DE69132859D1 - Betriebsverfahren und Anordnung eines Halbleiterspeichers - Google Patents

Betriebsverfahren und Anordnung eines Halbleiterspeichers

Info

Publication number
DE69132859D1
DE69132859D1 DE69132859T DE69132859T DE69132859D1 DE 69132859 D1 DE69132859 D1 DE 69132859D1 DE 69132859 T DE69132859 T DE 69132859T DE 69132859 T DE69132859 T DE 69132859T DE 69132859 D1 DE69132859 D1 DE 69132859D1
Authority
DE
Germany
Prior art keywords
arrangement
semiconductor memory
operating method
operating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132859T
Other languages
English (en)
Other versions
DE69132859T2 (de
Inventor
Ryuichi Saito
Hidekatsu Onose
Yutaka Kobayashi
Michio Ohue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69132859D1 publication Critical patent/DE69132859D1/de
Publication of DE69132859T2 publication Critical patent/DE69132859T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
DE69132859T 1990-08-03 1991-08-02 Betriebsverfahren und Anordnung eines Halbleiterspeichers Expired - Fee Related DE69132859T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20500490A JP3169599B2 (ja) 1990-08-03 1990-08-03 半導体装置、その駆動方法、その読み出し方法

Publications (2)

Publication Number Publication Date
DE69132859D1 true DE69132859D1 (de) 2002-01-24
DE69132859T2 DE69132859T2 (de) 2002-05-16

Family

ID=16499860

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132859T Expired - Fee Related DE69132859T2 (de) 1990-08-03 1991-08-02 Betriebsverfahren und Anordnung eines Halbleiterspeichers

Country Status (7)

Country Link
US (6) US5307304A (de)
EP (4) EP0469934B1 (de)
JP (1) JP3169599B2 (de)
KR (1) KR100236994B1 (de)
CN (1) CN1035291C (de)
DE (1) DE69132859T2 (de)
TW (1) TW230259B (de)

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JPH02158173A (ja) 1988-12-12 1990-06-18 Seiko Epson Corp 記憶装置
US5604881A (en) 1988-12-22 1997-02-18 Framdrive Ferroelectric storage device emulating a rotating disk drive unit in a computer system and having a multiplexed optical data interface
JPH02183569A (ja) 1989-01-10 1990-07-18 Seiko Epson Corp 強誘電体記憶装置
JPH02232973A (ja) 1989-03-07 1990-09-14 Seiko Epson Corp 半導体装置
KR950000156B1 (ko) 1989-02-08 1995-01-10 세이꼬 엡슨 가부시끼가이샤 반도체 장치
JPH02301093A (ja) 1989-05-16 1990-12-13 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH03142973A (ja) 1989-10-30 1991-06-18 Seiko Epson Corp 半導体記憶装置
JPH04228191A (ja) 1990-06-21 1992-08-18 Seiko Instr Inc 半導体集積回路
DE4119248A1 (de) 1990-06-21 1992-01-02 Seiko Instr Inc Integrierter halbleiterschaltkreis
US5663901A (en) 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
KR100339415B1 (ko) 1999-09-08 2002-05-31 박종섭 불휘발성 강유전체 메모리 장치
JP2001102465A (ja) 1999-09-30 2001-04-13 Rohm Co Ltd 不揮発性メモリ

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TW230259B (de) 1994-09-11
EP0469934B1 (de) 2001-12-12
US20030174553A1 (en) 2003-09-18
CN1059798A (zh) 1992-03-25
KR100236994B1 (ko) 2000-01-15
EP0469934A3 (en) 1992-09-09
JP3169599B2 (ja) 2001-05-28
US5936832A (en) 1999-08-10
DE69132859T2 (de) 2002-05-16
US6940741B2 (en) 2005-09-06
JPH0490189A (ja) 1992-03-24
US5629888A (en) 1997-05-13
US20020101757A1 (en) 2002-08-01
EP1024499A3 (de) 2002-05-02
EP0469934A2 (de) 1992-02-05
EP1024498A3 (de) 2002-05-08
CN1035291C (zh) 1997-06-25
EP1024498A2 (de) 2000-08-02
US5307304A (en) 1994-04-26
EP1024497A3 (de) 2002-05-08
EP1024499A2 (de) 2000-08-02
KR920005328A (ko) 1992-03-28
US20040174731A1 (en) 2004-09-09
EP1024497A2 (de) 2000-08-02

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