KR101116202B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR101116202B1
KR101116202B1 KR1020050012565A KR20050012565A KR101116202B1 KR 101116202 B1 KR101116202 B1 KR 101116202B1 KR 1020050012565 A KR1020050012565 A KR 1020050012565A KR 20050012565 A KR20050012565 A KR 20050012565A KR 101116202 B1 KR101116202 B1 KR 101116202B1
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South Korea
Prior art keywords
delete delete
field effect
semiconductor chip
effect transistor
gate
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KR1020050012565A
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English (en)
Korean (ko)
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KR20060041974A (ko
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유키히로 사토우
토모아키 우노
노부요시 마츠우라
마사키 시라이시
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20060041974A publication Critical patent/KR20060041974A/ko
Priority to KR1020110105104A priority Critical patent/KR101116195B1/ko
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Publication of KR101116202B1 publication Critical patent/KR101116202B1/ko

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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H02M3/00—Conversion of dc power input into dc power output
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    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
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JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
JP2007012857A (ja) * 2005-06-30 2007-01-18 Renesas Technology Corp 半導体装置
JP2007116012A (ja) * 2005-10-24 2007-05-10 Renesas Technology Corp 半導体装置及びそれを用いた電源装置
DE102005051417A1 (de) * 2005-10-27 2007-05-03 X-Fab Semiconductor Foundries Ag Simulations- bzw. Layoutverfahren für vertikale Leistungstransistoren mit variierbarer Kanalweite und variierbarer Gate-Drain-Kapazität
EP1949436A2 (en) * 2005-11-08 2008-07-30 Nxp B.V. Leadframe-based ic-package with supply-reference comb
JP4687430B2 (ja) * 2005-12-06 2011-05-25 株式会社デンソー 電子装置およびその製造方法
JP4662474B2 (ja) * 2006-02-10 2011-03-30 ルネサスエレクトロニクス株式会社 データ処理デバイス
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