JP6639320B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6639320B2 JP6639320B2 JP2016089226A JP2016089226A JP6639320B2 JP 6639320 B2 JP6639320 B2 JP 6639320B2 JP 2016089226 A JP2016089226 A JP 2016089226A JP 2016089226 A JP2016089226 A JP 2016089226A JP 6639320 B2 JP6639320 B2 JP 6639320B2
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- bus bar
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- 239000004065 semiconductor Substances 0.000 title claims description 55
- 239000011347 resin Substances 0.000 claims description 45
- 229920005989 resin Polymers 0.000 claims description 45
- 239000002826 coolant Substances 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 description 26
- 239000000498 cooling water Substances 0.000 description 18
- 238000001816 cooling Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000010292 electrical insulation Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 230000001172 regenerating effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60L—PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES; SUPPLYING ELECTRIC POWER FOR AUXILIARY EQUIPMENT OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRODYNAMIC BRAKE SYSTEMS FOR VEHICLES IN GENERAL; MAGNETIC SUSPENSION OR LEVITATION FOR VEHICLES; MONITORING OPERATING VARIABLES OF ELECTRICALLY-PROPELLED VEHICLES; ELECTRIC SAFETY DEVICES FOR ELECTRICALLY-PROPELLED VEHICLES
- B60L9/00—Electric propulsion with power supply external to the vehicle
- B60L9/16—Electric propulsion with power supply external to the vehicle using ac induction motors
- B60L9/18—Electric propulsion with power supply external to the vehicle using ac induction motors fed from dc supply lines
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Transportation (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inverter Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electric Propulsion And Braking For Vehicles (AREA)
Description
まず、図4から図7Cを参照して、本発明の第1の実施形態に係る半導体装置100について説明する。
以下、図8Aから図9Cを参照して、本発明の第2の実施形態に係る半導体装置200について説明する。以下に示す各実施形態では、第1の実施形態と異なる点を中心に説明し、同様の機能を有する構成には同一の符号を付して説明を省略する。
以下、図10Aから図11Cを参照して、本発明の第3の実施形態に係る半導体装置300について説明する。
1 電力変換装置
2 ケース
2c 底部(設置部)
4 冷却水流路
4a パワーモジュール冷却部(第1冷却媒体流路)
4b DC/DCコンバータ冷却部(第2冷却媒体流路)
6 モータジェネレータ(回転電機,負荷)
20 パワーモジュール
20b,220b,320b 樹脂モールド部
23a 正側バスバー(端子)
23b 負側バスバー(端子)
23u U相バスバー(端子)
23v V相バスバー(端子)
23w W相バスバー(端子)
27 絶縁シート
28u,28v,28w IGBT(パワー素子,半導体素子)
29u,29v,29w IGBT(パワー素子,半導体素子)
30 DC/DCコンバータ
90 冷却器
91 凹部
92,392 凹部
93,393 端子台
93a,393a 凸部
Claims (4)
- 半導体装置であって、
半導体素子と、
前記半導体素子を包囲する樹脂モールド部と、
前記半導体素子に接続されて前記樹脂モールド部から突出する端子と、
前記樹脂モールド部が載置され、前記半導体素子を冷却する冷却器と、を備え、
前記冷却器において前記樹脂モールド部が載置された面には、前記端子と対向する位置から前記樹脂モールド部の端部よりも内側にかけて凹部が形成されており、
前記冷却器の前記凹部には、前記端子との間に設けられて前記端子を支持する端子台が設けられることを特徴とする半導体装置。 - 請求項1に記載の半導体装置であって、
前記樹脂モールド部は、前記冷却器の前記凹部と対向する部分に凹部を有することを特徴とする半導体装置。 - 請求項2に記載の半導体装置であって、
前記端子台は、前記樹脂モールド部の前記凹部に挿入された凸部を有することを特徴とする半導体装置。 - 請求項1から3のいずれか一つに記載の半導体装置であって、
前記冷却器は、
冷却媒体が流通して前記半導体素子を冷却する第1冷却媒体流路と、
冷却媒体が流通して前記半導体素子とは別のデバイスを冷却する第2冷却媒体流路と、を有し、
前記冷却器の前記凹部は、前記第1冷却媒体流路と前記第2冷却媒体流路との間に位置することを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016089226A JP6639320B2 (ja) | 2016-04-27 | 2016-04-27 | 半導体装置 |
US16/097,143 US11348855B2 (en) | 2016-04-27 | 2017-04-27 | Semiconductor component and power module |
PCT/JP2017/016696 WO2017188368A1 (ja) | 2016-04-27 | 2017-04-27 | 半導体装置及びパワーモジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016089226A JP6639320B2 (ja) | 2016-04-27 | 2016-04-27 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017200315A JP2017200315A (ja) | 2017-11-02 |
JP2017200315A5 JP2017200315A5 (ja) | 2019-07-25 |
JP6639320B2 true JP6639320B2 (ja) | 2020-02-05 |
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ID=60159789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016089226A Active JP6639320B2 (ja) | 2016-04-27 | 2016-04-27 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11348855B2 (ja) |
JP (1) | JP6639320B2 (ja) |
WO (1) | WO2017188368A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7147859B2 (ja) | 2018-10-05 | 2022-10-05 | 富士電機株式会社 | 半導体装置、半導体モジュールおよび車両 |
JP6760691B1 (ja) * | 2019-05-10 | 2020-09-23 | 三菱電機株式会社 | 電力変換装置 |
WO2020245996A1 (ja) * | 2019-06-06 | 2020-12-10 | 三菱電機株式会社 | 半導体モジュールおよび電力変換装置 |
JP2022161696A (ja) * | 2021-04-09 | 2022-10-21 | 株式会社デンソー | パワーカード |
JP7484817B2 (ja) * | 2021-06-02 | 2024-05-16 | 株式会社デンソー | 電気機器 |
JP7166408B1 (ja) | 2021-09-06 | 2022-11-07 | 三菱電機株式会社 | 回転電機 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH077836B2 (ja) * | 1986-10-31 | 1995-01-30 | オムロン株式会社 | 固体継電器 |
JPH09129796A (ja) * | 1995-10-27 | 1997-05-16 | Rohm Co Ltd | 半導体装置 |
JP3406753B2 (ja) | 1995-11-30 | 2003-05-12 | 三菱電機株式会社 | 半導体装置および半導体モジュール |
JP2004200264A (ja) * | 2002-12-17 | 2004-07-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
KR101221805B1 (ko) * | 2006-03-03 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자용 패키지 및 패키지 어셈블리 |
JP4840165B2 (ja) * | 2007-01-29 | 2011-12-21 | 株式会社デンソー | 半導体装置 |
TW201011869A (en) * | 2008-09-10 | 2010-03-16 | Cyntec Co Ltd | Chip package structure |
US8513784B2 (en) * | 2010-03-18 | 2013-08-20 | Alpha & Omega Semiconductor Incorporated | Multi-layer lead frame package and method of fabrication |
JP5581822B2 (ja) * | 2010-06-07 | 2014-09-03 | 日産自動車株式会社 | 半導体装置 |
JP5257817B2 (ja) * | 2010-06-15 | 2013-08-07 | 三菱電機株式会社 | 半導体装置 |
US8670237B2 (en) | 2010-12-28 | 2014-03-11 | Mitsubishi Electric Corporation | Power conversion apparatus |
JP5813963B2 (ja) * | 2011-02-28 | 2015-11-17 | ローム株式会社 | 半導体装置、および、半導体装置の実装構造 |
JP5484429B2 (ja) * | 2011-11-18 | 2014-05-07 | 三菱電機株式会社 | 電力変換装置 |
DE102013219192A1 (de) * | 2013-09-24 | 2015-03-26 | Conti Temic Microelectronic Gmbh | Leistungsmodul, Stromrichter und Antriebsanordnung mit einem Leistungsmodul |
JP6125984B2 (ja) | 2013-12-11 | 2017-05-10 | トヨタ自動車株式会社 | 半導体装置 |
-
2016
- 2016-04-27 JP JP2016089226A patent/JP6639320B2/ja active Active
-
2017
- 2017-04-27 WO PCT/JP2017/016696 patent/WO2017188368A1/ja active Application Filing
- 2017-04-27 US US16/097,143 patent/US11348855B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017188368A1 (ja) | 2017-11-02 |
US20210225724A1 (en) | 2021-07-22 |
JP2017200315A (ja) | 2017-11-02 |
US11348855B2 (en) | 2022-05-31 |
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