KR910002707A - 건식에칭장치, 건식에칭방법 및 거기서 사용하기 위한 무수플루오르화수소 기체 발생기 - Google Patents
건식에칭장치, 건식에칭방법 및 거기서 사용하기 위한 무수플루오르화수소 기체 발생기 Download PDFInfo
- Publication number
- KR910002707A KR910002707A KR1019890010285A KR890010285A KR910002707A KR 910002707 A KR910002707 A KR 910002707A KR 1019890010285 A KR1019890010285 A KR 1019890010285A KR 890010285 A KR890010285 A KR 890010285A KR 910002707 A KR910002707 A KR 910002707A
- Authority
- KR
- South Korea
- Prior art keywords
- hydrogen fluoride
- anhydrous hydrogen
- dry etching
- gas
- gas generator
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 title claims 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 title claims 10
- 239000007789 gas Substances 0.000 title claims 9
- 238000000034 method Methods 0.000 title claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 239000000919 ceramic Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 건식에칭장치의 개략도,
제2도는 니켈로 만든 챔버를 나타내는 그림,
제3도는 실리카로 만든 잎모양의 챔버를 나타내는 그림.
Claims (5)
- 기판이 놓여지는 처리 챔버와 희석된 무수 플루오르화 수소 기체 발생기로 이루어지고, 어떤 금속, 실리칸, 세라믹 또는 그것들의 결합물로 구성된 건식에칭장치에 있어서, 상기한 처리 챔버가 스테인레스강 또는 니켈과 같은 금속으로된 파이프 라인을 통해 상기한 무수 플루오르화 수소 기체 발생기에 연결되는 것을 특징으로 하는 장치.
- 제1항에 있어서, 불활성 기체 공급 파이프가 상기한 처리 챔버와 상기한 희석된 무수 플루오르화 수소기체 발생기사이의 분기점에 연결되어 있는 것을 특징으로 하는 건식에칭장치.
- 기판의 표면에 형성된 필름중에서 적어도 하나를 에칭하는 방법에 있어서, 기체상 방법으로 처리되도록 습기없이 무수불활성 기체를 챔버에 놓여진 기판에 계속해서 가하고, 상기한 기판에 무수 불활성 기체를 계속해서 공급하는 동안 희석된 무수 플루오르화 수소 기체를 일정한 시간동안 기판표면에 공급하는 단계로 이루어지는 것을 특징으로 하는 방법.
- 제3항에 있어서, 희석된 무수 플루오르화 수소 기체속에 함유된 플루오르화 수소의 농도를 변화시킴으로써 다른 필름들은 남겨두고 플루오르화수소의 반응하는 필름중 적어도 하나가 에칭되는 것을 특징으로하는 방법.
- 불활성 기체용의 유입구와 유출구가 있는 금속용기, 상기한 금속용기를 소정의 온도까지 냉각시키는 냉각기로 이루어지고, 상기한 불활성 기체용의 유입구와 유출구 둘다가 상기한 금속용기를 채운 액화 무수 플루오르화 수소기체의 액체 수준에 접하지 않도록 놓여 있는 것을 특징으로 하는 희석된 무수 플루오르화수소 기체 발생기.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-181224 | 1988-07-20 | ||
JP63-181226 | 1988-07-20 | ||
JP181226 | 1988-07-20 | ||
JP63181224A JPH02175883A (ja) | 1988-07-20 | 1988-07-20 | 無水フッ化水素希釈ガス発生装置 |
JP63181226A JPH0231419A (ja) | 1988-07-20 | 1988-07-20 | ドライエッチング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910002707A true KR910002707A (ko) | 1991-02-26 |
KR950013065B1 KR950013065B1 (ko) | 1995-10-24 |
Family
ID=26500486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890010285A KR950013065B1 (ko) | 1988-07-20 | 1989-07-20 | 건식에칭장치, 건식에칭방법 및 거기서 사용하기 위한 무수 플루오르화수소 기체 발생기 |
Country Status (4)
Country | Link |
---|---|
US (2) | US5073232A (ko) |
EP (2) | EP0604393B1 (ko) |
KR (1) | KR950013065B1 (ko) |
DE (3) | DE68927726T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100986237B1 (ko) * | 2003-07-29 | 2010-10-07 | 유태승 | 전원플러그용 파이프형 전극봉의 제조방법 |
Families Citing this family (34)
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JPH04128010A (ja) * | 1990-09-19 | 1992-04-28 | Kyoto Handotai Kk | シリコン単結晶の切断方法 |
JPH04296021A (ja) * | 1991-03-26 | 1992-10-20 | Mitsubishi Electric Corp | 半導体基板の表面処理方法 |
WO1992022084A1 (en) * | 1991-05-21 | 1992-12-10 | Advantage Production Technology, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
JP2632262B2 (ja) * | 1991-08-20 | 1997-07-23 | 大日本スクリーン製造株式会社 | シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法 |
JP2896268B2 (ja) * | 1992-05-22 | 1999-05-31 | 三菱電機株式会社 | 半導体基板の表面処理装置及びその制御方法 |
US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
JP2833946B2 (ja) * | 1992-12-08 | 1998-12-09 | 日本電気株式会社 | エッチング方法および装置 |
US5913149A (en) * | 1992-12-31 | 1999-06-15 | Micron Technology, Inc. | Method for fabricating stacked layer silicon nitride for low leakage and high capacitance |
US5348627A (en) * | 1993-05-12 | 1994-09-20 | Georgia Tech Reserach Corporation | Process and system for the photoelectrochemical etching of silicon in an anhydrous environment |
US5425845A (en) * | 1993-06-09 | 1995-06-20 | Texas Instruments Incorporated | Method for selective removal of hard trench masks |
US5534066A (en) * | 1993-10-29 | 1996-07-09 | International Business Machines Corporation | Fluid delivery apparatus having an infrared feedline sensor |
US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
US5635102A (en) * | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
JP3297291B2 (ja) * | 1995-03-10 | 2002-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
US5972790A (en) * | 1995-06-09 | 1999-10-26 | Tokyo Electron Limited | Method for forming salicides |
KR0170902B1 (ko) * | 1995-12-29 | 1999-03-30 | 김주용 | 반도체 소자의 제조방법 |
US5735962A (en) * | 1996-01-11 | 1998-04-07 | S3 Service Support Specialties, Inc. | Silicon substrate cleaning method and apparatus |
US6095158A (en) * | 1997-02-06 | 2000-08-01 | Lam Research Corporation | Anhydrous HF in-situ cleaning process of semiconductor processing chambers |
AT405655B (de) * | 1997-03-26 | 1999-10-25 | Sez Semiconduct Equip Zubehoer | Verfahren und vorrichtung zum einseitigen bearbeiten scheibenförmiger gegenstände |
US6126847A (en) * | 1997-11-24 | 2000-10-03 | Micron Technology Inc. | High selectivity etching process for oxides |
US6740247B1 (en) | 1999-02-05 | 2004-05-25 | Massachusetts Institute Of Technology | HF vapor phase wafer cleaning and oxide etching |
TW476996B (en) * | 2000-02-28 | 2002-02-21 | Mitsubishi Material Silicon | Semiconductor manufacturing method and semiconductor manufacturing apparatus |
US20030098038A1 (en) * | 2001-11-26 | 2003-05-29 | Siegele Stephen H. | System and method for on-site generation and distribution of fluorine for fabrication processes |
US20030121796A1 (en) * | 2001-11-26 | 2003-07-03 | Siegele Stephen H | Generation and distribution of molecular fluorine within a fabrication facility |
US20090001524A1 (en) * | 2001-11-26 | 2009-01-01 | Siegele Stephen H | Generation and distribution of a fluorine gas |
US20040151656A1 (en) * | 2001-11-26 | 2004-08-05 | Siegele Stephen H. | Modular molecular halogen gas generation system |
US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
JP3953361B2 (ja) * | 2002-05-08 | 2007-08-08 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
KR100487556B1 (ko) * | 2002-12-30 | 2005-05-03 | 삼성전자주식회사 | 반도체 박막 증착장치 |
US20070098624A1 (en) * | 2005-10-27 | 2007-05-03 | Honeywell International Inc. | Andhydrous hydrogen fluoride composition and method of producing the same |
WO2021011101A1 (en) * | 2019-07-18 | 2021-01-21 | Tokyo Electron Limited | Gas phase etch with controllable etch selectivity of metals |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4083941A (en) * | 1977-04-18 | 1978-04-11 | E. I. Du Pont De Nemours And Company | Purification of anhydrous hydrogen fluoride |
JPS5688320A (en) * | 1979-12-21 | 1981-07-17 | Fujitsu Ltd | Gas etching method |
US4307180A (en) * | 1980-08-22 | 1981-12-22 | International Business Machines Corp. | Process of forming recessed dielectric regions in a monocrystalline silicon substrate |
DE3129868A1 (de) * | 1981-07-29 | 1983-02-17 | Hoechst Ag, 6000 Frankfurt | "verfahren zur herstellung von flusssaeure aus fluor- und chlorhaltigen kohlenstoffverbindungen bei hoeheren temperaturen" |
JPS59166675A (ja) * | 1983-03-11 | 1984-09-20 | Fujitsu Ltd | エツチング装置 |
JPS61148820A (ja) * | 1984-12-24 | 1986-07-07 | Hitachi Ltd | 処理方法 |
ATE113757T1 (de) * | 1985-08-28 | 1994-11-15 | Fsi Int Inc | Verfahren und vorrichtung zum entfernen von schichten von substraten. |
US4749440A (en) * | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
-
1989
- 1989-07-18 EP EP94101109A patent/EP0604393B1/en not_active Expired - Lifetime
- 1989-07-18 EP EP89307253A patent/EP0354669B1/en not_active Expired - Lifetime
- 1989-07-18 DE DE68927726T patent/DE68927726T2/de not_active Expired - Lifetime
- 1989-07-18 DE DE68928435T patent/DE68928435T2/de not_active Expired - Lifetime
- 1989-07-18 DE DE198989307253T patent/DE354669T1/de active Pending
- 1989-07-20 KR KR1019890010285A patent/KR950013065B1/ko not_active IP Right Cessation
- 1989-12-21 US US07/454,575 patent/US5073232A/en not_active Expired - Lifetime
-
1991
- 1991-04-08 US US07/682,412 patent/US5100495A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100986237B1 (ko) * | 2003-07-29 | 2010-10-07 | 유태승 | 전원플러그용 파이프형 전극봉의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
EP0354669A3 (en) | 1990-11-14 |
DE68928435D1 (de) | 1997-12-11 |
DE354669T1 (de) | 1990-11-08 |
DE68927726D1 (de) | 1997-03-13 |
EP0604393A2 (en) | 1994-06-29 |
EP0354669B1 (en) | 1997-01-29 |
EP0354669A2 (en) | 1990-02-14 |
EP0604393A3 (en) | 1994-08-10 |
DE68927726T2 (de) | 1997-07-17 |
DE68928435T2 (de) | 1998-03-05 |
KR950013065B1 (ko) | 1995-10-24 |
EP0604393B1 (en) | 1997-11-05 |
US5100495A (en) | 1992-03-31 |
US5073232A (en) | 1991-12-17 |
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