KR20190006080A - 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 - Google Patents

기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 Download PDF

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Publication number
KR20190006080A
KR20190006080A KR1020197000596A KR20197000596A KR20190006080A KR 20190006080 A KR20190006080 A KR 20190006080A KR 1020197000596 A KR1020197000596 A KR 1020197000596A KR 20197000596 A KR20197000596 A KR 20197000596A KR 20190006080 A KR20190006080 A KR 20190006080A
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South Korea
Prior art keywords
substrate
liquid
plate member
peripheral wall
wall portion
Prior art date
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Ceased
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KR1020197000596A
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English (en)
Korean (ko)
Inventor
유이치 시바자키
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가부시키가이샤 니콘
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Publication of KR20190006080A publication Critical patent/KR20190006080A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H10P72/78—

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020197000596A 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트 Ceased KR20190006080A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004171116 2004-06-09
JPJP-P-2004-171116 2004-06-09
JPJP-P-2004-205008 2004-07-12
JP2004205008 2004-07-12
PCT/JP2005/010458 WO2005122219A1 (ja) 2004-06-09 2005-06-08 基板保持装置及びそれを備える露光装置、露光方法、デバイス製造方法、並びに撥液プレート

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167032818A Division KR20160137690A (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트

Publications (1)

Publication Number Publication Date
KR20190006080A true KR20190006080A (ko) 2019-01-16

Family

ID=35503355

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020197000596A Ceased KR20190006080A (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020067026606A Expired - Fee Related KR101227290B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법,디바이스 제조 방법, 그리고 발액 플레이트
KR1020167032818A Abandoned KR20160137690A (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020147032469A Expired - Fee Related KR101681101B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020127002569A Expired - Fee Related KR101323967B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020137000176A Expired - Fee Related KR101511876B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020127030679A Expired - Fee Related KR101421870B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020067026606A Expired - Fee Related KR101227290B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법,디바이스 제조 방법, 그리고 발액 플레이트
KR1020167032818A Abandoned KR20160137690A (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020147032469A Expired - Fee Related KR101681101B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020127002569A Expired - Fee Related KR101323967B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020137000176A Expired - Fee Related KR101511876B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트
KR1020127030679A Expired - Fee Related KR101421870B1 (ko) 2004-06-09 2005-06-08 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법, 디바이스 제조 방법, 그리고 발액 플레이트

Country Status (10)

Country Link
US (2) US8705008B2 (enExample)
EP (3) EP3318928A1 (enExample)
JP (8) JP5170228B2 (enExample)
KR (7) KR20190006080A (enExample)
CN (4) CN103558737A (enExample)
HK (1) HK1249935A1 (enExample)
IL (2) IL179937A (enExample)
SG (3) SG10201710046XA (enExample)
TW (2) TWI447780B (enExample)
WO (1) WO2005122219A1 (enExample)

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