AU2001277271A1 - Low temperature cathodic magnetron sputtering - Google Patents

Low temperature cathodic magnetron sputtering

Info

Publication number
AU2001277271A1
AU2001277271A1 AU2001277271A AU7727101A AU2001277271A1 AU 2001277271 A1 AU2001277271 A1 AU 2001277271A1 AU 2001277271 A AU2001277271 A AU 2001277271A AU 7727101 A AU7727101 A AU 7727101A AU 2001277271 A1 AU2001277271 A1 AU 2001277271A1
Authority
AU
Australia
Prior art keywords
low temperature
magnetron sputtering
cathodic magnetron
temperature cathodic
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001277271A
Inventor
Michael L. Marshall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ATF Technologies Inc
Original Assignee
ATF Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATF Technologies Inc filed Critical ATF Technologies Inc
Publication of AU2001277271A1 publication Critical patent/AU2001277271A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3438Electrodes other than cathode
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2001277271A 2000-07-27 2001-07-27 Low temperature cathodic magnetron sputtering Abandoned AU2001277271A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62644000A 2000-07-27 2000-07-27
US09626440 2000-07-27
PCT/US2001/041442 WO2002010471A1 (en) 2000-07-27 2001-07-27 Low temperature cathodic magnetron sputtering

Publications (1)

Publication Number Publication Date
AU2001277271A1 true AU2001277271A1 (en) 2002-02-13

Family

ID=24510377

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001277271A Abandoned AU2001277271A1 (en) 2000-07-27 2001-07-27 Low temperature cathodic magnetron sputtering

Country Status (3)

Country Link
US (1) US6699374B2 (en)
AU (1) AU2001277271A1 (en)
WO (1) WO2002010471A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1585999A4 (en) * 2002-08-02 2008-09-17 E A Fischione Instr Inc Methods and apparatus for preparing specimens for microscopy
DE10323258A1 (en) * 2003-05-23 2004-12-23 Applied Films Gmbh & Co. Kg Magnetron sputter cathode has cooling plate on vacuum side located between substrate plate and sputter target
JPWO2006097994A1 (en) * 2005-03-14 2008-08-21 株式会社薄膜プロセス Sputtering equipment
EP1999776A1 (en) * 2006-03-28 2008-12-10 NV Bekaert SA Coating apparatus
US20080011601A1 (en) * 2006-07-14 2008-01-17 Applied Materials, Inc. Cooled anodes
US20080149145A1 (en) * 2006-12-22 2008-06-26 Visichem Technology, Ltd Method and apparatus for optical surface cleaning by liquid cleaner as foam
US9136086B2 (en) * 2008-12-08 2015-09-15 General Plasma, Inc. Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith
JP5364172B2 (en) * 2009-11-10 2013-12-11 キヤノンアネルバ株式会社 Film forming method using sputtering apparatus and sputtering apparatus
US8993501B2 (en) 2011-08-01 2015-03-31 Visichem Technology, Ltd. Sprayable gel cleaner for optical and electronic surfaces
JP2016536472A (en) * 2013-11-05 2016-11-24 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Radio frequency (RF) sputter deposition source, deposition apparatus and assembly method thereof
CN104651790B (en) * 2015-02-12 2017-10-20 常州大学 A kind of metallic resistance rate Cu/Cu2O semiconductor disperse laminated films and preparation method thereof
CN106884150B (en) * 2017-04-24 2023-06-09 爱瑞德科技(大连)有限公司 Suspension anode and magnetron sputtering device with same
CN110055501A (en) * 2019-04-17 2019-07-26 厦门阿匹斯智能制造系统有限公司 A kind of method of semidry method continuous type PVD plated film plastic metal temperature control

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031424A (en) * 1971-09-07 1977-06-21 Telic Corporation Electrode type glow discharge apparatus
US3803019A (en) * 1971-10-07 1974-04-09 Hewlett Packard Co Sputtering system
US4166018A (en) 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US4719968A (en) * 1981-01-15 1988-01-19 Speros Phillip C Heat exchanger
JPS62174376A (en) * 1986-01-28 1987-07-31 Fujitsu Ltd Sputtering device
US5155561A (en) 1988-01-05 1992-10-13 Massachusetts Institute Of Technology Permeable base transistor having an electrode configuration for heat dissipation
CA2039845A1 (en) 1990-04-09 1991-10-10 Kiyoshi Nashimoto Method and apparatus for processing substrate
DE4042287C2 (en) 1990-12-31 1999-10-28 Leybold Ag Device for reactive dusting of electrically insulating material
US5126033A (en) 1990-12-31 1992-06-30 Leybold Aktiengesellschaft Process and apparatus for reactively coating a substrate

Also Published As

Publication number Publication date
US6699374B2 (en) 2004-03-02
US20020063054A1 (en) 2002-05-30
WO2002010471A1 (en) 2002-02-07

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