WO2010017160A3 - Environmentally friendly polymer stripping compositions - Google Patents

Environmentally friendly polymer stripping compositions Download PDF

Info

Publication number
WO2010017160A3
WO2010017160A3 PCT/US2009/052641 US2009052641W WO2010017160A3 WO 2010017160 A3 WO2010017160 A3 WO 2010017160A3 US 2009052641 W US2009052641 W US 2009052641W WO 2010017160 A3 WO2010017160 A3 WO 2010017160A3
Authority
WO
WIPO (PCT)
Prior art keywords
environmentally friendly
aqueous
stripping compositions
friendly polymer
materials
Prior art date
Application number
PCT/US2009/052641
Other languages
French (fr)
Other versions
WO2010017160A2 (en
Inventor
Michael B. Korzenski
Lillian Tang (Ching-Hsuan)
Robert Hsu (Ming-Ann)
Original Assignee
Advanced Technology Materials, Inc.
Atmi Taiwan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials, Inc., Atmi Taiwan Co., Ltd. filed Critical Advanced Technology Materials, Inc.
Priority to CN2009801396802A priority Critical patent/CN102216854A/en
Publication of WO2010017160A2 publication Critical patent/WO2010017160A2/en
Publication of WO2010017160A3 publication Critical patent/WO2010017160A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Non-aqueous and semi-aqueous removal compositions for removing resist and/or other materials from microelectronic devices. The non-aqueous removal composition includes tetrahydrofurfuryl alcohol and at least one dibasic ester. The semi-aqueous removal composition includes tetrahydrofurfuryl alcohol, at least one dibasic ester, at least one corrosion inhibitor, and no more than 30 wt% water. The removal compositions effectively removes resist and/or other materials while not damaging the underlying low-k dielectric or metallic materials.
PCT/US2009/052641 2008-08-04 2009-08-04 Environmentally friendly polymer stripping compositions WO2010017160A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801396802A CN102216854A (en) 2008-08-04 2009-08-04 Environmentally friendly polymer stripping compositions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8597208P 2008-08-04 2008-08-04
US61/085,972 2008-08-04

Publications (2)

Publication Number Publication Date
WO2010017160A2 WO2010017160A2 (en) 2010-02-11
WO2010017160A3 true WO2010017160A3 (en) 2010-05-06

Family

ID=41664157

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/052641 WO2010017160A2 (en) 2008-08-04 2009-08-04 Environmentally friendly polymer stripping compositions

Country Status (3)

Country Link
CN (1) CN102216854A (en)
TW (1) TW201013338A (en)
WO (1) WO2010017160A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102289159A (en) * 2010-06-18 2011-12-21 拉姆科技有限公司 Composition for removing photoresist and method for forming semiconductor pattern by using the same
TWI548738B (en) 2010-07-16 2016-09-11 安堤格里斯公司 Aqueous cleaner for the removal of post-etch residues
JP6101421B2 (en) 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド Etching solution for copper or copper alloy
US9238850B2 (en) 2010-08-20 2016-01-19 Advanced Technology Materials, Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
KR101891363B1 (en) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. Composition for and method of suppressing titanium nitride corrosion
DE102011000322A1 (en) * 2011-01-25 2012-07-26 saperatec GmbH Separating medium, method and system for separating multilayer systems
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
CN102411269A (en) * 2011-11-18 2012-04-11 西安东旺精细化学有限公司 Stripping liquid composition of photoresist film
WO2013101907A1 (en) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
EP2814895A4 (en) 2012-02-15 2015-10-07 Entegris Inc Post-cmp removal using compositions and method of use
JP2015517691A (en) 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド Composition and process for stripping photoresist from a surface comprising titanium nitride
KR102118964B1 (en) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Compositions for cleaning iii-v semiconductor materials and methods of using same
CN103076725A (en) * 2013-01-31 2013-05-01 北京七星华创电子股份有限公司 Solution for removing photoresist and application of solution
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
CN111394100A (en) 2013-06-06 2020-07-10 恩特格里斯公司 Compositions and methods for selectively etching titanium nitride
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
SG10201801575YA (en) 2013-08-30 2018-03-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (en) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US11091727B2 (en) * 2018-07-24 2021-08-17 Versum Materials Us, Llc Post etch residue cleaning compositions and methods of using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
WO1997003381A1 (en) * 1995-07-07 1997-01-30 Olin Microelectronic Chemicals, Inc. Non-corrosive photoresist stripper composition
US5909744A (en) * 1996-01-30 1999-06-08 Silicon Valley Chemlabs, Inc. Dibasic ester stripping composition
WO2004030038A2 (en) * 2002-09-26 2004-04-08 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545353A (en) * 1995-05-08 1996-08-13 Ocg Microelectronic Materials, Inc. Non-corrosive photoresist stripper composition
KR101251594B1 (en) * 2006-03-23 2013-04-08 주식회사 동진쎄미켐 Chemical rinse composition for removing resist stripper

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617251A (en) * 1985-04-11 1986-10-14 Olin Hunt Specialty Products, Inc. Stripping composition and method of using the same
WO1997003381A1 (en) * 1995-07-07 1997-01-30 Olin Microelectronic Chemicals, Inc. Non-corrosive photoresist stripper composition
US5909744A (en) * 1996-01-30 1999-06-08 Silicon Valley Chemlabs, Inc. Dibasic ester stripping composition
WO2004030038A2 (en) * 2002-09-26 2004-04-08 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof

Also Published As

Publication number Publication date
CN102216854A (en) 2011-10-12
TW201013338A (en) 2010-04-01
WO2010017160A2 (en) 2010-02-11

Similar Documents

Publication Publication Date Title
WO2010017160A3 (en) Environmentally friendly polymer stripping compositions
WO2007120259A3 (en) Formulations for removing copper-containing post-etch residue from microelectronic devices
TW200718775A (en) Composition and method for removing thick film photoresist
WO2009026324A3 (en) Composition and method for removing ion-implanted photoresist
EP1178359A3 (en) Stripping composition
TW200629012A (en) Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
WO2011019189A3 (en) Resist stripping solution composition, and method for stripping resist by using same
WO2012051380A3 (en) Composition for and method of suppressing titanium nitride corrosion
WO2007047365A3 (en) Metals compatible photoresist and/or sacrificial antireflective coating removal composition
EP1914296A3 (en) Stripper containing an acetal or a ketal for removing post-etched phot-resist, etch polymer and residue
MY163132A (en) Cleaning formulations
WO2015187675A3 (en) Anti-reflective coating cleaning and post-etch residue removal composition having metal, dielectric and nitride compatibility
TW200639595A (en) Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
TW200708597A (en) Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition
MY127401A (en) Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
WO2006124445A3 (en) Oil-in-water emulsified remover
TW200736856A (en) Dynamic multi-purpose composition for the removal of photoresists and method for its use
EP1612858A3 (en) Composition for stripping and cleaning and use thereof
WO2016042408A3 (en) Compositions for etching titanium nitride having compatability with silicon germanide and tungsten
EP1128222A3 (en) Photoresist stripping composition
MY165756A (en) SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-k DIELECTRICS
WO2013025619A3 (en) Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
EP1975987A3 (en) Methods for stripping material for wafer reclamation
AU2003216422A8 (en) Methods and compositions for removing residues and substances from substrates using environmentally friendly solvents
WO2004081124A3 (en) Water-in-oil emulsion

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980139680.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09805414

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09805414

Country of ref document: EP

Kind code of ref document: A2