KR101641508B1 - 반도체 장치 및 그 제작 방법 - Google Patents

반도체 장치 및 그 제작 방법 Download PDF

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Publication number
KR101641508B1
KR101641508B1 KR1020090114424A KR20090114424A KR101641508B1 KR 101641508 B1 KR101641508 B1 KR 101641508B1 KR 1020090114424 A KR1020090114424 A KR 1020090114424A KR 20090114424 A KR20090114424 A KR 20090114424A KR 101641508 B1 KR101641508 B1 KR 101641508B1
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South Korea
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oxide semiconductor
semiconductor region
thin film
layer
film
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KR1020090114424A
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English (en)
Korean (ko)
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KR20100061359A (ko
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켄고 아키모토
토시나리 사사키
히데아키 쿠와바라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
KR1020090114424A 2008-11-28 2009-11-25 반도체 장치 및 그 제작 방법 KR101641508B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008304508 2008-11-28
JPJP-P-2008-304508 2008-11-28

Related Child Applications (3)

Application Number Title Priority Date Filing Date
KR1020120149549A Division KR101466598B1 (ko) 2008-11-28 2012-12-20 반도체 장치의 제작 방법
KR1020120149542A Division KR101425420B1 (ko) 2008-11-28 2012-12-20 반도체 장치 및 표시 장치
KR1020140162227A Division KR101667941B1 (ko) 2008-11-28 2014-11-20 반도체 장치의 제작 방법

Publications (2)

Publication Number Publication Date
KR20100061359A KR20100061359A (ko) 2010-06-07
KR101641508B1 true KR101641508B1 (ko) 2016-07-21

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ID=42221946

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Application Number Title Priority Date Filing Date
KR1020090114424A KR101641508B1 (ko) 2008-11-28 2009-11-25 반도체 장치 및 그 제작 방법
KR1020120149549A KR101466598B1 (ko) 2008-11-28 2012-12-20 반도체 장치의 제작 방법
KR1020120149542A KR101425420B1 (ko) 2008-11-28 2012-12-20 반도체 장치 및 표시 장치
KR1020140162227A KR101667941B1 (ko) 2008-11-28 2014-11-20 반도체 장치의 제작 방법

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020120149549A KR101466598B1 (ko) 2008-11-28 2012-12-20 반도체 장치의 제작 방법
KR1020120149542A KR101425420B1 (ko) 2008-11-28 2012-12-20 반도체 장치 및 표시 장치
KR1020140162227A KR101667941B1 (ko) 2008-11-28 2014-11-20 반도체 장치의 제작 방법

Country Status (5)

Country Link
US (4) US8344387B2 (zh)
JP (8) JP2010153842A (zh)
KR (4) KR101641508B1 (zh)
CN (3) CN101752425B (zh)
TW (4) TWI508304B (zh)

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JP5480554B2 (ja) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
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TWI508304B (zh) 2008-11-28 2015-11-11 Semiconductor Energy Lab 半導體裝置和其製造方法
JP5491833B2 (ja) 2008-12-05 2014-05-14 株式会社半導体エネルギー研究所 半導体装置
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
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KR101648927B1 (ko) 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
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JP2012099661A (ja) * 2010-11-02 2012-05-24 Idemitsu Kosan Co Ltd 酸化物半導体の製造方法
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