KR920015486A - 반도체 제조장치 및 그 제어방법 - Google Patents

반도체 제조장치 및 그 제어방법 Download PDF

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Publication number
KR920015486A
KR920015486A KR1019910020402A KR910020402A KR920015486A KR 920015486 A KR920015486 A KR 920015486A KR 1019910020402 A KR1019910020402 A KR 1019910020402A KR 910020402 A KR910020402 A KR 910020402A KR 920015486 A KR920015486 A KR 920015486A
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South Korea
Prior art keywords
processing chamber
semiconductor wafer
heat
manufacturing apparatus
semiconductor manufacturing
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KR1019910020402A
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English (en)
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KR960006690B1 (ko
Inventor
야스시 하시쓰메
고하꾸 도미가와
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
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Publication of KR920015486A publication Critical patent/KR920015486A/ko
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Publication of KR960006690B1 publication Critical patent/KR960006690B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

내용 없음

Description

반도체 제조장치 및 그 제어방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 반도체 제조장치를 표시하는 단면도, 제2도는 이 발명의 한 실시예에 의한 반도체 제조장치의 제어방법에 있어서 열처리전의 상태를 표시하는 개략도, 제3도는 이 발명의 한 실시예에 의한 반도체 제조장치의 제어방법에 있어서 열처리중의 상태를 표시하는 개략도, 제4도는 이 발명의 한 실시예에 의한 반도체제조장치의 제어방법에 있어서 열처리후의 상태를 표시하는 개략도, 제5도는 이 발명의 한 실시예에 의한 반도체 제조장치의 제어방법에 있어서 반도체 웨이퍼 냉각후의 상태를 표시하는 개략도.

Claims (2)

  1. 반도체 웨이퍼를 열처리하는 처리실과, 이 처리실의 외부에 배치된 가열용의 히터와, 상기 처리실내에 복수매의 반도체 웨이퍼를 지지해서 빼고 넣고 하는 장치와, 상기 처리실내에 상기 장치와는 독립으로 빼고 넣고 할 수가 있고, 또한 상기 반도체 웨이퍼를 싸서 배치되는 경(徑)을 가지는 보열관과를 구비한 것을 특징으로 하는 반도체 제조장치.
  2. 보열관을 처리실내에 넣고 처리실내를 가열하고 반도체웨이퍼를 탑재한 보드를 상기 처리실내의 보열관내로 넣고, 반도체웨이퍼를 열처리한후, 상기 처리실로부터 상기 보열관 및 상기 반도체 웨이퍼를 탑재한 보드를 동시에 꺼내서 상기 반도체웨이퍼가 소정온도이하로 되었을때, 반도체 웨이퍼의 주위로부터 보열관을 제거하는 것을 특징으로 하는 반도체 제조장치의 제어방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910020402A 1991-01-17 1991-11-16 반도체 제조장치 및 그 제어방법 KR960006690B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3015679A JPH04243126A (ja) 1991-01-17 1991-01-17 半導体製造装置及びその制御方法
JP91-015679 1991-01-17

Publications (2)

Publication Number Publication Date
KR920015486A true KR920015486A (ko) 1992-08-27
KR960006690B1 KR960006690B1 (ko) 1996-05-22

Family

ID=11895439

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020402A KR960006690B1 (ko) 1991-01-17 1991-11-16 반도체 제조장치 및 그 제어방법

Country Status (5)

Country Link
US (1) US5245158A (ko)
EP (1) EP0495294B1 (ko)
JP (1) JPH04243126A (ko)
KR (1) KR960006690B1 (ko)
DE (1) DE69110029T2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4306398A1 (de) * 1993-03-02 1994-09-08 Leybold Ag Vorrichtung zum Erwärmen eines Substrates
JP3180603B2 (ja) * 1995-02-07 2001-06-25 信越化学工業株式会社 金属窒化物製造用流動層反応装置
TW291589B (ko) * 1995-03-30 1996-11-21 Ftl Co Ltd
US5662470A (en) * 1995-03-31 1997-09-02 Asm International N.V. Vertical furnace
US5820366A (en) * 1996-07-10 1998-10-13 Eaton Corporation Dual vertical thermal processing furnace
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385921A (en) * 1967-06-21 1968-05-28 Electroglas Inc Diffusion furnace with high speed recovery
US4526534A (en) * 1983-06-01 1985-07-02 Quartz Engineering & Materials, Inc. Cantilever diffusion tube apparatus and method
US4573431A (en) * 1983-11-16 1986-03-04 Btu Engineering Corporation Modular V-CVD diffusion furnace
US4610628A (en) * 1983-12-28 1986-09-09 Denkoh Co., Ltd. Vertical furnace for heat-treating semiconductor
JPS6120318A (ja) * 1984-07-06 1986-01-29 Toshiba Corp 縦型拡散炉
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JPS61260624A (ja) * 1985-05-14 1986-11-18 Matsushita Electric Ind Co Ltd 赤外線ランプ熱処理装置
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JPS6221229A (ja) * 1985-07-22 1987-01-29 Hitachi Ltd 処理装置
JPS6245020A (ja) * 1985-08-23 1987-02-27 Toshiba Corp 半導体加熱用石英管のシ−ル方法
JPS62269313A (ja) * 1986-05-16 1987-11-21 Mitsubishi Electric Corp 半導体製造装置
JP2690902B2 (ja) * 1986-07-23 1997-12-17 株式会社日立製作所 ウエハ面内熱応力転位発生抑制方法
JPS6366927A (ja) * 1986-09-08 1988-03-25 Toshiba Corp 熱処理装置
JPS63133520A (ja) * 1986-11-25 1988-06-06 Nec Corp 半導体装置製造用拡散炉
KR970008320B1 (ko) * 1987-11-17 1997-05-23 도오교오 에레구토론 가부시끼가이샤 열처리 장치
KR0139816B1 (ko) * 1988-02-26 1998-07-15 노보루 후세 열처리 장치 및 열처리 방법
JP2773150B2 (ja) * 1988-09-08 1998-07-09 日本電気株式会社 半導体装置の製造装置
JP2748325B2 (ja) * 1989-03-20 1998-05-06 富士通株式会社 半導体ウェハの加熱処理方法
JPH03194933A (ja) * 1989-12-22 1991-08-26 Tokyo Electron Sagami Ltd 処理装置
US5000682A (en) * 1990-01-22 1991-03-19 Semitherm Vertical thermal processor for semiconductor wafers

Also Published As

Publication number Publication date
US5245158A (en) 1993-09-14
EP0495294B1 (en) 1995-05-24
DE69110029T2 (de) 1996-02-01
DE69110029D1 (de) 1995-06-29
EP0495294A1 (en) 1992-07-22
KR960006690B1 (ko) 1996-05-22
JPH04243126A (ja) 1992-08-31

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