CN102289159A - The composition for removing a photoresist formed by the method and the semiconductor pattern - Google Patents

The composition for removing a photoresist formed by the method and the semiconductor pattern Download PDF

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CN102289159A
CN102289159A CN 201010207338 CN201010207338A CN102289159A CN 102289159 A CN102289159 A CN 102289159A CN 201010207338 CN201010207338 CN 201010207338 CN 201010207338 A CN201010207338 A CN 201010207338A CN 102289159 A CN102289159 A CN 102289159A
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composition
photoresist
weight
compound
ether
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CN 201010207338
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Chinese (zh)
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吉埈仍
张湧守
朴正濬
李锡浩
梁元模
金旼永
金裕静
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拉姆科技有限公司
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Abstract

本发明公开了用于除去光致抗蚀剂的组合物和形成半导体图案的方法。 The present invention discloses a method for removing the photoresist composition and formation of the semiconductor pattern. 基于所述组合物的总量,所述组合物包含约3%至8%重量比的胺氧化物、约40%至60%重量比的醚化合物、约3%至20%重量比的胺化合物、约0.1%至10%重量比的抗腐蚀剂和剩余量的去离子水。 Based on the total of the composition, said composition comprising from about 3-8% by weight of the amine oxide ratio of from about 40 to 60% by weight of the ether compound, about 3-20% by weight of the amine compound , about 0.1% to 10% by weight and the ratio of the remaining anti-corrosive amount of deionized water. 可减少对光致抗蚀剂下面的层的损坏,并且可有效地除去光致抗蚀剂以及金属蚀刻残留物和可氧化的蚀刻残留物。 Damage can be reduced below the photoresist layer, and can effectively remove photoresist and metal etch residues and oxidizable etch residue.

Description

用于除去光致抗蚀剂的组合物及利用其形成半导体图案的 The composition for removing a photoresist and a semiconductor pattern which is formed using

方法 method

[0001] 发明背景 [0001] Background of the Invention

[0002] 1.领域 [0002] 1. FIELD

[0003] 示例性实施方案涉及用于除去光致抗蚀剂的组合物及利用其形成半导体图案的方法。 [0003] An exemplary embodiment relates to a composition for removing a photoresist formed by the method and the semiconductor pattern. 更具体地,示例性实施方案涉及用于有效地除去金属蚀刻残留物和可氧化的蚀刻残留物的用于除去光致抗蚀剂的组合物,以及利用其形成半导体图案的方法 More particularly, exemplary embodiments relate to methods for efficiently removing for removing etch residue and oxidizable metal etch residues photoresist compositions, and the use of which is formed semiconductor pattern

[0004] 2.相关领域描述 [0004] 2. Description of Related Art

[0005] 半导体装置要求具有高度集成的结构。 [0005] The semiconductor device having a highly integrated structural requirements. 对于该要求的回应,已经开发出半导体装置来降低设计规则和增加布线的集成度。 The response to this demand, semiconductor devices have been developed to reduce the design rules and increase the degree of integration of wiring. 特别地,在形成精密电路过程中形成光致抗蚀剂层的方法成为了决定半导体装置产率的重要方法。 In particular, the method of the photoresist layer formed during the formation of a fine circuit becomes an important means to determine the yield of the semiconductor device. 光致抗蚀剂层的敏感性、显影后的对比度、分辨率、对衬底的粘合性、残留层性质等直接影响进行蚀刻方法随后除去光致抗蚀剂层以后所形成的精密电路的质量。 Directly affect the sensitivity of the photoresist layer, after the development contrast, resolution, adhesion to the substrate, the nature of the residual layer after the etching process precision circuit subsequently removing the photoresist layer formed quality. 通常,借助利用光致抗蚀剂组合物的光刻法的形成图案的应用方法如下。 Typically, a pattern formed by using the method of application of photolithography of the photoresist composition is as follows.

[0006] 首先,可以在包含要形成图案的绝缘层或导电层的衬底上形成有机层,即光致抗蚀剂层。 [0006] First, an organic layer may be formed on a substrate comprising an insulating layer or a conductive layer to be patterned, i.e. the photoresist layer. 光致抗蚀剂层在碱性溶液中的溶解性可以在暴露于UV或X-射线后发生改变。 The solubility of the photo-resist layer in the alkaline solution may change upon exposure to UV or X- rays. 可以在光致抗蚀剂层上放置具有用于选择性暴露该光致抗蚀剂层的期望部分的图案的掩模(mask),然后通过该掩模可以使光致抗蚀剂层选择性地暴露于UV或X-射线。 May be placed on the photoresist layer for selectively exposing a mask having the desired pattern portion of the photo-resist layer (mask), it may then be selectively photoresist layer through the mask exposure to UV or X- rays. 暴露以后,可以进行显影方法以除去在碱性溶液中具有较高溶解性的部分(正型(positive-type)光致抗蚀剂组合物的暴露部分),同时保留具有较低溶解性的部分以形成光致抗蚀剂图案。 After exposure, development method may be performed to remove a portion having a higher solubility (positive (positive-type) of the photoresist composition exposed portion) in the alkaline solution, while the remaining portions having low solubility to form a photoresist pattern. 通过由此形成的光致抗蚀剂图案可以将绝缘层或导电层的暴露部分进行蚀刻。 It can be exposed by partially etching the photoresist pattern to thereby form an insulating layer or a conductive layer. 完成蚀刻方法之后,可以除去保留的光致抗蚀剂图案以获得形成各种布线、电极等所需的绝缘图案或导电图案。 After completion of the etching method, the photoresist pattern is removed to obtain a reservation form an insulating pattern or a conductive pattern required by the various wirings, electrodes.

[0007] 已经公开了各种类型的光致抗蚀剂组合物。 [0007] Various types of compositions have been disclosed in the photoresist composition. 在美国专利3,046,118号、4,115,128 号和4,173,470号以及日本专利特许公开sho 62-28457中公开了光致抗蚀剂组合物, 其包含甲酚-甲醛酚醛清漆树脂和被萘醌二叠氮官能团取代的光敏材料。 In U.S. Patent No. 3,046,118, No. 4,115,128 and No. 4,173,470 and in Japanese Patent Laid-Open sho 62-28457 discloses a photoresist composition comprising a cresol - formaldehyde novolac novolak resin and a naphthoquinone diazide functional group substituted with a photosensitive material. 在美国专利5,648,194号中公开了光致抗蚀剂组合物,其包含碱溶性树脂、邻萘醌二叠氮磺酸酯和乙烯基醚化合物。 Disclosed in U.S. Patent No. 5,648,194 a photoresist composition comprising an alkali-soluble resin, ortho-naphthoquinone diazide sulfonic acid ester and a vinyl ether compound. 美国专利5,468,590号公开了光致抗蚀剂组合物,其包含通过利用醌二叠氮化合物制备的碱溶性树脂和多酚;美国专利5,413,895号公开了光致抗蚀剂组合物,其包含酚醛清漆树脂、醌二叠氮化合物和多酚并具有改进的性质。 U.S. Patent No. 5,468,590 discloses a photoresist composition comprising an alkali-soluble resin and a polyphenol prepared by using a quinone diazide compound; U.S. Patent No. 5,413,895 discloses a photoresist composition comprising a novolak resin, a quinonediazide compound and polyphenol and have improved properties.

[0008] 在光刻法中完成形成图案方法(patterning process)之后,可以利用包含有机溶齐U、酸性或中性溶液、有机酸等的剥离(Stripping)组合物来除去光致抗蚀剂图案。 After [0008] completion of a pattern forming method (patterning process) in photolithography, may be utilized (Stripping) release composition comprising a homogeneous organic solvent U, an acidic or neutral solution, to remove organic acids photoresist pattern . 由于半导体装置要求高度集成,所以金属布线的厚度逐渐减小并且产生难以除去的聚合物。 Since the semiconductor devices require highly integrated, the thickness of the metal wire is gradually reduced and the polymer produced are difficult to remove. 因此, 利用常规使用的剥离组合物来有效并彻底地除去光致抗蚀剂残留物逐渐变得更加困难。 Thus, using the stripping compositions conventionally used to efficiently and completely remove the photoresist residues become progressively more difficult.

[0009] 光致抗蚀剂残留物可以包括进行蚀刻方法后留在衬底上的光致抗蚀剂、留在布线或导通孔(via hole)侧壁上的聚合物、留在导通孔侧壁和底部上的有机金属聚合物或金属氧化物等。 [0009] photo photoresist remaining on the substrate may include a resist residue after etching method, leaving the polymer on the sidewalls of the wiring or the via hole (via hole), to stay in the ON via sidewall organometallic polymer and a metal oxide or the like on the bottom. [0010] 发明概述 [0010] Summary of the Invention

[0011] 示例性实施方案提供了用于除去光致抗蚀剂的组合物,该组合物有效地除去留在衬底上的蚀刻残留物,特别是金属蚀刻残留物和可氧化的蚀刻残留物以及光致抗蚀剂,同时减少对金属层、氧化物层等的损坏。 [0011] Exemplary embodiments provide a composition for removing a photoresist, which composition is effective in removing the remaining etch residues on the substrate, particularly metal etch residues and oxidizable etch residue and a photoresist, and reduce damage to the metal layer, an oxide layer or the like.

[0012] 示例性实施方案提供通过利用上述用于除去光致抗蚀剂的组合物来形成具有良好质量的半导体图案的方法。 [0012] Exemplary embodiments provide a method by using the above-described composition for removing a photoresist to form a semiconductor pattern having the good quality.

[0013] 根据示例性实施方案,基于组合物的总量,用于除去光致抗蚀剂的组合物包含约3 %至8 %重量比的胺氧化物、约40 %至60 %重量比的醚化合物、约3 %至20 %重量比的胺化合物、约0. 至10%重量比的抗腐蚀剂和剩余量的去离子水。 [0013] According to an exemplary embodiment, based on the total composition, the composition for removing photoresist comprising from about 3-8% by weight of the amine oxide ratio of from about 40 to 60% by weight of ether compounds, from about 3% to 20% by weight ratio of the amine compound, anticorrosive from about 0.5 to 10% by weight and the remaining amount of deionized water.

[0014] 在示例性实施方案中,胺氧化物可以包括选自2,6_ 二甲基吡啶-N-氧化物、批啶-N-氧化物和N-甲基吗啉N-氧化物中的至少一种。 [0014] In an exemplary embodiment, may include the amine oxide selected from pyridine -N- 2,6_ dimethyl-oxide, piperidine batch -N- oxide and N- methylmorpholine N- oxide at least one.

[0015] 在示例性实施方案中,醚化合物可以包括选自二甘醇一甲醚、二甘醇二甲醚、二甘醇一乙醚、二甘醇二乙醚和二甘醇一丁基醚中的至少一种。 [0015] In an exemplary embodiment, the ether compound may include one selected from diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether and diethylene glycol butyl ether at least one.

[0016] 在示例性实施方案中,胺化合物可以包括选自单乙醇胺、二乙醇胺、三乙醇胺、甘氨酸、二甘醇胺和单异丙醇胺中的至少一种。 [0016] In an exemplary embodiment, the amine compound may include one selected from monoethanolamine, diethanolamine, triethanolamine, at least one of glycine, diglycolamine and the monoisopropanolamine.

[0017] 在示例性实施方案中,基于组合物的总量,组合物还可以包含约1 %至3 %重量比的羟胺化合物。 [0017] In an exemplary embodiment, based on the total composition, the composition may further comprise about 1% to 3% by weight ratio of the hydroxylamine compound. 羟胺化合物可以包括选自羟胺、二乙基羟胺和乙氨基乙醇中的至少一种。 Hydroxylamine compound may include those selected from hydroxylamine, diethylhydroxylamine and at least one-ethylamino ethanol.

[0018] 在示例性实施方案中,抗腐蚀剂可以包括选自抗坏血酸、儿茶酚、苯三酚、氢醌和间苯二酚中的至少一种。 [0018] In an exemplary embodiment, the anti-corrosion agent may include those selected from ascorbic acid, at least one catechol, pyrogallol, hydroquinone and resorcinol in.

[0019] 在示例性实施方案中,基于组合物的总量,组合物还可以包含约0. 至0. 5%重量比的吡咯化合物。 [0019] In an exemplary embodiment, based on the total composition, the composition may further comprise from about 0.5 to 0.5% by weight of the azole compound. 吡咯化合物可以包括选自苯并三唑、咪唑和氨基四唑中的至少一种。 Pyrrole may comprise at least one compound selected from benzotriazole, imidazole and amino tetrazole.

[0020] 根据示例性实施方案,形成半导体图案的方法包括以下步骤:在衬底上的薄膜上形成光致抗蚀剂图案,通过利用光致抗蚀剂图案作为掩模来蚀刻该薄膜以形成薄膜图案, 以及利用用于除去光致抗蚀剂的组合物来除去光致抗蚀剂图案,该组合物包含胺氧化物、 醚化合物、胺化合物、抗腐蚀剂和去离子水。 [0020] According to an exemplary embodiment, a method of forming a semiconductor pattern comprises the steps of: forming a photoresist pattern by using the photoresist pattern as a mask for etching the thin film on the substrate to form a film on the a thin film pattern, and the use of the composition for removing a photoresist to remove the photoresist pattern, the composition comprising an amine oxide, ether compounds, amine compounds, anti-corrosion agents and deionized water.

[0021] 在示例性实施方案中,基于组合物的总量,用于除去光致抗蚀剂的组合物包含约3 %至8 %重量比的胺氧化物、约40 %至60 %重量比的醚化合物、约3 %至20 %重量比的胺化合物、约0. 至10%重量比的抗腐蚀剂和剩余量的去离子水。 [0021] In an exemplary embodiment, based on the total composition, the composition for removing photoresist comprising from about 3-8% by weight of the amine oxide ratio of from about 40 to 60% by weight ether compounds, from about 3-20% by weight of the amine compound, anticorrosive from about 0.5 to 10% by weight and the remaining amount of deionized water.

[0022] 在示例性实施方案中,薄膜可以是金属氧化物薄膜和氮化物薄膜中的至少一种。 [0022] In an exemplary embodiment, the film may be at least one metal oxide thin film and a nitride film.

[0023] 根据用于除去光致抗蚀剂的组合物的示例性实施方案,可以减少对金属层、氧化物层等的损坏,同时提高诸如金属蚀刻残留物和可氧化的蚀刻残留物的蚀刻残留物以及光致抗蚀剂的除去效率。 [0023] According to an exemplary embodiment of the composition for removing a photoresist, can reduce damage to the metal layer, an oxide layer or the like, while improving a metal etch residues such as etching and oxidizable etch residues the residue and the efficiency of removal of the photoresist.

[0024] 附图简述 [0024] BRIEF DESCRIPTION

[0025] 结合附图将从下述详细描述更清楚地理解示例性实施方案。 [0025] more clearly understood exemplary embodiments will be described in detail in conjunction with the following drawings. 图1至5表示本文所述的非限制性示例性实施方案。 1 to 5 shows a non-limiting exemplary embodiments described herein.

[0026] 图1显示在应用根据实施例1制备的用于除去光致抗蚀剂的组合物之后,利用场发射扫描电子显微镜在包含金属图案的晶片(wafer)上拍摄的照片。 [0026] Figure 1 shows the application according to the following composition for removing a photoresist prepared in Example 1, using field emission scanning electron microscope photograph taken on the wafer (the wafer) comprises a metal pattern.

[0027] 图2显示在应用根据实施例1制备的用于除去光致抗蚀剂的组合物之后,晶片的金属接触(contact)上的照片。 [0027] Figure 2 shows the application according to the following composition for removing a photoresist prepared in Example 1, the photographs of the wafer on the metal contact (contact). [0028] 图3和4显示在应用根据比较实施例2和3制备的用于除去光致抗蚀剂的组合物之后,利用场发射扫描电子显微镜在包含金属图案的晶片上拍摄的照片。 [0028] Figures 3 and 4 show Comparative Examples 2 and 3 in accordance with the application after removal of the photoresist composition used, prepared using field emission scanning electron microscope photograph taken on the wafer comprising a metal pattern.

[0029] 图5显示在应用根据比较实施例2制备的用于除去光致抗蚀剂的组合物之后,晶片的金属接触上的照片。 After [0029] Figure 5 shows the composition for removing a photoresist prepared in Comparative Example 2 in accordance with the application, photographs of the metal in contact with the wafer.

[0030] 示例性实施方案详述 [0030] Detailed Description of exemplary embodiments

[0031] 在下文中将更详尽地描述各种示例性实施方案,其中示出了某些示例性实施方案。 [0031] more detailed description of various exemplary embodiments hereinafter, which illustrates certain exemplary embodiments. 然而,示例性实施方案可以表现为许多不同的形式而不应解释为局限于本文所列举的示例性实施方案。 However, exemplary embodiments can be expressed in many different forms and should not be construed as limited to the exemplary embodiments recited herein. 相反地,提供这些示例性实施方案以使本公开详尽且完整,并且向本领域技术人员完全地传达示例性实施方案的范围。 Rather, these exemplary embodiments so that this disclosure will be thorough and complete, and will fully convey the scope of the exemplary embodiments to those skilled in the art.

[0032] 应当理解,当元件或层意指在另一元件或层“上”,“连接至”或“耦合至”另一元件或层时,该元件或层可以直接在另一元件或层上,直接连接至或耦合至另一元件或层,或者可以存在中间元件或层。 [0032] It should be understood that when an element or layer is meant in the "on" another element or layer, "connected to" or "coupled to" another element or layer, the element or layer can be directly on another element or layer, on, connected or coupled to the other element or layer or intervening elements or layers may be present. 相反地,当元件或层意指“直接”在另一元件或层“上”,“直接连接至”或“直接耦合至”另一元件或层时,则不存在中间元件或层。 In contrast, when an element or layer, means "direct" another element or layer "on," "directly connected to" or "directly coupled to" another element or layer, no intervening elements or layers present. 相同的数字始终指相同的元件。 Like numbers refer to like elements. 本文所用的术语“和/或”包括一个或多个相关的所列项目的任何和全部组合。 As used herein, the term "and / or" includes one or more of the associated listed items any and all combinations thereof.

[0033] 应当理解,尽管术语第一、第二、第三等可以在本文中用来描述各种元件、组分、区域、层和/或部分,但这些元件、组分、区域、层和/或部分不应受这些术语的限制。 [0033] It should be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers and / or sections herein, these elements, components, regions, layers and / or sections should not be limited by these terms. 这些术语仅用来区分一个元件、组分、区域、层或部分与另一区域、层或部分。 These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. 因此,下述讨论的第一元件、组分、区域、层或部分可以称作第二元件、组分、区域、层或部分而没有背离示例性实施方案的教导。 Thus, a first element discussed below, component, region, layer or section may be termed a second element, component, region, layer or section without departing from the teachings of exemplary embodiments.

[0034] 本文可以使用空间相关术语,如“低于”、“下面”、“下部”、“上面”、“上部”等以易于描述一元件或特征与其它元件或特征的关系。 [0034] Spatially relative terms may be used herein, such as "lower", "below", "lower", "above", "upper" and the like in order to easily describe relations an element or feature's relationship to other elements or features. 应当理解,空间相关术语旨在包括所用或所操作装置的不同方位。 It should be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operated. 例如,如果将装置翻转,描述为在其它元件或特征“下面”或“低于” 其它元件或特征的元件则定位于其它元件或特征的“上面”。 For example, if the device, elements described as "below" or "lower" other elements or features element is positioned "above" the other elements or features. 因此,示例性术语“下面”可以包括上面和下面两个方位。 Thus, the exemplary term "below" can encompass both an orientation of above and below. 此外,可以将装置定位(旋转90度或朝其它方位)并用本文所用的空间相对描述符相应地进行说明。 Further, the device may be otherwise oriented (rotated 90 degrees or at other orientations toward) As used herein, and space relative descriptors accordingly be described.

[0035] 本文所用的术语是仅用于描述具体的示例性实施方案并不旨在限制示例性实施方案。 [0035] As used herein, the terms are merely used to describe particular exemplary embodiments not intended to limit the exemplary embodiments. 除非上下文明确说明,本文所用的单数形式“一个(a)”、“一个(an)”和“这个(the)” 还旨在包括复数形式。 Unless the context clearly described, as used herein, the singular forms "a, (A)", "a (AN)" and "the (The)" is also intended to include the plural forms. 还应当理解,术语“包含(comprise)”和/或“包含(comprising)”, 当用在本说明书中时,指定存在指定的特征、整数、步骤、操作、元件和/或组分,但不排除存在或添加一种或多种其它特征、整数、步骤、操作、元件、组分和/或其群组。 It should also be understood that the terms "comprise (of comprise)" and / or "including (comprising,)", when used in this specification, specify the presence of the specified features, integers, steps, operations, elements, and / or components, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0036] 示例性实施方案为理想的示例性实施方案(和中间结构)的示意例证。 [0036] An exemplary embodiment of a schematic illustration of an exemplary embodiment of an ideal (and intermediate structures). 就此而言, 诸如制造技术和/或偏差所引起的例证的形式变化是预期的。 In this regard, such as in the form of manufacturing techniques and / or deviation caused illustration change is contemplated. 因此,示例性实施方案不应被理解成限于本文所示区域的具体形式,而是包括诸如制造所引起的形式偏差。 Thus, exemplary embodiments should not be construed as limited to the particular forms shown and described herein region, but including forms such as deviations from manufacturing.

[0037] 除非另有定义,本文所用的所有术语(包括技术和科学术语)与示例性实施方案所属领域的技术人员通常所理解的含义相同。 [0037] Unless otherwise defined, all terms used herein (including technical and scientific terms) Field exemplary embodiment skilled in the art the same meaning as commonly understood. 还应当理解,诸如在常用字典中所定义的那些术语的术语应当被解释成具有与它们在相关领域的上下文中的含义一致的含义,并且除非本文清楚地定义,术语不会以理想或过于形式的方式进行解释。 It should also be understood that terms, such as those terms are defined in commonly used dictionaries, it should be interpreted as having consistent with their meaning in the context of the relevant art meaning, and unless expressly defined herein, the term will not idealized or overly formal way to explain.

[0038] 下文将详细地描述本发明的示例性实施方案。 [0038] Hereinafter, exemplary embodiments of the present invention will be described in detail.

[0039] 用于除去光致抗蚀剂的组合物[0040] 根据示例性实施方案,用于除去光致抗蚀剂的组合物可以包含胺氧化物、醚化合物、胺化合物、抗腐蚀剂和剩余量的去离子水。 [0039] The composition for removing a photoresist [0040] According to an exemplary embodiment, the composition for removing a photoresist may comprise amine oxides, ether compounds, amine compounds, anti-corrosion agents, and the remaining amount of deionized water. 特别地,基于组合物的总量,该组合物可以包含约3 %至8 %重量比的胺氧化物、约40 %至60 %重量比的醚化合物、约3 %至20 %重量比的胺化合物、约0. 至10%重量比的抗腐蚀剂和剩余量的去离子水。 In particular, based on the total composition, the composition may comprise from about 3-8% by weight of the amine oxide ratio of about 40% to 60% by weight ratio of the ether compound, about 3-20% by weight of the amine compounds, from about 0.5 to 10% by weight and the ratio of the remaining anti-corrosive amount of deionized water.

[0041] 根据示例性实施方案,组合物可以包含胺氧化物。 [0041] According to an exemplary embodiment, the composition may comprise an amine oxide. 胺氧化物可以改进除去在蚀刻方法中所产生的聚合物的效率而不损坏衬底上形成的薄膜结构。 Amine oxides can be removed without damaging the improved film structure formed on a substrate in the etching efficiency of the polymer produced in the process. 胺氧化物可以包括2, 6-二甲基吡啶-N-氧化物、吡啶-N-氧化物和N-甲基吗啉-N-氧化物等。 Amine oxides may include 2, 6-lutidine -N--oxide, pyridine oxide, and -N- -N- N- methylmorpholine oxide and the like. 这些化合物可单独或组合使用。 These compounds may be used alone or in combination.

[0042] 当组合物包含少于约3%重量比的胺氧化物时,不能完全地除去聚合物。 [0042] When the composition comprises less than about 3% by weight of the amine oxide ratios, the polymer can not be completely removed. 当胺氧化物的量超过约8%重量比时,聚合物的除去效率不能有进一步的改进,并且可以增加组合物的粘度。 When the amount of amine oxide exceeds about 8% by weight, the removal efficiency of the polymer can not be further improved, and can increase the viscosity of the composition. 因此,基于组合物的总量,包含在组合物中的胺氧化物的量可为以约3%至8%重 Thus, based on the total composition, the amount of amine oxide is contained in the composition may be from about 3-8% weight

量比。 Ratio.

[0043] 根据示例性实施方案,组合物可以包含醚化合物。 [0043] According to an exemplary embodiment, the composition may contain an ether compound. 醚化合物可以溶解膨胀的聚合物和与衬底分离的光致抗蚀剂,并且可以起作用以促进要除去的聚合物的膨胀。 Ether compounds may be dissolved and swollen polymer substrate separated from the photoresist, and may function to facilitate swelling of the polymer to be removed. 此外,醚化合物可以防止分离的光致抗蚀剂和蚀刻残留物再吸附至衬底表面。 In addition, the ether compound can prevent separation of the photoresist and etching residue was adsorbed to the surface of the substrate. 醚化合物可以包括二甘 Ether compound may include diethylene glycol

醇一甲醚、二甘醇二甲醚、二甘醇一乙醚、二甘醇二乙醚和二甘醇一丁基醚等。 An alcohol ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether and diethylene glycol monobutyl ether and the like. 这些化合物可以单独或组合使用。 These compounds may be used alone or in combination.

[0044] 当组合物包含少于约40%重量比的醚化合物时,不能使光致抗蚀剂和蚀刻残留物完全溶解在组合物中,或者分离的光致抗蚀剂可以被再吸附至衬底上。 [0044] When the composition comprises less than about 40% by weight ratio of the ether compound, can not make the photoresist and the photoresist etch residue was completely dissolved in the composition, or may be isolated to re-adsorbed on the substrate. 当组合物中包含的醚化合物超过约60%重量比时,光致抗蚀剂的除去效率不能有进一步的增强,并且不能防止其它组分的稀释。 When the ether compound contained in the composition is more than about 60% by weight, the photoresist removal efficiency can not be further enhanced, and diluted other components can not be prevented. 因此,基于组合物的总量,包含在组合物中的醚化合物的量可以为约40%至60%重量比。 Thus, based on the total composition, the amount of the ether compound contained in the composition ratio may be about 40% to 60% by weight.

[0045] 根据示例性实施方案,组合物可以包含胺化合物。 [0045] According to an exemplary embodiment, the composition may comprise an amine compound. 要除去的光致抗蚀剂可以被胺化合物容易地膨胀或削弱。 To photoresist can be removed easily expanded or weaken the amine compound. 胺化合物可以起作用以除去在蚀刻方法中所产生的聚合物并且控制该聚合物的除去速率。 Amine compound may function to remove the polymer produced in the etching process and the removal rate controlling polymer. 胺化合物可以包括单乙醇胺、二乙醇胺、三乙醇胺、甘氨酸、二甘醇胺和单异丙醇胺等。 Amine compounds may include monoethanolamine, diethanolamine, triethanolamine, glycine, diethylene glycol mono-amine and isopropanol amine. 这些化合物可以单独或组合使用。 These compounds may be used alone or in combination.

[0046] 胺化合物还可以包括羟胺化合物。 [0046] The amine compound may further comprise a hydroxylamine compound. 羟胺化合物可以包括羟胺、二乙基羟胺和乙氨 Hydroxylamine compound may include hydroxylamine, diethylhydroxylamine and ethylamino

基乙醇等。 Ethanol and the like groups.

[0047] 当组合物包含少于约3%重量比的胺化合物时,除去光致抗蚀剂所需的时间段可以变得更长或者不能除去光致抗蚀剂。 [0047] When the composition comprises less than about 3% by weight ratio of amine compound to remove the time period required for the photo-resist may become longer or the photoresist can not be removed. 当胺化合物的量超过约20%重量比时,可以损坏衬底或图案层。 When the amount of the amine compound exceeds about 20% by weight, it may damage the substrate or the pattern layer. 因此,基于组合物的总量,包含在组合物中的胺化合物的量可以为约3%至 Thus, based on the total composition, the amount of the amine compound contained in the composition may range from about 3% to

20%重量比。 20% by weight.

[0048] 当组合物还包含羟胺化合物时,可以提高聚合物的除去效率。 [0048] When the composition further comprises a hydroxylamine compound, polymer removal efficiency can be improved. 然而,当羟胺的量少于约重量比时,除去效率可以变得微不足道,并且当羟胺的量超过约3%重量比时,可以加速金属的腐蚀。 However, when the hydroxylamine is less than about weight, removal efficiency may become insignificant, and when the amount of hydroxylamine is more than about 3 weight percent, may accelerate the corrosion of metals. 因此,基于组合物的总量,包含在组合物中的羟胺化合物的量可以为约 Thus, based on the total composition, the amount of hydroxylamine compound is contained in the composition may range from about

至3%重量比。 To 3% by weight.

