KR950007011A - 반도체 웨이퍼 처리방법 - Google Patents

반도체 웨이퍼 처리방법 Download PDF

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Publication number
KR950007011A
KR950007011A KR1019940019107A KR19940019107A KR950007011A KR 950007011 A KR950007011 A KR 950007011A KR 1019940019107 A KR1019940019107 A KR 1019940019107A KR 19940019107 A KR19940019107 A KR 19940019107A KR 950007011 A KR950007011 A KR 950007011A
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South Korea
Prior art keywords
aqueous solution
semiconductor wafer
hci
solution
oxidizing
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KR1019940019107A
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English (en)
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KR0163620B1 (ko
Inventor
유지 후카자와
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Publication of KR950007011A publication Critical patent/KR950007011A/ko
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Publication of KR0163620B1 publication Critical patent/KR0163620B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

[목적] 본 발명은 자연산화막의 성장을 억제함으로써, 반도체 췌이퍼 표면의 불순물을 효율좋게 제거한다.
[구성] HF수용액에 의해 반도체 웨이퍼(28)의 표면을 세정함으로써, 상기 반도체 웨이퍼(28)의 표면의 산화막을 제거한다. 다음에, 상기 HF, HCI, H2O2및 순수의 혼합액에 의해 상기 반도체 웨이퍼(28)의 표면을 처리함으로써, 상기 반도체 웨이퍼(28)의 표면에 부착되어 있는 Cu 등의 금속불순물을 제거하고 있다. 따라서, 반도체 웨이퍼의 표면에서의 자연산화막의 성장을 억제할 수 있고, 반도체 웨이퍼의 표면의 불순물을 효율좋게 제거할 수 있게 된다.

Description

반도체 웨이퍼 처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 따른 반도체 웨이퍼의 표면처리장치를 나타낸 구성도.
제2도(a)는 본 발명의 제1도에 도시한 반도체 웨이퍼의 표면처리장치에 있어서, 처리조에 약액을 공급하기 위한 제1∼제4밸브의 개폐조작을 나타낸 도면.
제2도(b)는 제2도(a)에 나타낸 바와 같이 약액을 공급한 경우의 처리조의 약액농도와 처리시간을 나타낸 도면.

Claims (4)

  1. HF수용액에 의해 반도체 웨이퍼의 표면을 처리함으로써, 상기 반도체 웨이퍼의 표면의 산화막을 제거하는 제1공정과, 상기 HF수용액, HCI수용액 및 산화성 수용액의 혼합액에 의해 상기 반도체 웨이퍼의 표면을 처리하는 상기 제1공정과 연속한 제2공정 및 상기 HCI수용액 및 상기 산화성 수용액의 혼합액에 의해 상기 반도체 웨이퍼의 표면을 처리하는 상기 제2공정에 연속한 제3공정을 구비한 것을 특징으로 하는 반도체 웨이퍼 처리방법.
  2. 제1항에 있어서, 상기 제2공정에서의 HF수용액의 농도는, 상기 제1공정에서의 HF수용액의 농도보다 낮은 것을 특징으로 하는 반도체 웨이퍼 처리방법.
  3. 제1항에 있어서, 상기 제2공정에서의 HF수용액은 상기 제1공정에서의 HF수용액의 일부이고, 상기 제3공정에서의 혼합액의 HCI수용액 및 산화성 수용액 각각은 상기 제2공정에서의 혼합액의 HCI수용액 및 산화성 수용액 각각의 일부인 것을 특징으로 하는 반도체 웨이퍼 처리방법.
  4. 제1항에 있어서, 상기 HF수용액, 상기 HCI수용액 및 상기 산화성 수용액 각각의 농도는 처리조에 HF수용액, HCI수용액, 산화성 수용액 및 순수 각각을 소정의 양만큼 공급하는 것과, 상기 처리조로부터 HF수용액, HCI수용액 및 산화성 수용액 각각을 배액함으로써 제어되는 것을 특징으로 하는 반도체 웨이퍼 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940019107A 1993-08-02 1994-08-02 반도체 웨이퍼 처리방법 KR0163620B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-191163 1993-08-02
JP19116393A JP3338134B2 (ja) 1993-08-02 1993-08-02 半導体ウエハ処理方法

Publications (2)

Publication Number Publication Date
KR950007011A true KR950007011A (ko) 1995-03-21
KR0163620B1 KR0163620B1 (ko) 1999-02-01

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US (1) US5470393A (ko)
JP (1) JP3338134B2 (ko)
KR (1) KR0163620B1 (ko)

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Also Published As

Publication number Publication date
KR0163620B1 (ko) 1999-02-01
US5470393A (en) 1995-11-28
JP3338134B2 (ja) 2002-10-28
JPH0745580A (ja) 1995-02-14

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