JP7224117B2 - 基板処理装置および処理液再利用方法 - Google Patents
基板処理装置および処理液再利用方法 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 467
- 239000007788 liquid Substances 0.000 title claims description 259
- 239000000758 substrate Substances 0.000 title claims description 134
- 238000000034 method Methods 0.000 title description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 155
- 239000010703 silicon Substances 0.000 claims description 155
- 229910052710 silicon Inorganic materials 0.000 claims description 155
- 238000002156 mixing Methods 0.000 claims description 64
- 238000005530 etching Methods 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 8
- 238000011084 recovery Methods 0.000 description 22
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- 230000007723 transport mechanism Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 230000008929 regeneration Effects 0.000 description 15
- 238000011069 regeneration method Methods 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 12
- 230000032258 transport Effects 0.000 description 12
- 235000011007 phosphoric acid Nutrition 0.000 description 11
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- 101100493713 Caenorhabditis elegans bath-45 gene Proteins 0.000 description 8
- 238000011068 loading method Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- Cleaning Or Drying Semiconductors (AREA)
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Description
まず、実施形態に係る基板処理装置の構成について図1を参照して説明する。図1は、実施形態に係る基板処理装置の構成を示す図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
次に、エッチング用の処理槽27の構成について図2を参照し説明する。図2は、実施形態に係るエッチング用の処理槽27の構成を示す図である。
次に、再生装置7の構成について図3を参照して説明する。図3は、実施形態に係る再生装置7の構成を示す図である。
次に、再生装置7による処理液の再生処理の内容について図4を参照して説明する。図4は、実施形態に係る再生処理の一例を示す図である。図4では、一例として、処理槽27において使用される処理液のシリコン濃度の初期値が75ppmである場合について説明する。
次に、上述した再生装置7の変形例について説明する。図5は、実施形態における第1変形例に係る再生装置7の構成を示す図である。
7 再生装置
8 基板
27 処理槽
71 回収路
72 貯留部
73 除去部
74 第1供給部
75 第2供給部
76 混合部
77 戻り路
Claims (9)
- 薬液とシリコンとを含む処理液に基板を浸漬させて該基板のエッチング処理を行う処理槽と、
前記処理槽から排出された前記処理液を回収して貯留する貯留部と、
前記処理槽から排出された前記処理液の一部を回収し、回収した前記処理液からシリコンを除去する除去部と、
前記貯留部に貯留された前記処理液と、前記除去部によってシリコンが除去された前記処理液とを混合する混合部と、
前記混合部によって混合された前記処理液を前記処理槽に戻す戻り路と
を備え、
前記除去部は、
回収した前記処理液に含まれるシリコンを一部を前記処理液に残して除去する、基板処理装置。 - 前記除去部は、回収した前記処理液のシリコン濃度が前記処理液の初期のシリコン濃度よりも低い予め設定された濃度となるように、回収した前記処理液に含まれるシリコンの一部を前記処理液に残す、請求項1に記載の基板処理装置。
- 前記貯留部に貯留された前記処理液のうち第1の量の処理液を前記混合部に供給する第1供給部と、
前記除去部によってシリコンが除去された前記処理液のうち第2の量の処理液を前記混合部に供給する第2供給部と
を備える、請求項1または2に記載の基板処理装置。 - 前記第1供給部および前記第2供給部は、
前記処理液のシリコン濃度の初期値に基づいて前記第1の量および前記第2の量が設定される、請求項3に記載の基板処理装置。 - 前記処理槽、前記第1供給部、前記第2供給部および前記混合部の組を複数備え、
前記貯留部は、複数の前記処理槽から排出された前記処理液を回収して貯留する、請求項3または4に記載の基板処理装置。 - 異なる複数のシリコン濃度に対応する複数の前記除去部を備える、請求項1~5のいずれか一つに記載の基板処理装置。
- 前記処理槽において前記処理液を加熱する第1加熱部と、
前記貯留部において前記処理液を加熱する第2加熱部と
を備える、請求項1~6のいずれか一つに記載の基板処理装置。 - 前記混合部において前記処理液を加熱する第3加熱部
を備える、請求項7に記載の基板処理装置。 - 薬液とシリコンとを含む処理液に基板を浸漬させて該基板のエッチング処理を行う処理槽から排出された前記処理液を回収して貯留する貯留工程と、
前記処理槽から排出された前記処理液の一部を回収し、回収した前記処理液に含まれるシリコンを一部を前記処理液に残して除去する除去工程と、
前記貯留工程において貯留した前記処理液と、前記除去工程においてシリコンが除去された前記処理液とを混合する混合工程と、
前記混合工程において混合された前記処理液を前記処理槽に戻す戻り工程と
を含む、処理液再利用方法。
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JP2018114963A JP7224117B2 (ja) | 2018-06-15 | 2018-06-15 | 基板処理装置および処理液再利用方法 |
TW108119115A TWI811374B (zh) | 2018-06-15 | 2019-06-03 | 基板處理裝置及處理液再利用方法 |
US16/438,580 US11430675B2 (en) | 2018-06-15 | 2019-06-12 | Substrate processing apparatus and processing liquid reuse method |
KR1020190070050A KR102677357B1 (ko) | 2018-06-15 | 2019-06-13 | 기판 처리 장치 및 처리액 재이용 방법 |
CN201910509553.2A CN110610875B (zh) | 2018-06-15 | 2019-06-13 | 基片处理装置和处理液再利用方法 |
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KR102583556B1 (ko) * | 2021-01-07 | 2023-10-10 | 세메스 주식회사 | 처리액 공급 장치 및 처리액 공급 장치의 고형 제거 방법 |
JP7270101B2 (ja) | 2021-08-06 | 2023-05-09 | クラウドサーカス株式会社 | 情報処理装置、情報処理方法、及びプログラム |
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