TWI305802B - Chemical mechanical polishing composition - Google Patents

Description

1305802 IX. Description of the Invention: [Technical Field] The present invention relates to a chemical mechanical polishing composition, and more particularly to a chemical mechanical polishing composition for use in a semiconductor process and comprising a metal residual inhibitor. [Prior Art] - Chemical mechanical polishing (referred to as φ "CMP") technology was developed to solve the problem of difficulty in focusing on the lithography process due to the difference in coating height during the manufacture of the integrated circuit (1C). A flattening technique came out. The chemical mechanical polishing technology was first applied to the manufacture of 〇.5 Μ米 components. However, as the size of components shrinks, the probability of chemical mechanical polishing technology is increasing, and it has become an indispensable part of the industry. Flattening technology. In the semiconductor wafer process, there are two types of layers to be ground, one type is an interlayer such as yttrium oxide (siHcon 〇xide) and tantalum nitride (φ), and the other type It is a metal circuit (such as tungsten, copper, aluminum, etc.) used to connect the active device. A polishing method generally used for metal wiring (metal generation) is to place a semiconductor wafer on a rotating polishing table provided with a polishing head, and apply a polishing particle on the surface of the wafer. Abrasive particles of abrasive slurry to effectively improve the overall grinding efficiency. In the case of grinding a metal line with an abrasive slurry, it is generally recommended to select the following first mechanism or second mechanism. In the first mechanism, the components of the slurry (usually an additional oxidant are added) will first react with the metal line to form an oxide layer continuously on the metal surface, while the 1305802 mechanically grinds the abrasive particles in the slurry. In the second mechanism, 'the oxidation is not formed as in the first mechanism = the components in the grinding fluid are used to invade and dissolve the metal wire, and the mechanical action of the abrasive particles increases the dissolution speed. Itching _ policy, and 'and then make the metal line factory to m to achieve the purpose of grinding. Due to the problem of uneven grinding in the CMp process, after the application of this process, the wafer is excited, although the metal oxide on the surface of the day will be removed, but some of the metal may be ground and pitted (d —ng), and unwanted metal remains on the wafer surface. Therefore, how to quickly remove metal residues and reduce the depression of metal lines while accelerating productivity is a major problem that must be overcome for the CMP process. There have been many references (4) in the use of the research (iv) liquid to grind the metal layer on the semiconductor wafer. For example, U.S. Patent No. 6,447,563 discloses a slurry system for grinding a metal layer. The first portion and the second portion have a pH between 2 and 11. The first portion comprises a dispersion consisting essentially of an abrasive particle stabilizer and a surfactant, the second portion comprising an accelerator solution (activat 〇 〇 〇 uti 〇 n), the accelerator solution The component containing i is selected from the group consisting of an oxidizing agent, an acid, an amine, a chelating agent, a fluorine-containing compound, a corrosion inhibiting agent, a biological agent ( Bi〇I〇gicaI agent), surfactants, buffers and mixtures thereof. The acid mentioned in the patent includes organic acids such as formic acid, acetic acid, caproic acid, and lactic acid, and inorganic acids such as hydrochloric acid and sulfuric acid. Preferably, an acid having one or more carboxyl groups and substituted with a base such as malic acid, tartaric acid, gluconic aCid, and citric acid can be used. Further, the type of the surfactant may be a nonionic type, an anionic type, a cationic type, and an amphoteric type. In Example 1 of this patent, a slurry system consisting of 4 wt/〇 of fume (j sHica), 1 wt% of hydrogen peroxide, and 1.1 μ of propionic acid was first prepared. The grinding test of the copper beryllium was then carried out using this slurry system. Finally, the removal rate was over 450 nm. The uniformity was less than 5%. The patented slurry system was mainly used to improve the grinding rate. There is no mention of a metal residue problem with respect to a wafer surface. A method for fabricating a metal line contact plug for a semiconductor device is disclosed in US Patent Publication No. 6,864,177, which comprises the following two steps: (1) The first slurry is subjected to the first stage CMP process using the first slurry. The first slurry contains 1 to 20% by weight of abrasive particles, 0.1 to 15% by weight of an oxidizing agent, and 〇·〇ι 10% by weight of a wrong agent. (c〇mplexing agent)' and having a PH range of 2 to 9' has an etching selectivity of more than 10 for a metal/insulating film; (2) a second stage using a second liquid CMP process, the second slurry contains 5~3〇wt% Grinding particles and 0.01 to 5 wt% of oxidizing agent, and having a pH range of 6 to 12, and having an etching selectivity of less than 3 for the metal/insulating film. The complexing agent in the first slurry of this patent is selected from the group consisting of In the group consisting of: citric acid, tartaric acid, suecinic acid, malic acid, maleic acid, fumaric acid, malonic acid ( Malonic acid), ethylenediacetate tetraacetate, giyC〇ijc acid and these salts or mixtures 802 are not included in this patent, no test data is provided, and no interface is mentioned. Active agent and corrosion inhibitor. In the present case, the applicant also obtained a patent on the chemical mechanical polishing composition of the Republic of China patent, namely, the Republic of China Patent Publication No. 574352, which discloses the chemical grinding incineration M product and its use method. The slurry composition is 疋匕3 70 99.5 wt% aqueous medium, 〇1~25~% of abrasive particles 〇.〇1 1 wt/. Corrosion inhibitors, as well as chemicals of 〇〇1~丨w(9). The dried sputum is selected from the group consisting of the following formula: (B) and a combination of the two 'where 'x, γ and z are respectively selected from argon or Cl~C6 alkyl The purpose of this patent is primarily to prevent copper sag, and does not address improvements in polishing rates and copper residue on the wafer surface. Furthermore, the use of surfactants is not mentioned in this patent. (A)

QH 〇H (8) z—g—co2h Since the composition of the chemical mechanical polishing mash affects the polishing rate, the degree of dishing of the metal lines, and the metal residue on the wafer surface, how to effectively lower the film at the same time (4) The degree of depression of gold I (four) and the metal residue on the surface of the wafer, for the current industry, still exist: demand. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a chemical polishing composition which can maintain a good polishing rate while effectively reducing the degree of dishing and metal residue. The local chemical mechanical polishing composition has a pH in the range of 2 to 1,350,802 and comprises a mixture of the following components: aqueous medium, abrasive, a corrosion inhibitor, a surfactant, a compound And a metal residue inhibitor, the metal residue. A group consisting of compounds represented by the following chemical formula: co2h (I) ho2c' ^Y^/C〇2h (11) ho2c, co2h, R〆(III) η 〇2^ wc〇2H R5' K6 R6 > (IV) R8 (V) r10vxa/V 9>-co2h r9 and these - in combination, in the formula (π)~(v), Rl, R2 And R3 and R4 are each selected from the group consisting of hydrogen, Cl~C6 alkyl, c2~c6 alkenyl and C2~C6 alkylidyne, and R5, r6, r7 and r8, r9 And r1 〇 respectively Qin soil wind or Ci ~ C6 burning base. ,to

The acid from the chemical mechanical polishing composition of the present invention reduces the metal residue on the surface of the wafer by adding a metal residue, and the metal residue used has at least a county and is highly reactive with a metal such as copper. Therefore, reducing the metal residue on the surface of the wafer, together with the addition of diacids, surfactants, abrasives and corrosion inhibitors, can maintain a good polishing rate and reduce the degree of dishing. [Embodiment] The chemical mechanical polishing composition of the present invention has a pH range of between 2 and $9 1305802, and the winter _ 3 has a mixture of the following components: a substance, an abrasive, a rot. Intercalation inhibitor, a surfactant, _ compound and a metal residue # ~ acidification residue inhibitor 'The metal residue is inhibited by the following chemical formula + ten children, 丨 ^ w you are selected from Fei Jin Group of compounds: (III)

〇1〇\ΛΝ\

(V) y~C02H and a combination thereof, wherein R1, r2, r3 and r4 are respectively selected from the group consisting of hydrogen, c-c6, C2~ The C6 dilute group and the LA sub-dilute group, and R5, R6, R7 and r8, R9 and R10 are each selected from the group consisting of chlorine or c. The chemical mechanical polishing composition of the present invention can be adjusted according to the subsequent use, preferably, the total weight of the mixture is 100 wt%, and the content of each component is as follows: 0.10~25.00 wt% 〇·01~1.00 wt % 0.01 ~1 .〇〇wt% 0.01 〜1.00 wt% 〇·〇1~1.00 wt% The content of the abrasive: The content of the sterilizing inhibitor: The content of the surfactant: The content of the diacid compound: Content of the metal residual inhibitor 10 1305802 Aqueous medium: The above "remaining content" amount is 100% by weight in total. The remaining content means that the content of the aqueous medium is selectively related to other components, and when the metal residual inhibitor is selected from the formula (1), the formula (Π), the formula or the compound represented by the formula (IV) The preferred content of each component of the mixture in the mixture is as follows:

The content of the abrasive: the content of the sterilizing inhibitor: the content of the surfactant: the content of the diacid compound: the content of the metal residual inhibitor aqueous medium: 0-50-10.00 wt 〇 / 0 0.01 ~ 0.50 Wt0 / 〇 0.01 ~ 〇, 5 〇 wt 〇 / 0 0.05-1.00 wt 〇 / / 〇 0-01-0.50 wt% rest,

Further preferably, the content of each component in the (tetra) compound is as follows: the content of the abrasive is 0-50 to 5_00 Wt%, the content of the corrosion inhibitor is 〇〇ι~wt%, and the content of the surfactant is 〇〇1~〇3() The amount of 3 of the acid-acidified mouth is 0_10~1.00 wt%, the content of the metal residual inhibitor is 0·01~〇_30 wt%', and the remaining content is the aqueous medium. More preferably: When the metal inhibitor is a compound represented by the formula (1), the amount thereof is more preferably from 0.01 to 0.10. Further, when the metal residual inhibitor is represented by the formula (V), the preferred content of each component in the mixture is as follows: The content of the abrasive: 0.50 to 10.00 wt% Content of the agent: 0.01~0.50 wt% The content of the surfactant: 0.01~0.50 wt% 11 1305802 0-05~l.oo wt〇/0 〇·〇5~l.oo wt〇/0 The remaining content, far The content of the diacid compound. The content of the metal residual inhibitor is an aqueous medium: more preferably, the content of each component in the mixture is as follows: the content of the abrasive is 0.50 to 5.00 wt%, and the residual inhibitor is The content is wt. /. The content of the surfactant is G () 1 ~ (four) correction %, the diacidification

The content of the compound is G.1G to 1.GG Wt%, and the content of the metal residual inhibitor is 0.05 to 0.50 wt. /. And the remaining content is the aqueous medium. It should be noted that the grinding rate can be increased by increasing the content of the diacid compound and the abrasive when the polishing rate is less than 3 A/min. When the degree of depression is too high, it can be reduced by increasing the surfactant content. When there is metal residue on the surface of the wafer, the metal residue can be reduced by increasing the residual content of the metal. Preferably, the compound represented by the formula (II) is selected from the group consisting of 2,2-dimethylsuccinic acid, 2-ethyl- 2-ethyl-2-methylsuccinic acid, 2,3-dimethylsuccinic acid, and Itaconic acid or Methylenesuccinic acid. In the specific example of the present invention, the formula (II) is represented by methine succinic acid. The compound represented by the formula (III) may be a cis compound or a trans compound. Preferably, the compound represented by the formula (ΙΠ) is selected from the group consisting of maleic acid, 2-methyl-maleic acid, fumaric acid and 2-methyl-furmaric acid. In one embodiment of the invention, the formula (in) is 12 1305802. It is represented by fumaric acid. Preferably, the compound of the formula (IV) is selected from the group consisting of 2-hydroxy acetic acid or Glycolic acid, 2-mercapto-2-yl group 2-methyl-2-hydroxy acetic acid, 2-ethyl-2-transacetic acid (2-611^1-2-11丫<11'〇f)^3.61^3(^( 1), 2,2-diethyl-2-hydroxy acetic acid and 2-ethyl-2-methyl-2-methylacetic acid (2-ethyl) -2-methyl-2-hydroxy acetic acid). In a specific example of the invention, the formula (IV) is represented by 2-hydroxyacetic acid. Preferably, the compound represented by the formula (V) is selected. From the group consisting of: acrylic acid, 2-methyl acrylic acid, 2-ethyl acrylic acid, 3-mercaptoacrylic acid (3- Methyl acrylic acid) and 2,3-dimethylacrylic acid. In one embodiment of the present invention, the formula (v) is not an acrylic acid. The surfactant of the present invention The product can be selected according to actual needs, and preferably, the surfactant can be Ion type (&^ type 114 type) or nonionic type. The abrasive material in the chemical mechanical polishing composition can be selected from any commercially available product according to actual needs, especially for high purity and high ratio. A commercially available product having the advantages of surface area and narrow particle size distribution. Preferably, the abrasive is selected from the group consisting of cerium oxide (si〇2), aluminum oxide (Al2〇3), and oxidation. Zirconium (Zr〇2), cerium oxide (Ce〇2), tantalum carbide (sic) titanium oxide (Ti〇2), tantalum nitride (8丨3^) and one of these combinations. In a specific example, the abrasive is oxygen cut. 3. The particle size range of the abrasive is 13 Ϊ 305802: adjusted according to actual needs. Preferably, the size range of the abrasive is < 15 nm and 30 nm. The residual inhibitor may be any commercially available product which is conventionally used in the field of semiconductors and which suppresses corrosion. Preferably, the corrosion inhibitor is selected from the group consisting of: Benzotriazole (benz〇iriaz〇le), cyanuric acid (1,3,5-triazine-2,4,6-triol), 1,2,3 - Triazole (ι, 2,3-yl-1,2,4-triazole (3_gamma 0_1,2,4 seven heart 〇16), 4_amino group_3_cultivation base_1,2,4_ Triazolyl-5-thiol (^amino-hhydrazino-n^Mazoi^^ioi, trade name purpaid®), benzotriazole·5_carboxylic acid (benz〇tHaz〇ie_ 5- Carb〇xylic acid), 3_amino-u, 4_triazole-5_carboxylic acid (3'η. -U,4-triaZ〇le_5_Carb〇xylic acid), 1_hydroxybenzotriazole, nitrobenzotriazole (nitr〇benz〇triaz〇ie), and a combination thereof. In one embodiment of the invention, the corrosion inhibitor is benzotriazole. The diacid compound may be selected from a linear and unsubstituted diacid compound generally used for polishing a slurry. Preferably, the diacid compound is selected from the group consisting of succinic acid, adipic acid, The combination of glutaric acid and one of the above 0 is an aqueous medium in the chemical mechanical polishing composition of the present invention, which is mainly used for making the chemical mechanical polishing slurry to be in a slurry form after mixing, and thus can be used by those skilled in the art. Various aqueous media are known. In one embodiment of the invention, the aqueous medium is deionized water. The chemical mechanical polishing composition of the present invention is prepared by mixing the abrasive, the surfactant, the corrosion inhibitor, the diacid compound, the metal residual inhibitor and the aqueous medium at a temperature of 14 1305802. To prepare the mixture, the pH of the mixture is adjusted to between 2 and 5 with an acid or a base. Preferably, the pH is between 3 and 4. The acid or the test for adjusting the pH of the composition is not limited. Preferably, the acid may be hydrochloric acid or nitric acid, and the base may be ammonia water or tetramethylammonium hydroxide (TMAH). "). Preferably, the chemical mechanical polishing composition further comprises an oxidizing agent for the purpose of accelerating oxidation of the metal layer on the surface of the wafer. More preferably, the oxidizing agent is selected from the group consisting of hydrogen peroxide (H2〇2), ferric nitrate (Fe(N〇3)3), potassium edate (potassium iodate) , KI03), acetic hydroperoxide (CH3COOOH), and too (potassium permanganate, KMn04). In one embodiment of the present invention, the oxidizing agent is hydrogen peroxide. The content of the oxidizing agent may be adjusted depending on the actual use. Preferably, the content ratio of the oxidizing agent to the mixture in the chemical mechanical polishing composition is 1:9 to 1:30. In one embodiment of the invention, the ratio of the oxidizing agent to the mixture is 1:11. Preferably, the mixture in the CMP composition is more carboxylic acid, which increases the rate of polishing and more effectively reduces the degree of dishing on the surface of the wafer. The content of the formic acid can be adjusted according to the actual use. Preferably, the total weight of the mixture is 100 wt ° / ,, the content of the abrasive is 0.10 to 25.00 wt%, and the content of the corrosion inhibitor is 0.01-1.00 wt%, 15 1305802 ~ The content of the interface active biocide is 〇_〇1~1.00 wt. /. The content of the diacid compound is 0.01 to 1.00 wt%, and the content of the metal residual inhibitor is 〇·01 i·00 wt% 'the content of the formic acid is 0.01 to 1.00 wt% and the balance is an aqueous medium. The present invention will be further described in the following examples, but it should be understood that the examples are for illustrative purposes only and should not be construed as limiting the implementation of the present invention. . [Chemicals] The following examples and comparative examples were prepared using the following chemicals: (1) Aqueous medium: ionized water. (2) Abrasive material: It is an oxide stone, and the commercial product is called colloidal silica. () Corrosion inhibitor. It is a benzotriazole manufactured by the Precision Machinery Research and Development Center (PMC) of the Taiwanese corporation. (4) Diacid compound: The example used adipic acid, and the comparative example used glutaric acid, which was manufactured by TEDIA Corporation of the United States. (5) Surfactant: an anionic surfactant. (6) Residual inhibitors of genus: According to the following table i, respectively, i.e., i,2,3,4_butanetetracarb〇xylic acid, the following table i will be referred to as "the compound of formula (I)", methine Succinic acid, antibutanic acid, 2' trans-acetic acid and acrylic acid, and these metal residual inhibitors are manufactured by Aldrich, USA. 16 1305802 (7) Oxidizer: Hydrogen peroxide, manufactured by TAIWAN MAXWAVE CO., LTD. (8) Tannin: It is manufactured by Aldrich Company of the United States. [Test] The following examples and comparative examples will be tested and analyzed according to the following conditions and procedures: 1. Test conditions:

(1) Instrument: The grinding machine used was manufactured by APPLIED MATERIALS, INC., model AMAT/Mirra. (2) Instrument settings: membrane pressure 1.0-1.5 psi inner tube exhaust vent retaining ring 1.8 psi platen speed 70 rpm vehicle speed (carrier Speed) 74 rpm

Temperature 25 °C polishing pad pedestal type CUP4410 slurry flow rate 200 mL / min (3) wafer: patterned wafer with copper metal layer, manufactured by Sematech, USA, line width 0.18 Ηηι. 2. Test procedure: The chemical mechanical polishing composition prepared in the following examples and comparative examples was respectively used, and a wafer was ground on the above-mentioned grinding machine, 17 1305802, and the time required for the grinding process was utilized. The attached end point system is used to sense the signal generated after the polished wafer has reached the end point of the grinding [this signal will be used as the end point signal (EP2)] to determine 'after grinding to EP2, then 20% Over-polishing 'and then a cleaning machine (slid state by slid state

Manufactured by Equipment Corporation, nicknamed "Evergreen

Model 1 OX』) performs wafer cleaning and blows the wafer with nitrogen. Finally, the following analysis is performed. 3. Analysis: (1) Grinding rate: The thickness of the copper metal layer after grinding was measured by a KLA-Tencor RS-75 resistivity measurement system manufactured by KLA-TENCOR. . The polishing rate is defined by the thickness of the metal layer (A/min) which is removed in 1 minute, and is preferably in the range acceptable to the industry of 3000 A/min or more. (2) Degree of sag: measured by a Surface Profiler (KLA-Tencor P-11 manufactured by KLA-TENCOR) with a line width of 100 μm copper wire. To measure the point, and measure the relative recession of the copper wire and a barrier layer. In general, the smaller the degree of the depression, the better, and the optimum degree of depression is 〇A /min. (3) Metal residue on the wafer surface: Obtained by the naked eye. [Examples 1 to 9] According to the following Table 1, an interface of 2.00 wt% of abrasive, 0.05 18 1305802 • Wt% of rot resistance, 0.4 wt% of adipic acid, and ο"wt% at room temperature was used. The active agent, the metal residual inhibitor, and the selective addition of formic acid (contents as shown in Table 1) were mixed, and an appropriate amount of aqueous medium was added until the total weight was 1 〇〇 Wt% to prepare a mixture. Then, according to the ratio of the oxidant: mixture = '1:11, the mixture and the oxidant are mixed, and the pH is tested whether it is between 3 and 4. If it is not within the pH range, then hydrochloric acid or ammonia is used. The pH value of 胄 was adjusted to 3 to 4, and finally the chemical mechanical polishing compositions of Examples 1 to 6 were respectively obtained. The chemical mechanical polishing compositions of Examples 1 to 9 were each tested in accordance with the above test and analysis procedures, and the results obtained were separately summarized in Table 1 below.

[Comparative Examples 1 to 4J In the two comparative examples, except that the metal residual inhibitor was not added and other diacid compounds (such as glutaric acid) or oxalic acid (such as formic acid) which are commonly used in the industry were selectively added, The chemical mechanical polishing composition was prepared by the same kind and content of the same kind and content of the abrasive, the corrosion inhibitor and the adipic acid, and the preparation method, and the surfactant content, the diacid compound and other acid species in each comparative example and The change in its content is shown in Table i. The chemical mechanical polishing compositions of Comparative Example 14 were tested according to the above <Testing and Analysis Procedures, respectively, and the results obtained were also separately compiled in - Table 1 below. 19 1305802 Table 1 Diacid content (wt%) Other 酉1/content (wt%) Metal residual inhibitor/content (wt°/〇) Cu polishing rate (A/min) Degree of sag (A/100 μτη Cu line Width) Wafer surface (Α/100μιη Cu line width) Compared with vehicle example 1 醆2醆/0.4 a 4566 784 Total residual ratio car exchange example 2 glutaric acid / 0.1 hexamethylene / 0.4 - - 6044 452 Local residue comparison Example 3 pentanediol / 0.2 adipic acid / 0.4 - 6438 440 Partial residual ratio Example 4 Adipic acid / 0.4 Tannic acid / 0.1 - 6390 416 Partial residue Example 1 Adipic acid / 0.4 Compound of formula (I) / 0.02 4882 468 No residue Example 2 Adipic acid / 0.4 Compound of formula (I) / 0.06 5630 579 No residue Example 3 Hexane / 0.4 _ methine succinic acid / 0.1 5435 418 No residue Example 4 Acid /0.4 - Compound of formula (I) / 0.06 methine succinic acid / 0.1 5745 549 No residue Example 5 Adipic acid / 0.4 Fumaric acid / 0.06 5475 397 No residue Example 6 Adipic acid / 0.4 2-hydroxyacetic acid / 0.05 5127 397 No residue Example 7 Adipic acid / 0.4 - Compound of formula (I) / 0.06 2-hydroxyacetic acid / 0.05 5945 692 No residue Example 8 Acrylic acid /0.4 /0.5 5,294,344 9 Example no residual adipic acid /0.1 /0.4 compound of formula (I) /0.02 6313 426 residue-free a. "-" indicates not added. [Results] 1. Effect of Metal Residual Inhibitor: Comparing Examples 1 to 9 of Table 1 with Comparative Examples 1 to 4, respectively, 20 1305802, it was found that the results of Comparative Examples 1 to 9 were all metal. Residual conditions, when implemented by the use of the metal inhibitor, can make the film enamel without metal residue / is below 700 A, and maintain the grinding car above 4800 A / min, dare to sneak It is obvious that the use of metal residual inhibitors can effectively inhibit metal residue.

Further, from the results of Example i and Example 2, when the content of the compound of the formula (1) is increased, the polishing rate can be effectively increased and the surface of the crystal is free from metal. From the results of Examples 3 and 4, when the metal inhibitor is a combination of the compound of the formula (1) and methine succinic acid, the polishing rate can be increased and the surface of the wafer is free of metal residues. The same results are found in _ 6 and 7. It has thus been confirmed that the metal inhibitor can select the compound of the above formulas (1) to (v) or a combination of such compounds as needed while achieving the purpose of increasing the polishing rate and leaving the wafer surface free of metal residues. Formic acid film Li:

Comparing Example 9 of Table 1 with Example i, it can be found that when adding formic acid, the polishing rate can be effectively increased, and the degree of dishing can be reduced. It is obvious that the addition of formic acid can obtain a good polishing rate and a low degree of dishing. . From the above results, it was confirmed that the chemical mechanical polishing composition of the present invention can be surely lowered at a relatively high polishing rate while reducing the degree of (four) and metal residue. In summary, the chemical mechanical polishing composition of the present invention can effectively reduce the metal residue on the wafer surface due to the inclusion of a metal residual inhibitor. 21 1305802 'Addition of abrasives, surfactants, diacids and corrosion The combination of inhibitors allows the degree of dishing and polishing rate to be maintained within the industry's acceptable range. In addition, when formic acid is added to the chemical mechanical polishing composition, the polishing rate can be further increased while allowing the degree of depression to decrease.

However, the above description is only intended to limit the scope of the invention and the scope of the invention. [Simplified description of the drawings] The preferred embodiment of the present invention is not limited to the equivalent variation and modification of the patent application form according to the present invention. [Main component symbol description] None 22

Claims (1)

1305802 X. Patent application scope: 1 · A chemical mechanical polishing composition having a pH ranging from 2 to <; and comprising - a mixture having the following components: an aqueous medium, - an inhibitor of abrasive rot a surfactant, a surfactant, a diacid compound and a metal residual inhibitor selected from the group consisting of compounds represented by the following chemical formulas: In the formulae (11) to (7), R1, R2, R3 and R4 are each selected from the group consisting of hydrogen, C, -C6 alkyl, c2~c6 alkenyl and C2~C6 fluorenyl , and r5, r6, r7a r8, ri Ri. Divided from hydrogen or CrQ alkyl. 2. The chemical mechanical polishing composition according to the patent application specification, wherein the grinding content is 0.10 to 25.00 wt%, the corrosion inhibitor is calculated based on the total weight of the mixture being 100 wt%. The content of 0.01 1 to 1.00 wt% > ^ r iff, μ Α w interface / tongue agent content is 0.01~1.00 wt%, the content of the diacid compound is 001~100 wt%, and the metal remains. The content of the inhibitor is O.OW. OO wt%, and the remaining content is the chemical mechanical polishing composition according to the scope of the application of the invention, wherein the content of the abrasive is . 5 (two). . 〇 to %. According to the chemical mechanical polishing composition of the third member of the patent application scope, 5 the content of the abrasive is 0.50~5.00 Wt%. • According to the chemical mechanical polishing composition described in the application for patent ribs & 2, the content of the rot money inhibitor is 〇.〇1~〇5〇wt%. ::Application scope The chemical mechanical polishing composition according to Item 5, wherein the content of the corrosion inhibitor is from 0 to 01% to 0.20% by weight. The chemical mechanical polishing composition according to Item 2 of the patent application scope, wherein the content of the surfactant is The chemical mechanical polishing composition according to the seventh aspect of the invention, wherein the content of the surfactant is 0.10 to 0.30 wt%.: The chemical machine according to claim 2 The polishing composition, χ, ,, the content of the diacid compound is 0.05 to 1. oo wt%. 化学 The chemical mechanical polishing composition according to claim 9 of the patent scope, 1 wherein the diacid compound The content of the chemical mechanical polishing composition according to the second aspect of the invention, wherein the metal residual inhibitor is selected from the group consisting of the compounds represented by the following chemical formulas. Group: The formula (1), the formula ( „), in the formula (111) and the formula (IV), the content of the metal residual inhibitor is from 0 〇1 to 〇5(). 12. The chemical mechanical polishing composition according to the invention of claim 5, wherein the content of the metal residual inhibitor is 0.01 to 0.30 wt%. 13_ The chemical mechanical polishing composition according to claim 2, wherein the metal residual inhibitor is a compound represented by the formula (v), and the content thereof is 0.05 to 1.00 wt%. 14. The chemical mechanical polishing composition according to claim 13, wherein the content of the metal residual inhibitor is 〇.〇5 to 〇5〇 wt%. The chemical mechanical polishing composition according to the invention of claim 2, wherein the compound represented by the formula (II) is selected from the group consisting of 2,2-dimercapto Acid, 2-ethyl-2-methylsuccinic acid, 2,3-dimethylsuccinic acid and methine succinic acid. The chemical mechanical polishing composition according to claim 15, wherein the compound represented by the formula (II) is a decyl succinic acid. The chemical mechanical polishing composition according to claim 1, wherein the compound represented by the formula (III) is selected from the group consisting of maleic acid and 2-methyl. Citric acid dibutyric acid, antibutanic acid and 2-methyl-transbutane diacid. 18. The chemical mechanical polishing composition according to claim 17, wherein the compound represented by the formula (III) is maleic acid or fumaric acid. 19. The chemical mechanical polishing composition according to the scope of the patent application, wherein the compound represented by the formula (IV) is selected from the group consisting of 2-glycolic acid, 2_ Methyl-2-p-transacetic acid, 2-ethyl-2-hydric acid, 2,2-diethyl-2-hydroxyacetic acid and 2-ethyl-2-methyl-2-hydroxyacetic acid. 20. The chemical mechanical polishing composition according to claim 19, wherein the compound represented by the formula (IV) is 2-hydroxyacetic acid. The chemical mechanical polishing composition according to the invention of claim 2, wherein the compound represented by the formula (V) is selected from the group consisting of acrylic acid and 2-methacrylic acid. 2_Ethyl acrylate, methacrylic acid, 3-ethylacrylic acid and 2,3-dimethylpropionic acid. The chemical mechanical polishing composition according to claim 21, wherein the compound represented by the formula (V) is acrylic acid. The chemical mechanical polishing composition according to the above-mentioned patent scope, wherein the abrasive is selected from the group consisting of: oxidized stone, oxidized, oxidized, cerium oxide, carbon fossil Xi, titanium oxide, gasification and a combination of these. I. The chemical mechanical polishing composition according to the first aspect of the invention, wherein the inhibitor is selected from the group consisting of the following: · 笨场基-i'2'4- Three saliva, 4_amino group such as sulfhydryl from the heart of 8), benzo: = wow _5 sitky-5-thiol (wave! potential from ugly acid, 3 · amine -1, 2, 4-three saliva-5-slow acid, 9 basic 4 three 0^, Wei stupid and three hearts and these - group of people. 25. According to _ please patent scope 〗 5 straight, the interface, the chemical machinery Grinding composition, 26. _ according to the scope of the patent application "non-ionic active agent. Among them, the diacid compound ' / chemical mechanical polishing composition ' diacid, adipic acid, valeric acid and: consists of Group························································ Composition, 26 1305802 wherein 'the ratio of the oxidizing agent to the mixture is 1: 9 to 丨: 30. 29. According to claim 27 a chemical mechanical polishing composition, wherein 'the oxidizing agent is selected from the group consisting of hydrogen peroxide, iron citrate, potassium iodate, peracetic acid, and potassium permanganate. 30. The chemical mechanical polishing composition described in the item has a pH in the range of 3 to 4. The chemical mechanical polishing composition according to the scope of the application of the patent application, wherein the mixture further has formic acid. 32_ The chemical mechanical polishing composition according to claim 3, wherein the total weight of the mixture is 1% by weight, and the content of the abrasive is 0.10 to 25.00 Wt%, the corrosion inhibition The content of the agent is 〇·〇1 to 1.00 wt% 'The content of the surfactant is 0 01 1 a-<jo wt% 'the content of the 5-dicarboxylic acid compound is 0.01~1·〇〇wt%, the metal The content of the residual inhibitor is 0.01 to 1_00 wt%, and the formic acid human β < 3 is set to 〇. 〇1~1 _ 0 0 wt ° /. And the rest of the content is an aqueous medium. 27