US20100301371A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- US20100301371A1 US20100301371A1 US12/854,001 US85400110A US2010301371A1 US 20100301371 A1 US20100301371 A1 US 20100301371A1 US 85400110 A US85400110 A US 85400110A US 2010301371 A1 US2010301371 A1 US 2010301371A1
- Authority
- US
- United States
- Prior art keywords
- light emitting
- emitting device
- combination
- emitting diode
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 claims abstract description 81
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 80
- 150000001875 compounds Chemical class 0.000 claims abstract description 57
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 3
- 239000010949 copper Substances 0.000 claims description 164
- 229910052802 copper Inorganic materials 0.000 claims description 99
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 90
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 150000004645 aluminates Chemical class 0.000 claims description 19
- 229910052693 Europium Inorganic materials 0.000 claims description 15
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 12
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 11
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 11
- 229910052748 manganese Inorganic materials 0.000 claims description 11
- 229910052712 strontium Inorganic materials 0.000 claims description 11
- 229910019142 PO4 Inorganic materials 0.000 claims description 10
- 229910052788 barium Inorganic materials 0.000 claims description 10
- 229910052791 calcium Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 9
- 229910052772 Samarium Inorganic materials 0.000 claims description 9
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- 229910052745 lead Inorganic materials 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052706 scandium Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- 229910052771 Terbium Inorganic materials 0.000 claims description 8
- 229910052792 caesium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 8
- 229910052701 rubidium Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052691 Erbium Inorganic materials 0.000 claims description 6
- 229910052689 Holmium Inorganic materials 0.000 claims description 6
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 6
- 229910052775 Thulium Inorganic materials 0.000 claims description 6
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 239000003566 sealing material Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 239000012190 activator Substances 0.000 claims 1
- 230000005284 excitation Effects 0.000 description 32
- 239000007858 starting material Substances 0.000 description 30
- 239000000203 mixture Substances 0.000 description 29
- 238000002360 preparation method Methods 0.000 description 21
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 16
- 230000004907 flux Effects 0.000 description 14
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 13
- -1 Eu2+-activated silicate Chemical class 0.000 description 9
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 9
- 229910052909 inorganic silicate Inorganic materials 0.000 description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 8
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 8
- 229910000018 strontium carbonate Inorganic materials 0.000 description 8
- 238000010304 firing Methods 0.000 description 7
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 6
- 235000021317 phosphate Nutrition 0.000 description 6
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 6
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 5
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 150000004760 silicates Chemical class 0.000 description 5
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 4
- 239000005084 Strontium aluminate Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 3
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 3
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 229910001679 gibbsite Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 150000004679 hydroxides Chemical class 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000011656 manganese carbonate Substances 0.000 description 3
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 229910005835 GeO6 Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 229910052589 chlorapatite Inorganic materials 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 235000015250 liver sausages Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 229910000391 tricalcium phosphate Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7734—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/664—Halogenides
- C09K11/665—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/666—Aluminates; Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
- C09K11/751—Chalcogenides
- C09K11/753—Chalcogenides with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/74—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
- C09K11/75—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth containing antimony
- C09K11/755—Halogenides
- C09K11/756—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77344—Aluminosilicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7735—Germanates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7737—Phosphates
- C09K11/7738—Phosphates with alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/7737—Phosphates
- C09K11/7738—Phosphates with alkaline earth metals
- C09K11/7739—Phosphates with alkaline earth metals with halogens
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/774—Borates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
- C09K11/7751—Vanadates; Chromates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7756—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing neodynium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7795—Phosphates
- C09K11/7796—Phosphates with alkaline earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Definitions
- the invention relates to light emitting devices and more particularly to light emitting devices including at least one light-emitting diode and phosphor, the phosphor including is lead and/or copper doped chemical compounds and converting the wavelength of light.
- LEDs Light emitting devices
- LEDs which used to be used for electronic devices, are now used for automobiles and illumination products. Since light emitting devices have superior electrical and mechanical characteristics, demands for light emitting devices have been increased. In connection to this, interests in white LEDs are increasing as an alternative to fluorescent lamps and incandescent lamps.
- LED technology solution for realization of white light is proposed variously.
- realization of white LED technology is to put the phosphor on the light-emitting diode, and mix the primary emission from the light emitting diode and the secondary emission from the phosphor, which converts the wavelength.
- a blue light emitting diode which is capable of emitting a peak wavelength at 450-490 nm
- YAG group material which absorbs light from the blue light emitting diode and emits yellowish light (mostly), which may have different wavelength from that of the absorbed light
- a light emitting device can be characterized as including a light emitting diode configured to emit light and a phosphor configured to change a wavelength of the light.
- the phosphor includes a compound having a host material. Divalent copper ions and oxygen are components of the host material.
- FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention
- FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention
- FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention
- FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention
- FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention
- FIG. 6 shows emitting spectrum of a light emitting device with luminescent material consistent with this invention.
- FIG. 7 shows emitting spectrum of the light emitting device with luminescent material according to another embodiment of the invention.
- the wavelength conversion light emitting device is going to be explained in detail, and the light emitting device and the phosphor are separately is explained for easiness of explanation as below.
- FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention.
- the chip-type package light emitting device may comprise at least one light emitting diode and a phosphorescent substance. Electrodes 5 may be formed on both sides of substrate 1 . Light emitting diode 6 emitting light may be mounted on one of the electrodes 5 . Light emitting diode 6 may be mounted on electrode 5 through electrically conductive paste 9 . An electrode of light emitting diode 6 may be connected to electrode pattern 5 via an electrically conductive wire 2 .
- Light emitting diodes may emit light with a wide range of wavelengths, for example, from ultraviolet light to visible light.
- a UV light emitting diode and/or blue light emitting diode may be use.
- Phosphor i.e., a phosphorescent substance, 3 may be placed on the top and side faces of the light emitting diode 6 .
- the phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.
- Phosphor 3 converts the wavelength of the light from the light emitting diode 6 to another wavelength or other wavelengths. In one embodiment consistent with this invention, the light is in a visible light range after the conversion.
- Phosphor 3 may be applied to light emitting diode 6 after mixing phosphor 3 with a hardening resin.
- the hardening resin including phosphor 3 may also be applied to the bottom of light emitting diode 6 after mixing phosphor 3 with electrically conductive paste 9 .
- the light emitting diode 6 mounted on substrate 1 may be sealed with one or more sealing materials 10 .
- Phosphor 3 may be placed on the top and side faces of light emitting is diode 6 .
- Phosphor 3 can also be distributed in the hardened sealing material during the production. Such a manufacturing method is described in U.S. Pat. No. 6,482,664, which is hereby incorporated by reference in its entirety.
- Phosphor 3 may comprise lead and/or copper doped chemical compound(s).
- Phosphor 3 may include one or more single chemical compounds.
- the single compound may have an emission peak of, for example, from about 440 nm to about 500 nm, from about 500 nm to about 590 nm, or from about 580 nm to 700 nm.
- Phosphor 3 may include one or more single phosphors, which may have an emission peak as exemplified above.
- light emitting diode 6 may emit primary light when light emitting diode 6 receives power from a power supply.
- the primary light then may stimulate phosphor(s) 3 , and phosphor(s) 3 may convert the primary light to a light with longer wavelength(s) (a secondary light).
- the primary light from the light emitting diode 6 and the secondary light from the phosphors 3 are diffused and mixed together so that a predetermined color of light in visible spectrum may be emitted from light emitting diode 6 .
- more than one light emitting diodes that have different emission peaks can be mounted together.
- specific color of light, color temperature, and CRI can be provided.
- the light emitting diode 6 and the compound included in phosphor 3 are properly controlled then desired color temperature or specific color coordination can be provided, especially, wide range of color temperature, for example, from about 2,000K to about 8,000K or about 10,000K and/or color rendering index of greater than about 90. Therefore, the light emitting devices consistent with this invention may be used for electronic devices such as home appliances, stereos, telecommunication devices, and for interior/exterior is custom displays. The light emitting devices consistent with this invention may also be used for automobiles and illumination products because they provide similar color temperatures and CRI to those of the visible light.
- FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention.
- a top-type package light emitting device consistent with this invention may have a similar structure as that of the chip type package light emitting device 40 of FIG. 1 .
- the top-type package device may have reflector 31 which may reflect the light from the light emitting diode 6 to the desire direction.
- top-type package light emitting device 50 more than one light emitting diodes can be mounted. Each of such light emitting diodes may have a different peak wavelength from that of others.
- Phosphor 3 may comprise a plurality of single compounds with different emission peak. The proportion of each of such plurality of compounds may be regulated. Such a phosphor may be applied to the light emitting diode and/or uniformly distributed in the hardening material of the reflector 31 .
- the phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.
- the light emitting device of the FIG. or FIG. 2 can include a metal substrate, which may have good heat conductivity. Such a light emitting device may easily dissipate the heat from the light emitting diode. Therefore, light emitting devices for high power may be manufactured. If a heat sink is provided beneath the is metal substrate, the heat from the light emitting diode may be dissipated more effectively.
- FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention.
- Lamp type light emitting device 60 may have a pair of leads 51 , 52 , and a diode holder 53 may be formed at the end of one lead.
- Diode holder 53 may have a shape of cup, and one or more light emitting diodes 6 may provided in the diode holder 53 . When a number of light emitting diodes are provided in the diode holder 53 , each of them may have a different peak wavelength from that of others.
- An electrode of light emitting diode 6 may be connected to lead 52 by, for example, electrically conductive wire 2 .
- phosphor 3 Regular volume of phosphor 3 , which may be mixed in the epoxy resin, may be provided in diode holder 53 .
- phosphor 3 may include lead and/or copper doped components.
- the diode holder may include the light emitting diode 6 and the phosphor 3 may be sealed with hardening material such as epoxy resin or silicon resin.
- the lamp type package light emitting device may have more than one pair of electrode pair leads.
- FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention.
- Heat sink 71 may be provided inside of housing 73 of the light emitting device for high power 70 , and it may be partially exposed to outside.
- a pair of lead frame 74 may protrude from housing 73 .
- One or more light emitting diodes may be mounted one lead frame 74 , and an electrode of the light emitting diode 6 and another lead frame 74 may be connected via electrically conductive wire. Electrically conductive pate 9 may be provided between light is emitting diode 6 and lead frame 74 .
- the phosphor 3 may be placed on top and side faces of light emitting diode 6 .
- FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention.
- Light emitting device for high power 80 may have housing 63 , which may contain light emitting diodes 6 , 7 , phosphor 3 arranged on the top and side faces of light emitting diodes 6 , 7 , one or more heat sinks 61 , 62 , and one or more lead frames 64 .
- the lead frames 64 may receive power from a power supplier and may protrude from housing 63 .
- the phosphor 3 can be added to the paste, which may be provided between heat sink and light emitting devices.
- a lens may be combined with housing 63 , 73 .
- one or more light emitting diodes can be used selectively and the phosphor can be regulated depending on the light emitting diode.
- the phosphor may include lead and/or copper doped components.
- a light emitting device for high power consistent with this invention may have a radiator (not shown) and/or heat sink(s). Air or a fan may be used to cool the radiator.
- the light emitting devices consistent with this invention is not limited to the structures described above, and the structures can be modified depending on the characteristics of light emitting diodes, phosphor, wavelength of light, and also applications. Moreover, new part can be added to the structures.
- An exemplary phosphor consistent with this invention is as follows.
- Phosphor in consistence with this invention may include lead and/or copper doped chemical compounds.
- the phosphor may be excited by UV and/or visible light, for example, blue light.
- the compound may include Aluminate, Silicate, Antimonate, Germanate, Germanate-silicate, or Phosphate type compounds.
- Aluminate type compounds may comprise compounds having formula (1), (2), and/or (5)
- M′ may be Pb, Cu, and/or any combination thereof
- M′′ may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof
- M′′′ may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof
- M′′′′ may be one or more trivalent elements, for example, Sc, B, Ga, In, and/or any combination thereof
- M′′′′′ may be Si, Ge, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof
- M′′′′′′ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof
- X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇
- M′ may be Pb, Cu, and/or any combination thereof
- M′′ may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof
- M′′′ may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof
- M′′′′ may be Bi, Sn, Sb, Sc, Y, La, In, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and any combination thereof
- X may be F, Cl, Br, J, and any combination thereof; 0 ⁇ a ⁇ 4; 0 ⁇ b ⁇ 2; 0 ⁇ c ⁇ 2; 0 ⁇ d ⁇ 1; 0 ⁇ e ⁇ 1; 0 ⁇ f ⁇ 1; 0 ⁇ g ⁇ 1; 0 ⁇ h ⁇ 2; 1 ⁇ x ⁇ 2; and 1 ⁇ y ⁇ 5.
- the preparation of copper as well as lead doped luminescent materials may be a basic solid state reaction. Pure starting materials without any impurities, e.g. iron, may be used. Any starting material which may transfer into oxides via a heating process may be used to form oxygen dominated phosphors.
- the starting materials in the form of oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, e.g., H 3 BO 3 .
- the mixture may be fired in an alumina crucible in a first step at about 1,200° C. for about one hour. After milling the pre-fired materials a second firing step at about 1,450° C. in a reduced atmosphere for about 4 hours may be followed. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum of about 494 nm.
- the starting materials in form of very pure oxides, carbonates, or other components which may decompose thermically into oxides may be mixed in stoichiometric proportion together with small amounts of flux, for example, H 3 BO 3 .
- the mixture may be fired in an alumina crucible at about 1,200° C. for about one hour in the air. After milling the pre-fired materials a second firing step at about 1,450° C. in air for about 2 hours and in a reduced atmosphere for about 2 hours may be followed. Then the material may be milled, washed, dried, and sieved.
- the resulting luminescent material may have an emission maximum of from about 494.5 nm.
