TWI314950B - Polishing slurry and polishing method - Google Patents
Polishing slurry and polishing method Download PDFInfo
- Publication number
- TWI314950B TWI314950B TW097100408A TW97100408A TWI314950B TW I314950 B TWI314950 B TW I314950B TW 097100408 A TW097100408 A TW 097100408A TW 97100408 A TW97100408 A TW 97100408A TW I314950 B TWI314950 B TW I314950B
- Authority
- TW
- Taiwan
- Prior art keywords
- honing
- acid
- insulating film
- interlayer insulating
- liquid
- Prior art date
Links
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- 238000005498 polishing Methods 0.000 title 2
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001334376 | 2001-10-31 | ||
| JP2002010280 | 2002-01-18 | ||
| JP2002160181 | 2002-05-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200831656A TW200831656A (en) | 2008-08-01 |
| TWI314950B true TWI314950B (en) | 2009-09-21 |
Family
ID=27347759
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091132305A TW200300168A (en) | 2001-10-31 | 2002-10-31 | Polishing fluid and polishing method |
| TW097100408A TWI314950B (en) | 2001-10-31 | 2002-10-31 | Polishing slurry and polishing method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091132305A TW200300168A (en) | 2001-10-31 | 2002-10-31 | Polishing fluid and polishing method |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20050050803A1 (enExample) |
| JP (3) | JPWO2003038883A1 (enExample) |
| KR (1) | KR100704690B1 (enExample) |
| CN (2) | CN100386850C (enExample) |
| TW (2) | TW200300168A (enExample) |
| WO (1) | WO2003038883A1 (enExample) |
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| JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| US6858124B2 (en) * | 2002-12-16 | 2005-02-22 | 3M Innovative Properties Company | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
| JP4541674B2 (ja) * | 2003-09-30 | 2010-09-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2005123482A (ja) * | 2003-10-17 | 2005-05-12 | Fujimi Inc | 研磨方法 |
| JP4774669B2 (ja) * | 2003-10-27 | 2011-09-14 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| JP4428995B2 (ja) * | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
| KR100596865B1 (ko) * | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의ｃｍｐ 방법 |
| US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| CN100468647C (zh) * | 2004-03-08 | 2009-03-11 | 旭硝子株式会社 | 研磨剂以及研磨方法 |
| JP2005294798A (ja) * | 2004-03-08 | 2005-10-20 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
| TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| KR100854483B1 (ko) * | 2004-09-14 | 2008-08-26 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ용 연마 슬러리 |
| US20080105651A1 (en) * | 2004-09-14 | 2008-05-08 | Katsumi Mabuchi | Polishing Slurry for Cmp |
| US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
| KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| EP1757419B1 (de) * | 2005-08-25 | 2012-10-17 | Freiberger Compound Materials GmbH | Verfahren, Vorrichtung und Slurry zum Drahtsägen |
| JP4390757B2 (ja) * | 2005-08-30 | 2009-12-24 | 花王株式会社 | 研磨液組成物 |
| WO2007029465A1 (ja) * | 2005-09-09 | 2007-03-15 | Asahi Glass Company, Limited | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
| US7708904B2 (en) * | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| US7572741B2 (en) | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
| JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板 |
| US8512593B2 (en) * | 2005-11-04 | 2013-08-20 | Cheil Industries, Inc. | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
| KR100827594B1 (ko) * | 2006-11-07 | 2008-05-07 | 제일모직주식회사 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법 |
| KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법 |
| JP4868840B2 (ja) * | 2005-11-30 | 2012-02-01 | Ｊｓｒ株式会社 | 半導体装置の製造方法 |
| TWI305802B (en) * | 2006-03-16 | 2009-02-01 | Epoch Material Co Ltd | Chemical mechanical polishing composition |
| KR20080108574A (ko) * | 2006-04-24 | 2008-12-15 | 히다치 가세고교 가부시끼가이샤 | Ｃｍｐ용 연마액 및 연마방법 |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| US7550092B2 (en) * | 2006-06-19 | 2009-06-23 | Epoch Material Co., Ltd. | Chemical mechanical polishing composition |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US8591764B2 (en) * | 2006-12-20 | 2013-11-26 | 3M Innovative Properties Company | Chemical mechanical planarization composition, system, and method of use |
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| TWI308926B (enExample) | 2009-04-21 |
| US20090156007A1 (en) | 2009-06-18 |
| US20120064721A1 (en) | 2012-03-15 |
| JPWO2003038883A1 (ja) | 2005-02-24 |
| CN101058713A (zh) | 2007-10-24 |
| US8084363B2 (en) | 2011-12-27 |
| TW200300168A (en) | 2003-05-16 |
| TW200831656A (en) | 2008-08-01 |
| JP2008199036A (ja) | 2008-08-28 |
| KR20050042038A (ko) | 2005-05-04 |
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