JP5822468B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5822468B2 JP5822468B2 JP2011002707A JP2011002707A JP5822468B2 JP 5822468 B2 JP5822468 B2 JP 5822468B2 JP 2011002707 A JP2011002707 A JP 2011002707A JP 2011002707 A JP2011002707 A JP 2011002707A JP 5822468 B2 JP5822468 B2 JP 5822468B2
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- lead
- mounting lead
- semiconductor device
- semiconductor chip
- mounting
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- 239000004065 semiconductor Substances 0.000 title claims description 385
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- 239000011347 resin Substances 0.000 claims description 135
- 239000004020 conductor Substances 0.000 claims description 100
- 238000004891 communication Methods 0.000 claims description 22
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- 229910000679 solder Inorganic materials 0.000 description 50
- 238000012986 modification Methods 0.000 description 40
- 230000004048 modification Effects 0.000 description 40
- 239000000463 material Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 20
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- 238000004519 manufacturing process Methods 0.000 description 16
- 239000007787 solid Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
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- 230000017525 heat dissipation Effects 0.000 description 2
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- 239000013067 intermediate product Substances 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
図1は、本発明の第1実施形態にかかる実装構造を示す要部断面図である。
図20,図21を用いて、本実施形態の半導体装置の第1変形例について説明する。
図22を用いて、本実施形態の半導体装置の第2変形例について説明する。
図23を用いて、本実施形態の半導体装置の第3変形例について説明する。
図29を用いて、本実施形態の半導体装置の第5変形例について説明する。
次に、図45を用いて、本実施形態の半導体装置の第1変形例について説明する。
100〜105 半導体装置
106 配線基板
107〜109 ハンダ層
1 半導体チップ
11,12 主面電極
111,121 電極面
13 裏面電極
131 電極面
16〜19 チップ側面
2,20 (第1)実装リード
21 (第1)実装リード主面
210 実装リード主面
22 (第1)実装リード底面
220 実装リード底面
26 支持部
261 基部
262 第1延出部
263,264 第2延出部
27 帯状部
271 (実装リード)側面
28 凹部
3,30 (第2)実装リード
31 (第2)実装リード主面
310 実装リード主面
32 (第2)実装リード底面
320 実装リード底面
36 支持部
361 基部
362 第1延出部
363,364 第2延出部
37 帯状部
38 凹部
4,40 実装リード
41,410 実装リード主面
42 実装リード底面
46 支持部
461 基部
462 第1延出部
463 第2延出部
47 帯状部
51 連絡リード
511 連絡リード主面
512 連絡リード裏面
513,514 連絡リード側面
518,519 凹部
52 連絡リード
521 連絡リード主面
522 連絡リード裏面
571 チップ対向面
572,573 実装リード対向面
61 (第1)導電性接合部
62 (第2)導電性接合部
63 (第3)導電性接合部
64,65 導電性接合部
67 導電性接合材
7 導電体層
71 面
8 樹脂部
81 樹脂底面
82 樹脂側面
821 直立部
822 傾斜部
83 樹脂主面
881 テープ
882 金型
883 凹部
884 部材
885 固片
802 実装構造
200,201 半導体装置
206 配線基板
207〜209 ハンダ層
601 半導体チップ
611,612 主面電極
613 裏面電極
616,617 (第1)電極面
618 (第2)電極面
602,620 リード
621 リード主面
622 リード底面
623,624 リード側面
628 第1部位
629 第2部位
603 リード
631 リード主面
632 リード底面
633 リード側面
638 第1部位
639 第2部位
661,662 導電性接合部
667 導電性接合材
607 導電体層
671 面
608,680 樹脂部
681 樹脂底面
683 樹脂主面
691 テープ
692 金型
693 凹部
694 部材
695 固片
Claims (17)
- 主面電極を含む半導体チップと、
上記半導体チップの厚さ方向に直交する方向のうちのいずれか一方向に、上記半導体チップに対し離間する第1実装リードと、
上記厚さ方向に直交する方向のうちのいずれか一方向に、上記半導体チップに対し離間する第2実装リードと、
上記主面電極、上記第1実装リード、および上記第2実装リードのいずれとも上記厚さ方向視において重なり、且つ、上記主面電極、上記第1実装リード、および上記第2実装リードを互いに導通させる連絡リードと、
上記半導体チップ、上記第1実装リード、および上記第2実装リードを覆う樹脂部と、を備え、
上記第1実装リードは、上記厚さ方向のうち上記連絡リードから上記主面電極に向かう第1方向を向く第1実装リード底面を有し、
上記第2実装リードは、上記第1方向を向く第2実装リード底面を有し、
上記樹脂部は、上記第1実装リード底面および上記第2実装リード底面のいずれとも面一の樹脂底面を有するとともに、
上記主面電極および上記連絡リードの間に位置し且つ上記主面電極および上記連絡リードを接合する第1導電性接合部と、
上記第1実装リードおよび上記連絡リードの間に位置し且つ上記第1実装リードおよび上記連絡リードを接合する第2導電性接合部と、
上記第2実装リードおよび上記連絡リードの間に位置し且つ上記第2実装リードおよび上記連絡リードを接合する第3導電性接合部と、を更に備え、
上記連絡リードには、上記厚さ方向視において側面から凹む凹部が形成されており、
上記第2導電性接合部および上記第3導電性接合部の少なくともいずれかは、上記平面視において上記連絡リード内方に凹む形状で上記凹部に入り込んでいる、半導体装置。 - 上記半導体チップは、上記樹脂底面から露出する裏面電極を含む、請求項1に記載の半導体装置。
- 上記第1実装リードは、上記連絡リードに対向する第1実装リード主面を有し、
上記第1実装リード主面は、上記厚さ方向視において上記第1実装リード底面よりも上記半導体チップ側に位置する部位を有する、請求項1または2に記載の半導体装置。 - 上記厚さ方向における上記第1導電性接合部の寸法は、上記厚さ方向における上記第2導電性接合部の寸法、および、上記厚さ方向における上記第3導電性接合部の寸法のいずれよりも大きい、請求項1ないし3のいずれかに記載の半導体装置。
- 上記樹脂部は、上記厚さ方向視において上記半導体チップを囲む樹脂側面を有し、
上記第1実装リードは、上記樹脂側面から露出する、請求項1ないし4のいずれかに記載の半導体装置。 - 上記樹脂側面は、上記連絡リードを囲む、請求項5に記載の半導体装置。
- 上記樹脂側面は、上記樹脂底面と鋭角をなすように上記厚さ方向に対し傾斜する傾斜部を有する、請求項5に記載の半導体装置。
- 上記半導体チップは、上記第1実装リードおよび第2実装リードの間に位置する、請求項1ないし7のいずれかに記載の半導体装置。
- 上記連絡リードは、上記第1方向の反対方向を向き且つ上記樹脂部に覆われた連絡リード主面を有する、請求項1ないし8のいずれかに記載の半導体装置。
- 上記連絡リードは、上記第1方向の反対方向を向き且つ上記樹脂部から露出している連絡リード主面を有する、請求項1ないし8のいずれかに記載の半導体装置。
- 上記連絡リードは、断面がコの字状の部位を有する、請求項1ないし10のいずれかに記載の半導体装置。
- 上記第1実装リードは、上記樹脂側面から突出している、請求項5に記載の半導体装置。
- 上記第1実装リードは、上記樹脂側面と面一である実装リード側面を更に有する、請求項5に記載の半導体装置。
- 上記樹脂底面から露出している導電体層を更に備え、
上記半導体チップは、電極面を有する裏面電極を含み、
上記電極面は、上記第1方向を向き且つ上記導電体層に直接接する、請求項1に記載の半導体装置。 - 上記半導体チップは、上記厚さ方向視において、上記導電体層からはみ出ている、請求項14に記載の半導体装置。
- 上記厚さ方向視における上記導電体層の面積は、上記厚さ方向視における上記半導体チップの面積より小さい、請求項14または15に記載の半導体装置。
- 上記厚さ方向視における上記導電体層の面積は、上記厚さ方向視における上記半導体チップの面積より大きい、請求項14または15に記載の半導体装置。
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