- M′ may be Pb, Cu, and/or any combination thereof;
- M′′ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof;
- M′′′ may be B, Ga, In, and/or any combination thereof;
- M′′′′ may be Si, Ge, Ti, Zr, Hf, and/or any combination thereof;
- M′′′′′ may is be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; 0 ⁇ a ⁇ 1; 0 ⁇ b ⁇ 2; 0 ⁇ c ⁇ 8; 0 ⁇ d ⁇ 1; 0 ⁇ e ⁇ 1; 0 ⁇ f ⁇ 2; 1 ⁇ x ⁇ 2; and 1 ⁇ y ⁇ 5.
- the starting materials in the form of, for example, pure oxides and/or as carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF 3 .
- the mixture may be fired in an alumina crucible at about 1,250° C. in a reduced atmosphere for about 3 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum of about 521.5 nm.
- the starting materials in the form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF 3 .
- the mixture may be fired in an alumina crucible at about 1,420° C. in a reduced atmosphere for about 2 hours. After that the material may be milled, washed, dried, and sieved.
- the resulting luminescent material may have an emission maximum of about 452 nm.
- the starting materials in form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, H 3 BO 3 .
- the mixture may be fired in an alumina crucible at about 1,000° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,420° C. in the air for about 1 hour and in a reduced atmosphere for about 2 hours may be followed. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum of about 521 nm.
- a lead and/or copper doped silicates having formula (9) having formula (9)
- M′ may be Pb, Cu, and/or any combination thereof
- M′′ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof
- M′′′ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof
- M′′′′ may be Al, Ga, In, and/or any combination thereof
- M′′′′′ may be Ge, V, Nb, Ta, W, Mo, Ti, Zr, Hf, and/or any combination thereof
- M′′′′′′ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof
- X may be F, Cl, Br, J, and any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 8; 0 ⁇ c ⁇ 4; 0 ⁇ d ⁇ 2; 0 ⁇ e ⁇ 2; 0 ⁇ f
- the starting materials in the form of pure oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,200° C. in an inert gas atmosphere (e.g., N 2 or noble gas) for about 2 hours. Then the material may be milled. After that, the material may be fired in an alumina crucible at about 1,200° C. in a slightly reduced atmosphere for about 2 hours. Then, the material may be milled, washed, dried, and sieved.
- the resulting luminescent material may have an emission maximum at about 592 nm.
- the starting materials in the form of very pure oxides and carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,100° C. in a reduced atmosphere for about 2 hours. Then the material may be milled. After that the material may be fired in an alumina crucible at about 1,235° C. in a reduced atmosphere for about 2 hours. Then that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 467 nm.
- the starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,000° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at 1,220° C. in air for 4 hours and in reducing atmosphere for 2 hours may be followed. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 527 nm.
- the starting materials in the form of oxides, chlorides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible in a first step at about 1,100° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,220° C. in the air for about 4 hours and in a reduced atmosphere for about 1 hour may be followed. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 492 nm.
- M′ may be Pb, Cu, and/or any combination thereof
- M′′ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof
- M′′′ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof
- M′′′′ may be Bi, Sn, Sc, Y, La, Pr, Sm, Eu, Tb, Dy, Gd, and/or any combination thereof
- X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 2; 0 ⁇ c ⁇ 4; 0 ⁇ d ⁇ 8; 0 ⁇ e ⁇ 8; 0 ⁇ f ⁇ 2; 1 ⁇ x ⁇ 2; and 1 ⁇ y ⁇ 5.
- the starting materials in the form of oxides may be mixed in stoichiometric proportion together with small amounts of flux.
- the mixture may be fired in an alumina crucible at about 985° C. in the air for about 2 hours. After pre-firing the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,200° C. in an atmosphere containing oxygen for about 8 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 626 nm.
- the starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux.
- the mixture may be fired in an alumina crucible at about 975° C. in the air for about 2 hours. After pre-firing the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,175° C. in the air for about 4 hours and then in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 637 nm.
- Lead doped antimonate compared with antimonate without lead at 400 nm excitation wavelength.
- Lead doped compound Compound without lead Pb 0.006 Ca 0.6 Sr 0.394 Sb 0 O 6 Ca 0.6 Sr 0.4 Sb 2 O 6 Luminous 102 100 density (%) Wavelength (nm) 637 638
- M′ may be Pb, Cu, and/or any combination thereof;
- M′′ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof;
- M′′′ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, and/or any combination thereof;
- M′′′′ may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof;
- M′′′′′ may be Si, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof;
- M′′′′′′ may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, and/or any combination thereof;
- X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 2; 0 ⁇ c ⁇ 10; 0 ⁇ d ⁇ 10; 0 ⁇ e ⁇ 14; 0 ⁇ f ⁇ 14; 0 ⁇ g ⁇ 10; 0 ⁇ h ⁇ 2; 1 ⁇ o
- the starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,200° C. in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,200° C. in oxygen containing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 655 nm.
- the starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH 4 Cl.
- the mixture may be fired in an alumina crucible at about 1,100° C. in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again.
- the mixture may be fired in an alumina crucible at about 1,180° C. in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved.
- the resulting luminescent material may have an emission maximum at about 658 nm.
- M′ may be Pb, Cu, and/or any combination thereof;
- M′′ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof;
- M′′′ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof;
- M′′′′ may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof;
- M′′′′′ may be Si, Ge, Ti, Zr, Hf, V, Nb, Ta, W, Mo, and/or any combination thereof;
- M′′′′′′ may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, Ce, Tb, and/or any combination thereof;
- X may be F, Cl, Br, J, and/or any combination thereof; 0 ⁇ a ⁇ 2; 0 ⁇ b ⁇ 12; 0 ⁇ c ⁇ 16; 0 ⁇ d ⁇ 3; 0 ⁇ e ⁇ 5; 0 ⁇ f ⁇ 3; 0 ⁇ g ⁇ 2;
- the starting materials in the form of oxides, phosphates, and/or carbonates and chlorides may be mixed in stoichiometric proportions together with small amounts of flux.
- the mixture may be fired in an alumina crucible at about 1,240° C. in reducing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved.
- the luminescent material may have an emission maximum at about 450 nm.
- the phosphor of the light emitting device consistent with this invention can comprise aluminate, silicate, antimonate, germanate, phosphate type chemical compound, and any combination thereof.
- FIG. 6 is a one of the embodiment's emission spectrum according to the invention, which the phosphor is used for the light emitting device.
- the embodiment may have a light emitting diode with 405 nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio.
- the phosphor may be composed of Cu 0.05 BaMg 1.95 Al 16 O 27 :Eu which may have peak wavelength at about 451 nm, Cu 0.03 Sr 1.5 Ca 0.47 SiO 4 :Eu which may have peak wavelength at 586 nm, Pb 0.006 Ca 0.6 Sr 0.394 Sb 2 O 6 :Mn 4+ which may have peak wavelength at about 637 nm, Pb 0.15 Ba 1.84 Zn 0.01 Si 0.99 Zr 0.01 O 4 :Eu is which may have peak wavelength at around 512 nm, and Cu 0.2 Sr 3.8 Al 14 O 25 :Eu which may have peak wavelength at about 494 nm.
- part of the initial about 405 nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2 nd wavelength.
- the 1 st and 2 nd light are mixed together and the desire emission is produced.
- the light emitting device convert the 1 st UV light of 405 nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 3,000K and CRI is about 90 to about 95.
- FIG. 7 is another embodiment's emission spectrum according to the invention, which the phosphor is applied for the light emitting device.
- the embodiment may have a light emitting diode with about 455 nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio.
- the phosphor is composed of Cu 0.05 Sr 1.7 Ca 0.25 SiO 4 :Eu which may have peak wavelength at about 592 nm, Pb 0.1 Ba 0.95 Sr 0.95 Si 0.998 Ge 0.002 O 4 :Eu which may have peak wavelength at about 527 nm, and Cu 0.05 Li 0.002 Sr 1.5 Ba 0.448 SiO 4 :Gd, Eu which may have peak is wavelength at about 557 nm.
- part of the initial about 455 nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2 nd wavelength.
- the 1 st and 2 nd light is mixed together and the desire emission is produced.
- the light emitting device convert the 1 st blue light of about 455 nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 4,000K to about 6,500K and CRI is about 86 to about 93.
- the phosphor of the light emitting device according to the invention can be applied by single chemical compound or mixture of plurality of single chemical compound besides the embodiments in relation to FIG. 6 and FIG. 7 , which are explained above.
- light emitting device with wide range of color temperature about 2,000K or about 8,000K or about 10,000K and superior color rendering index more than about 90 can be realized by using the lead and/or copper doped chemical compounds containing rare earth elements.
- wavelength conversion light emitting device is capable of applying on mobile phone, note book and electronic devices such as home appliance, stereo, telecommunication products, but also for custom display's key pad and back light application. Moreover, it can be applied for automobile, medical instrument and illumination products.
- the invention is also able to provide a wavelength conversion light emitting device with stability against water, humidity, vapor as well as other polar solvents.
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Surgical Instruments (AREA)
Abstract
A light emitting device can be characterized as including a light emitting diode configured to emit light and a phosphor configured to change a wavelength of the light. The phosphor substantially covers at least a portion of the light emitting diode. The phosphor includes a compound having a host material. Divalent copper ions and oxygen are components of the host material.
Description
- This application is a continuation of U.S. patent application Ser. No. 12/098,263, filed Apr. 4, 2008, which is a continuation of U.S. application Ser. No. 11/024,702, filed Dec. 30, 2004, now U.S. Pat. No. 7,554,129, and also claims priority of Korean Patent Application No. 2004-042396, filed Jun. 10, 2004, the contents of which are incorporated herein by reference in their entirety.
- The invention relates to light emitting devices and more particularly to light emitting devices including at least one light-emitting diode and phosphor, the phosphor including is lead and/or copper doped chemical compounds and converting the wavelength of light.
- Light emitting devices (LEDs), which used to be used for electronic devices, are now used for automobiles and illumination products. Since light emitting devices have superior electrical and mechanical characteristics, demands for light emitting devices have been increased. In connection to this, interests in white LEDs are increasing as an alternative to fluorescent lamps and incandescent lamps.
- In LED technology, solution for realization of white light is proposed variously. Normally, realization of white LED technology is to put the phosphor on the light-emitting diode, and mix the primary emission from the light emitting diode and the secondary emission from the phosphor, which converts the wavelength. For example, as shown in WO 98/05078 and WO 98/12757, use a blue light emitting diode, which is capable of emitting a peak wavelength at 450-490 nm, and YAG group material, which absorbs light from the blue light emitting diode and emits yellowish light (mostly), which may have different wavelength from that of the absorbed light
- However, in such a usual white LED, color temperature range is narrow which is between about 6,000-8,000K, and CRI (Color Rendering Index) is about 60 to 75. Therefore, it is hard to produce the white LED with color coordination and color temperature that are similar to those of the visible light. It is one of the reasons why only white light color with a cold feeling could be realized. Moreover, phosphors which are used for white LEDs are usually unstable in the water, vapor or polar solvent, and this unstableness may cause changes in the emitting characteristics of white LED.
- A light emitting device can be characterized as including a light emitting diode configured to emit light and a phosphor configured to change a wavelength of the light. The phosphor includes a compound having a host material. Divalent copper ions and oxygen are components of the host material.
- Further aspects of the invention may be apparent upon consideration of the following detailed description, taken in conjunction with the accompanying drawings, in which like reference characters refer to like parts throughout, and in which:
-
FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention; -
FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention; -
FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention; -
FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention; -
FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention; -
FIG. 6 shows emitting spectrum of a light emitting device with luminescent material consistent with this invention; and -
FIG. 7 shows emitting spectrum of the light emitting device with luminescent material according to another embodiment of the invention. - Refer to the attached drawing, the wavelength conversion light emitting device is going to be explained in detail, and the light emitting device and the phosphor are separately is explained for easiness of explanation as below.
- (Light Emitting Device)
-
FIG. 1 shows a side cross-sectional view of an illustrative embodiment of a portion of a chip-type package light emitting device consistent with this invention. The chip-type package light emitting device may comprise at least one light emitting diode and a phosphorescent substance.Electrodes 5 may be formed on both sides ofsubstrate 1.Light emitting diode 6 emitting light may be mounted on one of theelectrodes 5.Light emitting diode 6 may be mounted onelectrode 5 through electricallyconductive paste 9. An electrode oflight emitting diode 6 may be connected toelectrode pattern 5 via an electricallyconductive wire 2. - Light emitting diodes may emit light with a wide range of wavelengths, for example, from ultraviolet light to visible light. In one embodiment consistent with this invention, a UV light emitting diode and/or blue light emitting diode may be use.
