TW458376U - Semiconductor nitride film etching device - Google Patents

Semiconductor nitride film etching device

Info

Publication number
TW458376U
TW458376U TW089215329U TW89215329U TW458376U TW 458376 U TW458376 U TW 458376U TW 089215329 U TW089215329 U TW 089215329U TW 89215329 U TW89215329 U TW 89215329U TW 458376 U TW458376 U TW 458376U
Authority
TW
Taiwan
Prior art keywords
nitride film
etching device
film etching
semiconductor nitride
semiconductor
Prior art date
Application number
TW089215329U
Other languages
English (en)
Inventor
Cozy Ban
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW458376U publication Critical patent/TW458376U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
TW089215329U 1996-04-03 1996-10-15 Semiconductor nitride film etching device TW458376U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8081176A JPH09275091A (ja) 1996-04-03 1996-04-03 半導体窒化膜エッチング装置

Publications (1)

Publication Number Publication Date
TW458376U true TW458376U (en) 2001-10-01

Family

ID=13739164

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089215329U TW458376U (en) 1996-04-03 1996-10-15 Semiconductor nitride film etching device

Country Status (5)

Country Link
US (1) US6001215A (zh)
JP (1) JPH09275091A (zh)
KR (1) KR100249143B1 (zh)
DE (1) DE19648471A1 (zh)
TW (1) TW458376U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452649A (zh) * 2013-03-29 2017-12-08 芝浦机械电子株式会社 湿式蚀刻装置

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CN107452649A (zh) * 2013-03-29 2017-12-08 芝浦机械电子株式会社 湿式蚀刻装置
CN107452649B (zh) * 2013-03-29 2020-10-20 芝浦机械电子株式会社 湿式蚀刻装置

Also Published As

Publication number Publication date
US6001215A (en) 1999-12-14
JPH09275091A (ja) 1997-10-21
KR970072163A (ko) 1997-11-07
DE19648471A1 (de) 1997-10-09
KR100249143B1 (ko) 2000-03-15

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