜之
Eu -活化鋁酸鹽與未經斜摻雜之Eu2+·活化鋁酸鹽的比較。 表5 銅摻雜化合物 - 無銅化合物 Cu〇.i2BaMg, · P„ 發光密度 101 100 波長(奈米) 450 具有分子式(8)之發光材料的製備方法。
Pb〇.iSr〇 9Al2〇4 : Eu 原材:PbO、SrC03、Al(〇H)3、Eu203,及/或前述材 料之任意組合。 純氧化物(oxides)、氫氧化物(hydr〇xides),及/或碳酸 鹽(carbonates)等型態之原材可藉由少量的助焊劑(flux),例 如邮〇3等,並以化學當量比例(stoichi〇metric proportions) 混合在一起。此混合物可在明礬坩堝(alumina crucible)内進 行第一階段燒製約2小時,其係於空氣中以及溫度約為 1344228 15788-Dpif.doc 1,000 °c的條件下進行。在攪拌預燒製材料(prefired materials)之後,接著進行第二階段燒製,其係於空氣中以 及溫度約為1,420 °C的條件下燒製約i小/時,再於減壓環 境下燒製約2小時。之後,此材料可被攪拌、洗滌、乾燥: 以及筛選。此最終的發光材料之發光波長約為521奈米。
表6 :在激發波長約為400奈米的情況下,錯捧雜之 Eu2+-活化鋁酸鹽與未經鉛摻雜之Eu2+-活化鋁酸鹽的比較。 表6
梦光密度(%) 波長(奈米) 關於銅及/或鉛摻雜之鋁酸鹽之結果係列於表7中 表7 :在激發波長約為400奈米的情況下,一此能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜&^酸 鹽之光學特性’及其發光密度百分比的比較。
17 1344228 15788-Dpif.doc 組成 可能激發 廷® (萘 米) 在激發波長為4uu 奪米的情況下,與 臬摻雜銅/紹之化 合私A發光密度比 m%) 銅/鉛摻雜之化 合物的波長波 降(奈米) it%%% 長波峰(奈 米) CUnnsSrng^Ali Q9g?Si〇on〇1〇4 360 - 440 106 521.5 519 " CUo.2Mg07995Li0.G005 All ·9〇3〇.ι〇4 :Eu, Dv 360-440 101.2 482 480 Pb〇.iSr〇.9Al2〇4 : Eu 36〇. 440 102 521 519 ClloosBaMgi 95·Αΐΐ6〇27: Eu,Mu 360 - 400 100,5 451,515 450,515 Cu〇i2BaMgi 8gAli6〇2? - Eu 360-400 101 452 450 Cu〇〇iBaMg〇.9cjAli〇〇i7: Eu 360-400 102.5 fol 449 Pbo1BaMgo.9Al95Gao.5On : Eu, Dy 360-400 100.8 448 450 Pb〇.o8Sr〇.9n2Al2〇4 : Eu, Dy 360 - 440 102.4 521 519 Pb〇2Sr〇 8AI2O4 .* Mn 360 - 440 100.8 658 655 Cu〇〇6Sr〇q4Al2〇4 : Eu 360-440 102.3 521 519 CUo.O5Bao94Pboo6Mgo.95Al 1 〇017 :Eu 360-440 100.4 451 449 Pb〇.3Ba〇.7Cu〇.1Mglt9Ali6〇27 :Eu 360-400 100.8 452 450 Fb〇.3Ba〇.7Cu〇. iMg! .9 A116027 :Eu, Mn 360-400 100.4 452,515 450,515
鉛及/或銅摻雜之矽酸鹽具有分子式(9)。 a(M1〇).b(M2〇).c(M3X)-d(M320).e(M42〇3).f(M50〇p).g(Si〇2)· h(M6xOy) ... (9) 其中’ Μ1可為Pb、Cu ’及/或前述材料之任意組合; 為 ^、^、^、^^、^、^、-,及/或前述 任意組合;Μ、為 Ll、Na、K、Rb、Cs、Au、Ag, i材二述rr之任意,合;μ4可為ai、Ga、In,及/或前 Ti 7 1 忍組合;M 可為 Ge、V、Nb、Ta、W、M〇、 Sb、Γ 及/或前述材料之任意組合;Μ可為扭、Sn、
Dy>HV.FLa'Ce'Pr'Nd'Pm>Sm'Eu'Gd'Tb' r Tm、Yb、Lu ’及/或前述材料之任意組合; 18 15788-Dpif.doc X可為F、CbBr、I,及前述材料之任意組合;0<a<2. 0<b<8;0<c<4;0<d<2;〇<e<2;〇^f<2;^<g $10’0<h$5; ls〇$2’ l$p$5; Hxg;以及 製備的例早: 具有分子式(10)之發光材料的製備方法。
Cu〇 〇5Sri 7Ca〇 25Si〇4 : Eu 原材:CuO、SrC03 CaC03、Si〇2、Eu203,及/戍前 述材料之任意組合。 — 純氧化物(oxides)及/或碳酸鹽(carb〇nates)型態之原材 可藉由少量的助焊劑(flux),例如NH4C1等,並以化學當 置比例(stoichiometric proportions)混合在一起。此混合物可 在明礬坩堝(alumina crucible)内進行燒製約i小時,其係於 鈍氣環境(如A或惰性氣體)以及溫度約為L200 〇c的 條件下進行。接著,授拌此材料(pre朽red 。之後, 接著進行燒製約2小時,其係於稍微減壓之環境以及溫度 '、、勺為1,2GG°C的條件下進行。之後,此材料可被授摔、洗 私、乾燥’以及篩選。此最終的發光材料之發光波長約 奈米。 2+表8 .在激發波長約為400奈米的情況下,銅摻雜之 U -活化石夕酸鹽與未經銅摻雜之Eu2+-活化石夕酸鹽的比較。 1344228 15788-Dpif.doc 表8
Cu〇 osSri 7Ca〇,25Si04 : Eu —— 苎銅化合物 —- ^ri.7Ca〇^Si04: Eu ioo ~ — 588 網推雜化合物 發光密度(%) 104 592 ----------- 具有分子式(11)之發光材料的製備方法
Cu 〇.2Ba 2Zn 〇.2Mg 〇.6Si 207: Eu 原材.CuO、BaC03、ZnO、Mg〇、Si02、Eu2〇3,及 /或前述材料之任意組合。 高純度氧化物(oxides)及/或碳酸鹽(carb〇nates)型態之 原材可藉由少量的助焊劑(flux),例如NH4C1等,並以化 學當量比例(stoichiometric proportions)混合在一起。此混合 物可在明馨掛禍(alumina crucible)内進行第一階段燒製約 2小時’其係於減壓環境以及溫度約為1,1〇〇。(:的條件下 進行。接著,授拌此材料(pre-fired materials)。之後,接著 進行燒製約2小時,其係於減壓之環境以及溫度約為〗,235 °C的條件下進行。之後,此材料可被攪拌、洗滌、乾燥, 以及篩選。此最終的發光材料之發光波長約為467奈米。 表9 :在激發波長約為400奈米的情況下,鋼摻雜之
Eu2+-活化矽酸鹽與未經銅摻雜之Eu2+·活化矽酸鹽的比較。 表9 一摻雜化合物 無銅化合物 Cu〇2Sr2Zn〇2Mg〇ftSi7〇7 · Eu Sr2Zn2Mg〇.6Si2〇7 : Eu 發光密度(%) 101.5 100 苎長(奈米) 467 465 " 1344228 15788-Dpif.doc 具有分子式(12)之發光材料的製備方法。
Pb〇 jBa〇 95Sr〇 95Si〇.998Ge〇 002〇4 : Eu ......(12) 原材:PbO、SrC03、BaC03、Si02、Ge02、Eu2〇3,及/ 或前述材料之任意組合。 純氧化物(oxides)及/或破酸鹽(carb〇nates)等型態之原 材可藉由少量的助焊劑(flux),例如NH4C1等,並以化學 當量比例(stoichiometric proportions)混合在一起。此混合物 可在明釁掛禍(alumina crucible)内進行第一階段燒製約1 小時,其係於空氣中以及溫度約為L000 的條件下進 行。在搜拌預燒製材料(pre-fired materials)之後,接著進行 第二階段燒製,其係於空氣中以及溫度約為1220。^:的條 件下燒製約4小時’再於減壓環境下燒製約2小時。之後, 此材料可被攪拌、洗滌、乾燥,以及篩選。此最終的發光 材料之發光波長約為527奈米。 表10:在激發波長約為400奈米的情況下,鉛摻雜之 Eu ·活化石夕酸鹽與未經錯掺雜之如2+_活化石夕酸鹽的比車交。 表10 鉛摻雜化合物 - 無鉛化合物 Pb〇.iBa〇95Sr〇.95iii〇.99RGenftftn01 · PM BaSrSi〇4 '· Eu 發光密度(%) 101.3 --- 100 波長(奈米) 527 -- 525 具有分子式(13)之發光材料的製備方法^
Pb0.25Sr3.75Si3〇8Cl4 : Eu (13) 21 1344228 15788-Dpif.doc 原材.PbO、SrC03、SrCl2、Si02、Eu2〇3,及前述材 料之任意組合。 氧化物(oxides)、氣化物(chi〇rides),及/或碳酸鹽 (carbonates)等型態之原材可藉由少量的助焊劑(flux),例如 nh4ci 等,並以化學當量比例(stoichiometric piOporticms) 混合在一起。此混合物可在明礬坩堝(aluniina cruciWe)内進 行第一階段燒製約2小時,其係於空氣中以及溫度約為 ι,ιοο。(:的條件下進行。在攪拌預燒製材料(pre_fired materials)之後,接著進行第二階段燒製,其係於空氣中以 及溫度約為1,220 °C的條件下燒製約4小時,再於減壓環 境下燒製約1小時。之後,此材料可被攪拌、洗滌、乾燥, 以及篩選。此最終的發光材料之發光波長約為492奈米。 表11 :在激發波長約為400奈米的情況下,鉛摻雜之 Eu2+-活化氣石夕酸鹽(chlorosilicate)與未經紹摻雜之Eu2+_活 化氣石夕酸鹽的比較。 表11 鉛摻#^^合病 無鉛化合物" -- Pb〇.25Sr3.75S“〇RCl4 : Eu Sr4Si3〇8CU : Eu 發光密度(%) 100.6 100 -- 波長(奈米) 492 490 ---- 關於銅及/或鉛摻雜之矽酸鹽之結果係列於表12中。 表12 :在激發波長約為400奈米的情況下,—些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之稀土 活化石夕酸鹽(rare earth activated silicates)之光學特十生,及其 發光密度百分比的比較。 22 1344228 15788-Dpif.doc 組成 可能激登 範圍(奈 米) 在數發波長為^00 f米的情況下,與 ▲海雜銅/鉛之化 合物的發光#度比 較(%) ——^ 鋼/羚摻雜之 —- 雜銅/船之 絲赖皮長 —---— 525 Pb〇. iBa〇,95Sr〇.95Si〇.998GC〇.002^4 :Eu 360-470 101.3 527 Cu〇〇2(Ba,Sr,Ca,Zn)i.98Si〇4 :Eu 360 - 500 108.2 565 560 CuoosSfi 7Ca〇7sSi〇4 * Eu — 360-470 104 592 588 Cu〇 〇5Li〇.〇〇2Srj 5Ba〇.448Si〇4 :Gd, Eu 360-470 102.5 557 555 465 Cu〇2Sr2Zn〇?MgnftSi2〇7 : Eu_ 360-450 101.5 467 Cu〇〇2Ba2.eSr〇2Mg〇.98Si2〇8 :Eu, Mn 360-420 100.8 440, 660 438,660 490 P^0.25Sr3 75SI3O8CI4 ^ Eu 360-470 100.6 492 Cu〇.2Ba2.2Sr〇,75Pb〇.〇5Zn〇.8Si2〇8 :Eu 360-430 100.8 448 445 440 cuo2Ba3Mgo.8sil.99Geo.0108 :Eu 360-430 101 ---—. 444 Cuo 5Zno.5Ba2Geo2Si1.8O7 * Eu 360-420 102.5 435 — 433 41^ cnr\ Cu〇 8Mg〇 2Ba3Si2〇8 : Eu, Mn 360 - 430 Ϊ03 438,"670 Pb〇 i5Ba! 84 Zn〇.01Si〇 99ΖΓ0.01Ο4 :Eu 360 - 500 101 512 O/U 510 Cuo^BHsCajgSi^Oig 1 Eu 360-470 101.8 ' 495 491 鉛及/或銅摻雜之銻酸鹽具有分子式(14) 挪1。).摩220) . c(M2X) . d(Sb2〇5) 3f(M4xOy) ……(14) 其么中,可為Pb、Cu ’及/或前述材料之任意組合; Μ 可為 Li、Na、K、Rb、Cs、Au、Ap,a /少此 m ,, m r g及/或則述材料之 ΪΓ二 V: g Sr、Ba、Zn、Cd、Mn, 及/或刖述材料之任意組合;W可為m、&、&、Y、U、
Ec; Tb ' Dy ' Gd ^ ; < a < 0< 【〇=r ’及/或前述材料之任意組合;0 e<8;0<f<2;1 2 , 0<b<2 ; 〇<c<4; 0<d<i 23 T344228 15788-Dpif.doc
Sx<2 ;以及 1 。 製備的例早: 具有分子式(15)之發光材料的製備方法
Cu〇.2Mg ! 7Li 〇.2Sb207 : Μη ......(15) 原材:CuO、MgO、Li20、Sb205、MnC03,及/或前 述材料之任意組合。 氧化物(oxides)型態之原材可藉由少量的助焊劑 (flux) ’ 並以化學當量比例(st〇jchi〇metric pr0p〇rti〇ns)混合 在起此混合物可在明馨禍(alumina crucible)内進行第 一階段燒製約2小時,其係於溫度約為985。(:的條件下進 行。在預燒製之後,可攪拌該預燒製之材料。接著進行第 一階段燒製約8小時,其係於含氧大氣環境以及溫度約為 1,20。0 °C的條件下進行。之後,此材料可被攪拌、洗滌、 乾燥,以及篩選。此最終的發光材料之發光波長約為626 奈米。 表丨3 .在激發波長約為4〇〇奈米的情況下,鋼摻雜 錄酸鹽與未經銅摻雜之銻酸鹽的比較。 厂、 表13 銅摻雜化合物~~~ Cu〇,2Mgi 7Li〇 2Sb2〇7 : Μη" 101.8 ^ 波長(条来) 652 ~ 具有分子式(16)之發光材料的製備方法 — 無銅化合物 " η MgjLi。2%2〇7: Mn 100 --—J 650 24 1344228 15788-Dpif.doc
Pb〇.〇〇6Ca〇 6Sr〇.394Sb2〇6 原材:PbO、CaC03、SrC03、Sb205,及/或前述材料 之任意組合。
氧化物(oxides)及/或碳酸鹽(carbonates)型態之原材可 藉由少量的助焊劑(flux),並以化學當量比例(st〇ichi〇metrie proportions)混合在一起。此混合物可在明礬坩堝⑷咖^ crucible)内進行第一階段燒製約2小時,其係於溫度約為 975 °C的條件下進行。在預燒製之後,可攪拌該預燒製之 材料。接著進行第二階段燒製’其係於空氣中以及溫度約 為1,175 °C的條件下燒製約4小時,再於含氧大氣環境下 燒製約4小時。之後’此材料可被攪拌、洗滌、乾燥,以 及篩選。此最終的發光材料之發光波長約為637奈米。 表14 :在激發波長約為400奈米的情況下,錯摻雜之 録酸鹽與未經鉛摻雜之銻酸鹽的比較。
(16) 表14
關於銅及/或鉛摻雜之銻酸鹽之結果係列於表15中 表15 :在激發波長約為400奈米的情況下,一些能夠 被長波長紫外光及/或可見光激發的銅及/或斜摻雜之錄酸 鹽之光學特性’及其發光密度百分比的比較。 25 T344228 15788-Dpif.doc 类15 組成 可能激發 範圍(奈米) 在激發写7長$ lllfstl 比較(%) __— 網/鉛摻雜号 化合物的婆 長波峰(奈 米) 645 未摻雜銅/鉛 之化合4的 1、長波峰(S 木) 649 ?b〇 2Mg〇,〇〇2Cai 79gSb2〇6F2 * Μη Cu〇.i5Cai.g45Sr〇.〇〇5Sbt 99sSi〇.〇02〇7 :Μη 360 - 400 360-400 1U2 101.5 660 658 650 CUaoMSi : Μπ 360-400 101.8 652 Cu〇.2Pb〇.〇iCa〇.79Sbi.98Nb〇.〇2〇6 :Μη 360-400 98.5 658 658 CUo.oiCai 9gSb] 9995^0.0005〇7 : Mil 360-400 100.5 660 657 ------- Pb〇.〇〇6Ca〇 ^Sr〇 394Sb2〇6 360-400 102 637 638 〇11〇.〇2^3〇 ^Sr〇 i«Sb〇〇7 360-400 102.5 649 645 Pb〇.!98Mg〇 〇〇4Ca] 798Sb2〇6p2 360 · 400 101.8 628 630 ~
鉛及/或銅摻雜之鍺酸鹽,及/或鍺酸鹽-矽酸鹽具有分 子式(17)。 a(M10)b(M220)c(M2X)dGe02e(M30)f(M4203)g(M500p). h(M6x〇y) ……(Π) 2。、中,Μ1可為Pb、CU,及/或前述材料之任意組<
= ^、Κ、Μ、&、M、Ag ’及/或前述材米
可為 Be、Mg、Ca、Sr、Ba、Zn、cd, 或則返材料之任意級合;M4可為HE ΙΠ ’及/或前述材料之任意組合;M5 / V、Nb、Ta、u, w J ^ S,' Tl' Zr ^ 為Bi、Snm 及/或前述材料之任意組合; 組合;心F Hu、”,及/或前述材㈣ o<a〇 。為 1,及/或前述材料之任专‘ 0<a$2’〇W2;〇w10;0< 叶:任思⑷ < f < 14 · π ~l〇,〇<e<14 26 1344228 15788-Dpif.doc Χ$2;以及 l$y$5。 製備的你丨子: 具有分子式(18)之發光材料的製備方法。 Ρ^ο.ο〇4〇αι 99Zn〇.〇〇6Ge〇.8Si〇 2〇4 · Μη 原材:PbO、CaC03、ΖηΟ、Ge02、Si〇2、MnC〇3, 及/或前述材料之任意組合。 氧化物(oxides)及/或碳酸鹽(carbonates)等型態之原材 可藉由少量的助焊劑(flux),例如NH4C1等,並以化學當 量比例(stoichiometric proportions)混合在一起。此混合物可 在明礬坩堝(alumina crucible)内進行第一階段燒製約2小 時,其係於含氧大氣環境中以及溫度約為12〇〇〇c的條件 下進行。接著,攪拌該材料。之後,接著進行第二階段燒 製約2小時’其係於含氧大氣環境中以及溫度約為〇c 的條件下進行。之後,此材料可被攪拌、洗滌、乾燥,以 及筛選。此最終的發光材料之發光波長約為655奈米。 表16 :在激發波長約為4〇〇奈米的情況下,鉛摻雜之 錳-活化鍺酸鹽與未經鉛摻雜之錳_活化鍺酸鹽的比較。 表16 蛔#雜化合物 無銅化合物 Caj 99Zn〇.〇iGc() gSi〇 2〇4 * Μπ 發光密度(%) 101.5 100 波長(奈米) 655" " 1 657 具有分子式(19)之發光材料的製備方法。 27 1344228 15788-Dpif.doc
Cu0 46Sr0 54Ge0 6Si0.4〇3 : Μη ......(19) 原材.CuO、SrC〇3、Ge02、Si〇2、MnC03,及/或前 述材料之任意組合。 氧化物(oxides)及/或碳酸鹽(carbonates)等型態之原材 可藉由少量的助焊劑(flux) ’例如ΝΗβΙ等,並以化學當 量比例(stoichiometric proportions)混合在一起。此混合物可 在明釁掛堝(alumina crucible)内進行第一階段燒製約2小 時’其係於含氧大氣環境中以及溫度約為ijOOoC的條件 下進行。接著,攪拌該材料。之後,接著進行第二階段燒 製約4小時’其係於含氧大氣環境中以及溫度約為丨,丨8 〇。c 的條件下進行。之後,此材料可被攪拌、洗滌、乾燥,以 及篩選。此最終的發光材料之發光波長約為658奈米。 表17 :在激發波長約為4〇〇奈米的情況下,銅摻雜之 猛-活化鍺酸鹽-矽酸鹽與未經鋼摻雜之錳_活化鍺酸鹽_矽 酸鹽的比較。 表17 無銅化合物 h.46叫: Μη SrGen<;Sin4〇i · Μπ 發光密度(%) 103 - 100 波長(奈米) 658 655 表18 :在激發波長約為4〇〇奈米的情況下,一些能夠 被長波長系外光及/或0J見光激發的銅及/或錯摻雜之錯酸 鹽-矽酸鹽之光學特性,及其發光密度百分比的比較。 28 1344228 15788-Dpif.doc
'ίίΙΙϊ Ιβήϊ 表18 可能激 發範固 (奈米) $($為波 Pb〇.004Cai 99Zn〇.Q〇6Ge〇.8Sin 9〇4 · MS. Cu145Mg26 550e9 4Si〇 6048: Mn Cu1.2Mg26.gGe8.9Si11〇48 : Mn Cu4Mg20Zn4GesSi2.5〇3sFi0: Mn Pb〇 o〇iBa〇 849Zn〇 osSr]】Ge〇 〇4Si〇.96〇4 :Eu
組成
Pb0002Sr0954Cai.044Ge0.93Si0.07O4 :Μη f U〇.4t_ ... . 一 ^_____ C^,〇〇2Sr〇 99gBa〇 99Ca〇 〇lSi〇 9gGC〇.〇2^4 Eu
Cu〇 〇5Mg4,9sGeQ^F7: Mn
Cu〇,〇5M^3 95Ge〇s sF : Mn 鉛及/或銅摻雜之磷酸鹽具有分子式(2〇) a(M10)-b(M^O)x(M2X)-dP205-e(M3〇).f(M42〇3) g(M5〇^ ^ x〇y) (20) # 中L.’ Ϊ可為此、CU,及/或前述材料之任意組合; 二丄二ί、肋、CS、AU、Ag ’及/或前述材料之 任思、.且口,Μ 可為 Be、Mg、Ca、Sr 及/或前述材料之任意組合;M4可為“'/η Cd、Mn, 夕,’及/或前述材料之任意組合;M5、、L;、 刖述材料之杯咅έ人 丫 Ce、Tb,及/或 料之任意=t合;Γ為F、。1,、1,· -^*〇<a<2;0<b<12;〇,csl6;〇<d^; 29 Γ544228 15788-Dpif.doc 〇<e$5;〇$f£3Kg£2;0<h£2; Mxw,以及 1Sy$5 ° 製備的例+: 具有分子式(21)之發光材料的製備方法。
Cu〇.〇2Ca4.98(P〇4)3Cl : Eu ......(21) 原材· CuO、CaC03、Ca3(P〇4)2、CaCl2、Eu2〇3,及/ 或前述材料之任意組合。 氧化物(oxides)、瑞酸鹽,及/或碳酸鹽(carbcmates)、 氣化物型態之原材可藉由少量的助焊劑(flux),並以化學當 量比例(stoichiometric proportions)混合在一起。此混合物可 在明釁掛瑪(alumina crucible)内進行第一階段燒製約2小 時,其係於減壓環境以及溫度約為1,240。(:的條件下進 行。之後’此材料可被攪拌、洗滌、乾燥,以及篩選。此 最終的發光材料之發光波長約為450奈米。 表19 :在激發波長約為400奈米的情況下,銅摻雜之 Eu2+-活化氣磷酸鹽與未經銅摻雜之Eu2+_活化氣磷酸鹽的 比較。 表19 匕合物 無銅化合物 一 ^Uo.ozCa^o^PO^Cl: Eu Ca5(P04)3Cl: Eu 呀光密度(%) 、本 e , 1 , ' 101.5 ~ 100 _ 波長(奈米) 450 」 447 ~1 表20:在激發波長約為400奈米的情況下,—些能夠 被長波長紫外光及/或可見光激發的銅及/或鉛摻雜之磷酸 30 1344228 15788-Dpif.doc 型電腦,以及家電、立體聲音響、電信元件等電子元件中, 亦可應用在展覽顯示器之按鍵(key pad)以及背光源。此 外,此波長轉換型發光元件尚可應用在汽車、醫療儀器及 照明產品中。 ' ° 本發明可提供一種波長轉換型發光元件,其具有抗 水、抗蒸氣以及抗極性溶劑等穩定性(stability)。 雖然本發明已以較佳實施例揭露如上,然其並非用以 • 限^本發明,任何熟習此技藝者,在不脫離本發明之精神 =範圍内,當可作些許之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1績示為依照本發明一實施例晶片型態之發光元件 封裝體的側向剖面圖。 圖2續·不為依照本發明一實施例頂蓋型態之發光元件 封裝體的側向剖面圖。 鲁圖3繪示為依照本發明一實施例燈體型態之發光元件 封裝體的側向剖面圖。 圖4繪示為依照本發明一實施例高功率發光元件 體的側向剖面圖β 、 圖5繪示為依照本發明另一實施例高功率發光元件封 裝體的側向剖面圖。 31 _ 圖6綠示為依照本發明一實施例具有發光材料之發来 元件的發光頻譜。 ^ 圖7繪不為依照本發明另一實施例具有發光材料之發 33 1344228 15788-Dpif.doc 光元件的發光頻譜。 【主要元件符號說明】 1 :基材 2 :導線 3 :燐光體(物質) 5 :電極 6、7 :發光二極體 9 :導電膠 10 ·密封材料 31 :反射器 40:晶片型態之發光元件封裝體 50 :頂蓋型態之發光元件封裝體 51、52 :接腳 53 :二極體支架 60 :燈體型態之發光元件 61、62、71 :散熱器 63、 73 :殼體 · 64、 74 ··導線架 70、80 :發光元件 34
Claims (1)
1344228 15788-Dpifl 修正日期:99年12 爲第98123458號中文專利範圍無劃線修正本 七、申請專利範圍: 1.一種發光元件,包括: 一發光二極體,用以發出一光線 ;以及 一鱗光體’用以改變從該發光二極體發出之該光線的 波長’該鱗光體實質上係至少覆蓋住部分的該發光二極體; 其中該燐光體包括一二價銅離子及氧, 其中該燐光體包括作為活化劑之一稀土元素和/或其 他發光離子;以及 其中該二價銅離子為該燐光體的主體晶格組份。 2. 如申請專利範圍第1項所述之發光元件,其中該燐 光體包括一含銅的鋁酸鹽、或一含銅的鋁酸鹽與一含銅之 銻酸鹽、一含銅之鍺酸鹽、一含銅之錯酸鹽_梦酸鹽、一含 銅之矽酸鹽及一含銅之磷酸鹽之至少一者的組合。 3. 如申請專利範圍第1項或第2項所述之發光元件’ 其中該燐光體包括Y及Gd之至少一者。 4. 如申請專利範圍第1項或第2項所述之發光元件, 更包括一密封材料’以覆蓋住該發光二極體以及該燐光體。 5. 如申請專利範圍第1項或第2項所述之發光元件, 其中該燐光體係與一硬化材料混合。 6. 如申請專利範圍第1項或第2項所述之發光元件’ 更包括: 一基材; 多個電極’配置在該基材上;以及 一導電元件’用以將該發光二極體連接至其中一電極, 其中該發光二極體配置於其他電極上。 35 Γ344228 15788-Dpifl 爲第98123458號中文專利範圍無劃線修正本 修正日期:99年12月9日 7. 如申請專利範圍第1項或第2項所述之發光元件, 更包括: 多個接腳; 一二極體支架,配置於其中一接腳的末端;以及 一導電元件,用以將該發光二極體連接至其他接腳, 其中該發光二極體配置於該二極體支架内且包括多 個電極。 8. 如申請專利範圍第1項或第2項所述之發光元件, 更包括: 一殼體; 一散熱器,至少部分配置於該殼體内 多數導線架,配置於該散熱器上或該散熱器周圍;以 及 一導電元件,用以將該發光二極體連接至其中一導線 架, 其中該發光二極體配置於該散熱器上。 36
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2004
- 2004-06-10 KR KR1020040042396A patent/KR100665298B1/ko active IP Right Grant
- 2004-12-22 AT AT04106882T patent/ATE478126T1/de active
- 2004-12-22 PT PT04106882T patent/PT1605030E/pt unknown
