RU2019117901A - Защитное покрытие - Google Patents

Защитное покрытие Download PDF

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RU2019117901A
RU2019117901A RU2019117901A RU2019117901A RU2019117901A RU 2019117901 A RU2019117901 A RU 2019117901A RU 2019117901 A RU2019117901 A RU 2019117901A RU 2019117901 A RU2019117901 A RU 2019117901A RU 2019117901 A RU2019117901 A RU 2019117901A
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layer
precursor
precursor mixture
compound
formula
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RU2019117901A
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Шайлендра Викрам СИНГХ
Джанфранко АРЕСТА
Эндрю Саймон Холл БРУКС
Сиобан Мари ВУЛЛАРД
Гарет ХЕННИГЭН
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Семблант Лимитед
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/50—Multilayers
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    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
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    • H05K3/285—Permanent coating compositions
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    • B05D1/00—Processes for applying liquids or other fluent materials
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2252/00—Sheets
    • B05D2252/04—Sheets of definite length in a continuous process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2451/00—Type of carrier, type of coating (Multilayers)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2518/00—Other type of polymers
    • B05D2518/10—Silicon-containing polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0486—Operating the coating or treatment in a controlled atmosphere
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
    • C08G2261/342—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms
    • C08G2261/3424—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms non-conjugated, e.g. paracyclophanes or xylenes
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
    • C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
    • C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C09D127/20—Homopolymers or copolymers of hexafluoropropene
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09872—Insulating conformal coating
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09—Treatments involving charged particles
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    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1305—Moulding and encapsulation
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    • H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
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Claims (34)

1. Способ осаждения защитного покрытия на основу, причем
защитное покрытие содержит (i) гидроизолирующий слой, который находится в контакте с основой, и который содержит первый подслой, необязательно - один или более промежуточных подслоев, и конечный подслой, (ii) слой для защиты от механических повреждений, который является неорганическим, и (iii) градиентный слой, расположенный между гидроизолирующим слоем и слоем для защиты от механических повреждений; и
способ включает
(а) осаждение первого подслоя гидроизолирующего слоя на основу посредством плазменного осаждения прекурсорной смеси (А), содержащей кремнийорганическое соединение, фторуглеводород или соединение формулы (X)
Figure 00000001
,
в которой Z1 обозначает C1-C3-алкильную группу или С2-С3-алкенильную группу;
Z2 обозначает атом водорода, C1-C3-алкильную группу или С2-С3-алкенильную группу;
Z3 обозначает атом водорода, C1-C3-алкильную группу или С2-С3-алкенильную группу;
Z4 обозначает атом водорода, C1-C3-алкильную группу или С2-С3-алкенильную группу;
Z5 обозначает атом водорода, C1-C3-алкильную группу или С2-С3-алкенильную группу; и
Z6 обозначает атом водорода, C1-C3-алкильную группу или С2-С3-алкенильную группу;
(b) осаждение, если они имеются, одного или более промежуточных подслоев гидроизолирующего слоя, во всех случаях - посредством плазменного осаждения прекурсорной смеси (В), содержащей кремнийорганическое соединение, фторуглеводород или соединение формулы (X);
(c) осаждение конечного подслоя гидроизолирующего слоя посредством плазменного осаждения прекурсорной смеси (С), содержащей кремнийорганическое соединение, фторуглеводород или соединение формулы (X);
(d) осаждение градиентного слоя на конечный подслой гидроизолирующего слоя посредством плазменного осаждения прекурсорной смеси (D), которая содержит компоненты обеих прекурсорных смесей (С) и (Е); и
(e) осаждение слоя для защиты от механических повреждений на градиентный слой посредством плазменного осаждения прекурсорной смеси (Е), содержащей кремнийорганическое соединение.
2. Способ по п. 1, отличающийся тем, что плазменное осаждение является стимулированным плазмой химическим осаждением из паровой фазы (PECVD).
3. Способ по п. 1 или п. 2, отличающийся тем, что плазменное осаждение происходит при давлении, лежащем в диапазоне от 0,001 мбар до 10 мбар.
4. Способ по любому из предыдущих пунктов, отличающийся тем, что кремнийорганические соединения, которые могут присутствовать в любой из прекурсорных смесей с (А) по (Е), независимо друг от друга выбраны из гексаметилдисилоксана (HMDSO), тетраметилдисилоксана (TMDSO), 1,3-дивинилтетраметилдисилоксана (DVTMDSO), гексавинилдисилоксана (HVDSO), аллилтриметилсилана, аллилтриметоксисилана (ATMOS), тетраэтилортосиликата (TEOS), триметилсилана (TMS), триизопропилсилана (TiPS), тривинил-триметил-циклотрисилоксана (V3D3), тетравинил-тетраметил-циклотетрасилоксана (V4D4), тетраметилциклотетрасилоксана (TMCS), октаметилциклотетрасилоксана (OMCTS), гексаметилдисилазана (HMDSN), 2,4,6-триметил-2,4,6-тривинилциклотрисилазана, диметиламино-триметилсилана (DMATMS), бис(диметиламино)диметилсилана (BDMADMS) и трис(диметиламино)метилсилана (TDMAMS).
5. Способ по п. 4, отличающийся тем, что кремнийорганические соединения, которые могут присутствовать в любой из прекурсорных смесей с (А) по (Е), независимо друг от друга выбраны из гексаметилдисилоксана (HMDSO) и тетраметилдисилоксана (TMDSO), и предпочтительно являются гексаметилдисилоксаном (HMDSO).
6. Способ по любому из предыдущих пунктов, отличающийся тем, что углеводородные соединения формулы (X), которые могут присутствовать в любой из прекурсорных смесей с (А) по (Е), независимо друг от друга выбраны из 1,4-диметилбензола, 1,3-диметилбензола, 1,2-диметилбензола, толуола, 4-метилстирола, 3-метилстирола, 2-метилстирола, 1,4-дивинилбензола, 1,3-дивинилбензола, 1,2-дивинилбензола, 1,4-этилвинилбензола, 1,3-этилвинилбензола и 1,2-этилвинилбензола.
7. Способ по п. 6, отличающийся тем, что углеводородные соединения формулы (X), которые могут присутствовать в любой из прекурсорных смесей с (А) по (Е), являются 1,4-диметилбензолом.
8. Способ по любому из предыдущих пунктов, отличающийся тем, что фторуглеводородные соединения, которые могут присутствовать в любой из прекурсорных смесей с (А) по (Е), независимо друг от друга выбраны из CF4, C2F4, C2F6, C3F6, C3F8 и C4F8.
9. Способ по п. 8, отличающийся тем, что фторуглеводородные соединения, которые могут присутствовать в любой из прекурсорных смесей с (А) по (Е), являются C3F6.
10. Способ по любому из предыдущих пунктов, отличающийся тем, что слой для защиты от механических повреждений имеет нанотвердость, равную по меньшей мере 6 ГПа, предпочтительно - по меньшей мере 10 ГПа.
11. Способ по любому из предыдущих пунктов, отличающийся тем, что прекурсорная смесь (Е) содержит кремнийорганическое соединение и O2, N2O или NO2.
12. Способ по любому из пунктов с 1 по 10, отличающийся тем, что прекурсорная смесь (Е) содержит азотсодержащее кремнийорганическое соединение.
13. Способ по любому из пунктов с 1 по 10, отличающийся тем, что прекурсорная смесь (Е) содержит кремнийорганическое соединение и N2 или NH3.
14. Способ по любому из пунктов с 11 по 13, отличающийся тем, что прекурсорная смесь (Е) дополнительно содержит Не, Ar и/или Kr.
15. Способ по любому из предыдущих пунктов, отличающийся тем, что (i) прекурсорная смесь (А) содержит фторуглеводород и (ii) прекурсорные смеси (С) и, если она присутствует, (В) содержат либо фторуглеводород, либо соединение формулы (X), при условии, что по меньшей мере одна из прекурсорных смесей (В) или (С) содержит соединение формулы (X).
16. Способ по любому из пунктов с 1 по 14, отличающийся тем, что каждая из прекурсорной смеси (А), прекурсорной смеси (С) и, если она присутствует, прекурсорной смеси (В) содержит кремнийорганическое соединение.
17. Способ по любому из пунктов с 1 по 14, отличающийся тем, что (i) прекурсорная смесь (А) содержит кремнийорганическое соединение и (ii) прекурсорные смеси (С) и, если она присутствует, (В) содержат либо кремнийорганическое соединение, либо соединение формулы (X), при условии, что по меньшей мере одна из прекурсорных смесей (В) или (С) содержит соединение формулы (X).
18. Способ по п. 16 или п. 17, отличающийся тем, что прекурсорная смесь (А) содержит кремнийорганическое соединение и не содержит или по существу не содержит O2, N2O или NO2, так что образующийся первый подслой является органическим.
19. Способ по любому из предыдущих пунктов, отличающийся тем, что основой является (i) наружный корпус электрического прибора или (ii) печатная плата.
20. Основа с защитным покрытием, которое может быть получено способом по любому из предыдущих пунктов.
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