TW200639595A - Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices - Google Patents

Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices

Info

Publication number
TW200639595A
TW200639595A TW095112784A TW95112784A TW200639595A TW 200639595 A TW200639595 A TW 200639595A TW 095112784 A TW095112784 A TW 095112784A TW 95112784 A TW95112784 A TW 95112784A TW 200639595 A TW200639595 A TW 200639595A
Authority
TW
Taiwan
Prior art keywords
polar
residue
solvent mixtures
microelectronic devices
liquid cleaners
Prior art date
Application number
TW095112784A
Other languages
Chinese (zh)
Inventor
David W Minsek
David D Bernhard
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200639595A publication Critical patent/TW200639595A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C11D2111/22—

Abstract

A liquid removal composition and process for removing post-ash residue, post-etch residue and/or bottom anti-reflective coating (BARC) residue from a microelectronic device having said residue thereon. The liquid removal composition includes a fluoride source and an amphiphilic solvent. The composition achieves high-efficiency removal of the residue material from the microelectronic device without damaging metal species or low-k dielectric materials employed in the microelectronic device architecture.
TW095112784A 2005-04-11 2006-04-11 Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices TW200639595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67016105P 2005-04-11 2005-04-11

Publications (1)

Publication Number Publication Date
TW200639595A true TW200639595A (en) 2006-11-16

Family

ID=37087593

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112784A TW200639595A (en) 2005-04-11 2006-04-11 Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices

Country Status (2)

Country Link
TW (1) TW200639595A (en)
WO (1) WO2006110645A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI612397B (en) * 2012-08-22 2018-01-21 杜邦股份有限公司 Photoresist strippers comprising fluorosurfactants

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US7960328B2 (en) 2005-11-09 2011-06-14 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
CN101169598A (en) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 Photoresist detergent
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
TW200934865A (en) * 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
US20100180914A1 (en) * 2009-01-22 2010-07-22 Electric Power Research Institute, Inc. Conductor cleaning system and method
US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
SG10201505535VA (en) 2010-07-16 2015-09-29 Entegris Inc Aqueous cleaner for the removal of post-etch residues
CN103249849B (en) 2010-08-20 2015-11-25 安格斯公司 The sustainable method of precious metal and base metal is reclaimed from electronic waste
CN105304485B (en) 2010-10-06 2019-02-12 恩特格里斯公司 The composition and method of selective etch metal nitride
US9416338B2 (en) 2010-10-13 2016-08-16 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
CN102109777B (en) * 2010-12-15 2012-08-22 绵阳艾萨斯电子材料有限公司 Regeneration liquid of plasma display barrier wall slurry
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
US10133180B2 (en) 2011-10-05 2018-11-20 Avantor Performance Materials Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
CN104145324B (en) 2011-12-28 2017-12-22 恩特格里斯公司 Composition and method for selective etch titanium nitride
US10176979B2 (en) 2012-02-15 2019-01-08 Entegris, Inc. Post-CMP removal using compositions and method of use
KR20150016574A (en) 2012-05-18 2015-02-12 인티그리스, 인코포레이티드 Composition and process for stripping photoresist from a surface including titanium nitride
CN102808190B (en) * 2012-08-31 2014-06-25 昆山艾森半导体材料有限公司 Environmentally-friendly weak alkaline low-temperature deburring softening solution, and preparation method and use method thereof
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102118964B1 (en) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Compositions for cleaning iii-v semiconductor materials and methods of using same
US9102901B2 (en) 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
EP2964725B1 (en) 2013-03-04 2021-06-23 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (en) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
WO2015017659A1 (en) 2013-07-31 2015-02-05 Advanced Technology Materials, Inc. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
SG11201605003WA (en) 2013-12-20 2016-07-28 Entegris Inc Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
US10867859B2 (en) * 2017-11-17 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having isolation structures with liners
WO2021205885A1 (en) * 2020-04-09 2021-10-14 昭和電工株式会社 Composition, and method for cleaning adhesive polymer

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JP3755776B2 (en) * 1996-07-11 2006-03-15 東京応化工業株式会社 Rinsing composition for lithography and substrate processing method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI612397B (en) * 2012-08-22 2018-01-21 杜邦股份有限公司 Photoresist strippers comprising fluorosurfactants

Also Published As

Publication number Publication date
WO2006110645A2 (en) 2006-10-19
WO2006110645A3 (en) 2007-03-01

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