SG11201903865TA - Precursors and flowable cvd methods for making low-k films to fill surface features - Google Patents

Precursors and flowable cvd methods for making low-k films to fill surface features

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Publication number
SG11201903865TA
SG11201903865TA SG11201903865TA SG11201903865TA SG11201903865TA SG 11201903865T A SG11201903865T A SG 11201903865TA SG 11201903865T A SG11201903865T A SG 11201903865TA SG 11201903865T A SG11201903865T A SG 11201903865TA SG 11201903865T A SG11201903865T A SG 11201903865TA
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Singapore
Prior art keywords
international
silicon
pct
flowable
precursors
Prior art date
Application number
SG11201903865TA
Inventor
Manchao Xiao
daniel Spence
Richard Ho
Original Assignee
Versum Materials Us Llc
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Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG11201903865TA publication Critical patent/SG11201903865TA/en

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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property 111111111111011111111111111110110010011111111111100110111111011111111111110111111 Organization International Bureau (10) International Publication Number (43) International Publication Date .....0\"\" WO 2018/085093 Al 11 May 2018 (11.05.2018) WIPO I PCT (51) (21) (22) (25) Filing Language: (26) (30) (71) (72) International Patent Classification: Way, #311, Carlsbad, CA 92008 (US). HO, Richard; 5815 C23C 16/30 (2006.01) C23C 16/48 (2006.01) E. La Palma Avenue, #313, Anaheim, CA 92807 (US). C23C 16/40 (2006.01) H01L 21/02 (2006.01) (74) Agent: ROSSI, Joseph, D. et al.; Stradley Ronon Stevens C23C 16/50 (2006.01) & Young, LLP, 30 Valley Stream Parkway, Great Valley International Application Number: Corporate Center, Malvern, PA 19355 (US). PCT/US2017/058320 (81) Designated States (unless otherwise indicated, for every International Filing Date: kind of national protection available): AE, AG, AL, AM, 25 October 2017 (25.10.2017) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, English DZ, EC, EE, EG, ES, FL GB, GD, GE, GH, GM, GT, HN, Publication Language: English HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, Priority Data: KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, 62/415,756 01 November 2016 (01.11.2016) US 15/789,732 20 October 2017 (20.10.2017) US OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, Applicant: VERSUM MATERIALS US, LLC [US/US]; TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. 8555 S. River Parkway, Tempe, AZ 85284 (US). (84) Designated States (unless otherwise indicated, for every Inventors: XIAO, Manchao; 5534 Caballos Place, San kind of regional protection available): ARIPO (BW, GH, Diego, CA 92130 (US). SPENCE, Daniel, P.; 2334 Hosp GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, = Title: PRECURSORS : A method feature into a flowable CVD reactor; introducing into the reactor at least organoamine wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical (54) -- -- GC multifunctional ,-1 oligomer AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES comprising at least one compound and at least one to form a flowable liquid partially fills at least a portion properties. ' SP16561-091 #032 _ , • 4 2.0kV 3.8mm x100k SE(U) 1/19/2016 , - s sk, . --- . 500nm = = _ = = = _ = = FI G. 1 (Prior Art) for depositing a silicon-containing film, the method comprising: placing a substrate compound to at least partially react the at least one one silicon-containing silicon-containing compound 1-1 en en O 1 4n (57) GC c:::: , surface 0 of ei O [Continued on next page] WO 2018/085093 Al MIDEDIMOMOIDEIREIDIONIMHINIECIERVOIMIE UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
SG11201903865TA 2016-11-01 2017-10-25 Precursors and flowable cvd methods for making low-k films to fill surface features SG11201903865TA (en)

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