SG11201407646XA - Polishing composition for nickel-phosphorous-coated memory disks - Google Patents

Polishing composition for nickel-phosphorous-coated memory disks

Info

Publication number
SG11201407646XA
SG11201407646XA SG11201407646XA SG11201407646XA SG11201407646XA SG 11201407646X A SG11201407646X A SG 11201407646XA SG 11201407646X A SG11201407646X A SG 11201407646XA SG 11201407646X A SG11201407646X A SG 11201407646XA SG 11201407646X A SG11201407646X A SG 11201407646XA
Authority
SG
Singapore
Prior art keywords
international
substrate
polishing composition
phosphorous
aurora
Prior art date
Application number
SG11201407646XA
Inventor
Chinnathambi Selvaraj Palanisamy
Haresh Siriwardane
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG11201407646XA publication Critical patent/SG11201407646XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 28 November 2013 (28.11.2013) WIPOIPCT (10) International Publication Number WO 2013/177251 A1 (51) International Patent Classification: B24B 37/04 (2006.01) H01L 21/304 (2006.01) B24B 57/02 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/042168 22 May 2013 (22.05.2013) English (30) Priority Data: 13/478,292 23 May 2012 (23.05.2012) (71) Applicant: CABOT MICROELECTRONICS COR­ PORATION [US/US]; Legal Department, 870 North Commons Drive, Aurora, Illinois 60504 (US). (72) Inventors: PALANISAMY CHINNATHAMBI, Selva- raj; c/o Legal Department, Cabot Microelectronics Corpor­ ation, 870 North Commons Drive, Aurora, Illinois 60504 (US). SIRIWARDANE, Haresh; c/o Legal Department, Cabot Microelectronics Corporation, 870 North Commons Drive, Aurora, Illinois 60504 (US). (74) Agents: WESEMAN, Steven et al.; Cabot Microelectron­ ics Corporation, 870 North Commons Drive, Aurora, Illinois 60504 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. US English (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(H)) — as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: — with international search report (Art. 21(3)) CJ i> i> i-H cn i-H o CJ (54) Title: POLISHING COMPOSITION FOR NICKEL-PHOSPHOROUS-COATED MEMORY DISKS (57) Abstract: The invention provides chemical-mechanical polishing composition containing wet-process silica, an oxidizing a agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing substrate, especially nickel-phosphorous substrate, a a by contacting substrate with polishing a a pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
SG11201407646XA 2012-05-23 2013-05-22 Polishing composition for nickel-phosphorous-coated memory disks SG11201407646XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/478,292 US9039914B2 (en) 2012-05-23 2012-05-23 Polishing composition for nickel-phosphorous-coated memory disks
PCT/US2013/042168 WO2013177251A1 (en) 2012-05-23 2013-05-22 Polishing composition for nickel-phosphorous-coated memory disks

Publications (1)

Publication Number Publication Date
SG11201407646XA true SG11201407646XA (en) 2014-12-30

Family

ID=49620779

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407646XA SG11201407646XA (en) 2012-05-23 2013-05-22 Polishing composition for nickel-phosphorous-coated memory disks

Country Status (5)

Country Link
US (1) US9039914B2 (en)
MY (1) MY171797A (en)
SG (1) SG11201407646XA (en)
TW (1) TWI484009B (en)
WO (1) WO2013177251A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9909032B2 (en) * 2014-01-15 2018-03-06 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks
US9401104B2 (en) 2014-05-05 2016-07-26 Cabot Microelectronics Corporation Polishing composition for edge roll-off improvement
TWI563073B (en) * 2014-06-03 2016-12-21 Cabot Microelectronics Corp Cmp compositions and methods for polishing rigid disk surfaces
SG10201602672UA (en) * 2015-04-06 2016-11-29 Cabot Microelectronics Corp Cmp composition and method for polishing rigid disks
MY184933A (en) * 2015-09-25 2021-04-30 Yamaguchi Seiken Kogyo Co Ltd Polishing composition and method for polishing magnetic disk substrate
SG11201809942WA (en) * 2016-06-07 2018-12-28 Cabot Microelectronics Corp Chemical-mechanical processing slurry and methods for processing a nickel substrate surface
WO2018191485A1 (en) * 2017-04-14 2018-10-18 Cabot Microelectronics Corporation Chemical-mechanical processing slurry and methods for processing a nickel substrate surface
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching

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Also Published As

Publication number Publication date
TWI484009B (en) 2015-05-11
TW201402735A (en) 2014-01-16
US9039914B2 (en) 2015-05-26
WO2013177251A1 (en) 2013-11-28
MY171797A (en) 2019-10-30
US20130313226A1 (en) 2013-11-28

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