TWD215707S - 物理氣相沉積腔室的濺射靶材 - Google Patents

物理氣相沉積腔室的濺射靶材 Download PDF

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Publication number
TWD215707S
TWD215707S TW109305355F TW109305355F TWD215707S TW D215707 S TWD215707 S TW D215707S TW 109305355 F TW109305355 F TW 109305355F TW 109305355 F TW109305355 F TW 109305355F TW D215707 S TWD215707 S TW D215707S
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Taiwan
Prior art keywords
vapor deposition
physical vapor
deposition chamber
sputter target
design
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TW109305355F
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English (en)
Chinese (zh)
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馬丁 萊克
威廉 富奇堤曼
伊利亞 拉維斯基
斯里尼瓦薩勞 葉德拉
基倫古莫妮拉珊卓拉 沙芬戴亞
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美商應用材料股份有限公司
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Publication of TWD215707S publication Critical patent/TWD215707S/zh

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TW109305355F 2020-03-23 2020-09-23 物理氣相沉積腔室的濺射靶材 TWD215707S (zh)

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US29/728,957 USD937329S1 (en) 2020-03-23 2020-03-23 Sputter target for a physical vapor deposition chamber
US29/728,957 2020-03-23

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TWD215707S true TWD215707S (zh) 2021-12-01

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TW109305355F TWD215707S (zh) 2020-03-23 2020-09-23 物理氣相沉積腔室的濺射靶材

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US (2) USD937329S1 (ja)
JP (2) JP1702035S (ja)
TW (2) TWD227747S (ja)

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JP1702035S (ja) 2021-12-13
USD970566S1 (en) 2022-11-22
TWD227747S (zh) 2023-10-01
USD937329S1 (en) 2021-11-30
JP1685527S (ja) 2021-05-17

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