JP4957183B2 - 裏面高耐圧集積回路を用いた半導体装置 - Google Patents
裏面高耐圧集積回路を用いた半導体装置 Download PDFInfo
- Publication number
- JP4957183B2 JP4957183B2 JP2006294207A JP2006294207A JP4957183B2 JP 4957183 B2 JP4957183 B2 JP 4957183B2 JP 2006294207 A JP2006294207 A JP 2006294207A JP 2006294207 A JP2006294207 A JP 2006294207A JP 4957183 B2 JP4957183 B2 JP 4957183B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- switching element
- terminal
- semiconductor device
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 86
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 19
- 238000010586 diagram Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P3/00—Other installations
- F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
- F02P3/04—Layout of circuits
- F02P3/0407—Opening or closing the primary coil circuit with electronic switching means
- F02P3/0435—Opening or closing the primary coil circuit with electronic switching means with semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Description
本実施の形態1に係る半導体装置について説明する。図1に示すように、半導体装置1は、導電体2を用いて形成されている。導電体2の上には電力半導体素子としての第1のスイッチング素子3が設けられ、導電体2と電気的に接続されている。導電体2の上で、第1のスイッチング素子3と離間して、裏面高耐圧集積回路4が設けられている。
本実施の形態2に係る半導体装置について説明する。ここでは、実施の形態1と異なる点を中心に説明する。
本実施の形態3に係る半導体装置について説明する。ここでは、実施の形態2と異なる点を中心に説明する。
本実施の形態4に係る半導体装置について説明する。ここでは、実施の形態3と異なる点を中心に説明する。
Claims (3)
- 入力側コイル及び出力側コイルを有し、前記入力側コイルに第1の電圧以上の電圧が印加されると前記出力側コイルに電流が流れる負荷コイルと、
導電体と、
前記導電体上で前記導電体と電気的に接続され、表面と裏面との間の耐圧が第1の耐圧であり、入力端子及び出力端子を有し、前記出力端子が前記負荷コイルの前記入力側コイルの一端に接続され、前記負荷コイルの前記入力側コイルに電圧を印加する第1のスイッチング素子と、
前記導電体上で前記第1のスイッチング素子と離間して設けられ、表面と裏面との耐圧が前記第1の耐圧よりも大きい第2の耐圧である裏面高耐圧集積回路と、
前記導電体上で前記第1のスイッチング素子及び前記裏面高耐圧集積回路と離間して設けられた絶縁基板と、
前記絶縁基板に接続された入出力用の配線と、
前記絶縁基板と前記第1のスイッチング素子とを接続する第1の配線と、
前記絶縁基板と前記裏面高耐圧集積回路とを接続する第2の配線とを有し、
前記裏面高耐圧集積回路は、
前記第1のスイッチング素子の前記入力端子に接続され、前記第1のスイッチング素子のオン・オフを制御する制御回路と、
前記負荷コイルの前記入力側コイルに接続されたコレクタと、接地されたエミッタと、前記負荷コイルの前記入力側コイルの電圧が出力されるベースとを有するサイリスタと、
一方の端子が前記サイリスタの前記ベースに接続され、他方の端子が接地されたツェナーダイオードとを含み、
前記第1のスイッチング素子がオンし、前記ツェナーダイオードの前記一方の端子に出力される電圧が前記第1の電圧よりも高い第2の電圧以上である場合、前記ツェナーダイオードの前記一方の端子から前記ツェナーダイオードの前記他方の端子に電流が流れることを特徴とする半導体装置。 - 前記負荷コイルの前記入力側コイルの他端に接続された外部電源と、
前記負荷コイルの前記入力側コイルを介して前記外部電源に接続された入力端子と、前記サイリスタの前記コレクタに接続された出力端子とを有する第2のスイッチング素子と、
一端が前記制御回路及び前記サイリスタの前記エミッタに接続され、他端が接地されたコンデンサとを更に含み、
前記第1のスイッチング素子がオフした場合に、前記外部電源から供給される電圧により前記第2のスイッチング素子がオンし、前記外部電源から前記サイリスタを介して前記コンデンサに電流が流れて前記コンデンサが充電され、
前記制御回路は、前記充電されたコンデンサを電源として前記第1のスイッチング素子のオン・オフを制御することを特徴とする請求項1に記載の半導体装置。 - 前記コンデンサには、前記制御回路に入力信号を与えるための無線モジュールが接続され、
前記無線モジュールは、前記コンデンサを電源として用いることを特徴とする請求項2に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006294207A JP4957183B2 (ja) | 2006-10-30 | 2006-10-30 | 裏面高耐圧集積回路を用いた半導体装置 |
US11/673,756 US7787225B2 (en) | 2006-10-30 | 2007-02-12 | Semiconductor apparatus using back-side high-withstand-voltage integrated circuit |
KR1020070098591A KR100924742B1 (ko) | 2006-10-30 | 2007-10-01 | 이면 고내압 집적회로를 사용한 반도체 장치 |
DE102007047727.0A DE102007047727B4 (de) | 2006-10-30 | 2007-10-05 | Halbleitervorrichtung, welche eine integrierte Schaltung mit hoher Rückseiten-Spannungsfestigkeit verwendet |
CNB2007101622774A CN100550379C (zh) | 2006-10-30 | 2007-10-08 | 使用背面高耐压集成电路的半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006294207A JP4957183B2 (ja) | 2006-10-30 | 2006-10-30 | 裏面高耐圧集積回路を用いた半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008112828A JP2008112828A (ja) | 2008-05-15 |
JP4957183B2 true JP4957183B2 (ja) | 2012-06-20 |
Family
ID=39265102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006294207A Active JP4957183B2 (ja) | 2006-10-30 | 2006-10-30 | 裏面高耐圧集積回路を用いた半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7787225B2 (ja) |
JP (1) | JP4957183B2 (ja) |
KR (1) | KR100924742B1 (ja) |
CN (1) | CN100550379C (ja) |
DE (1) | DE102007047727B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10651113B2 (en) | 2016-05-31 | 2020-05-12 | Mitsubishi Electric Corporation | Semiconductor apparatus, ignition device for internal combustion engine, and internal combustion engine system |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5157247B2 (ja) * | 2006-10-30 | 2013-03-06 | 三菱電機株式会社 | 電力半導体装置 |
JP4781400B2 (ja) * | 2008-06-20 | 2011-09-28 | 三菱電機株式会社 | 半導体装置 |
JP5171979B2 (ja) | 2011-04-08 | 2013-03-27 | 三菱電機株式会社 | 電子制御装置 |
JP5209090B2 (ja) * | 2011-07-04 | 2013-06-12 | 三菱電機株式会社 | 半導体装置 |
ITMI20131189A1 (it) * | 2013-07-16 | 2015-01-17 | Eldor Corp Spa | Sistema di accensione elettronica per un motore endotermico |
JP6275282B2 (ja) * | 2015-01-13 | 2018-02-07 | 三菱電機株式会社 | 半導体装置、その製造方法および半導体モジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04185282A (ja) * | 1990-11-20 | 1992-07-02 | Sanyo Electric Co Ltd | スイッチング電源用混成集積回路装置 |
JPH0563139A (ja) * | 1991-09-03 | 1993-03-12 | Fuji Electric Co Ltd | 半導体装置 |
JP3381617B2 (ja) * | 1998-04-03 | 2003-03-04 | 富士電機株式会社 | スイッチング電源制御用半導体装置およびそれを備えたスイッチング電源 |
JP3955396B2 (ja) * | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
JP3707942B2 (ja) * | 1998-12-17 | 2005-10-19 | 三菱電機株式会社 | 半導体装置とそれを用いた半導体回路 |
JP2002116237A (ja) * | 2000-10-10 | 2002-04-19 | Texas Instr Japan Ltd | 半導体集積回路 |
JP2002217416A (ja) * | 2001-01-16 | 2002-08-02 | Hitachi Ltd | 半導体装置 |
US6649978B2 (en) * | 2001-06-19 | 2003-11-18 | Koninklijke Philips Electronics N.V. | Semiconductor module having multiple semiconductor chips |
JP4489485B2 (ja) * | 2004-03-31 | 2010-06-23 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4565879B2 (ja) * | 2004-04-19 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2006203470A (ja) | 2005-01-19 | 2006-08-03 | Kyocera Corp | 高周波モジュール及び無線通信機器 |
-
2006
- 2006-10-30 JP JP2006294207A patent/JP4957183B2/ja active Active
-
2007
- 2007-02-12 US US11/673,756 patent/US7787225B2/en active Active
- 2007-10-01 KR KR1020070098591A patent/KR100924742B1/ko active IP Right Grant
- 2007-10-05 DE DE102007047727.0A patent/DE102007047727B4/de active Active
- 2007-10-08 CN CNB2007101622774A patent/CN100550379C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10651113B2 (en) | 2016-05-31 | 2020-05-12 | Mitsubishi Electric Corporation | Semiconductor apparatus, ignition device for internal combustion engine, and internal combustion engine system |
DE112016006919B4 (de) | 2016-05-31 | 2021-09-16 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Zündeinrichtung für Verbrennungsmotor und Verbrennungsmotorsystem |
Also Published As
Publication number | Publication date |
---|---|
US7787225B2 (en) | 2010-08-31 |
CN100550379C (zh) | 2009-10-14 |
DE102007047727B4 (de) | 2014-05-28 |
KR100924742B1 (ko) | 2009-11-05 |
US20080099838A1 (en) | 2008-05-01 |
KR20080039217A (ko) | 2008-05-07 |
DE102007047727A1 (de) | 2008-05-08 |
JP2008112828A (ja) | 2008-05-15 |
CN101174618A (zh) | 2008-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4957183B2 (ja) | 裏面高耐圧集積回路を用いた半導体装置 | |
CN105991118B (zh) | 点火器用半导体装置、点火器系统及点火线圈单元 | |
JP2010278188A (ja) | 半導体集積回路装置 | |
JP2006299988A (ja) | 内燃機関用点火装置 | |
JP2009147995A (ja) | 電力供給制御回路 | |
EP0757442A2 (en) | Ignition coil driver module | |
JP5095979B2 (ja) | 過電圧保護回路 | |
JP6922563B2 (ja) | 半導体装置 | |
JP4052815B2 (ja) | 車載イグナイタおよび車載イグナイタ用igbt | |
JP4360298B2 (ja) | 内燃機関用点火装置 | |
KR20110139886A (ko) | 인버터의 게이트 드라이브 회로 | |
US6787881B2 (en) | Integrated power device with improved efficiency and reduced overall dimensions | |
JP2001244463A (ja) | 半導体装置 | |
US8044652B2 (en) | Constant current control circuit | |
JP4983571B2 (ja) | 内燃機関用点火装置 | |
JP4590387B2 (ja) | グロープラグ駆動装置 | |
JPH09209892A (ja) | 内燃機関用点火装置 | |
JP2006166142A (ja) | 過電流保護回路及びこれを備えるインバータ | |
JP2008160283A (ja) | 負荷駆動回路およびそれを用いた点火装置 | |
JP2005191896A (ja) | 出力ドライブ回路を備える半導体集積回路 | |
JP6707874B2 (ja) | 半導体装置 | |
JP2011074905A (ja) | 内燃機関用の点火イグナイタ | |
JP2022148509A (ja) | ラッチアップ防止回路、半導体装置、電子機器、車両 | |
WO2017077814A1 (ja) | イグナイタ | |
JP2009281235A (ja) | 内燃機関用点火コイルのパワースイッチユニット |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090212 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090428 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111101 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120201 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120221 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120305 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150330 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4957183 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |