KR100704690B1 - 연마액 및 연마방법 - Google Patents
연마액 및 연마방법 Download PDFInfo
- Publication number
- KR100704690B1 KR100704690B1 KR1020047006562A KR20047006562A KR100704690B1 KR 100704690 B1 KR100704690 B1 KR 100704690B1 KR 1020047006562 A KR1020047006562 A KR 1020047006562A KR 20047006562 A KR20047006562 A KR 20047006562A KR 100704690 B1 KR100704690 B1 KR 100704690B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- polishing liquid
- liquid according
- insulating film
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- 238000000034 method Methods 0.000 title claims abstract description 48
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- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
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- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 89
- 239000004020 conductor Substances 0.000 claims description 68
- -1 organic acid esters Chemical class 0.000 claims description 61
- 239000011229 interlayer Substances 0.000 claims description 57
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
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- 229940100608 glycol distearate Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
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- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
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- 108010064470 polyaspartate Proteins 0.000 description 1
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- 229920000656 polylysine Polymers 0.000 description 1
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- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
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- 230000002265 prevention Effects 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
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- MQEFDQWUCTUJCP-UHFFFAOYSA-N pyrimidine-2,4,5,6-tetramine;sulfuric acid Chemical compound OS(O)(=O)=O.NC1=NC(N)=C(N)C(N)=N1 MQEFDQWUCTUJCP-UHFFFAOYSA-N 0.000 description 1
- YAAWASYJIRZXSZ-UHFFFAOYSA-N pyrimidine-2,4-diamine Chemical compound NC1=CC=NC(N)=N1 YAAWASYJIRZXSZ-UHFFFAOYSA-N 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
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- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- HUZZQXYTKNNCOU-UHFFFAOYSA-N triethyl(methoxy)silane Chemical compound CC[Si](CC)(CC)OC HUZZQXYTKNNCOU-UHFFFAOYSA-N 0.000 description 1
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- 229940005605 valeric acid Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2001-00334376 | 2001-10-31 | ||
| JP2001334376 | 2001-10-31 | ||
| JP2002010280 | 2002-01-18 | ||
| JPJP-P-2002-00010280 | 2002-01-18 | ||
| JPJP-P-2002-00160181 | 2002-05-31 | ||
| JP2002160181 | 2002-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050042038A KR20050042038A (ko) | 2005-05-04 |
| KR100704690B1 true KR100704690B1 (ko) | 2007-04-10 |
Family
ID=27347759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020047006562A Expired - Lifetime KR100704690B1 (ko) | 2001-10-31 | 2002-10-31 | 연마액 및 연마방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20050050803A1 (enExample) |
| JP (3) | JPWO2003038883A1 (enExample) |
| KR (1) | KR100704690B1 (enExample) |
| CN (2) | CN101058713B (enExample) |
| TW (2) | TWI314950B (enExample) |
| WO (1) | WO2003038883A1 (enExample) |
Families Citing this family (113)
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|---|---|---|---|---|
| TWI314950B (en) * | 2001-10-31 | 2009-09-21 | Hitachi Chemical Co Ltd | Polishing slurry and polishing method |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| US6858124B2 (en) * | 2002-12-16 | 2005-02-22 | 3M Innovative Properties Company | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
| JP4541674B2 (ja) * | 2003-09-30 | 2010-09-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2005123482A (ja) * | 2003-10-17 | 2005-05-12 | Fujimi Inc | 研磨方法 |
| JP4774669B2 (ja) * | 2003-10-27 | 2011-09-14 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| JP4428995B2 (ja) * | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
| KR100596865B1 (ko) * | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법 |
| US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| CN100468647C (zh) * | 2004-03-08 | 2009-03-11 | 旭硝子株式会社 | 研磨剂以及研磨方法 |
| JP2005294798A (ja) * | 2004-03-08 | 2005-10-20 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
| TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| KR100854483B1 (ko) * | 2004-09-14 | 2008-08-26 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ용 연마 슬러리 |
| WO2006030595A1 (ja) * | 2004-09-14 | 2006-03-23 | Hitachi Chemical Company, Ltd. | Ｃｍｐ用研磨スラリー |
| US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
| KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| EP1757419B1 (de) * | 2005-08-25 | 2012-10-17 | Freiberger Compound Materials GmbH | Verfahren, Vorrichtung und Slurry zum Drahtsägen |
| JP4390757B2 (ja) * | 2005-08-30 | 2009-12-24 | 花王株式会社 | 研磨液組成物 |
| US7708904B2 (en) * | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| JPWO2007029465A1 (ja) * | 2005-09-09 | 2009-03-19 | 旭硝子株式会社 | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
| US7572741B2 (en) * | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
| JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板 |
| US8512593B2 (en) * | 2005-11-04 | 2013-08-20 | Cheil Industries, Inc. | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
| KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법 |
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2002
- 2002-10-31 TW TW097100408A patent/TWI314950B/zh not_active IP Right Cessation
- 2002-10-31 JP JP2003541040A patent/JPWO2003038883A1/ja active Pending
- 2002-10-31 WO PCT/JP2002/011370 patent/WO2003038883A1/ja not_active Ceased
- 2002-10-31 CN CN2007101077532A patent/CN101058713B/zh not_active Expired - Fee Related
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- 2002-10-31 KR KR1020047006562A patent/KR100704690B1/ko not_active Expired - Lifetime
- 2002-10-31 CN CNB028265513A patent/CN100386850C/zh not_active Expired - Lifetime
- 2002-10-31 US US10/493,867 patent/US20050050803A1/en not_active Abandoned
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2007
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- 2011-11-18 US US13/299,699 patent/US8481428B2/en not_active Expired - Fee Related
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| US20050050803A1 (en) | 2005-03-10 |
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| US8481428B2 (en) | 2013-07-09 |
| JP2011205113A (ja) | 2011-10-13 |
| CN1610963A (zh) | 2005-04-27 |
| TWI314950B (en) | 2009-09-21 |
| KR20050042038A (ko) | 2005-05-04 |
| US20090156007A1 (en) | 2009-06-18 |
| JP5447437B2 (ja) | 2014-03-19 |
| CN100386850C (zh) | 2008-05-07 |
| TWI308926B (enExample) | 2009-04-21 |
| JP2008199036A (ja) | 2008-08-28 |
| US8084363B2 (en) | 2011-12-27 |
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