KR970072163A - 반도체 질화막 에칭장치 - Google Patents

반도체 질화막 에칭장치 Download PDF

Info

Publication number
KR970072163A
KR970072163A KR1019960061033A KR19960061033A KR970072163A KR 970072163 A KR970072163 A KR 970072163A KR 1019960061033 A KR1019960061033 A KR 1019960061033A KR 19960061033 A KR19960061033 A KR 19960061033A KR 970072163 A KR970072163 A KR 970072163A
Authority
KR
South Korea
Prior art keywords
phosphoric acid
semiconductor nitride
nitride film
chemical
acid solution
Prior art date
Application number
KR1019960061033A
Other languages
English (en)
Other versions
KR100249143B1 (ko
Inventor
코지 반
Original Assignee
기다오까 다까시
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 기다오까 다까시, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 기다오까 다까시
Publication of KR970072163A publication Critical patent/KR970072163A/ko
Application granted granted Critical
Publication of KR100249143B1 publication Critical patent/KR100249143B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)

Abstract

실리콘 질소화막의 에칭레이트의 안정화 및 에칭선택비의 안정적제어를 얻는다.
열인산계의 약액에 있어서, 인산농도, 실리콘농도, 불소농도, 비중등을 측정하는 수단을 설치하여, 약액첨가물의 제어, 약액의 교환등에 의해, 약액의 성분 및 농도, 특히 실리콘 농도의 조정을 하도록 하여, 에칭레이트를 제어하도록 하였다.

Description

반도체 질화막 에칭장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예1에 의한 질화막 에칭장치(웨트처리장치)의 전체의 구성을 도시한 도면.

Claims (4)

  1. 가열한 인산용액을 주제로 하는 약액에 불화암모늄 또는 버퍼드플루오르화수소산을 첨가하는 수단을 구비한 것을 특징으로 하는 반도체 질화막에칭장치.
  2. 인산용액을 주제로 하는 약액에 실리콘 또는 실리콘 화합물을 첨가하는 수단을 구비한 것을 특징으로 하는 반도체 질화막 에칭장치.
  3. 인산용액을 주제로 하는 처리조내의 약액을 냉각하여 배출하는 수단과, 새로이 인산용액을 주입하는 수단을 구비하여, 처리조내의 약액의 성분의 조정을 하도록 한 것을 특징으로 하는 반도체 질화막 에칭장치.
  4. 인산용액을 주제로 하고 실리콘을 포함하는 약액을 수용한 복수의 처리조를 구비하여, 이들의 처리조의 사이에서 약액을 이송하는 것에 의해 상기 처리조에 수용된 약액의 실리콘농도의 조정을 하도록 한 것을 특징으로 하는 반도체 질화막 에칭장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960061033A 1996-04-03 1996-12-02 반도체 질화막 에칭장치 KR100249143B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8081176A JPH09275091A (ja) 1996-04-03 1996-04-03 半導体窒化膜エッチング装置
JP96-081176 1996-04-03

Publications (2)

Publication Number Publication Date
KR970072163A true KR970072163A (ko) 1997-11-07
KR100249143B1 KR100249143B1 (ko) 2000-03-15

Family

ID=13739164

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960061033A KR100249143B1 (ko) 1996-04-03 1996-12-02 반도체 질화막 에칭장치

Country Status (5)

Country Link
US (1) US6001215A (ko)
JP (1) JPH09275091A (ko)
KR (1) KR100249143B1 (ko)
DE (1) DE19648471A1 (ko)
TW (1) TW458376U (ko)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100252212B1 (ko) * 1997-03-31 2000-04-15 윤종용 반도체장치 제조용 질화규소막의 식각조성물과이를 이용한 식각방법 및 그에 의하여 제조되는 반도체장치
JP3492901B2 (ja) * 1997-12-03 2004-02-03 大日本スクリーン製造株式会社 基板の表面処理方法および表面処理装置
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings
US6117351A (en) * 1998-04-06 2000-09-12 Micron Technology, Inc. Method for etching dielectric films
KR100292953B1 (ko) * 1998-06-23 2001-11-30 윤종용 반도체소자제조용식각장치및이를이용한식각방법
JP3467411B2 (ja) * 1998-08-07 2003-11-17 松下電器産業株式会社 エッチング液，その製造方法及びエッチング方法
JP2000066426A (ja) * 1998-08-20 2000-03-03 Yamao Kosakusho:Kk Ｏｐｃドラムの再生装置
US6162370A (en) * 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6399517B2 (en) * 1999-03-30 2002-06-04 Tokyo Electron Limited Etching method and etching apparatus
US6699400B1 (en) * 1999-06-04 2004-03-02 Arne W. Ballantine Etch process and apparatus therefor
JP2001118920A (ja) * 1999-10-15 2001-04-27 Seiko Epson Corp 半導体装置およびその製造方法
KR100327342B1 (ko) * 1999-10-27 2002-03-06 윤종용 반도체소자 제조용 식각조성물 및 이 식각조성물을 이용한 식각방법
JP4289575B2 (ja) * 2000-02-02 2009-07-01 三菱電機株式会社 シリコン太陽電池の製造方法
JP2004503081A (ja) * 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウェーハのエッチング方法
TW527443B (en) * 2000-07-28 2003-04-11 Infineon Technologies Corp Etching composition and use thereof with feedback control of HF in BEOL clean
KR100867086B1 (ko) * 2001-04-27 2008-11-04 엔엑스피 비 브이 반도체 장치 제조 방법 및 장치
EP1296132B1 (en) * 2001-09-21 2007-04-18 Infineon Technologies AG Sensor cell for measuring the concentration of a component in a two component liquid mixture, apparatus and etching system
IL145649A0 (en) * 2001-09-25 2002-06-30 Nira Sciences Ltd Method and apparatus for real-time dynamic chemical analysis
EP1306886B1 (en) * 2001-10-18 2008-07-30 Infineon Technologies AG Apparatus for assessing the silicon dioxide content
KR100454120B1 (ko) * 2001-11-12 2004-10-26 삼성전자주식회사 화학적 기계적 연마 장비의 슬러리 공급 장치 및 방법
JP2003205463A (ja) * 2002-01-11 2003-07-22 Tokyo Seimitsu Co Ltd Ｃｍｐ研磨装置における研磨剤の調合装置及び調合方法
JP3975333B2 (ja) * 2002-03-29 2007-09-12 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
JP4062419B2 (ja) * 2002-05-21 2008-03-19 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
JP4062418B2 (ja) * 2002-05-21 2008-03-19 セイコーエプソン株式会社 処理装置および半導体装置の製造方法
TWI233157B (en) 2002-09-17 2005-05-21 M Fsi Ltd Regeneration process of etching solution, etching process, and etching system
US6987064B2 (en) * 2002-10-21 2006-01-17 Taiwan Semiconductor Manufacturing Co., Ltd Method and composition to improve a nitride/oxide wet etching selectivity
JP2004214243A (ja) * 2002-12-27 2004-07-29 Toshiba Corp 半導体ウェーハのエッチング方法及びエッチング装置
JP4111105B2 (ja) * 2003-09-01 2008-07-02 セイコーエプソン株式会社 エッチング装置
US20050159011A1 (en) * 2004-01-21 2005-07-21 Thirumala Vani K. Selective etching silicon nitride
JP3884440B2 (ja) * 2004-03-15 2007-02-21 株式会社東芝 フィルタおよび半導体処理装置
JP4393260B2 (ja) * 2004-04-20 2010-01-06 株式会社東芝 エッチング液管理方法
TWI235425B (en) * 2004-05-26 2005-07-01 Promos Technologies Inc Etching system and method for treating the etching solution thereof
US7846349B2 (en) * 2004-12-22 2010-12-07 Applied Materials, Inc. Solution for the selective removal of metal from aluminum substrates
EP1724824A3 (en) * 2005-05-17 2010-08-25 Apprecia Technology Inc. Equipment and method for measuring silicon concentration in phosphoric acid solution
TWI334624B (en) * 2006-01-30 2010-12-11 Dainippon Screen Mfg Apparatus for and method for processing substrate
JP2007207786A (ja) * 2006-01-30 2007-08-16 Ses Co Ltd 基板処理方法及び基板処理システム
US7849916B2 (en) * 2006-02-02 2010-12-14 Noah Precision, Llc Temperature control apparatus and method
US8409997B2 (en) * 2007-01-25 2013-04-02 Taiwan Semiconductor Maufacturing Co., Ltd. Apparatus and method for controlling silicon nitride etching tank
US8460478B2 (en) 2007-05-29 2013-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Wet processing apparatuses
JP4358259B2 (ja) 2007-06-05 2009-11-04 株式会社東芝 半導体製造装置および半導体製造方法
TWI452620B (zh) * 2007-08-20 2014-09-11 Chemical Art Technology Inc Etching apparatus and etching apparatus
JP5009207B2 (ja) * 2007-09-21 2012-08-22 大日本スクリーン製造株式会社 基板処理装置
US8211810B2 (en) 2007-09-21 2012-07-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
JP4966223B2 (ja) * 2008-02-29 2012-07-04 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP5035913B2 (ja) * 2008-09-22 2012-09-26 アプリシアテクノロジー株式会社 エッチング液の調製方法、エッチング方法及びエッチング装置
JP2010109064A (ja) * 2008-10-29 2010-05-13 Tosoh Corp エッチング方法
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
US20120048303A1 (en) * 2010-08-26 2012-03-01 Macronix International Co., Ltd. Process system and cleaning process
