DE69110029T2 - Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers. - Google Patents

Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers.

Info

Publication number
DE69110029T2
DE69110029T2 DE69110029T DE69110029T DE69110029T2 DE 69110029 T2 DE69110029 T2 DE 69110029T2 DE 69110029 T DE69110029 T DE 69110029T DE 69110029 T DE69110029 T DE 69110029T DE 69110029 T2 DE69110029 T2 DE 69110029T2
Authority
DE
Germany
Prior art keywords
semiconductors
wafers
controlling
production
thermal treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69110029T
Other languages
English (en)
Other versions
DE69110029D1 (de
Inventor
Yasushi Hashizume
Mitsuhiro Tomikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69110029D1 publication Critical patent/DE69110029D1/de
Application granted granted Critical
Publication of DE69110029T2 publication Critical patent/DE69110029T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
DE69110029T 1991-01-17 1991-10-30 Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers. Expired - Fee Related DE69110029T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3015679A JPH04243126A (ja) 1991-01-17 1991-01-17 半導体製造装置及びその制御方法

Publications (2)

Publication Number Publication Date
DE69110029D1 DE69110029D1 (de) 1995-06-29
DE69110029T2 true DE69110029T2 (de) 1996-02-01

Family

ID=11895439

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69110029T Expired - Fee Related DE69110029T2 (de) 1991-01-17 1991-10-30 Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers.

Country Status (5)

Country Link
US (1) US5245158A (de)
EP (1) EP0495294B1 (de)
JP (1) JPH04243126A (de)
KR (1) KR960006690B1 (de)
DE (1) DE69110029T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4306398A1 (de) * 1993-03-02 1994-09-08 Leybold Ag Vorrichtung zum Erwärmen eines Substrates
JP3180603B2 (ja) * 1995-02-07 2001-06-25 信越化学工業株式会社 金属窒化物製造用流動層反応装置
TW291589B (de) * 1995-03-30 1996-11-21 Ftl Co Ltd
US5662470A (en) * 1995-03-31 1997-09-02 Asm International N.V. Vertical furnace
US5820366A (en) * 1996-07-10 1998-10-13 Eaton Corporation Dual vertical thermal processing furnace
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385921A (en) * 1967-06-21 1968-05-28 Electroglas Inc Diffusion furnace with high speed recovery
US4526534A (en) * 1983-06-01 1985-07-02 Quartz Engineering & Materials, Inc. Cantilever diffusion tube apparatus and method
US4573431A (en) * 1983-11-16 1986-03-04 Btu Engineering Corporation Modular V-CVD diffusion furnace
US4610628A (en) * 1983-12-28 1986-09-09 Denkoh Co., Ltd. Vertical furnace for heat-treating semiconductor
JPS6120318A (ja) * 1984-07-06 1986-01-29 Toshiba Corp 縦型拡散炉
US4543059A (en) * 1984-07-18 1985-09-24 Quartz Engineering & Materials, Inc. Slotted cantilever diffusion tube system and method and apparatus for loading
JPS61260624A (ja) * 1985-05-14 1986-11-18 Matsushita Electric Ind Co Ltd 赤外線ランプ熱処理装置
US4957781A (en) * 1985-07-22 1990-09-18 Hitachi, Ltd. Processing apparatus
JPS6221229A (ja) * 1985-07-22 1987-01-29 Hitachi Ltd 処理装置
JPS6245020A (ja) * 1985-08-23 1987-02-27 Toshiba Corp 半導体加熱用石英管のシ−ル方法
JPS62269313A (ja) * 1986-05-16 1987-11-21 Mitsubishi Electric Corp 半導体製造装置
JP2690902B2 (ja) * 1986-07-23 1997-12-17 株式会社日立製作所 ウエハ面内熱応力転位発生抑制方法
JPS6366927A (ja) * 1986-09-08 1988-03-25 Toshiba Corp 熱処理装置
JPS63133520A (ja) * 1986-11-25 1988-06-06 Nec Corp 半導体装置製造用拡散炉
KR970008320B1 (ko) * 1987-11-17 1997-05-23 도오교오 에레구토론 가부시끼가이샤 열처리 장치
KR0139816B1 (ko) * 1988-02-26 1998-07-15 노보루 후세 열처리 장치 및 열처리 방법
JP2773150B2 (ja) * 1988-09-08 1998-07-09 日本電気株式会社 半導体装置の製造装置
JP2748325B2 (ja) * 1989-03-20 1998-05-06 富士通株式会社 半導体ウェハの加熱処理方法
JPH03194933A (ja) * 1989-12-22 1991-08-26 Tokyo Electron Sagami Ltd 処理装置
US5000682A (en) * 1990-01-22 1991-03-19 Semitherm Vertical thermal processor for semiconductor wafers

Also Published As

Publication number Publication date
DE69110029D1 (de) 1995-06-29
KR960006690B1 (ko) 1996-05-22
US5245158A (en) 1993-09-14
EP0495294A1 (de) 1992-07-22
KR920015486A (ko) 1992-08-27
JPH04243126A (ja) 1992-08-31
EP0495294B1 (de) 1995-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee