TW230259B - - Google Patents

Info

Publication number
TW230259B
TW230259B TW080105841A TW80105841A TW230259B TW 230259 B TW230259 B TW 230259B TW 080105841 A TW080105841 A TW 080105841A TW 80105841 A TW80105841 A TW 80105841A TW 230259 B TW230259 B TW 230259B
Authority
TW
Taiwan
Application number
TW080105841A
Original Assignee
Hitacha Seisakusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitacha Seisakusho Kk filed Critical Hitacha Seisakusho Kk
Application granted granted Critical
Publication of TW230259B publication Critical patent/TW230259B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW080105841A 1990-08-03 1991-07-26 TW230259B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20500490A JP3169599B2 (ja) 1990-08-03 1990-08-03 半導体装置、その駆動方法、その読み出し方法

Publications (1)

Publication Number Publication Date
TW230259B true TW230259B (zh) 1994-09-11

Family

ID=16499860

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080105841A TW230259B (zh) 1990-08-03 1991-07-26

Country Status (7)

Country Link
US (6) US5307304A (zh)
EP (4) EP1024498A3 (zh)
JP (1) JP3169599B2 (zh)
KR (1) KR100236994B1 (zh)
CN (1) CN1035291C (zh)
DE (1) DE69132859T2 (zh)
TW (1) TW230259B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940740B2 (en) 2001-06-22 2005-09-06 Matsushita Electric Industrial Co., Ltd. Multilevel semiconductor memory device and method for driving the same as a neuron element in a neural network computer
US7834972B2 (en) 2006-03-15 2010-11-16 Au Optronics Corp. Display circuits
CN101101314B (zh) * 2007-08-23 2011-07-06 友达光电股份有限公司 显示面板的测试治具及测试方法

