CN1266776C - Method for making white colore LED - Google Patents
Method for making white colore LED Download PDFInfo
- Publication number
- CN1266776C CN1266776C CNB021020760A CN02102076A CN1266776C CN 1266776 C CN1266776 C CN 1266776C CN B021020760 A CNB021020760 A CN B021020760A CN 02102076 A CN02102076 A CN 02102076A CN 1266776 C CN1266776 C CN 1266776C
- Authority
- CN
- China
- Prior art keywords
- green
- purple
- white light
- blue
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 3
- 229910017639 MgSi Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000003086 colorant Substances 0.000 abstract description 11
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 19
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention relates to a method for a preparing white light LED which is composed of a packaging substrate, purple light LED crystal grains and mixed fluorescent powder of three colors of red, blue and green. The present invention utilizes purple light generated by the purple light LED crystal grains to excite fluorescent powder layers on the surfaces of the crystal grains to generate mixed white light with three wavelengths of red, blue and green. The present invention is an optimal choice for generating high brightness three wavelengths by a single grain white light LED.
Description
Technical field
The present invention relates to a kind of manufacturing method for LED, relate in particular to a kind of manufacture method of white light-emitting diode.
Background technology
At present the manufacture method of single white light LEDs has two kinds, and one for adding the yellow phosphor powder mode of YAG with blue light crystal grain, and the main producer is a Japanese Ri Ya chemical company, and its Taiwan patent announcement number is 383, No. 508.
Another kind of is to add red, blue, green three primary colors phosphor powder mode with ultraviolet light crystal grain to make the generation white light be created the Taiwan patent announcement the 385th, No. 063 by the inventor.
More than first kind of mode add yellow phosphor powder with blue dies; its maximum shortcoming is that the white light wavelength that is sent has only two wavelength; have only blue light and gold-tinted; therefore the white light that comes out of made is only applicable to indication and uses in this way; still difficulty reaches real standard illuminants purposes or LCD colored backlight source usefulness; another shortcoming be since yellow phosphor powder precisely quantitatively control be difficult for, and the time regular meeting cause photochromic inclined to one side indigo plant or yellow partially phenomenon.
The second way produces the three-wavelength white light with ultraviolet excitation three primary colors phosphor powder, should optimal mode, but with regard to real face, still there are not high efficiency, the appearance of high-power ultraviolet leds crystal grain at present, with present ultraviolet leds with regard to regard to Japanese Ri Ya chemical company, it produces wavelength 371nm power and also has only about 2-3mw, Japan Toyota Synesis Company produces wavelength 380nm power also to be had only about 2-3mw, and its reason that is difficult to make high power ultraviolet leds crystal grain is the influence that is subjected to material behavior and processing procedure.
Another shortcoming is not for still there being at present the encapsulation transparent resin of ultraviolet light, and most of organic resin all can absorb ultraviolet light, and causes resin to be subjected to UV-irradiation to produce degradation phenomena, will influence life-span and the quality of LED.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of white light-emitting diode (LED), the purple light that utilizes purple LED crystal grain to produce excites at its surperficial fluorescent bisque, and produces red, blue, green three-wavelength mixed white light,
For achieving the above object, the manufacture method of a kind of white light emitting diode provided by the invention, by base plate for packaging or support, purple-light LED (LED) crystal grain and one has red, blue, the phosphor powder that green three primary colors are mixed is formed, purple LED crystal grain is fixed on base plate for packaging or the support, and connection electrode also will have red, blue, the phosphor powder that green three primary colors are mixed, directly or indirectly be coated on the purple LED grain surface to apply or to put the glue mode, the purple light that utilizes purple LED crystal grain to produce, excite at its surperficial fluorescent bisque, make generation red, blue, the white light that green three-wavelength mixes.
Wherein the purple light scope that produced of purple LED crystal grain is wavelength 390nm-410nm.
