KR100658700B1 - Light emitting device with RGB diodes and phosphor converter - Google Patents

Light emitting device with RGB diodes and phosphor converter Download PDF

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Publication number
KR100658700B1
KR100658700B1 KR20040034001A KR20040034001A KR100658700B1 KR 100658700 B1 KR100658700 B1 KR 100658700B1 KR 20040034001 A KR20040034001 A KR 20040034001A KR 20040034001 A KR20040034001 A KR 20040034001A KR 100658700 B1 KR100658700 B1 KR 100658700B1
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South Korea
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light emitting
emitting device
light
nm
conversion means
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KR20040034001A
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Korean (ko)
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KR20050108816A (en
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로스 군둘라
이정훈
월터 튜스
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로스 군둘라
서울옵토디바이스주식회사
월터 튜스
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • EFIXED CONSTRUCTIONS
    • E02HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02BHYDRAULIC ENGINEERING
    • E02B3/00Engineering works in connection with control or use of streams, rivers, coasts, or other marine sites; Sealings or joints for engineering works in general
    • E02B3/04Structures or apparatus for, or methods of, protecting banks, coasts, or harbours
    • E02B3/12Revetment of banks, dams, watercourses, or the like, e.g. the sea-floor
    • E02B3/14Preformed blocks or slabs for forming essentially continuous surfaces; Arrangements thereof
    • AHUMAN NECESSITIES
    • A01AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
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    • EFIXED CONSTRUCTIONS
    • E01CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
    • E01FADDITIONAL WORK, SUCH AS EQUIPPING ROADS OR THE CONSTRUCTION OF PLATFORMS, HELICOPTER LANDING STAGES, SIGNS, SNOW FENCES, OR THE LIKE
    • E01F13/00Arrangements for obstructing or restricting traffic, e.g. gates, barricades ; Preventing passage of vehicles of selected category or dimensions
    • E01F13/04Arrangements for obstructing or restricting traffic, e.g. gates, barricades ; Preventing passage of vehicles of selected category or dimensions movable to allow or prevent passage
    • E01F13/042Arrangements for obstructing or restricting traffic, e.g. gates, barricades ; Preventing passage of vehicles of selected category or dimensions movable to allow or prevent passage for controlling access to an individual parking space
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    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201Structure
    • H01L2224/32012Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32013Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/50Wavelength conversion elements

Abstract

The present invention relates to a light emitting device, comprising: at least three light emitting devices having different light emission wavelengths for generating primary light of blue, green, and red spectral regions, respectively; a molding unit encapsulating the at least three light emitting devices; And wavelength conversion means distributed over the light emitting elements and in the molding part to convert the primary light into secondary light in the visible light spectrum region, wherein the wavelength conversion means comprises: a phosphor having an emission peak of 450-520 nm; Phosphors having an emission peak of 500-570 nm; And at least one of phosphors having a light emission peak of 570-680 nm. According to this, there is provided a light emitting device having a color temperature in the range of 2,000K to 8,000K or 10,000K and having a high color rendering property of 90 or more, and which can realize a yellow-green or orange color of a wide light emission band. Since the light emitting device has excellent color temperature and color rendering properties and can easily emit light of color coordinate values required by the user, the light emitting device can be variously used for keypads and backlights of mobile phones, laptops, and various electronic products. In particular, it is possible to apply a variety of applications for automotive and indoor and outdoor lighting.

Description

Light emitting device with RGB diodes and phosphors

1 is a schematic longitudinal sectional view of a light emitting device according to a first preferred embodiment of the present invention, showing a chip-type package having three light emitting elements and wavelength converting means;

2 is a graph showing an emission spectrum of a light emitting device in which an RGB light emitting element and an orange phosphor are combined according to a first embodiment of the present invention;

3 is a graph showing light emission spectra of a light emitting device in which two phosphors and orange phosphors having different emission peaks from an RB light emitting device according to a first embodiment of the present invention are combined;

FIG. 4 is a schematic longitudinal cross-sectional view of a light emitting device according to a second preferred embodiment of the present invention, and is a vertical cross-sectional view of a chip package including four light emitting elements and wavelength converting means;

5 is a schematic longitudinal cross-sectional view of a tower package according to a third preferred embodiment of the present invention;

6 is a perspective view of a side package according to a fourth embodiment of the present invention;

7 is a schematic longitudinal sectional view of a lamp-type package according to a fifth preferred embodiment of the present invention;

8 is a schematic longitudinal sectional view of a high power package according to a sixth preferred embodiment of the present invention; and

9 is a schematic longitudinal cross-sectional view of a high power package according to a seventh preferred embodiment of the present invention.

* Description of the main parts of the drawings *

1 substrate 2 conductive wire

3: wavelength conversion means 5: electrode pattern

6, 7, 8, 21: light emitting element 9: adhesive

10: molding part

11, 20, 30, 40, 50, 60, 70: light emitting device

31 reflector 51, 52 lead electrode

61, 62, 71: heat sink

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly, to a combination of wavelength converting means based on an RGB light emitting element to provide a high color temperature and color rendering property, thereby providing not only application equipment such as home appliances, audio, and communication products. In addition, the present invention relates to a wavelength conversion light emitting device that can be applied to various indoor and outdoor displays, automobiles and lighting.

Light emitting devices emitting white light (hereinafter referred to as LEDs) are Ga (In) N light emitting devices emitting blue of approximately 460nm and YAG: Ce3 + phosphors emitting yellow. Recently produced by combining (BY approach, see US 5,998,925 and EP 862794). However, such a white light emitting device is used as a general light emitting device because of low color temperature (about 6,000 to 8,000) and poor color rendering (about 60 to 70) caused by the absence of a specific color component (mainly a red component). This is limited.

An alternative method may be a method of implementing white by mixing three colors (red, green, blue) (RGB approach), the details of which are disclosed in WO98 / 39805.

However, each of the RGB light emitting devices has a different luminous intensity due to a difference in material or characteristics thereof, and thus, it is difficult to realize all colors in the visible light spectral region by the RGB approach.

That is, the wavelengths of red, green, and blue are sequentially shortened. The shorter the wavelength, the smaller the luminous intensity is. Accordingly, the red and green light emitting devices have a higher luminous intensity than the blue light emitting devices, and more recently, the relative light difference of the light emitting devices has become larger due to manufacturing technology. As a result, even in a BGB approach in which three RGB light emitting elements having different wavelengths are combined, it is difficult to realize light emission of lighting or automobile white, for example, desired by the user.

An object of the present invention, which is conceived in view of such a problem in the prior art, the color temperature is within the range of 2,000 to 8,000 or 10,000 and the color rendering property is excellent to more than 90, such as indoor and outdoor displays as well as applications such as home appliances, audio, and communication products In addition, to provide a wavelength conversion light emitting device that can be easily applied to a variety of products, such as automobiles and lighting.

Another object of the present invention is to provide a light emitting device and a phosphor of a narrow light emitting band by combining a narrow light emitting band which can realize a yellow-green or orange color of a relatively wide light emitting band capable of providing various colors and high color rendering of the visible light spectrum region. A wavelength conversion light emitting device combining a light emitting element and a phosphor is provided.

According to an aspect of the present invention, there is provided a light emitting device comprising: at least three light emitting devices having different light emission wavelengths respectively generating primary light in blue, green, and red spectral regions; a molding part encapsulating the at least three light emitting devices; And wavelength conversion means distributed over the light emitting elements and in the molding part to convert the primary light into secondary light in the visible light spectrum region, wherein the wavelength conversion means comprises: a phosphor having an emission peak of 450-520 nm; Phosphors having an emission peak of 500-570 nm; And a light emitting device configured by combining at least one of phosphors having a light emission peak of 570-680 nm.

Here, the initial light emitting device preferably includes at least one initial light emitting device that emits light in the blue or blue-green spectral region.

Here, at least three initial light emitting devices may include: a first light emitting device having a peak wavelength of 440-500 nm; A second light emitting device having a peak wavelength of 500-570 nm; And a third light emitting device having a peak wavelength of 570-670 nm. You can choose from the configuration. And a fourth light emitting device having a peak wavelength of 410-460 nm.

At this time, the wavelength conversion means, preferably composed of a single phosphor or a combination of a plurality of phosphors, for example, a phosphor having a light emission peak of 450-520nm; Phosphors having an emission peak of 500-570 nm; And phosphors whose emission peaks are 570-680 nm; Combination of at least one of is possible. Each of the phosphors may be configured by mixing at least one of the phosphors in the spectral region.

In the light emitting device of the present invention, it is preferable that the light emitting elements and the wavelength conversion means are constituted in a single package. In this case, the wavelength conversion means may be disposed on at least one of the top, bottom and side surfaces of the light emitting devices, and may be distributed in a conductive adhesive or a molding part.

Meanwhile, in the light emitting device according to the first and second embodiments of the present invention, the at least one light emitting device is mounted on a substrate on the single package, and the wavelength conversion means is disposed around the light emitting device. It can be configured as a chip type.

In the light emitting device according to the third and fourth exemplary embodiments of the present invention, the at least one light emitting device is mounted on a substrate on which a reflector is formed, and the wavelength conversion means is disposed around the light emitting device to form a tower package. It is possible.

In the first to fourth embodiments, when the substrate is formed of a metallic material, heat generated from the light emitting elements can be easily released. Here, if the heat sink further attached to the metallic substrate, the heat radiation effect is further increased.

In the first to fourth embodiments, there is also provided a molding unit for encapsulating the light emitting element and the wavelength conversion means on the substrate; It is preferable to further include, it is possible to distribute the wavelength conversion means evenly in the molding.

In the light emitting device according to the fifth preferred embodiment of the present invention, the at least one light emitting element is mounted on one side of a pair of electrode leads; The wavelength conversion means is arranged around the light emitting element; The light emitting device and the wavelength conversion means may be configured as a lamp package sealed by a molding part.

The light emitting device according to the sixth and seventh exemplary embodiments of the present invention includes a heat sink for dissipating heat generated by the at least one light emitting device, and the wavelength conversion means is disposed around the light emitting device. It can be configured as a high power package. At this time, if the heat sink is further attached to the heat sink, heat can be released more effectively, which is preferable.

In the present invention, a light emitting device having a structure in which a nitride epitaxial layer is formed on a silicon carbide or sapphire substrate can be used.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a schematic longitudinal cross-sectional view of a light emitting device according to a first embodiment of the present invention, in which a chip type package in which three light emitting elements and wavelength converting means are combined is shown. Referring to this drawing, three electrode elements 5 are formed on both end portions of the substrate 1, respectively, and three light emitting elements 6 primarily generating light having different wavelengths on one electrode pattern 5, respectively. , 7, 8) are implemented. Each of the light emitting elements 6, 7 and 8 is mounted on the electrode pattern 5 through the conductive adhesive 9, Paste, and the electrodes of the light emitting elements 6, 7 and the other electrode patterns (not shown). It is connected by the silver conductive wire 2.

The wavelength conversion means 3 is arrange | positioned at the upper surface and the side surface of three light emitting elements 6, 7, 8. The wavelength converting means 3 converts light generated in the light emitting element into secondary light in the visible light spectrum region. The wavelength converting means 3 can be doped to each of the light emitting elements 6, 7, 8 in a form mixed with a curable resin, for example, an epoxy resin or a silicone resin.

The wavelength converting means 3 can also be arranged on the lower surface of each of the light emitting elements 6, 7 and 8 in a form mixed with the conductive adhesive 9.

The upper part of the substrate 1 on which the three light emitting elements 6, 7, 8 are mounted is molded 10 with a curable resin. In the present embodiment (11), the wavelength conversion means (3) is doped to a predetermined thickness on the top and side surfaces of the light emitting elements (6, 7, 8), but is produced in a form that is evenly distributed throughout the curable molding portion (10) Of course it is possible. For this preparation method, see US Pat. No. 6,482,664, filed by the inventor.

On the other hand, the peak wavelength of the first light emitting device 6 of the three light emitting devices 6, 7, 8 is 440nm to 500nm, the peak wavelength of the second light emitting device 7 is 500nm to 570nm, the third light emission The peak wavelength of the device 8 is 570 nm to 670 nm. Here, the first light emitting element 6 may generate light within a purple blue to blue wavelength range, and the second light emitting element 7 may be green to yellow green wavelength. It is possible to generate light in the range, and the third light emitting element 8 is capable of generating light in the greenish yellow to red wavelength range. These first, second and third light emitting elements 6, 7, 8 can use light emitting elements in which a nitride epitaxial layer is formed on a silicon carbide or sapphire substrate, for example.

The wavelength converting means 3 is configured in a form in which a single phosphor or a plurality of phosphors are selectively mixed. That is, at least one phosphor selected from the first phosphor having a light emission peak of 450 nm to 520 nm, the second phosphor having 500 nm to 570 nm, and the third phosphor having 570 nm to 680 nm can be mixed. Here, the first phosphor may generate blue light, the second phosphor may generate green to yellow light, and the third phosphor may generate yellow to red light. Each phosphor may be configured by mixing phosphors having different emission peaks in the spectral region.

As the wavelength converting means 3, for example, a silicate-based phosphor having the formula (Ba, Sr, Ca) x SiO 4: Eu and / or Mn can be used. In this case, for example, the compounding ratio of Ba, Sr, and Ca, the compounding ratio of (Ba, Sr, Ca) x SiO 4: Eu and (Ba, Sr, Ca) x SiO 4: Mn, and / or Ba, Sr, Ca By appropriately adjusting the compounding ratio of Mn, Eu, etc., it is possible to provide a phosphor having an emission peak of 450 nm to 520 nm, 500 nm to 570 nm, or 570 nm to 680 nm. In this manner, the wavelength conversion means 3 can be obtained by controlling the mixing ratio of the phosphors differently.

