WO2009008431A1 - 金属膜用研磨液及び研磨方法 - Google Patents

金属膜用研磨液及び研磨方法 Download PDF

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Publication number
WO2009008431A1
WO2009008431A1 PCT/JP2008/062352 JP2008062352W WO2009008431A1 WO 2009008431 A1 WO2009008431 A1 WO 2009008431A1 JP 2008062352 W JP2008062352 W JP 2008062352W WO 2009008431 A1 WO2009008431 A1 WO 2009008431A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
metal film
metal
water
polishing liquid
Prior art date
Application number
PCT/JP2008/062352
Other languages
English (en)
French (fr)
Inventor
Kouji Haga
Masato Fukasawa
Jin Amanokura
Hiroshi Nakagawa
Original Assignee
Hitachi Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40228602&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2009008431(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Chemical Co., Ltd. filed Critical Hitachi Chemical Co., Ltd.
Priority to US12/668,096 priority Critical patent/US8501625B2/en
Priority to EP08777961A priority patent/EP2169710A4/en
Priority to JP2009522652A priority patent/JP5392080B2/ja
Priority to KR1020107000298A priority patent/KR101445429B1/ko
Publication of WO2009008431A1 publication Critical patent/WO2009008431A1/ja
Priority to US13/846,289 priority patent/US20130217229A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

　本発明は、金属膜用研磨液であって、 　前記金属膜用研磨液全体を１００重量％としたとき、７．０重量％以上の金属の酸化剤と、水溶性ポリマと、酸化金属溶解剤と、金属防食剤及び水を含有してなり、 　前記水溶性ポリマは、重量平均分子量が１５０，０００以上であり、ポリカルボン酸、ポリカルボン酸の塩及びポリカルボン酸エステルから選ばれる少なくとも１種である、 金属膜用研磨液に関する。これにより、１ｐｓｉ以下の低い研磨荷重下でも高速に研磨でき、研磨後の被研磨膜の平坦性に優れ、また、研磨開始初期から高い研磨速度が得られる金属膜用研磨液及びそれを用いた研磨方法を提供することができる。
PCT/JP2008/062352 2007-07-10 2008-07-08 金属膜用研磨液及び研磨方法 WO2009008431A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/668,096 US8501625B2 (en) 2007-07-10 2008-07-08 Polishing liquid for metal film and polishing method
EP08777961A EP2169710A4 (en) 2007-07-10 2008-07-08 METAL FILM LUBRICANT AND POLISHING METHOD
JP2009522652A JP5392080B2 (ja) 2007-07-10 2008-07-08 金属膜用研磨液及び研磨方法
KR1020107000298A KR101445429B1 (ko) 2007-07-10 2008-07-08 금속용 연마액 및 연마 방법
US13/846,289 US20130217229A1 (en) 2007-07-10 2013-03-18 Polishing liquid for metal film and polishing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007180928 2007-07-10
JP2007-180928 2007-07-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/846,289 Division US20130217229A1 (en) 2007-07-10 2013-03-18 Polishing liquid for metal film and polishing method

Publications (1)

Publication Number Publication Date
WO2009008431A1 true WO2009008431A1 (ja) 2009-01-15

Family

ID=40228602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062352 WO2009008431A1 (ja) 2007-07-10 2008-07-08 金属膜用研磨液及び研磨方法

Country Status (6)

Country Link
US (2) US8501625B2 (ja)
EP (1) EP2169710A4 (ja)
JP (1) JP5392080B2 (ja)
KR (1) KR101445429B1 (ja)
TW (2) TWI471364B (ja)
WO (1) WO2009008431A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2273537A1 (en) * 2008-04-15 2011-01-12 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same
JP2011020208A (ja) * 2009-07-15 2011-02-03 Hitachi Chem Co Ltd Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
WO2014013977A1 (ja) * 2012-07-17 2014-01-23 株式会社 フジミインコーポレーテッド 合金材料研磨用組成物及びそれを用いた合金材料の製造方法
JP2017057398A (ja) * 2016-10-07 2017-03-23 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法、及びその製造方法
JP2017101248A (ja) * 2017-01-13 2017-06-08 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
US10508222B2 (en) 2010-08-23 2019-12-17 Fujimi Incorporated Polishing composition and polishing method using same
CN110904458A (zh) * 2019-12-31 2020-03-24 苏州丰川电子科技有限公司 金属表面处理装置
CN110952097A (zh) * 2019-12-31 2020-04-03 苏州丰川电子科技有限公司 电子产品金属外壳的表面处理装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5392080B2 (ja) * 2007-07-10 2014-01-22 日立化成株式会社 金属膜用研磨液及び研磨方法
CN103333661B (zh) 2008-12-11 2015-08-19 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
JP5979872B2 (ja) * 2011-01-31 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
JP5979871B2 (ja) * 2011-03-09 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
TWI582184B (zh) * 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
WO2013137089A1 (en) * 2012-03-14 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic device, and lighting device
CN105378011B (zh) 2013-07-11 2020-07-07 巴斯夫欧洲公司 包含苯并三唑衍生物作为缓蚀剂的化学机械抛光组合物
US10752807B2 (en) * 2013-09-10 2020-08-25 Hitachi Chemical Company, Ltd Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
KR20180132893A (ko) * 2016-05-26 2018-12-12 후지필름 가부시키가이샤 연마액, 연마액의 제조 방법, 연마액 원액, 및 화학적 기계적 연마 방법
US11145544B2 (en) * 2018-10-30 2021-10-12 Taiwan Semiconductor Manufacturing Co., Ltd. Contact etchback in room temperature ionic liquid
US10964549B2 (en) * 2018-11-30 2021-03-30 Taiwan Semiconductor Manufacturing Company Limited Wafer polishing with separated chemical reaction and mechanical polishing

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JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
JP2004311565A (ja) * 2003-04-03 2004-11-04 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法

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US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP3111892B2 (ja) * 1996-03-19 2000-11-27 ヤマハ株式会社 研磨装置
CN101058713B (zh) 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
TWI259201B (en) * 2001-12-17 2006-08-01 Hitachi Chemical Co Ltd Slurry for metal polishing and method of polishing with the same
US20030219982A1 (en) * 2002-05-23 2003-11-27 Hitachi Chemical Co., Ltd CMP (chemical mechanical polishing) polishing liquid for metal and polishing method
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP5392080B2 (ja) * 2007-07-10 2014-01-22 日立化成株式会社 金属膜用研磨液及び研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
JP2004311565A (ja) * 2003-04-03 2004-11-04 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2273537A1 (en) * 2008-04-15 2011-01-12 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same
EP2273537A4 (en) * 2008-04-15 2012-07-25 Hitachi Chemical Co Ltd POLISHING SOLUTION FOR METALLIC FILMS AND METHOD OF POLISHING USING THE SAME
US8734204B2 (en) 2008-04-15 2014-05-27 Hitachi Chemical Company, Ltd. Polishing solution for metal films and polishing method using the same
JP2011020208A (ja) * 2009-07-15 2011-02-03 Hitachi Chem Co Ltd Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた研磨方法
US10508222B2 (en) 2010-08-23 2019-12-17 Fujimi Incorporated Polishing composition and polishing method using same
WO2014013977A1 (ja) * 2012-07-17 2014-01-23 株式会社 フジミインコーポレーテッド 合金材料研磨用組成物及びそれを用いた合金材料の製造方法
CN104471016A (zh) * 2012-07-17 2015-03-25 福吉米株式会社 合金材料研磨用组合物及使用其的合金材料的制造方法
JP2017057398A (ja) * 2016-10-07 2017-03-23 株式会社フジミインコーポレーテッド 研磨用組成物、それを用いた研磨方法、及びその製造方法
JP2017101248A (ja) * 2017-01-13 2017-06-08 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
CN110904458A (zh) * 2019-12-31 2020-03-24 苏州丰川电子科技有限公司 金属表面处理装置
CN110952097A (zh) * 2019-12-31 2020-04-03 苏州丰川电子科技有限公司 电子产品金属外壳的表面处理装置
CN110904458B (zh) * 2019-12-31 2024-03-29 苏州丰川电子科技有限公司 金属表面处理装置

Also Published As

Publication number Publication date
TW201345960A (zh) 2013-11-16
US20130217229A1 (en) 2013-08-22
JP5392080B2 (ja) 2014-01-22
US8501625B2 (en) 2013-08-06
TWI471364B (zh) 2015-02-01
US20100323584A1 (en) 2010-12-23
TW200911893A (en) 2009-03-16
JPWO2009008431A1 (ja) 2010-09-09
KR20100051610A (ko) 2010-05-17
EP2169710A4 (en) 2010-11-17
KR101445429B1 (ko) 2014-09-26
TWI471365B (zh) 2015-02-01
EP2169710A1 (en) 2010-03-31

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