SG11201407650VA - Composition and process for stripping photoresist from a surface including titanium nitride - Google Patents
Composition and process for stripping photoresist from a surface including titanium nitrideInfo
- Publication number
- SG11201407650VA SG11201407650VA SG11201407650VA SG11201407650VA SG11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- danbury
- low
- compositions
- titanium nitride
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/364—Organic compounds containing phosphorus containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Steel Electrode Plates (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 21 November 2013 (21.11.2013) WIPOIPCT (10) International Publication Number WO 2013/173738 A1 (51) International Patent Classification: G03F 7/42 (2006.01) H01L 21/027 (2006.01) G03F 7/32 (2006.01) B08B 3/00 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/041629 17 May 2013 (17.05.2013) English (30) Priority Data: 61/648,951 18 May 2012 (18.05.2012) English US (71) Applicant: ADVANCED TECHNOLOGY MATERI ALS, INC. [US/US]; 7 Commerce Drive, Danbury, Con necticut 06810 (US). (72) Inventors: COOPER, Emanuel I.; 25 Atherstone Road, Scarsdale, New York 10583 (US). CONNER, Marc; 7 Commerce Drive, Danbury, Connecticut 06810 (US). OWENS, Michael; 7 Commerce Drive, Danbury, Con necticut 06810 (US). (74) Agent: FUIERER, Tristan; Moore & Van Allen, PLLC, P.O. Box 13706, Research Triangle Park, North Carolina 27709 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: COMPOSITION AND PROCESS FOR STRIPPING PHOTORESIST FROM A SURFACE INCLUDING TITANIUM NITRIDE 00 m i> m i> i-H cn I'D BE • G = H pattern features FIGURE 1 ® (57) Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic ^ devices have been developed. The low pH compositions include sulfuric acid and at least one phosphorus-containing acid. The low Q pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s) or the metal gate materials.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261648951P | 2012-05-18 | 2012-05-18 | |
| PCT/US2013/041629 WO2013173738A1 (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201407650VA true SG11201407650VA (en) | 2014-12-30 |
Family
ID=49584341
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201407650VA SG11201407650VA (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
| SG10201610541UA SG10201610541UA (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201610541UA SG10201610541UA (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9678430B2 (en) |
| EP (1) | EP2850495A4 (en) |
| JP (1) | JP2015517691A (en) |
| KR (1) | KR20150016574A (en) |
| CN (1) | CN104487900B (en) |
| SG (2) | SG11201407650VA (en) |
| TW (1) | TW201406932A (en) |
| WO (1) | WO2013173738A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201406932A (en) | 2012-05-18 | 2014-02-16 | Advanced Tech Materials | Composition and process for stripping photoresist from a surface including titanium nitride |
| WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
| KR102294726B1 (en) | 2013-03-04 | 2021-08-30 | 엔테그리스, 아이엔씨. | Compositions and methods for selectively etching titanium nitride |
| CN111394100A (en) | 2013-06-06 | 2020-07-10 | 恩特格里斯公司 | Compositions and methods for selectively etching titanium nitride |
| KR102338526B1 (en) | 2013-07-31 | 2021-12-14 | 엔테그리스, 아이엔씨. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
| EP3039098B1 (en) | 2013-08-30 | 2020-09-30 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| US9536731B2 (en) * | 2013-10-25 | 2017-01-03 | International Business Machines Corporation | Wet clean process for removing CxHyFz etch residue |
| TWI654340B (en) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME |
| US20160322232A1 (en) | 2013-12-20 | 2016-11-03 | Entegris, Inc. | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
| KR102290209B1 (en) | 2013-12-31 | 2021-08-20 | 엔테그리스, 아이엔씨. | Formulations to selectively etch silicon and germanium |
| EP3099839A4 (en) | 2014-01-29 | 2017-10-11 | Entegris, Inc. | Post chemical mechanical polishing formulations and method of use |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| CN105087009B (en) * | 2014-04-30 | 2017-06-30 | 东莞市钜升金属科技有限公司 | A kind of technique for ito film etching |
| US10032633B1 (en) * | 2017-01-17 | 2018-07-24 | International Business Machines Corporation | Image transfer using EUV lithographic structure and double patterning process |
| CN113479860B (en) * | 2021-07-01 | 2023-08-11 | 中国石油大学(华东) | SbPO (styrene-ethylene-propylene-diene monomer) 4 Preparation method of nitrogen-doped carbon composite material |
Family Cites Families (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4169068A (en) | 1976-08-20 | 1979-09-25 | Japan Synthetic Rubber Company Limited | Stripping liquor composition for removing photoresists comprising hydrogen peroxide |
| GB8701759D0 (en) | 1987-01-27 | 1987-03-04 | Laporte Industries Ltd | Processing of semi-conductor materials |
| US5166039A (en) * | 1988-02-25 | 1992-11-24 | Hoya Corporation | Peeling solution for photo- or electron beam-sensitive resin and process for peeling off said resin |
| US5037724A (en) * | 1988-02-25 | 1991-08-06 | Hoya Corporation | Peeling solution for photo- or electron beam-sensitive resin |
| GB8813889D0 (en) | 1988-06-11 | 1988-07-13 | Micro Image Technology Ltd | Solutions of permonosulphuric acid |
| US5320709A (en) | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
| US7534752B2 (en) | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| US6323168B1 (en) | 1996-07-03 | 2001-11-27 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| WO1998021415A1 (en) | 1996-11-12 | 1998-05-22 | H.B. Zachry Company | Precast, modular spar system |
| US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6280651B1 (en) | 1998-12-16 | 2001-08-28 | Advanced Technology Materials, Inc. | Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent |
| US6211126B1 (en) | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| CA2332390A1 (en) | 1998-05-18 | 1999-11-25 | Advanced Technology Materials, Inc. | Stripping compositions for semiconductor substrates |
| US6875733B1 (en) | 1998-10-14 | 2005-04-05 | Advanced Technology Materials, Inc. | Ammonium borate containing compositions for stripping residues from semiconductor substrates |
| US6344432B1 (en) | 1999-08-20 | 2002-02-05 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US6492308B1 (en) | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6723691B2 (en) | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6194366B1 (en) | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
| US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| US6566315B2 (en) | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US6627587B2 (en) | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| JP2003177556A (en) * | 2001-12-12 | 2003-06-27 | Sharp Corp | Photoresist stripper composition and removing method |
| US6773873B2 (en) | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
| US6849200B2 (en) | 2002-07-23 | 2005-02-01 | Advanced Technology Materials, Inc. | Composition and process for wet stripping removal of sacrificial anti-reflective material |
| US8236485B2 (en) | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
| TW200505975A (en) * | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
| TW200428512A (en) * | 2003-05-02 | 2004-12-16 | Ekc Technology Inc | Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing |
| US7736405B2 (en) | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| KR20060115896A (en) | 2003-12-02 | 2006-11-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Resist, barc and gap fill material stripping chemical and method |
| US20050145311A1 (en) | 2003-12-30 | 2005-07-07 | Walker Elizabeth L. | Method for monitoring surface treatment of copper containing devices |
| US7521406B2 (en) * | 2004-02-11 | 2009-04-21 | Mallinckrodt Baker, Inc | Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof |
| US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| US20060063687A1 (en) | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
| US20060148666A1 (en) | 2004-12-30 | 2006-07-06 | Advanced Technology Materials Inc. | Aqueous cleaner with low metal etch rate |
| US20060154186A1 (en) | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
| US7923423B2 (en) | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
| US7365045B2 (en) | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
| EP1875493A2 (en) * | 2005-04-04 | 2008-01-09 | MALLINCKRODT BAKER, Inc. | Composition for cleaning ion implanted photoresist in front end of line applications |
