KR970077287A - 반도체재료의 처리방법 - Google Patents
반도체재료의 처리방법 Download PDFInfo
- Publication number
- KR970077287A KR970077287A KR1019970017714A KR19970017714A KR970077287A KR 970077287 A KR970077287 A KR 970077287A KR 1019970017714 A KR1019970017714 A KR 1019970017714A KR 19970017714 A KR19970017714 A KR 19970017714A KR 970077287 A KR970077287 A KR 970077287A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor material
- liquid
- processing
- liquid tank
- material according
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Abstract
본 발명은 액조내에서 반도체재료를 처리하는 방법에 관한 것이다. 그 처리는 캐비테이션(cavitation)의 발생이 액조내에서 현저하다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부도면은 본 발명에 의한 방법을 실시하기에 적합한 장치의 개략단면도이다.
Claims (6)
- 액조내에서의 반도체재료의 처리방법에 있어서, 캐비테이션(cavitation)의 발생이 액조내에서 이루어짐을 특징으로 하는 반도체재료의 처리방법.
- 제1항에 있어서, 그 액조내에서 캐비테이션이 발생하도록 함을 특징으로 하는 반도체재료의 처리방법.
- 제2항에 있어서, 반도체재료는 그 분사액이 용기의 경계면에 투과할 수 있는 용기내에 설정되어 있음을 특징으로 하는 반도체재료의 처리방법.
- 제1항에 있어서, 반도체재료를 처리할때, 액조에서의 액체 일부가 새로운 액체로 대치되고, 또 그 액체일부는 액조에서 제거시켜 여과하여 그 여액을 액조로 복귀하도록 함을 특징으로 하는 반도체재료의 처리방법.
- 제1항에 있어서, 물, 세척제수용액 및 수용성에칭액(etchants)으로 구성되는 그룹에서 선정된 액체가 사용됨을 특징으로 하는 반도체재료의 처리방법.
- 제1항에 있어서, 반도체재료가 단결정성 실리콘 및 다결정성 실리콘으로 이루어진 그룹에서 선정됨을 특징으로 하는 반도체재료의 처리방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE96-19618974.8 | 1996-05-10 | ||
DE19618974A DE19618974A1 (de) | 1996-05-10 | 1996-05-10 | Verfahren zur Behandlung von Halbleitermaterial |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077287A true KR970077287A (ko) | 1997-12-12 |
Family
ID=7794008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970017714A KR970077287A (ko) | 1996-05-10 | 1997-05-08 | 반도체재료의 처리방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5820688A (ko) |
JP (1) | JPH1041271A (ko) |
KR (1) | KR970077287A (ko) |
DE (1) | DE19618974A1 (ko) |
IT (1) | IT1290599B1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6118289A (en) * | 1997-03-10 | 2000-09-12 | Canon Kabushiki Kaisha | Cleaning method and cleaning device and cleaning tool for board electrical-test probes, and board electrical-test device and method |
US6502591B1 (en) * | 2000-06-08 | 2003-01-07 | Semitool, Inc. | Surface tension effect dryer with porous vessel walls |
US8021483B2 (en) * | 2002-02-20 | 2011-09-20 | Hemlock Semiconductor Corporation | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
US6874713B2 (en) | 2002-08-22 | 2005-04-05 | Dow Corning Corporation | Method and apparatus for improving silicon processing efficiency |
GB2418347A (en) * | 2004-09-23 | 2006-03-29 | Univ Sheffield | Fluid agitation or cavitation cleansing of particles |
JP4559288B2 (ja) * | 2005-04-28 | 2010-10-06 | 京セラキンセキ株式会社 | エッチング装置 |
JP4762822B2 (ja) | 2006-08-03 | 2011-08-31 | 東京エレクトロン株式会社 | 薬液混合方法および薬液混合装置 |
DE102007040851A1 (de) * | 2007-08-29 | 2009-03-05 | Wacker Chemie Ag | Verfahren zum Reinigen von polykristallinem Silicium |
WO2010073725A1 (ja) * | 2008-12-26 | 2010-07-01 | 三菱マテリアル株式会社 | 多結晶シリコンの洗浄方法及び洗浄装置並びに多結晶シリコンの製造方法 |
US9242340B1 (en) * | 2013-03-12 | 2016-01-26 | Western Digital Technologies, Inc. | Method to stress relieve a magnetic recording head transducer utilizing ultrasonic cavitation |
US20220184670A1 (en) * | 2020-12-16 | 2022-06-16 | The Boeing Company | Flexible cavitation apparatus |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3031363A (en) * | 1959-09-24 | 1962-04-24 | Sylvania Electric Prod | Method and apparatus for treating bodies of semiconductor material |
US3997358A (en) * | 1976-02-19 | 1976-12-14 | Motorola, Inc. | Cleaning process for semiconductor die |
GB2005147B (en) * | 1977-09-15 | 1982-03-10 | Rolls Royce | Fluid operated nozzles for generation of vibrations in liquid |
DE3317286A1 (de) * | 1983-05-11 | 1984-11-22 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur reinigung von silicium durch saeureeinwirkung |
WO1987006862A1 (en) * | 1986-05-16 | 1987-11-19 | Eastman Kodak Company | Ultrasonic cleaning method and apparatus |
US5217163A (en) * | 1990-12-18 | 1993-06-08 | Nlb Corp. | Rotating cavitating jet nozzle |
US5327921A (en) * | 1992-03-05 | 1994-07-12 | Tokyo Electron Limited | Processing vessel for a wafer washing system |
US5316591A (en) * | 1992-08-10 | 1994-05-31 | Hughes Aircraft Company | Cleaning by cavitation in liquefied gas |
US5384989A (en) * | 1993-04-12 | 1995-01-31 | Shibano; Yoshihide | Method of ultrasonically grinding workpiece |
DE4316626A1 (de) * | 1993-05-18 | 1994-11-24 | Wacker Chemitronic | Verfahren und Vorrichtung zur Zerkleinerung von Halbleitermaterial |
JP2504916B2 (ja) * | 1993-09-20 | 1996-06-05 | 株式会社芝浦製作所 | 基板洗浄装置 |
US5656097A (en) * | 1993-10-20 | 1997-08-12 | Verteq, Inc. | Semiconductor wafer cleaning system |
US5368054A (en) * | 1993-12-17 | 1994-11-29 | International Business Machines Corporation | Ultrasonic jet semiconductor wafer cleaning apparatus |
WO1996022844A1 (en) * | 1995-01-27 | 1996-08-01 | Trustees Of Boston University | Acoustic coaxing methods and apparatus |
-
1996
- 1996-05-10 DE DE19618974A patent/DE19618974A1/de not_active Withdrawn
-
1997
- 1997-03-19 JP JP9066570A patent/JPH1041271A/ja active Pending
- 1997-04-25 US US08/846,151 patent/US5820688A/en not_active Expired - Fee Related
- 1997-04-30 IT IT97RM000253A patent/IT1290599B1/it active IP Right Grant
- 1997-05-08 KR KR1019970017714A patent/KR970077287A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE19618974A1 (de) | 1997-11-13 |
US5820688A (en) | 1998-10-13 |
JPH1041271A (ja) | 1998-02-13 |
ITRM970253A1 (it) | 1998-10-30 |
ITRM970253A0 (it) | 1997-04-30 |
IT1290599B1 (it) | 1998-12-10 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |