KR940016526A - 반도체 세정방법 및 세정용액 - Google Patents

반도체 세정방법 및 세정용액 Download PDF

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Publication number
KR940016526A
KR940016526A KR1019920025455A KR920025455A KR940016526A KR 940016526 A KR940016526 A KR 940016526A KR 1019920025455 A KR1019920025455 A KR 1019920025455A KR 920025455 A KR920025455 A KR 920025455A KR 940016526 A KR940016526 A KR 940016526A
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KR
South Korea
Prior art keywords
semiconductor
cleaning
solution
cleaning tank
ions
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Application number
KR1019920025455A
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English (en)
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KR960002763B1 (ko
Inventor
이창재
김형태
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019920025455A priority Critical patent/KR960002763B1/ko
Priority to DE4340589A priority patent/DE4340589A1/de
Priority to JP5321478A priority patent/JPH076993A/ja
Priority to US08/172,463 priority patent/US5567244A/en
Publication of KR940016526A publication Critical patent/KR940016526A/ko
Application granted granted Critical
Publication of KR960002763B1 publication Critical patent/KR960002763B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
    • C01G3/04—Halides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 64M 디램급에서 요구하는 109atoms/㎠의 금속이온 특히 Cu 이온을 제어할 수 있게 하며, HF+H2O2용액에서 발행하는 파티클(particle) 문제 및 불순물 문제를 해결하기 위한 반도체 세정방법으로서, HF 용액이 든 세정조에 N2버브링방식과 동일하게 구멍 뚫린 석영관을 삽입한 후 원하는 양의 O3을 공급하여 HF+O2세정액으로 세정하는 방법이다.

Description

반도체 세정방법 및 세정용액
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. HF 용액을 담은 세정조에 뚫린 석영관을 통하여 소정량의 O3을 세정조내에 공급하면서 반도체를 세정조에 놓어 세정하는 반도체 세정방법.
  2. 세정액을 넣은 세정조에 반도체를 넣어서 반도체표면에 있는 Cu 금속이온을 제거하는 반도체 세정방법에 있어서, O3를 공급하여 발생기산소가 생성되고, Cu와 반응하여 CuO를 생성시키고, 생성된 CuO에 2 HF가 반응하여 CuF2와 H2O가 되게 하므로써 Cu 이온을 제거하는 것이 특징인 반도체 세정방법.
    참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920025455A 1992-12-24 1992-12-24 반도체 세정방법 및 세정용액 KR960002763B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019920025455A KR960002763B1 (ko) 1992-12-24 1992-12-24 반도체 세정방법 및 세정용액
DE4340589A DE4340589A1 (de) 1992-12-24 1993-11-29 Verfahren zur Reinigung von Halbleiterbauelementen
JP5321478A JPH076993A (ja) 1992-12-24 1993-12-21 半導体素子の洗浄方法
US08/172,463 US5567244A (en) 1992-12-24 1993-12-23 Process for cleaning semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920025455A KR960002763B1 (ko) 1992-12-24 1992-12-24 반도체 세정방법 및 세정용액

Publications (2)

Publication Number Publication Date
KR940016526A true KR940016526A (ko) 1994-07-23
KR960002763B1 KR960002763B1 (ko) 1996-02-26

Family

ID=19346630

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920025455A KR960002763B1 (ko) 1992-12-24 1992-12-24 반도체 세정방법 및 세정용액

Country Status (4)

Country Link
US (1) US5567244A (ko)
JP (1) JPH076993A (ko)
KR (1) KR960002763B1 (ko)
DE (1) DE4340589A1 (ko)

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Publication number Priority date Publication date Assignee Title
JP2760418B2 (ja) * 1994-07-29 1998-05-28 住友シチックス株式会社 半導体ウエーハの洗浄液及びこれを用いた半導体ウエーハの洗浄方法
US5565707A (en) * 1994-10-31 1996-10-15 International Business Machines Corporation Interconnect structure using a Al2 Cu for an integrated circuit chip
JPH08172068A (ja) * 1994-12-19 1996-07-02 Fujitsu Ltd 半導体基板の洗浄方法及び半導体装置の製造方法
DE59508757D1 (de) * 1995-03-10 2000-11-02 Astec Halbleitertechnologie Gm Verfahren und Vorrichtung zum Reinigen von Siliziumscheiben
US6532976B1 (en) 1995-07-10 2003-03-18 Lg Semicon Co., Ltd. Semiconductor wafer cleaning apparatus
DE19655219C2 (de) * 1996-04-24 2003-11-06 Steag Micro Tech Gmbh Vorrichtung zum Behandeln von Substraten in einem Fluid-Behälter
DE19701971C1 (de) * 1997-01-22 1998-11-26 Invent Gmbh Entwicklung Neuer Technologien Verfahren und Vorrichtung zur Reinigung von Substratoberflächen
US7264680B2 (en) * 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
JPH11121417A (ja) 1997-10-09 1999-04-30 Mitsubishi Electric Corp 半導体基板の処理システムおよび処理方法
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6440852B1 (en) * 1999-01-26 2002-08-27 Agere Systems Guardian Corp. Integrated circuit including passivated copper interconnection lines and associated manufacturing methods
FR2790768A1 (fr) * 1999-03-08 2000-09-15 Commissariat Energie Atomique Procede d'attaque chimique du cuivre pour composants microelectroniques
JP3907151B2 (ja) 2000-01-25 2007-04-18 株式会社東芝 半導体装置の製造方法
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6350689B1 (en) 2001-04-23 2002-02-26 Chartered Semiconductor Manufacturing Ltd. Method to remove copper contamination by using downstream oxygen and chelating agent plasma
US6656852B2 (en) 2001-12-06 2003-12-02 Texas Instruments Incorporated Method for the selective removal of high-k dielectrics
DE102011000861A1 (de) * 2011-02-22 2012-08-23 Rena Gmbh Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens
US9627534B1 (en) * 2015-11-20 2017-04-18 United Microelectronics Corp. Semiconductor MOS device having a dense oxide film on a spacer
US9999907B2 (en) * 2016-04-01 2018-06-19 Applied Materials, Inc. Cleaning process that precipitates yttrium oxy-flouride
CN105931947A (zh) * 2016-05-20 2016-09-07 浙江晶科能源有限公司 一种硅片的清洗方法
CN111112219B (zh) * 2020-01-22 2021-10-29 河南职业技术学院 一种高效汽车零件浸泡冲洗装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
SU1089674A1 (ru) * 1982-08-11 1984-04-30 Институт электроники АН БССР Способ очистки полупроводниковых пластин и устройство дл его осуществлени
JP2733771B2 (ja) * 1988-07-29 1998-03-30 日本テキサス・インスツルメンツ株式会社 液体による処理装置
US5232511A (en) * 1990-05-15 1993-08-03 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous mixed acid vapors
JPH04128010A (ja) * 1990-09-19 1992-04-28 Kyoto Handotai Kk シリコン単結晶の切断方法
JP2984348B2 (ja) * 1990-10-05 1999-11-29 株式会社東芝 半導体ウェーハの処理方法
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns
JPH04263086A (ja) * 1991-02-18 1992-09-18 Mitsubishi Electric Corp シリコン基板のエッチング方法
WO1992022084A1 (en) * 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity

Also Published As

Publication number Publication date
DE4340589A1 (de) 1994-06-30
US5567244A (en) 1996-10-22
KR960002763B1 (ko) 1996-02-26
JPH076993A (ja) 1995-01-10

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