KR910003767A - 열처리 장치 - Google Patents

열처리 장치 Download PDF

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Publication number
KR910003767A
KR910003767A KR1019900011411A KR900011411A KR910003767A KR 910003767 A KR910003767 A KR 910003767A KR 1019900011411 A KR1019900011411 A KR 1019900011411A KR 900011411 A KR900011411 A KR 900011411A KR 910003767 A KR910003767 A KR 910003767A
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KR
South Korea
Prior art keywords
heat treatment
treatment apparatus
susceptor
substrate
guard ring
Prior art date
Application number
KR1019900011411A
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English (en)
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KR0134035B1 (ko
Inventor
세이지 무라카미
유우지 카이
스스무 카토오
Original Assignee
고다까 토시오
도오교오 에레구토론 가부시끼가이샤
이가미 효오
테루. 바리안 가부시끼가이샤
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Application filed by 고다까 토시오, 도오교오 에레구토론 가부시끼가이샤, 이가미 효오, 테루. 바리안 가부시끼가이샤 filed Critical 고다까 토시오
Publication of KR910003767A publication Critical patent/KR910003767A/ko
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Publication of KR0134035B1 publication Critical patent/KR0134035B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

열처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 열처리되는 기판을 포위하는 처리공간을 규정하는 수단과, 상기 처리공간을 감압분위기로 하는 수단과, 상기 처리공간내에서 상기 기판의 종표면과 접촉하는 제1표면을 가지며, 제1 표면을 통하여 상기 기판에 열을 부여하도록 채택되는 서셉터와, 상기 서뎁더를 가열하는 가열수단 및, 상기 서셉터의 제1표면의 주위의 제2표면과 접촉하는 뒷표면을 갖즌 가드링을 포함하여 구성되며, 상기 가드링과 상기 기판의 사이에서 상기 서셉터의 표면이 실질적으로 노출되지 않고, 또한 상기 가드링의 앞표면의 온도와 상기 기판의 주표면의 온도가 근사한 것을 특징으로 하는 열처리장치.
  2. 제1항에 있어서, 상기 서셉터의 제1표면과 상기 가드링의 앞표면에 대략 한면으로 정렬하는 열처리장치.
  3. 제1항에 있어서, 상기 기판의 주표면과 상기 가드린의 앞표면에 대략 한면으로 정렬하는 열처리장치.
  4. 제1항에 있어서, 상기 가드링이 상기 서셉터에 나사 멈춤되는 열처리장치.
  5. 제1항에 있어서, 상기 가드링이 상기 서셉터의 단턱부에 끼워넣어지는 열처리장치.
  6. 제1항에 있어서, 상기 가드링이 클램프부재에 의하여 상기 서셉터에 부착되는 열처리장치.
  7. 제1항에 있어서, 열처리 장치가 베이킹장치인 열처리장치.
  8. 제1항에 있어서, 열처리 장치가 어니일링 장치인 열처리장치.
  9. 열처리되는 기판을 포위하는 처리공간을 규정하는 수단과, 상기 처리공간을 감압분위기로 하는 수단과, 상기 처리공간내에, 상기 기판의 주표면상에서 반응하는 소정의 처리가스를 공급하는 수단과, 상기 처리공간내에서 상기 기판의 종표면과 접촉하는 제1표면을 가지며, 제1표면을 통하여 상기 기판에 열을 부여하도록 채택되는 서셉터와, 상기 서셉트를 가열하는 가열수단 및, 상기 서셉터의 제1표면의 주위를 제2표면과 접촉하는 뒷표면을 가지는 가드링을 포함하여 구성되며, 상기 가드링과 상기 기판의 사이에서 상기 서셉터의 표면이 실질적으로 노출되지 않고, 또한 상기 가르딜의 앞표면의 온도와 상기 기판의 주표면의 온도가 근사한 것을 특징으로 하는 열처리장치.
  10. 제9항에 있어서, 열처리장치는 화학적 기상성장 막형성 장치인 열처리장치.
  11. 제9항에 있어서, 열처리장치는 에칭장치인 열처리장치.
  12. 제9항에 있어서, 열처리장치는 에칭 장치인 열처리장치.
  13. 제9항에 있어서, 열처리장치는 이온주입 장치인 열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900011411A 1989-07-26 1990-07-26 열처리 장치 KR0134035B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-1193409 1989-07-26
JP19340989 1989-07-26
JP89-193409 1989-07-26

Publications (2)

Publication Number Publication Date
KR910003767A true KR910003767A (ko) 1991-02-28
KR0134035B1 KR0134035B1 (ko) 1998-04-20

Family

ID=16307481

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011411A KR0134035B1 (ko) 1989-07-26 1990-07-26 열처리 장치

Country Status (3)

Country Link
US (1) US5088697A (ko)
JP (2) JPH03150365A (ko)
KR (1) KR0134035B1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710499B2 (ja) * 1991-10-01 1998-02-10 富士写真フイルム株式会社 感光材料乾燥装置
JP2003233080A (ja) * 2002-02-05 2003-08-22 Lg Phillips Lcd Co Ltd 合着装置及びこれを用いた液晶表示装置の製造方法
JP4599816B2 (ja) * 2003-08-01 2010-12-15 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP4622890B2 (ja) * 2006-03-02 2011-02-02 セイコーエプソン株式会社 ウエハ処理装置
JP4751750B2 (ja) * 2006-03-30 2011-08-17 積水化学工業株式会社 プラズマ処理装置のステージ構造
JP5191373B2 (ja) * 2008-12-19 2013-05-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハの製造方法及び製造装置
CN104508172B (zh) * 2012-11-13 2016-10-12 三菱重工业株式会社 真空蒸镀装置
DE102013012082A1 (de) * 2013-07-22 2015-01-22 Aixtron Se Vorrichtung zum thermischen Behandeln eines Halbleitersubstrates, insbesondere zum Aufbringen einer Beschichtung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341371A (en) * 1966-05-31 1967-09-12 Cecil A Baumgartner Electrostatic method for treating metals
US4195820A (en) * 1978-04-10 1980-04-01 Pyreflex Corporation Precise thermal processing apparatus
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치

Also Published As

Publication number Publication date
JPH03148829A (ja) 1991-06-25
JPH03150365A (ja) 1991-06-26
US5088697A (en) 1992-02-18
KR0134035B1 (ko) 1998-04-20

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