DE102010040869A1 (de) * 2010-09-16 2012-03-22 Robert Bosch Gmbh Vorrichtung zum Ätzen von Halbleiter-Wafern mit einer Inline-Prozesskontrolle
JP5490071B2 (ja) * 2011-09-12 2014-05-14 株式会社東芝 エッチング方法
WO2014151862A1 (en) * 2013-03-15 2014-09-25 Tel Fsi, Inc System for providing heated etching solution
JP6529625B2 (ja) * 2013-03-29 2019-06-12 芝浦メカトロニクス株式会社 ウェットエッチング装置
JP6302708B2 (ja) * 2013-03-29 2018-03-28 芝浦メカトロニクス株式会社 ウェットエッチング装置
JP6118689B2 (ja) * 2013-09-13 2017-04-19 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
JP6177664B2 (ja) * 2013-10-30 2017-08-09 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
TWI630652B (zh) * 2014-03-17 2018-07-21 斯克林集團公司 基板處理裝置及使用基板處理裝置之基板處理方法
JP6320868B2 (ja) * 2014-07-29 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101671118B1 (ko) 2014-07-29 2016-10-31 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6412734B2 (ja) * 2014-08-19 2018-10-24 アプリシアテクノロジー株式会社 珪素濃度測定装置、半導体用エッチング処理装置、及び珪素濃度測定方法
JP2016079429A (ja) * 2014-10-14 2016-05-16 株式会社佐藤化工機 基板処理設備および基板処理方法
KR20160050536A (ko) * 2014-10-30 2016-05-11 램테크놀러지 주식회사 질화막 식각 조성물 및 이를 이용한 반도체 장치의 제조 방법
JP6468956B2 (ja) * 2015-06-25 2019-02-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及びその装置
JP6446003B2 (ja) * 2015-08-27 2018-12-26 東芝メモリ株式会社 基板処理装置、基板処理方法およびエッチング液
US10147619B2 (en) 2015-08-27 2018-12-04 Toshiba Memory Corporation Substrate treatment apparatus, substrate treatment method, and etchant
KR102511986B1 (ko) 2015-09-02 2023-03-21 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
JP2017103328A (ja) 2015-12-01 2017-06-08 株式会社東芝 半導体装置及びその製造方法
US10373838B2 (en) * 2015-12-08 2019-08-06 Elemental Scientific, Inc. Automatic sampling of hot phosphoric acid for the determination of chemical element concentrations and control of semiconductor processes
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
JP2018018990A (ja) * 2016-07-28 2018-02-01 株式会社カネカ エッチング処理装置、およびエッチング処理方法
JP6940232B2 (ja) * 2016-09-23 2021-09-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP6789751B2 (ja) 2016-10-04 2020-11-25 東京エレクトロン株式会社 基板液処理装置、基板液処理方法および記憶媒体
JP6909620B2 (ja) * 2017-04-20 2021-07-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6777704B2 (ja) * 2017-10-20 2020-10-28 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR102264002B1 (ko) 2017-10-20 2021-06-11 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP6917868B2 (ja) * 2017-11-15 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7224117B2 (ja) * 2018-06-15 2023-02-17 東京エレクトロン株式会社 基板処理装置および処理液再利用方法
KR102538179B1 (ko) * 2018-09-04 2023-06-01 삼성전자주식회사 습식 식각 장치
CN109135752A (zh) * 2018-09-21 2019-01-04 湖北兴福电子材料有限公司 一种磷酸基蚀刻液及其配制方法
JP7158249B2 (ja) * 2018-11-09 2022-10-21 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR102084044B1 (ko) * 2018-12-24 2020-03-03 주식회사 세미부스터 인산용액 중의 실리콘 농도 분석방법
JP2020150126A (ja) * 2019-03-13 2020-09-17 東京エレクトロン株式会社 混合装置、混合方法および基板処理システム
US11075218B2 (en) * 2019-05-22 2021-07-27 Sandisk Technologies Llc Method of making a three-dimensional memory device using silicon nitride etching end point detection
CN112908845B (zh) * 2021-02-24 2023-10-10 上海华虹宏力半导体制造有限公司 氧化物薄膜初始蚀刻率的优化控制方法及系统
KR20240065582A (ko) * 2022-11-03 2024-05-14 주식회사 제우스 기판 식각 방법 및 기판 식각 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772105A (en) * 1970-07-24 1973-11-13 Shipley Co Continuous etching process
DE2321013A1 (de) * 1973-04-26 1974-11-14 Philips Nv Verfahren zum aetzen eines musters in einer siliciumnitridschicht und halbleiteranordnung, die durch dieses verfahren hergestellt ist
US4092211A (en) * 1976-11-18 1978-05-30 Northern Telecom Limited Control of etch rate of silicon dioxide in boiling phosphoric acid
JPS5368070A (en) * 1976-11-29 1978-06-17 Fujitsu Ltd Etching method
JPS5794574A (en) * 1980-12-02 1982-06-12 Seiko Epson Corp Etching vessel
JPS60137024A (ja) * 1983-12-26 1985-07-20 Matsushita Electronics Corp 窒化珪素膜のエツチング方法
US4540465A (en) * 1984-06-11 1985-09-10 Mcdonnell Douglas Corporation Process for continuous recovery of nitric acid/hydrofluoric acid titanium etchant
JPH0653253B2 (ja) * 1986-11-08 1994-07-20 松下電工株式会社 セラミツク基板の粗化法
JPH02137228A (ja) * 1988-11-17 1990-05-25 Nec Yamagata Ltd 半導体装置の製造方法
JP2725875B2 (ja) * 1990-04-25 1998-03-11 セントラル硝子株式会社 エッチング剤
US5227010A (en) * 1991-04-03 1993-07-13 International Business Machines Corporation Regeneration of ferric chloride etchants
US5310457A (en) * 1992-09-30 1994-05-10 At&T Bell Laboratories Method of integrated circuit fabrication including selective etching of silicon and silicon compounds
JPH06349808A (ja) * 1993-06-14 1994-12-22 Hitachi Ltd 窒化シリコン膜除去液およびそれを用いた半導体製造装置
JP3072876B2 (ja) * 1993-09-17 2000-08-07 日曹エンジニアリング株式会社 エッチング液の精製方法
US5472562A (en) * 1994-08-05 1995-12-05 At&T Corp. Method of etching silicon nitride
JPH0883792A (ja) * 1994-09-09 1996-03-26 Nippon Motorola Ltd エッチング剤及びエッチング方法

Also Published As

Publication number Publication date
US6001215A (en) 1999-12-14
JPH09275091A (ja) 1997-10-21
TW458376U (en) 2001-10-01
DE19648471A1 (de) 1997-10-09
KR100249143B1 (ko) 2000-03-15

Similar Documents

Publication Publication Date Title
KR970072163A (ko) 반도체 질화막 에칭장치
JP4590700B2 (ja) 基板洗浄方法及び基板洗浄装置
US9852915B2 (en) Etching apparatus
KR900017094A (ko) 기상표면 처리장치 및 방법
Agble et al. The prediction of Marangoni convection in binary liquid–liquid systems with added surfactants
KR920010786A (ko) 실리콘 질화막을 선택적으로 제거하기 위한 기체에 의한 프로세스
KR910002707A (ko) 건식에칭장치, 건식에칭방법 및 거기서 사용하기 위한 무수플루오르화수소 기체 발생기
KR940007157A (ko) 에칭제, 세정제 및 기기의 제조방법
KR940022736A (ko) 반도체 장치의 세정방법 및 그 장치
KR960002624A (ko) 건식 에칭 방법
KR950015629A (ko) 실리콘기판의 세정방법
KR970008397A (ko) 식각용액 및 이를 이용한 반도체 장치의 식각방법
MX158145A (es) Mejoras en proceso para microencapsular gotas de liquido hidrofilo en fase continua hidrofoba
JP7246990B2 (ja) エッチング液、及びエッチング方法
US20030139057A1 (en) Process and apparatus for removal of photoresist from semiconductor wafers
JP4419315B2 (ja) 基板洗浄方法及び基板洗浄装置
IT7967334A0 (it) Dispositivo particolarmente scambiatore di calore per la attuazione di processi fisici e chimici coinvolgenti almeno un liquido
BR9205457A (pt) Método e sistema para remover contaminantes de um substrato solido escolhido
JP4604320B2 (ja) 基板洗浄方法及び基板洗浄装置
JP2002143790A (ja) 基板洗浄方法及び基板洗浄装置
KR0120502Y1 (ko) 반도체 제조장비용 공정용액 공급장치
JPS61168925A (ja) 窒化膜のエツチング方法
JPH0749790Y2 (ja) 半導体ウェーハの洗浄装置
KR970018184A (ko) 인산 식각조 내의 희석액 공급 방법
JP2002143791A (ja) 基板洗浄方法及び基板洗浄装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051208

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee