KR950007011A - 반도체 웨이퍼 처리방법 - Google Patents

반도체 웨이퍼 처리방법 Download PDF

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Publication number
KR950007011A
KR950007011A KR1019940019107A KR19940019107A KR950007011A KR 950007011 A KR950007011 A KR 950007011A KR 1019940019107 A KR1019940019107 A KR 1019940019107A KR 19940019107 A KR19940019107 A KR 19940019107A KR 950007011 A KR950007011 A KR 950007011A
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KR
South Korea
Prior art keywords
aqueous solution
semiconductor wafer
hci
solution
oxidizing
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KR1019940019107A
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English (en)
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KR0163620B1 (ko
Inventor
유지 후카자와
Original Assignee
사토 후미오
가부시키가이샤 도시바
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Publication of KR950007011A publication Critical patent/KR950007011A/ko
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Publication of KR0163620B1 publication Critical patent/KR0163620B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

[목적] 본 발명은 자연산화막의 성장을 억제함으로써, 반도체 췌이퍼 표면의 불순물을 효율좋게 제거한다.
[구성] HF수용액에 의해 반도체 웨이퍼(28)의 표면을 세정함으로써, 상기 반도체 웨이퍼(28)의 표면의 산화막을 제거한다. 다음에, 상기 HF, HCI, H2O2및 순수의 혼합액에 의해 상기 반도체 웨이퍼(28)의 표면을 처리함으로써, 상기 반도체 웨이퍼(28)의 표면에 부착되어 있는 Cu 등의 금속불순물을 제거하고 있다. 따라서, 반도체 웨이퍼의 표면에서의 자연산화막의 성장을 억제할 수 있고, 반도체 웨이퍼의 표면의 불순물을 효율좋게 제거할 수 있게 된다.

Description

반도체 웨이퍼 처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 따른 반도체 웨이퍼의 표면처리장치를 나타낸 구성도.
제2도(a)는 본 발명의 제1도에 도시한 반도체 웨이퍼의 표면처리장치에 있어서, 처리조에 약액을 공급하기 위한 제1∼제4밸브의 개폐조작을 나타낸 도면.
제2도(b)는 제2도(a)에 나타낸 바와 같이 약액을 공급한 경우의 처리조의 약액농도와 처리시간을 나타낸 도면.

Claims (4)

  1. HF수용액에 의해 반도체 웨이퍼의 표면을 처리함으로써, 상기 반도체 웨이퍼의 표면의 산화막을 제거하는 제1공정과, 상기 HF수용액, HCI수용액 및 산화성 수용액의 혼합액에 의해 상기 반도체 웨이퍼의 표면을 처리하는 상기 제1공정과 연속한 제2공정 및 상기 HCI수용액 및 상기 산화성 수용액의 혼합액에 의해 상기 반도체 웨이퍼의 표면을 처리하는 상기 제2공정에 연속한 제3공정을 구비한 것을 특징으로 하는 반도체 웨이퍼 처리방법.
  2. 제1항에 있어서, 상기 제2공정에서의 HF수용액의 농도는, 상기 제1공정에서의 HF수용액의 농도보다 낮은 것을 특징으로 하는 반도체 웨이퍼 처리방법.
  3. 제1항에 있어서, 상기 제2공정에서의 HF수용액은 상기 제1공정에서의 HF수용액의 일부이고, 상기 제3공정에서의 혼합액의 HCI수용액 및 산화성 수용액 각각은 상기 제2공정에서의 혼합액의 HCI수용액 및 산화성 수용액 각각의 일부인 것을 특징으로 하는 반도체 웨이퍼 처리방법.
  4. 제1항에 있어서, 상기 HF수용액, 상기 HCI수용액 및 상기 산화성 수용액 각각의 농도는 처리조에 HF수용액, HCI수용액, 산화성 수용액 및 순수 각각을 소정의 양만큼 공급하는 것과, 상기 처리조로부터 HF수용액, HCI수용액 및 산화성 수용액 각각을 배액함으로써 제어되는 것을 특징으로 하는 반도체 웨이퍼 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940019107A 1993-08-02 1994-08-02 반도체 웨이퍼 처리방법 KR0163620B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-191163 1993-08-02
JP19116393A JP3338134B2 (ja) 1993-08-02 1993-08-02 半導体ウエハ処理方法

Publications (2)

Publication Number Publication Date
KR950007011A true KR950007011A (ko) 1995-03-21
KR0163620B1 KR0163620B1 (ko) 1999-02-01

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US (1) US5470393A (ko)
JP (1) JP3338134B2 (ko)
KR (1) KR0163620B1 (ko)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
US5681398A (en) * 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
US5868856A (en) * 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
US5868862A (en) * 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
JP3274389B2 (ja) * 1996-08-12 2002-04-15 株式会社東芝 半導体基板の洗浄方法
US6129091A (en) * 1996-10-04 2000-10-10 Taiwan Semiconductor Manfacturing Company Method for cleaning silicon wafers with deep trenches
US6033994A (en) * 1997-05-16 2000-03-07 Sony Corporation Apparatus and method for deprocessing a multi-layer semiconductor device
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
KR19990009195A (ko) * 1997-07-08 1999-02-05 윤종용 반도체 소자 제조용 습식 세정장치
US6158447A (en) 1997-09-09 2000-12-12 Tokyo Electron Limited Cleaning method and cleaning equipment
US5837662A (en) * 1997-12-12 1998-11-17 Memc Electronic Materials, Inc. Post-lapping cleaning process for silicon wafers
JPH11204478A (ja) * 1998-01-19 1999-07-30 Mitsubishi Electric Corp 半導体基板の洗浄方法およびその洗浄装置
US5964953A (en) * 1998-05-26 1999-10-12 Memc Electronics Materials, Inc. Post-etching alkaline treatment process
DE69916728T2 (de) * 1998-08-28 2005-04-28 Mitsubishi Materials Corp. Verfahren zur Reinigung eines Halbleitersubstrats
JP3189892B2 (ja) * 1998-09-17 2001-07-16 日本電気株式会社 半導体基板の洗浄方法及び洗浄液
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
TW426874B (en) * 1998-10-14 2001-03-21 United Microelectronics Corp Method for cleaning a semiconductor wafer
US6037271A (en) * 1998-10-21 2000-03-14 Fsi International, Inc. Low haze wafer treatment process
TW399264B (en) * 1998-11-27 2000-07-21 United Microelectronics Corp Method for reducing the fluorine content on metal pad surface
JP3177973B2 (ja) 1999-01-28 2001-06-18 日本電気株式会社 半導体装置の製造方法
US6261845B1 (en) * 1999-02-25 2001-07-17 Cfmt, Inc. Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
TW466728B (en) * 1999-05-21 2001-12-01 Cfmt Inc Methods for wet processing electronic components having copper containing surfaces
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6162302A (en) * 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
IL152376A0 (en) 2000-04-25 2003-05-29 Tokyo Electron Ltd Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6620743B2 (en) 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
US20040016450A1 (en) * 2002-01-25 2004-01-29 Bertram Ronald Thomas Method for reducing the formation of contaminants during supercritical carbon dioxide processes
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
AU2003217547A1 (en) * 2002-02-15 2003-09-09 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
EP1481284A4 (en) 2002-03-04 2006-10-25 Tokyo Electron Ltd METHOD FOR PASSIVATING LOW DIELECTRIC MATERIALS IN WELDING PROCESSING
CN1642665A (zh) * 2002-03-22 2005-07-20 东京毅力科创株式会社 用超临界工艺清除杂质
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
JP4248989B2 (ja) * 2003-10-10 2009-04-02 大日本スクリーン製造株式会社 高圧処理装置および高圧処理方法
FR2864457B1 (fr) * 2003-12-31 2006-12-08 Commissariat Energie Atomique Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium.
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US20060185693A1 (en) * 2005-02-23 2006-08-24 Richard Brown Cleaning step in supercritical processing
KR100639710B1 (ko) * 2005-03-17 2006-10-30 세메스 주식회사 약액 혼합 공급 방법
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
JP6860447B2 (ja) * 2017-02-15 2021-04-14 キオクシア株式会社 基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264374A (en) * 1978-09-25 1981-04-28 International Business Machines Corporation Cleaning process for p-type silicon surface
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
US5221423A (en) * 1986-05-20 1993-06-22 Fujitsu Limited Process for cleaning surface of semiconductor substrate
US5129955A (en) * 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
CA2059841A1 (en) * 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
US5308400A (en) * 1992-09-02 1994-05-03 United Microelectronics Corporation Room temperature wafer cleaning process

Also Published As

Publication number Publication date
JP3338134B2 (ja) 2002-10-28
US5470393A (en) 1995-11-28
JPH0745580A (ja) 1995-02-14
KR0163620B1 (ko) 1999-02-01

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