[0049] 根据示例性实施方案,组合物可以包含抗腐蚀剂。 [0049] According to an exemplary embodiment, the composition may comprise an anti-corrosion agent. 在除去光致抗蚀剂的过程中,抗腐蚀剂可以防止包括下层金属布线的图案的腐蚀。 In the process of removing the photoresist, the anti-corrosion agent may include preventing corrosion of metal wiring pattern of the lower layer. 抗腐蚀剂可以包括抗坏血酸、儿茶酚、苯三酚、氢醌和间苯二酚。 Anti-corrosion agent may include ascorbic acid, catechol, pyrogallol, hydroquinone and resorcinol. 这些化合物可以单独或组合使用。 These compounds may be used alone or in combination. [0050] 当组合物包含少于约0. 重量比的抗腐蚀剂时,对金属布线的抗腐蚀效果可以减弱。 [0050] When the composition contains less than about 0.5 weight ratio of anti-corrosion agent, an anti-corrosion of the metal wiring effect can be reduced. 当抗腐蚀剂超过约10%重量比时,可以干扰聚合物和光致抗蚀剂残留物的除去。 When the anti-corrosive than about 10% by weight, it may interfere with the polymer and removing the photoresist residue. 因此,基于组合物的总量,包含在组合物中的抗腐蚀剂的量可以为约0. 至10%重量比。 Thus, based on the total composition, the amount of corrosion inhibitor included in the composition may be in the ratio of about 0.5 to 10% by weight.

[0051] 抗腐蚀剂还可以包括基于吡咯的化合物。 [0051] The anti-corrosion agent may further include a pyrrole-based compounds. 基于吡咯的化合物可以包括苯并三唑、 咪唑和氨基四唑等。 Pyrrole-based compounds may include benzotriazole, imidazole and amino tetrazole and the like. 这些化合物可以单独或组合使用。 These compounds may be used alone or in combination.

[0052] 基于组合物的总量,组合物可以包含约0. 至0. 5%重量比的基于吡咯的化合物。 [0052] based on the total composition, the composition may comprise from about 0.5 to 0.5% by weight based on the ratio of the pyrrole compound. 当基于吡咯的化合物的量少于约0. 重量比时,抗腐蚀效果可以变得微不足道,并且当基于吡咯的化合物的量超过约0. 5%重量比时,可以降低聚合物的除去效率。 When the pyrrole-based compound is less than about 0.5 by weight ratio, corrosion resistance effect can be made negligible, and when the pyrrole compound based on an amount of more than about 0.5% by weight, may reduce the efficiency of removal of the polymer. 因此,基于组合物的总量,包含在组合物中的基于吡咯的化合物的量可以为约0. 至0.5%重量比。 Thus, based on the total composition, the composition comprising the pyrrole compound based on the amount may range from about 0.5 to more than 0.5% by weight. 这些化合物可以单独或组合使用。 These compounds may be used alone or in combination.

[0053] 根据本发明的示例性实施方案,可以将去离子水用作溶剂。 [0053] According to an exemplary embodiment of the present invention, deionized water may be used as the solvent. 去离子水可以溶解包含在用于除去光致抗蚀剂的组合物中的组分。 Deionized water may be dissolved included in the composition of the photoresist for removing the components. 用于除去光致抗蚀剂的组合物的粘度和物理性质可根据去离子水的量而变化。 For viscosity and physical properties of the photoresist composition may vary according to the amount of deionized water is removed. 因此,考虑到光致抗蚀剂的除去效率、组合物的粘度和物理性质等,可以适当控制去离子水的量。 Thus, taking into account the efficiency of the photoresist is removed, the viscosity of the composition and physical properties and the like, can be appropriately controlled amount of deionized water.

[0054] 用于除去光致抗蚀剂的组合物可以除去用作蚀刻掩模的光致抗蚀剂图案,所述刻蚀掩模用于在进行制备包括DRAM、SRAM、闪存设备等的半导体装置的方法的过程中形成薄膜图案。 [0054] for removing photoresist compositions may remove the photoresist pattern as an etch mask, the etch mask is used during the preparation of a semiconductor comprising a DRAM, SRAM, flash memory devices, etc. process means the method of forming a thin film pattern. 在形成膜图案后,组合物可以有效并完全地除去光致抗蚀剂图案而不损坏金属布线、精密图案等。 After forming the film pattern, the composition can be effectively and completely remove photoresist without damaging the metal wiring pattern, like the pattern precision.

[0055] 利用光致抗蚀剂图案完成蚀刻方法后,包括有机材料、导电聚合物和可氧化的聚合物的蚀刻残留物可以留在包含薄膜图案的衬底的表面部分。 After [0055] using a photoresist pattern to complete the etching method, etching residues including organic polymeric material, a conductive polymer and oxidizable can remain on the surface portion of the substrate comprises a thin film pattern. 利用本发明的用于除去光致抗蚀剂的组合物可以干净地除去蚀刻残留物。 Used in the present invention using the composition for removing a photoresist can be removed cleanly etch residues. 特别地,当金属布线包含钛(Ti)时,可以有效地除去由钛产生的金属蚀刻残留物。 In particular, when the metal wire comprises titanium (Ti), can effectively remove metal etch residues generated by titanium. 此外,当使用常规使用的用于除去光致抗蚀剂的组合物时,难以除去可氧化的聚合物。 Further, when the composition for removing a photoresist, it is difficult to remove using conventional oxidizable polymer used. 然而,本发明的示例性实施方案的组合物可以容易除去可氧化的聚合物。 However, the composition according to exemplary embodiments of the present invention can be easily removed oxidizable polymer.

[0056] 根据示例性实施方案,在实施制造半导体装置的半导体图案的方法的过程中,利用光致抗蚀剂层作为蚀刻掩模形成膜图案之后,可以使用用于除去光致抗蚀剂的组合物来除去光致抗蚀剂层。 [0056] According to an exemplary embodiment, in the implementation method of manufacturing a semiconductor device pattern of a semiconductor, after which a photoresist layer as an etching mask film pattern is formed, it may be used to remove the photoresist The composition of the photoresist layer is removed.

[0057] 在下文中,将详细描述本发明的优选实施方案。 [0057] Hereinafter, preferred embodiments of the present invention will be described in detail.

[0058] 用于除去光致抗蚀剂的组合物的制备 [0058] for the preparation of a photoresist composition is removed

[0059] 实施例1 [0059] Example 1

[0060] 基于组合物的总量,将作为胺氧化物的5%重量比的N-甲基吗啉N-氧化物(NMMO)、作为醚化合物的40%重量比的二甘醇一甲醚(MDG)、作为胺化合物的20%重量比的单乙醇胺(MEA)、作为抗腐蚀剂的8%重量比的儿茶酚(CAT)和27%重量比的去离子水混合来制备用于除去光致抗蚀剂的组合物。 [0060] based on the total composition, 5% by weight as the ratio of the amine oxide N- methylmorpholine N- oxide (NMMO), as a 40% by weight of diethylene glycol ether compound is an ether (the MDG), monoethanolamine (MEA) 20% by weight as the ratio of the amine compound, catechol (CAT) 8% by weight as the ratio of the anti-corrosion agent, and deionized water in a weight ratio of 27% was prepared by mixing for removing light composition a resist.

[0061] 实施例2至11 [0061] Example 2-11

[0062] 除了如表1所示改变所加入的组分和量外,通过进行与实施例1所述基本相同的步骤来制备用于除去光致抗蚀剂的组合物。 [0062] In addition to the changed as shown in Table 1 and the amount of added components, for removing prepared by substantially the same procedure as described in Example 1 the composition of the photoresist.

[0063] 实施例12至14 [0063] Example 12 to 14

[0064] 除了如表1所示改变所加入的组分和量并另外加入2%重量比的羟胺化合物外,通过进行与实施例1所述基本相同的步骤来制备用于除去光致抗蚀剂的组合物。 [0064] In addition, such components and amounts were changed as shown in Table 1 was added and further 2% by weight of a hydroxylamine compound ratios, but by substantially the same procedure described in Example 1 was prepared for removing photoresist agent composition.

[0065] 实施例15至19 [0065] Example 15 to 19

[0066] 除了如表1所示改变所加入的组分和量外,通过进行与实施例1所述基本相同的步骤来制备用于除去光致抗蚀剂的组合物。 [0066] In addition to the changed as shown in Table 1 and the amount of added components, for removing prepared by substantially the same procedure as described in Example 1 the composition of the photoresist.

[0067] [0067]

Figure CN102289159AD00081

[0069] 比较实施例1至10 [0069] Comparative Example 1-10

[0070] 除了如表2所示改变所加入的组分和量外,通过进行与实施例1所述基本相同的步骤来制备用于除去光致抗蚀剂的组合物。 [0070] In addition to the changed as shown in Table 2, the added components and amounts, by substantially the same procedure described in Example 1 to prepare a composition for removing a photoresist.

[0071] 对于制备用于除去光致抗蚀剂的组合物,利用N-甲基吗啉-N-氧化物作为胺氧化物、二甘醇一甲醚作为醚化合物、单乙醇胺作为胺化合物、儿茶酚或苯并三唑作为抗腐蚀齐U。 [0071] For preparing composition for removing a photoresist, and using N- methylmorpholine oxide is used as amine oxides -N-, diethylene glycol monomethyl ether as the ether compound, monoethanolamine as an amine compound, catechol or benzotriazole as corrosion homogeneous U. 选择性地加入羟胺作为羟胺化合物。 Optionally hydroxylamine compound as hydroxylamine. 选择性地,用极性溶剂N-甲基吡咯烷酮或二甲基乙酰胺来代替醚化合物。 Alternatively, with a polar solvent is N- methylpyrrolidone or dimethylacetamide instead of an ether compound. 将剩余量的去离子水混合来制备用于除去光致抗蚀剂的组合物。 The remaining amount of deionized water were mixed to a photoresist composition for preparing removed. 制备用于除去光致抗蚀剂的组合物所使用的每种组分和量显示在表2中。 Preparation and amounts of each component for removing the photoresist compositions used are shown in Table 2.

[0072]表 2 [0072] TABLE 2

[0073] [0073]

Figure CN102289159AD00091

[0074] 在表1和2中,MEA表示单乙醇胺,HA表示羟胺,EAE表示乙氨基乙醇,DEHA表示二乙基羟胺,NMMO表示N-甲基吗啉-N-氧化物,MDG表示二甘醇一甲醚,EDG表示二甘醇二乙醚,D⑶E表示二甘醇二甲醚,BDG表示二甘醇一丁基醚,NMP表示N-甲基吡咯烷酮,DMAC 表示二甲基乙酰胺,VC表示抗坏血酸,CAT表示儿茶酚,BT表示苯并三唑,HQ表示氢醌以及RC表示间苯二酚。 [0074] In Tables 1 and 2, MEA represents monoethanolamine, HA represents hydroxylamine, EAE represents ethylamino ethanol, DEHA represents diethylhydroxylamine, NMMO represents -N- N- methylmorpholine oxide, MDG represents diglycol a ether alcohol, EDG represents diethylene glycol diethyl ether, D⑶E represents diglyme, BDG represents diethylene glycol monobutyl ether, NMP represents N- methylpyrrolidinone, DMAC represents dimethylacetamide, VC represents ascorbic acid, CAT expressed catechol, BT represents benzotriazole, HQ represents hydroquinone and resorcinol represented RC.

[0075] ffl干除去光致杭神Jll的会目^ ^除去效率i平价 [0075] ffl dry Zhihang God Jll removed light will mesh ^ i ^ parity removal efficiency

[0076] 评价通过实施例1至19和比较实施例1至10制备的每种用于除去光致抗蚀剂的组合物的除去效率。 [0076] Evaluation of Examples and each of Comparative Example 110 was prepared to a removal efficiency of Examples 1 to 19 to remove the photoresist composition is.

[0077] 为了评价用于除去光致抗蚀剂的组合物的性能,进行关于晶片的干燥蚀刻方法, 所述方法包括暴露诸如铝、钨和钛的金属、氧化物化合物和氮化物化合物的至少一种。 [0077] In order to evaluate the performance of the composition for removing a photoresist, etching at least on drying, the method comprising exposing a wafer such as aluminum, titanium and tungsten, the compound oxide and nitride compound one kind. 在该实验中,在进行蚀刻方法后形成铝图案。 In this experiment, after the etching method of forming an aluminum pattern. 然后,于60°C下,将包含蚀刻方法后留下的聚合物和光致抗蚀剂的测试样品浸渍在每种用于除去光致抗蚀剂的组合物中10分钟。 Then, at 60 ° C, the composition comprising a photoresist remaining after 10 minutes in the etching process and polymer test sample was immersed in a photoresist for removing each. 随后将试验样品用异丙醇(IPA)淋洗3分钟,然后用去离子水淋洗3分钟。 The test samples were rinsed for 3 minutes followed by isopropanol (IPA), and then rinsed with deionized water for 3 minutes. 将试验样品用氮气干燥并通过SEM测量进行检查以评价聚合物和光致抗蚀剂的除去效率以及金属的腐蚀程度。 The test samples were dried with nitrogen and inspected measured by SEM to evaluate the efficiency of the polymer and the degree of corrosion of the metal and the photoresist is removed.

[0078] 通过上述实施例和比较实施例制备的每种用于除去光致抗蚀剂的组合物的评价结果显示在表3中。 [0078] The above embodiment and Comparative Example were prepared for each embodiment of the evaluation results for removing photoresist compositions are shown in Table 3.

[0079]彪[0080] [0079] Biao [0080]

Figure CN102289159AD00101

[0081] 在表3中,ra表示ra测试的聚合物除去效率,◎表示优异并意味着几乎除去了所有的聚合物,〇表示良好并意味着留下少量的聚合物,Δ表示一般并意味着留下大量的聚合物,而X表示不好并意味着几乎所有的聚合物没有被除去而留下。 [0081] In Table. 3, ra ra represents a polymer removal efficiency test, showing excellent ◎ and means to remove almost all of the polymer and mean square indicates good leaving small amount of polymer, and [Delta] represents a general means leaving a large number of the polymer, and X represents poor and means that almost all of the polymer is not leaving removed.

[0082] MA表示MA测试的金属腐蚀防止程度,◎表示优异并意味着没有观察到金属腐蚀, 〇表示良好并意味着观察到少量金属腐蚀,Δ表示一般并意味着观察到部分图案上的大量金属腐蚀,而X表示不好并意味着没有获得金属腐蚀防止效果。 [0082] Test MA MA represents a metal corrosion preventing degree, and excellent ◎ represents means that no metal corrosion was observed, and good mean square represents a small amount of metal corrosion was observed, [Delta] represents a general means and the observed pattern bulk portion metal corrosion, and X represents poor and did not mean to get the effect of preventing metal corrosion.

[0083] OA表示OA试验的氧化物层损坏防止程度,◎表示优异并意味着没有观察到氧化物层的损坏,〇表示良好并意味着观察到氧化物层上微小程度的损坏,Δ表示一般并意味着观察到部分图案上氧化物层相当程度的损坏,而X表示不好并意味着观察到氧化物层的损坏。 [0083] Test OA OA represents an oxide layer preventing damage degree, showing excellent ◎ means that no damage was observed and the oxide layer, and the mean square indicates good slight degree of damage was observed on the oxide layer, [Delta] represents a general and means was observed to a considerable extent on a portion of oxide layer pattern collapse, and X represents a good means and damage was observed in the oxide layer.

[0084] MT表示半导体加工中的金属布线形成方法,并且在进行该方法之后可以暴露铝、 氮化物、氧化物等。 [0084] MT represents a metal wiring in semiconductor processing method of forming, and may be exposed aluminum, nitrides, oxides, and the like after performing the method. CT表示半导体加工中金属布线之间的绝缘层的薄膜形成方法,并且在进行蚀刻方法后可以暴露氧化物。 CT represents a thin film formed of an insulating layer between metal wires in semiconductor processing, and may be exposed after the oxide etch process is performed. 进行每个MT和CT之后,从晶片取得测试样品,所述测试样品包含干燥蚀刻方法中留下的光致抗蚀剂残留物和产生的聚合物。 After each MT and CT, from wafer to obtain a test sample, the test sample comprises a polymer photoresist and the resulting residue left in the drying etching method.

[0085] 参见表3,实施例1至19的用于除去光致抗蚀剂的组合物表现出优异或良好的聚合物除去效率、金属腐蚀防止性质和氧化物层损坏防止性质。 [0085] Table 3, Examples 1 to 19, for removing photoresist compositions exhibit excellent or good polymer removal efficiency, a metal corrosion preventing properties and properties preventing damage to the oxide layer.

[0086] 图1显示在应用根据实施例1制备的用于除去光致抗蚀剂的组合物之后,利用场发射扫描电子显微镜在包含金属图案的晶片上拍摄的照片。 [0086] Figure 1 shows the application according to the following composition for removing a photoresist prepared in Example 1, using field emission scanning electron microscope photograph taken on the wafer comprising a metal pattern.

[0087] 参见图1,除去了几乎所有的聚合物,并且下层金属层的腐蚀防止效果良好。 [0087] Referring to Figure 1, to remove almost all of the polymer, and preventing corrosion of the underlying metal layer is good results. 此外, 在晶片上形成的金属图案上没有观察到损坏。 Further, no damage was observed on the metal pattern formed on the wafer.

[0088] 图2显示在应用根据实施例1制备的用于除去光致抗蚀剂的组合物之后,晶片上形成的金属接触上的照片。 [0088] Figure 2 shows the application of metal contacts on the picture after the photoresist composition is formed on a wafer prepared according to Example 1 of the embodiment for removing.

[0089] 参见图2,除去了接触孔和晶片上几乎所有的聚合物。 [0089] Referring to Figure 2, almost all of the polymer to remove the wafer and the contact hole.

[0090] 当将儿茶酚(CAT)和苯并三唑(BT)混合并用作抗腐蚀剂时,甚至利用如实施例4 至9所示的少量抗腐蚀剂就提高了光致抗蚀剂的除去效率。 [0090] When catechol (CAT), and benzotriazole (BT) were mixed and used as an anti-corrosive, even using a small amount of anti-corrosion agent as shown in Example 4-9 to enhance removal of photoresist effectiveness. 当加入羟胺化合物时,如实施例12至14所示,改进了聚合物的除去程度。 When the hydroxylamine compound is added, as shown in Examples 12 to 14, to improve the degree of removal of the polymer. 对于醚化合物,当考虑金属腐蚀时,二甘醇一甲醚(MDG)表现出最合适的结果。 The ether compound, when considering metal corrosion, diethylene glycol monomethyl ether (MDG) exhibit the most suitable results.

[0091] 将示例性实施方案的用于除去光致抗蚀剂的组合物的除去效率与比较实施例1 至10的用于除去光致抗蚀剂的组合物进行比较,获得如下结果。 [0091] The exemplary embodiments of removal efficiency for removing the photoresist composition in Comparative Example 1 to 10 for the removal of photoresist compositions are compared to obtain the following results.

[0092] 根据比较实施例1制备的组合物利用CAT与BT的混合物作为抗腐蚀剂。 [0092] The composition of Comparative Example 1 was prepared using a mixture of CAT and BT as an anti-corrosive agent. 在这种情况下,使用过量的约2%重量比的基于吡咯的化合物BT。 In this case, use of pyrrole-based compounds BT excess of about 2% by weight. 从结果可以确定,当BT的量超过约0. 5%重量比时,聚合物的除去效率可以变差。 Can be determined from the results, when the amount of BT exceeds about 0.5% by weight, the removal efficiency of the polymer may be deteriorated.

[0093] 图3和4显示在应用根据比较实施例2和3制备的每种用于除去光致抗蚀剂的组合物之后,利用场发射扫描电子显微镜在包含金属图案的晶片上拍摄的照片。 After [0093] FIGS. 3 and 4 show two of each composition for removing photoresist and prepared in Comparative Example 3 according to the application, using a field emission scanning electron microscope photograph taken on the wafer comprising a metal pattern .

[0094] 参见图3和4,不包含抗腐蚀剂或仅包含BT作为抗腐蚀剂的组合物表现出低聚合物除去效率,因此在进行除去方法之后观察到留在金属上部和侧壁部的聚合物。 [0094] Referring to FIGS. 3 and 4, the left side wall and the upper portion of the metal does not comprise an anti-corrosion agent or a polymer containing only BT as corrosion inhibitor composition exhibits a low efficiency of removal of the polymer, thus carrying out the method was observed after removal of . 另外,腐蚀防止效果不足,并且损坏了金属图案侧壁的铝部分。 Further, the corrosion preventing effect is insufficient, and the damaged portion of the metal aluminum pattern sidewall.

[0095] 图5显示在应用根据比较实施例2制备的用于除去光致抗蚀剂的组合物之后,晶片上形成的金属接触上的照片。 After [0095] Figure 5 shows the composition for removing a photoresist prepared in Comparative Example 2 in accordance with the application, photo metal contact formed on the wafer.

[0096] 参见图5,由于常规剥离组合物对聚合物的低除去效率,因此由氧化物层产生的聚合物留在衬底上。 [0096] Referring to FIG 5, because the low efficiency of conventional stripping compositions remove polymer so that the polymer produced by the oxide layer left on the substrate.

[0097] 比较实施例4和5的组合物包含NMP、DMAC等来代替用于溶解膨胀的聚合物和与衬底分离的光致抗蚀剂的醚化合物。 [0097] Comparative Example 4 and 5 compositions comprising NMP, DMAC or the like instead of the ether compound for dissolving the swollen polymer substrate and separating the photoresist. 认为由于组合物的聚合物除去效率不足而获得这样的结果。 Since the polymer composition that is obtained by removing such inefficiencies result.

[0098] 根据比较实施例6的组合物,当组合物包含约3%重量比或更少的胺氧化物时,聚合物的除去时间增加了。 [0098] The composition of Comparative Example 6, when the composition comprises from about 3% by weight or less of amine oxides, removing time of the polymer increases. 除去时间大于约10分钟的参考处理时间。 Removing about 10 minutes longer than the reference processing time.

[0099] 根据比较实施例7的组合物,另外包含的用于改进聚合物除去效率的羟胺化合物的量超过约3%重量比。 [0099] The composition of Comparative Example 7, for improving the polymer further comprises an amount of hydroxylamine compound removal efficiency of more than about 3% by weight. 认为加速了金属的腐蚀。 He believes accelerated the corrosion of the metal.