- Phosphor, i.e., a phosphorescent substance, 3 may be placed on the top and side faces of the
light emitting diode 6. The phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof.Phosphor 3 converts the wavelength of the light from thelight emitting diode 6 to another wavelength or other wavelengths. In one embodiment consistent with this invention, the light is in a visible light range after the conversion.Phosphor 3 may be applied tolight emitting diode 6 after mixingphosphor 3 with a hardening resin. The hardeningresin including phosphor 3 may also be applied to the bottom oflight emitting diode 6 after mixingphosphor 3 with electricallyconductive paste 9. - The
light emitting diode 6 mounted onsubstrate 1 may be sealed with one or moresealing materials 10.Phosphor 3 may be placed on the top and side faces of light emitting isdiode 6.Phosphor 3 can also be distributed in the hardened sealing material during the production. Such a manufacturing method is described in U.S. Pat. No. 6,482,664, which is hereby incorporated by reference in its entirety. -
Phosphor 3 may comprise lead and/or copper doped chemical compound(s).Phosphor 3 may include one or more single chemical compounds. The single compound may have an emission peak of, for example, from about 440 nm to about 500 nm, from about 500 nm to about 590 nm, or from about 580 nm to 700 nm.Phosphor 3 may include one or more single phosphors, which may have an emission peak as exemplified above. - In regard to
light emitting device 40,light emitting diode 6 may emit primary light whenlight emitting diode 6 receives power from a power supply. The primary light then may stimulate phosphor(s) 3, and phosphor(s) 3 may convert the primary light to a light with longer wavelength(s) (a secondary light). The primary light from thelight emitting diode 6 and the secondary light from thephosphors 3 are diffused and mixed together so that a predetermined color of light in visible spectrum may be emitted fromlight emitting diode 6. In one embodiment consistent with this invention, more than one light emitting diodes that have different emission peaks can be mounted together. Moreover, if the mixture ratio of phosphors is adjusted properly, specific color of light, color temperature, and CRI can be provided. - As described above, if the
light emitting diode 6 and the compound included inphosphor 3 are properly controlled then desired color temperature or specific color coordination can be provided, especially, wide range of color temperature, for example, from about 2,000K to about 8,000K or about 10,000K and/or color rendering index of greater than about 90. Therefore, the light emitting devices consistent with this invention may be used for electronic devices such as home appliances, stereos, telecommunication devices, and for interior/exterior is custom displays. The light emitting devices consistent with this invention may also be used for automobiles and illumination products because they provide similar color temperatures and CRI to those of the visible light. -
FIG. 2 shows a side cross-sectional view of an illustrative embodiment of a portion of a top-type package light emitting device consistent with this invention. A top-type package light emitting device consistent with this invention may have a similar structure as that of the chip type packagelight emitting device 40 ofFIG. 1 . The top-type package device may havereflector 31 which may reflect the light from thelight emitting diode 6 to the desire direction. - In top-type package
light emitting device 50, more than one light emitting diodes can be mounted. Each of such light emitting diodes may have a different peak wavelength from that of others.Phosphor 3 may comprise a plurality of single compounds with different emission peak. The proportion of each of such plurality of compounds may be regulated. Such a phosphor may be applied to the light emitting diode and/or uniformly distributed in the hardening material of thereflector 31. As explained more fully below, the phosphor in consistent with this invention may include lead and/or copper doped aluminate type compounds, lead and/or copper doped silicates, lead and/or copper doped antimonates, lead and/or copper doped germanates, lead and/or copper doped germanate-silicates, lead and/or copper doped phosphates, or any combination thereof. - In one embodiment consistent with this invention, the light emitting device of the FIG. or
FIG. 2 can include a metal substrate, which may have good heat conductivity. Such a light emitting device may easily dissipate the heat from the light emitting diode. Therefore, light emitting devices for high power may be manufactured. If a heat sink is provided beneath the is metal substrate, the heat from the light emitting diode may be dissipated more effectively. -
FIG. 3 shows a side cross-sectional view of an illustrative embodiment of a portion of a lamp-type package light emitting device consistent with this invention. Lamp typelight emitting device 60 may have a pair ofleads diode holder 53 may be formed at the end of one lead.Diode holder 53 may have a shape of cup, and one or morelight emitting diodes 6 may provided in thediode holder 53. When a number of light emitting diodes are provided in thediode holder 53, each of them may have a different peak wavelength from that of others. An electrode oflight emitting diode 6 may be connected to lead 52 by, for example, electricallyconductive wire 2. - Regular volume of
phosphor 3, which may be mixed in the epoxy resin, may be provided indiode holder 53. As explained more fully below,phosphor 3 may include lead and/or copper doped components. - Moreover, the diode holder may include the
light emitting diode 6 and thephosphor 3 may be sealed with hardening material such as epoxy resin or silicon resin. - In one embodiment consistent with this invention, the lamp type package light emitting device may have more than one pair of electrode pair leads.
-
FIG. 4 shows a side cross-sectional view of an illustrative embodiment of a portion of a light emitting device for high power consistent with this invention.Heat sink 71 may be provided inside ofhousing 73 of the light emitting device forhigh power 70, and it may be partially exposed to outside. A pair oflead frame 74 may protrude fromhousing 73. - One or more light emitting diodes may be mounted one
lead frame 74, and an electrode of thelight emitting diode 6 and anotherlead frame 74 may be connected via electrically conductive wire. Electricallyconductive pate 9 may be provided between light is emittingdiode 6 and leadframe 74. Thephosphor 3 may be placed on top and side faces oflight emitting diode 6. -
FIG. 5 shows a side cross-sectional view of another illustrative embodiment of a portion of a light emitting device for high power consistent with this invention. - Light emitting device for
high power 80 may havehousing 63, which may contain light emittingdiodes 6, 7,phosphor 3 arranged on the top and side faces oflight emitting diodes 6, 7, one ormore heat sinks housing 63. - In the light emitting devices for
high power FIGS. 4 and 5 , thephosphor 3 can be added to the paste, which may be provided between heat sink and light emitting devices. A lens may be combined withhousing - In a light emitting device for high power consistent with this invention, one or more light emitting diodes can be used selectively and the phosphor can be regulated depending on the light emitting diode. As explained more fully below, the phosphor may include lead and/or copper doped components.
- A light emitting device for high power consistent with this invention may have a radiator (not shown) and/or heat sink(s). Air or a fan may be used to cool the radiator.
- The light emitting devices consistent with this invention is not limited to the structures described above, and the structures can be modified depending on the characteristics of light emitting diodes, phosphor, wavelength of light, and also applications. Moreover, new part can be added to the structures.
- An exemplary phosphor consistent with this invention is as follows.
- (Phosphor)
- Phosphor in consistence with this invention may include lead and/or copper doped chemical compounds. The phosphor may be excited by UV and/or visible light, for example, blue light. The compound may include Aluminate, Silicate, Antimonate, Germanate, Germanate-silicate, or Phosphate type compounds.
- Aluminate type compounds may comprise compounds having formula (1), (2), and/or (5)
-
a(M′O).b(M″2O).c(M″X).dAl2O3 e(M′″O).f(M″″2O3).g(M′″″oOp)h(M″″″xOy) (1) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be one or more trivalent elements, for example, Sc, B, Ga, In, and/or any combination thereof; M′″″ may be Si, Ge, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof; M″″″ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦2; 0≦c≦2; 0≦d≦8; 0<e≦4; 0≦f≦3; 0≦g≦8; 0<h≦2; 1≦o≦2; 1≦p≦5; 1≦x≦2; and 1≦y≦5.
-
a(M′O).b(M″2O).c(M″X)4-a-b-c(M′″O).7(Al2O3).d(B2O3).e(Ga2O3).f(SiO2).g(GeO2).h(M″″xOy) (2) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be one or more monovalent elements, for example, Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be one or more divalent elements, for example, Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be Bi, Sn, Sb, Sc, Y, La, In, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and any combination thereof; X may be F, Cl, Br, J, and any combination thereof; 0<a≦4; 0≦b≦2; 0≦c≦2; 0≦d≦1; 0≦e≦1; 0≦f≦1; 0≦g≦1; 0<h≦2; 1≦x≦2; and 1≦y≦5.
- The preparation of copper as well as lead doped luminescent materials may be a basic solid state reaction. Pure starting materials without any impurities, e.g. iron, may be used. Any starting material which may transfer into oxides via a heating process may be used to form oxygen dominated phosphors.
- Examples of Preparation:
- Preparation of the luminescent material having formula (3)
-
Cu0.02Sr3.98Al14O25:Eu (3) - Starting materials: CuO, SrCO3, Al(OH)3, Eu2O3, and/or any combination thereof.
- The starting materials in the form of oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, e.g., H3BO3. The mixture may be fired in an alumina crucible in a first step at about 1,200° C. for about one hour. After milling the pre-fired materials a second firing step at about 1,450° C. in a reduced atmosphere for about 4 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 494 nm.
-
TABLE 1 copper doped Eu2+-activated aluminate compared with Eu2+-activated aluminate without copper at about 400 nm excitation wavelength. Compound Copper doped compound without copper Cu0.02Sr3.98Al14O25:Eu Sr4Al14O25:Eu Luminous density (%) 103.1 100 Wavelength (nm) 494 493 - Preparation of the luminescent material having formula (4)
-
Pb0.5Sr3.95Al14O25:Eu (4) - Starting materials: PbO, SrCO.sub.3, Al.sub.2O.sub.3, Eu.sub.2O.sub.3, and/or any combination thereof.
- The starting materials in form of very pure oxides, carbonates, or other components which may decompose thermically into oxides, may be mixed in stoichiometric proportion together with small amounts of flux, for example, H3BO3. The mixture may be fired in an alumina crucible at about 1,200° C. for about one hour in the air. After milling the pre-fired materials a second firing step at about 1,450° C. in air for about 2 hours and in a reduced atmosphere for about 2 hours may be followed. Then the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum of from about 494.5 nm.
-
TABLE 2 lead doped Eu2+-activated aluminate compared with Eu2+-activated aluminate without lead at about 400 nm excitation wavelength Lead doped compound Compound without lead Pb0.05Sr3.95Al14O25:Eu Sr4Al14O25:Eu Luminous density (%) 101.4 100 Wavelength (nm) 494.5 493 -
TABLE 3 optical properties of some copper and/or lead doped aluminates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at 400 nm excitation wavelength. Luminous density at 400 nm Peak wave Peak wave excitation length of length of Possible compared with lead/copper materials excitation copper/lead not doped without range doped materials lead/copper Composition (nm) compounds (%) (nm) (nm) Cu0.5Sr3.5Al14O25:Eu 360-430 101.2 495 493 Cu0.02Sr3.98Al14O25:Eu 360-430 101.4 494.5 493 Pb0.05Sr3.95Al14O25:Eu 360-430 103. 494.5 493 Cu0.01Sr3.99Al13.995Si0.005O25:Eu 360-430 103 494 492 Cu0.01Sr3.395Ba0.595Al14O25:Eu, Dy 360-430 100.8 494 493 Pb0.05Sr3.95Al13.95Ga0.05O25:Eu 360-430 101.5 494 494 -
a(M′O).b(M″O).c(Al2O3).d(M′″2O3).e(M″″O2).f(M′″″-xOy) (5) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M′″ may be B, Ga, In, and/or any combination thereof; M″″ may be Si, Ge, Ti, Zr, Hf, and/or any combination thereof; M′″″ may is be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; 0<a≦1; 0≦b≦2; 0<c≦8; 0≦d≦1; 0≦e≦1; 0<f≦2; 1≦x≦2; and 1≦y≦5.
- Example of Preparation:
- Preparation of the luminescent material having formula (6)
-
Cu0.05Sr0.95Al1.9997Si0.0003O4:Eu (6) - Starting materials: CuO, SrCO3, Al2O3, SiO3, Eu2O3, and/or any combination thereof.
- The starting materials in the form of, for example, pure oxides and/or as carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF3. The mixture may be fired in an alumina crucible at about 1,250° C. in a reduced atmosphere for about 3 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 521.5 nm.
-
TABLE 4 copper doped Eu2+-activated aluminate compared with Eu2+-activated aluminate without copper at about 400 nm excitation wavelength. Compound Copper doped compound without copper Cu0.05Sr0.95Al1.9997Si0.0003O4:Eu SrAl2O4:Eu Luminous density (%) 106 100 Wavelength (nm) 521.5 519 - Preparation of the luminescent material having formula (7)
-
Cu0.12BaMg1.88Al16O27:Eu (7) - Starting materials: CuO, MgO, BaCO3, Al(OH)3, Eu2O3, and/or any combination thereof.
- The starting materials in the form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, AlF3. The mixture may be fired in an alumina crucible at about 1,420° C. in a reduced atmosphere for about 2 hours. After that the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum of about 452 nm.
-
TABLE 5 copper doped Eu2+-activated aluminate compared with copper not doped Eu2+-activated aluminate at 400 nm excitation wavelength. Compound Copper doped compound without copper Cu0.12BaMg1.88Al16O27:Eu BaMg2Al16O27:Eu Luminous density (%) 101 100 Wavelength (nm) 452 450 - Preparation of the luminescent material having formula (8) (8)
-
Pb0.1Sr0.9Al2O4:Eu (8) - Starting materials: PbO, SrCO3, Al(OH)3, Eu2O3, and/or any combination thereof.
- The starting materials in form of, for example, pure oxides, hydroxides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, H3BO3. The mixture may be fired in an alumina crucible at about 1,000° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,420° C. in the air for about 1 hour and in a reduced atmosphere for about 2 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum of about 521 nm.
-
TABLE 6 lead doped Eu2+-activated aluminate compared with Eu2+-activated aluminate without lead at about 400 nm excitation wavelength. Lead doped compound Compound without lead Pb0.1Sr0.9Al2O4:Eu SrAl2O4:Eu Luminous density (%) 102 100 Wavelength (nm) 521 519 - Results obtained in regard to copper and/or lead doped aluminates are shown in table 7.
-
TABLE 7 optical properties of some copper and/or lead doped aluminates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at 400 nm excitation wavelength. Luminous density at 400 nm Peak wave Peak wave excitation length of length of Possible compared with lead/copper materials excitation copper/lead not doped without range doped materials lead/copper Composition (nm) compounds (%) (nm) (nm) Cu0.05Sr0.95Al1.9997Si0.0003O4:Eu 360-440 106 521.5 519 Cu0.2Mg0.7995Li0.0005Al1.9Ga0.1O4:Eu, Dy 360-440 101.2 482 480 Pb0.1Sr0.09Al2O4:Eu 360-440 102 521 519 Cu0.05BaMg1.95Al16O27:Eu, Mn 360-400 100.5 451, 515 450, 515 Cu0.12BaMg1.88Al16O27:Eu 360-400 101 452 449 Cu0.01BaMg0.99Al10O17:Eu 360-400 102.5 451 449 Cu0.01BaMg0.9Al9.5Ga0.5O17:Eu, Dy 360-400 100.8 448 450 Pb0.08Sr0.902Al2O4:Eu, Dy 360-440 102.4 521 519 Pb0.2Sr0.8Al2O4:Mn 360-440 100.8 658 655 Cu0.06Sr0.94Al2O4:Eu 360-440 102.3 521 519 Cu0.05Ba0.94Pb0.06Mg0.95Al10O17:Eu 360-440 100.4 451 449 Pb0.3Ba0.7Cu0.1Mg1.9Al16O27:Eu 360-400 100.8 452 450 Pb0.3Ba0.7Cu0.1Mg1.9Al16O27:Eu, Mn 360-400 100.4 452, 515 450, 515 - A lead and/or copper doped silicates having formula (9)
-
a(M′O).b(M″O).c(M′″X).d(M′″2O).e(M″″2O3).f(M′″″oOp).g(SiO2).h(M″″″xOy) (9) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M′″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M″″ may be Al, Ga, In, and/or any combination thereof; M′″″ may be Ge, V, Nb, Ta, W, Mo, Ti, Zr, Hf, and/or any combination thereof; M″″″ may be Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or any combination thereof; X may be F, Cl, Br, J, and any combination thereof; 0<a≦2; 0<b≦8; 0≦c≦4; 0≦d≦2; 0≦e≦2; 0≦f≦2; 0≦g≦10; 0<h≦5; 1≦o≦2; 1≦p≦5; 1≦x≦2; and 1≦y≦5.
- Example of Preparation:
- Preparation of the luminescent material having formula (10)
-
Cu0.05Sr1.7Ca0.25SiO4:Eu (10) - Starting materials: CuO, SrCO3, CaCO3, SiO2, Eu2O3, and/or any combination thereof.
- The starting materials in the form of pure oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. The mixture may be fired in an alumina crucible at about 1,200° C. in an inert gas atmosphere (e.g., N2 or noble gas) for about 2 hours. Then the material may be milled. After that, the material may be fired in an alumina crucible at about 1,200° C. in a slightly reduced atmosphere for about 2 hours. Then, the material may be milled, washed, dried, and sieved. The resulting luminescent material may have an emission maximum at about 592 nm.
-
TABLE 8 copper doped Eu2+-activated silicate compared with Eu2+-activated silicate without copper at about 400 nm excitation wavelength. Copper doped compound Compound without copper Cu0.05Sr1.7Ca0.25SiO4:Eu Si1.7Ca0.3SiO4:Eu Luminous 104 100 density (%) Wavelength (nm) 592 588 - Preparation of the Luminescent Material Having Formula (11):
-
Cu0.2Ba2Zn0.2Mg0.6Si2O7:Eu (11) - Starting materials: CuO, BaCO3, ZnO, MgO, SiO2, Eu2O3, and/or any combination thereof.
- The starting materials in the form of very pure oxides and carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. In a first step the mixture may be fired in an alumina crucible at about 1,100° C. in a reduced atmosphere for about 2 hours. Then the material may be milled. After that the material may be fired in an alumina crucible at about 1,235° C. in a reduced atmosphere for about 2 hours. Then that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 467 nm.
-
TABLE 9 copper doped Eu2+-activated silicate compared with Eu2+-activated silicate without copper at 400 nm excitation wavelength. Compound Copper doped compound without copper Cu0.2Sr2Zn0.2Mg0.6Si2O7:Eu Sr2Zn2Mg0.6Si2O7:Eu Luminous 101.5 100 density (%) Wavelength (nm) 467 465 - Preparation of the luminescent material having formula (12)
-
Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu (12) - Starting materials: PbO, SrCO3, BaCO3, SiO2, GeO2, Eu2O3, and/or any combination thereof.
- The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. The mixture may be fired in an alumina crucible at about 1,000° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at 1,220° C. in air for 4 hours and in reducing atmosphere for 2 hours may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 527 nm.
-
TABLE 10 lead doped Eu2+-activated silicate compared with Eu2+-activated silicate without lead at about 400 nm excitation wavelength. Compound Lead doped compound without lead Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu BaSrSiO4:Eu Luminous 101.3 100 density (%) Wavelength (nm) 527 525 - Preparation of the luminescent material having formula (13)
-
Pb0.25Sr3.75Si3O8Cl4:Eu (13) - Starting materials: PbO, SrCO3, SrCl2, SiO2, Eu2O3, and any combination thereof.
- The starting materials in the form of oxides, chlorides, and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. The mixture may be fired in an alumina crucible in a first step at about 1,100° C. for about 2 hours in the air. After milling the pre-fired materials a second firing step at about 1,220° C. in the air for about 4 hours and in a reduced atmosphere for about 1 hour may be followed. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 492 nm.
-
TABLE 11 lead doped Eu2+-activated chlorosilicate compared with Eu2+-activated chlorosilicate without lead at 400 nm excitation wavelength. Lead doped compound Compound without lead Pb0.25Sr3.75Si3O8Cl4:Eu Sr4Si3O8Cl4:Eu Luminous 100.6 100 density (%) Wavelength (nm) 492 490 - Results obtained with respect to copper and/or lead doped silicates are shown in table 12.
-
TABLE 12 optical properties of some copper and/or lead doped rare earth activated silicates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength. Luminous density at 400 nm Peak wave Peak wave excitation length of length of Possible compared with lead/copper materials excitation copper/lead not doped without range doped materials lead/copper Composition (nm) compounds (%) (nm) (nm) Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu 360-470 101.3 527 525 Cu0.02(Ba,Sr,Ca,Zn)1.98SiO4:Eu 360-500 108.2 565 560 Cu0.05Sr1.7Ca0.25SiO4:Eu 360-470 104 592 588 Cu0.05Li0.002Sr1.5Ba0.448SiO4:Gd, Eu 360-470 102.5 557 555 Cu0.2Sr1Zu0.2Mg0.5Si1O7:Eu 360-450 101.5 467 465 Cu0.02Ba2.8Sr0.2Mg0.98Si2O8:Eu, Mn 360-420 100.8 440, 660 438, 660 Pb0.25Sr3.75Si3O8Cl4:Eu 360-470 100.6 492 490 Cu0.2Ba2.2Sr0.75Pb0.05Zn0.8Si2O8:Eu 360-430 100.8 448 445 Cu0.2Ba3Mg0.8Si1.99Ge0.01O8:Eu 360-430 101 444 440 Cu0.5Zn0.5Ba2Ge0.2Si1.8O7:Eu 360-420 102.5 435 433 Cu0.8Mg0.2Ba3Si2O8:Eu, Mn 360-430 103 438, 670 435, 670 Pb0.15Ba1.84Zn0.01Si0.99Zr0.01O4:Eu 360-500 101 512 510 Cu0.2Ba5Ca2.8Si4O16:Eu 360-470 101.8 495 491 - With lead and/or copper doped antimonates having formula (14)
-
a(M′O).b(M″2O).c(M″X).d(Sb2O5).e(M′″O).f(M″″xOy) (14) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be Bi, Sn, Sc, Y, La, Pr, Sm, Eu, Tb, Dy, Gd, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦2; 0≦c≦4; 0<d≦8; 0≦e≦8; 0≦f≦2; 1≦x≦2; and 1≦y≦5.
- Examples of Preparation:
- Preparation of the luminescent material having formula (15)
-
Cu0.2Mg1.7Li0.2Sb2O7:Mn (15) - Starting materials: CuO, MgO, Li2O, Sb2O5, MnCO3, and/or any combination is thereof.
- The starting materials in the form of oxides may be mixed in stoichiometric proportion together with small amounts of flux. In a first step the mixture may be fired in an alumina crucible at about 985° C. in the air for about 2 hours. After pre-firing the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,200° C. in an atmosphere containing oxygen for about 8 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 626 nm.
-
TABLE 13 copper doped antimonate compared with antimonate without copper at about 400 nm excitation wavelength. Comparison Copper doped compound without copper Cu0.2Mg1.7Li0.2Sb2O7:Mn Mg2Li0.2Sb2O7:Mn Luminous density (%) 101.8 100 Wavelength (nm) 652 650 - Preparation of the luminescent material having formula (16)
-
Pb0.006Ca0.6Sr0.394Sb2O6 (16) - Starting materials: PbO, CaCO3, SrCO3, Sb2O5, and/or any combination thereof.
- The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux. In a first step the mixture may be fired in an alumina crucible at about 975° C. in the air for about 2 hours. After pre-firing the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,175° C. in the air for about 4 hours and then in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 637 nm.
-
TABLE 14 lead doped antimonate compared with antimonate without lead at 400 nm excitation wavelength. Lead doped compound Compound without lead Pb0.006Ca0.6Sr0.394Sb0O6 Ca0.6Sr0.4Sb2O6 Luminous 102 100 density (%) Wavelength (nm) 637 638 - Results obtained in respect to copper and/or lead doped antimonates are shown in table 15.
-
TABLE 15 optical properties of some copper and/or lead doped antimonates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength. Luminous density at 400 nm Peak wave Peak wave excitation length of length of Possible compared with lead/copper materials excitation copper/lead not dope without range doped compounds materials lead/copper Composition (nm) (%) (nm) (nm) Pb0.2Mg0.002Ca1.798Sb2O6F2:Mn 360-400 102 645 649 Cu0.15Ca1.845Sr0.005Sb1.998Si0.002O7:Mn 360-400 101.5 660 658 Cu0.2Mg1.7Li0.2Sb2O7:Mn 360-400 101.8 652 650 Cu0.2Pb0.01Ca0.79Sb1.98Nb0.02O6:Mn 360-400 98.5 658 658 Cu0.01Ca1.99Sb1.9995V0.0005O7:Mn 360-400 100.5 660 657 Pb0.006Ca0.6Sr0.394Sb2O6 360-400 102 637 638 Cu0.02Ca0.9Sr0.5Ba0.4Mg0.18Sb2O7 360-400 102.5 649 645 Pb0.198Mg0.004Ca1.798Sb2O6F2 360-400 101.8 628 630 - Lead and/or copper doped germanates and/or a germanate-silicates having formula (17)
-
a(M′O).b(M″2O).c(M″X).dGeO2 .e(M′″O).f(M″″2O3).g(M′″″oOp).h(M″″″xOy) (17) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, and/or any combination thereof; M″″ may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof; M′″″ may be Si, Ti, Zr, Mn, V, Nb, Ta, W, Mo, and/or any combination thereof; M″″″ may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦2; 0≦c≦10; 0<d≦10; 0≦e≦14; 0≦f≦14; 0≦g≦10; 0≦h≦2; 1≦o≦2; 1≦p≦5; 1≦x≦2; and 1≦y≦5.
- Example of Preparation:
- Preparation of the luminescent material having formula (18)
-
Pb0.004Ca1.99Zn0.006Ge0.8Si0.2O4:Mn (18) - Starting materials: PbO, CaCO3, ZnO, GeO2, SiO2, MnCO3, and/or any combination thereof,
- The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. In a first step the mixture may be fired in an alumina crucible at about 1,200° C. in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,200° C. in oxygen containing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 655 nm.
-
TABLE 16 lead doped Mn-activated germanate compared with Mn-activated germanate without lead at about 400 nm excitation wavelength Copper doped compound Comparison without copper Pb0.004Ca1.99Zn0.006Ge0.8Si0.2O4:Mn Ca1.99Zn0.01Ge0.8Si0.2O4:Mn Luminous density (%) 101.5 100 Wavelength (nm) 655 657 - Preparation of the luminescent material having formula (19)
-
Cu0.46Sr0.54Ge0.6Si0.4O3:Mn (19) - Starting materials: CuO, SrCO3, GeO2, SiO2, MnCO3, and/or any combination thereof.
- The starting materials in the form of oxides and/or carbonates may be mixed in stoichiometric proportions together with small amounts of flux, for example, NH4Cl. In a first step the mixture may be fired in an alumina crucible at about 1,100° C. in an oxygen-containing atmosphere for about 2 hours. Then, the material may be milled again. In a second step the mixture may be fired in an alumina crucible at about 1,180° C. in an oxygen-containing atmosphere for about 4 hours. After that the material may be milled, washed, dried and sieved. The resulting luminescent material may have an emission maximum at about 658 nm.
-
TABLE 17 copper doped Mn-activated germanate-silicate compared with Mn- activated germanate-silicate without copper at 400 nm excitation wavelength Compound Copper doped compound without copper Cu0.46Sr0.54Ge0.6Si0.4O3:Mn SrGe0.6Si0.4O3:Mn Luminous 103 100 density (%) Wavelength (nm) 658 655 -
TABLE 18 optical properties of some copper and/or lead doped germanate-silicates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength Luminous density at 400 nm Peak wave Peak wave excitation length of length of Possible compared with lead/copper materials excitation copper/lead not doped without range doped materials lead/copper Composition (nm) compounds (%) (nm) (nm) Pb0.004Ca1.99Zn0.006Ge0.8Si0.2O4:Mn 360-400 101.5 655 657 Pb0.002Sr0.954Ca1.044Ge0.93Si0.07O4:Mn 360-400 101.5 660 661 Cu0.46Sr0.54Ge0.6Si0.4O3:Mn 360-400 103 658 655 Cu0.002Sr0.998Ba0.99Ca0.01Si0.98Ge0.02O4:Eu 360-470 102 538 533 Cu1.45Mg26.55Ge9.4Si0.6O48:Mn 360-400 102 660 657 Cu1.2Mg26.8Ge8.9Si1.1O48:Mn 360-400 103.8 670 656 Cu4Mg20Zn4Ge5Si2.5O38F10:Mn 360-400 101.5 658 655 Pb0.001Ba0.849Zn0.05Sr1.1Ge0.04Si0.96O4:Eu 360-470 101.8 550 545 Cu0.05Mg4.95GeO6F2:Mn 360-400 100.5 655 653 Cu0.05Mg3.95GeO5.5F:Mn 360-400 100.8 657 653 - Lead and/or copper doped phosphates having formula (20)
-
a(M′O).b(M″2O).c(M″X).dP2O5 .e(M′″O).f(M″″2O3).g(M′″″O2).h(M″″″xOy) (20) - wherein M′ may be Pb, Cu, and/or any combination thereof; M″ may be Li, Na, K, Rb, Cs, Au, Ag, and/or any combination thereof; M′″ may be Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, and/or any combination thereof; M″″ may be Sc, Y, B, Al, La, Ga, In, and/or any combination thereof; M′″″ may be Si, Ge, Ti, Zr, Hf, V, Nb, Ta, W, Mo, and/or any combination thereof; M″″″ may be Bi, Sn, Pr, Sm, Eu, Gd, Dy, Ce, Tb, and/or any combination thereof; X may be F, Cl, Br, J, and/or any combination thereof; 0<a≦2; 0≦b≦12; 0≦c≦16; 0<d≦3; 0≦e≦5; 0≦f≦3; 0≦g≦2; 0<h≦2; 1≦x≦2; and 1≦y≦5.
- Examples of Preparation:
- Preparation of the luminescent material having formula (21)
-
Cu0.02Ca4.98(PO4)3Cl:Eu (21) - Starting materials: CuO, CaCO3, Ca3(PO4)2, CaCl2, Eu2O3, and/or any combination thereof.
- The starting materials in the form of oxides, phosphates, and/or carbonates and chlorides may be mixed in stoichiometric proportions together with small amounts of flux. The mixture may be fired in an alumina crucible at about 1,240° C. in reducing atmosphere for about 2 hours. After that the material may be milled, washed, dried and sieved. The luminescent material may have an emission maximum at about 450 nm.
-
TABLE 19 copper doped Eu2+-activated chlorophosphate compared with Eu2+- activated chlorophosphate without copper at about 400 nm excitation wavelength. Copper doped compound Compound without copper Cu0.02Ca4.98 (PO4)3Cl:Eu Ca5(PO4)3Cl:Eu Luminous 101.5 100 density (%) Wavelength (nm) 450 447 -
TABLE 20 copper and/or lead doped phosphates excitable by long wave ultraviolet and/or by visible light and their luminous density in % at about 400 nm excitation wavelength Luminous density at 400 nm Peak wave Peak wave excitation length of length of Possible compared with lead/copper materials excitation copper/lead not doped without range doped materials lead/copper Composition (nm) compounds (%) (nm) (nm) Cu0.02Sr4.98(PO4)3Cl:Eu 360-410 101.5 450 447 Cu0.2Mg0.8BaP2O7:Eu 360-400 102 638 635 Pb0.5Sr1.5P1.84B0.16O6.84:Eu 360-400 102 425 420 Cu0.5Mg0.5Ba2(P,Si)2O8:Eu 360-400 101 573 570 Cu0.5Sr9.5(P,B)6O24Cl2:Eu 360-410 102 460 456 Cu0.5Ba3Sr6.5P6O24(F,Cl)2:Eu 360-410 102 443 442 Cu0.05(Ca,Sr,Ba)4.95P3O12Cl:Eu, Mn 360-410 101.5 438, 641 435, 640 Pb0.1Ba2.9P2O8:Eu 360-400 103 421 419 - Meanwhile, the phosphor of the light emitting device consistent with this invention can comprise aluminate, silicate, antimonate, germanate, phosphate type chemical compound, and any combination thereof.
-
FIG. 6 is a one of the embodiment's emission spectrum according to the invention, which the phosphor is used for the light emitting device. The embodiment may have a light emitting diode with 405 nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio. The phosphor may be composed of Cu0.05BaMg1.95Al16O27:Eu which may have peak wavelength at about 451 nm, Cu0.03Sr1.5Ca0.47SiO4:Eu which may have peak wavelength at 586 nm, Pb0.006Ca0.6Sr0.394Sb2O6:Mn4+ which may have peak wavelength at about 637 nm, Pb0.15Ba1.84Zn0.01Si0.99Zr0.01O4:Eu is which may have peak wavelength at around 512 nm, and Cu0.2Sr3.8Al14O25:Eu which may have peak wavelength at about 494 nm. - In such an embodiment, part of the initial about 405 nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2nd wavelength. The 1st and 2nd light are mixed together and the desire emission is produced. As the shown
FIG. 6 , the light emitting device convert the 1st UV light of 405 nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 3,000K and CRI is about 90 to about 95. -
FIG. 7 is another embodiment's emission spectrum according to the invention, which the phosphor is applied for the light emitting device. The embodiment may have a light emitting diode with about 455 nm wavelength and the phosphor, which is mixture of the selected multiple chemical compounds in proper ratio. - The phosphor is composed of Cu0.05Sr1.7Ca0.25SiO4:Eu which may have peak wavelength at about 592 nm, Pb0.1Ba0.95Sr0.95Si0.998Ge0.002O4:Eu which may have peak wavelength at about 527 nm, and Cu0.05Li0.002Sr1.5Ba0.448SiO4:Gd, Eu which may have peak is wavelength at about 557 nm.
- In such an embodiment, part of the initial about 455 nm wavelength emission light from the light emitting diode is absorbed by the phosphor, and it is converted to longer 2nd wavelength. The 1st and 2nd light is mixed together and the desire emission is produced. As the shown
FIG. 7 , the light emitting device convert the 1st blue light of about 455 nm wavelength to wide spectral range of visible light, that is, white light, and at this time the color temperature is about 4,000K to about 6,500K and CRI is about 86 to about 93. - The phosphor of the light emitting device according to the invention can be applied by single chemical compound or mixture of plurality of single chemical compound besides the embodiments in relation to
FIG. 6 andFIG. 7 , which are explained above. - According to the description above, light emitting device with wide range of color temperature about 2,000K or about 8,000K or about 10,000K and superior color rendering index more than about 90 can be realized by using the lead and/or copper doped chemical compounds containing rare earth elements.
- In such a wavelength conversion light emitting device is capable of applying on mobile phone, note book and electronic devices such as home appliance, stereo, telecommunication products, but also for custom display's key pad and back light application. Moreover, it can be applied for automobile, medical instrument and illumination products.
- According to the invention, it is also able to provide a wavelength conversion light emitting device with stability against water, humidity, vapor as well as other polar solvents.
- In the foregoing described embodiments, various features are grouped together in a single embodiment for purposes of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed invention requires more features is than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the following claims are hereby incorporated into this Detailed Description of Embodiments, with each claim standing on its own as a separate preferred embodiment of the invention.
Claims (19)
1. A light emitting device, comprising:
a light emitting diode configured to emit light; and
a phosphor configured to change a wavelength of the light emitted from the light emitting diode, the phosphor covering at least a portion of the light emitting diode;
wherein said phosphor comprises a compound including a host material and an activator, and
wherein divalent copper ions and oxygen are components of the host material.
2. The light emitting device according to claim 1 , wherein the compound has the formula
a(M′O)b(M″2O)c(M″X)d(Al2O3)e(M′″O)f(M″″2O3)g(M′″″oOp)h(M″″″xOy)
a(M′O)b(M″2O)c(M″X)d(Al2O3)e(M′″O)f(M″″2O3)g(M′″″oOp)h(M″″″xOy)
wherein
M′ is Cu, or a combination of Cu and Pb;
M″ is Li, Na, K, Rb, Cs, Au, Ag or any combination thereof;
M′″ is Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn or any combination thereof;
M″′ is Sc, B, Ga, In, or any combination thereof;
M′″″ is Si, Ge, Ti, Zr, Mn, V, Nb, Ta, W, Mo, or any combination thereof;
M″″″ is Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or any combination thereof;
X is F, Cl, Br, I, or any combination thereof;
0<a≦2;
0≦b≦2;
0≦c≦2;
0<d≦8;
0<e≦4;
0≦f≦3;
0≦g≦8;
0<h≦2;
1<o<2;
1≦p≦5;
1≦x≦2; and
1≦y≦5.
3. The light emitting device according to claim 1 , wherein the compound has the formula
a(M′O)b(M″2O)c(M″X)4-a-b-c(M′″O)7(Al2O3)d(B2O3)e(Ga2O3)f(SiO2)g(GeO2)h(M″″xOy)
a(M′O)b(M″2O)c(M″X)4-a-b-c(M′″O)7(Al2O3)d(B2O3)e(Ga2O3)f(SiO2)g(GeO2)h(M″″xOy)
wherein
M′ is Cu, or a combination of Cu and Pb;
M″ is Li, Na, K, Rb, Cs, Au, Ag, or any combination thereof;
M′″ is Be, Mg, Ca, Sr, Ba, Zn, Cd, Mn, or any combination thereof;
M″″ is Bi, Sn, Sb, Sc, Y, La, In, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or any combination thereof;
X is F, Cl, Br, I, or any combination thereof;
0<a≦4;
0<b≦2;
0≦c≦2;
0≦d≦1;
0≦e≦1;
0≦f≦1;
0≦g≦1;
0<h≦2;
1≦x≦2; and
1≦y≦5.
4. The light emitting device according to claim 1 , wherein the phosphor includes one or more single compounds or any combination thereof.
5. The light emitting device according to claim 1 , further comprising a sealing material configured to cover the light emitting diode and the phosphor.
6. The light emitting device according to claim 5 , wherein the phosphor is distributed in the sealing material.
7. The light emitting device according to claim 1 , wherein the phosphor is mixed with a hardening material.
8. The light emitting device according to claim 1 , wherein the light emitting diode comprises a plurality of light emitting diodes.
9. The light emitting device according to claim 1 , wherein the phosphor comprises an aluminate containing copper, a silicate containing copper, an antimonite containing copper, a germanate containing copper, a germanate-silicate containing copper, a phosphate containing copper, or any combination thereof.
10. The light emitting device according to claim 1 , further comprising:
a substrate;
a plurality of electrodes provided on the substrate; and
an electrically conductive device configured to connect the light emitting diode with one of the plurality of electrodes,
wherein the light emitting diode is provided on another of the plurality of electrodes.
11. The light emitting device according to claim 10 , further comprising electrically conductive paste provided between the light emitting diode and one of the plurality of electrodes.
12. The light emitting device according to claim 10 , further comprising a reflector configured to reflect the light from the light emitting diode.
13. The light emitting device according to claim 1 , further comprising:
a plurality of leads;
a diode holder provided at the end of one of the plurality of leads; and
an electrically conductive device configured to connect the light emitting diode with another of the plurality of leads,
wherein the light emitting diode is provided in the diode holder and includes a plurality of electrodes.
14. The light emitting device according to claim 13 , further comprising electrically conductive paste provided between the light emitting diode and one of the plurality of electrodes.
15. The light emitting device according to claim 1 , further comprising:
a housing;
a heat sink at least partially provided in the housing;
a plurality of lead frames provided on or around the heat sink; and
an electrically conductive device configured to connect the light emitting diode with one of the plurality of lead frames,
wherein the light emitting diode is disposed over the heat sink.
16. The light emitting device according to claim 15 , further comprising electrically conductive paste provided between the light emitting diode and the heat sink.
17. The light emitting device according to claim 15 , wherein at least one of the plurality of lead frames protrudes from the housing.
18. The light emitting device according to claim 15 , wherein the heat sink comprises a plurality of heat sinks.
19. The light emitting device according to claim 1 , lead is a component of the host material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/854,001 US20100301371A1 (en) | 2004-06-10 | 2010-08-10 | Light emitting device |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040042396A KR100665298B1 (en) | 2004-06-10 | 2004-06-10 | Light emitting device |
KR2004-042396 | 2004-06-10 | ||
US11/024,702 US7554129B2 (en) | 2004-06-10 | 2004-12-30 | Light emitting device |
US12/098,263 US8089084B2 (en) | 2004-06-10 | 2008-04-04 | Light emitting device |
US12/854,001 US20100301371A1 (en) | 2004-06-10 | 2010-08-10 | Light emitting device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/098,263 Continuation US8089084B2 (en) | 2004-06-10 | 2008-04-04 | Light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100301371A1 true US20100301371A1 (en) | 2010-12-02 |
Family
ID=34930126
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/024,702 Active US7554129B2 (en) | 2004-06-10 | 2004-12-30 | Light emitting device |
US11/948,845 Expired - Fee Related US8066909B2 (en) | 2004-06-10 | 2007-11-30 | Light emitting device |
US12/098,263 Expired - Fee Related US8089084B2 (en) | 2004-06-10 | 2008-04-04 | Light emitting device |
US12/854,001 Abandoned US20100301371A1 (en) | 2004-06-10 | 2010-08-10 | Light emitting device |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/024,702 Active US7554129B2 (en) | 2004-06-10 | 2004-12-30 | Light emitting device |
US11/948,845 Expired - Fee Related US8066909B2 (en) | 2004-06-10 | 2007-11-30 | Light emitting device |
US12/098,263 Expired - Fee Related US8089084B2 (en) | 2004-06-10 | 2008-04-04 | Light emitting device |
Country Status (11)
Country | Link |
---|---|
US (4) | US7554129B2 (en) |
EP (3) | EP2025734B1 (en) |
JP (1) | JP4159542B2 (en) |
KR (1) | KR100665298B1 (en) |
CN (2) | CN100442553C (en) |
AT (1) | ATE478126T1 (en) |
DE (2) | DE602004028710D1 (en) |
ES (2) | ES2350830T3 (en) |
MX (1) | MX2007007648A (en) |
PT (1) | PT1605030E (en) |
TW (2) | TWI328885B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090146157A1 (en) * | 2007-12-10 | 2009-06-11 | Everlight Electronics Co., Ltd. | Light-emitting diode package |
US20100163919A1 (en) * | 2008-12-25 | 2010-07-01 | Hitoshi Kamamori | Lighting device |
US11292964B2 (en) | 2016-03-14 | 2022-04-05 | Mitsui Mining & Smelting Co., Ltd. | Phosphor |
US11856858B2 (en) | 2017-10-16 | 2023-12-26 | Akoustis, Inc. | Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films |
US12102010B2 (en) | 2021-03-05 | 2024-09-24 | Akoustis, Inc. | Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices |
Families Citing this family (101)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004074556A2 (en) | 2003-02-24 | 2004-09-02 | Waseda University | β-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD |
US7521667B2 (en) | 2003-06-23 | 2009-04-21 | Advanced Optical Technologies, Llc | Intelligent solid state lighting |
US7145125B2 (en) | 2003-06-23 | 2006-12-05 | Advanced Optical Technologies, Llc | Integrating chamber cone light using LED sources |
JP3931239B2 (en) * | 2004-02-18 | 2007-06-13 | 独立行政法人物質・材料研究機構 | Light emitting device and lighting apparatus |
KR100655894B1 (en) | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Light Emitting Device |
KR100658700B1 (en) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Light emitting device with RGB diodes and phosphor converter |
US8318044B2 (en) | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
KR100665299B1 (en) | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Luminescent material |
KR100665298B1 (en) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Light emitting device |
US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
KR100724591B1 (en) | 2005-09-30 | 2007-06-04 | 서울반도체 주식회사 | Light emitting device and LCD backlight using the same |
KR101258397B1 (en) * | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | Copper-Alkaline-Earth-Silicate mixed crystal phosphors |
US7926300B2 (en) | 2005-11-18 | 2011-04-19 | Cree, Inc. | Adaptive adjustment of light output of solid state lighting panels |
US8514210B2 (en) | 2005-11-18 | 2013-08-20 | Cree, Inc. | Systems and methods for calibrating solid state lighting panels using combined light output measurements |
EP1949765B1 (en) * | 2005-11-18 | 2017-07-12 | Cree, Inc. | Solid state lighting panels with variable voltage boost current sources |
KR101055772B1 (en) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | Light emitting device |
EP1963740A4 (en) | 2005-12-21 | 2009-04-29 | Cree Led Lighting Solutions | Lighting device and lighting method |
JP5614766B2 (en) * | 2005-12-21 | 2014-10-29 | クリー インコーポレイテッドCree Inc. | Lighting device |
JP2009527071A (en) | 2005-12-22 | 2009-07-23 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Lighting device |
RU2315135C2 (en) | 2006-02-06 | 2008-01-20 | Владимир Семенович Абрамов | Method of growing nonpolar epitaxial heterostructures based on group iii element nitrides |
US8323529B2 (en) | 2006-03-16 | 2012-12-04 | Seoul Semiconductor Co., Ltd. | Fluorescent material and light emitting diode using the same |
KR100875443B1 (en) * | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | Light emitting device |
KR101274044B1 (en) * | 2006-03-31 | 2013-06-12 | 서울반도체 주식회사 | Light emitting device and LCD backlight using the same |
US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
BRPI0711255A2 (en) | 2006-04-18 | 2011-08-30 | Cree Led Lighting Solutions | lighting device and lighting method |
WO2007124036A2 (en) | 2006-04-20 | 2007-11-01 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
US7777166B2 (en) | 2006-04-21 | 2010-08-17 | Cree, Inc. | Solid state luminaires for general illumination including closed loop feedback control |
US7648257B2 (en) | 2006-04-21 | 2010-01-19 | Cree, Inc. | Light emitting diode packages |
US7625103B2 (en) | 2006-04-21 | 2009-12-01 | Cree, Inc. | Multiple thermal path packaging for solid state light emitting apparatus and associated assembling methods |
US7722220B2 (en) | 2006-05-05 | 2010-05-25 | Cree Led Lighting Solutions, Inc. | Lighting device |
KR101263934B1 (en) * | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | Light emitting diode and method of manufacturing thesame |
JP2009538536A (en) | 2006-05-26 | 2009-11-05 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Solid state light emitting device and method of manufacturing the same |
WO2007142946A2 (en) | 2006-05-31 | 2007-12-13 | Cree Led Lighting Solutions, Inc. | Lighting device and method of lighting |
US7969097B2 (en) * | 2006-05-31 | 2011-06-28 | Cree, Inc. | Lighting device with color control, and method of lighting |
KR101258229B1 (en) * | 2006-06-30 | 2013-04-25 | 서울반도체 주식회사 | Light emitting device |
JP5205724B2 (en) * | 2006-08-04 | 2013-06-05 | 日亜化学工業株式会社 | Light emitting device |
KR101258227B1 (en) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | Light emitting device |
US7766508B2 (en) * | 2006-09-12 | 2010-08-03 | Cree, Inc. | LED lighting fixture |
US7665862B2 (en) | 2006-09-12 | 2010-02-23 | Cree, Inc. | LED lighting fixture |
JP3964449B1 (en) * | 2006-10-06 | 2007-08-22 | 根本特殊化学株式会社 | Orange phosphor |
US8029155B2 (en) | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
JP2008140704A (en) * | 2006-12-04 | 2008-06-19 | Stanley Electric Co Ltd | Led backlight |
EP2089654B1 (en) | 2006-12-07 | 2016-08-03 | Cree, Inc. | Lighting device and lighting method |
CN100503776C (en) * | 2006-12-19 | 2009-06-24 | 上海师范大学 | A method for preparing CaSiO3: pb, mn nanophase red fluorescent material |
JP2008166782A (en) | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | Light-emitting element |
WO2008082136A1 (en) * | 2006-12-28 | 2008-07-10 | Seoul Semiconductor Co., Ltd. | Back lighting unit having phosphor film structure |
KR101423456B1 (en) | 2006-12-28 | 2014-07-29 | 서울반도체 주식회사 | Back lighting unit having phosphor film structure |
US8258682B2 (en) * | 2007-02-12 | 2012-09-04 | Cree, Inc. | High thermal conductivity packaging for solid state light emitting apparatus and associated assembling methods |
CN101657671B (en) | 2007-02-22 | 2012-07-11 | 科锐公司 | Lighting devices, methods of lighting, light filters and methods of filtering light |
KR101396588B1 (en) * | 2007-03-19 | 2014-05-20 | 서울반도체 주식회사 | Light emitting apparatus having various color temperature |
US7824070B2 (en) | 2007-03-22 | 2010-11-02 | Cree, Inc. | LED lighting fixture |
TW200912202A (en) | 2007-05-08 | 2009-03-16 | Cree Led Lighting Solutions | Lighting device and lighting method |
US7744243B2 (en) | 2007-05-08 | 2010-06-29 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
EP2142844B1 (en) | 2007-05-08 | 2017-08-23 | Cree, Inc. | Lighting device and lighting method |
CN101688644B (en) | 2007-05-08 | 2011-06-15 | 科锐Led照明科技公司 | Lighting device and lighting method |
EP2153112B1 (en) | 2007-05-08 | 2016-05-04 | Cree, Inc. | Lighting device and lighting method |
US8042971B2 (en) * | 2007-06-27 | 2011-10-25 | Cree, Inc. | Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods |
US20090002979A1 (en) * | 2007-06-27 | 2009-01-01 | Cree, Inc. | Light emitting device (led) lighting systems for emitting light in multiple directions and related methods |
EP2171502B1 (en) | 2007-07-17 | 2016-09-14 | Cree, Inc. | Optical elements with internal optical features and methods of fabricating same |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
WO2009025469A2 (en) | 2007-08-22 | 2009-02-26 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
KR101055769B1 (en) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor |
BRPI0818048B1 (en) | 2007-10-10 | 2018-11-21 | Cree Led Lighting Solutions Inc | lighting device |
CN100546058C (en) * | 2007-10-15 | 2009-09-30 | 佛山市国星光电股份有限公司 | Power luminous diode packaging structure |
US8866410B2 (en) | 2007-11-28 | 2014-10-21 | Cree, Inc. | Solid state lighting devices and methods of manufacturing the same |
US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
TW201019006A (en) * | 2008-11-06 | 2010-05-16 | Chunghwa Picture Tubes Ltd | LED light module |
TWI376043B (en) * | 2009-01-23 | 2012-11-01 | Everlight Electronics Co Ltd | Light emitting device package structure and manufacturing method thereof |
US8610156B2 (en) | 2009-03-10 | 2013-12-17 | Lg Innotek Co., Ltd. | Light emitting device package |
KR101047603B1 (en) * | 2009-03-10 | 2011-07-07 | 엘지이노텍 주식회사 | Light emitting device package and its manufacturing method |
KR101092063B1 (en) * | 2009-04-28 | 2011-12-12 | 엘지이노텍 주식회사 | Light emitting device package and method for fabricating the same |
WO2010130075A1 (en) * | 2009-05-11 | 2010-11-18 | 海洋王照明科技股份有限公司 | Full-color light-emitting material and preparation method thereof |
US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
DE102009030205A1 (en) | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate |
KR101055762B1 (en) | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device employing a light-emitting material having an oxyosilicate light emitter |
US8894882B2 (en) | 2009-09-21 | 2014-11-25 | University Of Georgia Research Foundation, Inc. | Near infrared doped phosphors having an alkaline gallate matrix |
US8877096B2 (en) | 2009-09-21 | 2014-11-04 | University Of Georgia Research Foundation, Inc. | Near infrared doped phosphors having a zinc, germanium, gallate matrix |
CN102630288B (en) | 2009-09-25 | 2015-09-09 | 科锐公司 | There is the lighting apparatus of low dazzle and high brightness levels uniformity |
EP2516584B1 (en) | 2009-12-21 | 2018-03-07 | Seoul Semiconductor Co., Ltd. | Light emitting device having strontium/barium oxyorthosilicate type phosphors |
DE102009059798A1 (en) * | 2009-12-21 | 2011-06-22 | LITEC-LP GmbH, 17489 | An agent for improving the stability against the occurring radiation exposure and resistance to the influence of atmospheric moisture in strontium oxyorthosilicate phosphors |
US8338317B2 (en) | 2011-04-06 | 2012-12-25 | Infineon Technologies Ag | Method for processing a semiconductor wafer or die, and particle deposition device |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
RU2525166C2 (en) * | 2010-03-16 | 2014-08-10 | Общество с ограниченной ответственностью "ДиС ПЛЮС" | Method to control chromaticity of light flux of white light diode and device for method realisation |
US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
TWI418742B (en) * | 2011-06-30 | 2013-12-11 | Lextar Electronics Corp | Optical brightening led package |
JP2014532103A (en) * | 2011-09-28 | 2014-12-04 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンHenkel AG & Co.KGaA | Oxetane-containing compound and composition thereof |
CN102560659B (en) * | 2012-03-21 | 2015-01-07 | 新疆紫晶光电技术有限公司 | Nonlinear optical crystal and preparation method and application thereof |
US9856419B2 (en) | 2012-08-08 | 2018-01-02 | University Of South Carolina | Stable phosphors for lighting applications |
WO2014067111A1 (en) * | 2012-10-31 | 2014-05-08 | 海洋王照明科技股份有限公司 | Germanate luminescent material and preparation method therefor |
CN104241262B (en) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | Light emitting device and display device |
WO2015072766A1 (en) * | 2013-11-13 | 2015-05-21 | 엘지이노텍(주) | Blue-green phosphor, and light-emitting device package and lighting apparatus comprising same |
US9376617B2 (en) * | 2014-10-23 | 2016-06-28 | Panasonic Intellectual Property Management Co., Ltd. | Fluorescent material and light-emitting device |
US20200093238A1 (en) * | 2016-06-16 | 2020-03-26 | Harsh Kumar | Mobile phone case having mirrored surface and lighting |
CN110402494A (en) * | 2017-01-13 | 2019-11-01 | 尤哈·兰塔拉 | LED structure and luminaire for continuous disinfection |