In the light emitting device 11 having such a configuration, external power is supplied to the first light emitting element 6, the second light emitting element 7, and the third light emitting element 8 via the electrode pattern 5. Then, light having a peak wavelength of 450 nm to 520 nm in the first light emitting device 6, light having a peak wavelength of 500 nm to 570 nm in the second light emitting device 7, and 570 nm having a peak wavelength in the third light emitting device 8. Light from 680 nm to 1 nm is generated first. At this time, the phosphors are excited by the light from each of the light emitting elements 6, 7, and 8, respectively, to generate secondary light having a light emission peak of 450 nm to 520 nm, 500 nm to 570 nm, and / or 570 nm to 680 nm.

As a result, in the light emitting device 11, primary light rays generated by the first, second, and third light emitting elements 6, 7, 8, and secondary light wavelengths converted by the respective phosphors are mixed, The color of the visible light spectrum region is implemented. Here, if the mixing ratio of the phosphor is appropriately adjusted, the user can implement a desired color.

For example, when the light emitting peak includes only the phosphor having 450 nm to 520 nm and the phosphor having 500 nm to 570 nm, secondary light of 570 nm to 680 nm does not occur. In this case, only the primary rays generated by the two light emitting elements and the secondary rays wavelength-converted by the phosphors are mixed, so that different colors in the visible light spectral region are realized. Here, the light emitting device within the peak wavelength range as well as the mixing ratio of the phosphor can be appropriately selected to implement light emission of a desired color coordinate.

On the other hand, when the orange wavelength conversion means is combined with three different wavelength light emitting devices RGB, 6, 7, and 8 according to the present embodiment, a light emitting device having a light emission spectrum as shown in FIG. 2 is provided. The light emitting device of this embodiment can provide a color temperature in the range of 2,500K to 3,000K and color rendering of about 98 degrees. Herein, if the light emitting device and the phosphor are appropriately selected, light emission of color coordinate values required by a user may be easily realized.

For example, if red (R) and blue (B) color light emitting elements are selected, and three kinds of phosphors having different light emission wavelengths, that is, orange, green 1, and green 2 are selected, FIG. As can be seen, the emission spectrum can be obtained. In this case, color temperature of about 3,000K and color rendering of about 96 can be provided.

In addition, the fluorescent substance which comprises a light emitting element and a wavelength conversion means can be selected suitably. For example, FIG. 4 is a schematic longitudinal sectional view of a light emitting device according to a second preferred embodiment of the present invention, in which a chip type package in which four light emitting elements and wavelength conversion means are combined is shown.

The light emitting device of the second embodiment has the same structure as the second embodiment of FIGS. 1 and 2 described above, and only one light emitting element is added. The added fourth light emitting device generates a purple blue light having a peak wavelength of 410 nm to 460 nm.

Even in this configuration, when an external power source is supplied to each light emitting device through the electrode pattern 5, the first, second, third, and fourth light emitting devices 6, 7, 8, and 21 emit light having a corresponding peak wavelength. Each occurs primarily. Then, while excited by the phosphor, part of the primary light is wavelength-converted into secondary light having emission peaks of 450 nm to 520 nm, 500 nm to 570 nm, and 570 nm to 680 nm. At this time, the primary light emitted from each of the light emitting elements 6, 7, 8, and 21 and the secondary light wavelength-converted by the phosphor are mixed to realize light emission in the visible light spectrum region.

Here, each phosphor may be configured by mixing phosphors having different emission peaks within the wavelength range. In addition, by adjusting the mixing ratio of each phosphor appropriately, the user can shift the light emission to the desired color coordinates.

As described above, the light emitting device 20 according to the present embodiment can achieve the same purpose and effect as described with reference to FIGS. 1 and 2. The light emitting devices of the first and second embodiments 11 and 20 have a high color temperature and excellent color rendering properties, and are easy to be used not only for electronic devices such as home appliances, audio and telecommunication products, but also for various displays, indoors and outdoors, especially automobiles and lighting. Can be applied.

Meanwhile, the technical features of the present invention described above with reference to FIGS. 1 to 4 are not limited to chip-type packages but may be applied to various types of LED packages as they are to achieve the same purpose and effect.

Hereinafter, an embodiment in which the present technology is applied to various LED packages will be described with reference to the drawings. Here, the same reference numerals are given to the same names and configurations as those of FIGS. 1 to 4, and the technical principles related to the respective light emitting devices and the wavelength conversion means are equally applied.

5 is a longitudinal cross-sectional view of a tower package according to a third preferred embodiment of the present invention. The top package 30 shown in these figures is a light emitting device that is applied to a backlight of a display, and has almost the same structure as the above-described first and second embodiments, and only a reflector 31 is provided on the substrate. It is installed. The reflector 31 reflects light emitted from the light emitting element 6 in a desired direction.

In the tower package 30, three (6, 7, 8) or four (6, 7, 8, 21) light emitting elements having different peak wavelengths can be mounted. In addition, it is possible to provide a wavelength conversion means in which a plurality of phosphors having different light emission peaks are mixed selectively or in different combinations thereof. Such wavelength converting means are uniformly distributed on the curable resin molding 10 or doped on each light emitting element 6 in the reflector 31.

6 is a perspective view of a side package according to a fourth preferred embodiment of the present invention. The side package 40 seen in this figure has a structure substantially the same as that of the tower package of FIG. 6, and has only a very thin rectangular appearance. The specific description is replaced by the description associated with FIG. 5.

Meanwhile, in the embodiments shown in FIGS. 1 to 6, the substrate 1 of the metallic material having excellent thermal conductivity may be used. This structure can easily release the heat generated during the operation of each of the light emitting elements 6, 7, 8, 21, thereby providing a high output light emitting device. If a separate heat sink (not shown) is further attached thereto, heat from the light emitting elements 6, 7, 8, and 21 can be more effectively discharged.

7 is a longitudinal cross-sectional view of a lamp-type package according to a fifth embodiment of the present invention. The lamp package 50 according to the present embodiment includes a pair of lead electrodes 51 and 52, and an element holder 53 is formed at an upper end of one lead electrode 51. The element holder 53 has a cup shape, and three (6, 7, 8) or four (6, 7, 8, 21) light emitting elements are mounted therein. Each of the light emitting elements 6, 7, 8, and 21 has a different peak wavelength as in the above-described embodiments. The electrodes of each of the mounted light emitting devices 6, 7, 8, and 21 are connected to the other electrode lead 52 by a conductive wire 2.

In the cup-shaped element holder 53, an epoxy resin 54 in which a predetermined amount of wavelength conversion means 3 is mixed is potted. The wavelength converting means 3 is also configured by selectively mixing phosphors having light emission peaks different from each other as in the above-described embodiments.

Each phosphor may also have a configuration in which phosphors having a specific light emission peak are mixed in a region of a corresponding wavelength.

