CN100386850C - 研磨液及研磨方法 - Google Patents
研磨液及研磨方法 Download PDFInfo
- Publication number
- CN100386850C CN100386850C CNB028265513A CN02826551A CN100386850C CN 100386850 C CN100386850 C CN 100386850C CN B028265513 A CNB028265513 A CN B028265513A CN 02826551 A CN02826551 A CN 02826551A CN 100386850 C CN100386850 C CN 100386850C
- Authority
- CN
- China
- Prior art keywords
- polishing
- polishing liquid
- grinding
- liquid according
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001334376 | 2001-10-31 | ||
| JP334376/2001 | 2001-10-31 | ||
| JP10280/2002 | 2002-01-18 | ||
| JP2002010280 | 2002-01-18 | ||
| JP160181/2002 | 2002-05-31 | ||
| JP2002160181 | 2002-05-31 | ||
| PCT/JP2002/011370 WO2003038883A1 (en) | 2001-10-31 | 2002-10-31 | Polishing fluid and polishing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101077532A Division CN101058713B (zh) | 2001-10-31 | 2002-10-31 | 研磨液及研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1610963A CN1610963A (zh) | 2005-04-27 |
| CN100386850C true CN100386850C (zh) | 2008-05-07 |
Family
ID=27347759
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028265513A Expired - Lifetime CN100386850C (zh) | 2001-10-31 | 2002-10-31 | 研磨液及研磨方法 |
| CN2007101077532A Expired - Fee Related CN101058713B (zh) | 2001-10-31 | 2002-10-31 | 研磨液及研磨方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101077532A Expired - Fee Related CN101058713B (zh) | 2001-10-31 | 2002-10-31 | 研磨液及研磨方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US20050050803A1 (enExample) |
| JP (3) | JPWO2003038883A1 (enExample) |
| KR (1) | KR100704690B1 (enExample) |
| CN (2) | CN100386850C (enExample) |
| TW (2) | TW200300168A (enExample) |
| WO (1) | WO2003038883A1 (enExample) |
Families Citing this family (113)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100386850C (zh) * | 2001-10-31 | 2008-05-07 | 日立化成工业株式会社 | 研磨液及研磨方法 |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| US6858124B2 (en) * | 2002-12-16 | 2005-02-22 | 3M Innovative Properties Company | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
| JP4541674B2 (ja) * | 2003-09-30 | 2010-09-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2005123482A (ja) * | 2003-10-17 | 2005-05-12 | Fujimi Inc | 研磨方法 |
| JP4774669B2 (ja) * | 2003-10-27 | 2011-09-14 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| JP4428995B2 (ja) * | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | 金属膜のエッチング液組成物 |
| KR100596865B1 (ko) * | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의cmp 방법 |
| US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| JP2005294798A (ja) * | 2004-03-08 | 2005-10-20 | Asahi Glass Co Ltd | 研磨剤および研磨方法 |
| CN100468647C (zh) * | 2004-03-08 | 2009-03-11 | 旭硝子株式会社 | 研磨剂以及研磨方法 |
| TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
| JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US20080105651A1 (en) * | 2004-09-14 | 2008-05-08 | Katsumi Mabuchi | Polishing Slurry for Cmp |
| KR100854483B1 (ko) * | 2004-09-14 | 2008-08-26 | 히다치 가세고교 가부시끼가이샤 | Cmp용 연마 슬러리 |
| US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
| KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| EP1757419B1 (de) * | 2005-08-25 | 2012-10-17 | Freiberger Compound Materials GmbH | Verfahren, Vorrichtung und Slurry zum Drahtsägen |
| JP4390757B2 (ja) * | 2005-08-30 | 2009-12-24 | 花王株式会社 | 研磨液組成物 |
| WO2007029465A1 (ja) * | 2005-09-09 | 2007-03-15 | Asahi Glass Company, Limited | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
| US7708904B2 (en) * | 2005-09-09 | 2010-05-04 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
| US7572741B2 (en) | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
| JP2007103463A (ja) * | 2005-09-30 | 2007-04-19 | Sumitomo Electric Ind Ltd | ポリシングスラリー、GaxIn1−xAsyP1−y結晶の表面処理方法およびGaxIn1−xAsyP1−y結晶基板 |
| US8512593B2 (en) * | 2005-11-04 | 2013-08-20 | Cheil Industries, Inc. | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same |
| KR100643628B1 (ko) * | 2005-11-04 | 2006-11-10 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
| KR100827594B1 (ko) * | 2006-11-07 | 2008-05-07 | 제일모직주식회사 | 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법 |
| JP4868840B2 (ja) * | 2005-11-30 | 2012-02-01 | Jsr株式会社 | 半導体装置の製造方法 |
| TWI305802B (en) * | 2006-03-16 | 2009-02-01 | Epoch Material Co Ltd | Chemical mechanical polishing composition |
| JPWO2007123235A1 (ja) * | 2006-04-24 | 2009-09-10 | 日立化成工業株式会社 | Cmp用研磨液及び研磨方法 |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| US7550092B2 (en) * | 2006-06-19 | 2009-06-23 | Epoch Material Co., Ltd. | Chemical mechanical polishing composition |
| US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US8591764B2 (en) * | 2006-12-20 | 2013-11-26 | 3M Innovative Properties Company | Chemical mechanical planarization composition, system, and method of use |
| US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
| US20080148652A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Compositions for chemical mechanical planarization of copper |
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| US9202709B2 (en) * | 2008-03-19 | 2015-12-01 | Fujifilm Corporation | Polishing liquid for metal and polishing method using the same |
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| WO2010032616A1 (ja) * | 2008-09-19 | 2010-03-25 | 三菱瓦斯化学株式会社 | 銅配線表面保護液および半導体回路の製造方法 |
| JP5469840B2 (ja) * | 2008-09-30 | 2014-04-16 | 昭和電工株式会社 | 炭化珪素単結晶基板の製造方法 |
| US20110240592A1 (en) * | 2008-10-29 | 2011-10-06 | Mitsubishi Gas Chemical Company, Inc. | Texture processing liquid for transparent conductive film mainly composed of zinc oxide and method for producing transparent conductive film having recesses and projections |
| JP4935843B2 (ja) * | 2009-03-30 | 2012-05-23 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
| JP5640977B2 (ja) | 2009-07-16 | 2014-12-17 | 日立化成株式会社 | パラジウム研磨用cmp研磨液及び研磨方法 |
| SG176255A1 (en) * | 2009-08-19 | 2012-01-30 | Hitachi Chemical Co Ltd | Polishing solution for cmp and polishing method |
| JP2011110637A (ja) * | 2009-11-25 | 2011-06-09 | Asahi Glass Co Ltd | 磁気ディスク用ガラス基板の製造方法 |
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| WO2011099313A1 (ja) | 2010-02-15 | 2011-08-18 | 日立化成工業株式会社 | Cmp研磨液及び研磨方法 |
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| JP5695367B2 (ja) | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
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| JP5590144B2 (ja) | 2010-11-22 | 2014-09-17 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
| KR20130129400A (ko) | 2010-11-22 | 2013-11-28 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 |
| JP2012146976A (ja) | 2010-12-24 | 2012-08-02 | Hitachi Chem Co Ltd | 研磨液及びこの研磨液を用いた基板の研磨方法 |
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| EP2502969A1 (en) * | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
| CN102952466A (zh) * | 2011-08-24 | 2013-03-06 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| TWI577834B (zh) | 2011-10-21 | 2017-04-11 | 富士軟片電子材料美國股份有限公司 | 新穎的鈍化組成物及方法 |
| JP6077208B2 (ja) * | 2011-11-25 | 2017-02-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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| US10647900B2 (en) | 2013-07-11 | 2020-05-12 | Basf Se | Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors |
| JPWO2015019820A1 (ja) * | 2013-08-09 | 2017-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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| CN103526207B (zh) * | 2013-09-23 | 2016-01-20 | 无锡阳工机械制造有限公司 | 一种除锈浆料 |
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| US8084363B2 (en) | 2011-12-27 |
| JP2008199036A (ja) | 2008-08-28 |
| US20050050803A1 (en) | 2005-03-10 |
| JP5447437B2 (ja) | 2014-03-19 |
| TW200831656A (en) | 2008-08-01 |
| KR100704690B1 (ko) | 2007-04-10 |
| US20070232197A1 (en) | 2007-10-04 |
| US8481428B2 (en) | 2013-07-09 |
| JP2011205113A (ja) | 2011-10-13 |
| CN101058713B (zh) | 2011-02-09 |
| CN101058713A (zh) | 2007-10-24 |
| CN1610963A (zh) | 2005-04-27 |
| TW200300168A (en) | 2003-05-16 |
| US20090156007A1 (en) | 2009-06-18 |
| KR20050042038A (ko) | 2005-05-04 |
| TWI308926B (enExample) | 2009-04-21 |
| TWI314950B (en) | 2009-09-21 |
| US20120064721A1 (en) | 2012-03-15 |
| US8084362B2 (en) | 2011-12-27 |
| WO2003038883A1 (en) | 2003-05-08 |
| JPWO2003038883A1 (ja) | 2005-02-24 |
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