KR890015384A - 고체형 재질의 처리방법 - Google Patents
고체형 재질의 처리방법 Download PDFInfo
- Publication number
- KR890015384A KR890015384A KR1019890003613A KR890003613A KR890015384A KR 890015384 A KR890015384 A KR 890015384A KR 1019890003613 A KR1019890003613 A KR 1019890003613A KR 890003613 A KR890003613 A KR 890003613A KR 890015384 A KR890015384 A KR 890015384A
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- South Korea
- Prior art keywords
- temperature
- solid material
- processing
- detecting means
- treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 , 본 발명의 1실시예에 관한 CVD 처리에 사용되는 CVD장치를 나타낸 도면, 제 2 도는, 제 1 도에 나타낸 장치를 사용한 처리에서, 웨이퍼의 온도제어를 더어모 커플만을 사용하여 행하였을 경우의, 더어모 커플 및 파이로미터에 의하여 검출된 온도를 나타낸 도면, 제 3 도는, 본 발명에서 웨이퍼의 온도제어를 위한 블록다이어그램.
Claims (7)
- 제 1 의 온도제어가 행하여지는 승온공정과 제 2 의 온도제어가 행하여지는 처리공정과를 구비하고, 승온공정과 처리공정에서 피처리체의 적외선 방사율이 달라지도록 하는 처리를 행하는 방법으로서, 승온공정에서는 비접촉형 온도검지수단에 의하여 피처리체의 온도가 검지되고, 그것에 따라 제1의 온도제어가 행하여지며, 처리공정에서는 접촉형 온도검지수단에 의하여 피처리체의 온도가 검지되고, 그것에 따라 제 2 의 온도제어가 행하여지는 고체형 재질의 처리방법.
- 제 1 항에 있어서, 상기 피처리체는 반도체 기관인 고체형 재질의 처리방법.
- 제 1 항에 있어서, 상기 승온공정의 승온속도는, 5℃/초 이상인 고체형 재질의 처리방법.
- 제 1 항에 있어서. 상기 피처리체의 가열은, 적외선 램프(8)의 조사 또는 전기 히이터에 의하여 행하여지는 고체형 재질의 처리방법.
- 제 1 항에 있어서, 상기 비접촉형 온도검지 수단은, 파이로미터(16)인 고체형 재질의 처리방법.
- 제 1 항에 있어서, 상기 접촉형 온도검지수단은, 더어모커플인 고체형 재질의 처리방법.
- 제 1 항에 있어서, 상기 처리공정에서의 처리방법은, 증착, 스퍼터링, 더어말 CVD, 플라즈마에칭, 스퍼터에칭, 오존에슁 및 플라즈마에슁으로 이루어지는 군중에서 선택된 한가지의 종류의 고체형 재질의 처리방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7299588 | 1988-03-25 | ||
JP72995 | 1988-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890015384A true KR890015384A (ko) | 1989-10-30 |
KR970005443B1 KR970005443B1 (ko) | 1997-04-16 |
Family
ID=13505504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890003613A KR970005443B1 (ko) | 1988-03-25 | 1989-03-22 | 기판의 처리방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4913790A (ko) |
KR (1) | KR970005443B1 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH083146B2 (ja) * | 1989-10-16 | 1996-01-17 | 富士通株式会社 | 薄膜形成方法 |
CA2039845A1 (en) * | 1990-04-09 | 1991-10-10 | Kiyoshi Nashimoto | Method and apparatus for processing substrate |
JP2892787B2 (ja) * | 1990-07-20 | 1999-05-17 | 東京エレクトロン株式会社 | 電気信号の抽出方法 |
US5439877A (en) * | 1990-12-07 | 1995-08-08 | E. I. Du Pont De Nemours And Company | Process for depositing high temperature superconducting oxide thin films |
US5815396A (en) * | 1991-08-12 | 1998-09-29 | Hitachi, Ltd. | Vacuum processing device and film forming device and method using same |
US5200023A (en) * | 1991-08-30 | 1993-04-06 | International Business Machines Corp. | Infrared thermographic method and apparatus for etch process monitoring and control |
US5227336A (en) * | 1991-12-27 | 1993-07-13 | Small Power Communication Systems Research Laboratories Co., Ltd. | Tungsten chemical vapor deposition method |
US5654904A (en) * | 1994-05-18 | 1997-08-05 | Micron Technology, Inc. | Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine |
US5705232A (en) * | 1994-09-20 | 1998-01-06 | Texas Instruments Incorporated | In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing |
US5766426A (en) * | 1995-02-14 | 1998-06-16 | Sputtered Films, Inc. | Apparatus for, and method of, depositing a film on a substrate |
JP3852980B2 (ja) | 1996-05-21 | 2006-12-06 | キヤノンアネルバ株式会社 | 薄膜作成方法及びスパッタリング装置 |
CA2267531A1 (en) * | 1996-10-02 | 1998-04-09 | Duke University | Electrode for the electrochemical detection of nitric oxide |
KR100551980B1 (ko) | 1997-11-03 | 2006-02-20 | 에이에스엠 아메리카, 인코포레이티드 | 저질량 지지체를 이용한 웨이퍼의 처리방법 및 장치 |
JP2002500087A (ja) * | 1997-12-23 | 2002-01-08 | ユナキス・バルツェルス・アクチェンゲゼルシャフト | 真空処理装置 |
US6191399B1 (en) | 2000-02-01 | 2001-02-20 | Asm America, Inc. | System of controlling the temperature of a processing chamber |
US6596973B1 (en) | 2002-03-07 | 2003-07-22 | Asm America, Inc. | Pyrometer calibrated wafer temperature estimator |
US6818864B2 (en) | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
GB0500980D0 (en) * | 2005-01-18 | 2005-02-23 | Point 35 Microstructures Ltd | Improved method and apparatus for monitoring a microstructure etching process |
JP4625495B2 (ja) * | 2005-03-30 | 2011-02-02 | 三益半導体工業株式会社 | スピンエッチング方法及び装置 |
MX2009009425A (es) * | 2009-09-03 | 2011-03-11 | Inst Tecnologico Estudios Superiores Monterrey | Proceso para realizar el revestimiento de peliculas delgadas multicapa y multicomponente sobre substratos de diversos materiales. |
WO2011138239A1 (en) * | 2010-05-06 | 2011-11-10 | Oerlikon Solar Ag, Truebbach | Plasma reactor |
JP5734081B2 (ja) * | 2010-10-18 | 2015-06-10 | 株式会社日立国際電気 | 基板処理装置、基板処理装置の温度制御方法、及び基板処理装置の加熱方法 |
US9885123B2 (en) | 2011-03-16 | 2018-02-06 | Asm America, Inc. | Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow |
JP6430870B2 (ja) * | 2015-03-20 | 2018-11-28 | 東京エレクトロン株式会社 | クランプ装置及びこれを用いた基板搬入出装置、並びに基板処理装置 |
CN107924816B (zh) | 2015-06-26 | 2021-08-31 | 东京毅力科创株式会社 | 具有含硅减反射涂层或硅氧氮化物相对于不同膜或掩模的可控蚀刻选择性的气相蚀刻 |
WO2016210301A1 (en) | 2015-06-26 | 2016-12-29 | Tokyo Electron Limited | Gas phase etching system and method |
US10297567B2 (en) * | 2015-12-18 | 2019-05-21 | Intel Corporation | Thermocompression bonding using plasma gas |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3480535A (en) * | 1966-07-07 | 1969-11-25 | Trw Inc | Sputter depositing semiconductor material and forming semiconductor junctions through a molten layer |
US4172020A (en) * | 1978-05-24 | 1979-10-23 | Gould Inc. | Method and apparatus for monitoring and controlling sputter deposition processes |
US4324631A (en) * | 1979-07-23 | 1982-04-13 | Spin Physics, Inc. | Magnetron sputtering of magnetic materials |
US4396478A (en) * | 1981-06-15 | 1983-08-02 | Aizenshtein Anatoly G | Method of control of chemico-thermal treatment of workpieces in glow discharge and a device for carrying out the method |
US4407708A (en) * | 1981-08-06 | 1983-10-04 | Eaton Corporation | Method for operating a magnetron sputtering apparatus |
JPS6022635A (ja) * | 1983-07-18 | 1985-02-05 | Kawasaki Steel Corp | 放射型温度計測方法 |
JPS6060060A (ja) * | 1983-09-12 | 1985-04-06 | 株式会社日立製作所 | 鉄道車両の扉開閉装置 |
BG41744A1 (en) * | 1984-11-26 | 1987-08-14 | Savov | Method for control of chimico= thermic processing of work- pieces with glowing dicharge in medium of processing gas and device for implementing this method |
US4687544A (en) * | 1985-05-17 | 1987-08-18 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
JPH0685841B2 (ja) * | 1986-09-08 | 1994-11-02 | 株式会社日立製作所 | 腐食性溶液蒸発缶 |
-
1989
- 1989-03-21 US US07/326,689 patent/US4913790A/en not_active Expired - Lifetime
- 1989-03-22 KR KR1019890003613A patent/KR970005443B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970005443B1 (ko) | 1997-04-16 |
US4913790A (en) | 1990-04-03 |
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