Families Citing this family (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JP3207227B2 (ja) * 1991-11-08 2001-09-10 ローム株式会社 不揮発性半導体記憶装置
US5434742A (en) * 1991-12-25 1995-07-18 Hitachi, Ltd. Capacitor for semiconductor integrated circuit and method of manufacturing the same
US5401680A (en) * 1992-02-18 1995-03-28 National Semiconductor Corporation Method for forming a ceramic oxide capacitor having barrier layers
US5329486A (en) * 1992-04-24 1994-07-12 Motorola, Inc. Ferromagnetic memory device
DE69327815T2 (de) * 1992-05-29 2000-08-17 Texas Instruments Inc Donatoren-dotierte Perovskite für Dünnfilm-Dielektrika
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JPH06302179A (ja) * 1993-04-13 1994-10-28 Casio Comput Co Ltd 電子機器
JPH07235648A (ja) * 1994-02-24 1995-09-05 Hitachi Ltd 半導体記憶装置
JP2576425B2 (ja) * 1994-10-27 1997-01-29 日本電気株式会社 強誘電体メモリ装置
US5504330A (en) * 1994-11-22 1996-04-02 Texas Instruments Incorporated Lead substitured perovskites for thin-film pyroelectric devices
JPH08180673A (ja) * 1994-12-27 1996-07-12 Nec Corp 強誘電体メモリセル及びそのアクセス装置
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5625529A (en) * 1995-03-28 1997-04-29 Samsung Electronics Co., Ltd. PZT thin films for ferroelectric capacitor and method for preparing the same
US5675530A (en) * 1995-08-02 1997-10-07 Matsushita Electric Industrial Co., Ltd. Ferroelectric memory device
US5808929A (en) * 1995-12-06 1998-09-15 Sheikholeslami; Ali Nonvolatile content addressable memory
JP3607032B2 (ja) * 1996-06-03 2005-01-05 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ及びその駆動方法
US6094370A (en) * 1996-06-10 2000-07-25 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
US6320782B1 (en) * 1996-06-10 2001-11-20 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
JP3766181B2 (ja) * 1996-06-10 2006-04-12 株式会社東芝 半導体記憶装置とそれを搭載したシステム
JP3629099B2 (ja) * 1996-06-28 2005-03-16 株式会社東芝 半導体記憶装置
JPH1049256A (ja) * 1996-07-31 1998-02-20 Matsushita Electric Ind Co Ltd 電気配線材処理構造
EP0837504A3 (en) * 1996-08-20 1999-01-07 Ramtron International Corporation Partially or completely encapsulated ferroelectric device
US6027947A (en) * 1996-08-20 2000-02-22 Ramtron International Corporation Partially or completely encapsulated top electrode of a ferroelectric capacitor
JPH1093030A (ja) * 1996-09-17 1998-04-10 Toshiba Corp 強誘電体不揮発性メモリ
JP3542002B2 (ja) * 1996-09-24 2004-07-14 株式会社ルネサステクノロジ システム
US5891798A (en) 1996-12-20 1999-04-06 Intel Corporation Method for forming a High dielectric constant insulator in the fabrication of an integrated circuit
KR100234877B1 (ko) * 1997-01-13 1999-12-15 윤종용 강유전체 랜덤 억세스 반도체 메모리 장치 및 그 동작 방법
AU5906098A (en) * 1997-01-27 1998-08-18 Radiant Technologies, Inc. Reference cell system for memories based on ferroelectric memory cells
KR100269314B1 (ko) * 1997-02-17 2000-10-16 윤종용 플라즈마처리를이용한반도체장치의커패시터제조방법
CA2198839C (en) * 1997-02-28 2004-11-02 Richard C. Foss Enhanced asic process cell
JP3003628B2 (ja) * 1997-06-16 2000-01-31 日本電気株式会社 強誘電体メモリとその書き込み方法
JP3196824B2 (ja) * 1997-07-16 2001-08-06 日本電気株式会社 強誘電体メモリ装置
US5959878A (en) * 1997-09-15 1999-09-28 Celis Semiconductor Corporation Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same
JPH11110976A (ja) * 1997-10-02 1999-04-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6074885A (en) * 1997-11-25 2000-06-13 Radiant Technologies, Inc Lead titanate isolation layers for use in fabricating PZT-based capacitors and similar structures
JP3741852B2 (ja) * 1998-01-22 2006-02-01 ローム株式会社 データ記憶装置
JP2000036568A (ja) * 1998-07-17 2000-02-02 Toshiba Corp 半導体記憶装置及びその製造方法
JP3717097B2 (ja) * 1998-07-29 2005-11-16 富士通株式会社 強誘電体メモリ
JP3239109B2 (ja) 1998-08-28 2001-12-17 株式会社半導体理工学研究センター 強誘電体不揮発性メモリとその読み出し方法
JP3319437B2 (ja) * 1999-06-04 2002-09-03 ソニー株式会社 強誘電体メモリおよびそのアクセス方法
US6034390A (en) * 1999-06-25 2000-03-07 Infineon Technologies North America Corp. Multi-bit trench capacitor
KR100324594B1 (ko) * 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
JP4350222B2 (ja) * 1999-08-26 2009-10-21 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリ装置の動作方法
US6838718B2 (en) 1999-09-28 2005-01-04 Rohm Co., Ltd. Ferroelectric capacitor and ferroelectric memory
JP3596746B2 (ja) * 1999-09-28 2004-12-02 ローム株式会社 強誘電体キャパシタおよびこれを用いた強誘電体メモリ
US6392916B1 (en) * 1999-10-01 2002-05-21 Samsung Electronics Co., Ltd. Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
US6497925B1 (en) 1999-12-14 2002-12-24 Seagate Technology Llc Surface treatment on solgel coated substrate to improve glide height performance
DE10008617A1 (de) * 2000-02-24 2001-09-06 Infineon Technologies Ag Verfahren zur Herstellung einer ferroelektrischen Schicht
JP4670177B2 (ja) * 2000-05-26 2011-04-13 ソニー株式会社 強誘電体型不揮発性半導体メモリ及びその駆動方法
US6720596B2 (en) * 2000-10-17 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for driving the same
DE10056159C2 (de) * 2000-11-13 2002-10-24 Infineon Technologies Ag MRAM-Anordnung mit Auswahltransistoren großer Kanalweite
DE10058965B4 (de) * 2000-11-28 2007-10-11 Infineon Technologies Ag RAM-Speicher
WO2002101928A1 (fr) * 2001-06-06 2002-12-19 Matsushita Electric Industrial Co., Ltd. Selecteur non volatil et dispositif de circuit integre
JP2003178578A (ja) 2001-10-01 2003-06-27 Sony Corp 強誘電体型不揮発性半導体メモリ
KR100487417B1 (ko) * 2001-12-13 2005-05-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그를 이용한멀티플-비트 데이타의 라이트 및 리드 방법
US6590797B1 (en) * 2002-01-09 2003-07-08 Tower Semiconductor Ltd. Multi-bit programmable memory cell having multiple anti-fuse elements
JP3770171B2 (ja) * 2002-02-01 2006-04-26 ソニー株式会社 メモリ装置およびそれを用いたメモリシステム
JP2003263899A (ja) * 2002-03-08 2003-09-19 Fujitsu Ltd 半導体記憶装置
JP3987389B2 (ja) * 2002-07-10 2007-10-10 株式会社東芝 半導体記憶装置
JP4376495B2 (ja) * 2002-08-13 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体メモリ
US6920060B2 (en) * 2002-08-14 2005-07-19 Intel Corporation Memory device, circuits and methods for operating a memory device
JP4141767B2 (ja) * 2002-08-27 2008-08-27 富士通株式会社 強誘電体キャパシタを使用した不揮発性データ記憶回路
US20040088481A1 (en) * 2002-11-04 2004-05-06 Garney John I. Using non-volatile memories for disk caching
US6800890B1 (en) * 2002-12-30 2004-10-05 Infineon Technologies Aktiengesellschaft Memory architecture with series grouped by cells
US6886484B2 (en) * 2003-02-12 2005-05-03 Georg K. Thomas Composite tension rod terminal systems
US7291878B2 (en) * 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
JP4159095B2 (ja) * 2003-12-03 2008-10-01 インターナショナル・ビジネス・マシーンズ・コーポレーション 磁気記憶装置
KR100583114B1 (ko) * 2003-12-10 2006-05-23 주식회사 하이닉스반도체 하이브리드 스위치 셀 및 이를 이용한 메모리 장치
US7558911B2 (en) * 2003-12-18 2009-07-07 Intel Corporation Maintaining disk cache coherency in multiple operating system environment
DE102004002204A1 (de) * 2004-01-15 2005-08-11 Epcos Ag Keramikmaterial
JP2005236135A (ja) * 2004-02-20 2005-09-02 Elpida Memory Inc 半導体装置の製造方法
US7328304B2 (en) * 2004-02-27 2008-02-05 Intel Corporation Interface for a block addressable mass storage system
DE102004044413A1 (de) * 2004-09-14 2006-03-16 Infineon Technologies Ag Halbleiterspeicherbauelement
US20060065916A1 (en) * 2004-09-29 2006-03-30 Xubai Zhang Varactors and methods of manufacture and use
JP2006127583A (ja) 2004-10-26 2006-05-18 Elpida Memory Inc 不揮発性半導体記憶装置及び相変化メモリ
JP4446179B2 (ja) * 2005-02-02 2010-04-07 エルピーダメモリ株式会社 半導体装置の製造方法
JP4591821B2 (ja) * 2005-02-09 2010-12-01 エルピーダメモリ株式会社 半導体装置
KR100682218B1 (ko) * 2005-05-30 2007-02-12 주식회사 하이닉스반도체 비휘발성 반도체 메모리 장치
US7605410B2 (en) * 2006-02-23 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
JP4932341B2 (ja) * 2006-06-23 2012-05-16 ルネサスエレクトロニクス株式会社 半導体記憶装置及び半導体記憶装置の動作方法
JP4545133B2 (ja) * 2006-11-09 2010-09-15 富士通株式会社 半導体記憶装置及びその製造方法
KR100859587B1 (ko) * 2007-03-07 2008-09-23 삼성전자주식회사 강유전체 기록매체 및 그의 제조 방법과 이를 이용한정보저장장치
JP4535076B2 (ja) * 2007-03-14 2010-09-01 セイコーエプソン株式会社 強誘電体キャパシタとその製造方法
US9390857B2 (en) * 2008-09-30 2016-07-12 General Electric Company Film capacitor
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8760907B2 (en) * 2010-11-30 2014-06-24 Radiant Technologies, Inc. Analog memories utilizing ferroelectric capacitors
KR101429160B1 (ko) * 2013-06-21 2014-09-23 한국과학기술원 멀티비트 메모리 소자
JP6617394B2 (ja) * 2015-12-18 2019-12-11 ローム株式会社 半導体装置
EP3507805A4 (en) 2016-08-31 2020-06-03 Micron Technology, Inc. DEVICES AND METHOD WITH FERROELECTRIC MEMORY AND FOR OPERATING FERROELECTRIC MEMORY
KR102314663B1 (ko) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법
KR102227270B1 (ko) 2016-08-31 2021-03-15 마이크론 테크놀로지, 인크. 강유전 메모리 셀
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10867675B2 (en) * 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US10083973B1 (en) * 2017-08-09 2018-09-25 Micron Technology, Inc. Apparatuses and methods for reading memory cells
CN108110007A (zh) * 2017-11-03 2018-06-01 中国科学院微电子研究所 铁电存储器及其访问方法
US10762944B2 (en) * 2017-12-18 2020-09-01 Micron Technology, Inc. Single plate configuration and memory array operation
US10529410B2 (en) 2017-12-18 2020-01-07 Micron Technology, Inc. Techniques for accessing an array of memory cells to reduce parasitic coupling
US10600468B2 (en) * 2018-08-13 2020-03-24 Wuxi Petabyte Technologies Co, Ltd. Methods for operating ferroelectric memory cells each having multiple capacitors
US11017831B2 (en) 2019-07-15 2021-05-25 Micron Technology, Inc. Ferroelectric memory cell access
CN110706732B (zh) * 2019-10-14 2021-04-13 长江存储科技有限责任公司 存储器芯片的失效分析方法
WO2022094814A1 (zh) * 2020-11-04 2022-05-12 华为技术有限公司 一种铁电存储器及存储设备
CN116935912A (zh) * 2022-04-11 2023-10-24 华为技术有限公司 铁电存储器
US20230395134A1 (en) * 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL243983A (zh) * 1959-10-02 1964-02-05
US3132326A (en) * 1960-03-16 1964-05-05 Control Data Corp Ferroelectric data storage system and method
US3710353A (en) * 1971-12-30 1973-01-09 Ibm Thermal capacitative-ferroelectric storage device
US3866189A (en) * 1973-02-16 1975-02-11 Judo Lewis Berger Recording and playback device without moving parts
US3832700A (en) * 1973-04-24 1974-08-27 Westinghouse Electric Corp Ferroelectric memory device
JPS5323487Y2 (zh) * 1973-10-19 1978-06-17
JPS5636518B2 (zh) * 1974-02-04 1981-08-25
US4158433A (en) * 1976-11-22 1979-06-19 Glen Peterson Method of and apparatus for securing and storing personal information
US4437139A (en) * 1982-12-17 1984-03-13 International Business Machines Corporation Laser annealed dielectric for dual dielectric capacitor
DE3502147A1 (de) * 1984-01-23 1985-08-08 Hitachi Microcomputer Engineering Ltd., Kodaira, Tokio/Tokyo Datenverarbeitungssystem mit verbesserter pufferspeichersteuerung
JP2573561B2 (ja) 1985-04-04 1997-01-22 日本電気株式会社 高密度メモリ素子
US4772985A (en) * 1986-09-24 1988-09-20 Kabushiki Kaisha Toshiba Thick film capacitor
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4807085A (en) * 1987-05-28 1989-02-21 Iwasaki Electric Co., Ltd. Nonlinear capacitor for generating high-voltage pulses
CA1340340C (en) 1987-06-02 1999-01-26 Joseph T. Evans, Jr. Non-volatile memory circuit using ferroelectric capacitor storage element
US4914627A (en) * 1987-07-02 1990-04-03 Ramtron Corporation One transistor memory cell with programmable capacitance divider
JPH01251760A (ja) 1988-03-31 1989-10-06 Seiko Epson Corp 強誘電体記憶装置
US4893272A (en) * 1988-04-22 1990-01-09 Ramtron Corporation Ferroelectric retention method
JPH0294473A (ja) 1988-09-30 1990-04-05 Toshiba Corp 不揮発性半導体装置
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
JPH088339B2 (ja) * 1988-10-19 1996-01-29 株式会社東芝 半導体メモリ
US5006843A (en) * 1988-12-01 1991-04-09 Werner Hauer Security module to preclude unauthorized users to operate motor driven equipment and to protect valuable parts of the motor from unauthorized exchange
JPH02158173A (ja) 1988-12-12 1990-06-18 Seiko Epson Corp 記憶装置
US5604881A (en) * 1988-12-22 1997-02-18 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having a multiplexed optical data interface
JPH02183569A (ja) 1989-01-10 1990-07-18 Seiko Epson Corp 強誘電体記憶装置
KR950000156B1 (ko) * 1989-02-08 1995-01-10 세이꼬 엡슨 가부시끼가이샤 반도체 장치
JPH02232973A (ja) 1989-03-07 1990-09-14 Seiko Epson Corp 半導体装置
JPH02301093A (ja) 1989-05-16 1990-12-13 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH03142973A (ja) 1989-10-30 1991-06-18 Seiko Epson Corp 半導体記憶装置
JPH04228191A (ja) 1990-06-21 1992-08-18 Seiko Instr Inc 半導体集積回路
DE4119248A1 (de) * 1990-06-21 1992-01-02 Seiko Instr Inc Integrierter halbleiterschaltkreis
US5663901A (en) * 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
KR100339415B1 (ko) * 1999-09-08 2002-05-31 박종섭 불휘발성 강유전체 메모리 장치
JP2001102465A (ja) * 1999-09-30 2001-04-13 Rohm Co Ltd 不揮発性メモリ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6940740B2 (en) 2001-06-22 2005-09-06 Matsushita Electric Industrial Co., Ltd. Multilevel semiconductor memory device and method for driving the same as a neuron element in a neural network computer
US7834972B2 (en) 2006-03-15 2010-11-16 Au Optronics Corp. Display circuits
US8174662B2 (en) 2006-03-15 2012-05-08 Au Optronics Corp. Display circuits
CN101101314B (zh) * 2007-08-23 2011-07-06 友达光电股份有限公司 显示面板的测试治具及测试方法

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US20020101757A1 (en) 2002-08-01
EP1024499A3 (en) 2002-05-02
US6940741B2 (en) 2005-09-06
KR920005328A (ko) 1992-03-28
JPH0490189A (ja) 1992-03-24
EP0469934A3 (en) 1992-09-09
EP1024497A2 (en) 2000-08-02
US5307304A (en) 1994-04-26
EP1024498A2 (en) 2000-08-02
EP0469934A2 (en) 1992-02-05
US20040174731A1 (en) 2004-09-09
EP1024499A2 (en) 2000-08-02
JP3169599B2 (ja) 2001-05-28
US5629888A (en) 1997-05-13
US20030174553A1 (en) 2003-09-18
EP1024498A3 (en) 2002-05-08
DE69132859D1 (de) 2002-01-24
DE69132859T2 (de) 2002-05-16
EP0469934B1 (en) 2001-12-12
CN1059798A (zh) 1992-03-25
US5936832A (en) 1999-08-10
EP1024497A3 (en) 2002-05-08
KR100236994B1 (ko) 2000-01-15
CN1035291C (zh) 1997-06-25

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