KR900019039A - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR900019039A
KR900019039A KR1019900007079A KR900007079A KR900019039A KR 900019039 A KR900019039 A KR 900019039A KR 1019900007079 A KR1019900007079 A KR 1019900007079A KR 900007079 A KR900007079 A KR 900007079A KR 900019039 A KR900019039 A KR 900019039A
Authority
KR
South Korea
Prior art keywords
burn
word line
memory device
semiconductor memory
circuit
Prior art date
Application number
KR1019900007079A
Other languages
English (en)
Other versions
KR930004177B1 (ko
Inventor
미츠루 시미즈
슈소 후지이
쇼조 사이토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR900019039A publication Critical patent/KR900019039A/ko
Application granted granted Critical
Publication of KR930004177B1 publication Critical patent/KR930004177B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

반도체기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 DRAM의 일부를 나타낸 구성설명도.

Claims (1)

  1. 일단에 행디코더출력신호(A)가 입력되고, 게이트에 소정전위(Vcc)가 공급되는 제1MOS트랜지스터(TN1)와, 이제1MOS 트랜지스터(TN1)의 다른단에 게이트가 접속되고 일단에 워드선구동제어신호(WORV)가 공급되며 다른단으로부터 출력되는 워드선구동신호(C)를 워드선(WL)에 공급하는 제2MOS트랜지스터(TN2)로 이루어진 워드선구동회로(16)를 구비하고, 또한 제1 및 제2MOS트랜지스터(TN1, TN2)가 형성되어 있는 반도체기판(10)에 바이어스전압을 공급하는 기판바이어스발생회로(11)를 구비한 반도체기억장치에 있어서, 외부에서 공급되는 번인시험모드신호입력을 검지하는 번인모드검지회로(14)와, 이 번인모드검지회로(14)의 번인 시험모드검지 출력에 따라 상기 바이어스전압을 낮추도록 기판바이어스발생회로(11)를 제어하는 기판바이어스제어회로(15)를 구비하여 구성된 것을 특징으로 하는 반도체기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900007079A 1989-05-20 1990-05-17 반도체 기억장치 KR930004177B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1127524A JPH07105160B2 (ja) 1989-05-20 1989-05-20 半導体記憶装置
JP89-127524 1989-05-20
JP1-127524 1989-05-20

Publications (2)

Publication Number Publication Date
KR900019039A true KR900019039A (ko) 1990-12-22
KR930004177B1 KR930004177B1 (ko) 1993-05-21

Family

ID=14962149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007079A KR930004177B1 (ko) 1989-05-20 1990-05-17 반도체 기억장치

Country Status (5)

Country Link
US (1) US5119337A (ko)
EP (1) EP0399240B1 (ko)
JP (1) JPH07105160B2 (ko)
KR (1) KR930004177B1 (ko)
DE (1) DE69011738T2 (ko)

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KR100248846B1 (ko) * 1990-04-27 2000-03-15 윌리엄 비. 켐플러 온-칩전원조절장치를갖는집적회로

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JP3158420B2 (ja) * 1990-08-30 2001-04-23 日本電気株式会社 温度検出回路および温度検出回路を備えた半導体装置
JP3050326B2 (ja) * 1990-11-30 2000-06-12 日本電気株式会社 半導体集積回路
JP3084759B2 (ja) * 1991-01-29 2000-09-04 日本電気株式会社 ダイナミックランダムアクセスメモリ装置
US5315598A (en) * 1991-04-04 1994-05-24 Texas Instruments Incorporated Method to reduce burn-in time and inducing infant failure
KR940004408B1 (ko) * 1991-08-23 1994-05-25 삼성전자 주식회사 반도체 메모리 장치의 자동 스트레스 모드 테스트장치
US5422852A (en) * 1992-02-27 1995-06-06 Texas Instruments Incorporated Method and system for screening logic circuits
US5212442A (en) * 1992-03-20 1993-05-18 Micron Technology, Inc. Forced substrate test mode for packaged integrated circuits
US5353254A (en) * 1992-05-21 1994-10-04 Texas Instruments Incorporated Semiconductor memory device having burn-in test circuit
JP3147991B2 (ja) * 1992-05-25 2001-03-19 株式会社東芝 半導体記憶装置
JP2848117B2 (ja) * 1992-05-27 1999-01-20 日本電気株式会社 半導体記憶回路
JPH0620471A (ja) * 1992-06-30 1994-01-28 Hitachi Ltd ダイナミック型ｒａｍ
JPH0628853A (ja) * 1992-07-08 1994-02-04 Mitsubishi Electric Corp 半導体記憶装置の基板電圧発生回路
KR950003014B1 (ko) * 1992-07-31 1995-03-29 삼성전자 주식회사 반도체 메모리 장치의 번-인 테스트회로 및 번-인 테스트방법
JP2977385B2 (ja) * 1992-08-31 1999-11-15 株式会社東芝 ダイナミックメモリ装置
KR960005387Y1 (ko) * 1992-09-24 1996-06-28 문정환 반도체 메모리의 번 인 테스트(Burn-In Test) 장치
JP3016998B2 (ja) * 1993-09-24 2000-03-06 日本電気株式会社 半導体記憶装置
KR0122100B1 (ko) * 1994-03-10 1997-11-26 김광호 스트레스회로를 가지는 반도체집적회로 및 그 스트레스전압공급방법
JP2822881B2 (ja) * 1994-03-30 1998-11-11 日本電気株式会社 半導体集積回路装置
US5497348A (en) * 1994-05-31 1996-03-05 Texas Instruments Incorporated Burn-in detection circuit
US5619459A (en) * 1995-05-31 1997-04-08 Micron Technology, Inc. On-chip mobile ion contamination test circuit
JP3629308B2 (ja) * 1995-08-29 2005-03-16 株式会社ルネサステクノロジ 半導体装置およびその試験方法
US5905682A (en) * 1997-08-22 1999-05-18 Micron Technology, Inc. Method and apparatus for biasing the substrate of an integrated circuit to an externally adjustable voltage
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
US5949726A (en) * 1998-07-22 1999-09-07 Vanguard International Semiconductor Corporation Bias scheme to reduce burn-in test time for semiconductor memory while preventing junction breakdown
US6563367B1 (en) * 2000-08-16 2003-05-13 Altera Corporation Interconnection switch structures
US6661253B1 (en) 2000-08-16 2003-12-09 Altera Corporation Passgate structures for use in low-voltage applications
JP3866111B2 (ja) * 2002-01-18 2007-01-10 株式会社ルネサステクノロジ 半導体集積回路及びバーンイン方法
US6900650B1 (en) * 2004-03-01 2005-05-31 Transmeta Corporation System and method for controlling temperature during burn-in
JP5528670B2 (ja) * 2004-03-01 2014-06-25 インテレクチュアル ベンチャー ファンディング エルエルシー バーンイン試験に関するシステムおよび方法
US6897671B1 (en) * 2004-03-01 2005-05-24 Transmeta Corporation System and method for reducing heat dissipation during burn-in
US7248988B2 (en) * 2004-03-01 2007-07-24 Transmeta Corporation System and method for reducing temperature variation during burn in
US7292065B2 (en) * 2004-08-03 2007-11-06 Altera Corporation Enhanced passgate structures for reducing leakage current
US7800143B2 (en) * 2006-07-13 2010-09-21 Globalfoundries Inc. Dynamic random access memory with an amplified capacitor
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JP5135608B2 (ja) * 2007-12-27 2013-02-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248846B1 (ko) * 1990-04-27 2000-03-15 윌리엄 비. 켐플러 온-칩전원조절장치를갖는집적회로

Also Published As

Publication number Publication date
JPH02306493A (ja) 1990-12-19
EP0399240A2 (en) 1990-11-28
US5119337A (en) 1992-06-02
EP0399240B1 (en) 1994-08-24
EP0399240A3 (en) 1991-07-03
JPH07105160B2 (ja) 1995-11-13
DE69011738D1 (de) 1994-09-29
KR930004177B1 (ko) 1993-05-21
DE69011738T2 (de) 1995-02-02

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