KR920015486A - 반도체 제조장치 및 그 제어방법 - Google Patents
반도체 제조장치 및 그 제어방법 Download PDFInfo
- Publication number
- KR920015486A KR920015486A KR1019910020402A KR910020402A KR920015486A KR 920015486 A KR920015486 A KR 920015486A KR 1019910020402 A KR1019910020402 A KR 1019910020402A KR 910020402 A KR910020402 A KR 910020402A KR 920015486 A KR920015486 A KR 920015486A
- Authority
- KR
- South Korea
- Prior art keywords
- processing chamber
- semiconductor wafer
- heat
- manufacturing apparatus
- semiconductor manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000000034 method Methods 0.000 title description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 7
- 238000009413 insulation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 제조장치를 표시하는 단면도, 제2도는 이 발명의 한 실시예에 의한 반도체 제조장치의 제어방법에 있어서 열처리전의 상태를 표시하는 개략도, 제3도는 이 발명의 한 실시예에 의한 반도체 제조장치의 제어방법에 있어서 열처리중의 상태를 표시하는 개략도, 제4도는 이 발명의 한 실시예에 의한 반도체제조장치의 제어방법에 있어서 열처리후의 상태를 표시하는 개략도, 제5도는 이 발명의 한 실시예에 의한 반도체 제조장치의 제어방법에 있어서 반도체 웨이퍼 냉각후의 상태를 표시하는 개략도.
Claims (2)
- 반도체 웨이퍼를 열처리하는 처리실과, 이 처리실의 외부에 배치된 가열용의 히터와, 상기 처리실내에 복수매의 반도체 웨이퍼를 지지해서 빼고 넣고 하는 장치와, 상기 처리실내에 상기 장치와는 독립으로 빼고 넣고 할 수가 있고, 또한 상기 반도체 웨이퍼를 싸서 배치되는 경(徑)을 가지는 보열관과를 구비한 것을 특징으로 하는 반도체 제조장치.
- 보열관을 처리실내에 넣고 처리실내를 가열하고 반도체웨이퍼를 탑재한 보드를 상기 처리실내의 보열관내로 넣고, 반도체웨이퍼를 열처리한후, 상기 처리실로부터 상기 보열관 및 상기 반도체 웨이퍼를 탑재한 보드를 동시에 꺼내서 상기 반도체웨이퍼가 소정온도이하로 되었을때, 반도체 웨이퍼의 주위로부터 보열관을 제거하는 것을 특징으로 하는 반도체 제조장치의 제어방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3015679A JPH04243126A (ja) | 1991-01-17 | 1991-01-17 | 半導体製造装置及びその制御方法 |
JP91-015679 | 1991-01-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920015486A true KR920015486A (ko) | 1992-08-27 |
KR960006690B1 KR960006690B1 (ko) | 1996-05-22 |
Family
ID=11895439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910020402A KR960006690B1 (ko) | 1991-01-17 | 1991-11-16 | 반도체 제조장치 및 그 제어방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5245158A (ko) |
EP (1) | EP0495294B1 (ko) |
JP (1) | JPH04243126A (ko) |
KR (1) | KR960006690B1 (ko) |
DE (1) | DE69110029T2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4306398A1 (de) * | 1993-03-02 | 1994-09-08 | Leybold Ag | Vorrichtung zum Erwärmen eines Substrates |
JP3180603B2 (ja) * | 1995-02-07 | 2001-06-25 | 信越化学工業株式会社 | 金属窒化物製造用流動層反応装置 |
TW291589B (ko) * | 1995-03-30 | 1996-11-21 | Ftl Co Ltd | |
US5662470A (en) * | 1995-03-31 | 1997-09-02 | Asm International N.V. | Vertical furnace |
US5820366A (en) * | 1996-07-10 | 1998-10-13 | Eaton Corporation | Dual vertical thermal processing furnace |
US6310328B1 (en) * | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3385921A (en) * | 1967-06-21 | 1968-05-28 | Electroglas Inc | Diffusion furnace with high speed recovery |
US4526534A (en) * | 1983-06-01 | 1985-07-02 | Quartz Engineering & Materials, Inc. | Cantilever diffusion tube apparatus and method |
US4573431A (en) * | 1983-11-16 | 1986-03-04 | Btu Engineering Corporation | Modular V-CVD diffusion furnace |
US4610628A (en) * | 1983-12-28 | 1986-09-09 | Denkoh Co., Ltd. | Vertical furnace for heat-treating semiconductor |
JPS6120318A (ja) * | 1984-07-06 | 1986-01-29 | Toshiba Corp | 縦型拡散炉 |
US4543059A (en) * | 1984-07-18 | 1985-09-24 | Quartz Engineering & Materials, Inc. | Slotted cantilever diffusion tube system and method and apparatus for loading |
JPS61260624A (ja) * | 1985-05-14 | 1986-11-18 | Matsushita Electric Ind Co Ltd | 赤外線ランプ熱処理装置 |
US4957781A (en) * | 1985-07-22 | 1990-09-18 | Hitachi, Ltd. | Processing apparatus |
JPS6221229A (ja) * | 1985-07-22 | 1987-01-29 | Hitachi Ltd | 処理装置 |
JPS6245020A (ja) * | 1985-08-23 | 1987-02-27 | Toshiba Corp | 半導体加熱用石英管のシ−ル方法 |
JPS62269313A (ja) * | 1986-05-16 | 1987-11-21 | Mitsubishi Electric Corp | 半導体製造装置 |
JP2690902B2 (ja) * | 1986-07-23 | 1997-12-17 | 株式会社日立製作所 | ウエハ面内熱応力転位発生抑制方法 |
JPS6366927A (ja) * | 1986-09-08 | 1988-03-25 | Toshiba Corp | 熱処理装置 |
JPS63133520A (ja) * | 1986-11-25 | 1988-06-06 | Nec Corp | 半導体装置製造用拡散炉 |
KR970008320B1 (ko) * | 1987-11-17 | 1997-05-23 | 도오교오 에레구토론 가부시끼가이샤 | 열처리 장치 |
KR0139816B1 (ko) * | 1988-02-26 | 1998-07-15 | 노보루 후세 | 열처리 장치 및 열처리 방법 |
JP2773150B2 (ja) * | 1988-09-08 | 1998-07-09 | 日本電気株式会社 | 半導体装置の製造装置 |
JP2748325B2 (ja) * | 1989-03-20 | 1998-05-06 | 富士通株式会社 | 半導体ウェハの加熱処理方法 |
JPH03194933A (ja) * | 1989-12-22 | 1991-08-26 | Tokyo Electron Sagami Ltd | 処理装置 |
US5000682A (en) * | 1990-01-22 | 1991-03-19 | Semitherm | Vertical thermal processor for semiconductor wafers |
-
1991
- 1991-01-17 JP JP3015679A patent/JPH04243126A/ja active Pending
- 1991-09-30 US US07/767,684 patent/US5245158A/en not_active Expired - Fee Related
- 1991-10-30 DE DE69110029T patent/DE69110029T2/de not_active Expired - Fee Related
- 1991-10-30 EP EP91310019A patent/EP0495294B1/en not_active Expired - Lifetime
- 1991-11-16 KR KR1019910020402A patent/KR960006690B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5245158A (en) | 1993-09-14 |
EP0495294B1 (en) | 1995-05-24 |
DE69110029T2 (de) | 1996-02-01 |
DE69110029D1 (de) | 1995-06-29 |
EP0495294A1 (en) | 1992-07-22 |
KR960006690B1 (ko) | 1996-05-22 |
JPH04243126A (ja) | 1992-08-31 |
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