SG11201402456PA - Method for preparing liquid chemical for forming water-repellent protective film - Google Patents

Method for preparing liquid chemical for forming water-repellent protective film

Info

Publication number
SG11201402456PA
SG11201402456PA SG11201402456PA SG11201402456PA SG11201402456PA SG 11201402456P A SG11201402456P A SG 11201402456PA SG 11201402456P A SG11201402456P A SG 11201402456PA SG 11201402456P A SG11201402456P A SG 11201402456PA SG 11201402456P A SG11201402456P A SG 11201402456PA
Authority
SG
Singapore
Prior art keywords
lllll
solvent
forming
yamaguchi
protective membrane
Prior art date
Application number
SG11201402456PA
Inventor
Atsushi Ryokawa
Shuhei Yamada
Masahiro Fujitani
Soichi Kumon
Masanori Saito
Takashi Saio
Shinobu Arata
Yosuke Hashimoto
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of SG11201402456PA publication Critical patent/SG11201402456PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/373—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

(i2) mwu ft iz s-5 iv x m £ titz s issaj n d9) mm IHMMi _ (43) 2013 ^6^ 6 0 (06.06.2013) I P O I P C T (10) WO 2013/080822 A1 (51) H01L 21/304 (2006.01) (21) PCT/JP2012/079902 (22) 2012^11^ 19 0(19.11.2012) (25) g|@ttii0>Wi§: B*Wi (26) @(8&M©Wl§: 0*f§ (30) fiBfcftf '— 1 £: 2011-261011 2011 ^ 11 ^ 29 0(29.11.2011) JP ^Ji® 2012-237503 2012 ^ 10 ^ 29 0(29.10.2012) JP (71) Hi M A : \"tr > h ^ |±_(CENTRAL GLASS COMPANY, LIMITED) [JP/JP]; T 7550001 Uj • 2 5 3#±fc Yamaguchi (JP). (72) [SSJII §t(RYOKAWA, Atsushi); T 7550001 LU • 5 5 2 3 #±fe -fe > h \"7 Jl' 5B -f ^ TC 35 tt 1b ^ 5Jf ^ PJT Yamaguchi (JP). LJUH J1¥(YAMADA, Shuhei); T 7550001 Uj = Pl?OTX?m5 2 5_3Stt -tr>h^ 3^1 Ib^SFfttfr 1*1 yamaguchi (JP). = H3A(FUJITANI, Masahiro); T 7550001 Uj • = IW^?SP5 2 5 3Stt t>h7^ 5^33^1 Yamaguchi (JP). 4A flj —(KUMON, Soichi); T 5150001 HElftl&IK — m*amn 5 1 o -tr> = fig ^ EJF PJT fa Mie (JP). If H *£| (SAITO, Mas- anori); T5150001 = SfcTfT^ P ffl]\" 1 5 1 0 -tr> Mie (JP). StJl ^(SAIO, Takashi); T5150001 = BRrtr^pprrj 5 1 o -t?> h^fig^^a fig ^ 5Jf F/T fa Mie (JP). JTL E9 /\"S (ARATA, Shinobu); T 5150001 -SRtelKrfi^P par 1 5 1 0 -tr> h^Hfl^ttaSSsa Mie (JP). (HASHIMOTO, Yosuke); T 7550001 LUP»^m^^^^5 2 5 3#±fe \"tr> h \"7 s^a Ib^Sjf 3?CF/T fa Yamaguchi (JP). (74) ftIIA: 'M* tf®, ^(KOBAYASHI, Hiromichi etal.); T 1040044 £l* BJ 5 EST 1f29^ s H i G Afama^MFjifa Tokyo (JP). (8i) (^ro&i^PBy, IS ft nJ f b): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) *!£H (asrofci^isy > ±T(Dmm(Dfcm% 11^ nlfb): ARIPO (BW, GM, KE, GH, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), -3- — =y v mmta (54) Title: METHOD FOR PREPARING CHEMICAL FOR FORMING PROTECTIVE MEMBRANE (54) fgBJCD^fft : [HI] ^ iii©sis*& AA... FIRST PREPARATION METHOD BB... FIRST REFINEMENT STEP (SOLVENT REFINEMENT) CC... MIXING STEP (MIXING SOLVENT AND AGENT FOR FORMING WATER-REPELLANT PROTECTIVE MEMBRANE) DD... SECOND REFINEMENT STEP (CHEMICAL REFINEMENT) (57) Abstract: This method prepares a chemical that is for forming a water-repellant protective membrane, has solvent a and an agent for forming a water-repellant protective membrane, and is for forming a water-repellant protective membrane at least at the fS surface of the concave portions of the bumpy pattern of a wafer having the bumpy pattern at the surface. The method has: first a re - finement step that eliminates the elements (metal impurities) Na, Mg, K, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn, and Ag in the solvent by ^ means of distilling the solvent or by means of particle-eliminating membrane a and an ion exchange resin membrane; mixing a step 00 for mixing the solvent after the first refinement step and the agent for forming a water-repellant protective membrane; and a second © refinement step for eliminating particles in the chemical after the mixing step by means of particle-eliminating membrane. a O tit&tz/sbO), mmt, y HU ^ N a , Mg, K, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn $.L£A g n (&jswiai) £, ic^y^s-rs, XIA, ^ u, -r ;u£, 1 %2(Dmwk*.n^t&o WO 2013/080822 Al I lllll llllllll II llllll III lllll lllll lllll lllll III III III lllll llll llll lllll lllll lllllll llll llll T (AM, AZ, BY, KG, KZ, RU, TJ, TM), 3 — \ (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, o, & (x ,\ GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, ~~ 21 *(3)} NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
SG11201402456PA 2011-11-29 2012-11-19 Method for preparing liquid chemical for forming water-repellent protective film SG11201402456PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011261011 2011-11-29
JP2012237503A JP5288147B2 (en) 2011-11-29 2012-10-29 Method for preparing protective film forming chemical
PCT/JP2012/079902 WO2013080822A1 (en) 2011-11-29 2012-11-19 Method for preparing chemical for forming protective membrane

Publications (1)

Publication Number Publication Date
SG11201402456PA true SG11201402456PA (en) 2014-12-30

Family

ID=48535285

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402456PA SG11201402456PA (en) 2011-11-29 2012-11-19 Method for preparing liquid chemical for forming water-repellent protective film

Country Status (6)

Country Link
US (1) US20140311379A1 (en)
JP (1) JP5288147B2 (en)
KR (2) KR101773052B1 (en)
SG (1) SG11201402456PA (en)
TW (1) TWI465557B (en)
WO (1) WO2013080822A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6486161B2 (en) * 2015-03-24 2019-03-20 東京応化工業株式会社 Preparation method and surface treatment method of silylating agent chemical
JP6703256B2 (en) * 2016-03-15 2020-06-03 セントラル硝子株式会社 Water repellent protective film forming agent, water repellent protective film forming chemical, and wafer cleaning method
WO2017159446A1 (en) * 2016-03-15 2017-09-21 セントラル硝子株式会社 Liquid chemical for forming water-repellent protective film, and wafer washing method using said liquid chemical
JP2017174859A (en) * 2016-03-18 2017-09-28 セントラル硝子株式会社 Wafer cleaning method
KR20210138143A (en) 2016-03-31 2021-11-18 후지필름 가부시키가이샤 Treatment liquid for semiconductor production, container in which treatment liquid for semiconductor production is contained, pattern forming method and method for manufacturing electronic device
JP6866368B2 (en) 2016-06-13 2021-04-28 富士フイルム株式会社 Storage container containing the liquid composition and storage method of the liquid composition
JP6681796B2 (en) * 2016-06-21 2020-04-15 東京応化工業株式会社 Silylating agent solution, surface treatment method, and semiconductor device manufacturing method
KR102263278B1 (en) * 2016-09-27 2021-06-10 후지필름 가부시키가이샤 A chemical solution, a chemical solution container, a method for filling a chemical solution, and a storage method for a chemical solution
CN110462525B (en) 2017-03-24 2024-07-26 富士胶片电子材料美国有限公司 Surface treatment method and composition for use in the method
US11174394B2 (en) 2018-01-05 2021-11-16 Fujifilm Electronic Materials U.S.A., Inc. Surface treatment compositions and articles containing same
JP7251223B2 (en) * 2018-03-19 2023-04-04 株式会社リコー Coating liquid for oxide insulator film formation
US20200035494A1 (en) * 2018-07-30 2020-01-30 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
US11634670B2 (en) 2018-11-16 2023-04-25 Toagosei Co. Ltd. Cleaning agent for semiconductor component, and use thereof
JP7328564B2 (en) * 2018-11-22 2023-08-17 セントラル硝子株式会社 Bevel treatment agent composition and wafer manufacturing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003132944A (en) 2001-10-22 2003-05-09 Mitsubishi Chemicals Corp Nonaqueous system electrolytic solution for lithium secondary battery and lithium secondary battery using the same
JP2010080668A (en) * 2008-09-26 2010-04-08 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
WO2010047196A1 (en) * 2008-10-21 2010-04-29 東京応化工業株式会社 Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate
JP4743340B1 (en) 2009-10-28 2011-08-10 セントラル硝子株式会社 Chemical solution for protective film formation
JP5708191B2 (en) * 2010-05-19 2015-04-30 セントラル硝子株式会社 Chemical solution for protective film formation

Also Published As

Publication number Publication date
KR101920784B1 (en) 2018-11-21
KR20170065689A (en) 2017-06-13
JP2013138178A (en) 2013-07-11
US20140311379A1 (en) 2014-10-23
KR20140143737A (en) 2014-12-17
KR101773052B1 (en) 2017-08-30
WO2013080822A1 (en) 2013-06-06
TW201329220A (en) 2013-07-16
JP5288147B2 (en) 2013-09-11
TWI465557B (en) 2014-12-21

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