DE69024077T2 - Einrichtung und Verfahren zur Behandlung von Halbleiterscheiben - Google Patents

Einrichtung und Verfahren zur Behandlung von Halbleiterscheiben

Info

Publication number
DE69024077T2
DE69024077T2 DE69024077T DE69024077T DE69024077T2 DE 69024077 T2 DE69024077 T2 DE 69024077T2 DE 69024077 T DE69024077 T DE 69024077T DE 69024077 T DE69024077 T DE 69024077T DE 69024077 T2 DE69024077 T2 DE 69024077T2
Authority
DE
Germany
Prior art keywords
semiconductor wafers
treating semiconductor
treating
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69024077T
Other languages
English (en)
Other versions
DE69024077D1 (de
Inventor
Charles Boitnott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GaSonics Inc
Original Assignee
GaSonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GaSonics Inc filed Critical GaSonics Inc
Publication of DE69024077D1 publication Critical patent/DE69024077D1/de
Application granted granted Critical
Publication of DE69024077T2 publication Critical patent/DE69024077T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
DE69024077T 1989-02-15 1990-01-29 Einrichtung und Verfahren zur Behandlung von Halbleiterscheiben Expired - Fee Related DE69024077T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/311,686 US5167717A (en) 1989-02-15 1989-02-15 Apparatus and method for processing a semiconductor wafer

Publications (2)

Publication Number Publication Date
DE69024077D1 DE69024077D1 (de) 1996-01-25
DE69024077T2 true DE69024077T2 (de) 1996-05-09

Family

ID=23208000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69024077T Expired - Fee Related DE69024077T2 (de) 1989-02-15 1990-01-29 Einrichtung und Verfahren zur Behandlung von Halbleiterscheiben

Country Status (4)

Country Link
US (2) US5167717A (de)
EP (1) EP0386447B1 (de)
JP (1) JPH0727895B2 (de)
DE (1) DE69024077T2 (de)

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* Cited by examiner, † Cited by third party
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US5167717A (en) * 1989-02-15 1992-12-01 Charles Boitnott Apparatus and method for processing a semiconductor wafer
US5167716A (en) * 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP3207943B2 (ja) * 1992-11-17 2001-09-10 忠弘 大見 低温酸化膜形成装置および低温酸化膜形成方法
JPH06188413A (ja) * 1992-12-17 1994-07-08 Shin Etsu Handotai Co Ltd Ｍｏｓ型半導体装置の製造方法
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
US5525159A (en) * 1993-12-17 1996-06-11 Tokyo Electron Limited Plasma process apparatus
US5879808A (en) * 1995-10-27 1999-03-09 Alpha Metals, Inc. Parylene polymer layers
US5536319A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including an atmospheric shroud and inert gas source
US5846888A (en) * 1996-09-27 1998-12-08 Micron Technology, Inc. Method for in-situ incorporation of desirable impurities into high pressure oxides
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
US6146469A (en) * 1998-02-25 2000-11-14 Gamma Precision Technology Apparatus and method for cleaning semiconductor wafers
US6372520B1 (en) 1998-07-10 2002-04-16 Lsi Logic Corporation Sonic assisted strengthening of gate oxides
US6303908B1 (en) * 1999-08-26 2001-10-16 Nichiyo Engineering Corporation Heat treatment apparatus
US6705432B2 (en) * 2001-11-09 2004-03-16 Lincoln Industrial Corporation Lubricant injection
JP3609077B1 (ja) * 2003-07-09 2005-01-12 東京エレクトロン株式会社 高圧熱処理装置
US7110665B2 (en) * 2003-10-01 2006-09-19 Canon Kabushiki Kaisha Thermal treatment equipment, thermal treatment method and manufacturing method of image display apparatus
US20070187386A1 (en) * 2006-02-10 2007-08-16 Poongsan Microtec Corporation Methods and apparatuses for high pressure gas annealing
JP5636575B2 (ja) * 2013-08-28 2014-12-10 株式会社ユーテック 水蒸気加圧急速加熱装置及び酸化物材料膜の製造方法
US10224224B2 (en) * 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN111095524B (zh) 2017-09-12 2023-10-03 应用材料公司 用于使用保护阻挡物层制造半导体结构的设备和方法
KR102585074B1 (ko) 2017-11-11 2023-10-04 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
WO2019099255A2 (en) 2017-11-17 2019-05-23 Applied Materials, Inc. Condenser system for high pressure processing system
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
CN112996950B (zh) 2018-11-16 2024-04-05 应用材料公司 使用增强扩散工艺的膜沉积
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film

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Publication number Priority date Publication date Assignee Title
US3666546A (en) * 1970-05-01 1972-05-30 Cogar Corp Ion-free insulating layers
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
US4154192A (en) * 1976-12-10 1979-05-15 Mitsubishi Denki Kabushiki Kaisha Manufacturing apparatus for semiconductor devices
US4268538A (en) * 1977-03-09 1981-05-19 Atomel Corporation High-pressure, high-temperature gaseous chemical method for silicon oxidation
US4167915A (en) * 1977-03-09 1979-09-18 Atomel Corporation High-pressure, high-temperature gaseous chemical apparatus
US4275094A (en) * 1977-10-31 1981-06-23 Fujitsu Limited Process for high pressure oxidation of silicon
US4253417A (en) * 1980-02-21 1981-03-03 Thermco Products Corporation Closure for thermal reactor
US4315479A (en) * 1980-06-27 1982-02-16 Atomel Corporation Silicon wafer steam oxidizing apparatus
US4351805A (en) * 1981-04-06 1982-09-28 International Business Machines Corporation Single gas flow elevated pressure reactor
US4634331A (en) * 1982-05-24 1987-01-06 Varian Associates, Inc. Wafer transfer system
JPS5982731A (ja) * 1982-11-04 1984-05-12 Toshiba Corp ウエハ水蒸気酸化装置
FR2571892B1 (fr) * 1984-10-17 1987-09-04 Buevoz Jean Louis Four d'oxydation de plaquettes en materiau semi-conducteur
US4599247A (en) * 1985-01-04 1986-07-08 Texas Instruments Incorporated Semiconductor processing facility for providing enhanced oxidation rate
US4606935A (en) * 1985-10-10 1986-08-19 International Business Machines Corporation Process and apparatus for producing high purity oxidation on a semiconductor substrate
US5167717A (en) * 1989-02-15 1992-12-01 Charles Boitnott Apparatus and method for processing a semiconductor wafer
US4920918A (en) * 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing

Also Published As

Publication number Publication date
DE69024077D1 (de) 1996-01-25
JPH02271529A (ja) 1990-11-06
JPH0727895B2 (ja) 1995-03-29
EP0386447A3 (en) 1990-12-05
US5167717A (en) 1992-12-01
US5314846A (en) 1994-05-24
EP0386447A2 (de) 1990-09-12
EP0386447B1 (de) 1995-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee