SG11201407657YA - Aqueous clean solution with low copper etch rate for organic residue removal improvement - Google Patents
Aqueous clean solution with low copper etch rate for organic residue removal improvementInfo
- Publication number
- SG11201407657YA SG11201407657YA SG11201407657YA SG11201407657YA SG11201407657YA SG 11201407657Y A SG11201407657Y A SG 11201407657YA SG 11201407657Y A SG11201407657Y A SG 11201407657YA SG 11201407657Y A SG11201407657Y A SG 11201407657YA SG 11201407657Y A SG11201407657Y A SG 11201407657YA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- residue
- cleaning
- publication
- etch rate
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052802 copper Inorganic materials 0.000 title abstract 2
- 239000010949 copper Substances 0.000 title abstract 2
- 238000004140 cleaning Methods 0.000 abstract 4
- 239000000356 contaminant Substances 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000004377 microelectronic Methods 0.000 abstract 2
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000003112 inhibitor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 21 November 2013 (21.11.2013) WIPOIPCT (10) International Publication Number WO 2013/173743 A3 (51) International Patent Classification: H01L 21/302 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/041634 17 May 2013 (17.05.2013) English English (30) Priority Data: 61/648,937 61/695,548 18 May 2012 (18.05.2012) US 31 August 2012 (31.08.2012) US (71) Applicant: ADVANCED TECHNOLOGY MATERI ALS, INC. [US/US]; 7 Commerce Drive, Danbury, CT 06810 (US). (72) Inventors: JENQ, Shrane, Ning; 4F., No. 20, Ln, 421, Zhonghe Rd., Taipei County, Yonghe City, Taiwan, 234 (CN). BOGGS, Karl, E.; 74 Carol Drive, Hopewell Junc tion, NY 12533 (US). LIU, Jun; 13 Locust Lane, Unit 48, Brookfield, CT 06804 (US). THOMAS, Nicole; 31 Violet- wood Circle, Marlborough, MA 01752 (US). (74) Agent: FUIERER, Tristan; Moore & Van Allen PLLC, P.O. Box 13706, Research Triangle Park, NC 27709 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) (88) Date of publication of the international search report: 20 February 2014 •t i> m i> i-H cn i-H o CJ o & (54) Title: AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IM PROVEMENT (57) Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contamin ants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly effica cious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being com patible with barrier layers.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261648937P | 2012-05-18 | 2012-05-18 | |
US201261695548P | 2012-08-31 | 2012-08-31 | |
PCT/US2013/041634 WO2013173743A2 (en) | 2012-05-18 | 2013-05-17 | Aqueous clean solution with low copper etch rate for organic residue removal improvement |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201407657YA true SG11201407657YA (en) | 2014-12-30 |
Family
ID=49584473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201407657YA SG11201407657YA (en) | 2012-05-18 | 2013-05-17 | Aqueous clean solution with low copper etch rate for organic residue removal improvement |
Country Status (8)
Country | Link |
---|---|
US (1) | US20150114429A1 (en) |
EP (1) | EP2850651A4 (en) |
JP (1) | JP2015524165A (en) |
KR (1) | KR20150013830A (en) |
CN (1) | CN104395989A (en) |
SG (1) | SG11201407657YA (en) |
TW (1) | TW201404877A (en) |
WO (1) | WO2013173743A2 (en) |
Families Citing this family (39)
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SG11201405737VA (en) * | 2012-03-18 | 2014-10-30 | Entegris Inc | Post-cmp formulation having improved barrier layer compatibility and cleaning performance |
WO2014052316A1 (en) | 2012-09-25 | 2014-04-03 | Advanced Technology Materials, Inc. | Cobalt precursors for low temperature ald or cvd of cobalt-based thin films |
WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
EP2964725B1 (en) | 2013-03-04 | 2021-06-23 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
KR102338550B1 (en) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | Compositions and methods for selectively etching titanium nitride |
EP3027709A4 (en) | 2013-07-31 | 2017-03-29 | Entegris, Inc. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
SG11201601158VA (en) | 2013-08-30 | 2016-03-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
TWI654340B (en) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME |
WO2015095726A1 (en) | 2013-12-20 | 2015-06-25 | Entegris, Inc. | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
WO2015103146A1 (en) | 2013-12-31 | 2015-07-09 | Advanced Technology Materials, Inc. | Formulations to selectively etch silicon and germanium |
WO2015116818A1 (en) * | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
TWI686499B (en) | 2014-02-04 | 2020-03-01 | 荷蘭商Asm Ip控股公司 | Selective deposition of metals, metal oxides, and dielectrics |
WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
JP2015203047A (en) * | 2014-04-11 | 2015-11-16 | 三菱化学株式会社 | Substrate cleaning liquid for semiconductor device and method for cleaning substrate for semiconductor device |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
CN104233358B (en) * | 2014-09-10 | 2016-12-07 | 句容金猴机械研究所有限公司 | A kind of plant equipment rust remover and preparation method thereof |
WO2016040077A1 (en) * | 2014-09-14 | 2016-03-17 | Entergris, Inc. | Cobalt deposition selectivity on copper and dielectrics |
KR102058426B1 (en) * | 2015-01-05 | 2019-12-24 | 엔테그리스, 아이엔씨. | Formulation and method of use after chemical mechanical polishing |
EP3245668B1 (en) * | 2015-01-13 | 2021-06-30 | CMC Materials, Inc. | Cleaning composition and method for cleaning semiconductor wafers after cmp |
US9490145B2 (en) * | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
KR102644385B1 (en) * | 2015-12-22 | 2024-03-08 | 주식회사 케이씨텍 | Slurry composition for poly silicon film polishing |
JP6618613B2 (en) * | 2016-04-28 | 2019-12-11 | 富士フイルム株式会社 | Treatment liquid and treatment liquid container |
WO2017208767A1 (en) * | 2016-06-03 | 2017-12-07 | 富士フイルム株式会社 | Treatment liquid, substrate cleaning method and method for removing resist |
US10332740B2 (en) * | 2016-12-14 | 2019-06-25 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer |
KR102355690B1 (en) * | 2017-04-11 | 2022-01-26 | 엔테그리스, 아이엔씨. | Formulations and methods of use after chemical mechanical polishing |
CN107419326B (en) * | 2017-04-12 | 2018-12-07 | 广州市双石金属制品有限公司 | A kind of vacuum ion plating electrochemistry removing plating formula of liquid |
CN107460532B (en) * | 2017-04-12 | 2018-12-07 | 广州市双石金属制品有限公司 | A kind of vacuum ion plating electrochemistry removing plating formula of liquid |
JP7330972B2 (en) * | 2017-12-08 | 2023-08-22 | ビーエーエスエフ ソシエタス・ヨーロピア | Cleaning composition for removing post-etch or post-ash residue from semiconductor substrates, and corresponding manufacturing method |
CN110713868A (en) * | 2018-07-13 | 2020-01-21 | 巴斯夫欧洲公司 | Post etch residue cleaning solution capable of removing titanium nitride |
EP3824059A4 (en) | 2018-07-20 | 2022-04-27 | Entegris, Inc. | Cleaning composition with corrosion inhibitor |
JP7220040B2 (en) | 2018-09-20 | 2023-02-09 | 関東化学株式会社 | cleaning liquid composition |
CN112996893A (en) * | 2018-11-08 | 2021-06-18 | 恩特格里斯公司 | POST chemical mechanical polishing (POST CMP) cleaning composition |
CN110499511B (en) * | 2019-09-03 | 2021-08-31 | 中国石油天然气股份有限公司 | Carbon steel corrosion inhibitor under supercritical carbon dioxide and preparation method thereof |
CN110592568A (en) * | 2019-09-16 | 2019-12-20 | 铜陵市华创新材料有限公司 | Environment-friendly anti-oxidation liquid for negative current collector and preparation and use methods thereof |
EP4136273A4 (en) * | 2020-04-14 | 2024-05-01 | Entegris, Inc. | Method and composition for etching molybdenum |
CN113921383B (en) | 2021-09-14 | 2022-06-03 | 浙江奥首材料科技有限公司 | Copper surface passivation composition, application thereof and photoresist stripping liquid containing copper surface passivation composition |
US20230399754A1 (en) * | 2022-06-08 | 2023-12-14 | Entegris, Inc. | Cleaning composition with molybdenum etching inhibitor |
CN115160933B (en) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US7393819B2 (en) * | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
SG129274A1 (en) * | 2003-02-19 | 2007-02-26 | Mitsubishi Gas Chemical Co | Cleaaning solution and cleaning process using the solution |
US20090301996A1 (en) * | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
KR101622862B1 (en) * | 2007-05-17 | 2016-05-19 | 엔테그리스, 아이엔씨. | New antioxidants for post-cmp cleaning formulations |
US7919446B1 (en) * | 2007-12-28 | 2011-04-05 | Intermolecular, Inc. | Post-CMP cleaning compositions and methods of using same |
US8357646B2 (en) * | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
CN102197124B (en) * | 2008-10-21 | 2013-12-18 | 高级技术材料公司 | Copper cleaning and protection formulations |
US8754021B2 (en) * | 2009-02-27 | 2014-06-17 | Advanced Technology Materials, Inc. | Non-amine post-CMP composition and method of use |
TWI583786B (en) * | 2010-01-29 | 2017-05-21 | 恩特葛瑞斯股份有限公司 | Cleaning agent for semiconductor provided with metal wiring |
US8673783B2 (en) * | 2010-07-02 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal conductor chemical mechanical polish |
SG11201405737VA (en) * | 2012-03-18 | 2014-10-30 | Entegris Inc | Post-cmp formulation having improved barrier layer compatibility and cleaning performance |
-
2013
- 2013-05-17 KR KR20147035461A patent/KR20150013830A/en not_active Application Discontinuation
- 2013-05-17 TW TW102117506A patent/TW201404877A/en unknown
- 2013-05-17 EP EP13791242.4A patent/EP2850651A4/en not_active Withdrawn
- 2013-05-17 CN CN201380032542.0A patent/CN104395989A/en active Pending
- 2013-05-17 SG SG11201407657YA patent/SG11201407657YA/en unknown
- 2013-05-17 WO PCT/US2013/041634 patent/WO2013173743A2/en active Application Filing
- 2013-05-17 JP JP2015512893A patent/JP2015524165A/en active Pending
- 2013-05-17 US US14/401,739 patent/US20150114429A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20150013830A (en) | 2015-02-05 |
WO2013173743A2 (en) | 2013-11-21 |
CN104395989A (en) | 2015-03-04 |
TW201404877A (en) | 2014-02-01 |
US20150114429A1 (en) | 2015-04-30 |
JP2015524165A (en) | 2015-08-20 |
EP2850651A4 (en) | 2016-03-09 |
EP2850651A2 (en) | 2015-03-25 |
WO2013173743A3 (en) | 2014-02-20 |
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SG11201407657YA (en) | Aqueous clean solution with low copper etch rate for organic residue removal improvement | |
SG11201407650VA (en) | Composition and process for stripping photoresist from a surface including titanium nitride | |
SG11201910027YA (en) | Bispecific antibody against ox40 and ctla-4 | |
SG11201805300QA (en) | Heterocyclic compounds as immunomodulators | |
SG11201810983PA (en) | Novel heterocyclic derivatives useful as shp2 inhibitors | |
SG11201408451WA (en) | Use of vacuum chucks to hold a wafer or wafer sub-stack | |
SG11201908616PA (en) | Cleaning compositions for removing residues on semiconductor substrates | |
SG11201407427WA (en) | Extreme pcr | |
SG11201408769QA (en) | Methods of reducing the risk of a cardiovascular event in a subject on statin therapy | |
SG11201408186TA (en) | Pyridinone and pyridazinone derivatives | |
SG11201900746RA (en) | Engineered antibodies and other fc-domain containing molecules with enhanced agonism and effector functions | |
SG11201407458XA (en) | TRIAZOLONE COMPOUNDS AS mPGES-1 INHIBITORS | |
SG11201408629QA (en) | Dimethyl-benzoic acid compounds | |
SG11201903153PA (en) | Metal recovery process | |
SG11201407988UA (en) | Process for improved opioid synthesis | |
SG11201407591PA (en) | Process of making hydroxylated cyclopentapyrimidine compounds and salts thereof | |
SG11201909376TA (en) | Crystalline forms of a jak inhibitor compound | |
SG11201806544XA (en) | Compounds and methods of treating rna-mediated diseases | |
SG11201407546QA (en) | Novel ring-substituted n-pyridinyl amides as kinase inhibitors | |
SG11201809942WA (en) | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface | |
SG11201407646XA (en) | Polishing composition for nickel-phosphorous-coated memory disks | |
SG11201804235YA (en) | Selective particles transfer from one device to another | |
SG11201907012VA (en) | Molecular switches | |
SG11201407319YA (en) | Compositions and methods for treatment of inflammatory bowel disease | |
SG11201903795WA (en) | Salts of indazole derivative and crystals thereof |