CN110444644B (en) * | 2019-07-26 | 2022-10-14 | 浙江大学 | Device for enhancing silicon-based erbium-doped ZnO thin film electroluminescence and preparation method thereof |
KR102205984B1 (en) * | 2019-12-03 | 2021-01-21 | 에스지에너지주식회사 | Method for manufacturing color photovoltaic module with self-cleaning properties |
CN116925760A (en) * | 2023-07-12 | 2023-10-24 | 安徽三联学院 | Mn (Mn) 4+ Activated antimonate red fluorescent material and preparation method thereof |
Citations (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2110162A (en) * | 1938-03-08 | Luminescent material | ||
US2402760A (en) * | 1942-06-27 | 1946-06-25 | Rca Corp | Luminescent material |
US2570136A (en) * | 1949-12-22 | 1951-10-02 | Du Pont | Infrared phosphors |
US3598752A (en) * | 1967-04-14 | 1971-08-10 | Itt | Ultraviolet emitting cathodoluminescent material |
US4110660A (en) * | 1975-03-19 | 1978-08-29 | Gte Sylvania Incorporated | Luminescent barium-lithium aluminate phosphors and lamp containing the same |
US4215289A (en) * | 1978-03-10 | 1980-07-29 | U.S. Philips Corporation | Luminescent material, luminescent screen provided with such a material and low-pressure mercury vapor discharge lamp provided with such a screen |
US4810416A (en) * | 1979-08-03 | 1989-03-07 | Kasei Optonix, Ltd. | Borate phosphor |
US5060118A (en) * | 1989-04-06 | 1991-10-22 | Frank A. Arone | Apparatus for daylight color duplication |
US5188763A (en) * | 1986-08-29 | 1993-02-23 | Gte Products Corporation | Method for preparing zinc orthosilicate phosphor |
US5433295A (en) * | 1993-02-04 | 1995-07-18 | Inventio Ag | Indicating element for elevators |
US5472636A (en) * | 1994-09-14 | 1995-12-05 | Osram Sylvania Inc. | Method of preparing manganese and lead coactivated calcium silicate phosphor |
US5853614A (en) * | 1996-12-17 | 1998-12-29 | Beijing Hongye Coating Materials Company | Long decay luminescent material |
US6084250A (en) * | 1997-03-03 | 2000-07-04 | U.S. Philips Corporation | White light emitting diode |
US20030030063A1 (en) * | 2001-07-27 | 2003-02-13 | Krzysztof Sosniak | Mixed color leds for auto vanity mirrors and other applications where color differentiation is critical |
WO2003080764A1 (en) * | 2002-03-22 | 2003-10-02 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
US20040079957A1 (en) * | 2002-09-04 | 2004-04-29 | Andrews Peter Scott | Power surface mount light emitting die package |
US20040136891A1 (en) * | 2000-10-17 | 2004-07-15 | Takeshi Kijima | Oxide material, method for preparing oxide thin film and element using said material |
US20050001225A1 (en) * | 2002-11-29 | 2005-01-06 | Toyoda Gosei Co., Ltd. | Light emitting apparatus and light emitting method |
US20050141048A1 (en) * | 2002-03-19 | 2005-06-30 | Casio Computer Co., Ltd | Image reading apparatus and drive control method therefor |
US20050264161A1 (en) * | 2004-05-27 | 2005-12-01 | Hitoshi Oaku | Light emitting device |
US20060158090A1 (en) * | 2005-01-14 | 2006-07-20 | Intematix Corporation | Novel aluminate-based green phosphors |
US7138770B2 (en) * | 2004-12-27 | 2006-11-21 | Top Union Globaltek Inc. | LED driving circuit |
US7204607B2 (en) * | 2003-09-16 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | LED lamp |
US7206507B2 (en) * | 2003-12-19 | 2007-04-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Method and apparatus for producing untainted white light using off-white emitting diodes |
US20070247051A1 (en) * | 2004-09-07 | 2007-10-25 | Sumitomo Chemical Company, Limited | Phosphor, Phosphor Paste and Light-Emitting Device |
US20080036364A1 (en) * | 2006-08-10 | 2008-02-14 | Intematix Corporation | Two-phase yellow phosphor with self-adjusting emission wavelength |
US7332746B1 (en) * | 1999-09-02 | 2008-02-19 | Toyoda Gosei, Co., Ltd. | Light-emitting apparatus |
US20090050847A1 (en) * | 2005-04-08 | 2009-02-26 | National Institute Of Advanced Industrial Science And Technology | Stress-Stimulated Luminescent Material, Manufacturing Method Thereof, Composite Material Including the Stress-Stimulated Luminescent Material, and Base Material Structure of the Stress-Stimulated Luminescent Material |
US7554129B2 (en) * | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US7608200B2 (en) * | 2004-01-16 | 2009-10-27 | Mitsubishi Chemical Corporation | Phosphor and including the same, light emitting apparatus, illuminating apparatus and image display |
US7679101B2 (en) * | 2000-12-28 | 2010-03-16 | Toyoda Gosei Co., Ltd. | Light emitting device |
US7679281B2 (en) * | 2007-03-19 | 2010-03-16 | Seoul Semiconductor Co., Ltd. | Light emitting device having various color temperature |
US20100207132A1 (en) * | 2007-08-28 | 2010-08-19 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
US8070983B2 (en) * | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
Family Cites Families (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2617773A (en) * | 1948-09-10 | 1952-11-11 | Westinghouse Electric Corp | Lead activated calcium tungstate phosphor |
US2719128A (en) * | 1950-06-21 | 1955-09-27 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Luminescent material |
US2780600A (en) * | 1955-01-24 | 1957-02-05 | Westinghouse Electric Corp | Lead-and manganese-activated cadmium-sodium fluorophosphate phosphor |
US3143510A (en) * | 1959-06-12 | 1964-08-04 | Philips Corp | Copper and tin activated orthophosphate phosphors |
NL7013516A (en) * | 1970-09-12 | 1972-03-14 | ||
US3644212A (en) * | 1971-02-18 | 1972-02-22 | Westinghouse Electric Corp | Zinc-magnesium silico-germanate phosphor composition and method of preparing same |
JPS476258U (en) | 1971-02-18 | 1972-09-21 | ||
JPS4938994A (en) | 1972-08-19 | 1974-04-11 | ||
US3893939A (en) * | 1973-01-04 | 1975-07-08 | Us Energy | Activated phosphors having matrices of yttrium-transition metal compound |
US3905911A (en) | 1974-09-25 | 1975-09-16 | Gte Sylvania Inc | Copper activated hafnium phosphate phosphors and method of making |
JPS55135190A (en) * | 1979-04-06 | 1980-10-21 | Dainippon Toryo Co Ltd | Fluorescent substance and its manufacture |
NL8006223A (en) | 1980-11-14 | 1982-06-01 | Philips Nv | LUMINESCENT SCREEN AND LOW-PRESSURE MERCURY DISCHARGE LAMP FITTED WITH SUCH A SCREEN. |
NL8201943A (en) | 1982-05-12 | 1983-12-01 | Philips Nv | LUMINESCENT SCREEN. |
JPS61258892A (en) * | 1985-05-13 | 1986-11-17 | Matsushita Electronics Corp | Fluorescent lamp |
JPS62197487A (en) | 1986-02-25 | 1987-09-01 | Hitachi Ltd | Production of phosphor |
JPS62218476A (en) * | 1986-03-18 | 1987-09-25 | Murata Mfg Co Ltd | Thin-film el element |
JPH07110941B2 (en) | 1987-10-19 | 1995-11-29 | 化成オプトニクス株式会社 | Luminescent composition |
US4972086A (en) * | 1989-02-03 | 1990-11-20 | Eastman Kodak Company | X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing erbium to reduce afterglow |
EP0382295B1 (en) | 1989-02-07 | 1993-08-04 | Agfa-Gevaert N.V. | Reproduction of x-ray images with photostimulable phosphor |
JPH0578659A (en) * | 1991-09-18 | 1993-03-30 | Toshiba Corp | Fluorescent substance and fluorescent lamp |
US5518808A (en) * | 1992-12-18 | 1996-05-21 | E. I. Du Pont De Nemours And Company | Luminescent materials prepared by coating luminescent compositions onto substrate particles |
TW353678B (en) | 1994-08-17 | 1999-03-01 | Mitsubishi Chem Corp | Aluminate phosphor |
ES2169796T3 (en) * | 1995-04-14 | 2002-07-16 | Tokyo Kagaku Kenkyusho Kk | COMPOSITION OF PERSISTENT PHOSPHORESCENCE. |
JPH0940946A (en) | 1995-07-28 | 1997-02-10 | Tokyo Kagaku Kenkyusho:Kk | Molded phosphor having afterglow characteristics |
DE19539315A1 (en) * | 1995-10-23 | 1997-04-24 | Hoechst Ag | UV-active regenerated cellulose fibers |
JPH09153644A (en) | 1995-11-30 | 1997-06-10 | Toyoda Gosei Co Ltd | Group-iii nitride semiconductor display device |
KR200150839Y1 (en) | 1995-12-11 | 1999-07-15 | 정몽규 | Mounting structure of side glass for a bus |
DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US5965192A (en) * | 1996-09-03 | 1999-10-12 | Advanced Vision Technologies, Inc. | Processes for oxide based phosphors |
EP0835920B1 (en) * | 1996-10-10 | 2003-04-09 | Agfa-Gevaert | A new photostimulable phosphor |
JP2992254B2 (en) | 1997-08-11 | 1999-12-20 | 北京市豊台区宏業塗装輔料廠 | Method for producing high-speed excitation / high-brightness / low-attenuation luminescent material |
CN1085719C (en) | 1997-11-21 | 2002-05-29 | 中国科学院长春应用化学研究所 | Preparation of fluorescent powder for dysprosium and lead dosed high voltage mercury lamp |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
US6278832B1 (en) | 1998-01-12 | 2001-08-21 | Tasr Limited | Scintillating substance and scintillating wave-guide element |
US6855515B1 (en) * | 1998-04-22 | 2005-02-15 | Merck & Co., Inc. | Autoantigenic fragments, methods and assays |
JP2907286B1 (en) | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | Resin-sealed semiconductor light emitting device having fluorescent cover |
JP4366016B2 (en) | 1998-09-28 | 2009-11-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Lighting device |
KR100355456B1 (en) * | 1999-07-30 | 2002-10-11 | 한국전자통신연구원 | A red phosphor for fluorescent display and a preparation method thereof |
US6686691B1 (en) * | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
TWI272299B (en) * | 1999-10-06 | 2007-02-01 | Sumitomo Chemical Co | A process for producing aluminate-based phosphor |
JP2001115157A (en) | 1999-10-15 | 2001-04-24 | Nippon Sheet Glass Co Ltd | Phosphor and its production method |
US6513949B1 (en) | 1999-12-02 | 2003-02-04 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
JP3809760B2 (en) | 2000-02-18 | 2006-08-16 | 日亜化学工業株式会社 | Light emitting diode |
GB0012377D0 (en) * | 2000-05-22 | 2000-07-12 | Isis Innovation | Oxide based phosphors |
JP2002057376A (en) | 2000-05-31 | 2002-02-22 | Matsushita Electric Ind Co Ltd | Led lamp |
CN100567447C (en) | 2000-06-27 | 2009-12-09 | 住友化学工业株式会社 | The method for making of aluminate fluorescent substance, fluorescent substance and contain the device of fluorescent substance |
US6737801B2 (en) * | 2000-06-28 | 2004-05-18 | The Fox Group, Inc. | Integrated color LED chip |
JP4432275B2 (en) | 2000-07-13 | 2010-03-17 | パナソニック電工株式会社 | Light source device |
DE10036940A1 (en) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Luminescence conversion LED |
TW459403B (en) | 2000-07-28 | 2001-10-11 | Lee Jeong Hoon | White light-emitting diode |
JP4396016B2 (en) | 2000-09-21 | 2010-01-13 | 三菱化学株式会社 | Aluminate phosphor, phosphor paste composition, and vacuum ultraviolet light-excited light emitting device |
JP2002173677A (en) | 2000-12-04 | 2002-06-21 | Tokin Corp | Vacuum ultraviolet light-excited phosphor and phosphor paste using the same |
KR100392363B1 (en) | 2000-12-26 | 2003-07-22 | 한국전자통신연구원 | Phosphor and method for fabricating the same |
CN1187428C (en) | 2001-02-12 | 2005-02-02 | 湖南师范大学 | Single-base dual-energy light-transforming agent and its preparing prcess and application |
JP2002254273A (en) * | 2001-02-23 | 2002-09-10 | Mori Seiki Co Ltd | Control device for cutting tool, cutting tool and its cutting method |
JP3783572B2 (en) | 2001-03-05 | 2006-06-07 | 日亜化学工業株式会社 | Light emitting device |
JP4101468B2 (en) * | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | Method for manufacturing light emitting device |
JP3891115B2 (en) * | 2001-04-17 | 2007-03-14 | 日亜化学工業株式会社 | Light emitting device |
KR100419611B1 (en) * | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor |
JP4055373B2 (en) | 2001-05-31 | 2008-03-05 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
JP2002368277A (en) | 2001-06-05 | 2002-12-20 | Rohm Co Ltd | Chip semiconductor light-emitting device |
KR200253975Y1 (en) | 2001-08-18 | 2001-11-23 | 허성유 | Insect observe box |
US6737681B2 (en) | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
JP4032682B2 (en) | 2001-08-28 | 2008-01-16 | 三菱化学株式会社 | Phosphor |
US7189340B2 (en) * | 2004-02-12 | 2007-03-13 | Mitsubishi Chemical Corporation | Phosphor, light emitting device using phosphor, and display and lighting system using light emitting device |
CN100423296C (en) * | 2001-09-03 | 2008-10-01 | 松下电器产业株式会社 | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
US6770398B1 (en) * | 2001-09-11 | 2004-08-03 | The United States Of America As Represented By The Secretary Of The Army | Potassium stabilized manganese dioxide for lithium rechargeable batteries |
WO2003034508A1 (en) | 2001-10-12 | 2003-04-24 | Nichia Corporation | Light emitting device and method for manufacture thereof |
CN1152114C (en) | 2001-10-26 | 2004-06-02 | 中国科学院长春应用化学研究所 | Prepn of bluish voilet or green Si-Al-Zn system long-perisistance luminescent material |
JP2003152229A (en) | 2001-11-16 | 2003-05-23 | Rohm Co Ltd | Semiconductor light emitting device |
JP4092911B2 (en) | 2001-12-21 | 2008-05-28 | 松下電器産業株式会社 | Method for manufacturing plasma display device |
CN1266776C (en) | 2002-01-21 | 2006-07-26 | 诠兴开发科技股份有限公司 | Method for making white colore LED |
JP2003321675A (en) * | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | Nitride fluorophor and method for producing the same |
JP4868685B2 (en) | 2002-06-07 | 2012-02-01 | 日亜化学工業株式会社 | Phosphor |
JP4280038B2 (en) | 2002-08-05 | 2009-06-17 | 日亜化学工業株式会社 | Light emitting device |
JP2003306674A (en) * | 2002-04-15 | 2003-10-31 | Sumitomo Chem Co Ltd | Fluorescent material for white led, and white led using the same |
DE10233050B4 (en) | 2002-07-19 | 2012-06-14 | Osram Opto Semiconductors Gmbh | LED-based light source for generating light using the color mixing principle |
US7224000B2 (en) * | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
JP4263453B2 (en) | 2002-09-25 | 2009-05-13 | パナソニック株式会社 | Inorganic oxide and light emitting device using the same |
JP2004127988A (en) | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | White light emitting device |
JP2004134699A (en) | 2002-10-15 | 2004-04-30 | Toyoda Gosei Co Ltd | Light emitting device |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
JP3929885B2 (en) | 2002-12-06 | 2007-06-13 | シーケーディ株式会社 | LED lighting apparatus, LED lighting apparatus manufacturing apparatus, and LED lighting apparatus manufacturing method |
DE10259946A1 (en) | 2002-12-20 | 2004-07-15 | Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. | Phosphors for converting the ultraviolet or blue emission of a light-emitting element into visible white radiation with very high color rendering |
CN2624578Y (en) | 2003-01-21 | 2004-07-07 | 夏志清 | AC-DC dual-purpose LED lamp |
KR100499079B1 (en) * | 2003-02-10 | 2005-07-01 | 엘지전자 주식회사 | Oxide green fluorescent material |
JP4387119B2 (en) * | 2003-03-27 | 2009-12-16 | 三菱電機株式会社 | Semiconductor device |
US7320531B2 (en) | 2003-03-28 | 2008-01-22 | Philips Lumileds Lighting Company, Llc | Multi-colored LED array with improved brightness profile and color uniformity |
WO2004085570A1 (en) | 2003-03-28 | 2004-10-07 | Korea Research Institute Of Chemical Technology | Strontium silicate-based phosphor, fabrication method thereof, and led using the phosphor |
US20040206970A1 (en) | 2003-04-16 | 2004-10-21 | Martin Paul S. | Alternating current light emitting device |
TW200501456A (en) | 2003-04-23 | 2005-01-01 | Hoya Corp | Light-emitting diode |
US6982045B2 (en) | 2003-05-17 | 2006-01-03 | Phosphortech Corporation | Light emitting device having silicate fluorescent phosphor |
AU2003902422A0 (en) * | 2003-05-19 | 2003-06-05 | Intellirad Solutions Pty. Ltd | Access security system |
EP1647170B1 (en) * | 2003-07-08 | 2007-03-28 | Viasystems Group, Inc. | Method for manufacturing a midplane |
US6987353B2 (en) * | 2003-08-02 | 2006-01-17 | Phosphortech Corporation | Light emitting device having sulfoselenide fluorescent phosphor |
US7026755B2 (en) | 2003-08-07 | 2006-04-11 | General Electric Company | Deep red phosphor for general illumination applications |
CN100395897C (en) | 2003-08-08 | 2008-06-18 | 厦门三安电子有限公司 | Nitride device upside down mounting method |
TWI263356B (en) * | 2003-11-27 | 2006-10-01 | Kuen-Juei Li | Light-emitting device |
KR100586944B1 (en) * | 2003-12-26 | 2006-06-07 | 삼성전기주식회사 | High power light emitting diode package and method of producing the same |
CN2690724Y (en) | 2004-03-05 | 2005-04-06 | 深圳市蓝科电子有限公司 | High brightness luminous diode lighting device |
KR100605211B1 (en) * | 2004-04-07 | 2006-07-31 | 엘지이노텍 주식회사 | Phosphor and white led using the same |
KR100655894B1 (en) | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Light Emitting Device |
KR100658700B1 (en) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Light emitting device with RGB diodes and phosphor converter |
CN100397544C (en) | 2004-05-27 | 2008-06-25 | 株式会社日立制作所 | Light emitting device and image display device used said |
US8318044B2 (en) | 2004-06-10 | 2012-11-27 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US7601276B2 (en) | 2004-08-04 | 2009-10-13 | Intematix Corporation | Two-phase silicate-based yellow phosphor |
JP5081370B2 (en) | 2004-08-31 | 2012-11-28 | 日亜化学工業株式会社 | Light emitting device |
JP4880892B2 (en) | 2004-10-18 | 2012-02-22 | 株式会社東芝 | Phosphor, phosphor manufacturing method, and light emitting device using the same |
JP4836429B2 (en) * | 2004-10-18 | 2011-12-14 | 株式会社東芝 | Phosphor and light emitting device using the same |
JP2006173433A (en) | 2004-12-17 | 2006-06-29 | Ube Ind Ltd | Light transforming ceramic compound, and light emitting device using the same |
AU2005319965B2 (en) | 2004-12-22 | 2011-02-10 | Seoul Semiconductor Co., Ltd. | Light emitting device |
KR200382395Y1 (en) | 2005-01-20 | 2005-04-20 | 한일이화주식회사 | Partition device in door porket of car |
DE102005005263A1 (en) | 2005-02-04 | 2006-08-10 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Yellow emitting phosphor and light source with such phosphor |
KR100927154B1 (en) | 2005-08-03 | 2009-11-18 | 인터매틱스 코포레이션 | Silicate-based orange phosphors |
KR100666211B1 (en) | 2005-09-22 | 2007-01-09 | 한국화학연구원 | Composition of silicates phosphor for uv and long-wavelength excitation |
US20070069869A1 (en) * | 2005-09-29 | 2007-03-29 | Arnold Vaughn R | Automobile security and reporting system |
KR101258397B1 (en) | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | Copper-Alkaline-Earth-Silicate mixed crystal phosphors |
KR101055772B1 (en) | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | Light emitting device |
KR100626272B1 (en) | 2006-01-20 | 2006-09-20 | 씨엠에스테크놀로지(주) | Barium silicate phosphor, manufacturing method of the same, and white light emitting device and emitting film using the same |
KR100875443B1 (en) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | Light emitting device |
JP5521273B2 (en) | 2007-06-01 | 2014-06-11 | 日立化成株式会社 | Single crystal for scintillator, heat treatment method for producing single crystal for scintillator, and method for producing single crystal for scintillator |
WO2009025469A2 (en) * | 2007-08-22 | 2009-02-26 | Seoul Semiconductor Co., Ltd. | Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same |
WO2009028818A2 (en) | 2007-08-28 | 2009-03-05 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
-
2004
- 2004-06-10 KR KR1020040042396A patent/KR100665298B1/en active IP Right Grant
- 2004-12-22 DE DE602004028710T patent/DE602004028710D1/en active Active
- 2004-12-22 ES ES04106882T patent/ES2350830T3/en active Active
- 2004-12-22 AT AT04106882T patent/ATE478126T1/en active
- 2004-12-22 PT PT04106882T patent/PT1605030E/en unknown
- 2004-12-22 EP EP08166716.4A patent/EP2025734B1/en active Active
- 2004-12-22 DE DE202004021351U patent/DE202004021351U1/en not_active Expired - Lifetime
- 2004-12-22 EP EP10177830A patent/EP2253690A3/en not_active Withdrawn
- 2004-12-22 ES ES08166716.4T patent/ES2490603T3/en active Active
- 2004-12-22 EP EP04106882A patent/EP1605030B1/en active Active
- 2004-12-27 JP JP2004376611A patent/JP4159542B2/en not_active Expired - Fee Related
- 2004-12-28 TW TW093140901A patent/TWI328885B/en not_active IP Right Cessation
- 2004-12-28 TW TW098123458A patent/TWI344228B/en not_active IP Right Cessation
- 2004-12-30 US US11/024,702 patent/US7554129B2/en active Active
-
2005
- 2005-01-17 CN CNB2005100059133A patent/CN100442553C/en not_active Expired - Fee Related
- 2005-01-17 CN CN2008101776688A patent/CN101424388B/en active Active
- 2005-07-20 MX MX2007007648A patent/MX2007007648A/en active IP Right Grant
-
2007
- 2007-11-30 US US11/948,845 patent/US8066909B2/en not_active Expired - Fee Related
-
2008
- 2008-04-04 US US12/098,263 patent/US8089084B2/en not_active Expired - Fee Related
-
2010
- 2010-08-10 US US12/854,001 patent/US20100301371A1/en not_active Abandoned
Patent Citations (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2110162A (en) * | 1938-03-08 | Luminescent material | ||
US2402760A (en) * | 1942-06-27 | 1946-06-25 | Rca Corp | Luminescent material |
US2570136A (en) * | 1949-12-22 | 1951-10-02 | Du Pont | Infrared phosphors |
US3598752A (en) * | 1967-04-14 | 1971-08-10 | Itt | Ultraviolet emitting cathodoluminescent material |
US4110660A (en) * | 1975-03-19 | 1978-08-29 | Gte Sylvania Incorporated | Luminescent barium-lithium aluminate phosphors and lamp containing the same |
US4215289A (en) * | 1978-03-10 | 1980-07-29 | U.S. Philips Corporation | Luminescent material, luminescent screen provided with such a material and low-pressure mercury vapor discharge lamp provided with such a screen |
US4810416A (en) * | 1979-08-03 | 1989-03-07 | Kasei Optonix, Ltd. | Borate phosphor |
US5188763A (en) * | 1986-08-29 | 1993-02-23 | Gte Products Corporation | Method for preparing zinc orthosilicate phosphor |
US5060118A (en) * | 1989-04-06 | 1991-10-22 | Frank A. Arone | Apparatus for daylight color duplication |
US5433295A (en) * | 1993-02-04 | 1995-07-18 | Inventio Ag | Indicating element for elevators |
US5472636A (en) * | 1994-09-14 | 1995-12-05 | Osram Sylvania Inc. | Method of preparing manganese and lead coactivated calcium silicate phosphor |
US5853614A (en) * | 1996-12-17 | 1998-12-29 | Beijing Hongye Coating Materials Company | Long decay luminescent material |
US6084250A (en) * | 1997-03-03 | 2000-07-04 | U.S. Philips Corporation | White light emitting diode |
US7332746B1 (en) * | 1999-09-02 | 2008-02-19 | Toyoda Gosei, Co., Ltd. | Light-emitting apparatus |
US20040136891A1 (en) * | 2000-10-17 | 2004-07-15 | Takeshi Kijima | Oxide material, method for preparing oxide thin film and element using said material |
US7679101B2 (en) * | 2000-12-28 | 2010-03-16 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20030030063A1 (en) * | 2001-07-27 | 2003-02-13 | Krzysztof Sosniak | Mixed color leds for auto vanity mirrors and other applications where color differentiation is critical |
US20050141048A1 (en) * | 2002-03-19 | 2005-06-30 | Casio Computer Co., Ltd | Image reading apparatus and drive control method therefor |
WO2003080764A1 (en) * | 2002-03-22 | 2003-10-02 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
US20040135504A1 (en) * | 2002-03-22 | 2004-07-15 | Hiroto Tamaki | Nitride phosphor and method for preparation thereof, and light emitting device |
US20040079957A1 (en) * | 2002-09-04 | 2004-04-29 | Andrews Peter Scott | Power surface mount light emitting die package |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US20050001225A1 (en) * | 2002-11-29 | 2005-01-06 | Toyoda Gosei Co., Ltd. | Light emitting apparatus and light emitting method |
US7204607B2 (en) * | 2003-09-16 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | LED lamp |
US7206507B2 (en) * | 2003-12-19 | 2007-04-17 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Method and apparatus for producing untainted white light using off-white emitting diodes |
US7608200B2 (en) * | 2004-01-16 | 2009-10-27 | Mitsubishi Chemical Corporation | Phosphor and including the same, light emitting apparatus, illuminating apparatus and image display |
US20050264161A1 (en) * | 2004-05-27 | 2005-12-01 | Hitoshi Oaku | Light emitting device |
US8089084B2 (en) * | 2004-06-10 | 2012-01-03 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US8075802B2 (en) * | 2004-06-10 | 2011-12-13 | Seoul Semiconductor Co., Ltd. | Luminescent material |
US8070983B2 (en) * | 2004-06-10 | 2011-12-06 | Seoul Semiconductor Co., Ltd. | Luminescent material |
US7554129B2 (en) * | 2004-06-10 | 2009-06-30 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US20070247051A1 (en) * | 2004-09-07 | 2007-10-25 | Sumitomo Chemical Company, Limited | Phosphor, Phosphor Paste and Light-Emitting Device |
US7138770B2 (en) * | 2004-12-27 | 2006-11-21 | Top Union Globaltek Inc. | LED driving circuit |
US20060158090A1 (en) * | 2005-01-14 | 2006-07-20 | Intematix Corporation | Novel aluminate-based green phosphors |
US20090050847A1 (en) * | 2005-04-08 | 2009-02-26 | National Institute Of Advanced Industrial Science And Technology | Stress-Stimulated Luminescent Material, Manufacturing Method Thereof, Composite Material Including the Stress-Stimulated Luminescent Material, and Base Material Structure of the Stress-Stimulated Luminescent Material |
US20080036364A1 (en) * | 2006-08-10 | 2008-02-14 | Intematix Corporation | Two-phase yellow phosphor with self-adjusting emission wavelength |
US7679281B2 (en) * | 2007-03-19 | 2010-03-16 | Seoul Semiconductor Co., Ltd. | Light emitting device having various color temperature |
US20100207132A1 (en) * | 2007-08-28 | 2010-08-19 | Seoul Semiconductor Co., Ltd. | Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090146157A1 (en) * | 2007-12-10 | 2009-06-11 | Everlight Electronics Co., Ltd. | Light-emitting diode package |
US8138517B2 (en) * | 2007-12-10 | 2012-03-20 | Everlight Electronics Co., Ltd. | Light-emitting diode package |
US20100163919A1 (en) * | 2008-12-25 | 2010-07-01 | Hitoshi Kamamori | Lighting device |
US8134173B2 (en) * | 2008-12-25 | 2012-03-13 | Seiko Instruments Inc. | Lighting device having light emitting element mounted in glass substrate |
US11292964B2 (en) | 2016-03-14 | 2022-04-05 | Mitsui Mining & Smelting Co., Ltd. | Phosphor |
US11856858B2 (en) | 2017-10-16 | 2023-12-26 | Akoustis, Inc. | Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films |
US12102010B2 (en) | 2021-03-05 | 2024-09-24 | Akoustis, Inc. | Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices |
Also Published As
Publication number | Publication date |
---|---|
US20080067920A1 (en) | 2008-03-20 |
TW200541105A (en) | 2005-12-16 |
ES2490603T3 (en) | 2014-09-04 |
US8066909B2 (en) | 2011-11-29 |
KR100665298B1 (en) | 2007-01-04 |
EP1605030B1 (en) | 2010-08-18 |
EP2025734A3 (en) | 2009-06-10 |
CN101424388A (en) | 2009-05-06 |
ES2350830T3 (en) | 2011-01-27 |
US8089084B2 (en) | 2012-01-03 |
TWI328885B (en) | 2010-08-11 |
US20080224163A1 (en) | 2008-09-18 |
JP2005354027A (en) | 2005-12-22 |
DE202004021351U1 (en) | 2007-10-11 |
EP2253690A3 (en) | 2012-02-15 |
EP2025734B1 (en) | 2014-05-14 |
PT1605030E (en) | 2010-11-22 |
CN100442553C (en) | 2008-12-10 |
CN1707819A (en) | 2005-12-14 |
KR20050117164A (en) | 2005-12-14 |
TWI344228B (en) | 2011-06-21 |
EP2025734A2 (en) | 2009-02-18 |
DE602004028710D1 (en) | 2010-09-30 |
EP1605030A2 (en) | 2005-12-14 |
TW200952225A (en) | 2009-12-16 |
CN101424388B (en) | 2011-04-13 |
JP4159542B2 (en) | 2008-10-01 |
US20050274972A1 (en) | 2005-12-15 |
US7554129B2 (en) | 2009-06-30 |
EP1605030A3 (en) | 2007-09-19 |
MX2007007648A (en) | 2007-09-18 |
EP2253690A2 (en) | 2010-11-24 |
ATE478126T1 (en) | 2010-09-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8089084B2 (en) | Light emitting device | |
US8900482B2 (en) | Light emitting device | |
CA2592096C (en) | Light emitting device | |
US7892453B2 (en) | Phosphor composition and method for producing the same, and light-emitting device using the same | |
KR100968844B1 (en) | light emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |