CN100386850C - 研磨液及研磨方法 - Google Patents

研磨液及研磨方法 Download PDF

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Publication number
CN100386850C
CN100386850C CNB028265513A CN02826551A CN100386850C CN 100386850 C CN100386850 C CN 100386850C CN B028265513 A CNB028265513 A CN B028265513A CN 02826551 A CN02826551 A CN 02826551A CN 100386850 C CN100386850 C CN 100386850C
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CN
China
Prior art keywords
polishing
polishing liquid
grinding
liquid according
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB028265513A
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English (en)
Chinese (zh)
Other versions
CN1610963A (zh
Inventor
天野仓仁
樱田刚史
安西创
深泽正人
佐佐木晶市
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Resonac Corp
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Hitachi Chemical Co Ltd
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Publication date
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Publication of CN1610963A publication Critical patent/CN1610963A/zh
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Publication of CN100386850C publication Critical patent/CN100386850C/zh
Anticipated expiration legal-status Critical
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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • C23F3/06Heavy metals with acidic solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB028265513A 2001-10-31 2002-10-31 研磨液及研磨方法 Expired - Lifetime CN100386850C (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001334376 2001-10-31
JP334376/2001 2001-10-31
JP10280/2002 2002-01-18
JP2002010280 2002-01-18
JP160181/2002 2002-05-31
JP2002160181 2002-05-31
PCT/JP2002/011370 WO2003038883A1 (en) 2001-10-31 2002-10-31 Polishing fluid and polishing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2007101077532A Division CN101058713B (zh) 2001-10-31 2002-10-31 研磨液及研磨方法

Publications (2)

Publication Number Publication Date
CN1610963A CN1610963A (zh) 2005-04-27
CN100386850C true CN100386850C (zh) 2008-05-07

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB028265513A Expired - Lifetime CN100386850C (zh) 2001-10-31 2002-10-31 研磨液及研磨方法
CN2007101077532A Expired - Fee Related CN101058713B (zh) 2001-10-31 2002-10-31 研磨液及研磨方法

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CN2007101077532A Expired - Fee Related CN101058713B (zh) 2001-10-31 2002-10-31 研磨液及研磨方法

Country Status (6)

Country Link
US (4) US20050050803A1 (enExample)
JP (3) JPWO2003038883A1 (enExample)
KR (1) KR100704690B1 (enExample)
CN (2) CN100386850C (enExample)
TW (2) TW200300168A (enExample)
WO (1) WO2003038883A1 (enExample)

Families Citing this family (113)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100386850C (zh) * 2001-10-31 2008-05-07 日立化成工业株式会社 研磨液及研磨方法
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
US6858124B2 (en) * 2002-12-16 2005-02-22 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
JP4541674B2 (ja) * 2003-09-30 2010-09-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP2005123482A (ja) * 2003-10-17 2005-05-12 Fujimi Inc 研磨方法
JP4774669B2 (ja) * 2003-10-27 2011-09-14 日立化成工業株式会社 研磨液及び研磨方法
JP4428995B2 (ja) * 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
KR100596865B1 (ko) * 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의cmp 방법
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
CN100468647C (zh) * 2004-03-08 2009-03-11 旭硝子株式会社 研磨剂以及研磨方法
TW200613485A (en) * 2004-03-22 2006-05-01 Kao Corp Polishing composition
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20080105651A1 (en) * 2004-09-14 2008-05-08 Katsumi Mabuchi Polishing Slurry for Cmp
KR100854483B1 (ko) * 2004-09-14 2008-08-26 히다치 가세고교 가부시끼가이샤 Cmp용 연마 슬러리
US7449124B2 (en) * 2005-02-25 2008-11-11 3M Innovative Properties Company Method of polishing a wafer
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법
EP1757419B1 (de) * 2005-08-25 2012-10-17 Freiberger Compound Materials GmbH Verfahren, Vorrichtung und Slurry zum Drahtsägen
JP4390757B2 (ja) * 2005-08-30 2009-12-24 花王株式会社 研磨液組成物
WO2007029465A1 (ja) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法
US7708904B2 (en) * 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7572741B2 (en) 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、GaxIn1−xAsyP1−y結晶の表面処理方法およびGaxIn1−xAsyP1−y結晶基板
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법
KR100827594B1 (ko) * 2006-11-07 2008-05-07 제일모직주식회사 다결정 실리콘 연마용 cmp 슬러리 조성물 및 이의 제조방법
JP4868840B2 (ja) * 2005-11-30 2012-02-01 Jsr株式会社 半導体装置の製造方法
TWI305802B (en) * 2006-03-16 2009-02-01 Epoch Material Co Ltd Chemical mechanical polishing composition
JPWO2007123235A1 (ja) * 2006-04-24 2009-09-10 日立化成工業株式会社 Cmp用研磨液及び研磨方法
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
US7550092B2 (en) * 2006-06-19 2009-06-23 Epoch Material Co., Ltd. Chemical mechanical polishing composition
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US8591764B2 (en) * 2006-12-20 2013-11-26 3M Innovative Properties Company Chemical mechanical planarization composition, system, and method of use
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
KR100831265B1 (ko) * 2006-12-29 2008-05-22 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP5285866B2 (ja) * 2007-03-26 2013-09-11 富士フイルム株式会社 研磨液
JP2008307631A (ja) * 2007-06-13 2008-12-25 Asahi Glass Co Ltd ガラス基板研磨方法
JP5287720B2 (ja) * 2007-07-05 2013-09-11 日立化成株式会社 金属膜用研磨液及び研磨方法
US8501625B2 (en) 2007-07-10 2013-08-06 Hitachi Chemical Co., Ltd. Polishing liquid for metal film and polishing method
JP2009050920A (ja) * 2007-08-23 2009-03-12 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
KR101232442B1 (ko) 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
EP2048207A1 (en) * 2007-10-11 2009-04-15 STMicroelectronics S.r.l. Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Cmp用研磨液及び研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
JP2009158810A (ja) * 2007-12-27 2009-07-16 Toshiba Corp 化学的機械的研磨用スラリーおよび半導体装置の製造方法
US9202709B2 (en) * 2008-03-19 2015-12-01 Fujifilm Corporation Polishing liquid for metal and polishing method using the same
CN102150242B (zh) * 2008-09-08 2013-05-15 三菱瓦斯化学株式会社 铜布线表面保护液及半导体电路元件的制造方法
WO2010032616A1 (ja) * 2008-09-19 2010-03-25 三菱瓦斯化学株式会社 銅配線表面保護液および半導体回路の製造方法
JP5469840B2 (ja) * 2008-09-30 2014-04-16 昭和電工株式会社 炭化珪素単結晶基板の製造方法
US20110240592A1 (en) * 2008-10-29 2011-10-06 Mitsubishi Gas Chemical Company, Inc. Texture processing liquid for transparent conductive film mainly composed of zinc oxide and method for producing transparent conductive film having recesses and projections
JP4935843B2 (ja) * 2009-03-30 2012-05-23 日立化成工業株式会社 研磨液及び研磨方法
JP5640977B2 (ja) 2009-07-16 2014-12-17 日立化成株式会社 パラジウム研磨用cmp研磨液及び研磨方法
SG176255A1 (en) * 2009-08-19 2012-01-30 Hitachi Chemical Co Ltd Polishing solution for cmp and polishing method
JP2011110637A (ja) * 2009-11-25 2011-06-09 Asahi Glass Co Ltd 磁気ディスク用ガラス基板の製造方法
JP5251861B2 (ja) * 2009-12-28 2013-07-31 信越化学工業株式会社 合成石英ガラス基板の製造方法
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
WO2011099313A1 (ja) 2010-02-15 2011-08-18 日立化成工業株式会社 Cmp研磨液及び研磨方法
US9982177B2 (en) 2010-03-12 2018-05-29 Hitachi Chemical Company, Ltd Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Cmp研磨液及び研磨方法
JP5695367B2 (ja) 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5657318B2 (ja) * 2010-09-27 2015-01-21 富士フイルム株式会社 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法
JP5590144B2 (ja) 2010-11-22 2014-09-17 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基板の研磨方法
KR20130129400A (ko) 2010-11-22 2013-11-28 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
JP2012146976A (ja) 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
KR101938022B1 (ko) 2011-03-11 2019-01-11 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 신규한 에칭 조성물
EP2502969A1 (en) * 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
CN102952466A (zh) * 2011-08-24 2013-03-06 安集微电子(上海)有限公司 一种化学机械抛光液
TWI577834B (zh) 2011-10-21 2017-04-11 富士軟片電子材料美國股份有限公司 新穎的鈍化組成物及方法
JP6077208B2 (ja) * 2011-11-25 2017-02-08 株式会社フジミインコーポレーテッド 研磨用組成物
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
CN102585706B (zh) * 2012-01-09 2013-11-20 清华大学 酸性化学机械抛光组合物
SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
WO2013125445A1 (ja) 2012-02-21 2013-08-29 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
SG11201407086TA (en) 2012-05-22 2015-02-27 Hitachi Chemical Co Ltd Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
CN104334675B (zh) 2012-05-22 2016-10-26 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体
KR102034328B1 (ko) 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP6273281B2 (ja) * 2012-08-24 2018-01-31 エコラブ ユーエスエイ インク サファイア表面を研磨する方法
US8709277B2 (en) 2012-09-10 2014-04-29 Fujifilm Corporation Etching composition
JP6291026B2 (ja) 2013-03-15 2018-03-14 エコラボ ユーエスエー インコーポレイティド サファイアの表面を研磨する方法
KR101348515B1 (ko) * 2013-05-22 2014-01-08 동우 화인켐 주식회사 금속배선 형성을 위한 저점도 식각용액
US10647900B2 (en) 2013-07-11 2020-05-12 Basf Se Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
JPWO2015019820A1 (ja) * 2013-08-09 2017-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子(上海)有限公司 一种碱性阻挡层化学机械抛光液
CN103526207B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种除锈浆料
CN103498160B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103484876B (zh) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 一种除锈浆料
CN104449564A (zh) * 2013-09-23 2015-03-25 中芯国际集成电路制造(上海)有限公司 单分散研磨液及其制备方法、无机氧化物溶胶制备方法
CN103498161B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN104647197B (zh) * 2013-11-22 2019-01-04 安集微电子(上海)有限公司 一种用于抛光钽的化学机械抛光方法
JP2015203081A (ja) * 2014-04-15 2015-11-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP2017122134A (ja) * 2014-05-22 2017-07-13 日立化成株式会社 金属膜用研磨液及びそれを用いた研磨方法
CN104130715B (zh) * 2014-07-01 2015-09-23 安徽拓普森电池有限责任公司 一种用于半导体集成电路中金属钨的抛光液及其制备方法
CN104592896A (zh) * 2014-12-31 2015-05-06 上海新安纳电子科技有限公司 一种化学机械抛光液
JP2016141765A (ja) * 2015-02-04 2016-08-08 ニッタ・ハース株式会社 研磨用組成物
JP6638208B2 (ja) * 2015-04-02 2020-01-29 日立化成株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
WO2017098986A1 (ja) * 2015-12-09 2017-06-15 コニカミノルタ株式会社 研磨材スラリーの再生方法
US10442055B2 (en) * 2016-02-18 2019-10-15 Iowa State University Research Foundation, Inc. Lubricated mechanical polishing
JP6737894B2 (ja) 2016-03-01 2020-08-12 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ケミカルメカニカルポリッシング方法
TWI601808B (zh) * 2016-03-01 2017-10-11 羅門哈斯電子材料Cmp控股公司 化學機械研磨方法
CN106010297B (zh) * 2016-06-20 2018-07-31 上海新安纳电子科技有限公司 一种氧化铝抛光液的制备方法
US10377014B2 (en) 2017-02-28 2019-08-13 Ecolab Usa Inc. Increased wetting of colloidal silica as a polishing slurry
JP7060573B2 (ja) * 2017-03-06 2022-04-26 株式会社フジミインコーポレーテッド 表面処理組成物、およびその製造方法、ならびに表面処理組成物を用いた表面処理方法および半導体基板の製造方法
CN108690507A (zh) * 2018-07-02 2018-10-23 江西汇诺科技有限公司 高性能磨料抛光液
CN109536042B (zh) * 2018-12-28 2021-06-25 河南联合精密材料股份有限公司 一种油性抛光液及其制备方法与应用
ES3025805T3 (en) * 2019-05-13 2025-06-09 Ecolab Usa Inc 1,2,4-triazolo[1,5-a] pyrimidine derivative as copper corrosion inhibitor
CN115636592B (zh) * 2021-12-31 2024-05-24 深圳市海风润滑技术有限公司 一种高稳定性蒙砂粉及制备方法
CN114479675B (zh) * 2022-03-08 2023-05-16 昆山捷纳电子材料有限公司 一种用于光纤接头端面的抛光液组合物
CN115112665B (zh) * 2022-06-23 2025-09-09 鹰潭市检验检测认证院(鹰潭市综合检验检测中心、江西省铜及铜产品质量检验检测中心) 一种用于铜及铜合金显微组织的浸蚀剂及快速检验方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502251A (en) * 1992-05-26 1996-03-26 Bayer Ag Imides and their salts, as well as their use
CN1216727A (zh) * 1997-10-31 1999-05-19 株式会社日立制作所 研磨方法
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
WO2000039844A1 (fr) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
KR930002764B1 (ko) 1988-06-03 1993-04-10 닛뽄 몬산토 가부시끼가이샤 실리콘 웨이퍼 연마용 화합물
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JPH05112775A (ja) 1991-10-22 1993-05-07 Sumitomo Chem Co Ltd 金属材料の研磨用組成物
JP3309442B2 (ja) 1992-10-14 2002-07-29 ソニー株式会社 平坦化絶縁膜の形成方法
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
JPH07183288A (ja) 1993-12-24 1995-07-21 Toshiba Corp 半導体ウェーハ処理剤
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3192968B2 (ja) 1995-06-08 2001-07-30 株式会社東芝 銅系金属用研磨液および半導体装置の製造方法
US6046110A (en) 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
JP3015763B2 (ja) 1996-08-30 2000-03-06 三洋電機株式会社 半導体装置の製造方法
JP3503365B2 (ja) 1996-10-25 2004-03-02 旭硝子株式会社 表面処理された基材
JPH1133896A (ja) 1997-05-22 1999-02-09 Nippon Steel Corp 研磨砥粒、研磨剤及び研磨方法
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6217416B1 (en) 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
JP2000053946A (ja) 1998-08-05 2000-02-22 Showa Denko Kk 研磨材組成物
JP2000144109A (ja) 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
JP4171858B2 (ja) 1999-06-23 2008-10-29 Jsr株式会社 研磨用組成物および研磨方法
US6582623B1 (en) 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
JP4231950B2 (ja) * 1999-10-18 2009-03-04 株式会社トクヤマ 金属膜用研磨剤
US6435944B1 (en) * 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6679761B1 (en) 1999-11-04 2004-01-20 Seimi Chemical Co., Ltd. Polishing compound for semiconductor containing peptide
US6720264B2 (en) * 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
JP2001135601A (ja) 1999-11-09 2001-05-18 Speedfam Co Ltd 半導体デバイス平坦化の研磨方法
JP2001144060A (ja) 1999-11-11 2001-05-25 Hitachi Chem Co Ltd 金属積層膜を有する基板の研磨方法
JP3314770B2 (ja) 1999-11-15 2002-08-12 日本電気株式会社 半導体装置及びその製造方法
WO2001044402A1 (en) 1999-12-17 2001-06-21 Cabot Microelectronics Corporation Method of polishing or planarizing a substrate
JP3490038B2 (ja) 1999-12-28 2004-01-26 Necエレクトロニクス株式会社 金属配線形成方法
JP4001219B2 (ja) 2000-10-12 2007-10-31 Jsr株式会社 化学機械研磨用水系分散体及び化学機械研磨方法
AU3057601A (en) 2000-02-04 2001-08-14 Showa Denko Kabushiki Kaisha Polishing composite for use in lsi manufacture and method of manufacturing lsi
TWI296006B (enExample) * 2000-02-09 2008-04-21 Jsr Corp
JP2001244240A (ja) * 2000-02-25 2001-09-07 Speedfam Co Ltd 半導体ウエハの製造方法
JP3624809B2 (ja) 2000-02-29 2005-03-02 昭和電工株式会社 洗浄剤組成物、洗浄方法及びその用途
JP2001269860A (ja) 2000-03-27 2001-10-02 Shibaura Mechatronics Corp 銅系金属研磨用スラリーおよび銅系金属膜の研磨方法
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6555510B2 (en) * 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
SG115405A1 (en) * 2001-09-17 2005-10-28 Inst Of Microelectronics Method for reducing dishing in chemical mechanical polishing
WO2003036705A1 (en) * 2001-10-26 2003-05-01 Asahi Glass Company, Limited Polishing compound, method for production thereof and polishing method
CN100386850C (zh) * 2001-10-31 2008-05-07 日立化成工业株式会社 研磨液及研磨方法
US6746498B1 (en) * 2002-12-12 2004-06-08 Intel Corporation Abrasive with a modified surface and a method for making it

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502251A (en) * 1992-05-26 1996-03-26 Bayer Ag Imides and their salts, as well as their use
US6022400A (en) * 1997-05-22 2000-02-08 Nippon Steel Corporation Polishing abrasive grains, polishing agent and polishing method
CN1216727A (zh) * 1997-10-31 1999-05-19 株式会社日立制作所 研磨方法
WO2000039844A1 (fr) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes

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