CN102289159A - Composition for removing photoresist and method for forming semiconductor pattern by using the same - Google Patents
Composition for removing photoresist and method for forming semiconductor pattern by using the same Download PDFInfo
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- CN102289159A CN102289159A CN 201010207338 CN201010207338A CN102289159A CN 102289159 A CN102289159 A CN 102289159A CN 201010207338 CN201010207338 CN 201010207338 CN 201010207338 A CN201010207338 A CN 201010207338A CN 102289159 A CN102289159 A CN 102289159A
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Abstract
The invention discloses a composition for removing a photoresist and a method for forming a semiconductor pattern by using the same. Based on the total weight of the composition, the composition comprises about 3 wt% to 8 wt% of amine oxide, about 40 wt% to 60 wt% of ether compound, about 3 wt% to 20 wt% of amine compound, about 0.1 wt% to 10 wt% of corrosion inhibitor and the balance of deionized water. The damage to a layer under the photoresist can be reduced; and moreover, the photoresist, metal etching residues and etching residues which can be oxidized can be effectively reduced.
Description
Background of invention
1. field
Exemplary relates to and is used to remove the composition of photoresist and utilizes it to form the method for semiconductor pattern.More specifically, exemplary relates to the composition that is used to remove photoresist that is used for removing effectively metal etch residue and oxidable etch residues, and utilizes it to form the method for semiconductor pattern.
2. association area is described
Semiconductor device requires to have highly integrated structure.For the response of this requirement, developed the integrated level that semiconductor device reduces design rule and increases wiring.Especially, the method for formation photoresist layer becomes the important method that determines the semiconductor device productive rate in forming the precision circuit process.The susceptibility of photoresist layer, the contrast after developing, resolution, to the cohesive of substrate, residual layer character etc. directly influence carry out the quality that engraving method is removed formed precision circuit after the photoresist layer subsequently.Usually, as follows by the application process of the photolithographic formation pattern that utilizes photo-corrosion-resisting agent composition.
At first, can on the substrate that comprises the insulation course that will form pattern or conductive layer, form organic layer, i.e. the photoresist layer.The dissolubility of photoresist layer in alkaline solution can change after being exposed to UV or X-ray.Can on the photoresist layer, place to have and be used for the mask (mask) of pattern that selectivity exposes the expectation part of this photoresist layer, can make photoresist layer-selective ground be exposed to UV or X-ray by this mask then.After being exposed to, can carry out developing method and in alkaline solution, have higher deliquescent part to remove (expose portion of eurymeric (positive-type) photo-corrosion-resisting agent composition), keep the part have than low-solubility simultaneously to form the photoresist pattern.The expose portion of insulation course or conductive layer can be carried out etching by the photoresist pattern that forms thus.Finish after the engraving method, the photoresist pattern that can remove reservation is to obtain to form required insulating pattern or conductive patterns such as various wirings, electrode.
Various types of photo-corrosion-resisting agent compositions are disclosed.At United States Patent (USP) 3,046, No. 118,4,115, No. 128 and 4,173, among the open sho 62-28457 of No. 470 and Japanese Patent Laid photo-corrosion-resisting agent composition is disclosed, the photochromics that it comprises cresols-formaldehyde phenolic resin varnish and is replaced by naphthoquinones two nitrine functional groups.At United States Patent (USP) 5,648, photo-corrosion-resisting agent composition is disclosed in No. 194, it comprises alkali soluble resins, adjacent naphthalene quinone di-azide sulfonic acid ester and vinyl ether compound.United States Patent (USP) 5,468 discloses photo-corrosion-resisting agent composition No. 590, and it comprises by utilizing the alkali soluble resins and the polyphenol of quinone di-azido compound preparation; United States Patent (USP) 5,413 discloses photo-corrosion-resisting agent composition No. 895, and it comprises novolac resin, quinone di-azido compound and polyphenol and has improved character.
In photoetching process, finish forming pattern method (patterning process) afterwards, can utilize (stripping) composition of peeling off that comprises organic solvent, acidity or neutral solution, organic acid etc. to remove the photoresist pattern.Because it is highly integrated that semiconductor device requires, so the thickness of metal line reduces gradually and produces the polymkeric substance that is difficult to remove.Therefore, the stripping composition that utilizes routine to use comes effectively and removes the photoresist residue up hill and dale to become difficult more gradually.
The photoresist residue can comprise the photoresist that carries out staying behind the engraving method on the substrate, stay polymkeric substance on wiring or via (via hole) sidewall, stay organometallic polymer on sidewalls and the bottom or metal oxide etc.
Summary of the invention
Exemplary provides the composition that is used to remove photoresist, said composition is removed the etch residues of staying on the substrate effectively, particularly metal etch residue and oxidable etch residues and photoresist reduce the damage to metal level, oxide skin(coating) etc. simultaneously.
Exemplary provides by utilizing the above-mentioned composition that is used to remove photoresist to form the method for the semiconductor pattern with good quality.
According to exemplary, based on the total amount of composition, the composition that is used to remove photoresist comprises the corrosion inhibitor of the amines of the ether compound of the amine oxide of about 3% to 8% weight ratio, about 40% to 60% weight ratio, about 3% to 20% weight ratio, about 0.1% to 10% weight ratio and the deionized water of surplus.
In exemplary, amine oxide can comprise and be selected from 2, at least a in 6-lutidines-N-oxide, pyridine-N-oxides and the N-methylmorpholine N-oxide.
In exemplary, ether compound can comprise and is selected from least a in diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, carbitol, diethyl carbitol and the diethylene glycol-butyl ether.
In exemplary, amines can comprise and is selected from least a in monoethanolamine, diethanolamine, triethanolamine, glycocoll, diglycolamine and the monoisopropanolamine.
In exemplary, based on the total amount of composition, composition can also comprise the hydroxylamine compound of about 1% to 3% weight ratio.Hydroxylamine compound can comprise and is selected from least a in azanol, diethyl hydroxylamine and the ethylaminoethanol.
In exemplary, corrosion inhibitor can comprise and is selected from least a in ascorbic acid, catechol, benzenetriol, quinhydrones and the resorcinol.
In exemplary, based on the total amount of composition, composition can also comprise the azole compounds of about 0.1% to 0.5% weight ratio.Azole compounds can comprise and is selected from least a in benzotriazole, imidazoles and the Aminotetrazole.
According to exemplary, the method that forms semiconductor pattern may further comprise the steps: form the photoresist pattern on the film on the substrate, by utilizing the photoresist pattern to come this film of etching to form Thinfilm pattern as mask, and the composition that is used to remove photoresist removes the photoresist pattern, and said composition comprises amine oxide, ether compound, amines, corrosion inhibitor and deionized water.
In exemplary, based on the total amount of composition, the composition that is used to remove photoresist comprises the corrosion inhibitor of the amines of the ether compound of the amine oxide of about 3% to 8% weight ratio, about 40% to 60% weight ratio, about 3% to 20% weight ratio, about 0.1% to 10% weight ratio and the deionized water of surplus.
In exemplary, film can be at least a in metal-oxide film and the nitride film.
Exemplary according to the composition that is used to remove photoresist, can reduce damage, improve the efficient of removing simultaneously such as the etch residues of metal etch residue and oxidable etch residues and photoresist to metal level, oxide skin(coating) etc.
The accompanying drawing summary
To more be expressly understood exemplary from following detailed description in conjunction with the accompanying drawings.Fig. 1 to 5 represents non-restrictive illustrative embodiment as herein described.
Fig. 1 be presented at application according to embodiment 1 preparation be used to remove after the composition of photoresist, utilize field emission scanning electron microscope at the photo that comprises the wafer of metal pattern (wafer) photographs.
Fig. 2 is presented at application and is used to remove after the composition of photoresist the photo on the Metal Contact of wafer (contact) according to embodiment 1 preparation.
Fig. 3 and 4 be presented at application according to comparing embodiment 2 and 3 preparations be used to remove after the composition of photoresist, utilize the photo of field emission scanning electron microscope in the wafer photographs that comprises metal pattern.
Fig. 5 is presented at application and is used to remove after the composition of photoresist the photo on the Metal Contact of wafer according to comparing embodiment 2 preparation.
Exemplary describes in detail
To more at large describe various exemplary hereinafter, wherein show some exemplary.Yet exemplary can show as many different forms and should not be construed as and be confined to exemplary cited herein.On the contrary, provide these exemplary, and fully pass on the scope of exemplary to those skilled in the art so that the disclosure is detailed and complete.
Be to be understood that, when element or layer mean another element or layer " on ", in " being connected to " or " being coupled to " another element or when layer,, this element or layer can be directly on another element or layers, another element or layer are connected directly to or are coupled to, intermediary element or layer perhaps can be had.On the contrary, when element or layer mean " directly " another element or layer " on ", " being connected directly to " or " coupling directly to " another element or when layer, then do not exist intermediary element or layer.Identical numeral refers to components identical all the time.Term used herein " and/or " comprise any and whole combination of one or more relevant Listed Items.
Can be used for describing various elements, component, zone, layer and/or part in this article although should be appreciated that the term first, second, third, etc., these elements, component, zone, layer and/or part should not be subjected to the restriction of these terms.These terms only are used for distinguishing an element, component, zone, layer or part and another zone, layer or part.Therefore, first element of following discussion, component, zone, layer or part can be called second element, component, zone, layer or partly not deviate from the instruction of exemplary.
This paper can the usage space relational language, as " being lower than ", " following ", " bottom ", " top ", " top " etc. to be easy to describe the relation of an element or feature and other element or feature.Should be appreciated that the space correlation term is intended to comprise the different azimuth of used or operated device.For example, if will install upset, be described as other element or feature " below " or the element of " being lower than " other element or feature then be positioned other element or feature " above ".Therefore, above exemplary term " following " can comprise and following two orientation.In addition, can and correspondingly describe device location (revolve turn 90 degrees or towards other orientation) with space used herein relative descriptors.
Term used herein is only to be used to describe concrete exemplary not to be intended to limit exemplary.Unless context offers some clarification on, singulative used herein " (a) ", " one (an) " and " this (the) " also are intended to comprise plural form.It should also be understood that, term " comprises (comprise) " and/or " comprising (comprising) ", where used in this disclosure, appointment exists characteristic specified, integer, step, operation, element and/or component, but does not get rid of existence or add one or more further features, integer, step, operation, element, component and/or its group.
Exemplary is the signal illustration of desirable exemplary (and intermediate structure).Thus, expect such as the variation of manufacturing technology and/or the caused illustration of deviation.Therefore, exemplary should not be understood as that the concrete form that is limited to zone shown in this paper, but comprises such as making caused form deviation.
Unless otherwise defined, all terms used herein (comprising technology and scientific terminology) are identical with the common implication of understanding of exemplary those skilled in the art.It should also be understood that, should be interpreted into such as the term of defined those terms in common dictionary and to have and the consistent implication of they implications in the context of association area, unless and this paper clearly defines, term not can with desirable or too the mode of form make an explanation.
Hereinafter will describe exemplary of the present invention in detail.
Be used to remove the composition of photoresist
According to exemplary, the composition that is used to remove photoresist can comprise the deionized water of amine oxide, ether compound, amines, corrosion inhibitor and surplus.Especially, based on the total amount of composition, said composition can comprise the corrosion inhibitor of the amines of the ether compound of the amine oxide of about 3% to 8% weight ratio, about 40% to 60% weight ratio, about 3% to 20% weight ratio, about 0.1% to 10% weight ratio and the deionized water of surplus.
According to exemplary, composition can comprise amine oxide.Amine oxide can improve the efficient of the polymkeric substance of removing in engraving method to be produced and not damage the membrane structure that forms on the substrate.Amine oxide can comprise 2,6-lutidines-N-oxide, pyridine-N-oxides and N-methylmorpholine-N-oxide etc.These compounds can be used alone or in combination.
When composition comprises the amine oxide that is less than about 3% weight ratio, can not fully remove polymkeric substance.When the amount of amine oxide surpasses about 8% weight ratio, the removing efficient further improvement can not be arranged of polymkeric substance, and can increase the viscosity of composition.Therefore, based on the total amount of composition, the amount that is included in the amine oxide in the composition can be with about 3% to 8% weight ratio.
According to exemplary, composition can comprise ether compound.Ether compound can dissolve expansion polymkeric substance and with the photoresist of substrate separation, and can work with the expansion of the polymkeric substance that promotes to remove.In addition, ether compound can prevent that the photoresist and the etch residues that separate are adsorbed to substrate surface again.Ether compound can comprise diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, carbitol, diethyl carbitol and diethylene glycol-butyl ether etc.These compounds can be used alone or in combination.
When composition comprises the ether compound that is less than about 40% weight ratio, photoresist and etch residues are dissolved in the composition fully, perhaps the photoresist of Fen Liing can be adsorbed on the substrate again.When the ether compound that comprises in the composition surpasses about 60% weight ratio, the removing efficient further enhancing can not be arranged of photoresist, and can not prevent the dilution of other component.Therefore, based on the total amount of composition, the amount that is included in the ether compound in the composition can be about 40% to 60% weight ratio.
According to exemplary, composition can comprise amines.The photoresist of removing can easily be expanded by amines or weaken.Amines can work polymkeric substance that is produced to remove in engraving method and the speed of removing of controlling this polymkeric substance.Amines can comprise monoethanolamine, diethanolamine, triethanolamine, glycocoll, diglycolamine and monoisopropanolamine etc.These compounds can be used alone or in combination.
Amines can also comprise hydroxylamine compound.Hydroxylamine compound can comprise azanol, diethyl hydroxylamine and ethylaminoethanol etc.
When composition comprises the amines that is less than about 3% weight ratio, remove the required time period of photoresist can become longer or can not remove photoresist.When the amount of amines surpasses about 20% weight ratio, can damage substrate or patterned layer.Therefore, based on the total amount of composition, the amount that is included in the amines in the composition can be about 3% to 20% weight ratio.
When composition also comprises hydroxylamine compound, can improve the efficient of removing of polymkeric substance.Yet, when the amount of azanol is less than about 1% weight ratio, removes efficient and can become insignificant, and when the amount of azanol surpasses about 3% weight ratio, can quicken corrosion of metal.Therefore, based on the total amount of composition, the amount that is included in the hydroxylamine compound in the composition can be about 1% to 3% weight ratio.
According to exemplary, composition can comprise corrosion inhibitor.In removing the process of photoresist, corrosion inhibitor can prevent to comprise the corrosion of the pattern of lower metal wiring.Corrosion inhibitor can comprise ascorbic acid, catechol, benzenetriol, quinhydrones and resorcinol.These compounds can be used alone or in combination.
When composition comprises the corrosion inhibitor that is less than about 0.1% weight ratio, can weaken the anti-corrosion effects of metal line.When corrosion inhibitor surpasses about 10% weight ratio, can disturb removing of polymkeric substance and photoresist residue.Therefore, based on the total amount of composition, the amount that is included in the corrosion inhibitor in the composition can be about 0.1% to 10% weight ratio.
Corrosion inhibitor can also comprise the compound based on the pyrroles.Compound based on the pyrroles can comprise benzotriazole, imidazoles and Aminotetrazole etc.These compounds can be used alone or in combination.
Based on the total amount of composition, composition can comprise the compound based on the pyrroles of about 0.1% to 0.5% weight ratio.When the amount based on pyrroles's compound was less than about 0.1% weight ratio, it is insignificant that anti-corrosion effects can become, and when the amount based on pyrroles's compound surpasses about 0.5% weight ratio, can reduce the efficient of removing of polymkeric substance.Therefore, based on the total amount of composition, the amount based on pyrroles's compound that is included in the composition can be about 0.1% to 0.5% weight ratio.These compounds can be used alone or in combination.
According to exemplary of the present invention, can be with deionized water as solvent.Deionized water can dissolve the component that is included in the composition that is used for removing photoresist.The viscosity and the physical property that are used to remove the composition of photoresist can change according to the amount of deionized water.Therefore, consider the viscosity of removing efficient, composition of photoresist and physical property etc., can suitably control the amount of deionized water.
The composition that is used to remove photoresist can be removed the photoresist pattern as etching mask, and described etching mask is used for forming Thinfilm pattern in the process of the method that is prepared the semiconductor device that comprises DRAM, SRAM, flash memory device etc.After forming film figure, composition can be effectively and is fully removed the photoresist pattern and do not damage metal line, precise pattern etc.
After utilizing the photoresist pattern to finish engraving method, comprise that the etch residues of organic material, conducting polymer and oxidable polymkeric substance can stay the surface portion of the substrate that comprises Thinfilm pattern.Utilize the composition that is used to remove photoresist of the present invention can remove etch residues neatly.Especially, when metal line comprises titanium (Ti), can remove the metal etch residue that produces by titanium effectively.In addition, when use conventional use be used to remove the composition of photoresist the time, be difficult to remove oxidable polymkeric substance.Yet the composition of exemplary of the present invention can be removed oxidable polymkeric substance easily.
According to exemplary, in the process of the method for semiconductor pattern that implement to make semiconductor device, utilize the photoresist layer to form after the film figure, can use the composition that is used to remove photoresist to remove the photoresist layer as etching mask.
Hereinafter, will describe the preferred embodiments of the invention in detail.
Be used to remove the preparation of compositions of photoresist
Embodiment 1
Based on the total amount of composition, will mix as the N-methylmorpholine N-oxide (NMMO) of 5% weight ratio of amine oxide, as the diethylene glycol monomethyl ether (MDG) of 40% weight ratio of ether compound, as the monoethanolamine (MEA) of 20% weight ratio of amines, as the deionized water of the catechol (CAT) of 8% weight ratio of corrosion inhibitor and 27% weight ratio and prepare the composition that is used to remove photoresist.
Embodiment 2 to 11
Except component and amount that change as shown in table 1 added, by carrying out preparing the composition that is used to remove photoresist with embodiment 1 described essentially identical step.
Embodiment 12 to 14
Except component that change as shown in table 1 added and the hydroxylamine compound of measuring also other adding 2% weight ratio, by carrying out preparing the composition that is used to remove photoresist with embodiment 1 described essentially identical step.
Embodiment 15 to 19
Except component and amount that change as shown in table 1 added, by carrying out preparing the composition that is used to remove photoresist with embodiment 1 described essentially identical step.
Table 1
Comparing embodiment 1 to 10
Except component and amount that change as shown in table 2 added, by carrying out preparing the composition that is used to remove photoresist with embodiment 1 described essentially identical step.
Be used to remove the composition of photoresist for preparation, utilize N-methylmorpholine-N-oxide as amine oxide, diethylene glycol monomethyl ether as ether compound, monoethanolamine as amines, catechol or benzotriazole as corrosion inhibitor.Optionally add azanol as hydroxylamine compound.Optionally, replace ether compound with polar solvent N-Methyl pyrrolidone or dimethyl acetamide.The deionized water of surplus mixed prepare the composition that is used to remove photoresist.Employed every kind of component of composition and amount that preparation is used for removing photoresist are presented at table 2.
Table 2
In table 1 and 2, MEA represents monoethanolamine, HA represents azanol, EAE represents ethylaminoethanol, DEHA represents diethyl hydroxylamine, NMMO represents N-methylmorpholine-N-oxide, and MDG represents diethylene glycol monomethyl ether, and EDG represents diethyl carbitol, DGDE represents diethylene glycol dimethyl ether, BDG represents diethylene glycol-butyl ether, and NMP represents N-Methyl pyrrolidone, and DMAC represents dimethyl acetamide, VC represents ascorbic acid, CAT represents catechol, and BT represents benzotriazole, and HQ represents that quinhydrones and RC represent resorcinol.
Be used to remove photoresist composition remove efficiency rating
Evaluation every kind by 1 to 10 preparation of embodiment 1 to 19 and comparing embodiment be used to remove photoresist composition remove efficient.
In order to estimate the performance of the composition that is used to remove photoresist, carry out dry etch method about wafer, described method comprises metal, oxide compound and nitride at least a of exposure such as aluminium, tungsten and titanium.In this experiment, after carrying out engraving method, form the aluminium pattern.Then, under 60 ℃, the specimen that will comprise the polymkeric substance that stays behind the engraving method and photoresist is immersed in every kind of composition that is used for removing photoresist 10 minutes.Subsequently test specimen is used isopropyl alcohol (IPA) drip washing 3 minutes, used deionized water drip washing then 3 minutes.Test specimen checked with what estimate polymkeric substance and photoresist with nitrogen drying and by the SEM measurement remove efficient and corrosion of metal degree.
The evaluation result that by the preparation of the foregoing description and comparing embodiment every kind is used for removing the composition of photoresist is presented at table 3.
Table 3
In table 3, PR represents that the polymkeric substance of PR test removes efficient, ◎ represents excellence and means almost to have removed all polymkeric substance, zero represents good and means to stay a spot of polymkeric substance, △ represents general and means to stay a large amount of polymkeric substance, and X represents bad and mean that nearly all polymkeric substance is not removed and stays.
MA represents that the metal erosion of MA test prevents degree, ◎ represents excellence and means not observe metal erosion, zero expression is good and mean that observing little metal corrodes, △ represents general and means a large amount of metal erosion of observing on the part pattern, and X represents bad and mean that not obtaining metal erosion prevents effect.
OA represents that the oxide skin(coating) of OA test damages the degree that prevents, ◎ represents excellence and means the damage of not observing oxide skin(coating), zero represents well and means the damage of observing small degree on the oxide skin(coating), △ represents general and means the damage of observing oxide skin(coating) certain degree on the part pattern, and X represents bad and mean the damage of observing oxide skin(coating).
MT represents the metal line formation method in the semiconductor machining, and can expose aluminium, nitride, oxide etc. after carrying out this method.CT represents the film formation method of the insulation course between the metal line in the semiconductor machining, and can exposed oxide after carrying out engraving method.Carry out obtaining specimen from wafer after each MT and the CT, described specimen comprises the photoresist residue that stays in the dry etch method and the polymkeric substance of generation.
Referring to table 3, being used to of embodiment 1 to 19 compositions table of removing photoresist reveal excellence or good polymkeric substance and remove efficient, metal erosion and prevent that character and oxide skin(coating) from damaging and prevent character.
Fig. 1 be presented at application according to embodiment 1 preparation be used to remove after the composition of photoresist, utilize the photo of field emission scanning electron microscope in the wafer photographs that comprises metal pattern.
Referring to Fig. 1, removed nearly all polymkeric substance, and the corrosion of lower metal layer prevents respond well.In addition, on the metal pattern that forms on the wafer, do not observe damage.
Fig. 2 is presented at application and is used to remove after the composition of photoresist the photo on the Metal Contact that forms on the wafer according to embodiment 1 preparation.
Referring to Fig. 2, removed polymkeric substance nearly all on contact hole and the wafer.
When catechol (CAT) and benzotriazole (BT) being mixed and during, even utilize a small amount of corrosion inhibitor shown in embodiment 4 to 9 just to improve the efficient of removing of photoresist as corrosion inhibitor.When adding hydroxylamine compound, shown in embodiment 12 to 14, improved the degree of removing of polymkeric substance.For ether compound, when considering metal erosion, diethylene glycol monomethyl ether (MDG) shows only result.
The composition that is used to remove photoresist of removing efficient and comparing embodiment 1 to 10 of composition that is used to remove photoresist of exemplary is compared, and the results are as follows.
Composition according to comparing embodiment 1 preparation utilizes the potpourri of CAT and BT as corrosion inhibitor.In this case, use the compd B T based on the pyrroles of excessive about 2% weight ratio.Can determine that from the result when the amount of BT surpassed about 0.5% weight ratio, the efficient of removing of polymkeric substance can variation.
Fig. 3 and 4 is presented at application and is used to remove after the composition of photoresist according to comparing embodiment 2 and 3 preparations every kinds, utilizes the photo of field emission scanning electron microscope in the wafer photographs that comprises metal pattern.
Referring to Fig. 3 and 4, do not comprise corrosion inhibitor or only comprise BT and reveal low polymer as the compositions table of corrosion inhibitor and remove efficient, therefore after the method for removing, observe the polymkeric substance of staying metal top and side wall portion.In addition, corrosion prevents the effect deficiency, and has damaged the aluminum portions of metal pattern sidewall.
Fig. 5 is presented at application and is used to remove after the composition of photoresist the photo on the Metal Contact that forms on the wafer according to comparing embodiment 2 preparation.
Referring to Fig. 5, because conventional stripping composition to the low efficient of removing of polymkeric substance, is therefore stayed on the substrate by the polymkeric substance of oxide skin(coating) generation.
Comparing embodiment 4 and 5 composition comprise NMP, DMAC wait the polymkeric substance that replaces being used to dissolving expansion and with the ether compound of the photoresist of substrate separation.Think that efficient is not enough to obtain such result owing to the polymkeric substance of composition is removed.
According to the composition of comparing embodiment 6, when composition comprised about 3% weight ratio or amine oxide still less, the time of removing of polymkeric substance had increased.The time of removing is greater than about 10 minutes reference process time.
According to the composition of comparing embodiment 7, being used to of comprising in addition improves polymkeric substance and removes the amount of the hydroxylamine compound of efficient and surpass about 3% weight ratio.Think and quickened corrosion of metal.
According to the composition of comparing embodiment 8 to 10, the amount of amines MEA is very few or too much and departed from preferred specified rate.Observe polymkeric substance remove efficient or corrosion has prevented the degree variation.When the amount of MEA is less than about 3% weight ratio, polymkeric substance remove deterioration of efficiency, and when the amount of MEA surpasses about 20% weight ratio, may damage the target material that comprises metal.
Exemplary according to the composition that is used to remove photoresist, can remove as the photoresist pattern of etching mask and not damage metal line and precise pattern, described etching mask is used to form DRAM, SRAM, flash memory device etc. in semiconductor making method.In addition, can remove etch residues effectively, this etch residues comprises organic material, conducting polymer, oxidable polymkeric substance etc., and stays and utilize on the patterned surfaces that photoresist carries out forming behind the engraving method as mask.
Aforementioned description of contents exemplary and be not interpreted into limitation ot it.Although described several exemplary embodiments, many variations that those skilled in the art can easily understand exemplary are possible, and do not deviate from the new instruction and the advantage of exemplary in fact.Therefore, being intended to the variation that all are such is included in the scope as the defined exemplary of claim.
Claims (12)
1. be used to remove the composition of photoresist, based on the total amount of described composition, described composition comprises:
The amine oxide of about 3% to 8% weight ratio;
The ether compound of about 40% to 60% weight ratio;
The amines of about 3% to 20% weight ratio;
The corrosion inhibitor of about 0.1% to 10% weight ratio; And
The deionized water of surplus.
2. composition as claimed in claim 1, wherein said amine oxide comprise and be selected from 2, at least a in 6-lutidines-N-oxide, pyridine-N-oxides and N-methylmorpholine-N-oxide.
3. composition as claimed in claim 1, wherein said ether compound comprise and are selected from least a in diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, carbitol, diethyl carbitol and the diethylene glycol-butyl ether.
4. composition as claimed in claim 1, wherein said amines comprise and are selected from least a in monoethanolamine, diethanolamine, triethanolamine, glycocoll, diglycolamine and the monoisopropanolamine.
5. composition as claimed in claim 4, based on the total amount of described composition, described composition also comprises the hydroxylamine compound of about 1% to 3% weight ratio.
6. composition as claimed in claim 5, wherein said hydroxylamine compound comprise and are selected from least a in azanol, diethyl hydroxylamine and the ethylaminoethanol.
7. composition as claimed in claim 1, wherein said corrosion inhibitor comprise and are selected from least a in ascorbic acid, catechol, benzenetriol, quinhydrones and the resorcinol.
8. composition as claimed in claim 7, based on the total amount of described composition, described composition also comprises the azole compounds of about 0.1% to 0.5% weight ratio.
9. composition as claimed in claim 8, wherein said azole compounds comprise and are selected from least a in benzotriazole, imidazoles and the Aminotetrazole.
10. form the method for semiconductor pattern, comprising:
On the film on the substrate, form the photoresist pattern,
By utilizing the photoresist pattern to come the described film of etching forming Thinfilm pattern as mask pattern, and
Utilization is used to remove the composition of photoresist and removes described photoresist pattern, and the described composition that is used to remove photoresist comprises amine oxide, ether compound, amines, corrosion inhibitor and deionized water.
11. method as claimed in claim 10, wherein based on the total amount of described composition, the described composition that is used to remove photoresist comprises:
The amine oxide of about 3% to 8% weight ratio;
The ether compound of about 40% to 60% weight ratio;
The amines of about 3% to 20% weight ratio;
The corrosion inhibitor of about 0.1% to 10% weight ratio; And
The deionized water of surplus.
12. method as claimed in claim 10, wherein said film are at least a in metal-oxide film and the nitride film.
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Cited By (1)
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| JP2019124948A (en) * | 2019-02-20 | 2019-07-25 | 東京応化工業株式会社 | Cleaning fluid for lithography and cleaning method of substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1839355A (en) * | 2003-08-19 | 2006-09-27 | 马林克罗特贝克公司 | Stripping and cleaning compositions for microelectronics |
| CN1875325A (en) * | 2003-10-29 | 2006-12-06 | 马林克罗特贝克公司 | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
| CN1967388A (en) * | 2005-11-18 | 2007-05-23 | 拉姆科技有限公司 | Composition for removing photoresist and method of forming a pattern using the same |
| CN1993457A (en) * | 2004-08-03 | 2007-07-04 | 马林克罗特贝克公司 | Cleaning compositions for microelectronics substrates |
| WO2010017160A2 (en) * | 2008-08-04 | 2010-02-11 | Advanced Technology Materials, Inc. | Environmentally friendly polymer stripping compositions |
-
2010
- 2010-06-18 CN CN 201010207338 patent/CN102289159A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1839355A (en) * | 2003-08-19 | 2006-09-27 | 马林克罗特贝克公司 | Stripping and cleaning compositions for microelectronics |
| CN1875325A (en) * | 2003-10-29 | 2006-12-06 | 马林克罗特贝克公司 | Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors |
| CN1993457A (en) * | 2004-08-03 | 2007-07-04 | 马林克罗特贝克公司 | Cleaning compositions for microelectronics substrates |
| CN1967388A (en) * | 2005-11-18 | 2007-05-23 | 拉姆科技有限公司 | Composition for removing photoresist and method of forming a pattern using the same |
| WO2010017160A2 (en) * | 2008-08-04 | 2010-02-11 | Advanced Technology Materials, Inc. | Environmentally friendly polymer stripping compositions |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019124948A (en) * | 2019-02-20 | 2019-07-25 | 東京応化工業株式会社 | Cleaning fluid for lithography and cleaning method of substrate |
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