Wherein base plate for packaging can be printed circuit board (PCB) (PCB) or ceramic substrate or silicon substrate or metal substrate.
The phosphor powder that wherein has red, blue, green three mixture of colours, wherein:
Red fluorescent powder is Y
2O
2S:Eu, Gd
The green fluorescent powder is ZnS:Cu, Al or Ca
2MgSi
2O
7: Cl
The blue-fluorescence powder is BaMgAl
10O
17: Eu
Or (Sr, Ca, BaMg)
10(PO
4)
6Cl
2: Eu
Description of drawings
Exemplify embodiment below and accompanying drawings is as follows:
Fig. 1 is the structure chart of the support method for packing of conventional white light LED.
Fig. 2 is the support manufacturing method structure chart of white light LEDs of the present invention.
Fig. 3 is another structure chart of support manufacturing method of white light LEDs of the present invention.
Fig. 4 is the die casting manufacture method structure chart of white light LEDs of the present invention.
Fig. 5 is the spectrogram of white light LEDs of the present invention.
Embodiment
See also shown in Figure 2, at first with redness, blueness, green three primary colors phosphor powder 2, enable to mix with purple light excited generation white light as mixing preparation with proper proportion, wherein white light is again because of the customer demand difference has the variation of requirement colour temperature from 3000-8000K, can also allocate the ratio of red, blue, green three primary colors phosphor powder 2 and reaches.
With purple LED crystal grain 1, be fixedly arranged on package support 3 or the base plate for packaging 9, and connect LED crystal grain 1 and stent electrode 5 (or base electrode 10) and package support 3 (or encapsulation base 9) respectively with lead 4, and the three primary colors phosphor powder 2 direct or indirect (shown in Fig. 3,4) that mixes is coated on purple LED crystal grain 1 surface, utilize the purple light excited of purple LED crystal grain 1 generation at its surperficial three primary colors phosphor powder 2, make to produce the white light that red, blue, green three ripples mix, shown in Fig. 5 spectrogram.
The three primary colors phosphor powder 2 red Y that adopt of the present invention
2O
2S:Eu, Gd; The green fluorescent powder is ZnS:Cu, Al or Ca
2MgSi
2O
7: Cl; The blue-fluorescence powder is BaMgAl
10O
17: Eu or (Sr, Ca, BaMg)
10(PO
4)
6Cl
2: Eu.
Other available phosphor powders are still arranged except above-mentioned phosphor powder, but do not represent the present invention only to limit the use of above-mentioned phosphor powder, also comprised the phosphor powder material that other can be excited by violet wavelength (390-410nm) scope.
The research of past phosphor powder is all based on 254nm or 365nm exciting light, rare my research produces white light with purple light excited source, because of high power purple LED crystal grain 1 for just being developed in this year, excite phosphor powder to produce white light with high power purple LED crystal grain 1, still at first create the method for proposition for the present invention, though it may not be following main stream approach, single selection that white light LEDs produces high brightness three-wavelength the best at present.
Claims (2)
1, a kind of manufacture method of white light emitting diode, comprise a kind of purple LED crystal grain and one can be subjected to this LED crystal grain luminous can excite comprise redness, green, blue mixed fluorescent powder, this contains redness, green, blue mixed fluorescent powder and absorbs above-mentioned purple LED purple light that crystal grain sends, inspire redness, green, blue wavelength light, mix with the purple light that original purple LED crystal grain is sent again, can produce white light LEDs, above-mentioned redness, green, blue colour fluorescent powder are:
Red fluorescent powder is Y
2O
2S:Eu, Gd
The green fluorescent powder is ZnS:Cu, Al or Ca
2MgSi
2O
7: Cl
The blue-fluorescence powder is BaMgAl
10O
17: Eu
Or (Sr, Ca, BaMg)
10(PO
4)
6Cl
2: Eu.
2, the manufacture method of white light emitting diode as claimed in claim 1 is characterized in that, wherein the purple light scope that produced of purple LED crystal grain is that wavelength is 390nm-410nm.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021020760A CN1266776C (en) | 2002-01-21 | 2002-01-21 | Method for making white colore LED |
| JP2003005579A JP2003224306A (en) | 2002-01-21 | 2003-01-14 | Manufacturing method for white light emitting diode |
| DE10301169A DE10301169A1 (en) | 2002-01-21 | 2003-01-15 | Production of LEDs emitting white light comprises mounting a UV light LED chip on an electrode, and directly or indirectly applying RGB-mixed phosphor powder on the surface of the chip |
| KR1020030003705A KR100702297B1 (en) | 2002-01-21 | 2003-01-20 | Method for manufacturing a white led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021020760A CN1266776C (en) | 2002-01-21 | 2002-01-21 | Method for making white colore LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1434521A CN1434521A (en) | 2003-08-06 |
| CN1266776C true CN1266776C (en) | 2006-07-26 |
Family
ID=4739651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021020760A Expired - Fee Related CN1266776C (en) | 2002-01-21 | 2002-01-21 | Method for making white colore LED |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2003224306A (en) |
| KR (1) | KR100702297B1 (en) |
| CN (1) | CN1266776C (en) |
| DE (1) | DE10301169A1 (en) |
Families Citing this family (41)
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| US7800121B2 (en) | 2002-08-30 | 2010-09-21 | Lumination Llc | Light emitting diode component |
| US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
| US7224000B2 (en) | 2002-08-30 | 2007-05-29 | Lumination, Llc | Light emitting diode component |
| CN100383988C (en) * | 2003-08-20 | 2008-04-23 | 刘行仁 | White light emitting diode and phosphor for light conversion thereof |
| DE10345516B4 (en) * | 2003-09-30 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Electromagnetic radiation emitting semiconductor device and method for its production |
| JP2005209795A (en) * | 2004-01-21 | 2005-08-04 | Koito Mfg Co Ltd | Light emitting module and lighting tool |
| CN100341163C (en) * | 2004-03-29 | 2007-10-03 | 宏齐科技股份有限公司 | Weight-light ligh-emitting diode unit |
| KR100655894B1 (en) | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Light Emitting Device |
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| KR100665299B1 (en) | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Luminescent material |
| US8308980B2 (en) | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
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| RU2467051C2 (en) | 2007-08-22 | 2012-11-20 | Сеул Семикондактор Ко., Лтд. | Luminophores based on nonstoichiometric tetragonal silicates of copper and alkali-earth metal and method for production thereof |
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| KR101055762B1 (en) | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device employing a light-emitting material having an oxyosilicate light emitter |
| US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
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| EP3313960B1 (en) | 2015-06-24 | 2019-10-23 | Seaborough IP I B.V. | Phosphor ceramic |
| KR20170017315A (en) | 2015-08-06 | 2017-02-15 | 정수동 | LED light source for implementing a high S/P ratio |
| CN107384383A (en) * | 2017-08-18 | 2017-11-24 | 苏州轻光材料科技有限公司 | A kind of compound fluorescent material of UV excited white lights LED |
| KR20170003082U (en) | 2017-08-21 | 2017-09-01 | 정수동 | Smt led light source with improved s/p ratio |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001144331A (en) * | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | Light-emitting device |
-
2002
- 2002-01-21 CN CNB021020760A patent/CN1266776C/en not_active Expired - Fee Related
-
2003
- 2003-01-14 JP JP2003005579A patent/JP2003224306A/en active Pending
- 2003-01-15 DE DE10301169A patent/DE10301169A1/en not_active Ceased
- 2003-01-20 KR KR1020030003705A patent/KR100702297B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| DE10301169A1 (en) | 2003-07-31 |
| CN1434521A (en) | 2003-08-06 |
| JP2003224306A (en) | 2003-08-08 |
| KR20030063211A (en) | 2003-07-28 |
| KR100702297B1 (en) | 2007-03-30 |
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