AU2001277271A1 - Low temperature cathodic magnetron sputtering - Google Patents
Low temperature cathodic magnetron sputteringInfo
- Publication number
- AU2001277271A1 AU2001277271A1 AU2001277271A AU7727101A AU2001277271A1 AU 2001277271 A1 AU2001277271 A1 AU 2001277271A1 AU 2001277271 A AU2001277271 A AU 2001277271A AU 7727101 A AU7727101 A AU 7727101A AU 2001277271 A1 AU2001277271 A1 AU 2001277271A1
- Authority
- AU
- Australia
- Prior art keywords
- low temperature
- magnetron sputtering
- cathodic magnetron
- temperature cathodic
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62644000A | 2000-07-27 | 2000-07-27 | |
US09626440 | 2000-07-27 | ||
PCT/US2001/041442 WO2002010471A1 (en) | 2000-07-27 | 2001-07-27 | Low temperature cathodic magnetron sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001277271A1 true AU2001277271A1 (en) | 2002-02-13 |
Family
ID=24510377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001277271A Abandoned AU2001277271A1 (en) | 2000-07-27 | 2001-07-27 | Low temperature cathodic magnetron sputtering |
Country Status (3)
Country | Link |
---|---|
US (1) | US6699374B2 (en) |
AU (1) | AU2001277271A1 (en) |
WO (1) | WO2002010471A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1585999A4 (en) * | 2002-08-02 | 2008-09-17 | E A Fischione Instr Inc | Methods and apparatus for preparing specimens for microscopy |
DE10323258A1 (en) * | 2003-05-23 | 2004-12-23 | Applied Films Gmbh & Co. Kg | Magnetron sputter cathode has cooling plate on vacuum side located between substrate plate and sputter target |
JPWO2006097994A1 (en) * | 2005-03-14 | 2008-08-21 | 株式会社薄膜プロセス | Sputtering equipment |
EP1999776A1 (en) * | 2006-03-28 | 2008-12-10 | NV Bekaert SA | Coating apparatus |
US20080011601A1 (en) * | 2006-07-14 | 2008-01-17 | Applied Materials, Inc. | Cooled anodes |
US20080149145A1 (en) * | 2006-12-22 | 2008-06-26 | Visichem Technology, Ltd | Method and apparatus for optical surface cleaning by liquid cleaner as foam |
US9136086B2 (en) * | 2008-12-08 | 2015-09-15 | General Plasma, Inc. | Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith |
JP5364172B2 (en) * | 2009-11-10 | 2013-12-11 | キヤノンアネルバ株式会社 | Film forming method using sputtering apparatus and sputtering apparatus |
US8993501B2 (en) | 2011-08-01 | 2015-03-31 | Visichem Technology, Ltd. | Sprayable gel cleaner for optical and electronic surfaces |
JP2016536472A (en) * | 2013-11-05 | 2016-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Radio frequency (RF) sputter deposition source, deposition apparatus and assembly method thereof |
CN104651790B (en) * | 2015-02-12 | 2017-10-20 | 常州大学 | A kind of metallic resistance rate Cu/Cu2O semiconductor disperse laminated films and preparation method thereof |
CN106884150B (en) * | 2017-04-24 | 2023-06-09 | 爱瑞德科技(大连)有限公司 | Suspension anode and magnetron sputtering device with same |
CN110055501A (en) * | 2019-04-17 | 2019-07-26 | 厦门阿匹斯智能制造系统有限公司 | A kind of method of semidry method continuous type PVD plated film plastic metal temperature control |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4031424A (en) * | 1971-09-07 | 1977-06-21 | Telic Corporation | Electrode type glow discharge apparatus |
US3803019A (en) * | 1971-10-07 | 1974-04-09 | Hewlett Packard Co | Sputtering system |
US4166018A (en) | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
US4719968A (en) * | 1981-01-15 | 1988-01-19 | Speros Phillip C | Heat exchanger |
JPS62174376A (en) * | 1986-01-28 | 1987-07-31 | Fujitsu Ltd | Sputtering device |
US5155561A (en) | 1988-01-05 | 1992-10-13 | Massachusetts Institute Of Technology | Permeable base transistor having an electrode configuration for heat dissipation |
CA2039845A1 (en) | 1990-04-09 | 1991-10-10 | Kiyoshi Nashimoto | Method and apparatus for processing substrate |
DE4042287C2 (en) | 1990-12-31 | 1999-10-28 | Leybold Ag | Device for reactive dusting of electrically insulating material |
US5126033A (en) | 1990-12-31 | 1992-06-30 | Leybold Aktiengesellschaft | Process and apparatus for reactively coating a substrate |
-
2001
- 2001-07-27 WO PCT/US2001/041442 patent/WO2002010471A1/en active Application Filing
- 2001-07-27 AU AU2001277271A patent/AU2001277271A1/en not_active Abandoned
- 2001-07-30 US US09/918,248 patent/US6699374B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6699374B2 (en) | 2004-03-02 |
US20020063054A1 (en) | 2002-05-30 |
WO2002010471A1 (en) | 2002-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2002231352A1 (en) | Sputtering target | |
AU2002211705A1 (en) | Sputter targets | |
AU2002217261A1 (en) | Magnetron sputtering apparatus | |
AU4314399A (en) | Contoured sputtering target | |
AU2003278984A1 (en) | High-power pulsed magnetron sputtering | |
AU2001274784A1 (en) | Pulsed highly ionized magnetron sputtering | |
AU2003296501A1 (en) | Magnetron sputtering systems including anodic gas distribution systems | |
AU2002249878A1 (en) | Methods of forming sputtering targets | |
IL158993A0 (en) | Recessed sputter target | |
AU2002242092A1 (en) | Focused magnetron sputtering system | |
IL158994A0 (en) | Ring-type sputtering target | |
EP1116800A4 (en) | Sputtering target | |
AU2001277271A1 (en) | Low temperature cathodic magnetron sputtering | |
AU2001272643A1 (en) | Magnetron sputtering | |
IL157013A0 (en) | Ultrafine-grain-copper-base sputter targets | |
AU1207101A (en) | Planar magnetron sputtering apparatus | |
AU2002211706A1 (en) | Sputter targets | |
AU2001275184A1 (en) | Sputtering target | |
AU2001285051A1 (en) | Sputtering targets | |
AU2002228716A1 (en) | Sputtering target assemblies | |
AU2002323633A1 (en) | Flat magnetron sputter apparatus | |
AU6524300A (en) | Sputtering process | |
SG97941A1 (en) | Extended life sputter targets | |
AU2192199A (en) | Magnetron | |
AU2000248274A1 (en) | Conical sputtering target |