| WO2006110645A2 (en) | 2005-04-11 | 2006-10-19 | Advanced Technology Materials, Inc. | Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices |
| US20070251551A1 (en) | 2005-04-15 | 2007-11-01 | Korzenski Michael B | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
| KR20070120609A (en) | 2005-04-15 | 2007-12-24 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| CA2608285A1 (en) * | 2005-05-13 | 2006-11-23 | Sachem, Inc. | Selective wet etching of oxides |
| SG162757A1 (en) | 2005-06-07 | 2010-07-29 | Advanced Tech Materials | Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition |
| US20090212021A1 (en) | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| WO2007027522A2 (en) | 2005-08-29 | 2007-03-08 | Advanced Technology Materials, Inc. | Composition and method for removing thick film photoresist |
| SG10201508243UA (en) | 2005-10-05 | 2015-11-27 | Entegris Inc | Oxidizing aqueous cleaner for the removal of post-etch residues |
| EP1949424A2 (en) | 2005-10-05 | 2008-07-30 | Advanced Technology Materials, Inc. | Composition and method for selectively etching gate spacer oxide material |
| WO2007047365A2 (en) | 2005-10-13 | 2007-04-26 | Advanced Technology Materials, Inc. | Metals compatible photoresist and/or sacrificial antireflective coating removal composition |
| CN101356629B (en) | 2005-11-09 | 2012-06-06 | 高级技术材料公司 | Composition and method for recycling semiconductor wafers having low-K dielectric materials thereon |
| TW200734448A (en) | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
| US20080076688A1 (en) | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| KR20090076938A (en) | 2006-09-25 | 2009-07-13 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Compositions and methods for the removal of photoresist for a wafer rework application |
| US20080125342A1 (en) | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| CN101605869B (en) | 2006-12-21 | 2014-03-05 | 高级技术材料公司 | Compositions and methods for selective removal of silicon nitride |
| SG177915A1 (en) | 2006-12-21 | 2012-02-28 | Advanced Tech Materials | Liquid cleaner for the removal of post-etch residues |
| TWI516573B (en) | 2007-02-06 | 2016-01-11 | 安堤格里斯公司 | Composition and process for the selective removal of tisin |
| US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| CN102623328B (en) * | 2007-05-18 | 2014-11-26 | Fsi国际公司 | Process for treatment of substrates with water vapor or steam |
| WO2008157345A2 (en) | 2007-06-13 | 2008-12-24 | Advanced Technology Materials, Inc. | Wafer reclamation compositions and methods |
| WO2009032460A1 (en) | 2007-08-02 | 2009-03-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| US20110039747A1 (en) | 2007-08-20 | 2011-02-17 | Advanced Technology Materials, Inc. | Composition and method for removing ion-implanted photoresist |
| TW200940706A (en) * | 2007-10-29 | 2009-10-01 | Ekc Technology Inc | Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions |
| SG188848A1 (en) | 2008-03-07 | 2013-04-30 | Advanced Tech Materials | Non-selective oxide etch wet clean composition and method of use |
| US8026200B2 (en) | 2008-05-01 | 2011-09-27 | Advanced Technology Materials, Inc. | Low pH mixtures for the removal of high density implanted resist |
| TW201013338A (en) | 2008-08-04 | 2010-04-01 | Advanced Tech Materials | Environmentally friendly polymer stripping compositions |
| EP2342738A4 (en) | 2008-10-02 | 2013-04-17 | Advanced Tech Materials | Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates |
| US9074170B2 (en) | 2008-10-21 | 2015-07-07 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
| US20100105595A1 (en) * | 2008-10-29 | 2010-04-29 | Wai Mun Lee | Composition comprising chelating agents containing amidoxime compounds |
| EP2391700A4 (en) | 2009-01-28 | 2016-08-31 | Entegris Inc | Lithographic tool in situ clean formulations |
| WO2010086745A1 (en) | 2009-02-02 | 2010-08-05 | Atmi Taiwan Co., Ltd. | Method of etching lanthanum-containing oxide layers |
| WO2010091045A2 (en) | 2009-02-05 | 2010-08-12 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of polymers and other organic material from a surface |
| MX2011008789A (en) * | 2009-02-25 | 2011-09-29 | Avantor Performance Mat Inc | Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers. |
| US8754021B2 (en) | 2009-02-27 | 2014-06-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
| CN103119694A (en) * | 2009-12-11 | 2013-05-22 | 高级技术材料公司 | Removal of masking material |
| KR20130016200A (en) | 2010-01-29 | 2013-02-14 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Cleaning agent for semiconductor provided with metal wiring |
| JP5508130B2 (en) * | 2010-05-14 | 2014-05-28 | 富士フイルム株式会社 | Cleaning composition, semiconductor device manufacturing method and cleaning method |
| JP2013533631A (en) | 2010-07-16 | 2013-08-22 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Aqueous cleaning agent to remove residues after etching |
| JP2012036750A (en) | 2010-08-04 | 2012-02-23 | Panasonic Corp | Compressor |
| JP6101421B2 (en) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | Etching solution for copper or copper alloy |
| WO2012027667A2 (en) | 2010-08-27 | 2012-03-01 | Advanced Technology Materials, Inc. | Method for preventing the collapse of high aspect ratio structures during drying |
| TWI619800B (en) | 2010-10-06 | 2018-04-01 | 恩特葛瑞斯股份有限公司 | Composition and process for selectively etching metal nitrides |
| KR101891363B1 (en) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | Composition for and method of suppressing titanium nitride corrosion |
| WO2012097143A2 (en) | 2011-01-13 | 2012-07-19 | Advanced Technology Materials, Inc. | Formulations for the removal of particles generated by cerium- containing solutions |
| JP2012186470A (en) | 2011-02-18 | 2012-09-27 | Sanyo Chem Ind Ltd | Cleaner for copper wiring semiconductor |
| JP2012251026A (en) | 2011-05-31 | 2012-12-20 | Sanyo Chem Ind Ltd | Cleaning agent for semiconductor |
| TW201311869A (en) | 2011-06-16 | 2013-03-16 | Advanced Tech Materials | Compositions and methods for selectively etching silicon nitride |
| JP5933950B2 (en) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | Etching solution for copper or copper alloy |
| US8618036B2 (en) | 2011-11-14 | 2013-12-31 | International Business Machines Corporation | Aqueous cerium-containing solution having an extended bath lifetime for removing mask material |
| CN104145324B (en) | 2011-12-28 | 2017-12-22 | 恩特格里斯公司 | Composition and method for selective etch titanium nitride |
| SG10202102525WA (en) | 2012-03-12 | 2021-04-29 | Entegris Inc | Methods for the selective removal of ashed spin-on glass |
| WO2013138278A1 (en) | 2012-03-12 | 2013-09-19 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
| KR20140139565A (en) | 2012-03-18 | 2014-12-05 | 인티그리스, 인코포레이티드 | Post-cmp formulation having improved barrier layer compatibility and cleaning performance |
| WO2013170130A1 (en) | 2012-05-11 | 2013-11-14 | Advanced Technology Materials, Inc. | Formulations for wet etching nipt during silicide fabrication |
| TW201406932A (en) | 2012-05-18 | 2014-02-16 | Advanced Tech Materials | Composition and process for stripping photoresist from a surface including titanium nitride |
| WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
-
2013
- 2013-05-17 TW TW102117505A patent/TW201406932A/en unknown
- 2013-05-17 KR KR1020147035464A patent/KR20150016574A/en active IP Right Grant
- 2013-05-17 SG SG11201407650VA patent/SG11201407650VA/en unknown
- 2013-05-17 EP EP13791286.1A patent/EP2850495A4/en not_active Withdrawn
- 2013-05-17 JP JP2015512891A patent/JP2015517691A/en active Pending
- 2013-05-17 SG SG10201610541UA patent/SG10201610541UA/en unknown
- 2013-05-17 CN CN201380038401.XA patent/CN104487900B/en not_active Expired - Fee Related
- 2013-05-17 WO PCT/US2013/041629 patent/WO2013173738A1/en active Application Filing
- 2013-05-17 US US14/401,732 patent/US9678430B2/en not_active Expired - Fee Related
Also Published As
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|---|---|
| EP2850495A1 (en) | 2015-03-25 |
| CN104487900B (en) | 2019-07-23 |
| WO2013173738A1 (en) | 2013-11-21 |
| TW201406932A (en) | 2014-02-16 |
| US9678430B2 (en) | 2017-06-13 |
| CN104487900A (en) | 2015-04-01 |
| EP2850495A4 (en) | 2016-01-20 |
| US20150168843A1 (en) | 2015-06-18 |
| SG10201610541UA (en) | 2017-01-27 |
| JP2015517691A (en) | 2015-06-22 |
| KR20150016574A (en) | 2015-02-12 |
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