JP5813963B2 - 半導体装置、および、半導体装置の実装構造 - Google Patents
半導体装置、および、半導体装置の実装構造 Download PDFInfo
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- JP5813963B2 JP5813963B2 JP2011041453A JP2011041453A JP5813963B2 JP 5813963 B2 JP5813963 B2 JP 5813963B2 JP 2011041453 A JP2011041453 A JP 2011041453A JP 2011041453 A JP2011041453 A JP 2011041453A JP 5813963 B2 JP5813963 B2 JP 5813963B2
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 320
- 229920005989 resin Polymers 0.000 claims description 126
- 239000011347 resin Substances 0.000 claims description 126
- 229910000679 solder Inorganic materials 0.000 claims description 36
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 23
- 238000005452 bending Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000013067 intermediate product Substances 0.000 description 20
- 239000004020 conductor Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 230000005484 gravity Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Description
図1〜図17を用いて本発明の第1実施形態について説明する。
図18〜図34を用いて、本発明の第2実施形態について説明する。
図35〜図38を用いて、本発明の第3実施形態について説明する。
図39〜図42を用いて、本発明の第4実施形態について説明する。
図43,図44を用いて、本発明の第5実施形態について説明する。
881〜888 ハンダ層
101〜105 半導体装置
106 配線基板
21,22,22a,22b,23〜26,28,29 導電板
211,221,251 パッド部
212,222,252 中間部
216,226,248 穴
213,223,253 実装部
219,229,259 実装面
227,237,247,257 凹部
231,232,241,242 導電面
233 段差部
31,31a,31b,32,32a,32b,33,34 半導体チップ
311,312,321,322 主面電極
313,323 裏面電極
38 ダイオード
39 抵抗
411〜418,421,422 導電性接合部
46〜49,461 ワイヤ
462 導通部材
51,51a,51b,52,52a,52b,53,58,59 ワイヤボンディング用リード
511,521,531 パッド部
515,525,535 パッド主面
516,526,536 パッド裏面
512,522,532 中間部
513,523,533 実装部
519,529 実装面
7 樹脂部
71 樹脂底面
72 樹脂側面
721 第1部分
722 第2部分
73 樹脂主面
851 第1中間品
852,853 第2中間品
841〜845 リードフレーム
L1,L2 線
Claims (21)
- 複数の機能素子チップと、
上記複数の機能素子チップのうちの2つの機能素子チップのいずれにも接合された導通部材と、
第1ワイヤと、
上記複数の機能素子チップ、上記導通部材、および上記第1ワイヤを覆う樹脂部と、を備え、
上記2つの機能素子チップの一方は、互いに同一方向を向く第1ソース電極および第1ゲート電極と、上記第1ソース電極の向く方向とは反対の方向を向く第1ドレイン電極と、を含む第1半導体チップであり、上記導通部材は、上記第1ソース電極に接合され、上記第1ワイヤは、上記第1ゲート電極に接合され、且つ、上記第1半導体チップの厚さ方向において上記導通部材に重なる部位を有しており、
上記導通部材は、第1導電板であり、上記2つの機能素子チップの他方は、上記第1ソース電極の向く方向と同一方向を向く第2ソース電極および第2ゲート電極と上記第2ソース電極の向く方向とは反対の方向を向く第2ドレイン電極とを含む第2半導体チップであり、
上記第1半導体チップの上記第1ソース電極と上記第2半導体チップの上記第2ドレイン電極とは、上記第1導電板を介して電気的に接続されている、半導体装置。 - 上記樹脂部から露出しているワイヤボンディング用リードを更に備え、
上記ワイヤボンディング用リードは、上記第1ワイヤが接合されたパッド主面を有するパッド部を含む、請求項1に記載の半導体装置。 - 上記パッド主面は、上記厚さ方向において、上記第1ドレイン電極よりも上記第1ソース電極の配置された側に位置する、請求項2に記載の半導体装置。
- 上記樹脂部は、上記厚さ方向のいずれか一方を向く樹脂底面を有し、
上記ワイヤボンディング用リードは、上記樹脂底面から露出する実装部を含む、請求項2または3に記載の半導体装置。
- 上記実装部は、上記樹脂底面と面一である実装面を有する、請求項4に記載の半導体装置。
- 上記ワイヤボンディング用リードは、上記パッド部と上記実装部との間に位置する中間部を含み、上記中間部は、上記樹脂底面に対し傾斜している、請求項5に記載の半導体装置。
- 上記パッド主面は、上記樹脂底面の位置する側を向く、請求項4ないし6のいずれかに記載の半導体装置。
- 上記パッド部は、上記パッド主面とは反対側のパッド裏面を有し、上記パッド裏面は、上記樹脂底面の位置する側を向く、請求項4ないし6のいずれかに記載の半導体装置。
- 上記第2半導体チップは、上記厚さ方向視において、上記第1半導体チップからずれた位置に配置されている、請求項1ないし8のいずれかに記載の半導体装置。
- 上記第1導電板には、上記第1ワイヤの一部が配置された凹部が形成されている、請求項1ないし9のいずれかに記載の半導体装置。
- 第2導電板を更に備え、
上記第2ソース電極は、上記第2導電板に接合されている、請求項1ないし10のいずれかに記載の半導体装置。 - 上記第2導電板は、上記第2ソース電極が接合された第1導電面と、上記第1導電面の向く方向とは反対方向を向く第2導電面と、を有し、
上記第2導電面は、上記樹脂部から露出している、請求項11に記載の半導体装置。 - 上記第1導電面は、上記厚さ方向視において、上記第2導電面からはみ出る部位を有する、請求項12に記載の半導体装置。
- 第2ワイヤを更に備え、
上記第2ワイヤは、上記第2ゲート電極に接合され、且つ、上記厚さ方向において上記第2導電板に重なる、請求項11ないし13のいずれかに記載の半導体装置。 - 第2導電板を更に備え、
上記第2ソース電極は、上記第2導電板に接合されている、請求項1ないし10のいずれかに記載の半導体装置。 - 上記第1導電板は、上記第1ソース電極が接合された第1導電面と、上記第1ソース電極とは反対側の第2導電面と、を有し、上記第2導電面は、上記樹脂部から露出する、請求項15に記載の半導体装置。
- 上記第1導電面は、上記厚さ方向視において、上記第2導電面からはみ出る部位を有する、請求項16に記載の半導体装置。
- 第2ワイヤを更に備え、
上記第2ワイヤは、上記第2ゲート電極に接合され、且つ、上記厚さ方向において上記第2導電板に重なる、請求項15ないし17のいずれかに記載の半導体装置。 - 上記第1導電板には、上記樹脂部の一部が入り込む孔が形成されている、請求項1ないし18のいずれかに記載の半導体装置。
- 上記機能素子チップのいずれか一つは、ダイオード、抵抗、もしくはコンデンサである、請求項1に記載の半導体装置。
- 請求項1ないし20のいずれかに記載の半導体装置と、
上記半導体装置が配置された配線基板と、
上記半導体装置および上記配線基板の間に介在するハンダ層と、を備える、半導体装置の実装構造。
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US13/406,527 US8963304B2 (en) | 2011-02-28 | 2012-02-27 | Semiconductor device and semiconductor device mounting structure |
US14/613,473 US9711481B2 (en) | 2011-02-28 | 2015-02-04 | Semiconductor device and semiconductor device mounting structure |
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CN110164823B (zh) * | 2012-11-09 | 2023-08-22 | 富士电机株式会社 | 半导体装置 |
US9385070B2 (en) * | 2013-06-28 | 2016-07-05 | Delta Electronics, Inc. | Semiconductor component having a lateral semiconductor device and a vertical semiconductor device |
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US9589868B2 (en) * | 2015-03-11 | 2017-03-07 | Gan Systems Inc. | Packaging solutions for devices and systems comprising lateral GaN power transistors |
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US7176506B2 (en) * | 2001-08-28 | 2007-02-13 | Tessera, Inc. | High frequency chip packages with connecting elements |
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US7442295B2 (en) * | 2006-07-14 | 2008-10-28 | Jian-Rung Cheng | Water purification and treatment apparatus and treatment process using the apparatus |
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