- 2004-12-22 DE DE202004021351U patent/DE202004021351U1/de not_active Expired - Lifetime
- 2004-12-22 ES ES04106882T patent/ES2350830T3/es active Active
- 2004-12-22 EP EP04106882A patent/EP1605030B1/en active Active
- 2004-12-22 EP EP08166716.4A patent/EP2025734B1/en active Active
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- 2004-12-22 DE DE602004028710T patent/DE602004028710D1/de active Active
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- 2004-12-30 US US11/024,702 patent/US7554129B2/en active Active
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US8066909B2 (en) | 2011-11-29 |
EP1605030A2 (en) | 2005-12-14 |
ATE478126T1 (de) | 2010-09-15 |
KR20050117164A (ko) | 2005-12-14 |
ES2490603T3 (es) | 2014-09-04 |
US8089084B2 (en) | 2012-01-03 |
JP4159542B2 (ja) | 2008-10-01 |
CN101424388B (zh) | 2011-04-13 |
TW200541105A (en) | 2005-12-16 |
EP2025734B1 (en) | 2014-05-14 |
KR100665298B1 (ko) | 2007-01-04 |
CN100442553C (zh) | 2008-12-10 |
TW200952225A (en) | 2009-12-16 |
CN1707819A (zh) | 2005-12-14 |
US20100301371A1 (en) | 2010-12-02 |
DE602004028710D1 (de) | 2010-09-30 |
EP2253690A3 (en) | 2012-02-15 |
US20080224163A1 (en) | 2008-09-18 |
TWI328885B (en) | 2010-08-11 |
EP2025734A2 (en) | 2009-02-18 |
EP2253690A2 (en) | 2010-11-24 |
US20050274972A1 (en) | 2005-12-15 |
JP2005354027A (ja) | 2005-12-22 |
PT1605030E (pt) | 2010-11-22 |
US7554129B2 (en) | 2009-06-30 |
CN101424388A (zh) | 2009-05-06 |
EP2025734A3 (en) | 2009-06-10 |
US20080067920A1 (en) | 2008-03-20 |
EP1605030A3 (en) | 2007-09-19 |
EP1605030B1 (en) | 2010-08-18 |
DE202004021351U1 (de) | 2007-10-11 |
MX2007007648A (es) | 2007-09-18 |
ES2350830T3 (es) | 2011-01-27 |
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