SG11201407029XA - Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate - Google Patents

Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Info

Publication number
SG11201407029XA
SG11201407029XA SG11201407029XA SG11201407029XA SG11201407029XA SG 11201407029X A SG11201407029X A SG 11201407029XA SG 11201407029X A SG11201407029X A SG 11201407029XA SG 11201407029X A SG11201407029X A SG 11201407029XA SG 11201407029X A SG11201407029X A SG 11201407029XA
Authority
SG
Singapore
Prior art keywords
lllll
polishing
substrate
abrasive grains
llll
Prior art date
Application number
SG11201407029XA
Inventor
Tomohiro Iwano
Hisataka Minami
Toshiaki Akutsu
Koji Fujisaki
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG11201407029XA publication Critical patent/SG11201407029XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

(i2) mwu ft iz s-5 iv x m £ titz s issaj n d9) mm IHMMi _ (41) SI5S4>!H B 2013^11 £ 28 0(28.11.2013) W j\"^| PCT (10) WO 2013/175856 A1 (51) H01L 21/304 (2006.01) B24B 37/00 (2012.01) (21) (22) (25) g|@ttii0>Wi§: (26) @(8&M©Wl§: (30) fiBfcftf '— 1 £: 2012-116859 2012 ^ 5 .E 22 0(22.05.2012) JP (71) tiJSIA: 0lIlbJ$^^£tt(HITACHI CHEMICAL COMPANY, LTD.) [JP/JP]; T 1006606 — Tl 9§2-^ Tokyo (JP). (72) Sir £;¥(I\VAN() Tomohiro); T 3178555 0 ililTjflBTEIT 1 @ 3 # 1 Sil'fbjS it K l±_l^ Ibaraki (JP). M Ck ft (MINAMI Hisataka); T 3178555 0 ±L rfT M. WE3 T @ 1 3# 1 0 Ibaraki (JP). |55I#. = )$• ?IJ BJ (AKUTSU Toshiaki); T 3178555 1S|0 — iimicB:eaTg 1 3# 1 oaibjSttagstt = Ibaraki (JP). H llgf f] (FUJISAKI Koji); T ^ 1858601 Tl 280 = #±fe tta$tt0Sgftf + 1*1 = Tokyo (JP). (74) 5? fit, ^(HASEGAWAYoshikiet al.); T 1000005 Kifvlft^FftEEl I*&CD fa — T @ 1 # 1-^*LO>fa MY PLAZA e» 9® Tokyo (JP). (8i) Jt^ia (^ro&i^psy > £-ca>ajia>@faffi IS ^ pj f I): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) *!£H (asrofci^isy > ±T(Dmm(Dfcm% IInlfb): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), n. — V 7 (AM, AZ, BY, KG, KZ, RU, TJ, TM), 3 — • V / ^ (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). C09K 3/14 (2006.01) PCT/JP2013/058782 2013 ^ 3 M 26 0(26.03.2013) 0*IS 0*IS (54) Title: SLURRY, POLISHING-SOLUTION SET, POLISHING SOLUTION, SUBSTRATE POLISHING METHOD, AND SUBSTRATE (54)fg0jco:g^ : 'J — „ EJF!l;$-t? V V , ffigljflu [02] PVA O o oo i> i-H cn i-H o CJ o & o o °o cb;°o o 0 o o o o (57) Abstract: A polishing solution containing abrasive grains, an additive, and water. Said abrasive grains contain a hydroxide of a tetravalent metal, and an aqueous dispersion containing said abrasive grains in the amount of 1.0 mass% exhibits an absorbance of at least 1.00 but less than 1.50 with respect to light having a wavelength of 400 nm. Furthermore, centrifuging the aqueous dispersion containing the abrasive grains in the amount of 1.0 mass% for 50 minutes at a centrifugal acceleration of 1.59 10 x 5 G yields a liquid phase with non-volatile a content of at least 300 ppm. (57)®$: , mm*. a O, 1 • 0H*%lcS6Lf=7k#tfejfclcfc^Ts®:S4 0 0 nmO)3fclcttLT®3fcJt1 • OOJsLtl. 5 0*iS£-5-*3ta>-efcy > R-o, 1 . OH*%lcIH38Lf=7K^«cjft SJS'fciOiiJS 1 . 5 9 x 1 0 Gt-5 5 0 0 p pmJsLta>jfcffl£-5-*. h £ (O T? <fc h •> EJfJS;1£o WO 2013/175856 A11 lllll llllllll II llllll III lllll lllll lllll III III III lllll llll llll lllll lllll lllll lllllll llll llll - (^$^21^(3))
SG11201407029XA 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate SG11201407029XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012116859 2012-05-22
PCT/JP2013/058782 WO2013175856A1 (en) 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Publications (1)

Publication Number Publication Date
SG11201407029XA true SG11201407029XA (en) 2014-12-30

Family

ID=49623560

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407029XA SG11201407029XA (en) 2012-05-22 2013-03-26 Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

Country Status (7)

Country Link
US (1) US9932497B2 (en)
JP (1) JP5943073B2 (en)
KR (1) KR102034331B1 (en)
CN (1) CN104334675B (en)
SG (1) SG11201407029XA (en)
TW (1) TWI576400B (en)
WO (1) WO2013175856A1 (en)

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Also Published As

Publication number Publication date
KR20150014961A (en) 2015-02-09
KR102034331B1 (en) 2019-10-18
US20150140904A1 (en) 2015-05-21
JPWO2013175856A1 (en) 2016-01-12
TWI576400B (en) 2017-04-01
WO2013175856A1 (en) 2013-11-28
JP5943073B2 (en) 2016-06-29
CN104334675B (en) 2016-10-26
US9932497B2 (en) 2018-04-03
TW201402733A (en) 2014-01-16
CN104334675A (en) 2015-02-04

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