[0100] 根据比较实施例8至10的组合物,胺化合物MEA的量过少或过多并且偏离了优选的给定量。 [0100] The comparative compositions of Examples 8 to 10, the amount of the amine compound is too small or too MEA and preferably deviates from a given amount. 观察到聚合物的除去效率或腐蚀防止程度变差了。 Removal efficiency was observed the polymer or the degree of deterioration of corrosion prevention. 当MEA的量少于约3%重量比时,聚合物的除去效率变差,而当MEA的量超过约20%重量比时,可能损坏包含金属的靶材料。 When the amount ratio of the MEA to about 3% by weight, the removal efficiency of the polymer is deteriorated, and when the amount of the MEA than about 20% by weight, may damage the target material comprises a metal.

[0101] 根据用于除去光致抗蚀剂的组合物的示例性实施方案,可以除去用作蚀刻掩模的光致抗蚀剂图案而不损坏金属布线和精密图案,所述蚀刻掩模在半导体制造方法中用于形成DRAM、SRAM、闪存设备等。 [0101] According to an exemplary embodiment of the composition for removing a photoresist can be removed photoresist pattern as an etching mask without damaging the metal wiring pattern and precision of the etch mask a method for forming a semiconductor manufacturing DRAM, SRAM, flash memory devices and the like. 此外,可以有效地除去蚀刻残留物,该蚀刻残留物包括有机材料、导电聚合物、可氧化的聚合物等,并留在利用光致抗蚀剂作为掩模进行蚀刻方法后形成的图案表面上。 Further, it is possible to effectively remove the etching residue, the etch residue comprises an organic material, a conductive polymer, an oxidizable polymer or the like, and left on the pattern surface is formed using the photoresist as a mask etching method .

[0102] 前述内容说明了示例性实施方案而不被解释成对其的限制。 [0102] The foregoing embodiment illustrates an exemplary embodiment not be construed as limiting thereof. 尽管描述了几个示例性实施方案,但本领域的技术人员会容易地理解示例性实施方案的许多变化是可能的,而实质上没有背离示例性实施方案的新的教导和优势。 Although a few exemplary embodiments, those skilled in the art will readily appreciate that many variations of the exemplary embodiments are possible, substantially without departing from the novel teachings and advantages of the exemplary embodiment. 因此,旨在将所有这样的变化包含在如权利要求所定义的示例性实施方案的范围内。 It is therefore intended that all such variations be included within the scope of the exemplary embodiments as defined by the claims.

Claims (12)

  1. 1.用于除去光致抗蚀剂的组合物,基于所述组合物的总量,所述组合物包含: 约3%至8%重量比的胺氧化物;约40%至60%重量比的醚化合物; 约3%至20%重量比的胺化合物; 约0. 至10%重量比的抗腐蚀剂;以及剩余量的去离子水。 1. The composition for removing a photoresist, and the total amount of the composition, based on the composition comprising: from about 3-8% by weight of the amine oxide ratio; about 40 to 60% by weight ether compounds; from about 3-20% by weight of an amine compound; anticorrosive from about 0.5 to 10% by weight; and the remaining amount of deionized water.
  2. 2.如权利要求1所述的组合物,其中所述胺氧化物包括选自2,6-二甲基吡啶-N-氧化物、吡啶-N-氧化物和N-甲基吗啉-N-氧化物中的至少一种。 2. The composition according to claim 1, wherein said amine oxide selected from the group comprising 2,6-lutidine -N--oxide, pyridine -N--oxide and N- methylmorpholine -N - at least one oxide.
  3. 3.如权利要求1所述的组合物,其中所述醚化合物包括选自二甘醇一甲醚、二甘醇二甲醚、二甘醇一乙醚、二甘醇二乙醚和二甘醇一丁基醚中的至少一种。 3. The composition according to claim 1, wherein said ether comprises a compound selected from diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether and diethylene glycol at least one butyl ether.
  4. 4.如权利要求1所述的组合物,其中所述胺化合物包括选自单乙醇胺、二乙醇胺、三乙醇胺、甘氨酸、二甘醇胺和单异丙醇胺中的至少一种。 4. The composition according to claim 1, wherein said amine compound is selected from the group comprising monoethanolamine, diethanolamine, triethanolamine, at least one of glycine, diglycolamine and the monoisopropanolamine.
  5. 5.如权利要求4所述的组合物,基于所述组合物的总量,所述组合物还包含约至3%重量比的羟胺化合物。 5. The composition as claimed in claim 4, wherein, based on the total amount of the composition, the composition further comprises from about 3% to weight ratio of the hydroxylamine compound.
  6. 6.如权利要求5所述的组合物,其中所述羟胺化合物包括选自羟胺、二乙基羟胺和乙氨基乙醇中的至少一种。 6. The composition as claimed in claim 5, wherein said hydroxylamine compound comprises a selected hydroxylamine, diethylhydroxylamine and at least one-ethylamino ethanol.
  7. 7.如权利要求1所述的组合物,其中所述抗腐蚀剂包括选自抗坏血酸、儿茶酚、苯三酚、氢醌和间苯二酚中的至少一种。 7. The composition according to claim 1, wherein said anti-corrosion agent comprises a selected ascorbic acid, catechol, at least one phloroglucinol, hydroquinone and resorcinol in.
  8. 8.如权利要求7所述的组合物,基于所述组合物的总量,所述组合物还包含约0. 至0.5%重量比的吡咯化合物。 8. The composition according to claim 7, based on the total amount of the composition, the composition further comprises from about 0.05 pyrrole compound to 0.5% by weight.
  9. 9.如权利要求8所述的组合物,其中所述吡咯化合物包括选自苯并三唑、咪唑和氨基四唑中的至少一种。 9. The composition according to claim 8, wherein the azole comprises at least one compound selected from benzotriazole, imidazole and amino tetrazole.
  10. 10.形成半导体图案的方法,包括: 在衬底上的薄膜上形成光致抗蚀剂图案,通过利用光致抗蚀剂图案作为掩模图案来蚀刻所述薄膜以形成薄膜图案,以及利用用于除去光致抗蚀剂的组合物来除去所述光致抗蚀剂图案,所述用于除去光致抗蚀剂的组合物包含胺氧化物、醚化合物、胺化合物、抗腐蚀剂和去离子水。 10. A method of forming a semiconductor pattern, comprising: forming a photoresist pattern by using the photoresist pattern as a mask pattern is etched to form the thin film pattern, and the use of a thin film on a substrate in a to the photoresist pattern is removed photoresist composition is removed, the composition for removing a photoresist composition comprising an amine oxide, ether compounds, amine compounds, anti-corrosion agents and deionized water.
  11. 11.如权利要求10所述的方法,其中基于所述组合物的总量,所述用于除去光致抗蚀剂的组合物包含:约3%至8%重量比的胺氧化物; 约40%至60%重量比的醚化合物; 约3%至20%重量比的胺化合物; 约0. 至10%重量比的抗腐蚀剂;以及剩余量的去离子水。 11. The method according to claim 10, wherein based on the total amount of the composition, the composition for removing photoresist comprising: from about 3-8% by weight of the amine oxide ratio; about 40 to 60% by weight ratio of the ether compound; from about 3% to 20% by weight ratio of amine compound; from about 0.5 to 10% by weight of the anticorrosive ratio; and a remaining amount of deionized water.
  12. 12.如权利要求10所述的方法,其中所述薄膜为金属氧化物薄膜和氮化物薄膜中的至少一种。 12. The method of claim 10 wherein said film is a metal oxide thin film and a nitride film of at least one claim.
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CN1875325A (en) * 2003-10-29 2006-12-06 马林克罗特贝克公司 Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
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