KR100658700B1 - Light emitting device with RGB diodes and phosphor converter - Google Patents

Light emitting device with RGB diodes and phosphor converter Download PDF

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KR100658700B1
KR100658700B1 KR20040034001A KR20040034001A KR100658700B1 KR 100658700 B1 KR100658700 B1 KR 100658700B1 KR 20040034001 A KR20040034001 A KR 20040034001A KR 20040034001 A KR20040034001 A KR 20040034001A KR 100658700 B1 KR100658700 B1 KR 100658700B1
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light
light emitting
emitting device
emitting element
wavelength
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KR20050108816A (en
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로스 군둘라
이정훈
월터 튜스
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로스 군둘라
서울옵토디바이스주식회사
월터 튜스
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Abstract

Disclosed herein is a light emitting device including at least three light emitting diodes having different peak emission wavelengths to primarily emit light in a blue, green or red wavelength range, and a wavelength-conversion means to convert primary light into secondary light in a visible light wavelength range, The light emitting device of the current invention has a high color temperature of 2,000 to 8,000 K or 10,000 K and a high color rendering index of 90 or more, and emits yellow-green light or orange light having a wide emission wavelength range. Since the light emitting device having high color temperature and excellent color rendering properties can easily realize desired emission on the color coordinate system, it is applicable to mobile phones, notebook computers, and keypads or backlight units for various electronic products, and in particular, automobiles and exterior and interior lighting fixtures.

Description

RGB 발광소자와 형광체를 조합한 발광장치{Light emitting device with RGB diodes and phosphor converter} Combining the RGB light-emitting element and a phosphor light emitting device {Light emitting device with RGB diodes and phosphor converter}

도 1은 본 발명의 바람직한 제 1실시예에 따른 발광장치의 개략적 종단면도로서, 3개의 발광소자 및 파장변환수단을 구비하는 칩형 패키지를 나타낸 도면, 1 is a schematic longitudinal sectional view of a light emitting device according to a first embodiment of the present invention, a view showing a chip-type package comprising three light emitting elements and wavelength conversion means,

도 2는 본 발명의 바람직한 제 1실시예에 따른 RGB발광소자와 오렌지색 형광체가 조합된 발광장치의 발광 스펙트럼을 나타낸 그래프, Figure 2 is a graph showing the emission spectrum of the RGB light-emitting element and a phosphor, an orange light emitting device in combination according to a first embodiment of the present invention,

도 3은 본 발명의 바람직한 제 1실시예에 따른 RB발광소자와 서로 다른 발광피크를 가지는 2개의 형광체 및 오렌지색 형광체가 조합된 발광장치의 발광스펙트럼을 나타낸 그래프, 3 is shown a second preferred emission spectra of the two phosphors and the orange phosphor is a combination a light emitting device of the first embodiment having a different emission peaks from each other and RB light emitting device according to an embodiment of the present invention, a graph,

도 4는 본 발명의 바람직한 제 2실시예에 따른 발광장치의 개략적 종단면도로서, 4개의 발광소자 및 파장변환수단을 구비하는 칩형 패키지의 종단면도, Figure 4 is a longitudinal sectional view of a chip-type package having a second preferred embodiment as a schematic longitudinal cross-sectional view of the luminescent device in the example shown, four light emitting elements and wavelength conversion means of the present invention,

도 5는 본 발명의 바람직한 제 3실시예에 따른 탑형 패키지의 개략적 종단면도, Figure 5 is a schematic longitudinal sectional view of the column-type package according to a third embodiment of the present invention,

도 6은 본 발명의 바람직한 제 4실시예에 따른 싸이드형 패키지의 사시도, 6 is a perspective view of ssayideu type package according to a fourth embodiment of the present invention,

도 7은 본 발명의 바람직한 제 5실시예에 따른 램프형 패키지의 개략적 종단면도, Figure 7 is a schematic longitudinal sectional view of a lamp-type package according to a fifth embodiment of the present invention,

도 8은 본 발명의 바람직한 제 6실시예에 따른 고출력용 패키지의 개략적 종 단면도, 및 8 is a schematic longitudinal cross-sectional view of the package for high power according to a sixth embodiment of the invention, and

도 9는 본 발명의 바람직한 제 7실시예에 따른 고출력용 패키지의 개략적 종단면도이다. Figure 9 is a schematic longitudinal sectional view of a package for high power according to a seventh embodiment of the present invention.

*도면의 주요부분에 대한 설명* * Description of the Related Art *

1 : 기판 2 : 전도성 와이어 1: substrate 2: conductive wires

3 : 파장변환수단 5 : 전극패턴 3: wavelength changing means 5: electrode pattern

6, 7, 8, 21 : 발광소자 9 : 접착제 6, 7, 8, 21: light-emitting element 9: Adhesive

10 : 몰딩부 10: The molding part

11, 20, 30, 40, 50, 60, 70 : 발광장치 11, 20, 30, 40, 50, 60, 70: light-emitting device

31 : 리플렉터 51, 52 : 리드전극 31: reflector 51, 52: lead electrode

61, 62, 71 : 힛싱크 61, 62, 71: heat sink

본 발명은 발광장치에 관한 것으로서, 보다 상세하게는, RGB발광소자를 기본으로 파장변환수단을 조합하여 높은 색온도 및 연색성을 제공하며, 이에 의해, 가전제품, 오디오, 및 통신제품과 같은 응용기기 뿐만 아니라 실내외 각종 디스플레이, 그리고, 자동차 및 조명에 응용할 수 있는 파장변환 발광장치에 관한 것이다. The present invention relates to a light emitting device, and more particularly, to a default the RGB light-emitting device combining the wavelength conversion means to provide high color temperature and color rendering property, this, as applications, such as home appliances, audio, and communications products as relates to a wavelength converted light emitting device that can be applied to various indoor and outdoor displays, and, automobile and illumination.

백색광을 방사하는 파장변환 발광장치(Light emitting Device, 이하 LED라 함)는 대략 460nm의 블루색(Blue)을 방사하는 Ga(In)N 발광소자와 옐로우색(Yellow)을 방사하는 YAG:Ce3+ 인광체를 조합함으로써 최근 생산된다(BY접근방식, US 5,998,925 및 EP 862794 참조). Wavelength converted light emitting device for emitting white light (Light emitting Device, less LED & quot;) is a YAG emitting a Ga (In) N light-emitting element and a yellow color (Yellow) for emitting a blue color (Blue) of approximately 460nm: Ce3 + phosphor the combination is the last production (bY reference approach, US 5,998,925 and EP 862794). 그러나 이러한 백색 발광장치는 특정 컬러성분(주로 레드성분)의 부재에 의해 야기되는 낮은 색온도(Color Temperature, 약 6,000~8,000)와 불량한 연색성(Color Rendering, 약 60~70) 때문에, 일반적인 발광장치로서의 사용이 제한적이다. However, this white light emitting device is used as due to the specific color component low color temperature (Color Temperature, about 6000-8000) and poor color rendering properties (Color Rendering, 60 to 70), which is caused by the absence of (mainly red component), a typical light-emitting device this is limited.

그 대안의 방법이 3색(적색, 녹색, 청색)을 혼합하여 백색을 구현하는 방법일 수 있으며(RGB접근법), WO98/39805호에 그 자세한 기술설명이 개시되어 있다. The method of alternative is a mixture of three colors (red, green, and blue) can be a way to implement the white and there is disclosed that additional techniques described in (RGB approach), WO98 / 39805 Ho.

하지만, 각 RGB발광소자들은 그 재질이나 특성의 차이로 광도(Luminous intensity)가 상이하고, 이에 의해, RGB접근방식에 의해서도 가시광선 스펙트럼영역내의 모든 컬러들을 구현하기 곤란한 문제가 있다. However, each of the RGB light-emitting devices, there is a problem difficult to implement all of the colors in the thereby are different, and light intensity (Luminous intensity) of the difference in the material or characteristic, visible light spectrum by the RGB approach area.

즉, 레드, 그린, 및 블루는 순차적으로 그 파장이 짧아지는데, 파장이 짧아 은 발광소자는 그 광도도 작아진다. That is, red, green, and blue are makin shorter the wavelength sequentially, the shorter wavelength of the light emitting element is also small, the light intensity. 따라서 레드와 그린 발광소자는 블루 발광소자에 비하여 상대적으로 광도가 크고, 더욱이 최근에는 제조기술상의 이유로 발광소자의 상대적인 광도차가 더욱 커졌다. Therefore, red and green light emitting device is large and is relatively light intensity than the blue light emitting element, and further recently, car relative brightness of the light emitting device further increased the manufacturing technical reasons. 결국, 상이한 파장을 가지는 RGB 3개의 발광소자를 조합한 BGB접근방식에서도 사용자가 원하는 예를 들어, 조명 또는 자동차용 백색의 발광을 구현하기 어려운 것이다. After all, in BGB approach combining the RGB 3 of light emitting devices having different wavelength, for example, the user desires, it is difficult to implement a white light emitting illumination or car for.

본 발명의 목적은, 종래의 이러한 문제점을 고려하여 안출된 것으로, 색온도가 2,000 내지 8,000 또는 10,000 범위내로 높고 연색성이 90이상으로 우수하여 가전제품, 오디오, 및 통신제품과 같은 응용기기 뿐만 아니라 실내외 디스플레이, 그 리고, 자동차 및 조명등 다양한 제품에 쉽게 응용할 수 있는 파장변환 발광장치를 제공하는 것이다. An object of the present invention has been conceived in consideration of the prior art this problem, the high into the color temperature is 2,000 to 8,000 or 10,000 range, the color rendering property is excellent as 90 or more, as well as applications, such as home appliances, audio, and communication products, indoor and outdoor displays , the hitting is to provide a wavelength conversion light emitting device that can be easily applied to the automobile, and a variety of lighting products.

본 발명의 다른 목적은, 좁은 발광대역의 발광소자와 형광체를 조합하여 가시광선 스펙트럼영역의 다양한 컬러 및 높은 연색성을 제공가능한 상대적으로 넓은 발광대역의 옐로우-그린 또는 오렌지색을 구현할 수 있는 좁은 발광대역의 발광소자와 형광체를 조합한 파장변환 발광장치를 제공하는 것이다. It is another object of the present invention, by combining the light emitting element and the phosphor of narrow to wide variety of colors, and yellow of the service available relatively wide to broadband to the high level of color rendering properties in the visible spectral region with a narrow to wide to implement green or orange wavelength combining a light emitting element and a fluorescent material to provide a converted light emitting device.

상기 목적은, 본 발명에 따르면, 블루, 그린 및 레드 스펙트럼영역의 1차광을 각각 발생시키는 서로 상이한 발광파장을 가지는 적어도 3개의 발광소자;상기 적어도 3개의 발광소자를 봉지하는 몰딩부; The above object is, according to the present invention, the blue, green, and at least three light-emitting device having a light emission wavelength different from each other to each generate a primary light in the red spectral region; molding unit for sealing the at least three light-emitting elements; 및 상기 발광소자들 상부 및 상기 몰딩부 내에 분포되어, 상기 1차광을 가시광선 스펙트럼영역의 2차광으로 파장변환시키는 파장변환수단을 포함하며, 상기 파장변환수단은 발광피크가 450-520nm인 형광체; And wherein the light emitting elements distributed in the upper portion and the molding portion, the fluorescent material comprises a wavelength conversion means for converting the wavelength of the primary light into secondary light in the visible spectral region, and the wavelength conversion means emission peak at 450-520nm; 발광피크가 500-570nm인 형광체; The fluorescent emission peak at 500-570nm; 및 발광피크가 570-680nm인 형광체 중 적어도 하나를 조합하여 구성된 발광장치에 의하여 달성된다. And a light emitting peak in a combination of at least one of the phosphor 570-680nm is achieved by the light emitting device is configured.

여기서, 초기발광소자는 블루 또는 블루-그린 스펙트럼영역에서 발광하는 적어도 하나의 초기발광소자를 포함하는 것이 바람직하다. Here, the initial light emitting element is a blue or blue - preferably comprises at least one initial light-emitting device of emitting light in the green spectral region.

여기서, 적어도 3개의 초기발광소자들은, 피크파장이 440-500nm인 제 1발광소자; Here, at least three initial light-emitting elements of the first light emitting device, a peak wavelength of 440-500nm; 피크파장이 500-570nm인 제 2발광소자; A second light emitting element peak wavelength of 500-570nm; 및 피크파장이 570-670nm인 제 3발광소자; And a third light emitting element whose peak wavelength of 570-670nm; 중에서 선택하여 구성할 수 있다. It can be configured to select from. 그리고 피크파장이 410-460nm인 제 4발광소자;를 더 포함시킬 수도 있다. And the fourth light emitting element peak wavelength of 410-460nm; may further include.

이 때, 상기 파장변환수단은, 단일의 형광체 또는 복수개의 형광체들의 조합으로 구성하는 것이 바람직하며, 예를 들어, 발광피크가 450-520nm인 형광체; In this instance, the wavelength conversion means, the fluorescent material and preferably consists of a single phosphor or a combination of a plurality of phosphors, for example, emission peak at 450-520nm; 발광피크가 500-570nm인 형광체; The fluorescent emission peak at 500-570nm; 및 발광피크가 570-680nm인 형광체; And the emission peak of the phosphor is 570-680nm; 중 적어도 하나를 조합하여 구성가능하다. The combination of at least one possible configuration. 그리고 각각의 형광체들은, 해당 스펙트럼영역내의 형광체들 중 적어도 하나의 형광체들을 혼합하여 구성할 수 있음은 물론이다. And each of the fluorescent materials are, can be configured by mixing the at least one phosphor of the phosphor in the spectral region as a matter of course.

본 발명의 발광장치에서는, 상기 발광소자들과 상기 파장변환수단을 단일의 패키지 내에 구성하는 것이 바람직하다. The light emitting device of the present invention, the wavelength conversion means and the light-emitting element is preferably configured in a single package. 이 때, 상기 파장변환수단은 상기 발광소자들의 상면, 하부면 및 측면 중 적어도 어느 하나에 배치되며, 전도성 접착제 또는 몰딩부에 분포될 수 있다. In this instance, the wavelength conversion means are disposed in at least one of an upper surface, a lower surface and side surfaces of the light-emitting element, may be dispersed in the conductive adhesive or a molding member.

한편, 본 발명의 바람직한 제 1실시예 및 제 2실시예에 따른 발광장치에서는, 상기 단일의 패키지를 기판위에 상기 적어도 하나의 발광소자가 실장되고, 상기 발광소자 주위에 상기 파장변환수단이 배치되어 있는 칩형으로 구성할 수 있다. On the other hand, in the light emitting device according to a first embodiment and a second embodiment of the invention, the packages of the single on a substrate, at least one light emitting element is mounted, wherein the wavelength conversion means around the light emitting element is disposed which it can be configured as a chip.

본 발명의 바람직한 제 3실시예 및 제 4실시예에 따른 발광장치는, 리플렉터가 형성된 기판위에 상기 적어도 하나의 발광소자가 실장되고, 상기 발광소자 주위에 상기 파장변환수단이 배치되어 탑형 패키지로 구성가능하다. The third preferred embodiment and the light emitting device according to the fourth embodiment, the reflector is said at least one light emitting device mounted on a substrate is formed, wherein the wavelength conversion means around the light emitting element is disposed consists of column-type package of the present invention It is possible.

제 1 내지 제 4실시예에서는, 상기 기판을 금속성 재질로 형성하면 발광소자들로부터 발생되는 열을 용이하게 방출시킬 수 있다. The first to fourth embodiment, by forming the substrate of a metal material it is possible to easily dissipate heat generated from the light emitting element. 여기서, 상기 금속성 기판에 방열판;을 더 장착시키면, 그 방열효과는 더욱 증대된다. Here, the heat sink to the metallic substrate, when mounting the more, the heat radiation effect is further increased.

제 1 내지 제 4실시예에서는 또한, 상기 기판 상에서 상기 발광소자 및 상기 파장변환수단을 봉지하는 몰딩부; The first to the fourth embodiment, also, a molding part for sealing the light emitting element and the wavelength conversion means on said substrate; 더 포함하는 것이 바람직하며, 상기 몰딩부에 상기 파장변환수단을 골고루 분포시킬 수 있다. Further include, and can be evenly distributed to the wavelength conversion means to the molding part.

본 발명의 바람직한 제 5실시예에 따른 발광장치는, 한 쌍의 전극리드 중 일측에 상기 적어도 하나의 발광소자가 실장되고; The light emitting device according to a fifth embodiment of the present invention, and the at least one light-emitting elements mounted on one side of the pair of the electrode leads; 상기 발광소자 주위에 상기 파장 변환수단이 배치되며; Wherein said wavelength converting means is disposed around the light emitting device; 상기 발광소자와 상기 파장변환수단이 몰딩부에 의해 봉지되어 있는 램프형 패키지로 구성가능하다. The light-emitting element and the wavelength conversion means can be configured as a lamp-type package which is sealed by the molding member.

본 발명의 바람직한 제 6실시예 및 제 7실시예에 따른 발광장치는, 상기 적어도 하나의 발광소자에서 발생되는 열을 방출하는 힛싱크를 구비하며, 상기 발광소자 주위에 상기 파장변환수단이 배치되어 있는 고출력용 패키지로 구성할 수 있다. The light emitting device according to a sixth embodiment and a seventh embodiment of the present invention, wherein, and at least comprising a heat sink for emitting heat generated from a light emitting element, said wavelength converting means around the light emitting element is disposed which it can be configured as a high-output package. 이 때, 상기 힛싱크에 방열판을 추가로 장착하면, 보다 효과적으로 열을 방출시킬 수 있어서 바람직하다. At this time, when mounting an additional heat sink to the heat sink, it is more preferable to be able to effectively dissipate heat.

한편, 본 발명에서는, 실리콘 카바이드 또는 사파이어 기판 상에 질화물 에피택셜층을 형성시킨 구조를 가지는 발광소자를 사용할 수 있다. In the present invention, it is possible to use a light emitting device having a structure which forms a nitride epitaxial layer on a silicon carbide or sapphire substrate.

이하에서는 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 보다 구체적으로 설명한다. Hereinafter, more specifically to the preferred embodiment of the present invention with reference to the accompanying drawings.

도 1은 본 발명의 제 1실시예에 따른 발광장치의 개략적 종단면도로, 3개의 발광소자 및 파장변환수단이 조합된 칩형패키지가 도시되어 있다. Figure 1 is a schematic longitudinal sectional view of the road, the three light emitting elements and wavelength conversion means a combination of a chip-type package light emitting device according to a first embodiment of the present invention. 이 도면을 참조하면, 기판(1)의 양측 단부에 각각 전극패턴(5)이 형성되어 있고, 일측 전극패턴(5)상에 서로 다른 파장의 광을 1차적으로 발생시키는 3개의 발광소자(6, 7, 8)가 실장되어 있다. Referring to this figure, there is a respective electrode pattern 5 are formed at the respective side end portions of the substrate 1, three light emitting elements for different generates a wavelength of the light is primarily on one side electrode patterns (5) (6 , 7, 8) it is mounted. 각 발광소자(6, 7, 8)는 전도성 접착제(9, Paste)를 매개하여 전극패턴(5)에 실장되고, 각 발광소자(6, 7, 8)의 전극과 타측 전극패턴(도시 않음)은 도전성 와이어(2)로 연결되어 있다. Each light-emitting device (6, 7, 8) is a conductive adhesive (9, Paste) the parameters to be mounted on the electrode pattern 5, each light emitting device other side electrode pattern (not shown) to the electrodes (6, 7, 8) is connected to the conductive wires (2).

3개의 발광소자(6, 7, 8) 상면 및 측면에는 파장변환수단(3)이 배치되어 있다. Upper and side surfaces of three light emitting elements (6, 7, 8) is arranged a wavelength converting means (3). 파장변환수단(3)은 발광소자에서 발생되는 광을 가시광선스펙트럼 영역내의 2 차광으로 파장변환시킨다. Wavelength converting means 3 converts the wavelength of light generated from the light emitting element to the secondary light in the visible spectrum region. 이러한 파장변환수단(3)은 경화성 수지 예를 들어, 에폭시수지 또는 실리콘수지에 혼합된 형태로 각 발광소자(6, 7, 8)에 도팅가능하다. The wavelength conversion means 3 can be Dotting the respective light emitting devices (6, 7, 8) in the form of mixture of curable resin for example, an epoxy resin or a silicone resin.

파장변환수단(3)은 또한 전도성 접착제(9)에 혼합된 형태로 각 발광소자(6, 7, 8)의 하부면에도 배치시킬 수 있다. Wavelength conversion means 3 may also be disposed in the lower surface of each light emitting device (6, 7, 8) in a form mixed in the conductive adhesive (9).

3개의 발광소자(6, 7, 8)가 실장된 기판(1)의 상부는 경화성 수지로 몰딩(10)되어 있다. The upper portion of three light-emitting elements (6, 7, 8) is a printed circuit board (1) is a molding 10 with the curable resin. 본 실시예(11)에서는, 파장변환수단(3)이 발광소자(6, 7, 8)의 상면 및 측면에 일정한 두께로 도팅되어 있지만, 경화성 몰딩부(10)에 전체적으로 고르게 분포되는 형태로 제작 가능함은 물론이다. In this embodiment 11, the wavelength conversion means 3 produced in the form as, but is Dotting a constant thickness on the upper surface and side surfaces of the light emitting elements (6, 7, 8), as a whole uniformly distributed in the curable molding section 10 available as a matter of course. 이러한 제조방법은 본 발명자에 의해 기출원된 US6,482,664호를 참조하기 바란다. Such a manufacturing method, please refer to the number US6,482,664 issued circle by the present inventors.

한편, 3개의 발광소자(6, 7, 8)중 제 1발광소자(6)는 그 피크파장이 440nm 내지 500nm이고, 제 2발광소자(7)의 피크파장은 500nm 내지 570nm이며, 제 3발광소자(8)의 피크파장은 570nm 내지 670nm이다. On the other hand, the first light-emitting element 6 of the three light emitting elements (6, 7, 8) is the peak wavelength of 440nm to 500nm, the peak wavelength of the second light-emitting element 7 is 500nm to 570nm, the third light emitting peak wavelength of the element 8 is 570nm to 670nm. 여기서, 제 1발광소자(6)는 퍼플블루(Pupple Blue) 내지 블루(Blue)파장 범위내의 광을 발생가능하고, 제 2발광소자(7)는 그린(Green) 내지 옐로우그린(Yellow Green)파장 범위내의 광을 발생가능하며, 제 3발광소자(8)는 그린계옐로우(Greenish Yellow) 내지 레드(red)파장 범위내의 광을 발생가능하다. Here, the first light-emitting element 6 is Purple Blue (Pupple Blue) to blue (Blue) can generate light within the wavelength range and the second light-emitting element 7 is green (Green) to yellow-green (Yellow Green) wavelength It can generate light within the range, and the third light emitting element 8 may be caused to light in the green-based yellow (Greenish yellow) to red (red) wavelength range. 이들 제 1, 제 2 및 제 3발광소자(6, 7, 8)는 예를 들어, 실리콘 카바이드 또는 사파이어 기판 상에 질화물 에피택셜층을 형성시킨 발광소자를 사용가능하다. These first, second and third light emitting elements (6, 7, 8), for example, it is possible to use a light emitting element which forms a nitride epitaxial layer on a silicon carbide or sapphire substrate.

파장변환수단(3)은, 단일의 형광체 또는 복수의 형광체가 선택적으로 혼합된 형태로 구성된다. Wavelength converting means 3, a single phosphor or multiple phosphors are selectively configured in a form mixed with. 즉, 그 발광피크가 450nm 내지 520nm인 제 1형광체, 500nm 내지 570nm인 제 2형광체, 및 570nm 내지 680nm인 제 3형광체중 선택된 적어도 하나의 형광체를 혼합하여 구성 가능한 것이다. In other words, the possible emission peak at 450nm to 520nm is the first fluorescent material, 500nm to 570nm of the second phosphor, and 570nm to 680nm in the mixture of at least one phosphor selected one of three phosphor configuration. 여기서, 제 1형광체는 블루색 광을 발생가능하고, 제 2형광체는 그린 내지 옐로우색 광을 발생가능하며, 제 3형광체는 옐로우 내지 레드색 광을 발생가능하다. Here, the first phosphor can generate a blue color light, the second phosphor is possible generate a green to yellow color light, a third fluorescent material is capable of generating a yellow to red color of light. 그리고 각 형광체는 해당 스펙트럼영역내의 상이한 발광피크를 가지는 형광체를 혼합하여 구성할 수도 있음은 물론이다. And each fluorescent material may then be formed by mixing a phosphor with a different emission peak in the spectral region as a matter of course.

파장변환수단(3)은 예를 들어, 화학식이 (Ba, Sr, Ca)xSiO4:Eu 및/또는 Mn인 실리케이트 계열의 형광체를 사용가능하다. Wavelength conversion means 3, for example, the formula (Ba, Sr, Ca) xSiO4: it is possible to use a fluorescent material of the silicate series of Eu and / or Mn. 이러한 경우, 예를 들어, Ba, Sr, 및 Ca의 배합비율, (Ba, Sr, Ca)xSiO4:Eu와 (Ba, Sr, Ca)xSiO4:Mn의 배합비율, 및/또는 Ba, Sr, Ca, Mn, 및 Eu의 배합비율 등을 적절히 조절하면, 450nm 내지 520nm, 500nm 내지 570nm, 또는 570nm 내지 680nm의 발광피크를 가지는 형광체를 제공가능하다. In this case, for example, Ba, Sr, and the blending ratio of Ca, (Ba, Sr, Ca) xSiO4: Eu and (Ba, Sr, Ca) xSiO4: blending ratio of Mn, and / or Ba, Sr, Ca , Mn, and the like by properly adjusting the blending ratio of Eu, it is possible to provide the phosphor having a luminescence peak of 450nm to 520nm, 500nm to 570nm, or 570nm to 680nm. 이와 같은 방식으로 형광체의 배합비율을 상이하게 조절하여 파장변환수단(3)을 얻을 수 있는 것이다. In this manner different from that to adjust the composition ratio of the phosphor to be obtained in the wavelength conversion means (3).

이러한 구성의 발광장치(11)에서는, 제 1발광소자(6), 제 2발광소자(7), 및 제 3발광소자(8)에 전극패턴(5)을 통해 외부 전원이 공급된다. In the light emitting device 11 having such a configuration, the first light emitting device 6, the external power source through a second light-emitting element 7, and the electrode 3 to the light emitting element 8 pattern 5 is fed. 그러면, 제 1발광소자(6)에서 피크파장이 450nm 내지 520nm인 광이, 제 2발광소자(7)에서 피크파장이 500nm 내지 570nm인 광이, 제 3발광소자(8)에서 피크파장이 570nm 내지 680nm인 광이 각각 1차적으로 발생된다. Then, the first light emission peak wavelength in the element 6 is 450nm to 520nm of the light, the second light-emitting element 7, the peak wavelength of 500nm to 570nm of the light, the third light-emitting element 8, the peak wavelength of 570nm in the 680nm to the light each are generated primarily. 이 때, 형광체들은 각 발광소자(6, 7, 8)로부터의 광에 의해 여기되면서, 각기 발광피크가 450nm 내지 520nm, 500nm 내지 570nm, 및/또는 570nm 내지 680nm인 2차광을 발생시킨다. In this case, as the phosphor are excited by light from the respective light emitting devices (6, 7, 8), and the respective emission peak caused the 450nm to 520nm, 500nm to 570nm, and / or 570nm to 680nm of the secondary light.

그 결과 발광장치(11)에서는, 제 1, 제 2, 및 제 3발광소자(6, 7, 8)에서 발 생되는 1차광들과, 각 형광체들에 의해 파장변환된 2차광들이 혼색되어, 해당 가시광선스펙트럼 영역의 색이 구현된다. As a result the light emitting device 11, first, second, and third light emitting device with the primary light which occurs in the (6, 7, 8), the wavelength-converted secondary light by the phosphors have been mixed, of the visible light spectrum color area it is implemented. 여기서, 형광체의 혼합비율을 적절히 조절하면, 사용자가 원하는 색을 구현할 수 있다. Here, by properly adjusting the mixing ratio of the phosphors, and the user can implement a desired color.

예를 들어, 발광피크가 450nm 내지 520nm인 형광체와 500nm 내지 570nm인 형광체만 구비하는 경우, 570nm 내지 680nm의 2차광은 발생되지 아니한다. For example, if the light emission peak is provided with only phosphor of 450nm to 520nm and 500nm to 570nm is a phosphor, the light-shielding 2 of 570nm to 680nm shall not occur. 이러한 경우, 2개의 발광소자에서 발생되는 1차광들과 형광체들에 의해 파장변환된 2차광들만이 혼색되어, 가시광선 스펙트럼영역내의 다른 색이 구현되는 것이다. In this case, the color mixture is converted, only the secondary light wavelength by the primary light and the phosphor which is generated in the two light-emitting device, it will be a different color in the visible spectrum region implementation. 여기서, 형광체의 혼합비율 뿐만 아니라 해당 피크파장범위 내에 있는 발광소자를 적절히 선택하여 원하는 색좌표의 발광을 구현할 수 있다. Here, as well as the mixing ratio of phosphor to implement the light emission of a desired color coordinate by appropriately selecting the light emitting element within the peak wavelength range.

한편, 본 실시예에 따라 3개의 상이한 파장의 발광소자(RGB, 6, 7, 8)에 오렌지색 파장변환수단을 조합하면, 도 2에서 볼 수 있는 발광스펙트럼을 가지는 발광장치가 제공된다. On the other hand, if the combination of the orange wavelength conversion means to the light emitting element of the three different wavelengths (RGB, 6, 7, 8) in accordance with the present embodiment, there is provided a light emitting device having a luminescence spectrum can be seen in FIG. 이러한 본 실시예의 발광장치는, 2,500K 내지 3,000K 범위 내의 색온도 및 약 98정도의 연색성을 제공가능하다. The light emitting device of this embodiment, it is possible provide a color rendering and color temperature of about 2,500K to 3,000K in the 98 range. 여기서, 발광소자 및 형광체를 적절히 선택하면, 사용자가 요구하는 색좌표값의 발광을 용이하게 구현할 수 있다. Here, when selecting an appropriate light-emitting element and the phosphor, the light emission of a color coordinate value requested by the user can be easily implemented.

예를 들어, 레드(R) 및 블루(B)색 발광소자를 선택하고, 여기에, 발광파장이 상이한 3종류의 형광체 즉, 오렌지색, 그린색 1, 및 그린색 2를 선택하면, 도 3에서 볼 수 있는 바와 같은 발광스펙트럼을 얻을 수 있다. For example, red (R) and blue (B) select the color light-emitting element, here, the light emitting wavelength of three types of phosphors different That is, by selecting an orange, green color 1, and the green color 02, from 3 the emission spectrum, as can be seen can be obtained. 이러한 경우, 약 3,000K 정도의 색온도 및 약 96정도의 연색성을 제공가능하다. In this case, it is possible provide a color temperature and color rendering of about 96 degree, about 3,000K.

이외에도, 발광소자와 파장변환수단을 구성하는 형광체를 적절히 선택할 수 있다. In addition, it is possible to appropriately select the phosphor constituting the light emitting element and the wavelength conversion means. 예를 들어, 도 4는 본 발명의 바람직한 제 2실시예에 따른 발광장치의 개 략적 종단면도로서, 4개의 발광소자 및 파장변환수단이 조합된 칩형 패키지가 도시되어 있다. For example, Figure 4 is a more strategic longitudinal sectional view of a light emitting device according to a second embodiment of the present invention, a chip-type package, the four light-emitting element and the wavelength conversion means is combined is shown.

본 제 2실시예의 발광장치는, 전술한 도 1 및 도 2의 제 2실시예와 동일 구조를 가지며, 단지 1개의 발광소자가 더 추가되어 있다. The light emitting device of the second embodiment has, has the same structure as the second embodiment of FIG. 1 and 2, there is only a single light emitting device further added. 추가된 제 4발광소자는 피크파장이 410nm 내지 460nm로 퍼플계 블루색 광을 발생시킨다. The fourth light-emitting element is added, the peak wavelength to generate a purple-based blue color light as 410nm to 460nm.

이러한 구성에서도 외부전원이 전극패턴(5)을 통해 각 발광소자에 공급되면, 제 1, 제 2, 제 3, 및 제 4발광소자(6, 7, 8, 21)는 해당 피크파장의 광을 각각 1차적으로 발생시킨다. When in this configuration an external power supply through the electrode pattern 5 is supplied to each light emitting device, the first and the second, third, and fourth light emitting elements (6, 7, 8, 21) is light of the peak wavelength of respectively, to generate the primary. 그러면, 형광체에 의해 여기되면서 1차광의 일부가 450nm 내지 520nm, 500nm 내지 570nm, 및 570nm 내지 680nm의 발광피크를 가지는 2차광으로 파장변환된다. Then, as the fluorescent substance excited by a part of the primary light is wavelength-converted into secondary light having a luminescence peak of 450nm to 520nm, 500nm to 570nm, and 570nm to 680nm. 이 때, 각 발광소자(6, 7, 8, 21)에서 발광된 1차광들과 형광체에 의해 파장변환된 2차광이 혼색되어 가시광선스펙트럼 영역내의 발광이 구현되는 것이다. At this time, the wavelength of the converted secondary light is mixed by the primary light and the fluorescent emission from each light emitting element (6, 7, 8, 21) to which the light emission in the visible spectrum region implementation.

여기서, 각 형광체는 해당 파장범위 내에서 각기 상이한 발광피크를 가지는 형광체들을 혼합하여 구성할 수 있다. Here, the phosphors can be configured by mixing the fluorescent material, each having a different light emission peak within the wavelength range. 그리고 각 형광체의 혼합비율을 적절히 조절하여, 사용자가 원하는 색좌표로 발광을 시프트시킬 수 있음도 물론이다. And it is also apparent that by appropriate adjustment of the mixing ratio of the phosphors, the user to shift the emission to the desired color coordinate.

이상, 본 실시예에 따른 발광장치(20)는, 도 1 및 도 2와 관련하여 설명한 바와 마찬가지의 목적 및 효과를 달성할 수 있다. Or more, the light-emitting device 20 according to this embodiment, it is possible to achieve the objects and effects of the similar manner described in conjunction with Figs. 이러한 제 1 및 제 2실시예(11, 20)의 발광장치는, 색온도가 높고 연색성이 우수하여 가전제품, 오디오, 및 통신제품과 같은 전자기기 뿐만 아니라 실내외 각종 디스플레이, 특히, 자동차 및 조명에 용이하게 응용할 수 있다. To the first and second embodiments the light emitting devices (11, 20), a high color temperature color rendering is excellent in electrical appliances, as well as indoor and outdoor variety of display electronic devices such as audio, and communication products, and in particular, automobiles and lighting easy it can be applied.

한편, 도 1 내지 도 4와 관련하여 상술한 본 발명의 기술적 특징은, 단지 칩형 패키지에만 국한되지 아니하고 다양한 형태의 LED패키지에 그대로 적용하여 동일 목적 및 효과를 달성가능하다. Meanwhile, the technical feature of the present invention as described above in connection with Figure 1 to Figure 4, it is only possible to achieve the same purpose and effect as applied to various types of LED package, nor be limited to chip-type package.

이하, 각종 LED패키지에 본 기술을 적용한 실시예를 도면을 참조하여 설명한다. Hereinafter, the embodiment of the present technique in various LED package will be described with reference to the drawings. 여기서, 상술한 도 1 내지 도 4와 동일 명칭 및 구성에 대해서는 동일한 참조번호를 부여하며, 각 발광소자 및 파장변환수단과 관련된 기술적 원리도 동일하게 적용된다. Here, the same reference numbers for the same name and configuration as the above-mentioned 1 to 4, and is also equally applicable technical principles relating to the respective light emitting devices and wavelength conversion means.

도 5는 본 발명의 바람직한 제 3실시예에 따른 탑형 패키지의 종단면도이다. Figure 5 is a longitudinal sectional view of a column-type package according to a third embodiment of the present invention. 이들 도면에서 볼 수 있는 탑형 패키지(30)는, 디스플레이의 백라이트 등에 적용되는 발광장치로, 전술한 제 1 및 제 2실시예와 거의 동일 구조를 가지며, 단지 기판 상에 리플렉터(31, Reflector)가 장착되어 있다. Column-type package 30 can be seen in these figures, the light emitting device is applied to a backlight of a display, and has approximately the same structure as the first and second embodiments described above, only the reflector (31, Reflector) on a substrate It is mounted. 리플렉터(31)는 발광소자(6)에서 발생되는 발광을 원하는 방향으로 반사시키는 역할을 한다. Reflector 31 serves to reflect the light emission generated by the light emitting element 6 in the desired direction.

이러한 탑형 패키지(30)에도, 상이한 피크파장을 가지는 3개(6, 7, 8) 또는 4개(6, 7, 8, 21)의 발광소자를 실장시킬 수 있다. This column-type package (30) in, and a light emitting element having a peak wavelength of different three (6, 7, 8) or four (6, 7, 8, 21) can be mounted. 그리고 상이한 발광피크를 가지는 복수의 형광체를 선택적으로 혹은 그 배합비율을 달리하여 혼합시킨 파장변환수단을 제공가능하다. And by a plurality of phosphors having different peak emission otherwise selectively or blending ratio it is possible provided that the wavelength conversion means in combination. 이러한 파장변환수단은 리플렉터(31)내에서 각 발광소자(6)상에 도팅되거나 경화성 수지몰딩부(10)에 균일하게 분포된다. The wavelength conversion means reflector 31 Dotting on each light-emitting element 6 in or is distributed uniformly in the curable resin molding part (10).

그리고 도 6은 본 발명의 바람직한 제 4실시예에 따른 싸이드형 패키지의 사시도이다. And Figure 6 is a perspective view of ssayideu type package according to a fourth embodiment of the present invention. 이 도면에서 볼 수 있는 싸이드형 패키지(40)는, 도 6의 탑형 패키지와 거의 동일한 구조를 가지며, 단지 매우 얇은 직사각 형상의 외관을 구비한다. Ssayideu-type package 40 can be seen in this figure, has approximately the same structure as the column-type package of Figure 6, only having the appearance of a very thin, rectangular shape. 구 체적 설명은 도 5와 관련된 상술로 대신한다. Sphere volume description will be replaced by above-described concerning FIG.

한편, 상기 도 1 내지 도 6에 볼 수 있는 실시예들에서는, 열전도성이 우수한 금속성 재료의 기판(1)을 사용할 수 있다. On the other hand, in the embodiment in FIG be seen in Figs. 1 to 6, the thermal conductivity can be used for the substrate 1 is excellent for a metallic material. 이러한 구조는 각 발광소자(6, 7, 8, 21)의 작동시 발생되는 열을 용이하게 방출시킬 수 있어서, 고출력 발광장치를 제공가능하다. Such a structure is possible to be able to easily dissipate heat generated during operation of each of light emitting elements (6, 7, 8, 21), providing a high output light emitting device. 여기에, 별도의 방열판(도시 않음)을 더 부착시키면, 발광소자(6, 7, 8, 21)로부터의 열을 더욱 효과적으로 방출가능하다. Here, if further attached to a separate heat sink (not shown), it is possible to heat from the light emitting element (6, 7, 8, 21) emitted more efficiently.

도 7은 본 발명의 바람직한 제 5실시예에 따른 램프형 패키지의 종단면도이다. 7 is a longitudinal sectional view of a lamp-type package according to a fifth embodiment of the present invention. 본 실시예의 램프형 패키지(50)는, 한 쌍의 리드전극(51, 52)을 구비하며, 일측 리드전극(51)의 상단부에 소자홀더(53)가 형성되어 있다. In this embodiment the lamp-type package (50), and a pair element holder 53 to the upper end portion of provided with a lead electrode (51, 52), one side of the lead electrode 51 is formed. 소자홀더(53)는 컵형상을 가지며, 그 내부에 3개(6, 7, 8) 또는 4개(6, 7, 8, 21)의 발광소자가 실장된다. Element holder 53 has a cup-shaped, 3 therein, is mounted with a light-emitting element (6, 7, 8) or four (6, 7, 8, 21). 각 발광소자(6, 7, 8, 21)는 전술한 실시예들과 마찬가지로, 서로 다른 피크파장을 가진다. Each light-emitting device (6, 7, 8, 21) is, like the embodiments described above, and has a wavelength different peak. 실장된 각 발광소자(6, 7, 8, 21)의 전극은 타측 전극리드(52)와 전도성 와이어(2)로 연결되어 있다. The electrodes of the light emitting elements (6, 7, 8, 21) is mounted is connected to the other electrode lead 52 and the conductive wires (2).

컵형상의 소자홀더(53) 내부에는 일정량의 파장변환수단(3)이 혼합된 에폭시수지(54)가 포팅되어 있다. Within the device holder 53, a cup-shaped has a certain amount of wavelength converting means (3) a mixed epoxy resin (54) is portable. 파장변환수단(3)도 역시 상술한 실시예들과 마찬가지로, 서로 상이한 발광피크를 가지는 형광체들을 선택적으로 혼합하여 구성된다. Wavelength converting means (3), too, like the above embodiments, it is configured to selectively mix into the phosphor with a different emission peaks from each other.

각 형광체들은 또한, 해당 파장의 영역 내에서 특정 발광피크를 가지는 형광체들을 혼합시킨 구성을 가질 수 있음은 물론이다. Each phosphor also, can have a structure in which mixed the phosphor having a specific emission peak in the region of the wavelengths as a matter of course.

그리고 발광소자(6, 7, 또는 6, 7, 8, 21)들과 파장변환수단(3)이 조합된 소자홀더(53)의 외부는 경화성 수지 예를 들면, 에폭시 또는 실리콘 등으로 몰딩(50) 되어 있다. And a light emitting device with the molding (100 (6, 7, or 6, 7, 8, 21) and the outside of the wavelength-conversion means 3, a combination element holder 53 is, for curing resin such as epoxy or silicone, etc. ) it is.

한편, 도 8은 본 발명의 바람직한 제 6실시예에 따른 고출력용 패키지의 개략적 종단면도이다. On the other hand, Figure 8 is a schematic longitudinal sectional view of a package for high power according to a sixth embodiment of the present invention. 이 도면에서 볼 수 있는 고출력용 패키지(60)는 복수개로 분리된 힛싱크(61, 62, Heatsink)에 각각 발광소자(6, 7, 8, 또는 6, 7, 8, 21)들이 실장되어 있고, 발광소자(6, 7)의 상면 및 측면에 파장변환수단(3)이 배치된 하우징(63)을 구비한다. High output package 60 for can be seen in this drawing is the heat sink, separated by a plurality of respective light emitting elements (6, 7, 8, or 6, 7, 8, 21) to (61, 62, Heatsink) are mounted, and , provided with a light emitting device having a housing 63, a wavelength conversion means 3 is placed on the upper surface and side surfaces (6, 7). 외부전원이 공급되는 복수의 리드프레임(64)이 하우징(63)의 외부로 돌출되어 있다. A plurality of lead frame 64 which is an external power supply is protrudes to the outside of the housing (63).

그리고 도 9는 본 발명의 바람직한 제 7실시예에 따른 고출력용 패키지의 개략적 종단면도이다. And Figure 9 is a schematic longitudinal sectional view of a package for high power according to a seventh embodiment of the present invention. 본 실시예(70)에서는, 하우징(73)내에 단일의 힛싱크(71)가 수용되어 부분적으로 외부에 노출되고, 한 쌍의 리드프레임(74)이 외부로 돌출되어 있다. In this embodiment 70, the heat sink 71 of the single-housed in the housing 73 is partially exposed to the outside, and the lead frame 74 of a pair of projecting to the outside. 힛싱크(71)의 상면에 발광소자(6, 7, 8 또는 6, 7, 8, 21 )들이 실장되어 각 리드프레임(74)과 전도성 와이어(도시 않음)를 통해 연결되어 있다. A light emitting element on an upper surface of the heat sink (71, 6, 7, 8 or 6, 7, 8, 21) are mounted are connected via a respective lead frame 74 and a conductive wire (not shown). 파장변환수단(3 또는 13)이 발광소자(6)의 상면 및 측면에 배치되어 있음은 물론이다. In the wavelength conversion means (3 or 13) is disposed on the upper surface and side surfaces of the light-emitting element 6 as a matter of course.

고출력용 패키지인 제 6실시예(60) 및 제 7실시예(70)에서도, 힛싱크(61, 62, 71)와 각 발광소자(6, 7, 8, 21) 사이의 접착부분에 파장변환수단(3)을 개재시킬 수 있음은 물론이다. In the embodiment, as for a high output package of claim 6 (60), and the seventh embodiment (70), the wavelength conversion in the bonding portion between the heat sink (61, 62, 71) and the respective light emitting devices (6, 7, 8, 21) can be interposed a means (3). FIG. 그리고 하우징(63, 73)의 상부에 렌즈를 설치할 수도 있다. And it is also possible to provide the lens at the upper portion of the housing (63, 73). 여기서, 제 7실시예(70)의 패키지는 제 6실시예(60)와 비교하여, 그 높이를 최소화할 수 있는 장점이 있다. Here, the package of Example 7 (70) has the advantage that can be compared to the sixth embodiment (60), minimizing the height.

이러한 고출력용 패키지(60, 70)에서 3개의 발광소자(6, 7, 8)를 사용하는 경우, 피크파장이 440nm 내지 500nm인 제 1발광소자와, 피크파장이 500nm 내지 570nm의 제 2발광소자, 그리고, 피크파장이 570nm 내지 670nm인 제 3발광소자를 선택가능하다. The high output package 60, 70 of the three light emitting elements (6, 7, 8), and the first light emitting device and the peak wave length of 440nm to 500nm, the peak wave length is 500nm or the second light-emitting element of 570nm When using for and, the peak wave length can be selected for the third light-emitting element of 570nm to 670nm.

한편, 4개의 발광소자(6, 7, 8, 21)를 사용하는 경우, 피크파장이 440nm 내지 500nm인 제 1발광소자, 피크파장이 500nm 내지 570nm의 제 2발광소자, 및 피크파장이 570nm 내지 670nm인 제 3발광소자 외에, 피크파장이 410nm 내지 460nm인 제 4발광소자를 선택가능하다. On the other hand, the four case of using a light-emitting device (6, 7, 8, 21), the peak wavelength of 440nm to 500nm of the first light emitting device, a peak wavelength of 500nm to the second light emitting device, and the peak wave length of 570nm 570nm to in addition to the third light emitting device 670nm, the peak wave length can be selected for the fourth light-emitting element of 410nm to 460nm.

이러한 경우, 즉, 3개 또는 4개의 발광소자를 선택한 경우, 파장변환수단은, 피크파장이 450nm 내지 520nm, 500nm 내지 570nm, 및 570nm 내지 680nm인 형광체를 선택적으로 혼합하여 구성가능하다. In this case, that is, three or select the four light-emitting element, the wavelength conversion means, the peak wavelength can be formed by selectively mixing the phosphor of 450nm to 520nm, 500nm to 570nm, and 570nm to 680nm.

한편, 이러한 구성의 고출력용 패키지(60, 70)에서는, 힛싱크(61, 62, 71)와 별도로 혹은 일체의 방열판(도시 않음)를 장착하는 것이 바람직하다. On the other hand, in the high output package 60, 70 for the above-described configuration, it is desirable to mount the heat sink (61, 62, 71) and a (not shown) separate from the heat sink or integrally. 그러면, 높은 입력전원에 의한 각 발광소자의 작동시, 각 발광소자에서 발생되는 열을 효과적으로 방출시킬 수 있다. Then, the operation of each light-emitting device according to the high input power, it is possible to emit heat generated from each light emitting device efficiently. 방열판은 공기대류 방식 혹은 팬 등을 사용한 강제순환방식으로 냉각시킬 수 있음은 물론이다. The heat sink is of course may be cooled by forced circulation system using such an air convection, or fans.

상기한 본 발명의 실시예(60, 70)에 따른 구성에서는, 외부에서 전원이 공급되면, 각 발광소자가 해당 피크파장을 가지는 광을 1차적으로 발생시킨다. In the configuration according to the embodiments 60 and 70 of the present invention, when power is supplied from the outside and generates a light of each light-emitting element having a peak wavelength corresponding to the primary. 그러면, 형광체들이 1차광에 의해 여기되면서, 각기 해당 발광피크의 2차광을 발생시킨다. Then, as this fluorescent material are by primary light, thereby respectively generating a secondary light of the emission peak. 이 때, 각 발광소자에서 발생되는 1차광들과, 각 형광체들에 의해 파장변환된 2차광들이 혼색되어, 해당 가시광선스펙트럼 영역의 색이 구현되는 것이다. At this time, the primary light generated by each light emitting device and a wavelength-converted secondary light by the phosphors have been mixed, to which the spectrum of the visible light region color implementation. 여기서, 형광체의 배합비율을 적절히 조절하면, 사용자가 원하는 색좌표의 색을 용이하 게 구현할 수 있다. Here, by properly adjusting the mixing ratio of the fluorescent material, it is possible to implement user than for the color of the desired color coordinate.

이상에서 볼 수 있는 바와 같이, 본 발명에 따르면, 상이한 발광피크를 가지는 형광체의 배합비율을 적절히 조절하거나 상이한 피크파장의 발광소자를 선택하여, 2,000K 내지 8,000K 또는 10,000K의 상대적으로 고온의 색온도를 가지는 동시에 연색성도 90이상으로 높은 발광장치가 제공된다. As it can be seen from the above, according to the present invention, by appropriately adjusting the mixing ratio of the phosphors having different peak emission or select a light emitting device having a different peak wavelength, 2,000K to 8,000K or relatively high temperature of the color temperature of 10,000K at the same time having a high color rendering property is also provided a light emitting device 90 or higher. 그리고 좁은 발광대역의 발광소자와 형광체를 조합하여 상대적으로 넓은 발광대역의 옐로우-그린 또는 오렌지색을 구현할 수 있기 때문에, 가시광선 스펙트럼영역의 다양한 컬러 및 높은 연색성을 제공가능하다. And yellow of relatively wide bandwidth to the combination of the light emitting element and the phosphor of narrow to wide - it is possible to implement a green or orange, it is possible to provide various colors and high color rendering property in the visible spectral region.

이와 같은 본 발명의 발광장치는, 색온도 및 연색성이 우수하고 사용자가 요구하는 색좌표값의 발광을 용이하게 구현할 수 있기 때문에, 핸드폰이나 노트북, 그리고, 각종 전자제품의 키패드용이나 백라이트용으로 다양하게 채용할 수 있고, 특히, 자동차 및 실내외의 조명용으로 다양하게 응용할 수 있다. Such a light-emitting device of the present invention, color temperature, and employing color rendering property excellently, diverse for the reason, a mobile phone or a laptop, and a keypad or a backlight for various electronic products can be easily implemented to emit light of a color coordinate value requested by the user may, in particular, it is possible for various applications in the automotive and indoor and outdoor illumination.

한편, 상술 및 도시한 실시예들에서는, 2개 또는 3개의 발광소자가 실장된 예에 대해서만 설명하였지만, 청구범위에서 청구하는 바와 같이, 적어도 하나의 발광소자를 각 실시예에 실장시켜 본 발명의 목적 및 효과를 달성할 수 있음은 물론이다. In the other hand, the above-described and illustrated embodiment has been described only for example two or three light emitting elements are mounted, by mounting the at least one light emitting device, as claimed in the claims to the embodiments of the present invention It can achieve the purpose and effect as a matter of course.

Claims (19)

  1. 블루, 그린 및 레드 스펙트럼영역의 1차광을 각각 발생시키는 서로 상이한 발광파장을 가지는 적어도 3개의 발광소자; At least three light-emitting device having a light emission wavelength different from each other to each generate a primary light in the blue, green and red spectral region;
    상기 적어도 3개의 발광소자를 봉지하는 몰딩부; A molding portion for sealing the said at least three light-emitting elements; And
    상기 발광소자들 상부 및 상기 몰딩부 내에 분포되어, 상기 1차광을 가시광선 스펙트럼영역의 2차광으로 파장변환시키는 파장변환수단을 포함하며, Is distributed in the light-emitting element and the upper molding part, comprising a wavelength converting means for converting the wavelength of the primary light into secondary light in the visible spectral region,
    상기 파장변환수단은, Wherein the wavelength conversion means,
    발광피크가 450-520nm인 형광체; The fluorescent emission peak at 450-520nm; 발광피크가 500-570nm인 형광체; The fluorescent emission peak at 500-570nm; 및 발광피크가 570-680nm인 형광체 중 적어도 하나를 조합하여 구성되는 것을 특징으로 하는 발광장치. The light emitting device according to claim, and the emission peak is constituted by combining at least one of the phosphor 570-680nm.
  2. 제 1항에 있어서, According to claim 1,
    상기 적어도 3개의 발광소자는, The at least three light emitting devices,
    피크파장이 440-500nm인 제 1발광소자; A first light emitting element peak wavelength of 440-500nm; 피크파장이 500-570nm인 제 2발광소자; A second light emitting element peak wavelength of 500-570nm; 및 피크파장이 570-670nm인 제 3발광소자; And a third light emitting element whose peak wavelength of 570-670nm; 중에서 선택 가능한 것을 특징으로 하는 발광장치. The light emitting device characterized in that to choose from.
  3. 제1항에 있어서, According to claim 1,
    블루 또는 블루-그린 스펙트럼영역에서 발광하는 적어도 하나의 초기발광소자를 더 포함하는 것을 특징으로 하는 발광장치. The light emitting device according to claim 1, further comprising at least one initial light-emitting device of emitting light in the green spectral region - blue or blue.
  4. 제3항에 있어서, 4. The method of claim 3,
    상기 초기발광소자의 피크파장은 410-460nm인 것을 특징으로 하는 발광장치. Peak wavelength of the primary light-emitting element is a light emitting device, characterized in that 410-460nm.
  5. 제 1항 내지 제 4항 중 어느 한 항에 있어서, The method according to any one of the preceding claims,
    상기 발광소자들과 상기 파장변환수단이 단일의 패키지 내에 구성되는 것을 특징으로 하는 발광장치. The light emitting device which is characterized in that the wavelength conversion means and the light-emitting element which is configured in a single package.
  6. 삭제 delete
  7. 제1항 내지 제4항 중 어느 한 항에 있어서, The method according to any one of the preceding claims,
    상기 파장변환수단은, Wherein the wavelength conversion means,
    상기 발광소자들의 상면, 하부면 및 측면 중 적어도 어느 하나에 배치되며, 전도성 접착제 또는 몰딩부에 분포되어 있는 것을 특징으로 하는 발광장치. The light emitting device characterized in that disposed on at least one of an upper surface, a lower surface and side surfaces of the light-emitting element, is distributed in a conductive adhesive or a molding member.
  8. 삭제 delete
  9. 삭제 delete
  10. 제 5항에 있어서, 6. The method of claim 5,
    상기 단일의 패키지는, Of the single package,
    기판 위에 상기 발광소자들이 실장되고, 상기 각 발광소자 주위에 상기 파장변환수단이 배치되어 있는 것을 특징으로 하는 발광장치. To the light emitting device on a substrate is mounted, the light-emitting device which is characterized in that the wavelength conversion means around each of the light emitting element is disposed.
  11. 제 5항에 있어서, 6. The method of claim 5,
    상기 단일의 패키지는, Of the single package,
    리플렉터가 형성된 기판 위에 상기 발광소자들이 실장되고, 상기 각 발광소자 주위에 상기 파장변환수단이 배치되어 있는 것을 특징으로 하는 발광장치. And a reflector mounted to the light-emitting element formed over a substrate, a light emitting device which is characterized in that the wavelength conversion means around each of the light emitting element is disposed.
  12. 제10항에 있어서, 11. The method of claim 10,
    상기 기판은, The substrate,
    상기 적어도 하나의 발광소자에서 발생되는 열을 방출시키는 금속성 재질인 것을 특징으로 하는 발광장치. The light emitting device characterized in that the metallic material to release the heat generated from the at least one light emitting device.
  13. 제 12항에 있어서, 13. The method of claim 12,
    상기 금속성 기판에 장착되는 방열판;을 더 포함하는 것을 특징으로 하는 발광장치. The light emitting device according to claim 1, further including; heat sink mounted to the metallic substrate.
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  15. 제1항 내지 제4항 중 어느 한 항에 있어서, The method according to any one of the preceding claims,
    상기 몰딩부에 상기 파장변환수단이 골고루 분포되어 있는 것을 특징으로 하는 발광장치. The light emitting device such a manner that the wavelength conversion means are evenly distributed in the molding member.
  16. 제 5항에 있어서, 6. The method of claim 5,
    상기 단일의 패키지는, Of the single package,
    적어도 한 쌍의 전극리드 중 일측에 상기 발광소자들이 실장되고; The light-emitting element to one side of at least a pair of the electrode leads have been mounted; 상기 각 발광소자 주위에 상기 파장변환수단이 배치되며; Wherein said wavelength converting means around each light emitting element is disposed; 상기 발광소자들과 상기 파장변환수단이 몰딩부에 의해 봉지되어 있는 것을 특징으로 하는 발광장치. The light emitting device which is characterized in that the wavelength conversion means and the light-emitting element is sealed by the molding member.
  17. 제 5항에 있어서, 6. The method of claim 5,
    상기 단일의 패키지는, Of the single package,
    상기 발광소자들에서 발생되는 열을 방출하는 힛싱크를 구비하며, 상기 각 발광소자 주위에 상기 파장변환수단이 배치되는 것을 특징으로 하는 발광장치. The provided with a heat sink for emitting heat generated from the light emitting element, the light emitting device, characterized in that the light-emitting element that is disposed around each said wavelength conversion means.
  18. 제 17항에 있어서, 18. The method of claim 17,
    상기 힛싱크의 열을 방출가능하게 장착되는 방열판을 더 포함하는 것을 특징으로 하는 발광장치. The light emitting device further comprises a heat sink that is mounted to dissipate heat of the heat sink.
  19. 제 1항 내지 제 4항 중 어느 한 항에 있어서, The method according to any one of the preceding claims,
    상기 각 발광소자는, 실리콘 카바이드 또는 사파이어 기판 상에 질화물 에피택셜층을 형성시킨 구조를 포함하는 것을 특징으로 하는 발광장치. Each of the light emitting device, a light emitting device comprising a structure that forms a nitride epitaxial layer on a silicon carbide or sapphire substrate.
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JP2007513058A JP2007537590A (en) 2004-05-13 2005-05-03 Emitting device combining Rgb emitting diode and a phosphor
PCT/KR2005/001288 WO2005112137A1 (en) 2004-05-13 2005-05-03 Light emitting device including rgb light emitting diodes and phosphor
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JP2007537590A (en) 2007-12-20
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US20070284563A1 (en) 2007-12-13
US10186642B2 (en) 2019-01-22
US9209162B2 (en) 2015-12-08
EP1766693A4 (en) 2011-08-24
CN100433389C (en) 2008-11-12
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KR20050108816A (en) 2005-11-17
WO2005112137A1 (en) 2005-11-24

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