KR910019112A - 반도체 웨이퍼의 처리방법 및 장치 - Google Patents

반도체 웨이퍼의 처리방법 및 장치 Download PDF

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KR910019112A
KR910019112A KR1019910005527A KR910005527A KR910019112A KR 910019112 A KR910019112 A KR 910019112A KR 1019910005527 A KR1019910005527 A KR 1019910005527A KR 910005527 A KR910005527 A KR 910005527A KR 910019112 A KR910019112 A KR 910019112A
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semiconductor wafer
processing
temperature
wafer
measuring means
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KR1019910005527A
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KR940010643B1 (ko
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기요시 나시모도
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야스다 스스무
니찌덴 아네루바 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1002—Methods of surface bonding and/or assembly therefor with permanent bending or reshaping or surface deformation of self sustaining lamina
    • Y10T156/1007—Running or continuous length work
    • Y10T156/1015—Folding

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Radiation Pyrometers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음

Description

반도체 웨이퍼의 처리방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예의 블록도.

Claims (13)

  1. 반도체 웨이퍼 표면에 대하여 스패터, 에칭, 또는 침전 등의 처리를 행하는 방법에 있어서, 처리전과 처리중에 반도체 웨이퍼의 이면에서 이 반도체 웨이퍼의 온도를 측정하고, 미리 정한 온도범위에서 처리를 행하는 것을 특징으로 하는 반도체 웨이퍼의 처리방법.
  2. 제1항에 있어서, 반도체 웨이퍼의 온도 측정은 열전쌍열 온도계를 이용하여 무접촉으로 행하는 것을 특징으로 하는 반도체 웨이퍼의 처리방법.
  3. 제2항에 있어서, 열전쌍열 온도계를 이용한 온도측정은 반도체 웨이퍼를 방사율로 보정하는 것을 특징으로 하는 반도체 웨이퍼의 처리방법.
  4. 제1항에 있어서, 반도체 웨이퍼의 측정한 온도와, 미리 정한 처리개시 온도를 비교하고, 미리 정한 처리개시 온도에 도달했을 때, 반도체 웨이퍼의 처리를 개시하는 것을 특징으로 하는 반도체 웨이퍼의 처리방법.
  5. 제1항에 있어서, 반도체 웨이퍼의 측정한 온도와, 미리 정한 처리중의 상한온도 및 하한온도를 비교하고, 상기 상한온도롸 하한온도의 온도범위에서 벗어날 때, 경보를 발하거나, 또는 반도체 웨이퍼의 처리를 정지하는 것을 특징으로 하는 반도체 웨이퍼의 처리방법.
  6. 처리실 내에 웨이퍼 홀더가 설치되고, 이 웨이퍼 홀더에 지지된 반도체 웨이퍼 표면에 대한 스패터, 에칭, 또는 침전 등의 처리기구를 구비한 반도체 허리장치에 있어서, 상기 웨이퍼 홀더에서 반도체 웨이퍼의 이면을 투시가능케하는 투시공이 형성되고, 이 투시공의 축선상에 비접촉 온도 측정 수단이 웨이퍼 이면과 대향 가능케 설치되어 있는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  7. 제6항에 있어서, 비접촉 온도측정 수단이 열전쌍열 온도계인 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  8. 제6항에 있어서, 웨이퍼 홀더에는 가열수단 및/또는 냉각수단이 설치되어 있는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  9. 제6항에 있어서, 웨이퍼 홀더에 반도체 웨이퍼를 반송하는 반송로에, 방사율계가 반도체 웨이퍼의 이면과 대향 가능케 설치되어 있고, 이 방상율계의 출력이 열전쌍열 온도계에 보정성분으로서 부여되어 있는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  10. 제6항에 있어서, 비접촉 온도 측정수단의 출력은 웨이퍼 홀더의 가열 및/또는 냉각수단의 제어장치에 제어 입력으로서 부여되어 있는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  11. 제6항에 있어서, 비접촉 온도측정수단의 출력은 반도체 웨이퍼의 처리개시 지령수단의 입력으로서 부여되는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  12. 제6항에 있어서, 비접촉 온도 측정수단의 출력은 반도체 웨이퍼의 온도폭 관리수단의 입력으로서 부여되어 있는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
  13. 제6항에 있어서, 비접촉 온도측정 수단의 출력은 경보장치의 입력으로서 부여되어 있는 것을 특징으로 하는 반도체 웨이퍼의 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910005527A 1990-04-09 1991-04-06 반도체 웨이퍼의 처리방법 및 장치 KR940010643B1 (ko)

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Application Number Priority Date Filing Date Title
JP3789190 1990-04-09
JP2-37891 1990-04-09

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KR910019112A true KR910019112A (ko) 1991-11-30
KR940010643B1 KR940010643B1 (ko) 1994-10-24

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US (2) US5147498A (ko)
EP (1) EP0452773A3 (ko)
KR (1) KR940010643B1 (ko)
CA (1) CA2039845A1 (ko)

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KR100353021B1 (ko) * 1998-07-06 2002-09-16 니뽄 가이시 가부시키가이샤 정전 척의 파티클 발생 저감 방법
KR100363077B1 (ko) * 1995-11-20 2003-02-11 삼성전자 주식회사 반도체 제조장치의 온도 확인장치

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KR19980024481A (ko) * 1996-09-12 1998-07-06 조셉 제이. 스위니 적응성 온도 제어기 및 그 동작 방법
KR100353021B1 (ko) * 1998-07-06 2002-09-16 니뽄 가이시 가부시키가이샤 정전 척의 파티클 발생 저감 방법

Also Published As

Publication number Publication date
US5334251A (en) 1994-08-02
EP0452773A3 (en) 1992-06-10
CA2039845A1 (en) 1991-10-10
US5147498A (en) 1992-09-15
KR940010643B1 (ko) 1994-10-24
EP0452773A2 (en) 1991-10-23

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