The outside of the device holder 53 in which the light emitting devices 6, 7, or 6, 7, 8, 21 and the wavelength converting means 3 are combined is molded with a curable resin, for example, epoxy or silicon. )

8 is a schematic longitudinal cross-sectional view of a high power package according to a sixth preferred embodiment of the present invention. The high power package 60 shown in this figure has light emitting elements 6, 7, 8, or 6, 7, 8, 21 mounted on a plurality of heat sinks 61 and 62, respectively. And a housing 63 in which the wavelength conversion means 3 is disposed on the top and side surfaces of the light emitting elements 6 and 7. A plurality of lead frames 64 to which external power is supplied protrude out of the housing 63.

9 is a schematic longitudinal cross-sectional view of a high power package according to a seventh preferred embodiment of the present invention. In this embodiment 70, a single heat sink 71 is accommodated in the housing 73 and partially exposed to the outside, and the pair of lead frames 74 protrude outward. Light emitting elements 6, 7, 8 or 6, 7, 8, and 21 are mounted on the top surface of the heat sink 71 and are connected to each lead frame 74 through conductive wires (not shown). Of course, the wavelength conversion means 3 or 13 is disposed on the upper surface and the side surface of the light emitting element 6.

Also in the sixth embodiment 60 and the seventh embodiment 70, which are high output packages, wavelength conversion is performed on the bonding portion between the heat sinks 61, 62, 71 and the respective light emitting elements 6, 7, 8, 21. It goes without saying that the means 3 can be interposed. In addition, a lens may be installed above the housings 63 and 73. Here, the package of the seventh embodiment 70 has an advantage that the height thereof can be minimized as compared with the sixth embodiment 60.

When the three light emitting devices 6, 7, 8 are used in the high output package 60, 70, the first light emitting device having a peak wavelength of 440 nm to 500 nm and the second light emitting device having a peak wavelength of 500 nm to 570 nm In addition, a third light emitting device having a peak wavelength of 570 nm to 670 nm can be selected.

On the other hand, when four light emitting devices 6, 7, 8, and 21 are used, the first light emitting device has a peak wavelength of 440 nm to 500 nm, the second light emitting device having a peak wavelength of 500 nm to 570 nm, and a peak wavelength of 570 nm to In addition to the third light emitting device of 670 nm, the fourth light emitting device having a peak wavelength of 410 nm to 460 nm can be selected.

In this case, namely, when three or four light emitting elements are selected, the wavelength converting means can be configured by selectively mixing phosphors having peak wavelengths of 450 nm to 520 nm, 500 nm to 570 nm, and 570 nm to 680 nm.

On the other hand, in the high output packages 60 and 70 of such a structure, it is preferable to mount the heat sink (not shown) separately from the heat sink 61, 62, 71, or integrally. Then, during operation of each light emitting device by the high input power, it is possible to effectively release the heat generated in each light emitting device. The heat sink can be cooled by forced convection using an air convection method or a fan, of course.

In the configuration according to the embodiments 60 and 70 of the present invention described above, when power is supplied from the outside, each light emitting element primarily generates light having a corresponding peak wavelength. Then, the phosphors are excited by the primary light, respectively, to generate secondary light of the corresponding emission peak. At this time, the primary light generated in each light emitting element and the secondary light wavelength-converted by the respective phosphors are mixed to implement the color of the visible light spectrum region. Here, by appropriately adjusting the compounding ratio of the phosphor, it is possible to easily implement the color of the color coordinates desired by the user.

As can be seen from above, according to the present invention, a relatively high color temperature of 2,000K to 8,000K or 10,000K by appropriately adjusting the compounding ratio of phosphors having different light emission peaks or selecting light emitting elements having different peak wavelengths. At the same time, a light emitting device having a high color rendering property of 90 or more is provided. In addition, since a light emitting device having a narrow emission band and a phosphor may be combined to realize a yellow-green or orange color having a relatively wide emission band, it is possible to provide various colors and high color rendering properties of the visible light spectrum region.

Since the light emitting device of the present invention has excellent color temperature and color rendering properties and can easily emit color coordinate values required by a user, it is widely used for keypads or backlights of mobile phones, notebook computers, and various electronic products. In particular, it can be used in various applications, especially for automotive and indoor and outdoor lighting.

Meanwhile, in the above-described and illustrated embodiments, only an example in which two or three light emitting elements are mounted has been described. However, as claimed in the claims, at least one light emitting element is mounted in each of the embodiments of the present invention. Of course, the purpose and effect can be achieved.

Claims (19)

  1. At least three light emitting devices having different light emission wavelengths for respectively generating primary light in blue, green, and red spectral regions;
    A molding part encapsulating the at least three light emitting elements; And
    And wavelength conversion means disposed on the light emitting elements and in the molding part to convert the primary light into secondary light in a visible light spectral region,
    The wavelength conversion means,
    Phosphors having an emission peak of 450-520 nm; Phosphors having an emission peak of 500-570 nm; And at least one of phosphors having a light emission peak of 570-680 nm.
  2. The method of claim 1,
    The at least three light emitting elements,
    A first light emitting device having a peak wavelength of 440-500 nm; A second light emitting device having a peak wavelength of 500-570 nm; And a third light emitting device having a peak wavelength of 570-670 nm. Light emitting device, characterized in that selectable from.
  3. The method of claim 1,
    Light emitting device further comprises at least one initial light emitting device that emits light in the blue or blue-green spectral region.
  4. The method of claim 3,
    The peak wavelength of the initial light emitting device is a light emitting device, characterized in that 410-460nm.
  5. The method according to any one of claims 1 to 4,
    Wherein said light emitting elements and said wavelength converting means are constituted in a single package.
  6. delete
  7. The method according to any one of claims 1 to 4,
    The wavelength conversion means,
    The light emitting device, characterized in that disposed on at least one of the top, bottom and side surfaces of the light emitting elements, and is distributed in a conductive adhesive or a molding part.
  8. delete
  9. delete
  10. The method of claim 5,
    The single package,
    And a light emitting device mounted on a substrate, wherein the wavelength conversion means is disposed around each light emitting device.
  11. The method of claim 5,
    The single package,
    And the light emitting elements are mounted on a substrate on which a reflector is formed, and the wavelength conversion means is disposed around each of the light emitting elements.
  12. The method of claim 10,
    The substrate,
    Light emitting device, characterized in that the metallic material for emitting heat generated by the at least one light emitting device.
  13. The method of claim 12,
    And a heat sink mounted on the metallic substrate.
  14. delete
  15. The method according to any one of claims 1 to 4,
    And the wavelength conversion means is evenly distributed in the molding portion.
  16. The method of claim 5,
    The single package,
    The light emitting devices are mounted on one side of at least one pair of electrode leads; The wavelength conversion means is disposed around each of the light emitting elements; And the wavelength conversion means is encapsulated by a molding part.
  17. The method of claim 5,
    The single package,
    And a heat sink releasing heat generated from the light emitting elements, wherein the wavelength conversion means is disposed around each light emitting element.
  18. The method of claim 17,
    Light emitting device further comprises a heat sink mounted to release the heat of the heat sink.
  19. The method according to any one of claims 1 to 4,
    Each light emitting device includes a structure in which a nitride epitaxial layer is formed on a silicon carbide or sapphire substrate.
KR20040034001A 2004-05-13 2004-05-13 Light emitting device with RGB diodes and phosphor converter KR100658700B1 (en)

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KR20040034001A KR100658700B1 (en) 2004-05-13 2004-05-13 Light emitting device with RGB diodes and phosphor converter
EP05740759.5A EP1766693B1 (en) 2004-05-13 2005-05-03 Light emitting device including rgb light emitting diodes and phosphor
CNB2005800150173A CN100433389C (en) 2004-05-13 2005-05-03 Light emitting device including RGB light emitting diodes and phosphor
PCT/KR2005/001288 WO2005112137A1 (en) 2004-05-13 2005-05-03 Light emitting device including rgb light emitting diodes and phosphor
JP2007513058A JP2007537590A (en) 2004-05-13 2005-05-03 Light emitting device combining RGB light emitting diode and phosphor
US11/569,060 US9209162B2 (en) 2004-05-13 2005-05-03 Light emitting device including RGB light emitting diodes and phosphor
US14/934,798 US10186642B2 (en) 2004-05-13 2015-11-06 Light emitting device including RGB light emitting diodes and phosphor
US16/232,987 US10672956B2 (en) 2004-05-13 2018-12-26 Light emitting device including RGB light emitting diodes and phosphor
US16/356,475 US20190214534A1 (en) 2004-05-13 2019-03-18 Light emitting device including rgb light emitting diodes and phosphor

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EP (1) EP1766693B1 (en)
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100910942B1 (en) * 2008-03-04 2009-08-05 주식회사 큐레이 Light irradiation device installed with LED light source to enhance cell mediated immune function
KR100935469B1 (en) * 2007-09-28 2010-01-06 주식회사 와이즈파워 Cuttlefish luring lamp
WO2010050670A3 (en) * 2008-10-31 2010-06-24 주식회사 큐레이 Light irradiation apparatus equipped with an led light source for reinforcing cell-mediated immune function
KR20140057827A (en) * 2012-11-05 2014-05-14 엘지전자 주식회사 Light emitting diode lighting apparatus and light emitting diode package
US10247376B2 (en) 2015-12-15 2019-04-02 Hyundai Motor Company Light source module and vehicle headlamp using the same

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2517009A1 (en) 2003-02-26 2004-09-10 Cree, Inc. White light source using emitting diode and phosphor and method of fabrication
KR101148332B1 (en) 2003-04-30 2012-05-25 크리, 인코포레이티드 High powered light emitter packages with compact optics
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
KR100655894B1 (en) * 2004-05-06 2006-12-08 로스 군둘라 Light Emitting Device
KR100665298B1 (en) * 2004-06-10 2007-01-04 로스 군둘라 Light emitting device
KR100665299B1 (en) 2004-06-10 2007-01-04 로스 군둘라 Luminescent material
US8308980B2 (en) * 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
DE102004047763A1 (en) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Multiple LED array
TWI285442B (en) * 2005-08-29 2007-08-11 Gigno Technology Co Ltd Package structure of light emitting diode
KR100643583B1 (en) * 2005-11-10 2006-11-10 루미마이크로 주식회사 Module of multi-color led package using metal pcb, and manufacturing method thereof
KR101258397B1 (en) * 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
KR101055772B1 (en) 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
EP1969633B1 (en) 2005-12-22 2018-08-29 Cree, Inc. Lighting device
KR100771811B1 (en) * 2005-12-27 2007-10-30 삼성전기주식회사 White light emitting device
CN101361411A (en) * 2006-01-20 2009-02-04 富士通株式会社 Chip member mounting construction, mounting method and electronic apparatus
US20090008655A1 (en) * 2006-01-31 2009-01-08 Koninklijke Philips Electronics N.V. White Light Source
KR100735453B1 (en) * 2006-02-22 2007-07-04 삼성전기주식회사 White light emitting device
US7731377B2 (en) * 2006-03-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Backlight device and display device
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
WO2007127029A2 (en) * 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
EP1850383A1 (en) * 2006-04-25 2007-10-31 ILED Photoelectronics Inc. Three wavelength light emitting diode
TWI309480B (en) 2006-07-24 2009-05-01 Everlight Electronics Co Ltd Led packaging structure
KR101258227B1 (en) * 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
EP1923922A1 (en) * 2006-11-15 2008-05-21 Lemnis Lighting IP GmbH Improved led lighting assembly
US7902560B2 (en) * 2006-12-15 2011-03-08 Koninklijke Philips Electronics N.V. Tunable white point light source using a wavelength converting element
DE102006061941A1 (en) * 2006-12-29 2008-07-03 Osram Opto Semiconductors Gmbh Optoelectronic arrangement, has power light emitting diode, where radiation is emitted from power light emitting diode, and adjusting light emitting diode, where another radiation is emitted from adjusting light emitting diode
EP2172984A4 (en) * 2007-07-26 2013-09-11 Panasonic Corp Led lighting device
JP2009065137A (en) * 2007-08-09 2009-03-26 Toshiba Lighting & Technology Corp Light-emitting device
CN101784636B (en) 2007-08-22 2013-06-12 首尔半导体株式会社 Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8143777B2 (en) * 2007-08-23 2012-03-27 Stanley Electric Co., Ltd. LED lighting unit with LEDs and phosphor materials
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor
KR100891810B1 (en) * 2007-11-06 2009-04-07 삼성전기주식회사 White light emitting device
KR101429911B1 (en) * 2007-12-07 2014-08-14 엘지디스플레이 주식회사 light source of liquid crystal display apparatus and back light unit using the same
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
JP2009206246A (en) * 2008-02-27 2009-09-10 Stanley Electric Co Ltd Semiconductor light emitting device
KR100986359B1 (en) * 2008-03-14 2010-10-08 엘지이노텍 주식회사 Light emitting apparatus and display apparatus having the same
KR20090100967A (en) * 2008-03-21 2009-09-24 주식회사 루멘스 Light emitting diode package
DE102008022888A1 (en) * 2008-05-08 2009-11-19 Lok-F Gmbh Lighting device comprising a light source surrounded by solid particles comprises a particle number density gradient in at least one direction away from the light source
TW201007091A (en) * 2008-05-08 2010-02-16 Lok F Gmbh Lamp device
CN101800219B (en) 2009-02-09 2019-09-17 晶元光电股份有限公司 Light-emitting component
DE102009030205A1 (en) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate
KR101055762B1 (en) * 2009-09-01 2011-08-11 서울반도체 주식회사 Light-emitting device employing a light-emitting material having an oxyosilicate light emitter
CN102347431A (en) * 2010-08-05 2012-02-08 展晶科技(深圳)有限公司 Semiconductor light emitting diode component
TW201310710A (en) * 2011-08-18 2013-03-01 Alder Optomechanical Corp Light emitting device
EP2637224B1 (en) 2012-03-09 2019-04-03 Panasonic Intellectual Property Management Co., Ltd. Light emitting device, illumination apparatus and system using same
JP6363061B2 (en) 2012-04-06 2018-07-25 フィリップス ライティング ホールディング ビー ヴィ White light emitting module
EP2650918A1 (en) * 2012-04-10 2013-10-16 Koninklijke Philips N.V. Light emitting module
CN104737313A (en) * 2012-10-10 2015-06-24 克利公司 LED package with multiple element light source and encapsulant having planar surfaces
CN104241262A (en) 2013-06-14 2014-12-24 惠州科锐半导体照明有限公司 Light-emitting device and display device
DE102013214235A1 (en) 2013-07-19 2015-01-22 Osram Gmbh Lighting device with semiconductor light sources and circumferential dam
JP6148395B2 (en) * 2013-10-02 2017-06-14 ジーエルビーテック カンパニー リミテッド High color rendering white light emitting device
CN103996788A (en) * 2014-05-21 2014-08-20 广东威创视讯科技股份有限公司 LED device for display screen and manufacturing method thereof
TW201616682A (en) 2014-10-24 2016-05-01 Edison Opto Corp Light-emitting device
US9853017B2 (en) * 2015-06-05 2017-12-26 Lumens Co., Ltd. Light emitting device package and light emitting device package module
US9791124B2 (en) * 2016-02-23 2017-10-17 MLS Automotive, Inc. Vehicle lighting assembly and method for achieving yellow colored turn signals
US10236425B2 (en) * 2016-03-08 2019-03-19 Glbtech Co., Ltd. White light emitting device having high color rendering
US10017396B1 (en) 2017-04-28 2018-07-10 Eie Materials, Inc. Phosphors with narrow green emission
US10056530B1 (en) * 2017-07-31 2018-08-21 Eie Materials, Inc. Phosphor-converted white light emitting diodes having narrow-band green phosphors
US10177287B1 (en) 2017-09-19 2019-01-08 Eie Materials, Inc. Gamut broadened displays with narrow band green phosphors
CN108183099A (en) * 2017-12-21 2018-06-19 厦门市三安光电科技有限公司 A kind of White-light LED package structure and white light source system
US10174242B1 (en) 2018-05-17 2019-01-08 Eie Materials, Inc. Coated thioaluminate phosphor particles
US10236422B1 (en) 2018-05-17 2019-03-19 Eie Materials, Inc. Phosphors with narrow green emission

Family Cites Families (161)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2110162A (en) * 1938-03-08 Luminescent material
US2402760A (en) * 1942-06-27 1946-06-25 Rca Corp Luminescent material
US2617773A (en) 1948-09-10 1952-11-11 Westinghouse Electric Corp Lead activated calcium tungstate phosphor
US2570136A (en) * 1949-12-22 1951-10-02 Du Pont Infrared phosphors
US2719128A (en) 1950-06-21 1955-09-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Luminescent material
US2780600A (en) 1955-01-24 1957-02-05 Westinghouse Electric Corp Lead-and manganese-activated cadmium-sodium fluorophosphate phosphor
US3143510A (en) 1959-06-12 1964-08-04 Philips Corp Copper and tin activated orthophosphate phosphors
US3598752A (en) * 1967-04-14 1971-08-10 Itt Ultraviolet emitting cathodoluminescent material
JPS476258Y1 (en) 1968-05-17 1972-03-04
BE754982A (en) 1969-08-21 1971-02-01 Westinghouse Electric Corp Silicogermanate zinc-magnesium improves
NL7013516A (en) 1970-09-12 1972-03-14
US3644212A (en) 1971-02-18 1972-02-22 Westinghouse Electric Corp Zinc-magnesium silico-germanate phosphor composition and method of preparing same
JPS4938994A (en) 1972-08-19 1974-04-11
US3893939A (en) 1973-01-04 1975-07-08 Us Energy Activated phosphors having matrices of yttrium-transition metal compound
US3905911A (en) 1974-09-25 1975-09-16 Gte Sylvania Inc Copper activated hafnium phosphate phosphors and method of making
NL7807274A (en) 1978-03-10 1979-09-12 Philips Nv A luminescent substance, a luminescent screen provided with such a substance, and low-pressure mercury vapor discharge lamp provided with such a screen.
JPS619996B2 (en) 1979-04-06 1986-03-27 Dainippon Toryo Kk
NL8201943A (en) 1982-05-12 1983-12-01 Philips Nv Luminescent screen.
JPS61258892A (en) 1985-05-13 1986-11-17 Matsushita Electronics Corp Fluorescent lamp
JPS62197487A (en) 1986-02-25 1987-09-01 Hitachi Ltd Production of phosphor
JPS62218476A (en) 1986-03-18 1987-09-25 Murata Mfg Co Ltd Thin-film el element
JPH07110941B2 (en) 1987-10-19 1995-11-29 化成オプトニクス株式会社 Luminescent composition
US4972086A (en) 1989-02-03 1990-11-20 Eastman Kodak Company X-ray intensifying screen including a titanium activated hafnium dioxide phosphor containing erbium to reduce afterglow
EP0382295B1 (en) 1989-02-07 1993-08-04 AGFA-GEVAERT naamloze vennootschap Reproduction of x-ray images with photostimulable phosphor
JPH0578659A (en) 1991-09-18 1993-03-30 Toshiba Corp Fluorescent substance and fluorescent lamp
US5518808A (en) 1992-12-18 1996-05-21 E. I. Du Pont De Nemours And Company Luminescent materials prepared by coating luminescent compositions onto substrate particles
KR940019586A (en) * 1993-02-04 1994-09-14 휴고 라이히무트, 한스 블뢰흐레 Elevator display element
TW353678B (en) 1994-08-17 1999-03-01 Mitsubishi Chem Corp Aluminate phosphor
US5472636A (en) 1994-09-14 1995-12-05 Osram Sylvania Inc. Method of preparing manganese and lead coactivated calcium silicate phosphor
CN1102631C (en) 1995-04-14 2003-03-05 株式会社东京化学研究所 Phosphor with afterglow characteristic
JPH0940946A (en) 1995-07-28 1997-02-10 Tokyo Kagaku Kenkyusho:Kk Molded phosphor having afterglow characteristics
DE19539315A1 (en) 1995-10-23 1997-04-24 Hoechst Ag UV-active regenerated cellulose fibers
JPH09153644A (en) 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd Group-iii nitride semiconductor display device
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US5965192A (en) 1996-09-03 1999-10-12 Advanced Vision Technologies, Inc. Processes for oxide based phosphors
DE19638667C2 (en) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component with luminescence conversion element
DE69627334T2 (en) 1996-10-10 2003-12-11 Agfa Gevaert Nv New photo-stimulable phosphor
US5853614A (en) * 1996-12-17 1998-12-29 Beijing Hongye Coating Materials Company Long decay luminescent material
WO1998039805A1 (en) 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. White light-emitting diode
ES2230623T3 (en) 1997-03-26 2005-05-01 Zhiguo Xiao Silicate luminiscent material with long-term postluminiscence and manufacturing procedure of the same.
JP2992254B2 (en) 1997-08-11 1999-12-20 ケミテック株式会社 Method for producing high-speed excitation / high-brightness / low-attenuation luminescent material
CN1085719C (en) 1997-11-21 2002-05-29 中国科学院长春应用化学研究所 Preparation of fluorescent powder for dysprosium and lead dosed high voltage mercury lamp
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
JPH11177143A (en) 1997-12-16 1999-07-02 Toshiba Lighting & Technology Corp Light source for illumination employing led and illuminator
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JP2907286B1 (en) 1998-06-26 1999-06-21 サンケン電気株式会社 Resin-sealed semiconductor light emitting device having fluorescent cover
ES2299260T5 (en) 1998-09-28 2011-12-20 Koninklijke Philips Electronics N.V. Lighting system.
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
WO2000079605A1 (en) * 1999-06-23 2000-12-28 Citizen Electronics Co., Ltd. Light emitting diode
KR100355456B1 (en) 1999-07-30 2002-10-11 한국전자통신연구원 A red phosphor for fluorescent display and a preparation method thereof
JP2001144331A (en) * 1999-09-02 2001-05-25 Toyoda Gosei Co Ltd Light-emitting device
US6686691B1 (en) 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
TWI272299B (en) 1999-10-06 2007-02-01 Sumitomo Chemical Co A process for producing aluminate-based phosphor
JP2001115157A (en) 1999-10-15 2001-04-24 Nippon Sheet Glass Co Ltd Phosphor and its production method
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6513949B1 (en) 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
JP3809760B2 (en) 2000-02-18 2006-08-16 日亜化学工業株式会社 Light emitting diode
GB0012377D0 (en) 2000-05-22 2000-07-12 Isis Innovation Oxide based phosphors
JP2002057376A (en) 2000-05-31 2002-02-22 Matsushita Electric Ind Co Ltd Led lamp
TW574343B (en) 2000-06-27 2004-02-01 Sumitomo Chemical Co Method of producing aluminate fluorescent substance, a fluorescent substance and a device containing a fluorescent substance
US6737801B2 (en) * 2000-06-28 2004-05-18 The Fox Group, Inc. Integrated color LED chip
JP4432275B2 (en) 2000-07-13 2010-03-17 パナソニック電工株式会社 Light source device
TW459403B (en) 2000-07-28 2001-10-11 Lee Jeong Hoon White light-emitting diode
DE10036940A1 (en) * 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Luminescence conversion LED
JP2002050795A (en) * 2000-07-31 2002-02-15 Kansai Tlo Kk InGaN LIGHT-EMITTING DIODE
JP4396016B2 (en) 2000-09-21 2010-01-13 三菱化学株式会社 Aluminate phosphor, phosphor paste composition, and vacuum ultraviolet light-excited light emitting device
EP1338555A4 (en) * 2000-10-17 2004-12-08 Sharp Kk Oxide material, method for preparing oxide thin film and element using said material
KR100392363B1 (en) 2000-12-26 2003-07-22 한국전자통신연구원 Phosphor and method for fabricating the same
AT410266B (en) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Light source with a light-emitting element
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
CN1187428C (en) 2001-02-12 2005-02-02 湖南师范大学 Single-base dual-energy light-transforming agent and its preparing prcess and application
JP2002254273A (en) 2001-02-23 2002-09-10 Mori Seiki Co Ltd Control device for cutting tool, cutting tool and its cutting method
JP3783572B2 (en) 2001-03-05 2006-06-07 日亜化学工業株式会社 Light emitting device
JP4101468B2 (en) 2001-04-09 2008-06-18 株式会社東芝 Method for manufacturing light emitting device
US7019335B2 (en) 2001-04-17 2006-03-28 Nichia Corporation Light-emitting apparatus
KR100419611B1 (en) 2001-05-24 2004-02-25 삼성전기주식회사 A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor
JP4055373B2 (en) 2001-05-31 2008-03-05 日亜化学工業株式会社 Method for manufacturing light emitting device
JP2002368277A (en) 2001-06-05 2002-12-20 Rohm Co Ltd Chip semiconductor light-emitting device
US20030030063A1 (en) * 2001-07-27 2003-02-13 Krzysztof Sosniak Mixed color leds for auto vanity mirrors and other applications where color differentiation is critical
DE10137042A1 (en) * 2001-07-31 2003-02-20 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Planar light source based on LED
US6737681B2 (en) 2001-08-22 2004-05-18 Nichia Corporation Light emitting device with fluorescent member excited by semiconductor light emitting element
JP4032682B2 (en) 2001-08-28 2008-01-16 三菱化学株式会社 Phosphor
JP4045781B2 (en) * 2001-08-28 2008-02-13 松下電工株式会社 Light emitting device
TW595012B (en) 2001-09-03 2004-06-21 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device
US6770398B1 (en) 2001-09-11 2004-08-03 The United States Of America As Represented By The Secretary Of The Army Potassium stabilized manganese dioxide for lithium rechargeable batteries
JPWO2003030274A1 (en) 2001-09-27 2005-01-20 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JPWO2003034508A1 (en) 2001-10-12 2005-02-03 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP2003133595A (en) 2001-10-24 2003-05-09 Seiwa Electric Mfg Co Ltd Light emitting diode lamp, red phosphor used for the same and filter used for the same
CN1152114C (en) 2001-10-26 2004-06-02 中国科学院长春应用化学研究所 Prepn of bluish voilet or green Si-Al-Zn system long-perisistance luminescent material
JP2003152229A (en) 2001-11-16 2003-05-23 Rohm Co Ltd Semiconductor light emitting device
CN1266776C (en) 2002-01-21 2006-07-26 诠兴开发科技股份有限公司 Method for making white colore LED
TWI243339B (en) * 2002-03-19 2005-11-11 Casio Computer Co Ltd Image reading apparatus and drive control method
US7642708B2 (en) * 2002-03-25 2010-01-05 Koninklijke Philips Electronics N.V. Tri-color white light led lamp
JP3822545B2 (en) 2002-04-12 2006-09-20 ナイトライド・セミコンダクター株式会社 Light emitting device
JP2003306674A (en) 2002-04-15 2003-10-31 Sumitomo Chem Co Ltd Fluorescent material for white led, and white led using the same
JP2003321675A (en) 2002-04-26 2003-11-14 Nichia Chem Ind Ltd Nitride fluorophor and method for producing the same
TW546854B (en) 2002-05-21 2003-08-11 Harvatek Corp White light emitting device
DE10233050B4 (en) 2002-07-19 2012-06-14 Osram Opto Semiconductors Gmbh LED-based light source for generating light using the color mixing principle
JP4280038B2 (en) 2002-08-05 2009-06-17 日亜化学工業株式会社 Light emitting device
JP2004071807A (en) * 2002-08-06 2004-03-04 Sharp Corp Lighting device, camera system and portable apparatus
JP3978102B2 (en) 2002-08-29 2007-09-19 岡谷電機産業株式会社 Light emitting diode
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US7244965B2 (en) * 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
JP4263453B2 (en) 2002-09-25 2009-05-13 パナソニック株式会社 Inorganic oxide and light emitting device using the same
JP2004127988A (en) 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd White light emitting device
WO2004036962A1 (en) 2002-10-14 2004-04-29 Philips Intellectual Property & Standards Gmbh Light-emitting device comprising an eu(ii)-activated phosphor
JP2004134699A (en) 2002-10-15 2004-04-30 Sanken Electric Co Ltd Light emitting device
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
JP3929885B2 (en) 2002-12-06 2007-06-13 シーケーディ株式会社 LED lighting apparatus, LED lighting apparatus manufacturing apparatus, and LED lighting apparatus manufacturing method
DE10259946A1 (en) 2002-12-20 2004-07-15 Roth, geb. Henke, Gundula, Dipl.-Chem. Dr.rer.nat. Phosphors for converting the ultraviolet or blue emission of a light-emitting element into visible white radiation with very high color rendering
KR100499079B1 (en) 2003-02-10 2005-07-01 엘지전자 주식회사 Oxide green fluorescent material
US7320531B2 (en) * 2003-03-28 2008-01-22 Philips Lumileds Lighting Company, Llc Multi-colored LED array with improved brightness profile and color uniformity
US7045826B2 (en) 2003-03-28 2006-05-16 Korea Research Institute Of Chemical Technology Strontium silicate-based phosphor, fabrication method thereof, and LED using the phosphor
US20040206970A1 (en) 2003-04-16 2004-10-21 Martin Paul S. Alternating current light emitting device
TW200501456A (en) 2003-04-23 2005-01-01 Hoya Corp Light-emitting diode
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US6982045B2 (en) 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
TWI307945B (en) 2003-07-15 2009-03-21 Macroblock Inc A light-emitting semiconductor device packaged with light-emitting diodes and current-driving integrated circuits
US6987353B2 (en) 2003-08-02 2006-01-17 Phosphortech Corporation Light emitting device having sulfoselenide fluorescent phosphor
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
JP4761734B2 (en) 2003-08-15 2011-08-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP2005101458A (en) 2003-09-26 2005-04-14 Sharp Corp Semiconductor light emitting device
TWI263356B (en) 2003-11-27 2006-10-01 Kuen-Juei Li Light-emitting device
US7066623B2 (en) * 2003-12-19 2006-06-27 Soo Ghee Lee Method and apparatus for producing untainted white light using off-white light emitting diodes
KR100586944B1 (en) 2003-12-26 2006-06-07 삼성전기주식회사 High power light emitting diode package and method of producing the same
KR20050070349A (en) 2003-12-30 2005-07-07 서울옵토디바이스주식회사 Fabrication of many colors light emitting diode
US7608200B2 (en) * 2004-01-16 2009-10-27 Mitsubishi Chemical Corporation Phosphor and including the same, light emitting apparatus, illuminating apparatus and image display
US7189340B2 (en) * 2004-02-12 2007-03-13 Mitsubishi Chemical Corporation Phosphor, light emitting device using phosphor, and display and lighting system using light emitting device
KR100605211B1 (en) 2004-04-07 2006-07-31 엘지이노텍 주식회사 Phosphor and white led using the same
KR100655894B1 (en) 2004-05-06 2006-12-08 로스 군둘라 Light Emitting Device
JP2006012770A (en) * 2004-05-27 2006-01-12 Hitachi Ltd Light-emitting device and image display device using this light-emitting device
RU2359362C2 (en) 2004-12-22 2009-06-20 Сеул Семикондактор Ко., Лтд. Light-emitting device
KR100665298B1 (en) 2004-06-10 2007-01-04 로스 군둘라 Light emitting device
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665299B1 (en) 2004-06-10 2007-01-04 로스 군둘라 Luminescent material
KR20060004056A (en) 2004-07-08 2006-01-12 주식회사 지이원 Used a fiber of waste and cotten of waster the fiber ball method of production
US7601276B2 (en) 2004-08-04 2009-10-13 Intematix Corporation Two-phase silicate-based yellow phosphor
JP5081370B2 (en) 2004-08-31 2012-11-28 日亜化学工業株式会社 Light emitting device
CN101010413B (en) * 2004-09-07 2010-08-25 住友化学株式会社 Phosphor, phosphor paste and light-emitting device
KR20040088418A (en) 2004-09-15 2004-10-16 박재익 Tri-color white light emitted diode
JP4880892B2 (en) 2004-10-18 2012-02-22 東芝マテリアル株式会社 Phosphor, phosphor manufacturing method, and light emitting device using the same
JP4836429B2 (en) 2004-10-18 2011-12-14 東芝マテリアル株式会社 Phosphor and light emitting device using the same
JP2006173433A (en) 2004-12-17 2006-06-29 Ube Ind Ltd Light transforming ceramic compound, and light emitting device using the same
US7138770B2 (en) * 2004-12-27 2006-11-21 Top Union Globaltek Inc. LED driving circuit
US7541728B2 (en) * 2005-01-14 2009-06-02 Intematix Corporation Display device with aluminate-based green phosphors
DE102005005263A1 (en) 2005-02-04 2006-08-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Yellow emitting phosphor and light source with such phosphor
JP4868499B2 (en) * 2005-04-08 2012-02-01 独立行政法人産業技術総合研究所 Stress luminescent material, manufacturing method thereof, composite material including the same, and matrix structure of stress luminescent material
KR100697822B1 (en) 2005-06-23 2007-03-20 한국화학연구원 Strontium magnesium silicate blue phosphor for UV LED and preparation method thereby
KR100927154B1 (en) 2005-08-03 2009-11-18 인터매틱스 코포레이션 Silicate-based orange phosphors
US8531406B2 (en) 2005-09-12 2013-09-10 Nitto Denko Corporation Transparent conductive film, electrode sheet for use in touch panel, and touch panel
KR100666211B1 (en) 2005-09-22 2007-01-09 한국화학연구원 Composition of silicates phosphor for uv and long-wavelength excitation
KR101258397B1 (en) 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
KR101055772B1 (en) 2005-12-15 2011-08-11 서울반도체 주식회사 Light emitting device
KR100626272B1 (en) 2006-01-20 2006-09-20 씨엠에스테크놀로지(주) Barium silicate phosphor, manufacturing method of the same, and white light emitting device and emitting film using the same
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 Light emitting device
KR20080046789A (en) 2006-11-23 2008-05-28 인터매틱스 코포레이션 Two-phase silicated-based yeoolw phosphor
KR101396588B1 (en) * 2007-03-19 2014-05-20 서울반도체 주식회사 Light emitting apparatus having various color temperature
CN101784636B (en) 2007-08-22 2013-06-12 首尔半导体株式会社 Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
WO2009028818A2 (en) 2007-08-28 2009-03-05 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
KR101055769B1 (en) * 2007-08-28 2011-08-11 서울반도체 주식회사 Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor

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Publication number Priority date Publication date Assignee Title
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WO2010050670A3 (en) * 2008-10-31 2010-06-24 주식회사 큐레이 Light irradiation apparatus equipped with an led light source for reinforcing cell-mediated immune function
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