JPH10106994A - Cerium oxide abrasive agent and polishing method of substrate - Google Patents

Cerium oxide abrasive agent and polishing method of substrate

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Publication number
JPH10106994A
JPH10106994A JP1437097A JP1437097A JPH10106994A JP H10106994 A JPH10106994 A JP H10106994A JP 1437097 A JP1437097 A JP 1437097A JP 1437097 A JP1437097 A JP 1437097A JP H10106994 A JPH10106994 A JP H10106994A
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cerium oxide
polishing
substrate
slurry
water
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JP1437097A
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Japanese (ja)
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Jun Matsuzawa
Masato Yoshida
誠人 吉田
純 松沢
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Hitachi Chem Co Ltd
日立化成工業株式会社
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Abstract

PROBLEM TO BE SOLVED: To polish the surface of an SiO2 insulating film or the like at a high speed without flaws by a method in which cerium oxide abrasive particle which contains primary cerium oxide powder, whose grain size is prescribed by the observation with a transmission electron microscope, at a prescribed ratio is dispersed into dispersion medium to contain abrasive slurry, and the surface of the insulating film is polished with the above abrasive slurry. SOLUTION: Cerium oxide particle is prepared through a low-temperature burning process so as to be kept low in crystallinity as far as possible, and cerium oxide abrasive particle which contains 90% or above primary particle, whose grain size ranges from 10-100nm by the observation with a transmission electron microscope, is dispersed into medium to obtain abrasive slurry, and the surface of an SiO2 insulating film can be polished at a high speed without flaws by the use of the above abrasive slurry.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、酸化セリウム研磨剤及び基板の研磨法を提供するものである。 The present invention relates, there is provided a polishing method of a cerium oxide abrasive and the substrate.

【0002】 [0002]

【従来の技術】従来、半導体装置の製造工程において、 Conventionally, in a manufacturing process of a semiconductor device,
プラズマ−CVD、低圧−CVD等の方法で形成されるSiO 2絶縁膜等無機絶縁膜層を平坦化するための化学機械研磨剤としてコロイダルシリカ系の研磨剤が一般的に検討されている。 Plasma -CVD, colloidal silica abrasives are generally considered as a chemical mechanical polishing agent for planarizing the SiO 2 insulating film such as an inorganic insulating film layer formed by a method such as low pressure -CVD. コロイダルシリカ系の研磨剤は、シリカ粒子を四塩化珪酸を熱分解する等の方法で粒成長させ、アンモニア等のアルカリ金属を含まないアルカリ溶液でpH調整を行って製造している。 Colloidal silica abrasives, four silicate chloride silica particles are grain growth by a method such as thermal decomposition, it is manufactured by adjusting the pH with an alkaline solution containing no alkali metal such as ammonia. しかしながら、この様な研磨剤は無機絶縁膜の研磨速度が充分な速度を持たず、実用化には低研磨速度という技術課題がある。 However, such abrasive polishing rate of the inorganic insulating film can not have sufficient speed, the practical application there is technical problem of low polishing rate.

【0003】一方、フォトマスク用ガラス表面研磨として、酸化セリウム研磨剤が用いられている。 On the other hand, as a glass surface polishing for photomasks, cerium oxide abrasive has been used. 酸化セリウム粒子はシリカ粒子やアルミナ粒子に比べ硬度が低く、 Cerium oxide particles have low hardness as compared to silica particles and alumina particles,
したがって研磨表面に傷が入りにくいことから仕上げ鏡面研磨に有用である。 Therefore useful to mirror finish polishing from the fact that the polishing surface difficult to enter the wound. また、酸化セリウムは強い酸化剤として知られるように化学的活性な性質を有している。 Also, cerium oxide has a chemically active nature, known as a strong oxidizing agent.
この利点を活かし、絶縁膜用化学機械研磨剤への適用が有用である。 Utilizing this advantage, it is useful application to insulation films for chemical mechanical polishing agent. しかしながら、フォトマスク用ガラス表面研磨用酸化セリウム研磨剤をそのまま無機絶縁膜研磨に適用すると、1次粒子径が大きく、そのため絶縁膜表面に目視で観察できる研磨傷が入ってしまう。 However, when applied to intact inorganic insulating film polishing the glass surface polishing cerium oxide abrasive for photomasks, a primary particle diameter is large, therefore it will contain scratches that can be visually observed on the surface of the insulating film.

【0004】 [0004]

【発明が解決しようとする課題】本発明は、SiO 2絶縁膜等の被研磨面を傷なく高速に研磨することが可能な酸化セリウム研磨剤及び基板の研磨法を提供するものである。 [0008] The present invention provides a cerium oxide abrasive that can polish a surface to be polished such as SiO 2 insulating film is wound without fast and polishing of the substrate.

【0005】 [0005]

【課題を解決するための手段】本発明の酸化セリウム研磨剤は、透過型電子顕微鏡による観察で粒子径が10n Cerium oxide abrasive of the present invention According to an aspect of the, 10n particle size as observed by a transmission electron microscope
mを超えかつ100nm未満である1次粒子が全数の9 Exceed m and less than 100 nm 9 1 primary particles of the total number
0%以上である酸化セリウム粒子を媒体に分散させたスラリーを含むものである。 The cerium oxide particles is 0% or more is intended to include a slurry dispersed in the medium.

【0006】本発明の基板の研磨法は、上記の酸化セリウム研磨剤で所定の基板を研磨することを特徴とするものである。 [0006] polishing method of the substrate of the present invention is characterized in that for polishing a given substrate with the above cerium oxide abrasive.

【0007】本発明は、透過型電子顕微鏡による観察で粒子径が10nmを超えかつ100nm未満である1次粒子が全数の90%以上である酸化セリウム粒子を使用することにより、SiO 2絶縁膜等の被研磨面に傷をつけることなくかつ、高速に研磨できることを見い出したことによりなされたものである。 [0007] The present invention, by the primary particle diameter from observation by transmission electron microscope is less than exceed 10nm and 100nm uses cerium oxide particles is at least 90% of the total number, SiO 2 insulating film, etc. and without damaging the polished surface of which was made by it has been found that can be polished at high speed.

【0008】 [0008]

【発明の実施の形態】一般に酸化セリウムは、炭酸塩、 In general the cerium oxide DETAILED DESCRIPTION OF THE INVENTION, carbonates,
硫酸塩、蓚酸塩等のセリウム化合物を焼成することによって得られる。 Sulfates, obtained by firing cerium compound such as oxalate. TEOS−CVD法等で形成されるSi Si formed by TEOS-CVD method or the like
2絶縁膜は1次粒子径が大きく、かつ結晶歪が少ないほど、すなわち結晶性がよいほど高速研磨が可能であるが、研磨傷が入りやすい傾向がある。 O 2 insulating film primary particle size is large and higher crystallinity little distortion, that is, as the crystallinity is good which enables high-speed polishing, there is a tendency that contains the polishing scratches. そこで、本発明で用いる酸化セリウム粒子は、あまり結晶性を上げないで作製される。 Therefore, the cerium oxide particles used in the present invention are produced without increasing too much crystallinity. また、半導体チップ研磨に使用することから、アルカリ金属およびハロゲン類の含有率は1ppm Further, from the use in the semiconductor chip polishing, the content of alkali metal and halogens 1ppm
以下に抑えることが好ましい。 It is preferable to keep below.

【0009】本発明において、酸化セリウム粒子を作製する方法として焼成法が使用できる。 [0009] In the present invention, the firing method can be used as a method for producing a cerium oxide particles. ただし、研磨傷が入らない粒子を作製するためにできるだけ結晶性を上げない低温焼成が好ましい。 However, low-temperature firing is preferred that as little as possible to increase the crystallinity to prepare particles which scratches does not turn. セリウム化合物の酸化温度が300℃であることから、焼成温度は500℃以上70 Since the oxidation temperature of the cerium compound is 300 ° C., the firing temperature is 500 ° C. or higher 70
0℃以下が好ましい。 0 ℃ or less.

【0010】本発明における酸化セリウムスラリーは、 [0010] The cerium oxide slurry of the present invention,
上記の方法により製造された酸化セリウム粒子を含有する水溶液又はこの水溶液から回収した酸化セリウム粒子、水及び必要に応じて分散剤らなる組成物を分散させることによって得られる。 Aqueous solution or recovered cerium oxide particles from the aqueous solution containing the cerium oxide particles prepared by the above method, is obtained by dispersing the dispersing agent et consisting composition with water and optionally. ここで、酸化セリウム粒子の濃度には制限は無いが、懸濁液の取り扱い易さから0. Here, there is no limitation on the concentration of the cerium oxide particles, 0 to easy handling of the suspension.
5〜10重量%の範囲が好ましい。 Preferably in the range of 5 to 10 wt%. また分散剤としては、金属イオン類を含まないものとして、アクリル酸重合体及びそのアンモニウム塩、メタクリル酸重合体及びそのアンモニウム塩、ポリビニルアルコール等の水溶性有機高分子類、ラウリル硫酸アンモニウム、ポリオキシエチレンラウリルエーテル硫酸アンモニウム等の水溶性陰イオン性界面活性剤、ポリオキシエチレンラウリルエーテル、ポリエチレングリコールモノステアレート等の水溶性非イオン性界面活性剤、モノエタノールアミン、 As the dispersing agent, as containing no metal ions, acrylic acid polymer and its ammonium salt, methacrylic acid polymer and its ammonium salts, water-soluble organic polymer such as polyvinyl alcohol, ammonium lauryl sulfate, polyoxyethylene water-soluble anionic surfactants such as ammonium lauryl ether sulfate, polyoxyethylene lauryl ether, water-soluble, non-ionic surfactants such as polyethylene glycol monostearate, monoethanolamine,
ジエタノールアミン等の水溶性アミン類などが挙げられる。 Water-soluble amines such as diethanolamine and the like. これらの分散剤の添加量は、スラリー中の粒子の分散性及び沈降防止性などから酸化セリウム粒子100重量部に対して0.01重量部から5重量部の範囲が好ましく、その分散効果を高めるためには分散処理時に分散機の中に粒子と同時に入れることが好ましい。 The amount of the dispersant is preferably in the range of 5 parts by weight 0.01 parts by weight per 100 parts by weight of cerium oxide particles from the dispersibility and anti-settling properties of the particles in the slurry, increasing the dispersion effect putting at the same time as the particles in a dispersing machine during dispersion treatment for preferred.

【0011】これらの酸化セリウム粒子を水中に分散させる方法としては、通常の撹拌機による分散処理の他に、ホモジナイザー、超音波分散機、ボールミルなどを用いることができる。 [0011] As a method of dispersing these cerium oxide particles in water, in addition to the dispersion treatment by conventional agitator, it can be used a homogenizer, an ultrasonic dispersing machine, a ball mill and the like. 特に酸化セリウム粒子を1μm以下の微粒子として分散させるためには、ボールミル、振動ボールミル、遊星ボールミル、媒体撹拌式ミルなどの湿式分散機を用いることが好ましい。 To particularly dispersing the cerium oxide particles as the following fine 1μm are a ball mill, a vibrating ball mill, planetary ball mill, the use of wet dispersing machine such as a medium agitation mill preferably. また、スラリーのアルカリ性を高めたい場合には、分散処理時又は処理後にアンモニア水などの金属イオンを含まないアルカリ性物質を添加することができる。 Also, if desired to increase the alkalinity of the slurry may be added an alkaline substance containing no metal ions, such as ammonia water after the dispersing treatment time or treatment.

【0012】本発明の酸化セリウム研磨剤は、上記スラリ−をそのまま使用してもよいが、N,N−ジエチルエタノ−ルアミン、N,N−ジメチルエタノ−ルアミン、 [0012] The cerium oxide abrasive of the present invention, the slurry - but the may be used as it is, N, N-Jiechiruetano - triethanolamine, N, N-Jimechiruetano - triethanolamine,
アミノエチルエタノ−ルアミン等の添加剤を添加して研磨剤とすることができる。 It can be polished with the addition of additives such as triethanolamine - aminoethyl ethanolate.

【0013】本発明の酸化セリウム研磨剤が使用される無機絶縁膜の作製方法として、定圧CVD法、プラズマCVD法等が挙げられる。 [0013] As a manufacturing method of the inorganic insulating film cerium oxide abrasive is used in the present invention, the constant pressure CVD method, a plasma CVD method. 定圧CVD法によるSiO 2 SiO by the constant pressure CVD method 2
絶縁膜形成は、Si源としてモノシラン:SiH 4 、酸素源として酸素:O 2を用いる。 Insulating film formation, monosilane Si source: SiH 4, oxygen as an oxygen source: the O 2 is used. このSiH 4 −O 2系酸化反応を400℃程度以下の低温で行わせることにより得られる。 The SiH 4 -O 2 system oxidation reaction can be obtained by performed at low temperatures below about 400 ° C.. 高温リフローによる表面平坦化を図るためにリン:Pをドープするときには、SiH 4 −O 2 −PH 3 Phosphorus in order to surface planarization by a high temperature reflow: when doped with P is, SiH 4 -O 2 -PH 3
系反応ガスを用いることが好ましい。 It is preferable to use a system reaction gas. プラズマCVD法は、通常の熱平衡下では高温を必要とする化学反応が低温でできる利点を有する。 Plasma CVD, under normal thermal equilibrium has the advantage that chemical reactions requiring high temperatures can be at a low temperature. プラズマ発生法には、容量結合型と誘導結合型の2つが挙げられる。 The plasma generation method, two of inductively coupled and capacitively coupled like. 反応ガスとしては、Si源としてSiH 4 、酸素源としてN 2 Oを用いたSiH 4 −N 2 O系ガスとテトラエトキシシラン(TEO The reaction gases, SiH 4, SiH 4 -N 2 O -based gas and tetraethoxysilane using N 2 O as an oxygen source as Si source (TEO
S)をSi源に用いたTEOS−O 2系ガス(TEOS TEOS-O 2 based gas using the S) to the Si source (TEOS
−プラズマCVD法)が挙げられる。 - plasma CVD method). 基板温度は250 The substrate temperature is 250
℃〜400℃、反応圧力は67〜400Paの範囲が好ましい。 ° C. to 400 ° C., a reaction pressure in the range of 67~400Pa is preferred. このように、本発明のSiO 2絶縁膜にはリン、ホウ素等の元素がド−プされていても良い。 Thus, the SiO 2 insulating film of the present invention is phosphorus, elemental boron, and the like de - may be up.

【0014】所定の基板として、半導体基板すなわち回路素子と配線パターンが形成された段階の半導体基板、 [0014] predetermined substrate, a semiconductor substrate or circuit elements and steps of the semiconductor substrate on which a wiring pattern is formed,
回路素子が形成された段階の半導体基板等の半導体基板上にSiO 2絶縁膜層が形成された基板が使用できる。 Substrate SiO 2 insulating film layer formed on a semiconductor substrate of a semiconductor substrate such as a stage of the circuit elements are formed can be used.
このような半導体基板上に形成されたSiO 2絶縁膜層を上記酸化セリウム研磨剤で研磨することによって、S The SiO 2 insulating film layer formed on such a semiconductor substrate by polishing with cerium oxide abrasive, S
iO 2絶縁膜層表面の凹凸を解消し、半導体基板全面に渡って平滑な面とする。 to eliminate the unevenness of iO 2 insulating film layer surface to a smooth surface over the entire surface of the semiconductor substrate. ここで、研磨する装置としては、半導体基板を保持するホルダーと研磨布(パッド) Here, the polished device, the holder and the polishing pad for holding the semiconductor substrate (pads)
を貼り付けた(回転数が変更可能なモータ等を取り付けてある)定盤を有する一般的な研磨装置が使用できる。 General polishing apparatus having a pasted (rpm is attached a changeable motor or the like) surface plate can be used.
研磨布としては、一般的な不織布、発泡ポリウレタン、 As the polishing cloth, a general non-woven fabric, polyurethane foam,
多孔質フッ素樹脂などが使用でき、特に制限がない。 A porous fluororesin can be used, there is no particular limitation. また、研磨布にはスラリーが溜まる様な溝加工を施すことが好ましい。 Further, it is preferably subjected to such grooves slurry accumulates in the polishing cloth. 研磨条件には制限はないが、定盤の回転速度は半導体が飛び出さない様に100rpm以下の低回転が好ましく、半導体基板にかける圧力は研磨後に傷が発生しない様に1kg/cm 2以下が好ましい。 Although there is no limitation on the polishing conditions, the rotational speed of the platen 100rpm or lower rotational preferably so that no semiconductor protrude, pressure applied to the semiconductor substrate is a 1 kg / cm 2 or less as scratches is not generated after polishing preferable. 研磨している間、研磨布にはスラリーをポンプ等で連続的に供給する。 During polishing, continuously supplying a slurry pump or the like to the polishing cloth. この供給量には制限はないが、研磨布の表面が常にスラリーで覆われていることが好ましい。 Is not limited to this supply amount, it is preferred that the surface of the polishing cloth is constantly covered with the slurry.

【0015】研磨終了後の半導体基板は、流水中で良く洗浄後、スピンドライヤ等を用いて半導体基板上に付着した水滴を払い落としてから乾燥させることが好ましい。 The semiconductor substrate after polishing is washed well in running water, it and then dried by removing the water droplets on the semiconductor substrate by using a spin dryer or the like. このようにして平坦化されたSiO 2絶縁膜層の上に、第2層目のアルミニウム配線を形成し、その配線間および配線上に再度上記方法によりSiO 2絶縁膜を形成後、上記酸化セリウム研磨剤を用いて研磨することによって、絶縁膜表面の凹凸を解消し、半導体基板全面に渡って平滑な面とする。 On this way, the SiO 2 insulating film layer which is flattened, forming an aluminum wiring of the second layer, after forming the SiO 2 insulating film again by the above method on the inter-wiring and the wiring, the cerium oxide by polishing with a polishing agent, to eliminate the unevenness of the insulating film surface, and smooth surface over the entire surface of the semiconductor substrate. この工程を所定数繰り返すことにより、所望の層数の半導体を製造する。 By repeating this process a predetermined number to produce the desired number of layers of the semiconductor.

【0016】本発明の酸化セリウム研磨剤は、半導体基板に形成されたSiO 2絶縁膜だけでなく、所定の配線を有する配線板に形成されたSiO 2絶縁膜、ガラス、 [0016] The cerium oxide abrasive of the present invention not only SiO 2 insulating film formed on a semiconductor substrate, SiO 2 insulating film formed on the wiring board having a predetermined wiring, glass,
窒化ケイ素等の無機絶縁膜、フォトマスク・レンズ・プリズムなどの光学ガラス、ITO等の無機導電膜、ガラス及び結晶質材料で構成される光集積回路・光スイッチング素子・光導波路、光ファイバ−の端面、シンチレ− Inorganic insulating films such as silicon nitride, an optical glass such as photomasks, lenses and prisms, inorganic conductive films such as ITO, and optical integrated circuits, optical switching devices, optical waveguides in glass and crystalline materials, an optical fiber - of end face, scintillator -
タ等の光学用単結晶、固体レ−ザ単結晶、青色レ−ザL Optical single crystals such as motor, solid Le - The single-crystal, blue Le - The L
ED用サファイア基板、SiC、GaP、GaAS等の半導体単結晶、磁気ディスク用ガラス基板、磁気ヘッド等を研磨するために使用される。 Sapphire substrates for ED, SiC, GaP, semiconductor single crystal such as GaAS, magnetic disk glass substrate, is used to polish the magnetic head and the like. このように本発明において所定の基板とは、SiO 2絶縁膜が形成された半導体基板、SiO 2絶縁膜が形成された配線板、ガラス、 Thus the predetermined substrate in the present invention, a semiconductor substrate which SiO 2 insulating film is formed, SiO 2 wiring board on which an insulating film is formed, glass,
窒化ケイ素等の無機絶縁膜が形成された基板、フォトマスク・レンズ・プリズムなどの光学ガラス、ITO等の無機導電膜、ガラス及び結晶質材料で構成される光集積回路・光スイッチング素子・光導波路、光ファイバ−の端面、シンチレ−タ等の光学用単結晶、固体レ−ザ単結晶、青色レ−ザLED用サファイア基板、SiC、Ga Substrate an inorganic insulating film such as silicon nitride is formed, an optical glass such as photomasks, lenses and prisms, inorganic conductive films such as ITO, a glass and a light integrated circuit, an optical switching element, optical waveguide in crystalline material , optical fiber - the end faces of scintillator - optical single crystals such as motor, solid Le - the single-crystal, blue Le - the LED sapphire substrate, SiC, Ga
P、GaAS等の半導体単結晶、磁気ディスク用ガラス基板、磁気ヘッド等を含む。 Including P, semiconductor single crystal such as GaAS, a glass substrate for a magnetic disk, a magnetic head or the like.

【0017】 [0017]

【実施例】 【Example】

(酸化セリウム粒子の作製)炭酸セリウム水和物(9 (Preparation of cerium oxide particles) cerium carbonate hydrate (9
9.9%)600gを白金製の容器に入れ、600℃で2時間空気中で焼成することにより黄白色の粉末を得た。 The 9.9%) 600 g was placed in a platinum vessel, to obtain a white powder by calcining in air for two hours at 600 ° C.. この粉末をX線回折法で相同定を行ったところ酸化セリウムであることを確認した。 This powder was confirmed to be cerium oxide was subjected to phase identification by X-ray diffraction method. さらに透過型電子顕微鏡による観察で粒子が10nmを超えかつ100nm未満の1次粒子が全数の90%以上であることも確認した。 Furthermore the primary particles of less than a transmission electron microscope by particle observation exceeds 10nm and 100nm were also confirmed that at least 90% of the total number.

【0018】(酸化セリウムスラリーの作製)上記の酸化セリウム粉末80gを脱イオン水800g中に分散して、これにポリアクリル酸アンモニウム塩8gを添加後、遊星ボールミル(フリッチェ社製、商品名P−5 The dispersed cerium oxide powder 80g of the above (Preparation of Cerium Oxide slurry) of deionized water 800 g, which after addition of ammonium polyacrylate 8 g, a planetary ball mill (Fritsch trade name P- 5
型)を用いて2300rpmで30分間分散処理を施すことにより、乳白色の酸化セリウムスラリーを得た。 By performing 30 minutes dispersion treatment at 2300rpm with a mold), to obtain a milky white cerium oxide slurries. このスラリーpHは9.2であった。 The slurry pH was 9.2. スラリーの粒度分布を調べたところ(Master Sizer製)、平均粒子径が260nmと小さく、その半値幅も300nm Examination of the particle size distribution of the slurry (manufactured by Master Sizer), average particle diameter as small as 260 nm, 300 nm also a half-value width
と比較的分布も狭いことがわかった。 And it was found to narrow it is also relatively distribution.

【0019】(絶縁膜層の研磨)保持する基板取り付け用の吸着パッドを貼り付けたホルダーにTEOS−プラズマCVD法で作製したSiO 2絶縁膜を形成させたS [0019] S obtained by forming an SiO 2 insulating film produced by holder TEOS- plasma CVD paste suction pads for board mounting for holding (Polishing of insulating film layer)
iウエハをセットし、多孔質ウレタン樹脂製の研磨パッドを貼り付けた定盤上に絶縁膜面を下にしてホルダーを載せ、さらに加工加重が160g/cm 2になるように重しを載せた。 sets i wafer, placed on the holder the platen in the insulating film surface was adhered to a polishing pad made porous urethane resin in the lower, further processing weights was placed a weight to be 160 g / cm 2 . 定盤上に上記の酸化セリウムスラリー(固形分:2.5wt%)を35cc/minの速度で滴下しながら、定盤を30rpmで3分間回転させ、絶縁膜を研磨した。 The above cerium oxide slurry (solid content: 2.5 wt%) to the surface plate while was added dropwise at a rate of 35 cc / min, was rotated for 3 minutes platen at 30 rpm, and polishing an insulating film. 研磨後ウエハをホルダーから取り外して、流水で良く洗浄後、超音波洗浄機によりさらに20 Remove the post-polishing wafer from the holder, washed well with water, further using an ultrasonic washing machine 20
分間洗浄した。 It washed minutes. 洗浄後、ウエハをスピンドライヤーで水滴を除去し、120℃の乾燥機で10分間乾燥させた。 After washing, the wafer was removed water droplets in a spin drier and dried for 10 minutes at a 120 ° C. oven.
光干渉式膜厚測定装置を用いて、研磨前後の膜厚変化を測定した結果、この研磨により240nmの絶縁膜が削られ、ウエハ全面に渡って均一の厚みになっていることがわかった。 Using an optical interference type film thickness measuring device and the measurement results of the film thickness change before and after polishing, the insulating film of 240nm by the polishing is cut, it was found that over the entire wafer surface are uniform in thickness. また、目視では絶縁膜表面には傷が見られなかった。 Further, in the visual inspection showed no scratches on the surface of the insulating film.

【0020】比較例 実施例と同様にTEOS−CVD法で作製したSiO 2 [0020] SiO 2 prepared in TEOS-CVD method in the same manner as Comparative Example Example
絶縁膜を形成させたSiウエハについて、市販シリカスラリー(キャボット社製、商品名SS225)を用いて研磨を行った。 For Si wafer obtained by forming an insulating film, it was polished using a commercially available silica slurry (manufactured by Cabot Corporation, trade name SS225). この市販スラリーのpHは10.3で、 The pH of the commercial slurry at 10.3,
SiO 2粒子を12.5wt%含んでいるものである。 Those containing 12.5 wt% of SiO 2 particles.
研磨条件は実施例と同一である。 Polishing conditions were the same as in Example. その結果、研磨による傷は見られず、また均一に研磨がなされたが、3分間の研磨により75nmの絶縁膜層しか削れなかった。 As a result, scratches caused by polishing was not observed, Although uniformly polished were made, was shaved only the insulating film layer of 75nm by polishing 3 minutes.

【0021】 [0021]

【発明の効果】本発明の研磨剤により、SiO 2絶縁膜等の被研磨面を傷なく高速に研磨することが可能となる。 The polishing agent of the present invention according to the present invention, it is possible to polish the surface to be polished such as SiO 2 insulating film is wound without a high speed.

Claims (7)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 透過型電子顕微鏡による観察で粒子径が10nmを超えかつ100nm未満である1次粒子が全数の90%以上である酸化セリウム粒子を媒体に分散させたスラリーを含む酸化セリウム研磨剤。 1. A transmission type particle size as observed by electron microscopy exceeds 10nm and cerium oxide polishing slurry containing primary particles a slurry dispersed in the medium cerium oxide particles is at least 90% of the total number is less than 100nm .
  2. 【請求項2】 スラリーが分散剤を含む請求項1記載の酸化セリウム研磨剤。 2. A cerium oxide abrasive according to claim 1 containing slurry dispersant.
  3. 【請求項3】 媒体が水である請求項1又は2記載の酸化セリウム研磨剤。 3. A cerium oxide abrasive according to claim 1 or 2, wherein the medium is water.
  4. 【請求項4】 分散剤が水溶性有機高分子、水溶性陰イオン性界面活性剤、水溶性非イオン性界面活性剤及び水溶性アミンから選ばれる少なくとも1種である請求項2 4. A dispersing agent is a water-soluble organic polymer, water-soluble anionic surfactant, claim is at least one selected from water-soluble nonionic surfactant and a water-soluble amine 2
    記載の酸化セリウム研磨剤。 Cerium oxide abrasive described.
  5. 【請求項5】 スラリーのpHが7以上10以下のスラリーである請求項1〜4各項記載の酸化セリウム研磨剤。 5. A cerium oxide abrasive according to claim 1 to 4 sections, wherein a 10 or less of the slurry pH of 7 or more of the slurry.
  6. 【請求項6】 請求項1〜5各項記載の酸化セリウム研磨剤で所定の基板を研磨することを特徴とする基板の研磨法。 6. A method of polishing a substrate, which comprises polishing a predetermined substrate cerium oxide abrasive according to claim 1 to 5 sections, wherein.
  7. 【請求項7】 所定の基板がSiO 2絶縁膜が形成された基板である請求項6記載の基板の研磨法。 7. A method of polishing a substrate according to claim 6, wherein the predetermined substrate is a substrate which SiO 2 insulating film is formed.
JP1437097A 1997-01-28 1997-01-28 Cerium oxide abrasive agent and polishing method of substrate Pending JPH10106994A (en)

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US6863700B2 (en) 1996-09-30 2005-03-08 Hitachi Chemical Company, Ltd. Cerium oxide abrasive and method of polishing substrates
WO2006035771A1 (en) * 2004-09-27 2006-04-06 Hitachi Chemical Co., Ltd. Cmp polishing agent and method for polishing substrate
WO2008032794A1 (en) 2006-09-15 2008-03-20 Hitachi Chemical Co., Ltd. Cmp polishing agent, additive solution for cmp polishing agent, and method for polishing substrate by using the polishing agent and the additive solution
WO2011058816A1 (en) 2009-11-12 2011-05-19 日立化成工業株式会社 Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
US8075800B2 (en) 2003-05-28 2011-12-13 Hitachi Chemical Co., Ltd. Polishing slurry and polishing method
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US8591612B2 (en) 2005-10-19 2013-11-26 Hitachi Chemical Co., Ltd. Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same
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US8900335B2 (en) 2004-09-28 2014-12-02 Hitachi Chemical Company, Ltd. CMP polishing slurry and method of polishing substrate
US9039796B2 (en) 2010-11-22 2015-05-26 Hitachi Chemical Company, Ltd. Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
US9163162B2 (en) 2012-08-30 2015-10-20 Hitachi Chemical Company, Ltd. Polishing agent, polishing agent set and method for polishing base
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US6863700B2 (en) 1996-09-30 2005-03-08 Hitachi Chemical Company, Ltd. Cerium oxide abrasive and method of polishing substrates
US7708788B2 (en) 1996-09-30 2010-05-04 Hitachi Chemical Co, Ltd. Cerium oxide abrasive and method of polishing substrates
US7867303B2 (en) 1996-09-30 2011-01-11 Hitachi Chemical Co., Ltd. Cerium oxide abrasive and method of polishing substrates
US8075800B2 (en) 2003-05-28 2011-12-13 Hitachi Chemical Co., Ltd. Polishing slurry and polishing method
US9293344B2 (en) 2004-07-23 2016-03-22 Hitachi Chemical Company, Ltd. Cmp polishing slurry and method of polishing substrate
WO2006035771A1 (en) * 2004-09-27 2006-04-06 Hitachi Chemical Co., Ltd. Cmp polishing agent and method for polishing substrate
KR100849551B1 (en) * 2004-09-27 2008-07-31 히다치 가세고교 가부시끼가이샤 Cmp polishing agent and method for polishing substrate
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EP2410558A2 (en) 2005-11-11 2012-01-25 Hitachi Chemical Co., Ltd. Polishing slurry for silicon oxide, additive liquid and polishing method
JP4872919B2 (en) * 2005-11-11 2012-02-08 日立化成工業株式会社 Silicon oxide polishing agent, the additive liquid and a polishing method
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US9165777B2 (en) 2008-04-23 2015-10-20 Hitachi Chemical Company, Ltd. Polishing agent and method for polishing substrate using the polishing agent
US10040971B2 (en) 2008-04-23 2018-08-07 Hitachi Chemical Company, Ltd. Polishing agent and method for polishing substrate using the polishing agent
US8728341B2 (en) 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
WO2011058816A1 (en) 2009-11-12 2011-05-19 日立化成工業株式会社 Chemical-mechanical polishing liquid, and semiconductor substrate manufacturing method and polishing method using said polishing liquid
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US9564337B2 (en) 2010-12-24 2017-02-07 Hitachi Chemical Co., Ltd. Polishing liquid and method for polishing substrate using the polishing liquid
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