KR910003767A - 열처리 장치 - Google Patents
열처리 장치 Download PDFInfo
- Publication number
- KR910003767A KR910003767A KR1019900011411A KR900011411A KR910003767A KR 910003767 A KR910003767 A KR 910003767A KR 1019900011411 A KR1019900011411 A KR 1019900011411A KR 900011411 A KR900011411 A KR 900011411A KR 910003767 A KR910003767 A KR 910003767A
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- treatment apparatus
- susceptor
- substrate
- guard ring
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims 23
- 239000000758 substrate Substances 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (13)
- 열처리되는 기판을 포위하는 처리공간을 규정하는 수단과, 상기 처리공간을 감압분위기로 하는 수단과, 상기 처리공간내에서 상기 기판의 종표면과 접촉하는 제1표면을 가지며, 제1 표면을 통하여 상기 기판에 열을 부여하도록 채택되는 서셉터와, 상기 서뎁더를 가열하는 가열수단 및, 상기 서셉터의 제1표면의 주위의 제2표면과 접촉하는 뒷표면을 갖즌 가드링을 포함하여 구성되며, 상기 가드링과 상기 기판의 사이에서 상기 서셉터의 표면이 실질적으로 노출되지 않고, 또한 상기 가드링의 앞표면의 온도와 상기 기판의 주표면의 온도가 근사한 것을 특징으로 하는 열처리장치.
- 제1항에 있어서, 상기 서셉터의 제1표면과 상기 가드링의 앞표면에 대략 한면으로 정렬하는 열처리장치.
- 제1항에 있어서, 상기 기판의 주표면과 상기 가드린의 앞표면에 대략 한면으로 정렬하는 열처리장치.
- 제1항에 있어서, 상기 가드링이 상기 서셉터에 나사 멈춤되는 열처리장치.
- 제1항에 있어서, 상기 가드링이 상기 서셉터의 단턱부에 끼워넣어지는 열처리장치.
- 제1항에 있어서, 상기 가드링이 클램프부재에 의하여 상기 서셉터에 부착되는 열처리장치.
- 제1항에 있어서, 열처리 장치가 베이킹장치인 열처리장치.
- 제1항에 있어서, 열처리 장치가 어니일링 장치인 열처리장치.
- 열처리되는 기판을 포위하는 처리공간을 규정하는 수단과, 상기 처리공간을 감압분위기로 하는 수단과, 상기 처리공간내에, 상기 기판의 주표면상에서 반응하는 소정의 처리가스를 공급하는 수단과, 상기 처리공간내에서 상기 기판의 종표면과 접촉하는 제1표면을 가지며, 제1표면을 통하여 상기 기판에 열을 부여하도록 채택되는 서셉터와, 상기 서셉트를 가열하는 가열수단 및, 상기 서셉터의 제1표면의 주위를 제2표면과 접촉하는 뒷표면을 가지는 가드링을 포함하여 구성되며, 상기 가드링과 상기 기판의 사이에서 상기 서셉터의 표면이 실질적으로 노출되지 않고, 또한 상기 가르딜의 앞표면의 온도와 상기 기판의 주표면의 온도가 근사한 것을 특징으로 하는 열처리장치.
- 제9항에 있어서, 열처리장치는 화학적 기상성장 막형성 장치인 열처리장치.
- 제9항에 있어서, 열처리장치는 에칭장치인 열처리장치.
- 제9항에 있어서, 열처리장치는 에칭 장치인 열처리장치.
- 제9항에 있어서, 열처리장치는 이온주입 장치인 열처리장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP89-193409 | 1989-07-26 | ||
JP19340989 | 1989-07-26 | ||
JP1-1193409 | 1989-07-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910003767A true KR910003767A (ko) | 1991-02-28 |
KR0134035B1 KR0134035B1 (ko) | 1998-04-20 |
Family
ID=16307481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900011411A KR0134035B1 (ko) | 1989-07-26 | 1990-07-26 | 열처리 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5088697A (ko) |
JP (2) | JPH03150365A (ko) |
KR (1) | KR0134035B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2710499B2 (ja) * | 1991-10-01 | 1998-02-10 | 富士写真フイルム株式会社 | 感光材料乾燥装置 |
CN100456088C (zh) * | 2002-02-05 | 2009-01-28 | 乐金显示有限公司 | Lcd粘接机和用这种粘接机制造lcd的方法 |
JP4599816B2 (ja) * | 2003-08-01 | 2010-12-15 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
JP4622890B2 (ja) * | 2006-03-02 | 2011-02-02 | セイコーエプソン株式会社 | ウエハ処理装置 |
JP4751750B2 (ja) * | 2006-03-30 | 2011-08-17 | 積水化学工業株式会社 | プラズマ処理装置のステージ構造 |
JP5191373B2 (ja) * | 2008-12-19 | 2013-05-08 | Sumco Techxiv株式会社 | エピタキシャルウェーハの製造方法及び製造装置 |
CN104508172B (zh) * | 2012-11-13 | 2016-10-12 | 三菱重工业株式会社 | 真空蒸镀装置 |
DE102013012082A1 (de) * | 2013-07-22 | 2015-01-22 | Aixtron Se | Vorrichtung zum thermischen Behandeln eines Halbleitersubstrates, insbesondere zum Aufbringen einer Beschichtung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3341371A (en) * | 1966-05-31 | 1967-09-12 | Cecil A Baumgartner | Electrostatic method for treating metals |
US4195820A (en) * | 1978-04-10 | 1980-04-01 | Pyreflex Corporation | Precise thermal processing apparatus |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
-
1990
- 1990-07-09 JP JP2181337A patent/JPH03150365A/ja active Pending
- 1990-07-16 US US07/552,897 patent/US5088697A/en not_active Expired - Lifetime
- 1990-07-18 JP JP2189806A patent/JPH03148829A/ja active Pending
- 1990-07-26 KR KR1019900011411A patent/KR0134035B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0134035B1 (ko) | 1998-04-20 |
US5088697A (en) | 1992-02-18 |
JPH03148829A (ja) | 1991-06-25 |
JPH03150365A (ja) | 1991-06-26 |
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Payment date: 20051208 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |