KR940007157A - 에칭제, 세정제 및 기기의 제조방법 - Google Patents

에칭제, 세정제 및 기기의 제조방법 Download PDF

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Publication number
KR940007157A
KR940007157A KR1019930020137A KR930020137A KR940007157A KR 940007157 A KR940007157 A KR 940007157A KR 1019930020137 A KR1019930020137 A KR 1019930020137A KR 930020137 A KR930020137 A KR 930020137A KR 940007157 A KR940007157 A KR 940007157A
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South Korea
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acid
oxo acid
xon
hydrogen
solution
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KR1019930020137A
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English (en)
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KR0140688B1 (ko
Inventor
히또시 세끼
사또시 미야자와
히로후미 후꾸이
야스히꼬 가사마
아끼라 아베
쓰또무 나까무라
타다히로 오오미
가즈꼬 오기노
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가다오까 마사다까
알프스 덴기 가부시끼가이샤
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Publication of KR940007157A publication Critical patent/KR940007157A/ko
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Detergent Compositions (AREA)

Abstract

본 발명은, 처리중에 발열이나 기체가 발생하지 않고, 승화성이 없고 장기간 안정하고, 특별한 배관을 사용할 필요없이, 그 위에 유기계의 용매를 사용하지 않기 때문에, 특별한 폐액처리의 필요성이 없는 에칭제를 제공한다. 이 에칭제는 용액중에 플루오르화수소산과, Mm(XOn)p (단, 식중에서 M은 수소, 1∼3가의 금속 또는 NH4이고, m은 1 또는 5이며, x는 할로겐원소이고, n은 3, 4, 또는 6이며, p는 1, 2 또는 3이다)으로 표시되는 옥소산 또는 옥소산염 화합물을 함유하는 용액이다.
본 발명의 에칭제는 세정제로도 사용될 수 있다.

Description

에칭제, 세정제 및 기기의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 실시예 1의 플루오르화수소산 농도와 에칭율과의 관계를 나타내는 도이고,
제6도는 본 발명의 실시예 1의 요오드산 농도와 에칭율과의 관계를 나타낸 도이고,
제7도는 본 발명의 실시예 1에 의한 가공상태를 나타내는 단면개략도이다.

Claims (8)

  1. 용액중에 플루오르화수소산과, Mm(XOn)p (단, 식중에서 M은 수소, 1∼3가의 금속 또는 NH4이고, m은 1 또는 5이며, x는 할로겐원소이고, n은 3, 4, 또는 6이며, p는 1, 2 또는 3이다)으로 표시되는 옥소산 또는 옥소산염 화합물을 함유하는 것을 특징으로 하는 에칭제.
  2. 제1항에 있어서, 상기 옥소산 또는 옥소산염 화합물이 요오드산인 것을 특징으로 하는 에칭제.
  3. 용액중에, 플루오르화수소산과, Mm(XOn)p (단, 식중에서 M은 수소, 1∼3가의 금속 또는 NH4이고, m은 1 또는 5이며, x는 할로겐원소이고, n은 3, 4, 또는 6이며, p는 1, 2 또는 3이다)로 표시되는 옥소산 또는 옥소산염 화합물을 함유하는 에칭제를 사용하여, 기기를 구성하는 부재의 에칭처리공정을 행하는 것을 특징으로 하는 기기의 제조방법.
  4. 제3항에 있어서, 상기 기기를 구성하는 부재가 규소인 것을 특징으로 하는 기기의 제조방법.
  5. 용액중에, 플루오르화수소산과, Mm(XOn)p (단, 식중에서 M은 수소, 1∼3가의 금속 또는 NH4이고, m은 1 또는 5이며, x는 할로겐원소이고, n은 3, 4, 또는 6이며, p는 1, 2 또는 3이다)로 표시되는 옥소산 또는 옥소산염 화합물을 함유하는 것을 특징으로 하는 세정제.
  6. 제5항에 있어서, 상기 옥소산 또는 옥소산염 화합물이 요오드산인 것을 특징으로 하는 세정제.
  7. 용액중에, 플루오르화수소산과, Mm(XOn)p (단, 식중에서 M은 수소, 1∼3가의 금속 또는 NH4이고, m은 1 또는 5이며, x는 할로겐원소이고, n은 3, 4, 또는 6이며, p는 1, 2 또는 3이다)로 표시되는 옥소산 또는 옥소산염 화합물을 함유하는 세정제를 사용하여, 기기를 구성하는 부재의 세정처리공정을 행하는 것을 특징으로 하는 기기의 제조방법.
  8. 제3항, 제4항 또는 제7항 중의 어느 한항에 있어서, 상기 옥소산 또는 옥소산엽 화합물이 요오드산인 것을 특징으로 하는 기기의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930020137A 1992-09-30 1993-09-28 에칭제, 세정제 및 기기의 제조방법 KR0140688B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4285338A JP2681433B2 (ja) 1992-09-30 1992-09-30 エッチング剤およびこのエッチング剤を使用するシリコン半導体部材のエッチング方法、および洗浄剤およびこの洗浄剤を使用するシリコン半導体部材の洗浄方法
JP92-285338 1992-09-30

Publications (2)

Publication Number Publication Date
KR940007157A true KR940007157A (ko) 1994-04-26
KR0140688B1 KR0140688B1 (ko) 1998-06-01

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US (1) US5409569A (ko)
JP (1) JP2681433B2 (ko)
KR (1) KR0140688B1 (ko)
TW (1) TW260810B (ko)

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JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
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JP4355201B2 (ja) * 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
JP4400281B2 (ja) * 2004-03-29 2010-01-20 信越半導体株式会社 シリコンウエーハの結晶欠陥評価方法
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Also Published As

Publication number Publication date
KR0140688B1 (ko) 1998-06-01
TW260810B (ko) 1995-10-21
US5409569A (en) 1995-04-25
JP2681433B2 (ja) 1997-11-26
JPH06200384A (ja) 1994-07-19

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